CN113261188A - DC power supply device - Google Patents
DC power supply device Download PDFInfo
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- CN113261188A CN113261188A CN202080007763.2A CN202080007763A CN113261188A CN 113261188 A CN113261188 A CN 113261188A CN 202080007763 A CN202080007763 A CN 202080007763A CN 113261188 A CN113261188 A CN 113261188A
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- switching element
- control
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H33/00—High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
- H01H33/02—Details
- H01H33/59—Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the AC cycle
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/06—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
- Rectifiers (AREA)
Abstract
该直流电源装置的控制部构成为：在同时进行了将串联用开关元件断开的控制和将导通切换元件断开的控制之后进行将半导体开关元件断开的控制、或者进行将串联用开关元件、导通切换元件、半导体开关元件按此顺序断开的控制。
The control unit of the DC power supply device is configured to perform control to turn off the semiconductor switching element after performing the control to turn off the switching element for series and the control to turn off the conduction switching element at the same time, or to perform the control for turning off the switching element for series. Control to turn off the element, the conduction switching element, and the semiconductor switching element in this order.
Description
Technical Field
The present invention relates to a dc power supply device, and more particularly to a dc power supply device including a current interruption unit that interrupts a high-voltage current at high speed.
Background
Protection against an accident current in the output of the dc power supply device is generally performed by a fuse or a mechanical dc breaker. However, the conventional mechanical dc breaker has a long time required to break the current-withstanding capability of a power semiconductor such as an IGBT used in a dc power supply device, and therefore, it is not time to protect the semiconductor element, and thus the influence of an accident may be increased. Therefore, as a conventional solution, a power supply device including a current interruption unit that interrupts a high-voltage current at high speed is known. Such a dc power supply device is described in, for example, japanese patent application laid-open No. 2019-36405.
Japanese patent application laid-open No. 2019-36405 discloses a power supply device including a main circuit switch (thyristor or mechanical switch) provided between a power supply and a load, and a capacitor connected in parallel to the main circuit switch. In the power supply device, when an accident current flows through the main circuit switch, a superimposed current flows from the capacitor to the main circuit switch. The superimposed current flows through the main circuit switch in a direction opposite to the accident current. Thus, the fault current is cancelled by the superimposed current, and the main circuit switch can be switched off at a high speed. In addition, even when a mechanical switch is used as the main circuit switch, since the occurrence of arcing at the main circuit contact at the time of opening is suppressed, the main circuit switch can be cut off at a high speed, and an increase in conduction loss can be suppressed.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2019-36405
Disclosure of Invention
Problems to be solved by the invention
However, in the above-mentioned japanese patent application laid-open No. 2019-36405, a shunt capacitor needs to be provided in order to pass the superimposed current to the main circuit switch. Here, since the current diverting capacitor is a relatively large-sized element, the power supply device may be large-sized. Therefore, a dc power supply device capable of cutting off an accident current at a high speed and realizing miniaturization is desired.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a dc power supply device capable of cutting off an accident current at a high speed while suppressing an increase in conduction loss, and capable of downsizing the dc power supply device.
Means for solving the problems
In order to achieve the above object, a dc power supply device according to one aspect of the present invention includes: a rectifier that converts an ac input voltage supplied from an ac voltage source into a dc voltage; a current cutoff unit that electrically connects and disconnects the rectifier and the load; and a control unit that controls the rectifier and the current cutoff unit, wherein the current cutoff unit includes: a series circuit including a series switching element having a withstand voltage larger than a rated voltage of a direct-current voltage and a self-extinguishing type conduction switching element having a withstand voltage smaller than the rated voltage, the conduction switching element being connected in series with the series switching element on a load side; and a self-extinguishing semiconductor switching element having a withstand voltage larger than a rated voltage, connected in parallel with the series circuit, the series switching element and the conduction switching element each having a conduction loss smaller than a conduction loss of the semiconductor switching element, wherein the control unit is configured to: the control of turning off the semiconductor switching element is performed after the control of turning off the series switching element and the control of turning off the on switching element are performed simultaneously, or the control of turning off the series switching element, the on switching element, and the semiconductor switching element in this order is performed, thereby performing the control of turning off the current interrupting unit. The series switching element includes not only a semiconductor element but also a mechanical switch.
In the dc power supply device according to the aspect of the present invention, as described above, the series switching element is turned off after the control for turning off the series switching element and the control for turning off the on switching element are simultaneously performed, or the series switching element, the on switching element, and the semiconductor switching element are turned off in this order. Thus, the current flowing through the series switching element and the on switching element is diverted to the semiconductor switching element, and therefore the semiconductor switching element can be turned off in a state where all the current flows through the semiconductor switching element. Here, since the semiconductor switching element does not generate an arc when turned off, it is not necessary to use the charging energy of the capacitor to flow the superimposed current to the semiconductor switching element in order to turn off the semiconductor switching element at a high speed. Therefore, by performing the control as described above, the fault current can be cut off at high speed by the semiconductor switching element without using a capacitor. This makes it possible to cut off the fault current at a high speed and to reduce the size of the DC power supply device.
