CN113292036B

CN113292036B - Rotary structure and preparation method thereof

Info

Publication number: CN113292036B
Application number: CN202110567192.4A
Authority: CN
Inventors: 焦继伟; 刘京; 费跃; 陈思奇
Original assignee: Shanghai Core Technology Co ltd
Current assignee: Shanghai Core Technology Co ltd
Priority date: 2021-05-24
Filing date: 2021-05-24
Publication date: 2024-09-20
Anticipated expiration: 2041-05-24
Also published as: CN113292036A

Abstract

The embodiment of the invention discloses a rotating structure and a preparation method thereof, wherein the rotating structure comprises an N-level rotating unit, and the N-level rotating unit is positioned at one side of the n+1-level rotating unit close to the center of the rotating structure; n is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, wherein N is an integer; the rotating unit comprises a slope unit, a rotatable unit and an electrode unit, wherein the first electrode is electrically connected with the slope unit, the second electrode is electrically connected with the rotatable unit, and the rotatable unit rotates according to the electrostatic force between the first electrode and the second electrode; compared with the nth rotating unit, the included angle between the slope unit in the (n+1) th rotating unit and the preset plane is smaller; compared with the nth rotating unit, the average distance between the slope unit and the rotatable unit in the n+1th rotating unit is closer along the direction vertical to the preset plane, so that the electrostatic driving force is increased, and the technical problem of larger driving voltage in the driving process of the rotating structure in the prior art is solved.

Description

Rotary structure and preparation method thereof

Technical Field

The embodiment of the invention relates to the technical field of micro-electro-mechanical systems, in particular to a preparation method of a rotating structure.

Background

In the field of MEMS, the rotating structure can be applied to wavefront correction, spatial light modulation, optical element alignment, micromanipulators, optical switches, optical attenuators, optical multiplexers, and the like

According to the different driving modes of the rotating structure, the method is mainly divided into: electromagnetic drive, electrothermal drive, piezoelectric drive, electrostatic drive, and the like. The electromagnetic driving uses magnetic field force generated by an electromagnet or a permanent magnet as driving force, and the driving method has large driving current and large energy consumption, and the manufacturing of a magnetic film and the application of an external magnetic field are very difficult. The electrothermal driving utilizes driving current to make the material expand due to heating to generate driving force, so that the response speed is low, the power consumption is high, the influence of the ambient temperature is high, and the precision is low. The MEMS piezoelectric manufacturing process is still immature, the manufacturing difficulty is high, and the performance is unstable, so that the MEMS piezoelectric driving device cannot be applied to the market. Electrostatic actuation is one of the most studied at present, and typically involves the introduction of one or more pairs of electrodes in the structure, with motion being actuated by electrostatic forces between the electrodes.

The rotating structure driven by static electricity mainly uses two modes of comb tooth driving and flat plate driving, and the two-dimensional rotation can be realized by driving the comb teeth in different directions by the comb tooth driving. However, since the comb teeth and the gaps thereof are generally in the micron level, the structure may be blocked once dust particles fall into the comb teeth and the gaps thereof, and the device cannot work normally, the influence of the tiny particles on the packaging environment and the packaging needs to be paid special attention. In the parallel plate driving structure, since the electrostatic force is inversely proportional to the square of the distance, and the structure is damaged in order to prevent the upper and lower electrodes from generating the pull-in effect, a large electrode distance is required between the upper and lower electrode plates, and a large driving voltage is required.

Disclosure of Invention

In view of the above, the embodiment of the invention provides a method for manufacturing a rotating structure, so as to solve the technical problem of larger driving voltage in the driving process of the rotating structure in the prior art.

In a first aspect, an embodiment of the present invention provides a rotating structure, where the rotating structure includes N-stage rotating units, where the N-stage rotating unit is located at a side of the n+1-stage rotating unit near a center of the rotating structure; wherein N is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, and N is an integer;

the rotating unit comprises a slope unit and a rotatable unit positioned at one side of the slope unit;

The rotating structure further comprises an electrode unit, the electrode unit comprises a first electrode and a second electrode, the first electrode is electrically connected with the slope unit, the second electrode is electrically connected with the rotatable unit, and the rotatable unit is used for rotating according to electrostatic force between the first electrode and the second electrode;

The included angle between the slope unit in the nth-stage rotating unit and the preset plane is larger than the included angle between the slope unit in the n+1th-stage rotating unit and the preset plane; and an average distance between the ramp unit and the rotatable unit in the n-th stage rotation unit is greater than an average distance between the ramp unit and the rotatable unit in the n+1th stage rotation unit in a direction perpendicular to the preset plane.

Optionally, the rotatable units in any two stages of the rotating units have the same height.

Optionally, the first electrode includes N sub-electrodes;

the N sub-electrodes are in one-to-one correspondence with the N slope units;

the second electrode is electrically connected with the Nth rotatable unit, and any two adjacent rotatable units are electrically connected.

Optionally, the rotating unit includes a first section and a second section;

the first subsection and the second subsection in the m-th stage rotating unit are symmetrically arranged relative to the first stage rotating unit; wherein, m is more than 1 and less than N, and m is an integer.

In a second aspect, an embodiment of the present invention provides a method for preparing a rotating structure, for preparing the rotating structure, where the method includes:

providing a substrate and preparing an N-level slope unit in the substrate;

Preparing N-level rotatable units and electrode units on one side of the N-level slope unit, wherein the rotatable units are in one-to-one correspondence with the slope units to obtain N-level rotating units, and the N-level rotating units are positioned on one side of the n+1-level rotating units close to the center of the rotating structure; wherein N is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, and N is an integer; the electrode unit comprises a first electrode and a second electrode, the first electrode is electrically connected with the slope unit, the second electrode is electrically connected with the rotatable unit, and the rotatable unit is used for rotating according to electrostatic force between the first electrode and the second electrode;

The included angle between the slope unit in the nth-level rotating unit and a preset plane is larger than the included angle between the slope unit in the n+1th-level rotating unit and the preset plane; and an average distance between the ramp unit and the rotatable unit in the n-th stage rotation unit is greater than an average distance between the ramp unit and the rotatable unit in the n+1th stage rotation unit in a direction perpendicular to the preset plane.

Optionally, preparing an N-level ramp unit in the substrate, including:

And preparing an N-level slope unit in the substrate by adopting a mobile photoetching technology or a gray scale photoetching technology.

Optionally, using a mobile lithography technique, preparing an N-level ramp unit in the substrate, including:

providing a mask plate, wherein the mask plate comprises a first exposure opening and a second exposure opening;

Preparing a first oxide layer on one side of the substrate and patterning the first oxide layer, wherein the first oxide layer exposes a preparation area of the N-level slope unit;

Preparing photoresist on one side of the first oxide layer far away from the substrate and the exposed area of the first oxide layer;

Performing mask exposure on the substrate through the mask plate and simultaneously moving the substrate to form an N-level slope unit on the substrate; wherein the movement speed of the substrate when the n-th level slope unit is prepared is smaller than that when the n+1-th level slope unit is prepared.

