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CN113223976B - Microscopic test piece preparation method, device and recording medium - Google Patents

Microscopic test piece preparation method, device and recording medium Download PDF

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CN113223976B
CN113223976B CN202010072192.2A CN202010072192A CN113223976B CN 113223976 B CN113223976 B CN 113223976B CN 202010072192 A CN202010072192 A CN 202010072192A CN 113223976 B CN113223976 B CN 113223976B
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sample
target sample
test
cutting
target
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CN113223976A (en
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洪世玮
杜家玮
李正中
郭彦良
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2202Preparing specimens therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Immunology (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

本公开提供一种显微试片制备方法、装置及记录介质。此方法包括下列步骤:辨识一测试影像中的多个测试样本,并根据辨识结果从测试样本中挑选目标样本;将目标样本移载至样本支柱,并获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点;以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以切削目标样本。

The present invention provides a method, device and recording medium for preparing a microscopic specimen. The method includes the following steps: identifying a plurality of test samples in a test image, and selecting a target sample from the test samples according to the identification result; transferring the target sample to a sample support, and obtaining a top view of the transferred target sample to identify the center point of the target sample in the top view; and moving the position of a mask used for cutting the target sample according to the displacement between the center point and the cutting pattern of the target sample to cut the target sample.

Description

显微试片制备方法、装置及记录介质Microscopic specimen preparation method, device and recording medium

技术领域Technical Field

本公开的实施例是有关于一种显微试片制备方法、装置及记录介质。The embodiments of the present disclosure are related to a method, device and recording medium for preparing a microscopic specimen.

背景技术Background Art

在半导体制程中,需要针对半导体组件的表面微污染、掺杂与离子植入等,进行特定元素(例如磷、砷、硼等)浓度的量化分析,从而控制或调整制程参数,藉此维持组件/外延的稳定性。例如,在磷化硅的外延(epitaxy)过程中,即需要对磷进行量化分析(quantification)。In the semiconductor manufacturing process, it is necessary to quantitatively analyze the concentration of specific elements (such as phosphorus, arsenic, boron, etc.) for surface micro-contamination, doping and ion implantation of semiconductor components, so as to control or adjust process parameters and maintain the stability of components/epitaxial growth. For example, in the epitaxy process of silicon phosphide, it is necessary to quantify phosphorus.

现今的量化分析技术包括原子探针分析(Atom Probe Tomography,APT)、穿透式电子显微镜(Transmission electron microscope,TEM)等,但其在制备分析用的显微试片时,需要由测试人员根据经验选择样本,且在切削样本时,也需由测试人员肉眼辨识影像以调整切削用的电子束掩模。Current quantitative analysis techniques include atom probe tomography (APT) and transmission electron microscope (TEM). However, when preparing microscopic specimens for analysis, test personnel need to select samples based on experience, and when cutting samples, test personnel also need to identify images with the naked eye to adjust the electron beam mask used for cutting.

发明内容Summary of the invention

本公开的实施例提供一种显微试片制备方法,适用于具有处理器的电子装置。此方法包括下列步骤:辨识一测试影像中的多个测试样本,并根据辨识结果从测试样本中挑选一个目标样本;将目标样本移载至样本支柱,并获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点;以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以切削目标样本。The embodiment of the present disclosure provides a method for preparing a microscopic specimen, which is applicable to an electronic device with a processor. The method includes the following steps: identifying multiple test samples in a test image, and selecting a target sample from the test samples according to the identification result; transferring the target sample to a sample support, and obtaining a top view of the transferred target sample to identify the center point of the target sample in the top view; and moving the position of a mask used for cutting the target sample according to the displacement between the center point and the cutting pattern of the target sample to cut the target sample.

本公开的实施例提供一种显微试片制备装置,其包括影像获取设备、移载装置、切削装置及处理器。影像获取设备是用以获取多个测试样本的测试影像。移载装置是用以将测试样本移载至样本支柱。切削装置是用以切削测试样本。处理器耦接影像获取设备、移载装置及切削装置,且经配置以辨识测试影像中的测试样本,并根据辨识结果从测试样本中挑选一个目标样本,利用移载装置将目标样本移载至样本支柱,并利用影像获取设备获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点,以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以使用切削装置切削目标样本。The embodiments of the present disclosure provide a device for preparing a microscopic specimen, which includes an image acquisition device, a transfer device, a cutting device, and a processor. The image acquisition device is used to acquire test images of a plurality of test samples. The transfer device is used to transfer the test samples to a sample support. The cutting device is used to cut the test samples. The processor is coupled to the image acquisition device, the transfer device, and the cutting device, and is configured to identify the test samples in the test images, and select a target sample from the test samples according to the identification result, transfer the target sample to the sample support using the transfer device, and acquire a top view of the target sample after transfer using the image acquisition device, so as to identify the center point of the target sample in the top view, and according to the displacement between the center point and the cutting pattern of the target sample, move the position of the mask used for cutting the target sample, so as to cut the target sample using the cutting device.

