CN113204065A - Grating processing method and equipment - Google Patents
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- CN113204065A CN113204065A CN202110219276.9A CN202110219276A CN113204065A CN 113204065 A CN113204065 A CN 113204065A CN 202110219276 A CN202110219276 A CN 202110219276A CN 113204065 A CN113204065 A CN 113204065A
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Abstract
The invention discloses a grating processing method, which comprises the following steps: irradiating the surface of a region to be processed of the grating substrate by using laser to promote the surface of the region to generate oxidation reaction so as to obtain grating stripes with the stripe direction parallel to the polarization direction of the laser; wherein the energy density of the laser irradiated on the surface of the area to be processed of the grating is lower than the ablation threshold of the substance and is greater than or equal to the oxidation threshold of the substance. The invention also discloses equipment for implementing the method. The zero-order vortex half-wave plate generates a structural light field, and adopts single-beam laser exposure to generate sub-wavelength gratings with special shapes such as a ring shape, a radiation shape, a vortex shape and the like on a scale. In the preparation process, the intensity of scattered laser is utilized to realize the real-time monitoring of the stripe formation process.
Description
Technical Field
The invention belongs to the field of femtosecond laser advanced micro-nano manufacturing, and particularly relates to a method and equipment for quickly manufacturing special-shaped gratings in radiation shapes, annular shapes, vortex shapes and the like.
Background
Gratings are one of the most important elements in the modern optical development. In order to obtain more precise grating devices that can meet today's increasingly stringent scientific research and industrial manufacturing requirements, efforts have been made for a long time to improve the design methods and manufacturing processes of gratings. The key problem in grating fabrication is the preparation of the surface microstructure of the solid material. At present, the grating microstructure is mostly manufactured by means of microelectronic etching processes, such as laser direct-writing electron beam exposure, focused ion beam, and the like, groove processing is performed on the surface of a material, or periodic fringes formed by laser interference are utilized for photoetching to form a holographic grating. However, the laser interference method has difficulty in manufacturing grating structures with complex shapes such as a radial shape, a spiral shape, and the like. The manufacturing devices directly using extreme ultraviolet laser direct writing, electron beam exposure or ion beam etching are quite complex, expensive and slow in processing speed. Therefore, the method for developing the surface micro-nano structure manufacturing which can be rapidly prepared, processed in a large area and manufactured at low cost and the manufacturing method of the grating with the special shape has important scientific significance and industrial application value.
In recent years, it has been found that self-organized periodic stripes oriented perpendicular to the polarization direction of the laser can be formed on almost all material surfaces, including metals, semiconductors and dielectrics, using single beam femtosecond laser ablation. The mechanism of formation of such periodic fringes is generally considered to be caused by interference of incident laser light with plasmons excited on the surface of a solid. This provides a simple, fast, large area manufacturing concept for gratings. However, the most important problems faced in this respect are that the self-organized structure formed during laser ablation is not controlled, and stripe bifurcation and long-range disorder are easily caused. In order to further improve the regularity of the laser-induced self-organized stripes, it has recently been found that periodic metal oxide stripes can be formed on the oxidizable metal film by irradiating the oxidizable metal film with a beam of low-energy femtosecond laser. The orientation of the laser-induced metal oxide stripes is parallel to the polarization direction of the laser light relative to conventional laser-ablated stripes. This is because the formation of metal oxide fringes is due to interference of incident laser light with surface oxide particle dipole scattered light. Therefore, a positive feedback mechanism exists in the process of forming the metal oxide stripes, the metal oxide stripes are gradually and slowly grown, and the regularity of the finally formed stripes is greatly improved relative to that of the ablation stripes.
However, since the metal has a large amount of free electrons, the temperature of the metal surface rapidly rises under high-energy laser irradiation. High temperatures will adversely affect the formation of periodic oxide streaks. Meanwhile, surface plasmons are easily excited due to inevitable defects on the metal surface. The polarization direction of the surface plasmons is perpendicular to the oxide stripes, further adversely affecting the formation of the oxide stripes. Therefore, the method for eliminating the adverse effect of the photothermal effect on the periodic oxide stripes has important practical significance on the simple, quick and large-area grating structure manufacturing.
Disclosure of Invention
The invention relates to a novel grating preparation and processing method, in particular to a manufacturing method for rapidly processing gratings with special shapes such as radiation, annular and vortex shapes in a large area. The method can obviously reduce the manufacturing cost of the grating, shorten the processing period and prepare grating structures with complex shapes.