Optionally, before preparing the first oxide layer on one side of the substrate and patterning the first oxide layer, the method further includes:

Preparing an oxidation protection layer on one side of the substrate and patterning the oxidation protection layer, wherein the oxidation protection layer covers a preparation area of the N-level slope unit;

carrying out thermal oxidation treatment on the exposed area of the oxidation protection layer, wherein the exposed area of the oxidation protection layer forms an oxidation structure;

And removing the oxidation protection layer and the oxidation structure so that the surface of the preparation area of the N-level slope unit is higher than the surface of the non-preparation area of the N-level slope unit.

Optionally, the preparation method further comprises:

The distance between the N-stage ramp unit and the rotatable unit is adjusted.

Optionally, the mask plate further includes an isolation mask structure located between the first exposure port and the second exposure port;

adjusting a distance between the N-stage ramp unit and the rotatable unit, comprising:

And adjusting the distance between the N-level slope unit and the rotatable unit by adjusting at least one of the thickness of the first oxide layer, the thickness of the oxide structure and the width of the isolation mask structure.

Optionally, the heights of the rotatable units in any two stages of the rotating units are the same;

the slope unit further comprises a first oxide layer positioned on one side of the substrate;

preparing an N-stage rotatable unit and an electrode structure on one side of the N-stage ramp unit, comprising:

providing a first semiconductor layer and bonding the first semiconductor layer and the first oxide layer;

patterning the first semiconductor layer to obtain the N-level rotatable units and a first electrode preparation window, wherein the first electrode preparation window exposes the first oxide layer, and N slope units are sequentially connected;

etching the first oxide layer through the first electrode preparation window to expose the substrate;

Preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, wherein the first electrode is electrically connected with the Nth grade slope unit; and preparing a second electrode and a second electrode wiring terminal on the surface of one side of the first semiconductor layer far away from the substrate, wherein the second electrode wiring terminal is electrically connected with the second electrode.

The first electrode comprises N sub-electrodes, and the N sub-electrodes are in one-to-one correspondence with the N slope units; the second electrode is electrically connected with the Nth rotatable unit, and any two adjacent rotatable units are electrically connected;

preparing an N-stage rotatable unit and an electrode unit at one side of the N-stage ramp unit, comprising:

preparing a second oxide layer on the surface of the substrate and the N-level slope;

Preparing a first electrode, a first electrode wiring terminal and a first bonding terminal on one side of the second oxide layer far away from the substrate; the first electrode comprises N sub-electrodes, and N slope units are sequentially connected;

providing a second semiconductor layer and preparing a second bonding terminal on one side surface of the second semiconductor layer;

bonding the first bonding terminal and the second bonding terminal;

thinning and patterning the second semiconductor layer to obtain the rotatable unit and expose the first electrode connection terminal;

And preparing a second electrode and a second electrode connecting terminal on one side of the second semiconductor layer away from the substrate.

According to the rotating structure provided by the embodiment of the invention, a multi-cascade control method is adopted, and N-level rotating units are arranged, wherein N is more than or equal to 2, N is an integer, and the smaller the included angle between the slope unit and a preset plane is, the smaller the average distance between the slope unit and the rotatable unit in the rotating unit is. When the rotation angle of the rotation structure is larger, the rotation structure is driven to rotate mainly due to the multistage slope units, the minimum slope of the angle and the minimum interval between the rotation structure are provided, and the torsion force is maximum; after that, the angle between the slope unit with the angle smaller than the second time and the rotatable unit is smaller, the distance is smaller, the torsion force is larger, and the slope unit with the angle smaller than the second time is replaced by a main driving structure to rotate, so that the large-angle rotation is finally realized; and the driving voltage can be reduced better by controlling the gap between the slope unit and the rotatable unit, so that the required driving voltage is much smaller than that of the rotating structure of a single slope, and the technical problem of larger driving voltage in the driving process of the rotating structure in the prior art is solved.

Drawings

Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:

FIG. 1 is a schematic view of a rotary structure according to an embodiment of the present invention;

Fig. 2 is a schematic structural diagram of a ramp unit with a rotating structure according to an embodiment of the present invention;

FIG. 3 is a cross-sectional view of a rotary structure according to an embodiment of the present invention;

FIG. 4 is a cross-sectional view of another rotary structure provided by an embodiment of the present invention;

FIG. 5 is a schematic view of another rotary structure according to an embodiment of the present invention;

FIG. 6 is a schematic flow chart of a method for manufacturing a rotary structure according to an embodiment of the present invention;

FIG. 7 is a schematic flow chart of another method for manufacturing a rotary structure according to an embodiment of the present invention;

Fig. 8 to 16 are schematic views of a preparation process of each step in a preparation method of a rotary structure according to an embodiment of the present invention;

FIG. 17 is a schematic flow chart of another method for manufacturing a rotary structure according to an embodiment of the present invention;

Fig. 18 to 21 are schematic views of a preparation process of each step in a preparation method of another rotary structure according to an embodiment of the present invention;

FIG. 22 is a schematic flow chart of another method for manufacturing a rotary structure according to an embodiment of the present invention;

fig. 23 to 27 are schematic views of a preparation process of each step in a preparation method of another rotary structure according to an embodiment of the present invention;

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be fully described below by way of specific embodiments with reference to the accompanying drawings in the examples of the present invention. It is apparent that the described embodiments are some, but not all, embodiments of the present invention, and that all other embodiments, which a person of ordinary skill in the art would obtain without making inventive efforts, are within the scope of this invention.

Fig. 1 is a schematic structural view of a rotating structure provided by an embodiment of the present invention, and fig. 2 is a schematic structural view of a ramp unit of a rotating structure provided by an embodiment of the present invention, and, as shown in fig. 1 and fig. 2, the rotating structure provided by the embodiment of the present invention includes N-stage rotating units, where the N-th stage rotating unit is located at a side of the n+1th stage rotating unit near the center of the rotating structure; wherein N is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, and N is an integer; the rotating unit comprises a slope unit and a rotatable unit positioned at one side of the slope unit; the rotating structure further comprises an electrode unit, the electrode unit comprises a first electrode and a second electrode, the first electrode is electrically connected with the slope unit, the second electrode is electrically connected with the rotatable unit, and the rotatable unit is used for rotating according to electrostatic force between the first electrode and the second electrode; the included angle between the slope unit in the nth-level rotating unit and the preset plane is larger than the included angle between the slope unit in the n+1th-level rotating unit and the preset plane; and an average distance between the ramp unit and the rotatable unit in the nth stage of rotation units is greater than an average distance between the ramp unit and the rotatable unit in the n+1th stage of rotation units in a direction perpendicular to the preset plane.

For example, fig. 1 and fig. 2 are both illustrated with N being 2, where N may also be an integer greater than 2, and embodiments of the present invention are illustrated with N being 2 only. As shown in fig. 1 and 2, the ramp unit includes a first-stage ramp unit 11 and a second-stage ramp unit 21, and correspondingly, the rotatable unit includes a first-stage rotatable structure 12 and a second-stage rotatable unit 22, the first-stage rotatable unit 12 and the first-stage ramp unit 11 constitute a first-stage rotatable unit 1, and the second-stage rotatable unit 22 and the second-stage ramp unit 21 constitute a second-stage rotatable unit 2; the first-stage rotating unit is located in the central area of the rotating structure, and the second-stage rotating unit is located on one side, away from the center of the rotating structure, of the first-stage rotating unit. Illustratively, the rotatable unit is divided into N rotatable units, i.e., N-stage rotatable units, and there is a gap between different rotatable units, and the area of the rotatable units is reduced, which may reduce the driving force required for rotation of the rotating structure.

