CN113213894A - High-purity alumina ceramic substrate and preparation process thereof - Google Patents
High-purity alumina ceramic substrate and preparation process thereof Download PDFInfo
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- CN113213894A CN113213894A CN202110553843.4A CN202110553843A CN113213894A CN 113213894 A CN113213894 A CN 113213894A CN 202110553843 A CN202110553843 A CN 202110553843A CN 113213894 A CN113213894 A CN 113213894A
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 97
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 18
- 239000011029 spinel Substances 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 239000000654 additive Substances 0.000 claims abstract description 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052681 coesite Inorganic materials 0.000 claims abstract 2
- 229910052593 corundum Inorganic materials 0.000 claims abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract 2
- 239000000377 silicon dioxide Substances 0.000 claims abstract 2
- 229910052682 stishovite Inorganic materials 0.000 claims abstract 2
- 229910052905 tridymite Inorganic materials 0.000 claims abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract 2
- 238000005266 casting Methods 0.000 claims description 25
- 238000000498 ball milling Methods 0.000 claims description 16
- 239000002270 dispersing agent Substances 0.000 claims description 16
- 239000004014 plasticizer Substances 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 8
- -1 Magnesium aluminate Chemical class 0.000 claims description 8
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical group CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical group [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 238000010345 tape casting Methods 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 2
- GANNOFFDYMSBSZ-UHFFFAOYSA-N [AlH3].[Mg] Chemical compound [AlH3].[Mg] GANNOFFDYMSBSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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Abstract
The invention discloses a high-purity alumina ceramic substrate and a preparation process thereof, wherein the ceramic substrate adopts specially purified superfine alpha-alumina powder as a main phase material, magnesia-alumina spinel powder as a fluxing agent, and lanthanum oxide and yttrium oxide as additives; requirements for alumina powder: the purity of Al2O3 is more than or equal to 99.9 percent, the content of SiO2 is less than 0.05 percent, the content of Fe2O3 is less than 0.02 percent, and the content of Na2O is less than 0.02 percent; the conversion rate of alpha-Al 2O3 is more than or equal to 96 percent; the conductivity is less than 100 mus/cm. 2. The ceramic substrate prepared by the preparation process of the high-purity alumina ceramic substrate has the volume density of more than or equal to 3.92g/cm3, the volume resistivity of more than or equal to 10145 omega-cm, the thermal conductivity of more than 2930W/(m.K), the dielectric constant of 9-10 (1MHz, 25 ℃) and the bending strength of more than or equal to 450 MPa. The preparation process adopts a tape casting process and a normal pressure sintering method.
Description
Technical Field
The invention relates to a high-purity alumina ceramic substrate used for the construction of a semiconductor power module, a power module and a 5G base station and a preparation process thereof; in particular to an alumina ceramic substrate with higher volume resistivity and higher bending strength and a preparation process thereof.
Background
The 96% alumina ceramic has high cost performance and wide application, but the volume resistivity and the thermal conductivity are not very excellent.
In recent years, ceramic substrates have been widely used in electronic device packaging due to their characteristics of high thermal conductivity, good heat resistance, low thermal expansion coefficient, high mechanical strength, good insulation, corrosion resistance, radiation resistance, and the like. With the increasing requirements on the reliability of device packaging in the application fields of microwave power, semiconductor power modules, 5G base station construction and the like, higher requirements on the thermal conductivity and the bending strength of aluminum oxide are provided.
Since the ceramic substrate having the alumina content of 99% or more has higher thermal conductivity and bending strength than the ceramic substrate having the alumina content of 96%, it is necessary to provide an alumina ceramic substrate having higher thermal conductivity and bending strength and a process for preparing the same.
Disclosure of Invention
In view of the defects of the background art, the invention aims to provide an alumina ceramic substrate with higher thermal conductivity and bending strength and a preparation process thereof, which meet the requirements of ceramic substrates required by the construction of semiconductor power modules, power modules and 5G base stations.