Further, by connecting a series circuit of a series switching element and a conduction switching element, which have smaller conduction losses than the semiconductor switching element, in parallel with the semiconductor switching element, it is possible to cause at least a part of the current to flow also on the side of the series circuit having smaller conduction losses, unlike the case where only the semiconductor switching element is provided. As a result, conduction loss (power consumption) can be suppressed as compared with the case where only the semiconductor switching element is provided. As a result, the increase in conduction loss can be suppressed, and the fault current can be cut off at high speed, and the dc power supply device can be downsized.
In addition, by diverting the current flowing through the series switching element and the on switching element to the semiconductor switching element, the semiconductor switching element can be turned off in a state where no current flows through the series switching element and the on switching element. Thus, when the semiconductor switching element is turned off, the semiconductor switching element and the series switching element receive the rated voltage of the dc power supply device, while the series switching element provided at the stage preceding the on switching element is turned off, so that the voltage received by the on switching element is substantially zero. As a result, the on switching element can be prevented from receiving a voltage (rated voltage) equal to or higher than the withstand voltage, and thus the on switching element can be prevented from being broken. Further, since the withstand voltage of each of the series switching element and the conduction switching element is equal to or higher than the rated voltage, neither the series switching element nor the conduction switching element is destroyed. This can suppress the destruction of the element (on switching element) of the current interrupting portion.
In the dc power supply device according to the above aspect, preferably, the control unit is configured to: after the control for turning off the series switching element and the control for turning off the on switching element are simultaneously performed, the control for turning off the semiconductor switching element is performed, thereby performing the control for turning off the current interrupting unit. Here, when there is a time difference between the control for turning off the series-connection switching element and the control for turning off the on-switching element, the control for turning off the semiconductor switching element is delayed in accordance with the time difference, and therefore, the time for flowing a current to the semiconductor switching element increases. By simultaneously performing the control of turning off the series-connection switching element and the control of turning off the on-switching element, it is possible to suppress the occurrence of a delay in the control of turning off the semiconductor switching element and to suppress an increase in the time during which the current flows to the semiconductor switching element. Here, the size of the semiconductor switching element depends on the energizable time. Therefore, by suppressing an increase in the time during which the current flows to the semiconductor switching element, an element having a relatively short energizing time can be used as the semiconductor switching element. As a result, the semiconductor switching element can be prevented from becoming large.
In the dc power supply device according to the above aspect, the control unit is preferably configured to perform control of cutting off the current cutting unit as follows: the on-switching element is controlled to be turned off so that a current flowing through a series circuit of the series switching element and the on-switching element is diverted to the semiconductor switching element side, and the semiconductor switching element is controlled to be turned off after the current no longer flows through the series switching element. With this configuration, it is possible to suppress the semiconductor switching element from being turned off while a current still flows in the series circuit including the series switching element and the on switching element. As a result, the series switching element can be reliably turned off when the semiconductor switching element is turned off. As a result, the on switching element can be more reliably suppressed from receiving a high voltage (rated voltage).
In this case, the conduction switching element is configured to be capable of switching at a higher speed than the series switching element, and the control unit is configured to: the control of turning off the current interrupting unit is performed by performing control of turning off the semiconductor switching element after a predetermined time equal to or longer than an off time of the series switching element has elapsed since performing control of turning off the on switching element. With this configuration, the semiconductor switching element can be more reliably turned off after no current flows through the series switching element.
In the dc power supply device according to the above aspect, preferably, the control unit is configured to: after the control of turning on the semiconductor switching element, the control of turning on the series switching element and the conduction switching element is performed, thereby turning on the current cut-off portion. With this configuration, since the series switching element and the conduction switching element can be prevented from being turned on while the semiconductor switching element is turned off, the application of a high voltage (the rated voltage of the dc power supply device) to the conduction switching element can be prevented.
In this case, the control unit is configured to: after the semiconductor switching element is turned on to increase the output voltage of the current interrupting unit and the increase of the output voltage is stopped, the series switching element and the conduction switching element are controlled to be turned on to turn on the current interrupting unit. Here, the voltage applied to the semiconductor switching element decreases in accordance with an increase in the output voltage of the current interrupting unit. Therefore, by performing control to turn on the series switching element and the conduction switching element after the increase of the output voltage of the current interrupting unit is stopped, the series switching element and the conduction switching element can be turned on after the voltage received by the semiconductor switching element becomes minimum. As a result, the conduction switching element connected in parallel with the semiconductor switching element also receives a voltage having the same magnitude as the voltage received by the semiconductor switching element, and therefore, the application of a high voltage to the conduction switching element can be suppressed.
In the direct-current power supply device according to the above aspect, the current interrupting unit preferably includes a diode element connected in parallel to the series circuit and connected in series to the semiconductor switching element, and a total value of an on voltage of the diode element and an on voltage of the semiconductor switching element is larger than a total value of an on voltage of the series switching element and an on voltage of the conduction switching element. With this configuration, the current flowing through the series circuit of the diode element and the semiconductor switching element having a relatively large total value of the on-voltage can be made relatively small. As a result, the amount of heat generated by the diode element and the semiconductor switching element can be relatively small.