The rotating unit further includes an electrode unit, as shown in fig. 1, which includes a first electrode 40 and a second electrode 50, a first electrode signal is input to the first electrode 40, and the first electrode signal is input to the ramp unit through the first electrode 40; meanwhile, a second electrode signal is input to the second electrode 50, and the second electrode signal is input to the rotatable unit through the second electrode 50; because the first electrode signal and the second electrode signal are provided with electrostatic force between the rotatable unit and the slope unit, the rotatable unit rotates under the action of the electrostatic force, and corresponding functions are realized. The first electrode and the second electrode can be electrically connected with the slope unit and the rotatable unit respectively, and the specific connection implementation manner is not limited in the embodiment of the invention.

Fig. 3 is a cross-sectional view of a rotating structure provided by an embodiment of the present invention, and fig. 4 is a cross-sectional view of another rotating structure provided by an embodiment of the present invention, where, as shown in fig. 3 and fig. 4, an included angle between a ramp unit 11 in a first-stage rotating unit and a preset plane is i, and an included angle between a ramp unit in a second-stage rotating unit and a preset plane is j, where i > j; if the rotating structure is further provided with a third-stage rotating unit and a fourth-stage rotating unit, the included angle between the slope unit in the second-stage rotating unit and the preset plane is larger than the included angle between the slope unit in the third-stage rotating unit and the preset plane, and the included angle between the slope unit in the third-stage rotating unit and the preset plane is larger than the included angle between the slope unit in the fourth-stage rotating unit and the preset plane; if there are more than four stages of rotation units and so on, no further description is given here. Fig. 3 and 4 illustrate two possible embodiments of the ramp unit, and fig. 4 differs from fig. 3 in that a platform is provided between two adjacent ramp units. Further, the preset plane may be understood as a plane parallel to the bottom of the ramp unit.

Wherein the slope in the slope unit in the first-stage rotation unit is steeper, the slope in the slope unit in the second-stage rotation unit is flatter, and the average distance between the slope unit and the rotatable unit in the first-stage rotation unit is greater than the average distance between the slope unit and the rotatable unit in the second-stage rotation unit. If the rotating structure is further provided with a third-stage rotating unit and a fourth-stage rotating unit, the average distance between the slope unit and the rotatable unit in the second-stage rotating unit is larger than the average distance between the slope unit and the rotatable unit in the third-stage rotating unit, and the average distance between the slope unit and the rotatable unit in the third-stage rotating unit is larger than the average distance between the slope unit and the rotatable unit in the fourth-stage rotating unit; if there are more than four stages of rotation units and so on, no further description is given here. When the rotation angle of the rotation structure is larger, as the selection structure is provided with a multi-stage slope unit, the distance between the slope with the minimum angle and the rotation structure is minimum, and the torsion force is maximum, the rotation structure is driven to rotate by the rotation structure as a main drive; after that, the angle between the slope unit with the angle smaller than the second angle and the rotatable unit is smaller, the distance is smaller, the torsion force is larger, and the slope unit with the angle smaller than the second angle is replaced by mainly driving the structure to rotate, so that the large-angle rotation is finally realized.

In summary, the rotating structure provided by the embodiment of the invention adopts a multi-stage control method, and N is more than or equal to 2 and N is an integer through setting N-stage rotating units, and the smaller the included angle between the slope unit and a preset plane is, the smaller the average distance between the slope unit and the rotatable unit in the rotating unit is. When the rotation angle of the rotation structure is larger, the rotation structure is driven to rotate mainly due to the multistage slope units, the minimum slope of the angle and the minimum interval between the rotation structure are provided, and the torsion force is maximum; after that, the angle between the slope unit with the angle smaller than the second angle and the rotatable unit is smaller, the distance is smaller, the torsion force is larger, and the slope unit with the angle smaller than the second angle is replaced by mainly driving the structure to rotate, so that the large-angle rotation is finally realized.

Alternatively, as shown in fig. 3 and fig. 4, in the rotating structure including N-stage rotating units, the heights of the rotatable units in any two-stage rotating units are the same, so that the multi-stage rotatable units can be manufactured in the same process, and the manufacturing process including the rotating structure is ensured to be simple.

It will be appreciated that in a practical configuration, there may be two levels of rotatable units of different heights in the rotating configuration, as desired, and the embodiments of the present invention are not limited in this regard. The embodiments of the present invention will be described by taking only the case where the heights of the rotatable units in any two-stage rotating unit are the same.

Optionally, the first electrode includes N sub-electrodes; the N sub-electrodes are in one-to-one correspondence with the N slope units; the second electrode is electrically connected with the Nth rotatable unit, and any two adjacent rotatable units are electrically connected.

The rotary structure includes N-stage rotary units, and the rotary unit includes a rotatable unit and a ramp unit, so that the rotary structure has N-stage ramp units, as shown in fig. 1 and3, taking N as 2 as an example, a middle ramp is a ramp unit 11 of a first-stage rotary unit 1, a first ramp unit, ramp units on two sides are ramp units 21 of a second-stage rotary unit 2, and are second ramp units, the first ramp unit and the second ramp unit are sequentially connected, and are structurally connected, each ramp unit corresponds to a sub-electrode of a first electrode 40, the ramp unit 11 of the first-stage rotary structure has a first sub-electrode 14, and the ramp unit 21 of the second-stage rotary structure has a second sub-electrode 24. The first sub-electrode 14 and the second sub-electrode 24 are provided on both sides of the ramp unit 11 of the first-stage rotation structure and the ramp unit 21 of the second-stage rotation structure, respectively, and only one sub-electrode is shown in fig. 1 and2 for the sake of simplicity and clarity of the drawing. If the rotating structure further includes a third stage rotating unit and a fourth stage rotating unit, the third stage rotating unit is respectively located at two sides of the second stage rotating unit where the second stage rotating unit 21 is far from the first stage rotating unit in fig. 3, the fourth stage rotating unit is respectively located at two sides of the third stage rotating unit where the third stage rotating unit is far from the first stage rotating unit, the first, second and third stage rotating units are sequentially connected with the fourth stage rotating unit, the structure is connected, each of the stage rotating units is correspondingly provided with a sub-electrode of a first electrode, the first stage rotating unit is provided with a first sub-electrode, the second stage rotating unit is provided with a second sub-electrode, the third stage rotating unit is provided with a third sub-electrode, the fourth stage rotating unit is provided with a fourth sub-electrode, and the like. Optionally, an insulating layer is further disposed on the N-level slope unit, so that an electrode needs to be disposed on each slope, and different voltage signals can be input to different sub-electrodes in an actual working process. Illustratively, the average distance between the ramp unit and the rotatable unit in the n-th stage rotating unit is greater than the average distance between the ramp unit and the rotatable unit in the n+1-th stage rotating unit, and thus the required driving force is greater, and thus the voltage may be correspondingly greater for the n-th sub-electrode than the n+1-th sub-electrode, and correspondingly smaller for the n+1-th sub-electrode than the n-th sub-electrode.