The purpose of the invention is realized by the following technical scheme:
a high-purity alumina ceramic substrate and its preparing process, which uses D50Superfine alpha-alumina powder with the particle size of 0.8-1.5 mu m is used as a main phase material, the alumina powder used by the high-purity alumina ceramic substrate is purified compared with common alumina powder, deionized water is adopted for repeated washing, and an electronic iron remover is used for removing iron, so that the purity of the alumina is more than or equal to that of the alumina99.9 percent. Wherein Al is2O3The content of the SiO is more than or equal to 99.9 percent2Content of (1) < 0.05%, Fe2O3The content of (A) is less than 0.02 percent, and Na2The content of O is less than 0.02 percent; alpha-Al2O3The conversion rate is more than or equal to 96 percent. The powder conductivity is less than 100 mus/cm (conductivity test method: take a clean 150ml beaker, add 100ml deionized water and heat to boil on electric stove, then, slowly add the 25g sample into the beaker, heat to boil on electric stove for 5min, take off the beaker, cool to room temperature, test its conductivity with conductivity meter). By using D50Magnesium aluminate spinel powder with the grain diameter of 0.5-0.9 mu m is taken as fluxing agent, and D is adopted50Lanthanum oxide and yttrium oxide with the grain size of 0.5-0.8 mu m are used as special additives.
Preferably, the alpha-alumina powder, magnesia-alumina spinel, lanthanum oxide and yttrium oxide powder constitute inorganic powder, and the composition ratio is that, the mass parts of the inorganic powder are 100 parts in total: more than 99 parts of alpha-alumina powder, wherein the mass of the magnesium-aluminum spinel powder is 0.2-0.7 part of the total mass of the inorganic powder, and lanthanum oxide and yttrium oxide which are used as special additives respectively account for 0.05-0.15 part of the total mass of the inorganic powder.
The raw materials for preparing the high-purity alumina ceramic substrate also comprise a solvent, a dispersing agent, a bonding agent and a plasticizer.
Preferably, the solvent is a binary azeotropic mixture of absolute ethyl alcohol and butanone, the dispersant is phosphate, the adhesive is polyvinyl butyral, and the plasticizer is dibutyl phthalate.
Preferably, the alpha-alumina powder and the magnesia-alumina spinel constitute inorganic powder, the addition amount of the solvent is 28-34% of the total mass of the inorganic powder, the addition amount of the dispersant is 0.8-1.6% of the total mass of the inorganic powder, the addition amount of the binder is 7-9% of the total mass of the inorganic powder, and the addition amount of the plasticizer is 3-4% of the total mass of the inorganic powder.
The invention also provides a preparation process for the high-purity alumina ceramic substrate, which is characterized by comprising the following steps of:
adding the alpha-alumina powder, the magnesium-aluminum spinel powder, the dispersant and the solvent in the formula ratio into a ball mill in proportion, and performing ball milling and dispersion for 24-48 hours; adding adhesive and plasticizer, and ball milling for 20-24 hr;
discharging from the ball mill, and obtaining casting slurry with the viscosity of 20000-and 30000mPa & s through vacuum defoaming; casting and molding the casting slurry on a casting machine, and cutting the obtained casting green sheet into corresponding size and shape through a stamping die;
sintering in a high-temperature kiln, wherein the temperature of a sintering temperature zone in the high-temperature kiln is 1580-1620 ℃, and preserving heat at high temperature for 3-5 hours to obtain the high-purity alumina ceramic substrate.
Compared with the prior art, the invention has the following advantages:
1. the volume resistivity of the high-purity alumina ceramic substrate prepared by the preparation process is not less than 1015Omega cm, thermal conductivity more than 30W/m.K, dielectric constant 9-10 (1MHz, 25 ℃), bending strength more than or equal to 450 MPa.
2. The invention adopts superfine alumina powder and magnesia-alumina spinel fluxing agent to realize the sintering of the ceramic substrate with the alumina content of more than 99 percent at about 1600 ℃.
3. The preparation process of the invention adopts a tape casting process and a normal pressure sintering method, and is convenient to realize.
Drawings
The invention is further described with reference to the following detailed description of embodiments and drawings, in which:
FIG. 1 is a microstructure view of a ceramic substrate having an alumina content of 99%;
FIG. 2 is a microstructure view of a ceramic substrate having an alumina content of 99.5%;
FIG. 3 is a microstructure diagram of a ceramic substrate having an alumina content of 99.3%.
