CN113219681B - Optical waveguide integrated device - Google Patents
Optical waveguide integrated device Download PDFInfo
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- CN113219681B CN113219681B CN202010071916.1A CN202010071916A CN113219681B CN 113219681 B CN113219681 B CN 113219681B CN 202010071916 A CN202010071916 A CN 202010071916A CN 113219681 B CN113219681 B CN 113219681B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 217
- 238000002955 isolation Methods 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000007704 transition Effects 0.000 claims abstract description 34
- 125000006850 spacer group Chemical group 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 229910004304 SiNy Inorganic materials 0.000 claims description 2
- -1 DKDP Chemical compound 0.000 claims 1
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- 230000010354 integration Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- 238000005530 etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910013292 LiNiO Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- GNSKLFRGEWLPPA-ZSJDYOACSA-M potassium;dideuterio phosphate Chemical compound [K+].[2H]OP([O-])(=O)O[2H] GNSKLFRGEWLPPA-ZSJDYOACSA-M 0.000 description 1
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- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Disclosed is an optical waveguide integrated device, which may include: a substrate; a first isolation layer on the substrate; an optical waveguide member at least partially embedded in the first isolation layer and spaced apart from the substrate; a transition layer disposed on the first isolation layer and the optical waveguide member; and a light modulation layer disposed on the transition layer and overlapping the top surface of the optical waveguide member. A portion of the transition layer between the light modulation layer and the first spacer layer and a portion of the transition layer between the light modulation layer and the optical waveguide member may have different compositions.
Description
Technical Field
The present invention relates to an optical waveguide integrated device, and more particularly, to an optical waveguide integrated device that can be easily manufactured.
Background
Electro-optical modulation devices such as phase modulation devices and intensity modulation devices may be used in optical systems in general. Based on the electro-optical effect of the optical crystal such as lithium niobate and lithium tantalate, the electro-optical modulation device can modulate the phase, amplitude, intensity or polarization state of the optical signal, so as to load information on the optical wave. Specifically, when a voltage is applied to the above-described electro-optical crystal, the refractive index of the electro-optical crystal may vary according to the applied electric field, which causes the characteristics (e.g., phase, amplitude, intensity, or polarization state, etc.) of the light wave passing through the electro-optical crystal to vary, thereby achieving modulation of the optical signal. Therefore, the electro-optical modulator can be widely applied to the fields of optical communication, high-power laser synthesis, laser radar, precision measurement, sensors and the like. For example, the lithium niobate phase modulation device can modulate the phase of an optical wave based on the electro-optic effect, and has the advantages of high response speed, large modulation bandwidth, easy integration and the like.
In conventional electro-optic modulators, electro-optic crystals such as lithium niobate are typically used to form the optical waveguide. However, since the electro-optical crystal such as lithium niobate is difficult to etch and the surface of the electro-optical crystal such as lithium niobate is roughened by a conventional etching process, this may increase optical loss of the electro-optical modulation device. Therefore, in order to obtain a flat etched surface to reduce optical loss, it is often necessary to employ special etching techniques, which are critical steps in the fabrication of waveguide structures and become an important factor limiting the industrial production of electro-optic modulators comprising electro-optic crystals such as lithium niobate.
In addition, in the conventional electro-optical device, a silicon oxide isolation layer is disposed between the substrate and the optical waveguide layer to separate the substrate from the optical waveguide layer, thereby preventing light transmitted in the optical waveguide layer from leaking into the substrate. However, in such a structure, when light of different incident angles (i.e., light of different modes) is simultaneously transmitted in the waveguide layer, light having a small incident angle tends to enter the silicon oxide isolation layer from the optical waveguide layer having a large refractive index, resulting in an increase in light transmission loss. In order to solve the problem, the optical transmission loss is usually improved by increasing the thickness of the isolation layer, but an excessively thick isolation layer may cause an excessively large wafer warpage and easily cause film peeling, thereby affecting the subsequent device processing process.
Disclosure of Invention
Technical problem
It is an object of the present disclosure to provide an optical waveguide integrated device.
An object of the present disclosure is to provide an optical waveguide integrated device that is easy to manufacture.
An object of the present disclosure is to provide an optical waveguide integrated device to solve the problem that an electro-optical crystal such as lithium niobate is difficult to process, and thereby, industrial production of an electro-optical modulator including an electro-optical crystal such as lithium niobate can be realized.