本公开的实施例提供一种计算机可读取记录介质,记录程序,所述程序经处理器加载以执行:辨识一测试影像中的多个测试样本,并根据辨识结果从测试样本中挑选一个目标样本;将目标样本移载至样本支柱,并获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点;以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以切削目标样本。An embodiment of the present disclosure provides a computer-readable recording medium that records a program, which is loaded by a processor to execute: identifying multiple test samples in a test image, and selecting a target sample from the test samples based on the identification results; transferring the target sample to a sample support, and obtaining a top view of the target sample after the transfer to identify the center point of the target sample in the top view; and moving the position of a mask used for cutting the target sample based on the displacement between the center point and the cutting pattern of the target sample to cut the target sample.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

当结合附图阅读时,从以下详细描述最好地理解本公开内容的各方面。应注意,根据行业中的标准惯例,各种特征未按比例绘制。实际上,为了论述清楚起见,可任意增大或减小各种特征的尺寸。When read in conjunction with the accompanying drawings, various aspects of the present disclosure are best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

图1是根据本公开实施例所绘示的显微试片装置的方块图。FIG. 1 is a block diagram of a microscope test piece device according to an embodiment of the present disclosure.

图2是根据本公开实施例所绘示的显微试片制备分析方法的流程图。FIG. 2 is a flow chart of a method for preparing and analyzing a microscopic specimen according to an embodiment of the present disclosure.

图3是根据本公开实施例所绘示的辨识及挑选测试样本的范例。FIG. 3 is an example of identifying and selecting test samples according to an embodiment of the present disclosure.

图4是根据本公开实施例所绘示的辨识及挑选测试样本的范例。FIG. 4 is an example of identifying and selecting test samples according to an embodiment of the present disclosure.

图5A至图5C是根据本公开实施例所绘示的焦点调整的范例。5A to 5C are examples of focus adjustment according to an embodiment of the present disclosure.

图6是根据本公开实施例所绘示的样本切削的范例。FIG. 6 is an example of sample cutting according to an embodiment of the present disclosure.

图7是根据本公开实施例所绘示的学习样本尺寸与切削图案关系的范例。FIG. 7 is an example of the relationship between the learning sample size and the cutting pattern according to an embodiment of the present disclosure.

图8A及图8B是根据本公开实施例所绘示的校正切削图案的范例。8A and 8B are examples of corrected cutting patterns according to an embodiment of the present disclosure.

附图标号说明:Description of Figure Numbers:

10:显微试片装置10: Microscope specimen device

12:影像获取设备12: Image acquisition equipment

14:移载装置14: Transfer device

16:切削装置16: Cutting device

18:处理器18: Processor

30、40、52~56、60:影像30, 40, 52-56, 60: Image

32、34、36:晶体管32, 34, 36: Transistors

42、44:区域42, 44: Area

62:样本62: Sample

70、80:俯视图70, 80: Top view

72:目标样本72: Target sample

74、82:切削图案74, 82: Cutting pattern

C:中心点C: Center point

d:直径d: diameter

X:位移X: Displacement

S202~S206:步骤S202~S206: Steps

具体实施方式DETAILED DESCRIPTION

以下公开内容提供用于实施所提供主题的不同特征的许多不同实施例或实例。下文描述组件和布置的特定实例以简化本公开内容。当然,这些组件和布置仅是实例且并不意欲为限制性的。举例来说,在以下描述中,第一特征在第二特征上方或上的形成可包含第一特征和第二特征直接接触地形成的实施例,且还可包含额外特征可形成于第一特征与第二特征之间以使得第一特征和第二特征可不直接接触的实施例。此外,本公开内容可在各种实例中重复参考标号和/或字母。这种重复是出于简化和清楚的目的,且本身并不指示所论述的各种实施例和/或配置之间的关系。The following disclosure provides many different embodiments or examples for implementing the different features of the provided themes. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these components and arrangements are only examples and are not intended to be restrictive. For example, in the following description, the formation of a first feature above or on a second feature may include an embodiment in which the first feature and the second feature are directly contacted, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be directly contacted. In addition, the present disclosure may repeat reference numerals and/or letters in various examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and/or configurations discussed.