Detailed Description
The embodiment provides a high-purity alumina ceramic substrate, a preparation process and a preparation process thereof, wherein D is adopted50High-purity superfine alpha-alumina powder with the grain diameter of 0.8-1.5 mu m is used as a main phase material, and D is adopted50Magnesium-aluminum tip with particle size of 0.5-0.9 mu mUsing spar powder as fluxing agent and D50Lanthanum oxide and yttrium oxide with the grain size of 0.5-0.8 mu m are used as special additives, and the four components jointly form inorganic powder, and the total amount is 100 parts. The specific composition proportion range is as follows: the mass of the alpha-alumina powder is more than 99 percent of the total mass of the inorganic powder, the mass of the magnesium aluminate spinel powder is 0.2 to 0.7 percent of the total mass of the inorganic powder, and lanthanum oxide and yttrium oxide which are used as special additives respectively account for 0.05 to 0.15 percent of the total mass of the inorganic powder. Lanthanum oxide and yttrium oxide may be added alone or in combination.
Compared with the common alumina powder, the alumina powder used by the high-purity alumina ceramic substrate is purified, deionized water is repeatedly used for washing for many times, and an electronic iron remover is used for removing iron, so that the purity of the alumina is more than or equal to 99.9%, and the alumina is high when the content of the alumina is more than 99%.
The raw materials for preparing the high-purity alumina ceramic substrate also comprise a solvent, a dispersant, a binder and a plasticizer. Wherein, a binary azeotropic mixture of absolute ethyl alcohol and butanone is selected as a solvent, phosphate ester is selected as a dispersant, polyvinyl butyral is selected as an adhesive, and dibutyl phthalate is selected as a plasticizer.
More specifically, the addition amount of the absolute ethyl alcohol and butanone solvent is 28-34% of the total weight of the inorganic powder, the addition amount of the dispersant phosphate is 0.8-1.6% of the total weight of the inorganic powder, the addition amount of the adhesive polyvinyl butyral is 7-9% of the total weight of the inorganic powder, and the addition amount of the plasticizer dibutyl phthalate is 3-4% of the total weight of the inorganic powder.
The preparation process of the high-purity alumina ceramic substrate comprises the following steps:
adding the alpha-alumina powder, the magnesium-aluminum spinel powder, the dispersant and the solvent in the formula ratio into a ball mill in proportion, and performing ball milling and dispersion for 24-48 hours; adding adhesive and plasticizer, and ball milling for 20-24 hr;
discharging from the ball mill, and obtaining casting slurry with the viscosity of 20000-and 30000mPa & s through vacuum defoaming; casting and molding the casting slurry on a casting machine, and cutting the obtained casting green sheet into corresponding size and shape through a stamping die;
sintering in a high-temperature kiln, wherein the temperature of a sintering temperature zone in the high-temperature kiln is 1580-1620 ℃, and preserving heat at high temperature for 3-5 hours to obtain the high-purity alumina ceramic substrate.
Firstly, proportionally adding alpha-alumina powder, magnesium aluminum spinel powder, a dispersing agent and a solvent into a ball mill, carrying out ball milling dispersion for 24-48 hours, then adding an adhesive and a plasticizer, carrying out secondary ball milling for 24 hours, discharging from the ball mill, and obtaining casting slurry with the viscosity of 20000-plus 30000mPa & s through vacuum defoaming; and (3) performing tape casting on a casting machine, cutting the obtained tape casting blank sheet into corresponding size and shape through a stamping die, sintering in a kiln at 1580-1620 ℃, and performing high-temperature heat preservation for 3-5 hours to prepare a ceramic substrate sample.
