CN113329593B - Integrated low-temperature semiconductor chip system - Google Patents

Abstract

The invention provides an integrated low-temperature semiconductor chip system, which comprises a semiconductor chip and a throttling refrigeration chip for refrigerating the semiconductor chip; one side of the semiconductor chip is provided with a micro-channel; the evaporation section of the throttling refrigeration chip is provided with a working medium feeding groove and a working medium discharging groove which are communicated with the micro channel, and the working medium feeding groove and the working medium discharging groove are not directly communicated. According to the integrated low-temperature semiconductor chip system, the contact surface of the evaporation section of the throttling refrigeration chip and the semiconductor chip is changed into an open surface, a bonding interface is provided for the substrate of the semiconductor chip, flow channel coupling is realized between the evaporation section and the semiconductor chip, low-temperature working medium flowing to the evaporation section directly exchanges heat with the semiconductor chip, the semiconductor chip is further refrigerated, heat conduction thermal resistance and bonding contact thermal resistance of the side wall of the evaporation section are eliminated, cold loss is reduced, and integration of the semiconductor chip and the throttling refrigeration chip is realized.

Description

Integrated low temperature semiconductor chip system

technical field

The invention belongs to the technical field of low-temperature refrigeration, and in particular relates to an integrated low-temperature semiconductor chip system.

Background technique

The throttling refrigeration chip is a refrigeration chip with an integrated structure. Generally, it is equipped with a high-pressure inlet and a low-pressure outlet. The two ends of each are the above-mentioned high-pressure inlet and low-pressure outlet respectively; the working fluid channel between the throttle section inlet and the high-pressure inlet is a high-pressure working fluid channel, and the working fluid channel between the evaporating section outlet and the low-pressure outlet is The low-pressure working medium flow channel is provided with a heat exchange partition wall between the high-pressure working medium flow channel and the low-pressure working medium flow channel.

The high-pressure working medium flow channel and the low-pressure working medium flow channel in the throttling refrigeration chip can be one-dimensional horizontal straight flow channels; they can also be three-dimensional circuitous flow channels; the shape is generally a plate structure or a rectangular parallelepiped or a cube structure (for example, the applicant The structure reported in the prior patent document CN 108966601A).

The throttling refrigeration chip has the advantages of small size, fast response, and low noise. It is currently the only refrigeration technology that can realize chip-level structure of liquid nitrogen and lower temperature regions.

The working principle of the throttling refrigeration chip is shown in Figure 1: During stable operation, the compressor discharges high-pressure working medium (state point 1) at room temperature into the high-pressure flow channel of the partition heat exchanger, and the countercurrent flow from the low-pressure flow channel of the partition heat exchanger The working fluid cools to a lower temperature (state point 2); then flows through the throttle valve, the high-pressure working fluid is throttled down to a low-pressure state (state point 3), and the temperature drops, generally changing from gas phase to gas-liquid two-phase state; in the evaporator, the gas-liquid two-phase working medium absorbs heat from the cooled target, and the liquid-phase working medium is vaporized (state point 4);

After that, the working fluid flowing out of the evaporator flows through the low-pressure side channel of the partition heat exchanger, absorbs the heat of the incoming high-pressure working fluid and reaches room temperature (state point 5), and returns to the compressor to be compressed again (heat dissipation to the environment during the compression process) to High pressure (status point 1), forming a closed loop. Using nitrogen as the refrigerant, throttling the refrigeration chip can provide the cooling capacity of the liquid nitrogen temperature zone at the evaporator.

The throttling cooling chip needs to establish a temperature difference of more than 200K in the length direction, and the solid heat conduction loss in the length direction becomes the main leakage heat loss of the throttling cooling chip. Therefore, it is necessary to use structural materials with low thermal conductivity to prepare throttling refrigeration chips to increase their cooling capacity per unit volume, thereby achieving miniaturization. In addition, since the throttling cooling chip requires high air pressure (>8MPa) to obtain sufficient throttling cooling effect, the structural material is required to have strong mechanical properties at the same time. Glass (thermal conductivity about 1W/(m ^. K), Young's modulus about 70GPa) is the only experimentally verified material for throttling cooling chips. Semiconductor chips are mainly based on silicon and are usually integrated with throttling cooling chips by bonding.