此外,为易于描述,如“在…下方”、“在…下”、“下部”、“在…上方”、“上部”等的空间相对术语可在本文中用于描述如图式中所说明的一个元件或特征与另一(一些)元件或特征的关系。除图式中所描绘的定向以外,空间相关术语意欲包涵装置在使用或操作中的不同定向。设备可以其它方式定向(旋转90度或处于其它定向),且本文中所使用的空间相对描述词同样可相应地进行解释。Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

图1是根据本公开实施例所绘示的显微试片装置的方块图。参照图1,本实施例的显微试片装置10包括影像获取设备12、移载装置14、切削装置16及耦接于影像获取设备12、移载装置14、切削装置16的处理器18,其功能分述如下:FIG1 is a block diagram of a microscopic test piece device according to an embodiment of the present disclosure. Referring to FIG1 , the microscopic test piece device 10 of the present embodiment includes an image acquisition device 12, a transfer device 14, a cutting device 16, and a processor 18 coupled to the image acquisition device 12, the transfer device 14, and the cutting device 16, and its functions are described as follows:

影像获取设备12例如是穿透式电子显微镜(Transmission ElectronMicroscope,TEM)或扫描式电子显微镜(Scanning Electron Microscope,SEM)等显微观测装置,其例如是将经过加速和聚集的电子束投射到样本上或扫描样本表面来产生样本表面的影像,其分辨率例如可达0.1奈米。The image acquisition device 12 is, for example, a transmission electron microscope (TEM) or a scanning electron microscope (SEM), which projects an accelerated and focused electron beam onto a sample or scans the sample surface to generate an image of the sample surface, with a resolution of, for example, 0.1 nanometers.

移载装置14例如是显微操作器(Micromanipulator),其例如可将样本移载至样本支柱。所述样本例如是利用聚焦离子束(Focused Ion Beam,FIB)对待测组件(例如半导体组件)进行挖沟、切割、蚀刻等操作后所获得的长条状或薄片状物,所述样本支柱的材质例如是钨、碳、白金等,在此不设限。在一实施例中,移载装置14是将样本薄片焊接到样本支柱上并切为长条状,以便后续制作针尖状的测试样本。The transfer device 14 is, for example, a micromanipulator, which can transfer the sample to the sample support. The sample is, for example, a strip or sheet obtained by trenching, cutting, etching, etc., using a focused ion beam (FIB) to perform operations such as grooving, cutting, etching, etc. on a component to be tested (such as a semiconductor component). The material of the sample support is, for example, tungsten, carbon, platinum, etc., which is not limited here. In one embodiment, the transfer device 14 welds the sample sheet to the sample support and cuts it into strips, so as to subsequently make a needle-shaped test sample.

切削装置16例如是聚焦离子束系统,其采用高能量的镓离子束(或氦离子束、氖离子束)由上而下对测试样本进行切削以制作奈米结构物。其中,切削装置16是利用图案化的离子束掩模(mask)来遮蔽聚焦离子束,以保留测试样本的遮蔽部分而移除未遮蔽部分,从而将测试样本切削成所要的形状(如针尖状)。在一实施例中,所述掩模上例如挖出甜甜圈(donut)状的图案,其内径例如大于或等于所要制作样本的直径。即,所述掩模能够保护内径范围内的样本不被切削,而仅切削内径至外径范围内的样本。The cutting device 16 is, for example, a focused ion beam system, which uses a high-energy gallium ion beam (or helium ion beam, neon ion beam) to cut the test sample from top to bottom to produce a nanostructure. The cutting device 16 uses a patterned ion beam mask to shield the focused ion beam to retain the shielded portion of the test sample and remove the unshielded portion, thereby cutting the test sample into a desired shape (such as a needle tip). In one embodiment, the mask is, for example, dug out a donut-shaped pattern, and its inner diameter is, for example, greater than or equal to the diameter of the sample to be produced. That is, the mask can protect samples within the inner diameter range from being cut, and only cut samples within the range from the inner diameter to the outer diameter.