Technical scheme
An optical waveguide integrated device according to an embodiment of the present disclosure may include: a substrate; a first isolation layer on the substrate; an optical waveguide member at least partially embedded in the first isolation layer and spaced apart from the substrate; a transition layer disposed on the first isolation layer and the optical waveguide member; and a light modulation layer disposed on the transition layer and overlapping the top surface of the optical waveguide member. A portion of the transition layer between the light modulation layer and the first spacer layer and a portion of the transition layer between the light modulation layer and the optical waveguide member may have different compositions.
In an embodiment according to the present disclosure, the optical waveguide integrated device may further include an additional isolation layer disposed between the substrate and the first isolation layer. The additional isolation layer may include a plurality of sub-isolation layers having different refractive indexes and alternately stacked one on another.
In an embodiment according to the present disclosure, the optical waveguide integrated device may further include: an active layer disposed between the substrate and the optical waveguide member; and a second isolation layer disposed between the substrate and the active layer. One end portion of the active layer and one end portion of the optical waveguide member overlap each other.
In an embodiment according to the present disclosure, the one end portion of the active layer may have a gradually decreasing width in a direction toward the optical waveguide member when viewed in a plan view.
In an embodiment according to the present disclosure, the active layer may include at least one of GaAs, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, and InGaAsP.
In an embodiment according to the present disclosure, the second isolation layer may include a plurality of sub-isolation layers having different refractive indexes and alternately stacked with each other.
In an embodiment according to the present disclosure, each of the plurality of sub-isolation layers may have a refractive index smaller than a refractive index of the light modulation layer or a refractive index of the optical waveguide member.
In an embodiment according to the present disclosure, the plurality of sub-isolation layers may include a first sub-isolation layer and a second sub-isolation layer, and the first sub-isolation layerThe layer may comprise SiO2And the second sub-isolation layer may include Si3N4。
In an embodiment according to the present disclosure, the optical waveguide integrated device may further include a compensation layer disposed on a bottom surface of the substrate opposite to the upper surface, and the compensation layer may have the same structure as the additional isolation layer.
In an embodiment according to the present disclosure, the light modulation layer may further overlap at least a portion of a top surface of the first isolation layer.
In the embodiment according to the present disclosure, the light modulation layer and the optical waveguide member have the same shape.
In an embodiment according to the present disclosure, when viewed in a cross-sectional view, a bottom surface and a side surface of the optical waveguide member may be covered by the first isolation layer, and a top surface of the optical waveguide member may be exposed by the first isolation layer and located at the same level as the top surface of the first isolation layer.
In an embodiment according to the present disclosure, the thickness of the optical waveguide member may be about 50nm to about 2 μm, and the width of the optical waveguide member may be about 50nm to about 20 μm.
In embodiments according to the present disclosure, the light modulation layer may include lithium niobate, lithium tantalate, quartz, indium phosphide, KDP, DKDP, KTP, or RTP.
In an embodiment according to the present disclosure, the optical waveguide member may include silicon, SiOxOr SiNy。
In an embodiment according to the present disclosure, when the optical waveguide member includes Si3N4When the light guide member is formed of the light guide layer, the transition layer may include N element in a portion thereof between the light guide member and the light modulation layer.
In an embodiment according to the present disclosure, the optical waveguide member may be a strip-shaped optical waveguide.
Advantageous effects
In the embodiments according to the present disclosure, by integrating an optical waveguide structure formed of a conventional optical waveguide material and an optical modulation layer formed of an electro-optical crystal such as lithium niobate to form an optical waveguide integrated device applied to an electro-optical modulator, a complicated process for processing lithium niobate can be avoided, and thus industrial production of an electro-optical modulator including an electro-optical crystal such as lithium niobate can be realized. In addition, the additional separation layer may be a stacked structure in which layers having different refractive indexes from each other are alternately stacked, so that quantum wells may be formed between the light modulation layer and the substrate and between the optical waveguide member and the substrate to reflect light leaked from the optical waveguide member or the light modulation layer back to the optical waveguide member or the light modulation layer, thereby reducing optical loss. Further, the substrate warpage is improved by forming a compensation layer on the bottom surface of the substrate so that the stresses applied to both faces of the substrate cancel each other out. In addition, by forming an active layer on the piezoelectric thin film layer, a composite structure including an active semiconductor as a light emitting layer and a piezoelectric thin film as a waveguide layer or a light modulation layer can be obtained, and at the same time, the composite structure can have functions of emitting light, guiding light, and modulating light, and the light emitting structure, the waveguide structure, and the light modulation structure are combined to realize photoelectric integration, so that the volume of a laser or a photoelectric modulator can be reduced, and the integration level of a photoelectric device can be improved.