The structure of the throttling cooling chip cooling the semiconductor chip is shown in Figure 2. There are multiple heat conduction resistances (glass, conductive silver glue and Silicon substrate) and the uncertain contact thermal resistance (the gap caused by the uneven application of the conductive silver glue and the shrinkage of the volume), the two will produce a large temperature difference during heat transfer, which will reduce the overall performance of the integrated system. At the same time, the reliability of bonding and the complexity of operation have also become obstacles to the mass production of integrated systems.

Contents of the invention

In order to solve the above-mentioned problems in the prior art, the present invention provides an integrated low-temperature semiconductor chip system with compact structure and reduced thermal resistance and cooling loss.

An integrated low-temperature semiconductor chip system, including a semiconductor chip and a throttling cooling chip for cooling the semiconductor chip; one side of the semiconductor chip is provided with a micro flow channel; the evaporation section of the throttling cooling chip is provided with The working medium feed tank and the working medium discharge tank connected by the micro-channel, and the working medium feed tank and the working medium discharge tank are not directly connected.

In the present invention, the throttling refrigeration chip and the semiconductor chip are designed, processed, and manufactured as a whole, and the integrated design and processing of the two are realized, which is conducive to exerting the potential of the integration of the throttling refrigeration chip, improving the cooling capacity utilization efficiency and the comprehensive performance of the integrated system, It is an important basis for the manufacture of low-temperature semiconductor chips with highly consistent performance.

The present invention embeds the semiconductor chip into the throttling refrigeration chip to form an integrated whole; the present invention uses the existing method to process a three-dimensional bent flow channel or a two-dimensional horizontal flow channel in the throttling refrigeration chip material (such as glass) to obtain a throttling refrigeration chip. At the same time, the end face of the evaporator of the throttling cooling chip is improved to be open, which provides a bonding interface for the substrate of the semiconductor chip, eliminates the heat conduction thermal resistance and bonding contact thermal resistance of the throttling cooling chip material, and realizes the semiconductor chip and the throttling cooling chip integration.

In the above technical solution, the contact surface between the evaporation section of the throttling refrigeration chip and the semiconductor chip is changed to be open, and a bonding interface is provided for the substrate of the semiconductor chip, so that the flow channel coupling between the evaporation section and the semiconductor chip is realized, so that the flow to the evaporation section The low-temperature working fluid directly exchanges heat with the semiconductor chip, and then refrigerates the semiconductor chip, which eliminates the thermal resistance of the side wall of the evaporation section and the thermal resistance of the bonding contact, reduces the loss of cooling capacity, and realizes the semiconductor chip and the throttling refrigeration chip. integration.

Preferably, a bonding interface is provided between the evaporation section and the semiconductor chip.

As a preference, one or more of the working medium feeding troughs and working medium discharging troughs are provided respectively; when multiple working medium feeding troughs and multiple working medium discharging troughs are provided, the multiple working medium feeding troughs and the multiple working medium discharging troughs are alternately interspersed.

By adopting the above technical solution, the uniformity of the temperature distribution of the semiconductor chip and the stability of the system performance can be improved.

Preferably, the direction of the microchannel is perpendicular to the length direction of the working medium feed tank and the working medium discharge tank. While ensuring the high heat transfer efficiency of the micro-channel, it reduces the flow resistance caused by it, and realizes the efficient cooling of the semiconductor chip by the low-temperature working fluid.

As a preference, both the working medium feeding trough and the working medium discharging trough have a groove structure in which the groove width gradually decreases along the length direction, and the end with a larger groove width of the working medium feeding trough is the working medium feeding end, The end with a larger groove width of the working medium discharge chute is the working medium discharge end. Adopting the technical solution of the present invention, it can adapt to the changing trend that the working fluid flux of the discharge tank continuously flows out to the micro flow channel of the semiconductor chip along the flow direction and gradually decreases, the channel setting is more compact, the flow resistance is further reduced, and the heat exchange is more sufficient ,higher efficiency.