Further, since the conduction loss of each of the series switching element and the conduction switching element is smaller than the conduction loss of the semiconductor switching element, the on-resistance of each of the series switching element and the conduction switching element is relatively small compared to the on-resistance of the semiconductor switching element. Therefore, by passing a relatively large current to the series switching element and the conduction switching element having relatively small on-resistance compared to the current flowing through the series circuit of the diode element and the semiconductor switching element, an increase in the amount of heat generated by the series switching element and the conduction switching element can be suppressed as much as possible. This can suppress an increase in the amount of heat generated by the entire current blocking portion.
In the dc power supply device according to the above aspect, preferably, the dc power supply device further includes a power storage unit that stores dc power converted by the rectifier, and the control unit is configured to: when supplying the dc power of the power storage unit to the load, the current interruption unit performs control for interrupting the current flowing from the power storage unit to the load by performing control for interrupting the series-connection switching element and control for interrupting the conduction switching element at the same time, and then performing control for interrupting the semiconductor switching element, or performing control for interrupting the series-connection switching element, the conduction switching element, and the semiconductor switching element in this order. With this configuration, it is possible to suppress an increase in conduction loss at the time of current conduction and to suppress breakdown of the element in the current interrupting portion.
In the direct-current power supply device according to the above aspect, the series switching element, the conduction switching element, and the semiconductor switching element preferably include a thyristor, a MOSFET, and an IGBT, respectively. With this configuration, since the on-voltage of the thyristor is relatively low, by using the thyristor as the series switching element, it is possible to effectively suppress an increase in conduction loss at the time of current conduction (at the time of normal operation of the dc power supply device). Further, since the IGBT switches at a higher speed and has a high withstand voltage, the use of the IGBT as the semiconductor switching element can cut off the current at a high speed, and can suppress the breakdown of the semiconductor switching element even when the semiconductor switching element receives a high voltage (rated voltage). Further, since the MOSFET has a relatively low conduction loss, the use of the MOSFET as the conduction switching element can more effectively suppress an increase in conduction loss at the time of current conduction (at the time of normal operation of the dc power supply device). Further, since the MOSFET switches at a relatively high speed, a current flowing through a dc circuit including the series switching element and the on switching element can be relatively quickly diverted to the semiconductor switching element side at the time of current interruption. As a result, the time required for the current interrupting unit to interrupt the current can be shortened.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, as described above, it is possible to cut off the fault current at a high speed while suppressing an increase in conduction loss, and to miniaturize the dc power supply device.
Drawings
Fig. 1 is a diagram showing a configuration of a dc power supply device according to an embodiment.
Fig. 2 is a diagram showing gate signals and current values of respective elements in the current interrupting unit according to the embodiment.
Fig. 3 is a diagram showing the flow of current in the current interrupting unit according to one embodiment when the IGBT is turned on and the on control is started (period a).
Fig. 4 is a diagram showing the flow of current when the thyristor and the MOSFET are turned on (period B) when conducting in the current interrupting unit according to the embodiment.
Fig. 5 is a diagram showing the flow of current when the thyristor and the MOSFET are turned off and the control of current interruption is started (period C) in the current interruption unit according to the embodiment.
Fig. 6 is a diagram showing a state of the current interruption unit when the IGBT is turned off and the current interruption control is completed (period D) according to one embodiment.
Detailed Description
Hereinafter, embodiments embodying the present invention will be described based on the drawings.
[ present embodiment ]
The configuration of the dc power supply device 100 according to the present embodiment will be described with reference to fig. 1 to 6.
(Structure of DC Power supply device)
As shown in fig. 1, dc power supply device 100 includes a rectifier 1, a power storage unit 2, a current sensor 3, a current blocking unit 4, a control unit 5, a drive unit 6, and a voltage sensor 7. The dc power supply device 100 is used in a solar power generation system, for example.
The rectifier 1 is configured to convert an ac input voltage input from an external system 101 into a dc voltage. An ac breaker 102 for switching between on and off of a current between the system 101 and the dc power supply apparatus 100 is provided outside the dc power supply apparatus 100. The system 101 is an example of the "ac voltage source" in the present invention.
The power storage unit 2 is configured to store the dc power converted by the rectifier 1. When electric power is not supplied from system 101 (at the time of power failure or the like), power storage unit 2 supplies electric power as a power source to load 103.
Current interrupting unit 4 is configured to electrically connect and electrically disconnect rectifier 1 (power storage unit 2) and load 103. Specifically, the current interruption unit 4 includes a thyristor 40 and a self-extinguishing MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) 41 connected in series to the thyristor 40. The MOSFET41 is connected in series with the thyristor 40 on the load 103 side with respect to the thyristor 40. The thyristor 40 and the MOSFET41 are examples of the "series switching element" and the "on switching element" in the present invention, respectively.
Current interrupting unit 4 includes a diode element 42 and a self-extinguishing IGBT (Insulated Gate Bipolar Transistor) 43. The IGBT43 is connected in series with the diode element 42 on the load 103 side with respect to the diode element 42. As the IGBT43, an RB (Reverse Blocking) -IGBT and an RC (Reverse Conducting) -IGBT can be used. The IGBT43 is an example of the "semiconductor switching element" in the present invention.
In addition, a series circuit of the thyristor 40 and the MOSFET41 and a series circuit of the diode element 42 and the IGBT43 are connected in parallel.