Further, the second electrode is electrically connected to the nth rotatable unit, the N rotatable units are structurally connected, and the electrical signals are also connected, as shown in fig. 1 and 3, and the second electrode 50 is electrically connected to the second rotatable unit, taking N as 2 as an example. If the rotary structure has a third stage rotary unit and a fourth stage rotary unit, the second electrode 50 is electrically connected to the fourth rotatable unit, and so on if there are more than four stages of rotary units.

According to the rotating structure provided by the embodiment of the invention, a multi-cascade control method is adopted, and N sub-electrodes are arranged in the first electrode, so that the larger the electrostatic driving force of the rotating unit is, the smaller the driving voltage can be, the more reasonable and effective the voltage can be distributed, and the driving efficiency is improved.

Optionally, the rotation unit comprises a first section and a second section; the first subsection and the second subsection in the m-th stage rotating unit are symmetrically arranged relative to the first stage rotating unit; wherein, m is more than 1 and less than N, and m is an integer. As shown in fig. 1 and 3, the rotatable units 22 and the ramp units 21 of the second-stage rotating unit are distributed at both sides of the first-stage rotating unit, symmetrically disposed with respect to the first-stage rotating unit, the rotatable units 22 and the ramp units 21 at the left are the first portions 201 of the second-stage rotating unit, and the rotatable units 22 and the ramp units 21 at the right are the second portions 202 of the second-stage rotating unit. If the rotating structure is further provided with a third-stage rotating unit and a fourth-stage rotating unit, the rotatable unit and the slope unit on the left side of the third-stage rotating unit are the first part of the third-stage rotating unit, the rotatable unit and the slope unit on the right side of the third-stage rotating unit are the second part of the third-stage rotating unit, the rotatable unit and the slope unit on the left side of the fourth-stage rotating unit are the first part of the fourth-stage rotating unit, the rotatable unit and the slope unit on the right side of the fourth-stage rotating unit are the second part of the fourth-stage rotating unit, and if more than four-stage rotating units are provided, the same is true.

Optionally, the rotating structure includes a torsion beam and a support frame; one end of the torsion beam is connected with the rotatable unit, and the other end of the torsion beam is connected with the supporting frame. The torsion beam can be only one-stage torsion beam, all rotatable units rotate around the one-stage torsion beam, the torsion beam can also be an N-stage torsion beam, and an N-stage rotatable unit twists around an N-stage torsion beam. The embodiment of the invention is described by taking the rotary structure with the primary rotary beam as an example, if the N-stage torsion beam is arranged, the torsion beam can be arranged in the N-stage rotatable unit. As shown in fig. 5, the rotating structure may include a primary torsion beam 3 and a support frame 4, and the rotating structure includes a first stage rotating unit 1 and a second stage rotating unit 2, and further includes the primary torsion beam 3 and the support frame 4, and the rotatable unit is twisted around the primary torsion beam 3.

The rotating structure provided by the embodiment of the invention adopts a multi-cascade control method, so that the rotatable unit at one side far away from the center of the rotating structure is driven by a larger electrostatic force to rotate first, and then other rotatable units of the whole rotating structure are driven to rotate, so that the driving force is not only from electric driving, but also from the inertia force of the rotatable unit which rotates first, and the driving efficiency is further improved.

Based on the same inventive concept, the embodiment of the invention also provides a method for preparing the rotary structure, which is used for preparing the rotary structure of the embodiment. Fig. 6 is a schematic flow chart of a method for manufacturing a rotary structure according to an embodiment of the present invention, where the method for manufacturing a rotary structure according to an embodiment of the present invention is used for manufacturing an electrostatically driven rotary structure according to the above embodiment. As shown in fig. 6, the method for manufacturing a rotary structure according to the embodiment of the present invention includes:

S1001, providing a substrate and preparing an N-level ramp unit in the substrate.

The substrate structure may be a structure sequentially including a substrate layer, an insulating layer and a semiconductor layer, for example, may be an SOI (Silicon-On-Insulator) Silicon wafer, or may be a common Silicon wafer, and only one layer of semiconductor structure is provided.

Alternatively, the N-level ramp unit may be prepared in the substrate by using a mobile photolithography technique or a gray scale photolithography technique, or may be prepared by using a wet etching technique, an ion beam etching technique, or the like.

S1002, preparing N-level rotatable units and electrode units on one side of the N-level slope unit, wherein the rotatable units correspond to the slope units one by one to obtain N-level rotating units, and the N-level rotating units are positioned on one side, close to the center of the rotating structure, of the n+1-level rotating units; wherein N is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, and N is an integer; the electrode unit includes a first electrode electrically connected with the ramp unit and a second electrode electrically connected with the rotatable unit for rotating according to an electrostatic force between the first electrode and the second electrode.

The included angle between the slope unit in the nth-level rotating unit and the preset plane is larger than the included angle between the slope unit in the n+1th-level rotating unit and the preset plane; and an average distance between the ramp unit and the rotatable unit in the nth stage of rotation units is greater than an average distance between the ramp unit and the rotatable unit in the n+1th stage of rotation units in a direction perpendicular to the preset plane.

The first electrode may be prepared by ion implantation or by directly preparing a metal electrode, for example. Meanwhile, the rotatable unit is electrically connected with the second electrode, electrode signals are respectively applied to the first electrode and the second electrode, the first electrode and the second electrode are attracted to each other under the action of electrostatic force, and the rotatable unit rotates to drive components on the rotatable unit to rotate, so that corresponding functions are realized. For example, optical wavefront correction or optical element alignment can be implemented, and in particular, different functions can be implemented according to the application scenario of the rotating structure.

In summary, the rotating structure provided by the embodiment of the invention adopts a multi-stage control method, and N is more than or equal to 2 and N is an integer through setting N-stage rotating units, and the smaller the included angle between the slope unit and a preset plane is, the smaller the average distance between the slope unit and the rotatable unit in the rotating unit is. When the rotation angle of the rotation structure is larger, the rotation structure is driven to rotate mainly due to the multistage slope units, the minimum slope of the angle and the minimum interval between the rotation structure are provided, and the torsion force is maximum; after that, the angle between the slope unit with the angle smaller than the second time and the rotatable unit is smaller, the distance is smaller, the torsion force is larger, and the slope unit with the angle smaller than the second time is replaced by a main driving structure to rotate, so that the large-angle rotation is finally realized; and the driving voltage can be reduced better by controlling the gap between the slope unit and the movable rotating unit, so that the required driving voltage is much smaller than that of the rotating structure of a single slope, and the technical problem of larger driving voltage in the driving process of the rotating structure in the prior art is solved.

The method for preparing the rotary structure is described in detail below in conjunction with the actual preparation process.