A method for processing a grating comprises the following steps: irradiating the surface of a region to be processed of the grating substrate by using laser to promote the surface of the region to generate oxidation reaction so as to obtain grating stripes with the stripe direction parallel to the polarization direction of the laser; the energy density of the laser irradiated on the surface of the area to be processed of the grating substrate is lower than an ablation threshold value of ablation of the surface and is larger than or equal to an oxidation threshold value of oxidation reaction of the surface.
In the invention, substances on the surface of the laser irradiated area can generate an oxidation process under the irradiation of laser to generate corresponding oxides; therefore, the incident wave interferes with the scattered wave of the oxide to form periodically distributed oxide fringes, and the specific principle is as follows: laser irradiation is performed on a grating base material (for example, a thin film material adhered to a substrate) so that substances in an irradiated region of the surface of the grating base material undergo an oxidation reaction to form oxide particles. Meanwhile, the incident laser light interferes with the dipole scattered wave of the oxide particles, and periodic interference fringes are formed on the surface of the thin film. Where the interference is constructive, the oxidation reaction is further enhanced, while where the interference is destructive, little chemical reaction occurs. Thus eventually forming stripes of periodically distributed oxide on the film.
Some of the preferred embodiments of the invention are further illustrated below:
in the invention, the grating substrate contains a substance which can generate oxidation reaction under the action of the laser; or the grating base material comprises a substrate and a thin film covered on one side of the substrate, and the thin film contains substances capable of generating oxidation reaction under the action of the laser. Further, the matter contained in the grating substrate includes two cases: one is that only a certain thickness of the surface to be processed contains the oxidizable substance; the other is that the grating substrate entirely contains the oxidizable substance. The term "include" may be used to mean that the main body is composed of a substance capable of undergoing an oxidation reaction, or may be a mixture of a substance capable of undergoing an oxidation reaction and other substances at a certain ratio, and may be adjusted as needed. Preferably, the substance comprises a metal or a semiconductor. Preferably, the substance is selected from one or more of silicon, titanium, tungsten, titanium nitride.
In the present invention, the polarization state determines the direction of the fringes and the grating structure. The invention can realize the regulation and control of the polarization state of incident light by utilizing the light polarization regulating element, and grating structures with different shapes can be obtained by regulating and controlling the polarization state of the incident light. Preferably, the light polarization adjusting element is a vortex half-wave plate; further preferred is a zero-order vortex half-wave plate. Radial or azimuthal polarization states, or a vortex-like polarization state intermediate between radial and azimuthal, can be generated using vortex half-wave plates. For example, after a beam of polarized vector light such as radial, angular, vortex and the like obtained by passing through a zero-order vortex half-wave plate is focused on a film, oxidation fringes in special shapes such as radiation, ring and vortex can be directly generated, and a grating structure with a corresponding structure is further formed.
In the present invention, the laser used is preferably a femtosecond pulse laser. The laser energy is distributed into Gaussian spots, flat-top spots or Laguerre-Gaussian hollow hole spots, and the laser energy is used for irradiating the surface of the grating substrate after being focused. The focused energy density can meet the requirement of oxidation reaction, but is far lower than the femtosecond laser ablation threshold of the film material, so that the influence of ablation on the product can be completely avoided. For example, taking the initial laser as a gaussian spot, the laser can generate radial and direction angles and counterclockwise polarization after being modulated by the vortex half-wave plate; and then the corresponding grating stripe structure is obtained. The invention can break through the optical diffraction limit in the traditional scanning laser direct writing processing technology and quickly form the grating structure with the period of sub-wavelength.
In the invention, the femtosecond pulse laser has unlimited repetition frequency and central wavelength, and the light spot mode can be diversified. The laser is focused on the surface of the sample to induce oxidation reaction. During actual processing, the incident energy of the pulse laser can be gradually increased by matching a half-wave plate with the analyzer, so that the control of the energy of the irradiated laser is realized.
In the invention, the period of the grating stripe is related to the wavelength of incident light or/and the thickness of the material containing the substance; the area where the grating stripes are generated is related to the laser action area. For example, the oxide fringe period is related to the wavelength of the incident laser, but always slightly less than the wavelength of the laser, when other conditions are unchanged. When a thin film structure is employed, the oxide fringe period is closely related to the thickness of the thin film.