The thyristor 40 has a withstand voltage (for example, 1600V) higher than a rated voltage (for example, 750V) of a dc voltage used in the dc power supply device 100. The withstand voltage (for example, 10V to 20V) of the MOSFET41 is smaller than the rated voltage. The IGBT43 has a withstand voltage (for example, 1600V) higher than the rated voltage.
The conduction loss of each of the thyristor 40 and the MOSFET41 is smaller than the conduction loss of the IGBT43 (when a current of the same magnitude as that of the thyristor 40 and the MOSFET41 flows). The MOSFET41 and the IGBT43 are each configured to be capable of switching at a higher speed than the thyristor 40. The MOSFET41 is configured to be capable of switching at a higher speed than the IGBT 43.
The current interruption unit 4 interrupts current by a relatively small number of elements (four elements, i.e., the thyristor 40, the MOSFET41, the diode element 42, and the IGBT 43). In contrast, for example, in a configuration in which a canceling current is caused to flow to a switch by a discharge current from a capacitor, a relatively large number of elements (components) such as a resistance element, a reactor, a thyristor, and a diode are required in addition to the switch and the capacitor. Therefore, by constituting the current interrupting unit 4 with a relatively small number of elements, it is possible to suppress an increase in the failure rate of the current interrupting unit 4 (suppress a decrease in reliability).
The control unit 5 is configured to control the rectifier 1 and the current interrupting unit 4. Specifically, the control unit 5 controls the operation of the rectifier 1 by transmitting a gate signal to a switching element, not shown, provided in the rectifier 1. The control unit 5 is configured to transmit a command signal for controlling the current interrupting unit 4 to the driving unit 6.
Specifically, the driving unit 6 is configured to transmit a gate signal for turning on or off the thyristor 40, the MOSFET41, and the IGBT43 of the current interrupting unit 4 based on a command signal from the control unit 5.
Further, the voltage sensor 7 is configured to detect an output voltage of the current interrupting unit 4 (a voltage between the current interrupting unit 4 and the load 103).
(operation of DC Power supply device)
Next, the operation of the dc power supply device 100 will be described with reference to fig. 2 to 6.
First, a case will be described in which the rectifier 1 is started to operate and power is supplied to the load 103 when the dc power supply device 100 is started.
As shown in fig. 2 (a), the IGBT43 is turned on (turned on) by transmitting a gate signal to the IGBT 43. As shown in fig. 3, in a period I (see fig. 2) from when the gate signal is transmitted to the IGBT43 to when the gate signal is transmitted to the MOSFET41 and the thyristor 40, the current from the rectifier 1 (see the broken line in fig. 3) flows through the diode element 42 and the IGBT43 to the load 103 side. As shown in fig. 2 (d) and (f), when the IGBT43 is turned on, the value of the output current of the current interrupting unit 4 (see fig. 2 (d)) and the value of the current flowing through the IGBT43 (see fig. 2 (f)) increase to predetermined magnitudes, respectively.
In the present embodiment, as shown in fig. 2 (b) and (c), the control unit 5 is configured to perform control to turn on the thyristor 40 and the MOSFET41 after performing control to turn on the IGBT43, thereby performing control to turn on the current interrupting unit 4.
Here, the output voltage of the current interrupting unit 4 increases as the IGBT43 is turned on. In the present embodiment, the control unit 5 is configured to perform control to turn on the current interrupting unit 4 by performing control to turn on the thyristor 40 and the MOSFET41 after the increase of the output voltage of the current interrupting unit 4 is stopped.
Specifically, when the voltage value detected by the voltage sensor 7 rises to a predetermined maximum voltage, a signal is transmitted from the voltage sensor 7 to the control unit 5. Upon receiving the signal from the voltage sensor 7, the control unit 5 supplies the drive unit 6 with a command signal to transmit a gate signal for turning on the thyristor 40 and the MOSFET 41. Thereby, the period B of fig. 2 starts.
In detail, the thyristor 40 and the MOSFET41 are turned on by sending gate signals to the thyristor 40 and the MOSFET 41. As shown in fig. 4, in the period B (see fig. 2), the current from the rectifier 1 (see the broken line in fig. 4) is branched to flow to the load 103 side so as to flow to the series circuit of the diode element 42 and the IGBT43 and the series circuit of the thyristor 40 and the MOSFET 41.
As shown in fig. 2 (e), since the thyristor 40 is turned on, the value of the current flowing through the thyristor 40 increases to a prescribed magnitude. In addition, since the current that originally flows only to the series circuit side of the diode element 42 and the IGBT43 in the period I also flows to the series circuit side of the thyristor 40 and the MOSFET41 in the period B, the value of the current that flows through the IGBT43 in the period B is smaller than the value of the current in the period I.
Here, in the present embodiment, the turn-on voltage (forward voltage) V of the diode element 42FThe total value of the on voltage Vce of the IGBT43 (collector-emitter saturation voltage) is larger than the on voltage Vth of the thyristor 40 (forward voltage) and the on voltage V of the MOSFET41 (drain-source voltage)DSThe total value of (2) is large. Specifically, it is (V)F+Vce)＞＞(Vth+VDS) The relationship (2) of (c). The ratio of the value of the current flowing through the series circuit of the thyristor 40 and the MOSFET41 to the value of the current flowing through the series circuit of the diode element 42 and the IGBT43 is determined by the on-voltage of the above four elements. By setting the total value of the on-voltage to the above-described relationship, the value of the current flowing through the series circuit of the thyristor 40 and the MOSFET41 is made larger than the value of the current flowing through the series circuit of the diode element 42 and the IGBT 43. The value of the current flowing through the series circuit of the thyristor 40 and the MOSFET41 is, for example, about 20 times the value of the current flowing through the series circuit of the diode element 42 and the IGBT 43.