As a further preference, the end of the working medium feeding tank with a larger groove width, that is, the working medium feeding end is provided with a feed opening penetrating through the side tank wall or the end tank wall is missing to directly form a feed opening. During actual operation, the working fluid enters the working medium feed tank from the feed port, then enters the microchannel of the semiconductor chip for cooling, and then is discharged through the working medium discharge tank.

Adopting the above-mentioned technical scheme can not only ensure the flow rate of the low-temperature working fluid, but also make the low-temperature working medium flow rapidly along the length direction of the working medium feeding tank, thereby cooling down the temperature of the entire semiconductor chip, further reducing the flow resistance, and improving the refrigeration efficiency; In addition, the end of the working medium discharge trough with a larger groove width is the working medium discharge end, and the end with the smaller groove width is the feeding end, which can adapt to the flow direction of the working medium flux in the working medium discharge trough The change trend is gradually increasing due to the continuous influx of the micro-channels of the semiconductor chip, the channel setting is more compact, the flow resistance is further reduced, the heat exchange is more sufficient, and the efficiency is higher, so that the low-temperature working fluid can flow through the working fluid discharge trough. The larger end can fully contact and cool the semiconductor chip before it flows out.

As a preference, the side wall of the throttling refrigeration chip is provided with a high-pressure inlet and a low-pressure outlet, and a one-way working fluid flow channel with a throttling section and an evaporation section is provided in the throttling cooling chip, and the one-way working fluid flow channel The two ends of are respectively the high-pressure inlet and the low-pressure outlet;

The working fluid channel between the throttle section inlet and the high-pressure inlet is a high-pressure working fluid channel, the working fluid channel between the evaporation section outlet and the low-pressure outlet is a low-pressure working fluid channel, and the high-pressure A heat exchange partition is arranged between the working medium flow channel and the low-pressure working medium flow channel.

In the above technical scheme, the non-direct communication between the working medium feed tank and the working medium discharge tank means that there is no conduction between the working medium feed tank and the working medium discharge tank wall; the outlet of the working medium feed tank It is only connected to the micro-channel, and the inlet is connected to the throttling section; the inlet of the working medium discharge tank is only connected to the micro-channel, and the outlet is connected to the low-pressure working medium channel. That is to say, after the working fluid enters the working medium feed tank, it will not directly enter the working medium discharge tank, but needs to enter the working medium discharge tank through the micro flow channel, that is, the working fluid feed tank and the working medium outlet. The troughs are indirectly connected through the micro flow channel.

The high-pressure working medium flow channel and the low-pressure working medium flow channel can adopt a circuitous arrangement with a higher integration degree and a more compact structure according to needs, or a horizontal direct flow channel structure with a simple structure and convenient processing.

As a further preference, the high-pressure working medium flow channel and the low-pressure working medium flow channel are set in a detour; the evaporation section is set on one side of the throttling refrigeration chip, and the high-pressure inlet and low-pressure outlet are set on the throttling refrigeration chip. the opposite side of the chip.

By adopting the above technical solution, the volume of the throttling refrigeration chip can be reduced under the premise of ensuring the refrigeration effect, so that the structure of the low-temperature semiconductor chip system is more compact.

As a further preference, a thermal insulation gap is provided between adjacent detour sections in the high-pressure working medium flow channel, or between adjacent detour sections in the low-pressure working medium flow channel, or between the throttling section and the high-pressure working medium flow channel . The heat insulation gap is used to avoid heat leakage between the high-pressure working medium flow channel or the detour section in the low-pressure working medium flow channel, and to avoid the loss of cooling capacity.

As a further preference, the throttling cooling chip is a cuboid or cube structure or an approximate cuboid or approximately cube or pyramid structure.

