Tunable single-frequency Raman laser
Technical Field
The invention relates to the field of lasers, in particular to a tunable single-frequency Raman laser.
Background
Due to the characteristics of ultra-narrow spectral line width, ultra-long coherent length, low noise and the like, the single-frequency laser has important application value in the fields of optical fiber sensing, coherent laser radar, high-power coherent synthesis, coherent optical communication, optical atomic clocks, gravitational wave detection and the like. However, the direct lasing wavelength range of the single-frequency fiber laser based on the ytterbium-doped, erbium-doped or thulium-doped ion gain fiber is limited, the currently covered wavelength range is mainly concentrated in the wave bands of 0.98-1.12 μm, 1.53-1.6 μm and 1.75-2 μm, and the single-frequency fiber laser except the wave band is difficult to directly obtain through the conventional gain fiber.
As an important branch of the optical frequency conversion technology, stimulated Raman scattering belongs to a third-order nonlinear effect. Principle on raman scattering: raman scattering is a process of inelastic light scattering, in which incident photons interact with molecules through the inelastic scattering process, thereby changing the energy and generating photons with different wavelengths. Therefore, the laser wave band can be effectively expanded through the stimulated Raman scattering, and special wavelength laser output which cannot be directly obtained through the conventional gain fiber is obtained.
At present, the raman laser is mainly realized by a solid laser. In the solid laser, laser light is transmitted in space, so that the solid laser has poor stability and low power density. The fiber laser limits the laser to be generated and transmitted in the fiber waveguide, and the output power of the fiber laser can be further improved through the main oscillation power amplification system, so that high-power fundamental frequency light with good beam quality can be obtained. Therefore, the tunable range of the output Raman light can be greatly expanded by combining the high-power tunable single-frequency laser and the Raman effect.
In the prior art, a mode of combining a fundamental frequency resonant cavity and a Raman resonant cavity in cascade is adopted to realize single-frequency Raman laser; however, in the solid-state laser, the single-frequency fundamental frequency light output is obtained by using the filtering effect of the fabry-perot cavity, and the power density of the fundamental frequency light in the cavity is reduced, so that the raman conversion efficiency is low. Or, the fundamental frequency optical gain and the Raman gain are arranged in the same resonant cavity, and the fundamental frequency optical seed is injected to control the longitudinal mode and the narrow line width, so that the narrow line width single-frequency Raman laser output is realized; however, the output wavelength of this technique is only the common 1.0 μm band, and the output laser does not have the ability of wide-range tuning. Or, a near-infrared tunable laser pumping source is combined with the hollow-core optical fiber to obtain intermediate infrared Raman laser; however, the lowest transmission loss of the hollow-core optical fiber used in the technology in a 1.55 mu m wave band is 1.2dB/km, which is one order of magnitude higher than that of the common commercial solid optical fiber, and a coupling input/output space system is formed by using a large number of lens elements, so that the stability and the reliability are poor; in addition, the coupling loss of the system reaches 0.96dB, which is much higher than the loss of the common fiber fusion (typical value ≦ 0.02 dB).
Disclosure of Invention
To solve at least one of the technical problems in the prior art to a certain extent, the present invention provides a tunable single-frequency raman laser.
The technical scheme adopted by the invention is as follows:
a tunable single-frequency raman laser comprising:
the tunable single-frequency fiber laser seed source outputs tunable fundamental frequency light;
the optical fiber amplification system is used for carrying out power amplification on the fundamental frequency light and injecting the fundamental frequency light subjected to power amplification into the resonant cavity;
the resonant cavity comprises a Raman laser resonant system and a filtering frequency-selecting system;
a Raman laser resonance system including a first plano-concave mirror, a Raman gain crystal, a second plano-concave mirror, and a third plano-concave mirror for generating Raman light;
the filtering frequency-selecting system comprises an F-P etalon and a volume grating and is used for selecting and outputting single-frequency Raman light.
Furthermore, the first plano-concave mirror, the Raman gain crystal, the F-P etalon, the second plano-concave mirror, the volume grating and the third plano-concave mirror form an N-shaped cavity;
the fundamental frequency light output from the optical fiber amplification system sequentially passes through the plane of the first plano-concave mirror, the concave surface of the first plano-concave mirror, the Raman gain crystal, the F-P etalon and the concave surface of the second plano-concave mirror, and part of the light is emitted out of the plane of the second plano-concave mirror;
the other part of light is reflected to the volume grating by the concave surface of the second plano-concave mirror and is reflected to the concave surface of the third plano-concave mirror by the volume grating, and the concave surface of the third plano-concave mirror reflects the light rays according to the original path.