处理器16例如是中央处理器(central processing unit,CPU)、可编程的通用或专用微处理器、数字信号处理器(digital signal processor,DSP)、可编程控制器、专用集成电路(application specific integrated circuit,ASIC)、可编程逻辑器件(programmable logic device,PLD)、其他相似的装置或其组合,而用以执行存储在随机存储器(random access memory,RAM)、只读存储器(read-only memory,ROM)、闪存(flashmemory)、硬盘等计算机可读取记录介质中的指令,以实行本公开实施例的显微试片制备方法。The processor 16 is, for example, a central processing unit (CPU), a programmable general-purpose or special-purpose microprocessor, a digital signal processor (DSP), a programmable controller, an application specific integrated circuit (ASIC), a programmable logic device (PLD), other similar devices or a combination thereof, and is used to execute instructions stored in a computer-readable recording medium such as a random access memory (RAM), a read-only memory (ROM), a flash memory, a hard disk, etc., to implement the microscope specimen preparation method of the embodiment of the present disclosure.

详细来说,图2是根据本公开实施例所绘示的显微试片制备分析方法的流程图。请同时参照图1及图2,本实施例的方法适用于图1所示的显微试片制备装置10,以下参照显微试片制备装置10中的各种组件阐述本实施例方法的详细步骤。Specifically, FIG2 is a flow chart of a method for preparing and analyzing a microscopic specimen according to an embodiment of the present disclosure. Please refer to FIG1 and FIG2 simultaneously. The method of this embodiment is applicable to the microscopic specimen preparation device 10 shown in FIG1. The detailed steps of the method of this embodiment are described below with reference to various components in the microscopic specimen preparation device 10.

在步骤S202中,显微试片制备装置10的处理器18辨识测试影像中的多个测试样本,并根据辨识结果从测试样本中挑选目标样本。In step S202 , the processor 18 of the microscope specimen preparation device 10 identifies a plurality of test samples in the test image, and selects a target sample from the test samples according to the identification result.

在一些实施例中,处理器18例如会控制影像获取设备12获取待测组件(例如半导体组件)的测试影像,并利用经过训练或学习的学习模型来辨识测试影像中的测试样本。此学习模型例如是利用机器学习(machine learning)算法建立,而通过输入不同测试样本的样本影像及其相应的样本参数,使得学习模型能够学习这些测试样本的样本影像与相应的样本参数之间的关系。所述的样本参数包括样本成品率、样本尺寸或样本形状至少其中之一,在此不设限。In some embodiments, the processor 18 controls the image acquisition device 12 to acquire a test image of a component to be tested (e.g., a semiconductor component), and uses a trained or learned learning model to identify a test sample in the test image. The learning model is established, for example, using a machine learning algorithm, and by inputting sample images of different test samples and their corresponding sample parameters, the learning model can learn the relationship between the sample images of these test samples and the corresponding sample parameters. The sample parameters include at least one of a sample yield, a sample size, or a sample shape, which are not limited here.

举例来说,图3是根据本公开实施例所绘示的辨识及挑选测试样本的范例。请参照图3,影像30是鳍式场效应晶体管(Fin Field-effect transistor,FinFET)阵列的SEM影像。其中,晶体管32、34的源极/漏极的外延(Epitaxy,EPI)层(即顶端的黑影区域)较为瘦小,其成品率也较低(如30%以下),而晶体管36的外延层则较为厚实饱满,其成品率可达到80%以上。本公开实施例通过将大量的样本影像(如晶体管32、34、36的影像)及其相应的样本参数(如成品率、尺寸、形状)等信息输入学习模型,学习模型即可识别出测试影像中各个样本的图案并自动判别样本的优劣。以影像30为例,学习模型可自动判别出晶体管36的成品率较佳,进而选择晶体管36作为后续制备试片所用的样本。For example, FIG. 3 is an example of identifying and selecting test samples according to an embodiment of the present disclosure. Referring to FIG. 3 , image 30 is a SEM image of a Fin Field-effect transistor (FinFET) array. Among them, the epitaxy (EPI) layer (i.e., the black shadow area at the top) of the source/drain of transistors 32 and 34 is relatively thin, and its yield is also low (e.g., below 30%), while the epitaxy layer of transistor 36 is relatively thick and full, and its yield can reach more than 80%. In the embodiment of the present disclosure, by inputting a large number of sample images (such as images of transistors 32, 34, and 36) and their corresponding sample parameters (such as yield, size, shape) and other information into the learning model, the learning model can recognize the pattern of each sample in the test image and automatically judge the quality of the sample. Taking image 30 as an example, the learning model can automatically judge that the yield of transistor 36 is better, and then select transistor 36 as the sample for subsequent preparation of the test piece.

在一些实施例中,处理器18还可根据测试影像中各个测试样本的影像对比度来辨识测试样本的种类,从而根据辨识结果挑选目标样本。In some embodiments, the processor 18 may further identify the type of the test sample according to the image contrast of each test sample in the test image, and select the target sample according to the identification result.