As a further preference, the high-pressure working fluid channel and the low-pressure working fluid channel are horizontal straight channels;

The chip is arranged at one end of the throttling refrigeration chip, and the high-pressure inlet and low-pressure outlet are arranged at the other end of the refrigeration module.

The throttling refrigeration chip adopting the above technical scheme has simple structure, convenient processing and high refrigeration efficiency.

As a further preference, the throttling refrigeration chip includes an upper plate, a middle plate and a lower plate; Bonding and sealing form the throttling section and the high-pressure working medium flow channel;

One end of the middle plate close to the throttling section is provided with a transverse channel arranged along its width direction and communicated with the throttling section; the area between the transverse channel and the low-pressure working fluid channel on the middle plate is The working medium feeding chute and working medium discharging chute are provided;

The working medium feed tank is in communication with the transverse channel, and the working medium discharge tank is in communication with the low-pressure working medium flow channel.

In the above technical scheme, the setting of the working fluid feeding tank, the micro-channel and the working medium discharging tank makes the evaporation section and the semiconductor chip form an integral body, and the working fluid passes through the working fluid feeding tank, the micro-channel and the working medium successively. The working medium discharge trough realizes the cooling of the semiconductor chip.

As a further preferred solution, the end of the lower plate away from the throttling section is provided with the high-pressure inlet and outlet I, and the high-pressure inlet is used as the inlet of the high-pressure working fluid channel; the middle plate is provided with the outlet I The upper and lower corresponding outlets II, the outlet I and the outlet II are connected to form the low-pressure outlet, and the low-pressure outlet serves as the outlet of the low-pressure working medium flow channel.

In the above technical solution, the high-pressure inlet, high-pressure working fluid flow channel, throttling section, working medium feed tank, micro-flow channel, working medium discharge tank, low-pressure working medium flow channel and low-pressure outlet are sequentially connected to form the unit To the working medium flow channel.

As a further preference, one end of the upper plate close to the semiconductor chip is provided with an avoidance groove corresponding to the working medium feeding groove and the working medium discharging groove. The working medium feed tank and the working medium discharge tank are respectively conducted through the corresponding avoidance tanks and the micro-channels of the semiconductor chip, so as to realize direct heat exchange.

The high-pressure gas source used by the throttling refrigeration chip of the present invention can be provided by a compressor and form a circulation loop with it, so that the working medium can be recycled; it can also be provided by a high-pressure gas cylinder.

In the present invention, after the micro-channel and groove structure corresponding to the throttling refrigeration chip and the semiconductor chip are processed, they can be fixed to each other by heat fusion to form an integrated structure.

Compared with prior art, the beneficial effect of the present invention is:

The integrated low-temperature semiconductor chip system of the present invention provides a bonding interface for the substrate of the semiconductor chip by changing the side wall of the evaporation section of the throttling refrigeration chip close to the semiconductor chip into an open structure, and realizes the connection between the semiconductor chip and the evaporation section. The flow channel coupling eliminates the thermal resistance of the side wall of the evaporation section and the thermal resistance of the bonding contact, reduces the loss of cooling capacity, and realizes the integration of the semiconductor chip and the throttling refrigeration chip. The low-temperature semiconductor chip system of the present invention has high refrigeration efficiency, compact structure, low cooling loss, low energy consumption and low operating cost.

Description of drawings

Figure 1 is a schematic diagram of the working principle of the throttling refrigeration chip;

Fig. 2 is a schematic diagram of the structure when the throttling refrigeration chip is cooling the semiconductor chip;

Fig. 3 is a schematic diagram of the explosion structure of Embodiment 1 of the present invention;

In Fig. 4: (a) is a schematic cross-sectional structure diagram of semiconductor chip refrigeration in the prior art; (b) is a schematic cross-sectional structural diagram of semiconductor chip refrigeration in Embodiment 2 of the present invention;

FIG. 5 is a schematic structural view of Embodiment 2 of the present invention;

Fig. 6 is a structural schematic diagram from another angle of Embodiment 2 of the present invention;

Fig. 7 is a schematic perspective view of Embodiment 2 of the present invention.