Accordingly, a relatively small current flows through the diode element 42 and the IGBT43, and therefore the heat generation amounts of the diode element 42 and the IGBT43 can be made relatively small. Further, by disposing an element having low resistance between the drain and the source as the MOSFET41, the amount of heat generated by the MOSFET41 can be reduced. Thereby, the amount of heat generation other than the thyristor 40 can be reduced. As a result, a heat sink (not shown) for dissipating heat from current blocking unit 4 can be designed in consideration of only the amount of heat generated by thyristor 40 (in consideration of the amounts of heat generated by MOSFET41, IGBT43, and diode element 42), and the heat sink can be made smaller.
Next, the operation of the dc power supply device 100 when the power supply to the load 103 is stopped will be described.
First, when the current value detected by the current sensor 3 exceeds a predetermined range, a signal is transmitted from the current sensor 3 to the control unit 5. Then, the control unit 5 notified of the signal transmits a command signal for shutting off the current shut-off unit 4 to the drive unit 6. The following specifically explains the process.
In the present embodiment, as shown in fig. 2 (a) to (c), the control unit 5 is configured to perform control for turning off the IGBT43 after simultaneously performing control for turning off (turning off) the thyristor 40 and control for turning off the MOSFET 41. Specifically, a gate signal for turning off the thyristor 40 and the MOSFET41 is simultaneously transmitted to the thyristor 40 and the MOSFET 41. Thereby, the period C starts. After that, a gate signal for turning off the IGBT43 is transmitted to the IGBT43, and the period C ends.
As a result, as shown in (d) to (f) of fig. 2, the value of the current flowing through the thyristor 40 in the period C is reduced compared with the value of the current flowing through the thyristor 40 in the period B (see (e) of fig. 2). The value of the current flowing through the IGBT43 in the period C is increased compared to the value of the current flowing through the IGBT43 in the period B (see fig. 2 (f)). This is because, as shown in fig. 5, since the MOSFET41 is turned off, no current flows through the series circuit of the thyristor 40 and the MOSFET41, and thus the current that originally flows through the thyristor 40 and the MOSFET41 in the period B (see fig. 4) flows to the IGBT43 side in the period C. Further, since the IGBT43 is in the energized state when the MOSFET41 is turned off, the MOSFET41 does not receive a high voltage (rated voltage).
In addition, although the thyristor 40 has a characteristic of continuing the on state as long as a current (holding current) flows even if the gate is turned off, since the current flowing through the thyristor 40 is diverted to the IGBT43 side by turning off the MOSFET41, the current flowing through the thyristor 40 is zero and the thyristor 40 is in the off state. Thus, the thyristor 40 can be turned off without providing a circuit for forcibly turning off the thyristor 40 by, for example, flowing a canceling current to the thyristor 40.
In the present embodiment, the control unit 5 is configured to: by performing the control of turning off the MOSFET41, the current flowing through the series circuit of the thyristor 40 and the MOSFET41 is diverted to the IGBT43 side, and thus no current flows through the thyristor 40, and thereafter, the control of turning off the IGBT43 is performed, thereby performing the control of turning off the current interrupting unit 4. Specifically, the control unit 5 is configured to perform control to turn off the IGBT43 after the value of the current flowing through the thyristor 40 becomes zero.
Specifically, as shown in fig. 2, the control unit 5 is configured to: after a time t equal to or longer than the off time of the thyristor 40 has elapsed since the control to turn off the MOSFET41, the control to turn off the IGBT43 is performed, thereby performing the control to turn off the current interrupting unit 4. Specifically, after a lapse of time t from the transmission of the gate off signals to the MOSFET41 and the thyristor 40, respectively, the gate off signal is transmitted to the IGBT 43. When the off time of the thyristor 40 is, for example, 0.5ms to 1ms, the time t is preferably about 2 times the off time of the thyristor 40, that is, about 1ms to 2 ms.
As shown in fig. 6, during a period D after the IGBT43 is turned off, no current flows through the IGBT 43. As shown in fig. 2 (D) to (f), in the period D, the output current of the current interrupting unit 4 (see fig. 2 (D)), the current flowing through the thyristor 40 (see fig. 2 (e)), and the current flowing through the IGBT43 (see fig. 2 (f)) are zero, respectively. This completes the control of current interruption by the current interruption unit 4. When the IGBT43 is turned off, the IGBT43 and the thyristor 40 each receive a rated voltage, while the MOSFET41 receives almost no voltage.
When power is not supplied from system 101, for example, at the time of a power failure, dc power of power storage unit 2 is supplied to load 103. In this case, control unit 5 is configured to perform control for turning on and off the current flowing from power storage unit 2 by current interruption unit 4. The control method for turning on and off the current from power storage unit 2 is the same as the above-described method for turning on and off the current from rectifier 1 (see fig. 2), and therefore, a detailed description thereof is omitted.