举例来说,图4是根据本公开实施例所绘示的辨识及挑选测试样本的范例。请参照图4,影像40同样是FinFET阵列的SEM影像。其中,区域42中样本(黑色柱状物)的影像对比度较低,而可辨识出样本的种类为P型金属氧化物半导体(P-type Metal-Oxide-Semiconductor,PMOS)场效应晶体管。相对地,区域44中样本(黑色柱状物)的影像对比度较高,而可辨识出样本的种类为N型金属氧化物半导体(N-type Metal-Oxide-Semiconductor,NMOS)场效应晶体管。For example, FIG. 4 is an example of identifying and selecting test samples according to an embodiment of the present disclosure. Referring to FIG. 4 , image 40 is also a SEM image of a FinFET array. The image contrast of the sample (black column) in region 42 is low, and the type of the sample can be identified as a P-type Metal-Oxide-Semiconductor (PMOS) field effect transistor. In contrast, the image contrast of the sample (black column) in region 44 is high, and the type of the sample can be identified as an N-type Metal-Oxide-Semiconductor (NMOS) field effect transistor.

在步骤S204中,处理器18控制移载装置14将步骤S202中选择的目标样本移载至样本支柱,并利用影像获取设备12获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点。其中,处理器18例如是利用切削装置16对待测组件进行挖沟、切割、蚀刻等操作以获得包括测试样本(例如图3中的晶体管36)的长条状或薄片状物,并将其移载并焊接至样本支柱。In step S204, the processor 18 controls the transfer device 14 to transfer the target sample selected in step S202 to the sample support, and uses the image acquisition device 12 to obtain a top view of the target sample after transfer, so as to identify the center point of the target sample in the top view. The processor 18, for example, uses the cutting device 16 to perform operations such as trenching, cutting, etching, etc. on the component to be tested to obtain a long strip or thin sheet including the test sample (such as the transistor 36 in FIG. 3), and transfers and welds it to the sample support.

在一些实施例中,处理器18在利用影像获取设备12获取目标样本的俯视图时,例如会调整影像获取设备12的焦点,使得该焦点位于目标样本的中心点,而获得清晰的样本影像。In some embodiments, when the processor 18 uses the image acquisition device 12 to acquire a top view of the target sample, the processor 18 adjusts the focus of the image acquisition device 12 so that the focus is located at the center point of the target sample to obtain a clear sample image.

举例来说,图5A至图5C是根据本公开实施例所绘示的焦点调整的范例。请参照图5A至图5C,影像52~56是由SEM从样本上方拍摄样本所获得的影像,而在拍摄影像期间,SEM例如会通过灰度/色彩模糊比对的方式调整其获取影像的焦点,使得所拍摄影像从原本较模糊的影像52逐渐转变为较清晰的影像54,进而转变为中心点C清晰可见的影像56。For example, FIG5A to FIG5C are examples of focus adjustment according to an embodiment of the present disclosure. Referring to FIG5A to FIG5C, images 52 to 56 are images obtained by SEM photographing the sample from above the sample, and during the image photographing, the SEM adjusts the focus of the acquired image by, for example, grayscale/color blur comparison, so that the captured image gradually changes from the originally blurry image 52 to a clearer image 54, and then to an image 56 with a clearly visible center point C.

在步骤S206中,处理器18根据所辨识的目标样本的中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以切削目标样本。In step S206 , the processor 18 moves the position of the mask used for cutting the target sample according to the displacement between the identified center point of the target sample and the cutting pattern of the target sample, so as to cut the target sample.

在一些实施例中,在制备样本时,例如可采用蒸镀或溅镀的方式在样本表面镀上厚度约10奈米至1微米的保护层,以保护样本表面不受破坏。所述保护层的材质例如包括金、铂、硅等,在此不设限。而在切削样本的过程中,样本(包括保护层)的高度与宽度会逐渐缩小,若切削过度以致于保护层过薄而失去效用,则样本表面可能会出现拉痕,使得成品率降低。对此,在一些实施例中,处理器18会利用影像获取设备12获取目标样本的侧视图,以计算目标样本在侧视图中的高度与宽度的比值,从而在所计算的比值小于默认值时,停止切削目标样本,以避免产生上述缺陷。所述默认值例如介于1至2,在此不设限。In some embodiments, when preparing a sample, a protective layer with a thickness of about 10 nanometers to 1 micron can be deposited on the surface of the sample by evaporation or sputtering, for example, to protect the surface of the sample from damage. The material of the protective layer includes, for example, gold, platinum, silicon, etc., which are not limited here. In the process of cutting the sample, the height and width of the sample (including the protective layer) will gradually decrease. If the cutting is excessive so that the protective layer is too thin and loses its effectiveness, scratches may appear on the surface of the sample, resulting in a reduction in the yield. In this regard, in some embodiments, the processor 18 uses the image acquisition device 12 to obtain a side view of the target sample to calculate the ratio of the height to the width of the target sample in the side view, so that when the calculated ratio is less than a default value, the cutting of the target sample is stopped to avoid the above-mentioned defects. The default value is, for example, between 1 and 2, which are not limited here.