In the figure: 10—semiconductor chip, 11—microfluidic channel, 20—upper plate, 21—avoidance groove, 30—middle plate, 31—exit II, 32—transverse channel, 33—working medium feed groove, 34— Working medium discharge trough, 40—lower plate, 41—exit I, 42—high pressure inlet, 43—throttling section, 50—throttling refrigeration chip, 51—working medium discharge trough, 52—working medium feeding trough, 53—insulation gap, 54—low pressure outlet, 55—high pressure inlet.

Detailed ways

The technical solutions of the present invention will be further described below in conjunction with the following examples.

Example 1

As shown in FIG. 3 , the integrated low-temperature semiconductor chip system includes a semiconductor chip 10 and a throttling refrigeration chip for cooling the semiconductor chip 10 ; one side of the semiconductor chip 10 is provided with a microchannel 11 .

The micro-channel 11 is composed of a plurality of parallel flow channels with a width of micron scale, and the width is generally 10-100 microns, which can be adjusted as required.

The throttling refrigeration chip includes an upper plate 20, a middle plate 30, and a lower plate 40; the upper plate 20 and the middle plate 30 are bonded and sealed to form an evaporation section and a low-pressure working medium flow channel, and the middle plate 30 and the lower plate 40 are bonded and sealed to form a throttle section and the high-pressure working medium flow channel; the middle plate 30 between the low-pressure working medium flow channel and the high-pressure working medium flow channel is used as a heat exchange partition wall.

In FIG. 3 , the throttling section and the evaporating section are arranged on the left side of the lower plate 40 and the middle plate 30 respectively. One end of the middle plate 30 close to the throttling section is provided with a transverse channel 32 arranged along its width direction and communicated with the throttling section; the area between the transverse channel 32 and the low-pressure working fluid channel on the middle plate 30 is provided with A plurality of working medium feeding tanks 33 and a plurality of working medium discharging tanks 34 are alternately interspersed, and the working medium feeding tanks 33 and the working medium discharging tanks 34 are not directly connected.

Both the working medium feeding trough 33 and the working medium discharging chute 34 are groove structures whose groove width gradually decreases along the length direction, and the end with a larger groove width of the working medium feeding trough 33 is the working medium feeding end and the transverse channel 32 conduction, the end of the working medium discharge groove 34 with a larger groove width is the working medium discharge end and the low-pressure working medium flow channel conduction. The lack of a tank wall corresponding to the feed end of the working medium feed tank 33 forms a working medium feed port; the working medium discharge end of the working medium discharge tank 34 corresponds to the lack of a tank wall to form a working medium discharge port. The maximum groove width of the working medium feed tank 33 and the working medium discharge tank 34 is generally about 100-1000 microns, which can be set according to needs, and should be much larger than the width of a single microchannel.

The direction of the micro-channel 11 is perpendicular to the length direction of the working medium feed tank 33 and the working medium discharge tank 34, and the working medium feed tank 33 and the working medium discharge tank 34 are connected to the micro-channel 11 respectively.

Working medium feed tank 33 and working medium discharge tank 34 are not directly connected between working medium feed tank 33 and working medium discharge tank 34 tank walls; working medium feed tank 33 outlet is only connected to micro The flow channel 11 is butted and connected, and the inlet is connected with the transverse channel 32; the inlet of the working medium discharge tank 34 is only connected with the micro flow channel 11, and the outlet is connected with the low-pressure working medium flow channel; when working, the working medium can only It enters from the working medium feed tank 33 , passes through the micro-channel, and then is discharged through the working medium discharge tank 34 .

The end of the lower plate 40 away from the throttling section is provided with a high-pressure inlet 42 and an outlet I41, and the high-pressure inlet 42 is used as the inlet of the high-pressure working medium flow channel; the middle plate 30 is provided with an outlet II31 corresponding to the upper and lower sides of the outlet I41, and the outlet I41 and the outlet II31 The conduction forms a low-pressure outlet, and the low-pressure outlet serves as the outlet of the low-pressure working medium flow channel.