First, a method for preparing an N-level ramp unit will be described in detail, and in the embodiment of the present invention, a mobile lithography technique will be used as an example for illustration.

Fig. 7 is a schematic flow chart of another method for manufacturing a rotating structure according to an embodiment of the present invention, where the method for manufacturing a rotating structure according to an embodiment of the present invention is used to manufacture an electrostatically driven rotating structure according to the above embodiment. As shown in fig. 7, the method for manufacturing a rotary structure according to the embodiment of the present invention includes:

s2001, providing a mask plate, wherein the mask plate comprises a first exposure opening and a second exposure opening.

As shown in fig. 8, the mask 210 includes a first exposure port 211 and a second exposure port 212. Optionally, the mask further includes a first mask and a second mask, the first mask is used for preparing a first-stage slope unit, the second mask is used for preparing a second-stage slope unit, the mask may further include a third mask and a fourth mask, the third mask is used for preparing a third-stage slope unit, the fourth mask is used for preparing a fourth-stage slope unit, and the like, the mask may include an nth mask for the nth-stage slope unit.

As shown in fig. 9, a principle of moving lithography is shown, a layer of photoresist 10 is prepared on a substrate 310, then a mask 210 is placed above the photoresist, light emitted by a lithography machine irradiates the photoresist 10 through a first exposure port 211 and a second exposure port 212, the photoresist 10 is denatured after exposure, a region where denaturation occurs on the photoresist 10 of the substrate 310 is moved to form a slope groove, the region where denaturation occurs on the photoresist 10 of the substrate 310 is continuously moved to form a slope structure, the photoresist is developed to form a photoresist slope structure on the photoresist 10, and then the photoresist slope structure is transferred to the substrate 310, so that the slope structure can be obtained.

S2002, preparing a first oxide layer on one side of a substrate, and patterning the first oxide layer, wherein the first oxide layer exposes a preparation area of an N-level slope unit;

s2003, preparing photoresist on one side of the first oxide layer far away from the substrate and in the exposed area of the first oxide layer;

S2004, performing mask exposure on the substrate through the mask plate and simultaneously moving the substrate to form an N-level slope unit on the substrate. Wherein the movement speed of the substrate when the n-th level slope unit is prepared is smaller than that when the n+1-th level slope unit is prepared.

Taking N as 2 as an example to illustrate the preparation process of the N-level ramp unit, as shown in fig. 10 and 11, the preparation process of fabricating the first-level ramp unit 11 is illustrated, the substrate 310 may be a structure sequentially including the substrate layer 311, the insulating layer 312 and the semiconductor layer 313, the first oxide layer 320 is prepared on the surface of the semiconductor layer 313 of the substrate 310, and the photoresist, the photolithography and the development are performed, and the patterning are performed, so that the first oxide layer 320 exposes the preparation area 3101 of the first-level ramp unit 11. With continued reference to fig. 10, a photoresist 10 is prepared on the surface of the first oxide layer 320, and covers the surface of the first oxide layer 320 and the preparation area 3101 of the first level ramp unit 11, and a binary mask plate as shown in fig. 8 is used to place the binary mask plate on one side of the photoresist 10 above the substrate 310, and the substrate 310 is moved at a constant speed while performing mask exposure, and then developed to obtain a photoresist ramp structure. The first semiconductor layer 313 of the substrate 310 is etched by the photoresist slope structure, the photoresist slope structure pattern is transferred to the semiconductor layer 313, and the photoresist is removed, resulting in the first level slope unit 11, as shown in fig. 11.

Fig. 12 and 13 show a process of fabricating the second-stage slope unit 21, continuing to perform photolithography and development on the first oxide layer 320 shown in fig. 11, patterning to expose the first oxide layer 320 to the fabrication region of the second-stage slope unit 21, then preparing the photoresist 10 on the surface of the first oxide layer 320, covering the surfaces of the first oxide layer 320 and the fabrication region of the second-stage slope unit 21, placing the second mask on one side of the photoresist 10 above the substrate 310, performing mask exposure while uniformly moving the substrate 310, and developing to obtain the photoresist slope structure. The first semiconductor layer 313 of the substrate 310 is etched by the photoresist slope structure, the photoresist slope structure pattern is transferred to the semiconductor layer 313, and the photoresist is removed, resulting in the second level slope unit 21, as shown in fig. 13.

Further, the slope structure may be etched along the center of the first-stage slope unit 11, as shown in fig. 14, so that the left and right portions of the slope unit are separated and not connected, and the left and right portions of the slope unit may have different electrical properties.

Optionally, the center of the first stage ramp unit 11 etches the ramp structure, and this step may be omitted according to the electrical signal distribution of the N stage ramp unit, which is not limited by the embodiment of the present invention.

S2005, preparing N-level rotatable units and electrode units on one side of the N-level slope unit, wherein the rotatable units correspond to the slope units one by one to obtain N-level rotating units, and the N-level rotating units are positioned on one side of the n+1-level rotating units close to the center of the rotating structure; wherein N is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, and N is an integer; the electrode unit includes a first electrode electrically connected with the ramp unit and a second electrode electrically connected with the rotatable unit for rotating according to an electrostatic force between the first electrode and the second electrode.

Optionally, the preparing the first oxide layer on one side of the substrate and patterning the first oxide layer may further include:

Preparing an oxidation protection layer on one side of the substrate, patterning the oxidation protection layer, covering the preparation area of the N-level slope unit by the oxidation protection layer, performing thermal oxidation treatment on the area exposed by the oxidation protection layer, forming an oxidation structure on the area exposed by the oxidation protection layer, and removing the oxidation protection layer and the oxidation structure so that the surface of the preparation area of the N-level slope unit is higher than that of the non-preparation area of the N-level slope unit.

As shown in fig. 15, a layer of oxidation protection layer 20 is grown on the surface of the substrate 310, and the pattern of the oxidation protection layer 20 is glued, photo-etched and developed, so that the oxidation protection layer 20 covers the surface of the preparation area 3103 of the N-level slope unit, and exposes an area outside the preparation area 3103 of the N-level slope unit on the substrate 310, i.e., exposes the non-preparation area 3104 of the N-level slope unit on the substrate 310. Optionally, the oxidation protection layer may be silicon nitride, and the oxidation protection layer may protect the silicon wafer 310 from being oxidized, and the material of the oxidation protection layer is not limited in the embodiment of the present invention; the material of the silicon wafer is not limited in the embodiment of the present invention, the silicon wafer 310 may be an SOI silicon wafer, and fig. 15 is merely a schematic diagram illustrating the preparation of the oxidation protection layer 20, so as to facilitate understanding, and the structure of the silicon wafer 310 is not illustrated in detail.

With continued reference to fig. 15, the substrate 310 is subjected to a thermal oxidation process, the preparation region 3101 covered by the oxidation protection layer 20 is not oxidized, and the non-preparation region 3104 not covered by the oxidation protection layer 20 is oxidized etched to form the oxidized structure 30. Alternatively, the oxide structure may be associated with a substrate structure, where the substrate structure may be a silicon wafer and the oxide structure may be a silicon oxide. The oxidation protection layer 20 protects the preparation region 3103 from oxidation etching, the non-preparation region 3104 is thinned by oxidation, and after the oxidation protection layer 20 and the oxidation structure 30 are removed, the preparation region 3103 of the N-level slope unit of the substrate 310 is higher than the non-preparation region 3104.