举例来说,图6是根据本公开实施例所绘示的样本切削的范例。请参照图6,影像60是显微试片制备装置在切削样本期间,利用SEM拍摄样本62侧面所获得的影像。在切削样本62的过程中,样本的高度与宽度会逐渐缩小,而当所计算的比值小于默认值(例如2)时,显微试片制备装置将自动停止切削目标样本,以确保样本表面不被破坏。For example, FIG6 is an example of sample cutting according to an embodiment of the present disclosure. Referring to FIG6 , image 60 is an image obtained by using a SEM to photograph the side of a sample 62 during the sample cutting process of the microscopic specimen preparation device. During the process of cutting the sample 62, the height and width of the sample will gradually decrease, and when the calculated ratio is less than a default value (e.g., 2), the microscopic specimen preparation device will automatically stop cutting the target sample to ensure that the sample surface is not damaged.

在一些实施例中,处理器18会学习影像中样本尺寸与用以铣削(milling)样本的切削图案之间的关系,从而在判定切削图案偏离样本中心点时,能够自动地移动切削装置16的掩模来修正切削图案的位置。In some embodiments, the processor 18 learns the relationship between the sample size in the image and the cutting pattern used to mill the sample, so that when it is determined that the cutting pattern deviates from the center point of the sample, the mask of the cutting device 16 can be automatically moved to correct the position of the cutting pattern.

举例来说,图7是根据本公开实施例所绘示的学习样本尺寸与切削图案关系的范例。请参照图7,本公开实施例的显微试片制备装置例如是读取目标样本72的俯视图70的尺度(scale)及目标样本72在俯视图70中的直径d,据以调整掩模的位置使得掩模投影在俯视图70上的切削图案74(如图7所示的甜甜圈形状)的内径大于目标样本72的直径d,藉此确保目标样本72在切削过程中不被破坏。而根据所读取的尺度,显微试片制备装置例如会计算切削图案74在俯视图70中的位移(像素数目)与掩模的移动距离(奈米)之间的转换关系,用以在实施目标样本72的切削时能够正确地移动掩模的位置,使得切削图案74能够对齐目标样本72(中心点对齐)。For example, FIG. 7 is an example of the relationship between the learning sample size and the cutting pattern according to the embodiment of the present disclosure. Referring to FIG. 7 , the microscopic specimen preparation device of the embodiment of the present disclosure, for example, reads the scale of the top view 70 of the target sample 72 and the diameter d of the target sample 72 in the top view 70 , and adjusts the position of the mask accordingly so that the inner diameter of the cutting pattern 74 (the donut shape shown in FIG. 7 ) projected by the mask on the top view 70 is larger than the diameter d of the target sample 72 , thereby ensuring that the target sample 72 is not damaged during the cutting process. Based on the read scale, the microscopic specimen preparation device, for example, calculates the conversion relationship between the displacement (number of pixels) of the cutting pattern 74 in the top view 70 and the moving distance (nanometers) of the mask, so as to correctly move the position of the mask when cutting the target sample 72 , so that the cutting pattern 74 can be aligned with the target sample 72 (center point alignment).

图8A及图8B是根据本公开实施例所绘示的校正切削图案的范例。请参照图8A,本公开实施例的显微试片制备装置例如是从目标样本的俯视图80中辨识出目标样本的中心点C,并根据用以切削目标样本的掩模投影在俯视图80上的切削图案82的位置,计算目标样本的中心点C与的切削图案82之间的位移X。接着,请参照图8B,显微试片制备装置即依据先前学习的切削图案的位移(像素数目)与掩模的移动距离(奈米)之间的转换关系(如图7所示),计算相应此位移X的掩模的移动距离,并用以移动掩模,使得移动后掩模投影在俯视图80上的切削图案82与目标样本的中心点C对齐,而完成切削图案82的校正。FIG8A and FIG8B are examples of correcting the cutting pattern according to the embodiment of the present disclosure. Referring to FIG8A, the microscopic specimen preparation device of the embodiment of the present disclosure, for example, identifies the center point C of the target sample from the top view 80 of the target sample, and calculates the displacement X between the center point C of the target sample and the cutting pattern 82 according to the position of the cutting pattern 82 projected on the top view 80 by the mask used to cut the target sample. Next, referring to FIG8B, the microscopic specimen preparation device calculates the moving distance of the mask corresponding to the displacement X according to the conversion relationship between the displacement (number of pixels) of the cutting pattern and the moving distance (nanometers) of the mask learned previously (as shown in FIG7), and uses it to move the mask so that the cutting pattern 82 projected on the top view 80 by the mask after the movement is aligned with the center point C of the target sample, thereby completing the correction of the cutting pattern 82.