The above-mentioned high-pressure inlet 42, high-pressure working medium flow channel, throttling section, working medium feed tank 33, micro-channel 11, working medium discharge tank 34, low-pressure working medium flow channel and low-pressure outlet are sequentially connected to form a one-way channel for working fluid. runner.

One end of the upper plate 20 close to the semiconductor chip 10 is provided with an avoidance groove 21 corresponding to the working fluid feeding groove 33 and the working fluid discharging groove 34 . The working medium feed tank 33 and the working medium discharge tank 34 are respectively connected to the micro flow channel 11 of the semiconductor chip 10 through the corresponding avoidance tank 21 to realize direct heat exchange.

Example 2

As shown in FIGS. 5-7 , the integrated low-temperature semiconductor chip system includes a semiconductor chip 10 and a throttling refrigeration chip 50 for cooling the semiconductor chip 10 ; one side of the semiconductor chip 10 is provided with a microchannel 11 .

The throttling refrigeration chip 50 is a cuboid structure, and its side wall is provided with a high-pressure inlet 55 and a low-pressure outlet 54. The throttling refrigeration chip 50 is provided with a unidirectional working fluid channel with a throttling section and an evaporation section. The two ends of the flow channel are high-pressure inlet 55 and low-pressure outlet 54 respectively;

The working fluid flow channel between the throttle section inlet and the high pressure inlet 55 is a high pressure working medium flow channel, the working medium flow channel between the evaporation section outlet and the low pressure outlet 54 is a low pressure working medium flow channel, the high pressure working medium flow channel and the low pressure working medium flow channel A heat exchange partition is arranged between the working medium flow channels.

The evaporating section of the throttling refrigeration chip 50 is respectively provided with a plurality of working medium feed tanks 52 and a plurality of working medium discharge tanks 51 that are connected to the micro-channel 11, and the working medium feed tanks 52 and the working medium discharge tanks There is no conduction between the walls of the 51 tanks; the outlet of the working fluid feed tank 52 is only connected to the micro-channel 11, and the inlet is connected to the throttling section; the inlet of the working medium discharge tank 51 is only connected to the micro-channel 11 , the outlet is connected to the low-pressure working fluid channel.

The lack of a tank wall corresponding to the feed end of the working medium feed tank 52 forms a working medium feed port; the working medium discharge end of the working medium discharge tank 51 corresponds to the lack of a tank wall to form a working medium discharge port. The maximum groove width of the working medium feed tank 52 and the working medium discharge tank 51 is generally about 100-1000 microns, which can be set according to needs, and it needs to be much larger than the width of a single microchannel.

A plurality of working medium feeding grooves 52 and a plurality of working medium discharging grooves 51 are interspersed alternately, and the microchannel 11 is arranged vertically to the length direction of the working medium feeding grooves 52 and the working medium discharging grooves 51 .

Both the working medium feeding trough 52 and the working medium discharging trough 51 have a groove structure whose groove width gradually decreases along the length direction, and the end of the working medium feeding trough 52 with a larger groove width is the working medium feeding end and the throttle section guide. The working medium discharge trough 51 has a larger groove width, which is the working medium discharge end and the low-pressure working medium flow channel.

In order to avoid loss of cooling capacity, a thermal insulation gap 53 is provided between adjacent detour sections in the high-pressure working medium flow channel, or between adjacent detour sections in the low-pressure working medium flow channel, or between the throttling section and the high-pressure working medium flow channel.

As shown in Figure 4, among the figure (a) is the cooling structure schematic diagram of semiconductor chip (semiconductor optoelectronic chip among the figure) in the prior art; (b) is the semiconductor chip of the present embodiment (semiconductor optoelectronic chip among the figure) Schematic diagram of refrigeration structure. Comparing Figures (a) and (b), it can be seen that the low-temperature semiconductor chip system of this embodiment realizes the flow channel coupling between the evaporating section of the throttling cooling chip and the semiconductor chip, eliminates the heat conduction thermal resistance of the side wall of the evaporating section and the bonding contact thermal resistance, and reduces The cooling loss is reduced, and the integration of the semiconductor chip and the throttling refrigeration chip is realized.