Further, since the current flowing through the current interrupting unit 4 is interrupted by turning off the IGBT43 as a semiconductor switching element, unlike the case where the current is interrupted only by a mechanical switch, no arc is generated. Therefore, it is not necessary to provide a separate structure for forcibly extinguishing the arc, and the current can be cut off at high speed.
In addition, when a mechanical switch is used, the dc arc extinguishing is generally more difficult than the ac arc extinguishing, and therefore, the switches that can be selected are limited. Therefore, by interrupting the current using the IGBT43 as the semiconductor switching element, the problem that the selection range of the element (switch) is limited can be solved.
Unlike the case where the on state continues for a certain time due to the arc generated by the mechanical switch, it is not necessary to provide a fuse member or the like for overcurrent protection. This makes it possible to save labor and time for, for example, replacement work performed when fuse members and the like deteriorate year by year.
[ Effect of the present embodiment ]
In the present embodiment, the following effects can be obtained.
In the present embodiment, as described above, the current blocking unit 4 includes: a series circuit including a thyristor 40 having a withstand voltage larger than a rated voltage of a dc voltage and a self-extinguishing MOSFET41 having a withstand voltage smaller than the rated voltage, the MOSFET41 being connected in series with the thyristor 40 on a load 103 side; and a self-extinguishing IGBT43 having a withstand voltage larger than the rated voltage, which is connected in parallel with the series circuit. In addition, the conduction loss of each of the thyristor 40 and the MOSFET41 is smaller than the conduction loss of the IGBT 43. Further, the dc power supply device 100 is configured as follows: the control unit 5 performs control to turn off the IGBT43 after performing control to turn off the thyristor 40 and control to turn off the MOSFET41 at the same time.
Thus, since the current flowing through the thyristor 40 and the MOSFET41 flows to the IGBT43, the IGBT43 can be turned off in a state where all the current flows to the IGBT 43. Here, since the IGBT43 does not generate an arc when turned off, it is not necessary to use the charging energy of the capacitor to flow the superimposed current to the IGBT43 in order to turn off the IGBT43 at high speed. Therefore, by performing the control as described above, the fault current can be cut off at a high speed by the IGBT43 without using a capacitor. This makes it possible to cut off the fault current at high speed and to reduce the size of the dc power supply device 100.
Further, by connecting the series circuit of the thyristor 40 and the MOSFET41, which has a smaller conduction loss than the IGBT43, in parallel with the IGBT43, it is possible to cause at least a part of the current to flow also on the side of the series circuit having a smaller conduction loss, unlike the case where only the IGBT43 is provided. As a result, conduction loss (power consumption) can be suppressed as compared with the case where only the IGBT43 is provided. As a result, the increase in conduction loss can be suppressed, and the fault current can be cut off at high speed, and the dc power supply device 100 can be downsized.
In addition, by diverting the current flowing through the thyristor 40 and the MOSFET41 to the IGBT43, the IGBT43 can be turned off in a state where no current flows through the thyristor 40 and the MOSFET 41. Thus, when the IGBT43 is turned off, the IGBT43 and the thyristor 40 receive the rated voltage of the dc power supply device 100, while the thyristor 40 provided at the previous stage of the MOSFET41 is turned off, so that the voltage received by the MOSFET41 is substantially zero. As a result, it is possible to prevent the MOSFET41 from receiving a voltage (rated voltage) equal to or higher than the withstand voltage, and thus it is possible to prevent the MOSFET41 from being broken. Further, since the withstand voltage of each of the thyristor 40 and the MOSFET41 is equal to or higher than the rated voltage, neither the thyristor 40 nor the MOSFET41 is destroyed. This can suppress the breakdown of the element of the current interrupting unit 4(MOSFET 41).
Here, when there is a time difference between the control for turning off the thyristor 40 and the control for turning off the MOSFET41, the control for turning off the IGBT43 is delayed in accordance with the time difference, and therefore the time for flowing the current to the IGBT43 increases. By simultaneously performing the control of turning off the thyristor 40 and the control of turning off the MOSFET41, it is possible to suppress the delay in the control of turning off the IGBT43 and to suppress the increase in the time for which the current flows to the IGBT 43. Here, the size of the IGBT43 depends on the energizable time. Therefore, by suppressing the time for which the current flows to the IGBT43 from increasing, the IGBT43 can be suppressed from increasing in size.
In the present embodiment, as described above, the dc power supply device 100 is configured as follows: the control unit 5 performs control of cutting off the current cutting unit 4 as follows: the turning-off of the MOSFET41 is controlled so that the current flowing through the series circuit of the thyristor 40 and the MOSFET41 flows to the IGBT43 side, and the IGBT43 is controlled so as to turn off after the current no longer flows through the thyristor 40. This can prevent the IGBT43 from being turned off while a current is still flowing in the series circuit of the thyristor 40 and the MOSFET 41. As a result, the thyristor 40 can be reliably turned off when the IGBT43 is turned off. As a result, the MOSFET41 can be more reliably prevented from receiving a high voltage (rated voltage).