By adopting the processing method, the obtained oxidation stripes are arranged regularly, the area of the generated stripes is consistent with the laser action area, and the method can be used for rapidly processing and preparing the grating structure in a large area. Because the oxidation fringes formed on the surface of the grating substrate (or the silicon thin film) by the femtosecond laser are gradually grown along the polarization direction of the laser. Therefore, the large-area and quick preparation process can be realized by matching with a two-dimensional translation table.
The oxidation stripe obtained by the invention can be used as a grating, and the period of the oxidation stripe can be regulated and controlled by controlling the wavelength of incident laser. The area of the prepared grating can be controlled by controlling the size of the incident light spot.
In the invention, a sample can be irradiated by using various light spots, and the invention has the advantage that various oxidation stripe grating structures with complex shapes can be realized. A light spot mode is selected, the energy density of the light spot mode is adjusted, a sample can be exposed at one time, and the grating structure processing in the whole light spot action area is realized. The transmission light spots are monitored by a light spot analyzer, and the real-time monitoring of the whole grating processing process can be realized.
In the present invention, the surface of the processing region includes not only the conventional planar structure but also some special non-planar structures.
Preferably, the grating substrate can be obtained by plating a silicon film on glass or sapphire with high flatness serving as a substrate by vacuum magnetron sputtering. The selection of the conditions for the film having high flatness is more favorable for forming the uniform oxidation stripes.
The invention also provides a device for preparing the grating by using the method of any one of the technical schemes, which comprises the following steps:
a laser transmitter providing incident laser light;
a light intensity adjusting element for adjusting the energy of the input laser;
and the focusing element is used for focusing and injecting the laser with the adjusted energy to the surface to be processed of the grating base material.
The laser emitter generally employs a femtosecond laser emitter capable of emitting femtosecond laser. The emitted laser light is a gaussian beam. The light intensity adjusting element is used for adjusting the laser intensity. Preferably, the emphasis adjustment element comprises a combination of an optical half-wave plate and an optical analyzer, which are used together to continuously vary the energy of the laser light to obtain the laser light of the energy we need.
Preferably, any one of the following elements or a combination of two or more elements or an integrated element thereof is also included:
the diffraction optical element converts an incident Gaussian laser mode into a flat top light or Laguerre-Gaussian hollow hole laser mode; when the scheme is selected, flat-top light spots or Laguerre-Gaussian hollow hole laser light spots can be obtained. Preferably, the diffraction optical element can select a flat-top spot beam shaper or a zero-order vortex half-wave plate.
And the light polarization adjusting element is used for adjusting and controlling the polarization state of the incident light. With this arrangement, the incident light can be adjusted to the target polarized light. For example, the light polarization adjusting element may select a vortex half-wave plate to obtain polarization vector light such as radial, angular, vortex, etc.
And a polarization state monitoring element for monitoring the polarization state of the incident light. By adopting the scheme, the polarization state of incident light can be detected, the polarization state of the current laser can be observed in real time, and finally the target polarization parameter can be obtained; alternatively, feedback control and optimization design may be performed. Preferably, the polarization form monitoring element is a spot analyzer for observing the laser spot pattern. The polarization state is detected by using the polarization state monitoring element, and the polarization state of the polarization state monitoring element is adjusted by combining with the light polarization adjusting element, so that the polarization state monitoring element is further used for preparing the radiation-shaped grating, the ring-shaped grating and the special grating between the radiation-shaped grating and the ring-shaped grating. Preferably, before the laser irradiates the film, the polarization mode of the light spot is determined by a light spot analyzer and a polarization splitting prism so as to correspond to the grating structure to be obtained.
And the scattered light monitoring element is used for detecting the change of the scattered light on the surface of the grating substrate. Preferably, the scattered light monitoring element is an industrial camera, and an image of the laser action process is acquired by the industrial camera, so that the image is used for adjusting the space position of the laser spot acting on the grating substrate and observing the laser action process.
One or more focusing elements, typically lenses, may also be provided to increase the beam density, as desired. For example, a first lens element may be added in front of the surface of the detection grating substrate, and the first lens element is used to focus the laser with adjusted light intensity and to irradiate the laser onto the surface of the film. A second lens element may be placed in front of the scattered light monitoring element to focus the collected laser reflected light onto a fiber optic spectrometer for measurement. Of course, a signal guiding and collecting element can be arranged to collect and output the laser reflected light to the fiber spectrometer or the grating substrate surface according to the requirement. The signal directing and collecting elements are typically beam splitting chips.
