CN113219794B - 一种具有能量回收功能的极紫外收集镜及其制备方法 - Google Patents
一种具有能量回收功能的极紫外收集镜及其制备方法 Download PDFInfo
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- CN113219794B CN113219794B CN202110528276.7A CN202110528276A CN113219794B CN 113219794 B CN113219794 B CN 113219794B CN 202110528276 A CN202110528276 A CN 202110528276A CN 113219794 B CN113219794 B CN 113219794B
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- multilayer film
- energy recovery
- recovery function
- collector mirror
- substrate
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- 238000011084 recovery Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 27
- 230000000737 periodic effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 239000002241 glass-ceramic Substances 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 238000000746 purification Methods 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 32
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110528276.7A CN113219794B (zh) | 2021-05-14 | 2021-05-14 | 一种具有能量回收功能的极紫外收集镜及其制备方法 |
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CN202110528276.7A CN113219794B (zh) | 2021-05-14 | 2021-05-14 | 一种具有能量回收功能的极紫外收集镜及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN113219794A CN113219794A (zh) | 2021-08-06 |
CN113219794B true CN113219794B (zh) | 2022-06-21 |
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CN202110528276.7A Active CN113219794B (zh) | 2021-05-14 | 2021-05-14 | 一种具有能量回收功能的极紫外收集镜及其制备方法 |
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CN (1) | CN113219794B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102105837A (zh) * | 2008-08-15 | 2011-06-22 | Asml荷兰有限公司 | 反射镜、光刻设备以及器件制造方法 |
CN105446088A (zh) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | 具有微结构和光谱纯化层的光源收集镜 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005048670B3 (de) * | 2005-10-07 | 2007-05-24 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle |
NL2002838A1 (nl) * | 2008-05-30 | 2009-12-01 | Asml Netherlands Bv | Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter. |
NL2002545C2 (nl) * | 2009-02-20 | 2010-08-24 | Univ Twente | Werkwijze voor het splitsen van een bundel met elektromagnetische straling met golflengtes in het extreem ultraviolet (euv) en het infrarood (ir) golflengtegebied en optisch tralie en optische inrichting daarvoor. |
NL2005245C2 (nl) * | 2010-08-18 | 2012-02-21 | Univ Twente | Spectraal filter voor het splitsen van een bundel met elektromagnetische straling met golflengtes in het extreem ultraviolet (euv) of zachte rontgen (soft x) en het infrarood (ir) golflengtegebied. |
NL2010274C2 (en) * | 2012-02-11 | 2015-02-26 | Media Lario Srl | Source-collector modules for euv lithography employing a gic mirror and a lpp source. |
CN105122140B (zh) * | 2013-04-17 | 2018-06-01 | Asml荷兰有限公司 | 辐射收集器、辐射源以及光刻设备 |
CN106338882B (zh) * | 2015-12-21 | 2019-11-05 | 中国科学院长春光学精密机械与物理研究所 | 一种极紫外多层膜及其制备方法 |
-
2021
- 2021-05-14 CN CN202110528276.7A patent/CN113219794B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102105837A (zh) * | 2008-08-15 | 2011-06-22 | Asml荷兰有限公司 | 反射镜、光刻设备以及器件制造方法 |
CN105446088A (zh) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | 具有微结构和光谱纯化层的光源收集镜 |
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CN113219794A (zh) | 2021-08-06 |
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Effective date of registration: 20241008 Address after: Room 1, No. 3033 Pudong Road, Economic and Technological Development Zone, Changchun City, Jilin Province, China 130012 Patentee after: Changguang Jizhi Optical Technology Co.,Ltd. Country or region after: China Address before: 130033 No. 3888 southeast Lake Road, Changchun economic and Technological Development Zone, Jilin Patentee before: CHANGCHUN INSTITUTE OF OPTICS, FINE MECHANICS AND PHYSICS, CHINESE ACADEMY OF SCIENCE Country or region before: China |
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