Based on the above technical solution of the present invention, the following examples are listed:
example 1:
a high-purity alumina ceramic substrate and a preparation process thereof are prepared from the following raw materials in parts by weight: d of 99 percent of the total weight of the inorganic powder50Alpha-alumina powder with grain diameter of 1.5 mu m is used as main phase material, and D accounts for 0.7 percent of the total weight of the inorganic powder50Magnesium aluminate spinel powder with particle size of 0.9 mu m and D accounting for 0.15 percent of the total weight of the inorganic powder50Lanthanum oxide with particle size of 0.8 mu m and D accounting for 0.15 percent of the total weight of the inorganic powder50Yttrium oxide with the grain size of 0.8 mu m is used as a special additive, and the four components form inorganic powder together. Adding 28 percent of solvent (the addition amount is 28 percent of the total weight of the inorganic powder) and 0.5 percent of dispersant (the addition amount is 0.8 percent of the total weight of the inorganic powder), and performing ball milling and dispersion for 24 hours; adding 7 percent of binder (the addition amount is 7 percent of the total weight of the inorganic powder) and 3 percent of plasticizer (the addition amount is 3 percent of the total weight of the inorganic powder), and performing secondary ball milling for 22 hours; discharging from a ball mill, and obtaining casting slurry with the viscosity of 28000mPa & s through vacuum defoaming; casting on a casting machine, sintering the obtained casting green sheet at the high temperature of 1620 ℃ for 5 hours, and obtaining the ceramic substrate with the specification of 138 multiplied by 190 multiplied by 1.0 mm.
Example 2:
a high-purity alumina ceramic substrate and a preparation process thereof are prepared from the following raw materials in parts by weight: is free ofD accounting for 99.5 percent of total weight of the machine powder50Alpha-alumina powder with particle size of 0.8 mu m is used as main phase material, and D accounts for 0.4 percent of the total weight of the inorganic powder50Magnesium aluminate spinel powder with particle size of 0.5 mu m and D accounting for 0.05 percent of the total weight of the inorganic powder50Lanthanum oxide with particle size of 0.5 mu m and D accounting for 0.05 percent of the total weight of the inorganic powder50Yttrium oxide with the grain diameter of 0.5 mu m is used as a special additive, inorganic powder is composed, 28 percent of solvent (the addition amount is 28 percent of the total weight of the inorganic powder) and 1.6 percent of dispersant (the addition amount is 1.6 percent of the total weight of the inorganic powder) are added, and ball milling and dispersion are carried out for 48 hours; adding 9 percent of binder (the addition amount is 9 percent of the total weight of the inorganic powder) and 4 percent of plasticizer (the addition amount is 4 percent of the total weight of the inorganic powder), and performing secondary ball milling for 24 hours; discharging from the ball mill, and obtaining casting slurry with the viscosity of 20000mPa & s through vacuum defoaming; and (3) performing tape casting on a casting machine, sintering the obtained tape casting blank sheet at the high temperature of 1580 ℃, and preserving the heat for 3 hours to obtain the ceramic substrate with the specification of 280 x 90 x 0.5 mm.
Example 3:
a high-purity alumina ceramic substrate and a preparation process thereof are prepared from the following raw materials in parts by weight: d of 99.3 percent of the total weight of the inorganic powder50Alpha-alumina powder with grain diameter of 1.5 mu m is used as main phase material, and D accounts for 0.5 percent of the total weight of the inorganic powder50Magnesium aluminate spinel powder with particle size of 0.8 mu m and D accounting for 0.1 percent of the total weight of the inorganic powder50Lanthanum oxide with particle size of 0.6 mu m and D accounting for 0.1 percent of the total weight of the inorganic powder50Yttrium oxide with the grain diameter of 0.6 mu m is used as a special additive to jointly form inorganic powder, 30 percent of solvent (the addition amount is 30 percent of the total weight of the inorganic powder) and 1.2 percent of dispersant (the addition amount is 1.2 percent of the total weight of the inorganic powder) are added, and the mixture is dispersed for 40 hours by ball milling; adding 8 percent of binder (the addition amount is 8 percent of the total weight of the inorganic powder) and 3.5 percent of plasticizer (the addition amount is 3.5 percent of the total weight of the inorganic powder), and performing secondary ball milling for 22 hours; discharging from a ball mill, and obtaining casting slurry with the viscosity of 22000mPa & s through vacuum defoaming; and (3) performing tape casting on a casting machine, sintering the obtained tape casting blank sheet at the high temperature of 1600 ℃, and keeping the temperature for 4 hours to obtain the ceramic substrate with the specification of 280 x 90 x 0.635 mm.