通过所述方法,本公开提供以下优点:(1)透过预先建立的学习模型自动辨识并挑选测试影像中的样本,可筛选出规格符合所设定测试条件的样本以进行试片制备;(2)透过机器学习样本中心点位移与掩模移动距离之间的转换关系,可通过辨识样本中心点而决定电子束掩模的位置。Through the method, the present disclosure provides the following advantages: (1) by automatically identifying and selecting samples in the test image through a pre-established learning model, samples with specifications that meet the set test conditions can be screened out for test piece preparation; (2) by machine learning the conversion relationship between the sample center point displacement and the mask movement distance, the position of the electron beam mask can be determined by identifying the sample center point.

根据一些实施例,提供一种显微试片制备方法,适用于具有处理器的电子装置。此方法包括下列步骤:辨识一测试影像中的多个测试样本,并根据辨识结果从测试样本中挑选一个目标样本;将目标样本移载至样本支柱,并获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点;以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以切削目标样本。According to some embodiments, a method for preparing a microscopic specimen is provided, which is applicable to an electronic device having a processor. The method includes the following steps: identifying a plurality of test samples in a test image, and selecting a target sample from the test samples according to the identification result; transferring the target sample to a sample support, and obtaining a top view of the transferred target sample to identify the center point of the target sample in the top view; and moving the position of a mask used for cutting the target sample according to the displacement between the center point and the cutting pattern of the target sample to cut the target sample.

根据一些实施例,提供一种显微试片制备装置,其包括影像获取设备、移载装置、切削装置及处理器。影像获取设备是用以获取多个测试样本的测试影像。移载装置是用以将测试样本移载至样本支柱。切削装置是用以切削测试样本。处理器耦接影像获取设备、移载装置及切削装置,且经配置以辨识测试影像中的测试样本,并根据辨识结果从测试样本中挑选一个目标样本,利用移载装置将目标样本移载至样本支柱,并利用影像获取设备获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点,以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以使用切削装置切削目标样本。According to some embodiments, a microscopic specimen preparation device is provided, which includes an image acquisition device, a transfer device, a cutting device and a processor. The image acquisition device is used to acquire test images of multiple test samples. The transfer device is used to transfer the test samples to a sample support. The cutting device is used to cut the test samples. The processor is coupled to the image acquisition device, the transfer device and the cutting device, and is configured to identify the test samples in the test images, and select a target sample from the test samples according to the identification result, transfer the target sample to the sample support using the transfer device, and acquire a top view of the target sample after transfer using the image acquisition device to identify the center point of the target sample in the top view, and according to the displacement between the center point and the cutting pattern of the target sample, move the position of the mask used for cutting the target sample, so as to cut the target sample using the cutting device.

根据一些实施例,提供一种计算机可读取记录介质,记录程序,所述程序经处理器加载以执行:辨识一测试影像中的多个测试样本,并根据辨识结果从测试样本中挑选一个目标样本;将目标样本移载至样本支柱,并获取移载后目标样本的俯视图,以辨识俯视图中目标样本的中心点;以及根据此中心点与目标样本的切削图案之间的位移,移动切削目标样本所使用的掩模的位置,以切削目标样本。According to some embodiments, a computer-readable recording medium is provided, recording a program, which is loaded by a processor to execute: identifying multiple test samples in a test image, and selecting a target sample from the test samples based on the identification results; transferring the target sample to a sample support, and obtaining a top view of the target sample after the transfer to identify the center point of the target sample in the top view; and moving the position of a mask used for cutting the target sample according to the displacement between the center point and the cutting pattern of the target sample to cut the target sample.