Drawings
These and/or other aspects will become apparent and more readily appreciated from the following description of the exemplary embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a cross-sectional view of an optical waveguide integrated device according to an exemplary embodiment of the present disclosure;
fig. 2 is a cross-sectional view of an optical waveguide integrated device according to another exemplary embodiment of the present disclosure;
fig. 3 is a cross-sectional view of an optical waveguide integrated device according to another exemplary embodiment of the present disclosure;
fig. 4 is a schematic plan view of an optical waveguide integrated device according to another exemplary embodiment of the present disclosure;
FIG. 5 is a cross-sectional view taken along line I-I of FIG. 4, according to an exemplary embodiment of the present disclosure; and
fig. 6 is a cross-sectional view taken along line II-II of fig. 4 according to an exemplary embodiment of the present disclosure.
Reference numbers:
A. b, C optical waveguide integrated device 110 substrate
120-additional isolation layer 130-first isolation layer
140-second spacer 150-optical waveguide component
170-transition layer 160-active layer
190-light modulation layer 120' -compensation layer
Detailed Description
The principles of the present invention will be described in further detail below with reference to the accompanying drawings and exemplary embodiments so that the technical solutions of the present invention will be clear. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the embodiments of the invention to those skilled in the art. Like reference symbols in the various drawings indicate like elements. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.
In the existing optical waveguide manufacturing process, optical waveguide materials such as silicon, silicon nitride, silicon oxide, etc. are easy to process, and the manufacturing process thereof is mature. Therefore, according to the embodiments of the present disclosure, in order to solve the problem that an electro-optical crystal such as lithium niobate is difficult to process, an electro-optical modulation device can be manufactured by combining the electro-optical crystal such as lithium niobate with the above-described optical waveguide material which is easy to process. In particular, the above-described easily processable optical waveguide materials may be used to form optical waveguide structures to enable the transmission of light, while electro-optic crystals such as lithium niobate may be used to form optical modulation structures to modulate light. Therefore, it is possible to simultaneously realize optical modulation and optical transmission by combining an electro-optical crystal such as lithium niobate with the above-mentioned optical waveguide material which is easy to process, thereby avoiding the problem of difficult processing which occurs when an optical waveguide layer is prepared using an electro-optical crystal such as lithium niobate. Thus, industrial production of an electro-optical modulator including an electro-optical crystal such as lithium niobate can be realized. An optical waveguide integrated device according to an embodiment of the present disclosure will be described in detail below with reference to fig. 1 to 6.
Fig. 1 is a cross-sectional view of an optical waveguide integrated device according to an exemplary embodiment of the present disclosure. Next, an optical waveguide integrated device a according to an exemplary embodiment of the present disclosure will be described in detail with reference to fig. 1.
Referring to fig. 1, an optical waveguide integrated device a according to an exemplary embodiment of the present invention may include a substrate 110, a first isolation layer 130, an optical waveguide member 150, a transition layer 170, and a light modulation layer 190. Specifically, as shown in fig. 1, the first isolation layer 130 may be disposed on the substrate 110 and cover an upper surface of the substrate 110. Optical waveguide member 150 may be separated from substrate 110 by first isolation layer 130 and may be at least partially embedded in first isolation layer 130. In addition, the top surface of the optical waveguide member 150 may be located at the same level as the top surface of the first isolation layer 130. The transition layer 170 may be disposed on the optical waveguide member 150 and the first isolation layer 130 and cover top surfaces of the optical waveguide member 150 and the first isolation layer 130. The light modulation layer 190 may be disposed on the transition layer 170. The respective components of the optical waveguide integrated device a will be described in detail below with reference to fig. 1.
The substrate 110 may be used to support a film or component thereon. According to an exemplary embodiment of the present disclosure, the substrate 110 may be a silicon substrate, a quartz substrate, a silicon oxide substrate, lithium niobate (LN, LiNiO)3) Substrate or lithium tantalate (LT, LiTaO)3) A substrate, etc. However, example embodiments according to the present disclosure are not limited thereto, and the substrate 110 may be formed of other suitable materials. The substrate 110 may have a thickness from the micrometer to the millimeter scale. For example, the substrate 110 may have a thickness of about 0.1mm to about 1 mm. Preferably, the substrate 110 may have a thickness of about 0.1mm to about 0.2mm, about 0.3mm to about 0.5mm, or about 0.2mm to about 0.5 mm.