The preparation area of the N-level slope unit is covered by the oxidation protection layer, so that the preparation area of the N-level slope unit is prevented from being oxidized, steps are formed in the preparation area of the N-level slope unit and the preparation area of the non-N-level slope unit, and the distance between the N-level slope unit and the rotatable unit can be adjusted subsequently.

Optionally, on the basis of the foregoing embodiment, the method for manufacturing a rotating structure further includes:

the distance between the N-stage ramp unit and the rotatable unit is adjusted.

By way of example, the driving voltage can be regulated by adjusting the distance between the N-stage ramp unit and the rotatable unit, the closer the distance between the ramp unit and the rotatable unit is, the greater the driving force, and the smaller the driving voltage required; the farther the distance between the ramp unit and the rotatable unit, the smaller the driving force, and the greater the driving voltage required.

Further, adjusting the distance between the ramp structure and the rotatable structure may include a number of different embodiments, as described below.

Optionally, the mask plate further comprises an isolation mask structure located between the first exposure opening and the second exposure opening;

adjusting the distance between the N-stage ramp unit and the rotatable unit may further include:

The distance between the N-level ramp unit and the rotatable unit is adjusted by adjusting at least one of the thickness of the first oxide layer, the thickness of the oxide structure, and the width of the isolation mask structure.

As one possible embodiment, the thickness of the first oxide layer 320 may affect the initial gap between the ramp structure and the rotatable structure, as shown in fig. 13, the thicker the first oxide layer 320, the farther the distance between the N-level ramp unit and the rotatable unit, the greater the initial gap therebetween; the thinner the first oxide layer 320, the closer the distance between the N-level ramp cell and the rotatable cell, the smaller the initial gap between the two. The distance between the N-level slope unit and the rotatable unit can be adjusted by adjusting the thickness of the first oxide layer.

As another possible embodiment, the oxide etch depth of the oxidized structure 30 may also affect the initial gap between the ramp structure and the rotatable structure, as shown in fig. 15, the deeper the oxide etch of the oxidized structure 30, the greater the difference in height between the prepared region 3103 and the non-prepared region 3104, the smaller the initial gap between the N-level ramp unit and the rotatable unit; the shallower the oxide etch of the oxidized structure 30, the smaller the difference in height between the prepared region 3103 and the non-prepared region 3104, the greater the initial gap between the N-level ramp unit and the rotatable unit. The distance between the N-level slope unit and the rotatable unit can be adjusted by adjusting the thickness of the oxidation structure.

In still another possible implementation, the width of the isolation mask structure 213 may also affect the initial gap between the slope structure and the rotatable structure, as shown in fig. 16, where the dark light areas of the first exposure port 211 and the second exposure port 212 on the reticle 210 are the isolation mask structure 213, if the isolation mask structure 213 is too narrow, the photolithography area overlaps, the slope structure is shorter, and the initial gap between the slope structure and the rotatable structure is larger; the isolation mask structure 213 is properly widened, the overlap area of the lithographic region is reduced, the ramp structure is higher, and the initial gap between the ramp structure and the rotatable structure is smaller. By adjusting the width of the isolation mask structure 213, the distance between the N-level ramp unit and the rotatable unit can be adjusted. It should be noted that fig. 16 only shows the distance between the first-stage slope unit and the rotatable unit, and the distance between the second-stage slope unit and the rotatable unit may be adjusted to adjust the isolation mask structure of the second mask.

The driving voltage can be reduced better by controlling the gap between the slope unit and the rotatable unit, so that the required driving voltage is much smaller than that of the rotating structure of a single slope, and the technical problem of larger driving voltage in the driving process of the rotating structure in the prior art is solved. For example, the gap between the ramp unit and the rotatable unit is typically 0.1 μm to 1 μm, and with other parameters unchanged, when the gap between the ramp unit and the rotatable unit is reduced from 1um to 0.5um, the drive voltage rotated by 0.3 ° is reduced from 7V to 5V, so when the gap is further reduced, the drive voltage can be further reduced.

Next, an N-stage rotatable unit and electrode structure is prepared on the N-stage ramp unit side in two possible embodiments. Wherein the height of the rotatable units in any two-stage rotating unit is the same.

As a possible implementation manner, fig. 17 is a schematic flow chart of a method for preparing a rotary structure according to another embodiment of the present invention, and as shown in fig. 17, the method for preparing a rotary structure according to the embodiment of the present invention may include:

s3001, providing a substrate and preparing an N-level ramp unit in the substrate.

By way of example, the N-level ramp unit may be fabricated in the substrate using a mobile lithography technique or a gray scale lithography technique, or may be fabricated using a wet etching, ion beam etching, or the like, and will not be described in detail herein.

S3002, providing a first semiconductor layer, and bonding the first semiconductor layer and the first oxide layer.

As shown in fig. 18, the ramp unit further includes a first oxide layer 320 located at one side of the substrate 310, a first semiconductor layer 413 is provided, and the first semiconductor layer 413 and the first oxide layer 320 are bonded. For example, the upper surface of the first semiconductor layer 413 is the first surface 4131, the lower surface is the second surface 4132, the second surface 4132 of the first semiconductor layer 413 is bonded with the first oxide layer 320, and the first surface 4131 of the first semiconductor layer 413 is thinned to a predetermined thickness after annealing and bonding are performed, as shown in fig. 18, which is a schematic structural diagram of the first semiconductor layer 413 thinned to the predetermined thickness. For example, when the first semiconductor layer 413 is silicon, the semiconductor layer 313 of the substrate 310 is silicon, and the first oxide layer 320 is silicon oxide, a silicon-silicon bond may be between the first semiconductor layer 413 and the first oxide layer 320. Alternatively, the thickness of the first semiconductor layer 413 may be 10 to 100 μm, for example, 30 μm. Optionally, the thinning operation may be a polishing process, and the thinning method is not limited in the embodiment of the present invention. In fig. 18, the first semiconductor layer 413 is described as a single-layer structure, and it is understood that, in order to ensure that the surface smoothness of the first semiconductor layer 413 is good and the thickness of the first semiconductor layer 413 is small, a SOI structure may be similarly selected, and the insulating layer and the substrate are removed to obtain an independent first semiconductor layer 413.

S3003, patterning the first semiconductor layer to obtain N-level rotatable units and a first electrode preparation window, wherein the first electrode preparation window exposes the first oxide layer, and N slope units are sequentially connected.

As shown in fig. 19, taking N as 2 as an example, the first semiconductor layer 413 is etched to obtain the first-stage optional unit 12 and the second-stage rotatable unit 22, and a first electrode preparation window 4133 is obtained in the first semiconductor layer 413, and the first electrode preparation window 4133 exposes the first oxide layer 320, so that the electrode electrically connected to the ramp unit can be prepared later. The first stage slope unit 11 and the second stage slope unit 21 are sequentially connected, the structures are connected, and the electric signals are also connected. Alternatively, the etching process may use a deep silicon etching method, which is not limited in the embodiment of the present invention.