Further, the first plano-concave mirror is an input coupling mirror, and a dielectric layer with the transmittance of fundamental frequency light being more than 99% and the reflectivity of Raman light being more than 99% is plated on the first plano-concave mirror;
the second plano-concave mirror is a concave folding mirror, and a dielectric layer with the transmittance of 1-99% of fundamental frequency light is plated on the second plano-concave mirror;
the third concave mirror is a reflector, and a dielectric layer with a Raman light reflectivity of more than 99% is plated on the third concave mirror.
Further, the tunable single-frequency fiber laser seed source realizes wavelength tuning by any one of the following modes:
the wavelength tuning is realized by controlling the single-frequency solid laser in a mode of loading the temperature or stress of the resonant cavity; or the like, or, alternatively,
wavelength tuning is achieved by the tunable filter device in combination with the ring cavity and the single-frequency fiber laser of the composite cavity structure.
Further, the tunable single-frequency fiber laser seed source is a continuous or pulse single-frequency fiber laser, and the working waveband of the tunable single-frequency fiber laser seed source is 1.0 μm, 1.5 μm or 2.0 μm.
Further, the optical fiber amplification system comprises a multi-stage pre-amplification stage and a one-stage main amplification stage. The power amplification system generally comprises a pump source, a gain fiber, a coupling system or an optical isolator.
Further, the Raman gain crystal is any one of tungstate crystal, nitrate crystal, molybdate crystal or diamond crystal, and the using length of the Raman gain crystal is 0.5-100 mm.
Furthermore, the F-P etalon partially transmits Raman light, the transmissivity is 1-99%, and the thickness of the F-P etalon is 0.1-50 mm.
Further, the central wavelength of the volume grating in normal incidence is determined according to the wavelength of Raman light, the reflectivity of the Raman light of the volume grating in normal incidence is more than 99%, and the filtering bandwidth is less than 0.01 nm.
Further, the tunable single-frequency Raman laser further comprises an optical isolator, and the optical isolator is arranged between the tunable single-frequency fiber laser seed source and the fiber amplification system.
The invention has the beneficial effects that: the single-frequency fiber laser is used as a fundamental frequency light source, and stable guarantee is provided for a longitudinal mode of the single-frequency Raman laser; in addition, the single longitudinal mode output with tunable wavelength is obtained by means of the F-P etalon and the bulk grating, and the degree of freedom is high.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description is made on the drawings of the embodiments of the present invention or the related technical solutions in the prior art, and it should be understood that the drawings in the following description are only for convenience and clarity of describing some embodiments in the technical solutions of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a tunable single-frequency raman laser according to an embodiment of the present invention.
Reference numerals: the tunable single-frequency fiber laser seed source comprises a tunable single-frequency fiber laser seed source, a 2-optical isolator, a 3-fiber amplification system, a 4-first plano-concave mirror, a 5-Raman gain crystal, a 6-F-P etalon, a 7-second plano-concave mirror, a 8-volume grating and a 9-third plano-concave mirror.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. The step numbers in the following embodiments are provided only for convenience of illustration, the order between the steps is not limited at all, and the execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
As shown in fig. 1, the present embodiment provides a tunable single-frequency raman laser, including: the tunable single-frequency fiber laser seed source comprises a tunable single-frequency fiber laser seed source 1, an optical isolator 2, a fiber amplification system 3, a first plano-concave mirror 4, a Raman gain crystal 5, an F-P etalon 6, a second plano-concave mirror 7, a volume grating 8 and a third plano-concave mirror 9. The first plano-concave mirror 4, the Raman gain crystal 5, the second plano-concave mirror 7 and the third plano-concave mirror 9 form a Raman laser resonance system, and the F-P etalon 6 and the volume grating 8 form a filtering frequency-selecting system. The construction relationship of each component is as follows: the output end of the tunable single-frequency fiber laser seed source 1 is connected with the input end of the optical isolator 2, the output end of the optical isolator 2 is connected with the input end of the optical fiber amplification system 3, the output end of the optical fiber amplification system 3 is sequentially connected with the first plano-concave mirror 4, the Raman gain crystal 5, the F-P etalon 6, the second plano-concave mirror 7, the volume grating 8 and the third plano-concave mirror 9, and the generated single-frequency Raman laser is reflected by the third plano-concave mirror 9 and then is reflected to the second plano-concave mirror 7 through the volume grating 8 to be output. Fundamental frequency light and Raman light are output on the plane of the second plano-concave mirror 7, and the Raman light can be screened out through the angle of the emitted light.