The first isolation layer 130 may be positioned between the substrate 110 and the optical waveguide member 150 to separate the substrate 110 from the optical waveguide member 150. The first separation layer 130 may have a refractive index smaller than that of the optical waveguide member 150, and thus may prevent light transmitted in the optical waveguide member 150Leakage into the substrate 110. In exemplary embodiments according to the present disclosure, the first isolation layer 130 may be made of silicon oxide (SiO)x) Made of, for example, SiO2And (4) forming. However, example embodiments according to the present disclosure are not limited thereto, and the first isolation layer 130 may be made using any suitable material. In an exemplary embodiment according to the present disclosure, the first isolation layer 130 may have a distance of about 3 μm to about 10 μm from a top surface to a bottom surface thereof when viewed in a cross-sectional view, and the first isolation layer 130 may have a distance of more than about 2 μm from a bottom surface thereof to a bottom surface of the optical waveguide member 150.
The optical waveguide member 150 may be an optical waveguide layer for transmitting light. As shown in fig. 1, the optical waveguide member 150 may be a strip-shaped optical waveguide (or a rectangular optical waveguide, a ridge optical waveguide). However, example embodiments according to the present disclosure are not limited thereto, and for example, the optical waveguide member 150 may be any suitable type of optical waveguide member. In addition, although the optical waveguide integrated device a illustrated in fig. 1 has two strip-shaped optical waveguide members 150, the number of optical waveguide members 150 (or the pattern composed of the optical waveguide members 150) according to the exemplary embodiment of the present disclosure may be variously changed according to specific applications.
In exemplary embodiments according to the present disclosure, the optical waveguide member 150 may be formed of silicon, silicon nitride, silicon oxide, or the like. However, exemplary embodiments according to the present disclosure are not limited thereto, and for example, the optical waveguide member 150 may be formed of any suitable material as long as the refractive index of the material forming the optical waveguide member 150 is greater than the refractive index of the first isolation layer 130.
The thickness of the optical waveguide member 150 is related to the quality and capacity of light transmission, and when the thickness of the optical waveguide member 150 is thin, the transmitted light is single-mode light, and the quality of light transmission is good, and when the thickness of the optical waveguide member is large, the number of modes of the transmitted light increases, and the transmission capacity increases, but the large thickness causes mixing, and thus the quality of light transmission is reduced. In an embodiment according to the present disclosure, the thickness of the optical waveguide member 150 may be about 50nm to about 2 μm. Preferably, the thickness of the optical waveguide member 150 may be about 50nm to about 1.8 μm, about 50nm to about 1.6 μm, about 200nm to about 1.4 μm, about 400nm to about 1.2 μm, about 600nm to about 1 μm, or any range defined by these numbers, such as about 400nm to about 1.8 μm or about 200nm to about 1.6 μm, and so forth. Further, the width of the optical waveguide member 150 may be about 50nm to about 20 μm. Preferably, the width of the optical waveguide member 150 may be about 50nm to about 15 μm, about 50nm to about 10 μm, about 50nm to about 5 μm, about 300nm to about 4 μm, about 500nm to about 3 μm, about 700nm to about 2 μm, or any range defined by these numbers, for example, about 500nm to about 15 μm or about 700nm to about 20 μm.
The light modulation layer 190 may be disposed on the optical waveguide member 150 and the first isolation layer 130. The light modulation layer 190 may cover the top surface of the optical waveguide member 150 when viewed in a plan view (i.e., the light modulation layer 190 may have the same shape as the optical waveguide member 150), or the light modulation layer 190 may cover at least a part of the top surface of the first isolation layer 130 and the entire top surface of the optical waveguide member 150.
The light modulation layer 190 may modulate an optical signal based on an electro-optic effect. In an embodiment in accordance with the present disclosure, the light modulation layer 190 may include lithium niobate. However, embodiments according to the present disclosure are not limited thereto, for example, the light modulation layer 190 may include lithium tantalate, KDP (potassium dihydrogen phosphate), DKDP (potassium dideuterium phosphate), quartz, KTP (KTiOPO)4Potassium titanyl phosphate), RTP (RbTiOPO)4Rubidium titanyl phosphate) or indium phosphide. In addition, the thickness of the light modulation layer 190 may be about 100nm to about 100 μm. Preferably, the thickness of the light modulation layer 190May be about 200nm to about 80 μm, about 300nm to about 60 μm, about 400nm to about 40 μm, about 500nm to about 20 μm, about 600nm to about 1 μm, or any range of these numerical limits, e.g., about 500nm to about 60 μm or about 300nm to about 40 μm, etc.
In an embodiment according to the present disclosure, the optical waveguide integrated device a may further include a transition layer 170 disposed between the light modulation layer 190 and the first isolation layer 130 and between the light modulation layer 190 and the optical waveguide member 150. The composition of the portion of the transition layer 170 between the light modulation layer 190 and the first spacer 130 is different from the composition of the portion of the transition layer 170 between the light modulation layer 190 and the optical waveguide member 150.