TABLE 1 Properties of high purity alumina ceramic substrates prepared in examples 1-3
As can be seen from table 1, as the content of alumina increases, the bending strength of the ceramic substrate gradually increases, the dielectric constant increases, and the thermal conductivity and the bending strength increase. The volume resistivity, the dielectric constant, the thermal conductivity and the bending strength are all detected by a third party, the thermal conductivity is measured according to a method specified in GB/T5598, the volume resistivity is measured according to a method specified in GB/T5594.5, and the dielectric constant is measured according to a method specified in GB/T5594.4.
Claims (8)
1. A high-purity alumina ceramic substrate is characterized in that: the ceramic substrate adopts D50High-purity alpha-alumina powder with the grain diameter of 0.8-1.5 mu m is used as a main phase material, and the high-purity alpha-alumina powder Al2O3Has a content of 99.9% or more and SiO2Less than 0.05%, Fe2O3Less than 0.02% of Na2O content less than 0.02%, alpha-Al2O3The conversion of (a) is not less than 96%; by using D50Magnesium aluminate spinel powder with the grain diameter of 0.5-0.9 mu m is taken as fluxing agent, and D is adopted50Lanthanum oxide and yttrium oxide with the grain size of 0.5-0.8 mu m are used as special additives; the alpha-alumina powder, the magnesia-alumina spinel powder and the special additive of lanthanum oxide and yttrium oxide form inorganic powder, the mass portions of the inorganic powder are 100 parts in total, and the composition ratio is as follows: more than 99 parts of alpha-alumina powder, wherein the mass of the magnesium-aluminum spinel powder is 0.2-0.7% of the total mass of the inorganic powder, the lanthanum oxide and the yttrium oxide which are used as special additives respectively account for 0.05-0.15% of the total mass of the inorganic powder, and the lanthanum oxide and the yttrium oxide are added independently or in a mixed manner.
2. The high purity alumina ceramic substrate of claim 1, wherein: compared with the common alumina powder, the high-purity alpha-alumina powder used by the high-purity alumina ceramic substrate is purified, deionized water is adopted for repeatedly washing for many times, and an electronic iron remover is used for removing iron, so that the purity of the alumina is more than or equal to 99.9 percent, and the conductivity is less than 100 mu s/cm.
3. The high purity alumina ceramic substrate of claim 1 or 2, wherein: the raw materials for preparing the high-purity alumina ceramic substrate also comprise a solvent, a dispersing agent, an adhesive and a plasticizer.
4. The high purity alumina ceramic substrate of claim 3, wherein: the solvent is a binary azeotropic mixture of absolute ethyl alcohol and butanone, the dispersant is phosphate, the adhesive is polyvinyl butyral, and the plasticizer is dibutyl phthalate.
5. The high purity alumina ceramic substrate of claim 4, wherein: the alpha-alumina powder and the magnesia-alumina spinel form inorganic powder, the addition amount of the solvent is 28-34% of the total mass of the inorganic powder, the addition amount of the dispersant is 0.8-1.6% of the total mass of the inorganic powder, the addition amount of the adhesive is 7-9% of the total mass of the inorganic powder, and the addition amount of the plasticizer is 3-4% of the total mass of the inorganic powder.
6. A production process for producing the high-purity alumina ceramic substrate according to any one of claims 4 to 5, comprising the steps of:
step 1), adding the alpha-alumina powder, the magnesium aluminate spinel powder, the dispersant and the solvent in the formula ratio into a ball mill in proportion, and performing ball milling and dispersion;
step 2), adding an adhesive and a plasticizer, and performing secondary ball milling;
step 3), discharging from the ball mill, and obtaining casting slurry with the viscosity of 20000-plus 30000 mPa-s through vacuum defoaming;
step 4), casting and molding the casting slurry on a casting machine, and cutting the obtained casting green sheet into corresponding size and shape through a stamping die;
and step 5), sintering in a high-temperature kiln, wherein the temperature of a sintering temperature zone in the high-temperature kiln is 1580-1620 ℃, and carrying out high-temperature heat preservation for 3-5 hours to obtain the high-purity alumina ceramic substrate.
7. The process for preparing a high-purity alumina ceramic substrate according to claim 6, wherein: the ball milling dispersion time in the step 1) is 24-48 hours.
8. The process for preparing a high-purity alumina ceramic substrate according to claim 6, wherein: the time of the secondary ball milling in the step 2) is 20 to 24 hours.
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