前文概述若干实施例的特征以使得本领域的技术人员可更好地理解本揭示内容的各方面。本领域的技术人员应了解,其可以容易地使用本公开内容作为设计或修改用于执行本文中所引入的实施例的相同目的和/或获得相同优势的其它制程和结构的基础。本领域的技术人员还应认识到,这类等效构造不脱离本公开内容的精神和范围,且其可在不脱离本公开内容的精神和范围的情况下在本文中作出各种改变、替代以及更改。The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for performing the same purposes and/or obtaining the same advantages of the embodiments introduced herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present disclosure.

Claims (10)

1. A method of preparing a microscopic test strip suitable for use in an electronic device having a processor, wherein the method comprises the steps of:
identifying a plurality of test samples in a test image, and selecting a target sample from the test samples according to an identification result;
transferring the target sample to a sample support column, and obtaining a top view of the transferred target sample so as to identify a center point of the target sample in the top view; and
The position of a mask used to cut the target sample is moved to cut the target sample according to the displacement between the center point and the cutting pattern of the target sample.
2. The method of claim 1, wherein the step of identifying a plurality of test samples in the test image and selecting the target sample from the test samples based on the identification result comprises:
identifying the test samples in the test image by using a learning model, and selecting the target samples according to the sample parameters corresponding to each identified test sample, wherein
The learning model is established by using a machine learning algorithm, and learns the relation between sample images of different test samples and corresponding sample parameters, wherein the sample parameters comprise at least one of sample yield, sample size or sample shape.
3. The method of claim 1, wherein the step of identifying a plurality of test samples in the test image and selecting the target sample from the test samples based on the identification result comprises:
Identifying the type of the test sample according to the image contrast of each test sample, and selecting the target sample according to the identification result.
4. The method of claim 1, wherein in the step of cutting the target sample, further comprising:
And obtaining a side view of the target sample, calculating the ratio of the height to the width of the target sample in the side view, and stopping cutting the target sample when the ratio is smaller than a default value.
5. The method of claim 1, wherein prior to the step of moving the position of a mask used in cutting the target sample according to the displacement between the center point and the cutting pattern of the target sample, further comprising:
reading the dimension of the top view and the diameter of the target sample in the top view;
Adjusting the position of the mask such that the inner diameter of the cutting pattern projected by the mask on the top view is greater than the diameter of the target sample; and
According to the scale, calculating a conversion relation between the displacement of the cutting pattern in the test image and the moving distance of the mask, so as to move the position of the mask when cutting the target sample.
6. A microscopic test piece preparing apparatus, comprising:
the image acquisition equipment acquires test images of a plurality of test samples;
a transfer device for transferring the test sample to a sample column;
a cutting device for cutting the test sample; and
A processor coupled to the image acquisition device, the transfer device, and the cutting device, configured to:
Identifying the test sample in the test image, and selecting a target sample from the test samples according to the identification result;
transferring the target sample to a sample support column by utilizing the transferring device, and acquiring a top view of the transferred target sample by utilizing the image acquisition equipment so as to identify a center point of the target sample in the top view; and
And moving the position of a mask used for cutting the target sample according to the displacement between the center point and the cutting pattern of the target sample so as to cut the target sample by using the cutting device.
7. The microscopic test strip preparation device of claim 6, wherein the processor recognizes the test samples in the test image using a learning model and selects the target samples according to sample parameters corresponding to each of the recognized test samples, wherein the learning model is established by the processor using a machine learning algorithm and learns a relationship between sample images of different plurality of test samples and corresponding sample parameters, wherein the sample parameters include at least one of sample yield, sample size, or sample shape.
8. The microscopic test strip preparation apparatus of claim 6, wherein the processor further obtains a side view of the target sample with the image obtaining device to calculate a ratio of a height to a width of the target sample in the side view, and stops cutting the target sample with the cutting device when the ratio is less than a default value.
9. The microscopic patch preparation apparatus of claim 6, wherein the processor further reads a dimension of the top view and a diameter of the target sample in the top view, and adjusts a position of the mask such that an inner diameter of the cutting pattern projected by the mask on the top view is larger than the diameter of the target sample, and calculates a conversion relationship between a displacement of the cutting pattern in the test image and a moving distance of the mask according to the dimension to move a position of the mask when cutting of the target sample is performed.
10. A computer-readable recording medium recording a program, wherein the program is loaded by a processor to execute:
identifying a plurality of test samples in a test image, and selecting a target sample from the test samples according to an identification result;
transferring the target sample to a sample support column, and obtaining a top view of the transferred target sample so as to identify a center point of the target sample in the top view; and
The position of a mask used to cut the target sample is moved to cut the target sample according to the displacement between the center point and the cutting pattern of the target sample.
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