Specifically, as shown in fig. 1, a portion O of the transition layer 170 between the light modulation layer 190 and the optical waveguide member 150 further includes N elements, and the content of the N elements may be gradually reduced from the transition layer 170 to the light modulation layer 190, as compared to a portion of the transition layer 170 between the light modulation layer 190 and the first isolation layer 130. When there is no transition layer between the light modulation layer 190 and the adjacent layer, stress may be generated between the light modulation layer 190 and the first isolation layer 130, and the refractive index of the electro-optical crystal such as lithium niobate may be changed due to the stress, thereby causing distortion of the modulated light. In the exemplary embodiment according to the present disclosure, since the transition layers 170 exist between the light modulation layer 190 and the first isolation layer 130 and between the light modulation layer 190 and the optical waveguide member 150, the respective stresses are relieved, thereby reducing the influence on the refractive index of the light modulation layer 190.
In an embodiment according to the present disclosure, the transition layer 170 may be formed of silicon oxide. However, example embodiments according to the present disclosure are not limited thereto, and for example, the transition layer 170 may be formed of any suitable material as long as the refractive index of the transition layer is lower than that of the waveguide layer. In addition, the transition layer 170 may have a thickness of about 10nm to about 100 nm. Preferably, the thickness of the transition layer 170 may be about 10nm to about 90nm, about 10nm to about 80nm, about 20nm to about 70nm, about 30nm to about 60nm, about 40nm to about 50nm, or any range defined by these numbers, for example, about 10nm to about 60nm, etc.
As described above, the optical waveguide integrated device a described with reference to fig. 1 can be formed by integrating an optical waveguide member formed of a conventional optical waveguide material and a light modulation layer formed of an electro-optic crystal such as lithium niobate. In this case, since the conventional optical waveguide material is easy to process and the electro-optical crystal such as lithium niobate is used only for forming the optical modulation layer, a complicated processing process for lithium niobate is avoided, and thus industrial production of the electro-optical modulator including the electro-optical crystal such as lithium niobate can be realized.
Fig. 2 is a cross-sectional view of an optical waveguide integrated device according to another exemplary embodiment of the present disclosure. The difference between the optical waveguide integrated device B shown in fig. 2 and the optical waveguide integrated device a shown in fig. 1 will be mainly described below. Herein, like reference numerals denote like elements, and a repetitive description of the same elements will be omitted in order to avoid redundancy.
Referring to fig. 2, the optical waveguide integrated device B according to an exemplary embodiment of the present invention may include a substrate 110, an additional isolation layer 120, a first isolation layer 130, an optical waveguide member 150, a transition layer 170, and a light modulation layer 190. Specifically, as shown in fig. 2, the optical waveguide integrated device B may further include an additional isolation layer 120 between the first isolation layer 130 and the substrate 110, in addition to the substrate 110, the first isolation layer 130, the optical waveguide member 150, the transition layer 170, and the light modulation layer 190 described with reference to fig. 1.
As shown in fig. 2, the additional isolation layer 120 may be disposed between the substrate 110 and the first isolation layer 130, and may include a stack structure in which a plurality of sub-isolation layers having different refractive indices are alternately stacked on each other. For example, the additional isolation layer 120 may include a stack structure (e.g., a periodic stack structure such as a/B/a/B or an aperiodic stack structure of a/B/a) formed by alternately stacking first sub-isolation layers (not shown) and second sub-isolation layers (not shown). The first sub-isolation layer and the second sub-isolation layer may have refractive indexes different from each other, for example, the refractive index of the first sub-isolation layer may be smaller than the refractive index of the second sub-isolation layer. However, embodiments according to the present disclosure are not limited thereto, for example, the additional isolation layer 120 may include a stack structure (e.g., a periodic stack structure such as a/B/C/a/B/C or an aperiodic stack structure such as a/B/C/a/B// C/a) formed by alternately stacking first, second, and third sub-isolation layers (not shown).
In the optical waveguide integrated device B described above, since there is a refractive index difference between the sub-isolation layers alternately stacked in the additional isolation layer 120, quantum wells can be formed between the optical waveguide member 150 and the substrate 110 and between the light modulation layer 190 and the substrate 110 together with the first isolation layer 130. Light leaked from the optical waveguide member 150 or the light modulation layer 190 can be confined in the quantum well, and since the refractive index of the material forming the quantum well is smaller than that of the optical waveguide member 150 or the light modulation layer 190, the light confined in the quantum well can be easily reflected back to the optical waveguide member 150 or the light modulation layer 190. Therefore, the additional isolation layer 120 may serve to reflect light leaked from the optical waveguide member 150 or the light modulation layer 190 back to the optical waveguide member 150 or the light modulation layer 190. In addition, a bottom surface of the additional isolation layer 120 contacting the substrate 110 may correspond to a sub-isolation layer having a minimum refractive index among the additional isolation layers 120, and thus optical loss may be further reduced.