As a specific preferred embodiment, an apparatus for manufacturing a fast manufacturing method of a special grating such as a radial grating and a ring grating in a large-area processing manner according to any one of the above technical solutions includes:
the laser emitter is used for providing required laser;
a light polarization adjusting element for adjusting the polarization state of the incident laser light to a desired polarization state;
a light intensity adjusting element for adjusting the energy of the input laser;
and the light spot analyzer is used for observing the required laser light spot mode.
And the polarization beam splitting plate is matched with the vortex half-wave plate and used for observing a required laser spot mode.
And the first lens element focuses and emits the laser with the adjusted light intensity onto the surface to be processed of the grating substrate.
A signal guide and collection element for collecting and outputting the laser reflection light to the second lens element;
and the second lens element focuses the collected laser reflection light to the fiber spectrometer for measurement.
In the invention, the grating structure is continuously irradiated by a beam of focused femtosecond pulse laser, and the growth of oxidation fringes parallel to the polarization direction is realized by utilizing the positive feedback oxidation effect.
The signal directing and collecting elements may generally employ one or more beam splitting chips to direct and collect light by transmitting or reflecting light beams of a particular wavelength.
Preferably, the oxidation stripe grating structure can be in various shapes. By using the method of the invention, the whole area to be processed can be quickly swept by the large laser spot. The light spot can be expanded under the condition of sufficient laser energy, so that the disposable processing in the maximum range can be realized.
A special grating such as a radiation-shaped grating, a ring-shaped grating and the like which can be processed in a large area rapidly is prepared by any one of the manufacturing methods.
In the manufacturing process, laser passes through a zero-order vortex half-wave plate or other components which change the laser mode and then passes through a lens, and the light spot is focused on a sample (grating substrate). During the laser irradiation, the scattered light intensity will gradually change along with the generation and growth of the oxidation stripes. When the transmitted light intensity no longer changes within a specific time (depending on the repetition frequency of the laser), the shape of the transmitted spot no longer changes when viewed by the spot analyzer, indicating that the oxidized streaks have formed a stable structure, and the laser irradiation may be stopped.
The invention firstly utilizes a vacuum sputtering device to plate a metal or semiconductor film with a specific thickness on a substrate. Then, the femtosecond pulse laser is used for irradiating on the sample, so that the sample is oxidized and gradually grows into periodic stripes. In the preparation process, a light spot analyzer is used for detecting the light spot of the transmitted laser, so that the formation process of the oxidation stripe grating structure can be monitored in real time.
In the invention, the femtosecond laser is used for preparing the grating structure, and the outstanding advantage is that any oxidation stripe parallel to polarization can be obtained only by regulating and controlling the polarization mode of the laser. No additional machining process is required. Direct, simple, clear and controllable. Meanwhile, the energy density required by the grating structure of the oxidation stripe is lower than that of long pulse and continuous laser, so that the precise processing of various complex grating structures in a micro-nano range can be realized. In addition, the period of the oxidation stripe grating structure is in direct proportion to the incident wavelength, the grating period can be simply controlled by controlling the incident laser wavelength, and the grating structure is in the sub-wavelength range, so that the process of processing the grating structure in a high-precision micro-nano mode is greatly simplified.
In the invention, femtosecond laser is used for directly irradiating various grating structures with sub-wavelength periods, and the method is a brand new mechanism compared with the method that the grating structures are directly processed by laser, or a model is prepared by micro-nano processing and then the grating is copied, or the grating structures are pressed and etched. The method has the outstanding advantages of being more direct, simpler and more efficient. The grating period is in the sub-wavelength range, so that the processing time, difficulty and cost are greatly reduced.
According to actual requirements, more complex and diversified grating structures can be further designed, and only the laser mode needs to be modulated to be matched with the required grating.
The zero-order vortex half-wave plate generates a structural light field, and adopts single-beam laser exposure to generate sub-wavelength gratings with special shapes such as a ring shape, a radiation shape, a vortex shape and the like on a scale. In the preparation process, the intensity of scattered laser is utilized to realize the real-time monitoring of the stripe formation process.
Drawings
FIG. 1 is a diagram of an apparatus for forming a grating structure by self-organization of oxidation fringes induced by femtosecond laser according to the present invention.
FIG. 2 is a scanning electron microscope image of an oxide stripe grating structure parallel to the polarization direction generated on a 200 nm thick silicon film by the action of a linearly polarized femtosecond laser according to the present invention.