Claims (7)

1. The integrated low-temperature semiconductor chip system is characterized by comprising a semiconductor chip and a throttling refrigeration chip for refrigerating the semiconductor chip; one side of the semiconductor chip is provided with a micro-channel; the evaporation section of the throttling refrigeration chip is provided with a working medium feeding groove and a working medium discharging groove which are communicated with the micro channel, and the working medium feeding groove and the working medium discharging groove are not directly communicated;

a bonding interface is arranged between the evaporation section and the semiconductor chip;

the side wall of the throttling refrigeration chip is provided with a high-pressure inlet and a low-pressure outlet, a unidirectional working medium flow passage with a throttling section and an evaporation section is arranged in the throttling refrigeration chip, and the two ends of the unidirectional working medium flow passage are respectively provided with the high-pressure inlet and the low-pressure outlet;

a working medium flow passage between the throttling section inlet and the high pressure inlet is a high pressure working medium flow passage, a working medium flow passage between the evaporation section outlet and the low pressure outlet is a low pressure working medium flow passage, and a heat exchange dividing wall is arranged between the high pressure working medium flow passage and the low pressure working medium flow passage;

the working medium feeding groove and the working medium discharging groove are both groove structures with groove widths gradually reduced along the length direction, the end with the larger groove width of the working medium feeding groove is a working medium feeding end, and the end with the larger groove width of the working medium discharging groove is a working medium discharging end.

2. The integrally integrated cryogenic semiconductor chip system of claim 1, wherein the working medium feed chute and the working medium discharge chute are provided one or more than one; when a plurality of working medium discharge chutes are arranged, the working medium feed chutes and the working medium discharge chutes are alternately arranged in an alternating manner.

3. The integrally integrated cryogenic semiconductor chip system of claim 1, wherein the microchannel direction is perpendicular to the length direction of the working medium feed chute and the working medium discharge chute.

4. The integrally integrated cryogenic semiconductor chip system of claim 1, wherein the high pressure working medium channel and the low pressure working medium channel are arranged in a winding manner; the evaporation section is arranged on one side of the throttling refrigeration chip, and the high-pressure inlet and the low-pressure outlet are arranged on the opposite side of the throttling refrigeration chip;

the throttling refrigeration chip is of a cuboid or cube structure or an approximate cuboid or approximate cube or pyramid structure.

5. The integrally integrated cryogenic semiconductor chip system of claim 1, wherein the high pressure working fluid channel and the low pressure working fluid channel are horizontal straight channels;

the evaporation section is arranged at one end of the throttling refrigeration chip, and the high-pressure inlet and the low-pressure outlet are arranged at the other end of the throttling refrigeration chip.

6. The integrally integrated cryogenic semiconductor chip system of claim 5, wherein the throttling refrigeration chip comprises an upper plate, a middle plate, and a lower plate; the upper plate and the middle plate are bonded and sealed to form the evaporation section and the low-pressure working medium flow passage, and the middle plate and the lower plate are bonded and sealed to form the throttling section and the high-pressure working medium flow passage;

one end of the middle plate close to the throttling section is provided with a transverse through groove which is arranged along the width direction of the middle plate and is communicated with the throttling section; the working medium feeding groove and the working medium discharging groove are formed in the area, located between the transverse through groove and the low-pressure working medium flow passage, of the middle plate;

the working medium feeding groove is communicated with the transverse through groove, and the working medium discharging groove is communicated with the low-pressure working medium flow passage.

7. The integrally integrated cryogenic semiconductor chip system of claim 6, wherein an avoidance slot corresponding to the working medium feed chute and the working medium discharge chute is provided at one end of the upper plate close to the semiconductor chip.

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