For the additional isolation layer 120, the first sub-isolation layer may include, for example, silicon oxide (SiO) when the refractive index of the first sub-isolation layer may be less than that of the second sub-isolation layerx) The second sub-isolation layer may include, for example, silicon nitride (SiN)y). In particular, in an embodiment according to the present invention, the first sub-isolation layer may include SiO2The second sub-isolation layer may include Si3N4. However, embodiments according to the inventive concept are not limited thereto, and for example, the first sub-isolation layer and the second sub-isolation layer may be formed of different materials having a refractive index smaller than that of the optical waveguide member 150 or the light modulation layer 190. In addition, the additional isolation layer 120 may have a thickness of about 1 μm to about 10 μm. When the additional isolation layer 120 includes the first sub-isolation layer and the second sub-isolation layer, each of the first sub-isolation layer and the second sub-isolation layer may have a thickness of about 200nm to 900 nm.Preferably, the thickness of each sub-isolation layer may be about 200nm to about 800nm, about 300nm to about 850nm, about 250nm to about 750nm, about 350nm to about 700nm, about 400nm to about 650nm, about 500nm to about 600nm, or any range of these numerical definitions, for example, about 500nm to about 900nm or about 300nm to about 600nm, and so forth.
As described above, the optical waveguide integrated device B described with reference to fig. 2 may further include an additional isolation layer 120 disposed between the first isolation layer 130 and the substrate 110. By adding the spacer layer 120, light leaking from the optical waveguide member 150 or the light modulation layer 190 can be reflected back to the optical waveguide member 150 or the light modulation layer 190, and thus optical loss can be reduced.
Fig. 3 is a cross-sectional view of an optical waveguide integrated device according to another exemplary embodiment of the present disclosure. The difference between the optical waveguide integrated device C shown in fig. 3 and the optical waveguide integrated device B shown in fig. 2 will be mainly described below. Herein, like reference numerals denote like elements, and a repetitive description of the same elements will be omitted in order to avoid redundancy.
As shown in fig. 3, the optical waveguide integrated device C may further include a compensation layer 120' disposed on the bottom surface of the substrate 110. The compensation layer 120 'may have the same structure as the additional isolation layer 120, or the compensation layer 120' and the additional isolation layer 120 may have a symmetrical structure with respect to the substrate 110. In particular, the compensation layer 120' may include a plurality of sub-isolation layers having different refractive indexes and alternately stacked with each other. For example, the compensation layer 120' may include first and second sub-compensation layers (not shown) and (not shown) alternately stacked, and the first sub-compensation layer may include silicon oxide (SiO)x) The second sub-compensation layer may include silicon nitride (SiN)y). In addition, the compensation layer 120' and the additional isolation layer 120 may be simultaneously formed through the same process, for example, through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process or a Low Pressure Chemical Vapor Deposition (LPCVD) process. In an embodiment according to the present invention, the compensation layer 120' may suppress warpage of the substrate 110 when the additional isolation layer 120 is formed.
In addition, when the optical waveguide integrated device does not include an additional isolation layer (shown in fig. 1), a compensation layer having the same structure as the first isolation layer may be provided on the bottom surface of the substrate. Thus, warping of the substrate when the first isolation layer is formed can be suppressed.
In an optical waveguide integrated device, there is some warpage due to heterojunction (two films of different materials are bonded together, and the shrinkage degree after heating is different due to different thermal expansion coefficients), which affects the subsequent device processing technology. The optical waveguide integrated device according to the exemplary embodiment of the present disclosure may form the compensation layer having the same structure as the additional isolation layer on the bottom surface of the substrate, so that stresses applied to both faces of the substrate are offset to each other, and thus, the substrate warpage may be improved and the influence of the warpage on the subsequent process may be reduced.
Further, the optical waveguide integrated device according to the embodiment of the present disclosure may further include an active layer for emitting light, in addition to the respective components illustrated in fig. 1 to 3. An optical waveguide integrated device including an active layer will be described below with reference to fig. 4 to 6.