Fig. 3 is a scanning electron microscope picture for verifying feasibility of large-area processing and grating preparation by matching large light spots with the translation stage by manually moving the translation stage on the basis of fig. 2.
Fig. 4-6 are views of the radial polarization, the angular polarization and the counterclockwise polarization generated by changing the zero-order vortex half-wave plate, respectively, of the radiation-shaped grating structure, the circular ring-shaped grating structure and the counterclockwise grating structure under a microscope.
Detailed Description
The invention will be further described with reference to the accompanying drawings in which:
as shown in FIG. 1, a device for forming a grating structure by self-organization of oxidation fringes induced by femtosecond laser. The device comprises a femtosecond laser transmitter, an optical half-wave plate 4, an optical analyzer 5, a vortex half-wave plate 6, a focusing lens 7, an industrial camera 8, a beam splitter plate 9, a polarization beam splitter plate 10 and a light spot analyzer 11.
Wherein the femtosecond laser transmitter is used for providing femtosecond laser 3; the optical half-wave plate 4 and the optical analyzer 5 are matched to continuously change the energy of the laser light so as to obtain the laser light with the required energy. The vortex half-wave plate 6 can adopt a zero-order vortex half-wave plate and is used for converting linear polarization laser into vector light, adjusting the mode of the laser to be radial, angular or anticlockwise vortex, reflecting one part of incident vector light to the polarization beam splitter 10 by combining the beam splitter 9, and finally determining the polarization state of the vector light through the polarization beam splitter 10 and the light spot analyzer 11. The laser light transmitted through the beam splitting plate 9 is focused onto the silicon film 2 adhered to the substrate 1 via the focusing lens 7.
In this example, the focal length of the focusing lens 7 is 20 cm, and the repetition frequency of the laser light 3 is not limited. The silicon film 2 of the substrate 1 constitutes the main structure of the grating substrate, and in this example, a silicon film with a thickness of 200 nm is prepared on a sapphire substrate with a thickness of 500 microns by using a magnetron sputtering coating device.
In the process, when the low-energy laser is focused on the flat silicon film surface in the initial stage, the low-energy laser is mainly reflected by the silicon film, so that scattered light is hardly detected by the industrial camera 8 in the lateral direction. After rotating the optical half-wave plate 4 to gradually increase the energy of the incident laser light until the oxidation threshold of silicon, a small amount of oxide particles appear on the surface of the silicon film, at which time the enhancement of scattered light can be observed in real time by the industrial camera 8. The incident laser energy is kept constant and the scattered spot variation captured in the industrial camera 8 is detected. After the scattered light spot is substantially unchanged with a gradual increase in the number of irradiation pulses, the laser irradiation is stopped.
At the same time, the polarization state of the input light is detected by using the light spot analyzer 11, and the final polarization state data is recorded.
The silicon film was then observed by scanning electron microscopy to show periodically varying striations. In this example, the threshold of the laser to form regular stripes on a 200 nm thick scale is 0.028J/cm2. Therefore, the mechanism of formation of such regular stripes is completely different from that of conventional laser ablation because the ablation threshold of silicon is 0.2J/cm2。
As shown in FIG. 2, the single-beam linear polarization has a wavelength of 1030nm, a repetition frequency of 5KHz, and an energy density of 0.03J/cm2After the femtosecond laser irradiation (in this scheme, the vortex half-wave plate 6 is not arranged, the gaussian laser mode is directly adopted, and the diameter of a light spot at a focus is 120 micrometers), a scanning electron microscope image of a regular grating structure with a period of 950 nanometers is formed on a silicon film with the thickness of 200 nanometers (see (a) in fig. 2). The rectangular region in (a) was subjected to elemental composition analysis using the EDX function of a scanning electron microscope (see (b) and (c) in fig. 2), and after scanning analysis, it was revealed that we formed thisThe periodic structure of each stripe is composed of silicon (c) and oxygen (b) and is in the form of silicon oxide, and further proves that the forming mechanism of the regular stripes in the invention is completely different from the traditional laser ablation.
Fig. 3 is a scanning electron microscope picture for verifying feasibility of large-area processing and grating preparation by matching large light spots with the translation stage by manually moving the translation stage on the basis of fig. 2.
When the mode of the laser is adjusted to radial, angular and anticlockwise spiral by the rotary vortex half-wave plate 6, radial, annular and spiral gratings are generated respectively.