S3004, etching the first oxide layer through the first electrode preparation window to expose the substrate.

As shown in fig. 20, the first oxide layer 320 is etched through the first electrode preparation window 4133 to expose the substrate, exposing the semiconductor layer 313 of the substrate 310, facilitating the subsequent preparation of electrodes electrically connected to the ramp structure.

Optionally, etching the first oxide layer through the first electrode preparation window to expose the substrate includes:

And over-etching the first oxide layer through the first electrode preparation window, wherein the etching area of the first oxide layer is larger than the exposure area of the first electrode preparation window.

For example, when the oxide layer is etched to expose the lower electrode window, due to the isotropic property of oxide layer etching, the longitudinal etching depth and the transverse etching depth are consistent, and excessive etching can be selectively performed, so that the first semiconductor layer 413 on the upper side of the first oxide layer 320 is partially suspended, as shown in fig. 21, when the electrode is subsequently prepared, the electrode layer is disconnected at the suspended position of the first semiconductor layer 413, and the electrode plate is prevented from being shorted. Specifically, the depth of the lateral etching is 1-2 times the thickness of the oxide layer, for example, the thickness of the oxide layer is 0.5um, and the lateral etching depth can be 0.5 um-1 um.

S3005, preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, wherein the first electrode is electrically connected with the Nth grade slope unit; and preparing a second electrode and a second electrode wiring terminal on the surface of one side of the first semiconductor layer far away from the substrate, wherein the second electrode wiring terminal is electrically connected with the second electrode.

As shown in fig. 21, taking N as 2 as an example, the first electrode 40 is prepared on the surface of the substrate corresponding to the position of the first electrode preparation window, and the first electrode 40 is electrically connected to the second-stage ramp unit 21. The second electrode 50 and the second electrode connection terminal 51 are prepared on a surface of the first semiconductor layer 413 on a side remote from the substrate 310. A second electrode connection terminal 51 is prepared on a surface of the first semiconductor layer 413 remote from the substrate, the second electrode 50 being electrically connected to a second rotatable unit, the second rotatable unit being electrically connected to the first rotatable unit. If the rotary structure has a third stage rotary unit and a fourth stage rotary unit, the second electrode 50 is electrically connected to the fourth rotatable unit, and so on if there are more than four stages of rotary units. The second electrode 50 or the second electrode connection terminal 51 may be on either side of the rotatable unit, which is not limited in the embodiment of the present invention. The second electrode connection terminal 51 is electrically connected to the second electrode 50.

For example, the first electrode 40, the second electrode 50 and the second electrode terminal 51 may be prepared by using metal thin film deposition and photolithography processes, and the preparation processes of the electrodes and the electrode terminals are not limited in the embodiment of the present invention. The first electrode 40 is input with a first electrode signal, the first electrode signal is directly transmitted to the first electrode 40 and then is input to the 2 nd stage slope unit 21, the first stage slope unit 11 and the second stage slope unit 21 are sequentially connected, structurally connected, and the electric signals are also connected; meanwhile, a second electrode signal is input to the second electrode 50, the second electrode signal is conducted to the second electrode 50 through the second electrode wiring terminal 51 and then input to the rotatable unit, the first electrode 40 and the second electrode 50 generate electrostatic force under the action of the first electrode signal and the second electrode signal, and the rotatable unit rotates under the action of the electrostatic force to achieve corresponding functions.

The above-described embodiments illustrate the process of fabricating the rotatable structure and the electrode structure using silicon-silicon bonding, and the N-stage rotatable unit and the electrode unit are fabricated on the N-stage ramp unit side using aluminum-germanium bonding as an example. The first electrode comprises N sub-electrodes, and the N sub-electrodes are in one-to-one correspondence with the N slope units; the second electrode is electrically connected with the nth rotatable unit, and any two adjacent rotatable units are electrically connected.

Fig. 22 is a flow chart of another method for manufacturing a rotating structure according to an embodiment of the present invention, where, as shown in fig. 22, the method for manufacturing a rotating structure according to an embodiment of the present invention includes:

S4001, providing a substrate and preparing an N-level ramp unit in the substrate.

S4002, preparing a second oxide layer on the surface of the substrate and the N-level slope.

As shown in fig. 23, a second oxide layer 330 is prepared on the surface of the substrate 310 and the ramp structure 1. Illustratively, after the preparation process of the ramp unit 1 is completed, the substrate structure 310 formed with the ramp unit 1 is cleaned to remove surface impurities and the first oxide layer. Alternatively, the substrate 310 may be a common silicon wafer or a silicon wafer with an SOI structure, and the material and the structure of the substrate are not limited in the embodiment of the present invention.

S4003, preparing a first electrode, a first electrode wiring terminal and a first bonding terminal on one side of the second oxide layer far away from the substrate; the first electrode comprises N sub-electrodes, and N slope units are sequentially connected.

As shown in fig. 24, taking N as 2 as an example, a first electrode 40, a first electrode connection terminal 41 and a first bonding terminal 42 are prepared on one side of the substrate 310, the first electrode 40 includes a first sub-electrode 14 and a second sub-electrode 24, the first sub-electrode 14 corresponds to the first-stage slope unit 11, the second sub-electrode 24 corresponds to the second-stage slope unit 21, if N is 3 or 4, the first electrode further includes a third sub-electrode and/or a fourth sub-electrode, the third sub-electrode corresponds to the third-stage slope unit, the fourth sub-electrode corresponds to the fourth-stage slope unit, and so on. Alternatively, a metal thin film deposited aluminum may be used as the first electrode 40 and the first bonding terminal 42. Alternatively, according to the electric signal distribution of the first electrode sub-electrode, the first bonding terminal may include a plurality of sub-terminals, if the electric signal of the first electrode sub-electrode is positive and negative according to two sides, the first bonding terminal may include a first sub-terminal and a second sub-terminal, and there is an electric signal with opposite positive and negative, and if the electric signal of the first electrode sub-electrode has a numerical gradient, a corresponding number of sub-terminals is set according to the positive and negative and numerical gradient.

S4004, providing a second semiconductor layer and preparing a second bonding terminal on a side surface of the second semiconductor.

S4005, bonding the first bonding terminal and the second bonding terminal.

S4006, thinning and patterning the second semiconductor layer, resulting in a rotatable unit and exposing the first electrode connection terminal.

As shown in fig. 25, a second semiconductor layer 410 is provided and a second bonding terminal 52 is prepared on one side surface of the second semiconductor layer 410. As shown in fig. 25, 26 and 27, the first bonding terminal 42 and the second bonding terminal 52 are bonded; the second semiconductor layer 410 is thinned and etched to obtain a rotatable structure and expose the first electrode connection terminal 41. Alternatively, the second bonding terminal 52 may be germanium metal and the first bonding terminal 42 and the second bonding terminal 52 may be bonded in an aluminum-germanium bond. In fig. 25, the second semiconductor layer 410 is in the SOI form, and after the bonding of the first bonding terminal 42 and the second bonding terminal 52 is completed, the insulating layer 412 and the substrate layer 411 are removed, and the remaining semiconductor layer 413 is removed, so that a separate second semiconductor layer 410 is obtained, and a single-layer structure may be selected, and the structure of the second semiconductor layer 410 is not limited in the embodiment of the present invention. Alternatively, the etching process may use a deep silicon etching method, which is not limited in the embodiment of the present invention.