Fig. 4 is a schematic plan view of an optical waveguide integrated device according to another exemplary embodiment of the present disclosure, fig. 5 is a sectional view taken along line I-I of fig. 4 according to an exemplary embodiment of the present disclosure, and fig. 6 is a sectional view taken along line II-II of fig. 4 according to an exemplary embodiment of the present disclosure. The difference between the optical waveguide integrated device D shown in fig. 4 and the optical waveguide integrated device B shown in fig. 2 will be mainly described below. Herein, like reference numerals denote like elements, and a repetitive description of the same elements will be omitted in order to avoid redundancy.
Fig. 4 is a plan view illustrating an optical waveguide integrated structure in accordance with another exemplary embodiment of the present disclosure, as exemplified by an M-Z interferometric modulator. However, embodiments according to the present disclosure are not limited thereto, and for example, the optical waveguide integrated structure according to the embodiments of the present disclosure may also be applied to such as a directional coupled modulator.
For convenience of description, fig. 4 shows only the substrate 110, the optical waveguide member 150, the light modulation layer 190, and the active layer 160 included in the optical waveguide integrated device D.
Referring to fig. 4 to 6, the optical waveguide member 150 and the light modulation layer 190 may be sequentially stacked on the substrate 110 and may have the same shape. In other words, the light modulation layer 190 may cover the top surface of the optical waveguide member 150 (or overlap with the optical waveguide member 150) when viewed in a plan view, without covering the top surface of the first isolation layer 130 as described above. Specifically, as shown in fig. 4, the optical waveguide member 150 and the light modulation layer 190 may each have a shape formed by connecting branches of two Y-shaped structures to each other.
In addition, as shown in fig. 4 to 6, the optical waveguide integrated device D may further include an active layer 160 and a second isolation layer 140.
The active layer 160 may be positioned between the substrate 110 and the optical waveguide member 150, and a portion of the active layer 160 overlaps the optical waveguide member 150. As shown in fig. 4 and 6, an end portion (e.g., an exit end) of the active layer 160 and an end portion (e.g., an incident end) of the optical waveguide member 150 may overlap each other in a thickness direction, so that light generated in the active layer 160 is transmitted into the optical waveguide member 150. In other words, a portion of the top surface of the active layer 160 and a portion of the bottom surface of the optical waveguide member 150 may contact each other. However, embodiments according to the present disclosure are not limited thereto, and for example, a transition layer may be further disposed between the active layer 160 and the light waveguide member 150. Further, the bottom surface of the active layer 160 may be located at the same level as the bottom surface of the first isolation layer 130.
An end portion of the active layer 160 overlapping the light guide member 150 may have a gradually decreasing width in a direction toward the light guide member 150 when viewed in a plan view, so that light generated in the active layer 160 is condensed at the end portion and transmitted into the light guide member 150. For example, in an embodiment according to the present disclosure, an end of the active layer 160 overlapping the light waveguide member 150 may have a cross-section of a triangular shape when viewed in a plan view.
In addition, in an embodiment according to the present disclosure, the active layer 160 may be formed of a III-V compound semiconductor. Specifically, the active layer 160 may be formed of at least one of GaAs, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, and InGaAsP.
The second isolation layer 140 may be disposed between the active layer 160 and the substrate 110 to separate the active layer 160 and the substrate 110. As shown in fig. 5 and 6, the second isolation layer 140 may be disposed between the active layer 160 and the substrate 110 and between the first isolation layer 130 and the substrate 110. In other words, the second isolation layer 140 may cover the bottom surface of the active layer 160 and the bottom surface of the first isolation layer 130. The second isolation layer 140 may include silicon oxide, silicon nitride, or silicon oxynitride.
Furthermore, embodiments according to the present disclosure are not limited thereto. For example, in one embodiment, the second isolation layer may be an additional isolation layer 120. In another embodiment, optical waveguide integrated device D may include an additional isolation layer 120 disposed between the second isolation layer and the substrate as described above with reference to fig. 2, or optical waveguide integrated device D may include an additional isolation layer 120 and a compensation layer 120' as described above with reference to fig. 3.
In addition, the optical waveguide integrated device according to the embodiment of the present disclosure may further include electrodes (not shown) for applying voltages to the active layer and the light modulation layer, respectively. The active layer and the corresponding electrode may constitute a light emitting portion to generate light of a desired wavelength. The modulation layer and the corresponding electrodes may constitute a light modulation section to modulate light transmitted from the active layer into the modulation layer, thereby implementing loading of signals onto the corresponding light waves.