In the present embodiment, as described above, the dc power supply device 100 is configured as follows: after a time t equal to or longer than the off time of the thyristor 40 has elapsed since the control to turn off the MOSFET41, the control unit 5 performs control to turn off the IGBT43, thereby performing control to turn off the current interruption unit 4. This makes it possible to more reliably perform control for turning off the IGBT43 after no current flows through the thyristor 40.
In the present embodiment, as described above, the dc power supply device 100 is configured as follows: after performing control to turn on the IGBT43, the control unit 5 performs control to turn on the thyristor 40 and the MOSFET41, thereby performing control to turn on the current interruption unit 4. This can suppress the thyristor 40 and the MOSFET41 from being turned on while the IGBT43 is off, and thus can suppress the MOSFET41 from being applied with a high voltage (the rated voltage of the dc power supply device 100).
In the present embodiment, as described above, the control unit 5 is configured to: after the IGBT43 is turned on to increase the output voltage of the current interrupting unit 4 and the increase of the output voltage is stopped, the thyristor 40 and the MOSFET41 are controlled to be turned on, thereby controlling the current interrupting unit 4 to be turned on. Here, the voltage received by the IGBT43 decreases in accordance with an increase in the output voltage of the current interrupting unit 4. Therefore, by performing control to turn on the thyristor 40 and the MOSFET41 after the increase of the output voltage of the current interrupting unit 4 is stopped, the thyristor 40 and the MOSFET41 can be turned on after the voltage received by the IGBT43 becomes minimum. As a result, the MOSFET41 connected in parallel with the IGBT43 also receives a voltage having the same magnitude as the voltage received by the IGBT43, and therefore, the MOSFET41 can be prevented from being applied with a high voltage.
In the present embodiment, as described above, the dc power supply device 100 is configured as follows: turn-on voltage V of diode element 42FThe ratio of the total value of the on-voltage Vce of the IGBT43 to the on-voltage Vth of the thyristor 40 and the on-voltage V of the MOSFET41DSThe total value of (2) is large. This makes it possible to reduce the current flowing through the series circuit of the diode element 42 and the IGBT43, which has a relatively large total value of the on-voltage. As a result, the amount of heat generated by the diode element 42 and the IGBT43 can be made relatively small.
Since the on-loss of each of the thyristor 40 and the MOSFET41 is smaller than the on-loss of the IGBT43, the on-resistance of each of the thyristor 40 and the MOSFET41 is smaller than the on-resistance of the IGBT 43. Therefore, by flowing a relatively large current to the thyristor 40 and the MOSFET41 having relatively small on-resistances as compared with the current flowing through the series circuit of the diode element 42 and the IGBT43, an increase in the amount of heat generation of the thyristor 40 and the MOSFET41 can be suppressed as much as possible. This can suppress an increase in the amount of heat generated by the entire current blocking unit 4.
In the present embodiment, as described above, the dc power supply device 100 is configured as follows: when supplying the dc power of power storage unit 2 to load 103, control unit 5 performs control to turn off IGBT43 after performing control to turn off thyristor 40 and control to turn off MOSFET41 at the same time. This can suppress an increase in conduction loss at the time of current conduction and can suppress breakdown of the element of the current interrupting unit 4.
In the present embodiment, as described above, the dc power supply device 100 is configured as follows: the elements of the current interrupting unit 4 include a thyristor 40, a MOSFET41, and an IGBT 43. Thus, since the on-voltage of the thyristor is relatively low, by using the thyristor 40 as the thyristor 40, it is possible to effectively suppress an increase in conduction loss at the time of current conduction (at the time of normal operation of the dc power supply device 100). Further, since the IGBT is switched at a higher speed and has a high withstand voltage, by using the IGBT43 as the IGBT43, it is possible to perform current interruption at a high speed and to suppress the IGBT43 from being broken even when the IGBT43 receives a high voltage (rated voltage). Further, since the MOSFET has a relatively low conduction loss, by using the MOSFET41 as the MOSFET41, an increase in the conduction loss at the time of current conduction (at the time of normal operation of the dc power supply device) can be more effectively suppressed. Further, since the MOSFET is switched at a relatively high speed, the current flowing through the dc circuit of the thyristor 40 and the MOSFET41 can be relatively quickly diverted to the IGBT43 side at the time of current interruption. As a result, the time required for the current interrupting unit 4 to interrupt the current can be shortened.
[ modified examples ]
Furthermore, the embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is shown by the claims without going through the description of the above embodiments, and the scope of the present invention also includes all modifications (variations) within the meaning and scope equivalent to the claims.
For example, in the above-described embodiment, the example in which the control to turn off the thyristor 40 (series switching element) and the control to turn off the MOSFET41 (on switching element) are simultaneously performed and then the control to turn off the IGBT43 (semiconductor switching element) is performed has been described, but the present invention is not limited to this. For example, the control unit 5 may perform control for turning off the current interrupting unit 4 by performing control for turning off the thyristor 40, the MOSFET41, and the IGBT43 in this order. When the load 103 is supplied with electric power from the power storage unit 2, the thyristor 40, the MOSFET41, and the IGBT43 may be controlled to be turned off in this order.