In the embodiment, the tunable single-frequency fiber laser seed source is a continuous single-frequency fiber laser which realizes wavelength tuning by combining a tunable filter device with a ring cavity structure, and the tunable wavelength range is 1527-1563 nm. In this example, the optical fiber amplification system includes two pre-amplification stages and one main amplification stage, each stage of gain fiber selects erbium-ytterbium co-doped fiber, and can amplify the power of the fundamental frequency light with 1.5 μm waveband to 100W for output.
In the embodiment, the first plano-concave mirror is an input coupling mirror and is plated with a dielectric layer with 99.5% of transmittance of fundamental frequency light and 99.5% of Raman light reflectivity; the second plano-concave mirror is a concave folding mirror and is plated with a dielectric layer with 4% of transmittance to fundamental frequency light; the third concave mirror is a reflector and is plated with a dielectric layer with 99.5% of Raman light reflectivity.
In this embodiment, the Raman gain crystal is tungstate BaWO4Crystals with a frequency shift of 926cm-1The length of the used material is 5 mm.
In this embodiment, the F-P etalon is plated with a dielectric layer having a transmittance of 60% for raman light, and the thickness thereof is 5 mm. The center wavelength at normal incidence of the volume grating in this example was 2.2 μm, the raman light reflectance at normal incidence was 99%, and the filter bandwidth was 0.008 nm.
Injecting high-power tunable fundamental frequency light passing through the optical fiber amplification system into the Raman laser resonance system, enabling the generated first-order Raman light to resonate for multiple times in the cavity to form a high-power optical field, and enabling the first-order Raman light to generate a Raman effect again to generate second-order Raman light along with the gradual enhancement of energy density. When high-power 1527nm fundamental frequency light is injected into the Raman resonant cavity, the first-order Raman light is 1778.5nm, and the second-order Raman light is 2129.1 nm; when 1563nm high-power fundamental frequency light is injected into the Raman resonant cavity, the first-order Raman light is 1827.5nm, and the second-order Raman light is 2199.8 nm. That is, the fundamental frequency light having a tuning range of 36nm (1527 to 1563nm) is shifted by the Raman crystal to generate first order Raman light having a tuning range of 49nm (1778.5 to 1827.5nm) and second order Raman light having a tuning range of 70.7nm (2129.1 to 2199.8 nm). The F-P etalon in the resonance system is used as a wavelength selective device, and the temperature is adjusted to ensure that the transmission peak of the F-P etalon coincides with the gain peak of the Raman gain crystal so as to obtain stable single longitudinal mode output. Meanwhile, the angle between the incident light and the volume grating is rotationally adjusted within an angle adjusting range of 37 degrees, so that Raman laser can be selectively filtered out within 1778.5-1827.5 nm and 2129.1-2199.8 nm wave bands, and single-frequency Raman laser output with high conversion efficiency and a wide tuning range is finally obtained.
In summary, the laser of the present embodiment has the following beneficial effects compared with the prior art:
1) compared with the scheme combining a general solid laser and Raman gain, the single-frequency fiber laser is used as the fundamental frequency light source, and the advantages of good beam quality, high reliability, simple device and the like of the single-frequency fiber laser are utilized to provide reliable guarantee for the stability of the longitudinal mode of the single-frequency Raman laser.
2) In the embodiment, a tunable single-frequency fiber laser is used as fundamental frequency light, the wavelength is selected in a 1.0/1.5/2.0 μm wave band, and the tunable single-frequency fiber laser has higher degree of freedom according to application requirements; the stable single longitudinal mode output is obtained by means of the F-P etalon and the volume grating, and the advantage of wavelength tuning is achieved.
3) In the embodiment, the laser resonant cavity adopts an N-shaped cavity structure, so that the flexibility expansibility of the scheme is increased, the structure is simple, and the operation is convenient.
In the foregoing description of the specification, reference to the description of "one embodiment/example," "another embodiment/example," or "certain embodiments/examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.