S4007, preparing a second electrode and a second electrode connection terminal on a side of the second semiconductor layer away from the substrate.

As shown in fig. 27, the second electrode 50 and the second electrode connection terminal 51 are prepared on the side of the semiconductor layer 413 of the second semiconductor layer away from the substrate 310. For example, the second electrode 50 and the second electrode connection terminal 51 may be prepared by using a metal thin film deposition and photolithography process, and the preparation process of the second electrode 50 and the second electrode connection terminal 51 is not limited in the embodiment of the present invention. The first electrode is input with a first electrode signal, and the first electrode signal is input into the slope unit through the first electrode; meanwhile, a second electrode signal is input to the second electrode 50, the second electrode signal is conducted to the second electrode through the second electrode wiring terminal 51, the rotatable unit is input, the slope unit and the rotatable unit generate electrostatic force under the action of the first electrode signal and the second electrode signal, and the rotatable unit rotates under the action of the electrostatic force to achieve corresponding functions. The first electrode comprises N sub-electrodes, in the actual working process, the electrical signals of the sub-electrodes can be different, if the same equivalent voltage signals are input, the slope unit closer to the rotatable unit has larger electrostatic driving force, and the slope unit closer to the rotatable unit can be input with smaller electrical signals to enable the rotating structure to work normally, so that the rotating structure can work in a more efficient and more energy-saving mode.

The above embodiments illustrate the preparation process of preparing the N-level rotatable unit and the electrode unit on one side of the N-level ramp unit in two possible embodiments, and the specific preparation process of the rotatable unit and the electrode unit is not limited in the embodiments of the present invention, and other preparation processes of the rotatable structure and the electrode structure are also within the protection scope of the embodiments of the present invention.

The multi-stage movable rotating unit, the multi-stage slope unit and the supporting frame are all manufactured on the same substrate structure and take a substrate structure layer as a common bottom layer, and the multi-stage movable rotating unit and the multi-stage slope unit are positioned in the supporting frame structure; the multistage movable rotation unit includes a first/second semiconductor layer and a second electrode fabricated on the first/second semiconductor layer using a MEMS process. The multistage slope units are manufactured below the multistage rotatable units and correspond to each other one by one, two slopes are formed on the surfaces of the multistage slope units, and slope ridge lines are located under or near the movable rotating structure. The slope angle of the first-stage slope unit is 0-90 degrees, the slope angle of the first-stage slope unit is larger than that of the second-stage slope unit, the slope angle of the second-stage slope unit is larger than that of the third-stage slope unit, and the like until the nth-stage slope unit, wherein N is larger than or equal to 2 and N is an integer, and the slope angle of the nth-stage slope unit is larger than 0 degrees.

The steps of the preparation method of the rotating structure are described in detail, and the rotating structure provided by the embodiment of the invention adopts a multi-stage control method, and by setting N-stage rotating units, wherein N is more than or equal to 2, N is an integer, the smaller the included angle between the slope unit and a preset plane is, the smaller the average distance between the slope unit and the rotatable unit in the rotating unit is. When the rotation angle of the rotation structure is larger, the rotation structure is driven to rotate mainly due to the multistage slope units, the minimum slope of the angle and the minimum interval between the rotation structure are provided, and the torsion force is maximum; after that, the angle between the slope unit with the angle smaller than the second time and the rotatable unit is smaller, the distance is smaller, the torsion force is larger, and the slope unit with the angle smaller than the second time is replaced by a main driving structure to rotate, so that the large-angle rotation is finally realized; and the driving voltage can be reduced better by controlling the gap between the slope unit and the movable rotating unit, so that the required driving voltage is much smaller than that of the rotating structure of a single slope, and the technical problem of larger driving voltage in the driving process of the rotating structure in the prior art is solved. And the N sub-electrodes are arranged in the first electrode, so that the driving voltage can be smaller, the voltage can be distributed more reasonably and effectively, and the driving efficiency is improved. By adopting the multi-cascade control method, the rotatable unit at one side far away from the center of the rotating structure can firstly rotate under the drive of a large electrostatic force, and then other rotatable units of the whole rotating structure are driven to rotate, so that the driving force is not only from electric driving, but also from the inertia force of the rotatable unit which rotates first, and the driving efficiency is further improved.

Note that the above is only a preferred embodiment of the present invention and the technical principle applied. Those skilled in the art will appreciate that the invention is not limited to the specific embodiments herein, and that features of the various embodiments of the invention may be partially or fully coupled or combined with each other and may be coordinated with each other and driven technically in various ways. Various obvious changes, rearrangements, combinations and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims

1. The rotating structure is characterized by comprising N-level rotating units, wherein the N-level rotating unit is positioned at one side of the n+1-level rotating unit close to the center of the rotating structure; wherein N is more than or equal to 2, N is an integer, N is more than or equal to 1 and less than N, and N is an integer;

The rotating unit comprises a first subsection and a second subsection;

The first subsection and the second subsection in the m-th stage rotating unit are symmetrically arranged relative to the first stage rotating unit; wherein m is more than 1 and less than N, and m is an integer;

The included angle between the slope unit in the nth-stage rotating unit and the preset plane is larger than the included angle between the slope unit in the n+1th-stage rotating unit and the preset plane; and the average distance between the slope unit and the rotatable unit in the n-th level rotating unit is larger than the average distance between the slope unit and the rotatable unit in the n+1-th level rotating unit along the direction perpendicular to the preset plane;

The preset plane is a plane parallel to the bottom of the slope unit;

the rotatable units in any two stages of the rotatable units are the same in height, or the rotatable units in any two stages are different in height.

2. The rotating structure of claim 1, wherein the first electrode comprises N sub-electrodes;

the N sub-electrodes are in one-to-one correspondence with the N slope units;

3. A method for producing a rotary structure according to any one of claims 1 to 2, characterized in that the production method comprises:

providing a substrate and preparing an N-level slope unit in the substrate;

4. A method of manufacturing according to claim 3, wherein manufacturing an N-level ramp unit in the substrate comprises:

5. The method of manufacturing according to claim 4, wherein manufacturing the N-level ramp unit in the substrate using a mobile lithography technique comprises:

6. The method of manufacturing according to claim 5, further comprising, before preparing the first oxide layer on the substrate side and patterning the first oxide layer:

7. The method of manufacturing according to claim 6, further comprising:

The distance between the N-stage ramp unit and the rotatable unit is adjusted.

8. The method of claim 7, wherein the reticle further comprises an isolation mask structure between the first exposure port and the second exposure port;

9. A production method according to claim 3, wherein the heights of the rotatable units in any two stages of the rotatable units are the same;

10. A production method according to claim 3, wherein the heights of the rotatable units in any two stages of the rotatable units are the same;

bonding the first bonding terminal and the second bonding terminal;