As shown in fig. 4, a scanning electron microscope image (see fig. 4 (a)) of a radiation-shaped regular grating structure formed on a silicon film with a thickness of 200 nm is obtained by adjusting the laser mode to a radial direction by using a vortex half-wave plate 6, wherein the wavelength is 1030nm, and the repetition frequency is 5 KHz; wherein (b) in fig. 4 is a partially enlarged view of a rectangular portion in (a).
As shown in fig. 5, a scanning electron microscope image (see fig. 5 (a)) of an annular regular grating structure formed on a silicon film with a thickness of 200 nm is obtained by adjusting the mode of the laser to an angular direction by using a vortex half-wave plate 6, the wavelength is 1030nm, and the repetition frequency is 5 KHz; wherein (b) in fig. 5 is a partially enlarged view of a rectangular portion in (a).
As shown in fig. 6, a vortex half-wave plate 6 is used to adjust the mode of the laser to be a counterclockwise vortex, the wavelength is 1030nm, the repetition frequency is 5KHz, and a scanning electron microscope image of a vortex-shaped regular grating structure formed on a silicon film with the thickness of 200 nanometers (see fig. 6 (a)) is obtained; wherein (b) in fig. 6 is a partially enlarged view of a rectangular portion in (a).
At present, the laser-induced metal and semiconductor object surface can only randomly generate a plurality of uncontrollable periodic self-organized nano structures, or the self-organized oxidation stripes are generated on the surface inefficiently and singly by utilizing a point-by-point scanning method similar to laser direct writing. The key problems limit the capability and application range of micro-nano processing by femtosecond laser. The invention can realize the large-area preparation with controllable laser-induced surface nano structure and high efficiency, and has low cost, higher innovation and extremely high commercial application value.
Claims (10)
1. A method for processing a grating, comprising: irradiating the surface of a region to be processed of the grating substrate by using laser to promote the surface of the region to generate oxidation reaction so as to obtain grating stripes with the stripe direction parallel to the polarization direction of the laser; the energy density of the laser irradiated on the surface of the area to be processed of the grating substrate is lower than an ablation threshold value of ablation of the surface and is larger than or equal to an oxidation threshold value of oxidation reaction of the surface.
2. The method of claim 1, wherein the grating substrate contains a substance that can undergo an oxidation reaction under the action of the laser beam; or the grating base material comprises a substrate and a thin film covered on one side of the substrate, and the thin film contains substances capable of generating oxidation reaction under the action of the laser.
3. The method of claim 2, wherein the substance is a metal or semiconductor material.
4. The method of claim 2, wherein the material is selected from one or more of silicon, titanium, tungsten, and titanium nitride.
5. The method of claim 1, wherein the polarization adjustment element is used to adjust the polarization state of the incident laser beam during processing, and the grating structures with different shapes are generated by adjusting the polarization state of the incident laser beam.
6. The method of claim 5 wherein the light polarization adjusting element is a vortex half-wave plate.
7. The method of claim 1, wherein the laser is a femtosecond pulse laser; the laser energy is distributed into Gaussian spots, flat-top spots or Laguerre-Gaussian hollow hole spots, and the laser energy is used for irradiating the surface of the area to be processed of the grating substrate after being focused.
8. A method of fabricating a grating as claimed in claim 1, wherein the period of the grating fringes during fabrication is related to the wavelength of the incident light or/and the thickness of the material containing said substance; the area where the grating stripes are generated is related to the laser action area.
9. An apparatus for producing a grating using the method of claim 1, comprising:
a laser transmitter for providing laser light;
a light intensity adjusting element for adjusting the energy of the laser;
and the focusing element is used for focusing and injecting the laser with the adjusted energy to the surface of the grating substrate.
10. The apparatus for producing a grating of claim 9 further comprising any one of the following elements or a combination or integration of two or more of the following elements:
a diffractive optical element that converts incident laser light into a target optical mode;
a light polarization adjusting element for adjusting and controlling the polarization state of the laser;
a polarization state monitoring element for monitoring the polarization state of the laser;
and the scattered light monitoring element is used for detecting the change of the scattered light on the surface of the region to be processed of the grating substrate.
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Inventor after: Qiu Min Inventor after: Geng Jiao Inventor after: Shi Liping Inventor after: Fang Xiaoguo Inventor before: Geng Jiao Inventor before: Shi Liping Inventor before: Fang Xiaoguo Inventor before: Qiu Min |
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Application publication date: 20210803 |