The optical waveguide integrated device according to the embodiment of the present disclosure can obtain at least the following advantageous effects: by integrating an optical waveguide structure formed of a conventional optical waveguide material with an optical modulation layer formed of an electro-optical crystal such as lithium niobate to form an optical waveguide integrated device applied to an electro-optical modulator, a complicated process for processing lithium niobate can be avoided, and further, industrial production of the electro-optical modulator including the electro-optical crystal such as lithium niobate can be realized; the additional isolation layer may be a stacked structure in which layers having different refractive indexes from each other are alternately stacked, so that quantum wells may be formed between the light modulation layer and the substrate and between the optical waveguide member and the substrate to reflect light leaking from the optical waveguide member or the light modulation layer back to the optical waveguide member or the light modulation layer, thereby reducing optical loss; improving substrate warpage by forming a compensation layer on a bottom surface of a substrate such that stresses applied to both faces of the substrate cancel each other; and by forming an active layer on the piezoelectric thin film layer, a composite structure including an active semiconductor as a light emitting layer and a piezoelectric thin film as a waveguide layer or a light modulation layer can be obtained, and the composite structure can have functions of emitting light, guiding light and modulating light, and combines the light emitting structure, the waveguide structure and the light modulation structure to realize photoelectric integration, so that the volume of a laser or a photoelectric modulator can be reduced, and the integration level of a photoelectric device can be improved.
Although the optical waveguide integrated device according to the exemplary embodiment of the present disclosure is described above with reference to the drawings, the present disclosure is not limited thereto. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure.
Claims (16)
1. An optical waveguide integrated device, comprising:
a substrate;
a first isolation layer on the substrate;
an optical waveguide member at least partially embedded in the first isolation layer and spaced apart from the substrate;
a transition layer disposed on the first isolation layer and the optical waveguide member; and
a light modulation layer disposed on the transition layer and overlapping the top surface of the optical waveguide member,
wherein a portion of the transition layer between the light modulation layer and the first spacer layer and a portion of the transition layer between the light modulation layer and the optical waveguide member have different compositions,
wherein a portion of the transition layer between the light modulation layer and the optical waveguide member further includes an N element, and a content of the N element is gradually reduced from the transition layer to the light modulation layer.
2. The optical waveguide integrated device of claim 1, further comprising an additional isolation layer disposed between the substrate and the first isolation layer,
wherein the additional isolation layer includes a plurality of sub-isolation layers having different refractive indices and alternately stacked one on another.
3. The optical waveguide integrated device of claim 1, further comprising:
an active layer disposed between the substrate and the optical waveguide member; and
a second isolation layer disposed between the substrate and the active layer,
wherein one end portion of the active layer and one end portion of the optical waveguide member overlap each other.
4. The optical waveguide integrated device according to claim 3, wherein the one end portion of the active layer has a width gradually decreasing in a direction toward the optical waveguide member when viewed in a plan view.
5. The optical waveguide integrated device of claim 3, wherein the active layer comprises at least one of GaAs, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, and InGaAsP.
6. The optical waveguide integrated device according to claim 3, wherein the second isolation layer includes a plurality of sub-isolation layers having different refractive indices and alternately stacked on each other.
7. The optical waveguide integrated device according to claim 2, wherein a refractive index of each of the plurality of sub-isolation layers is smaller than a refractive index of the light modulation layer or a refractive index of the optical waveguide member.
8. The optical waveguide integrated device of claim 7, wherein the plurality of sub-isolation layers includes a first sub-isolation layer and a second sub-isolation layer, and
wherein the first sub-isolation layer comprises SiO2And the second sub-isolation layer comprisesSi3N4。
9. The optical waveguide integrated device of claim 2, further comprising a compensation layer disposed on a bottom surface of the substrate opposite the top surface, and the compensation layer has the same structure as the additional isolation layer.
10. The optical waveguide integrated device of claim 1, wherein the light modulation layer further overlaps at least a portion of a top surface of the first spacer layer.
11. The optical waveguide integrated device according to claim 1, wherein the light modulation layer and the optical waveguide member have the same shape.
12. The optical waveguide integrated device according to claim 1, wherein, when viewed in a cross-sectional view, the bottom surface and the side surface of the optical waveguide member are covered by the first isolation layer, and the top surface of the optical waveguide member is exposed by the first isolation layer and is located at the same level as the top surface of the first isolation layer.
13. The optical waveguide integrated device according to claim 1, wherein the thickness of the optical waveguide member is 50nm to 2 μm, and the width of the optical waveguide member is 50nm to 20 μm.
14. The optical waveguide integrated device of claim 1, wherein the light modulating layer comprises lithium niobate, lithium tantalate, quartz, indium phosphide, KDP, DKDP, KTP, or RTP.
15. The optical waveguide integrated device of claim 14, wherein the optical waveguide member comprises silicon, SiOxOr SiNy。
16. The optical waveguide integrated device of claim 15, wherein the optical waveguide member comprises Si3N4。
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