In addition, in the above-described embodiment, the example in which the thyristor 40 is provided as the switching element is shown, but the present invention is not limited thereto. For example, a mechanical switch may be provided instead of the thyristor 40. In this case, the current can be easily set to zero by turning off the MOSFET41 and switching the current, and therefore, the occurrence of arcing in the mechanical switch when the mechanical switch is turned off can be suppressed. As a result, even when a mechanical switch is used, the time required for current interruption can be suppressed from increasing. In addition, a bipolar transistor may be provided instead of the thyristor 40. Further, the case where the mechanical switch is selected instead of the thyristor 40 can further reduce the power consumption.
In the above-described embodiment, the control unit 5 performs control to turn on the thyristor 40 (series switching element) and the MOSFET41 (on switching element) after the increase of the output voltage of the current interrupting unit 4 is stopped, but the present invention is not limited to this. For example, the control unit 5 may perform control to turn on the thyristor 40 and the MOSFET41 when the output voltage is greater than a predetermined threshold value while the output voltage is increasing.
In addition, in the above-described embodiment, the example in which the MOSFET41 is provided as the on switching element is shown, but the present invention is not limited thereto. For example, a mechanical switch may be provided instead of the MOSFET 41.
In the above embodiment, the example in which the IGBT43 is provided as the switching element is shown, but the present invention is not limited to this. For example, a SiC-MOSFET may be provided instead of the IGBT 43.
Description of the reference numerals
1: a rectifier; 2: an electric storage unit; 4: a current cutoff section; 5: a control unit; 40: a thyristor (switching element for series connection); 41: MOSFET (on switching element); 42: a diode element; 43: an IGBT (semiconductor switching element); 100: a direct current power supply device; 101: system (ac voltage source); 103: a load; t: time (specified time); vce: the turn-on voltage (turn-on voltage of the semiconductor switching element); vDS: the on voltage (the on voltage at which the switching element is turned on); vF: the turn-on voltage (turn-on voltage of the diode element); vth: on-voltage (switching element)Turn-on voltage of).
Claims (9)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2019128219 | 2019-07-10 | ||
| JP2019-128219 | 2019-07-10 | ||
| PCT/JP2020/027063 WO2021006340A1 (en) | 2019-07-10 | 2020-07-10 | Dc power supply device |
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| CN113261188A true CN113261188A (en) | 2021-08-13 |
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| CN202080007763.2A Pending CN113261188A (en) | 2019-07-10 | 2020-07-10 | DC power supply device |
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| JP (1) | JP7226551B2 (en) |
| KR (1) | KR102609928B1 (en) |
| CN (1) | CN113261188A (en) |
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| KR102758674B1 (en) * | 2022-11-17 | 2025-01-22 | 국립목포대학교산학협력단 | Inverter capable of interrupting dc-link fault current |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201206003A (en) * | 2010-07-22 | 2012-02-01 | Eneraiser Technology Co Ltd | Abnormal-voltage protection circuit of DC power supply equipments |
| CN105190472A (en) * | 2013-02-19 | 2015-12-23 | 易达有限公司 | Power supply system module |
| WO2016199497A1 (en) * | 2015-06-11 | 2016-12-15 | 富士電機株式会社 | Power conversion device |
| CN106688183A (en) * | 2014-09-11 | 2017-05-17 | 三菱电机株式会社 | Short-circuit protection circuit for self-arc-extinguishing semiconductor components |
| CN109950866A (en) * | 2017-12-20 | 2019-06-28 | 富士电机株式会社 | Current interrupter |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6953885B2 (en) | 2017-08-10 | 2021-10-27 | 富士電機株式会社 | Power supply and cutoff switch circuit |
| JP7180157B2 (en) * | 2018-07-13 | 2022-11-30 | 富士電機株式会社 | bidirectional switch circuit |
| JP7115127B2 (en) * | 2018-08-06 | 2022-08-09 | 富士電機株式会社 | switch device |
-
2020
- 2020-07-10 JP JP2021530739A patent/JP7226551B2/en active Active
- 2020-07-10 WO PCT/JP2020/027063 patent/WO2021006340A1/en active Application Filing
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201206003A (en) * | 2010-07-22 | 2012-02-01 | Eneraiser Technology Co Ltd | Abnormal-voltage protection circuit of DC power supply equipments |
| CN105190472A (en) * | 2013-02-19 | 2015-12-23 | 易达有限公司 | Power supply system module |
| CN106688183A (en) * | 2014-09-11 | 2017-05-17 | 三菱电机株式会社 | Short-circuit protection circuit for self-arc-extinguishing semiconductor components |
| WO2016199497A1 (en) * | 2015-06-11 | 2016-12-15 | 富士電機株式会社 | Power conversion device |
| CN109950866A (en) * | 2017-12-20 | 2019-06-28 | 富士电机株式会社 | Current interrupter |
Non-Patent Citations (1)
| Title |
|---|
| 郑春霞等: "辅助电源装置放电电路故障分析与处理", 《中国铁路》, no. 1, 15 January 2015 (2015-01-15), pages 84 - 86 * |
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| WO2021006340A1 (en) | 2021-01-14 |
| JPWO2021006340A1 (en) | 2021-12-02 |
| JP7226551B2 (en) | 2023-02-21 |
| KR102609928B1 (en) | 2023-12-04 |
| KR20210092826A (en) | 2021-07-26 |
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