CN113178929B - Power device and battery management system - Google Patents
Power device and battery management system Download PDFInfo
- Publication number
- CN113178929B CN113178929B CN202110548079.1A CN202110548079A CN113178929B CN 113178929 B CN113178929 B CN 113178929B CN 202110548079 A CN202110548079 A CN 202110548079A CN 113178929 B CN113178929 B CN 113178929B
- Authority
- CN
- China
- Prior art keywords
- transistor
- detection
- discharge
- current
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0047—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with monitoring or indicating devices or circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0013—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries acting upon several batteries simultaneously or sequentially
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00304—Overcurrent protection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Secondary Cells (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
本公开提供一种功率器件,功率器件用于检测电池组的充电电流和放电电流,功率器件包括:放电控制晶体管和充电控制晶体管,放电控制晶体管和充电控制晶体管串联构成控制串联电路,并且串联电路连接在电池组侧与负载/充电器侧之间的电流回路中;充电检测晶体管,充电检测晶体管的漏极与充电控制晶体管的漏极连接,充电检测晶体管的源极作为充电电流检测端;放电检测晶体管,放电检测晶体管的漏极与放电控制晶体管的漏极连接,放电检测晶体管的源极作为放电电流检测端。本公开还提供了一种电池管理系统。
The present disclosure provides a power device, which is used to detect the charging current and discharging current of a battery pack. The power device includes: a discharge control transistor and a charge control transistor, which are connected in series to form a control series circuit, and the series circuit is connected in a current loop between the battery pack side and the load/charger side; a charge detection transistor, the drain of the charge detection transistor is connected to the drain of the charge control transistor, and the source of the charge detection transistor is used as a charge current detection terminal; a discharge detection transistor, the drain of the discharge detection transistor is connected to the drain of the discharge control transistor, and the source of the discharge detection transistor is used as a discharge current detection terminal. The present disclosure also provides a battery management system.
Description
技术领域Technical Field
本公开提供了一种功率器件及电池管理系统。The present disclosure provides a power device and a battery management system.
背景技术Background Art
目前可充电电池广泛地用于各个领域,通过可充电电池为负载提供电能,并且也可以通过充电器来为可充电电池进行充电。Currently, rechargeable batteries are widely used in various fields. Rechargeable batteries are used to provide electrical energy to loads, and rechargeable batteries can also be charged by chargers.
在可充电电池的充放电过程中,充电电流或放电电流过大,可能会导致安全事故的发生,因此需要对可充电电池的充电电流和放电电流进行检测,以便避免安全事故的发生。During the charging and discharging process of a rechargeable battery, excessive charging current or discharging current may cause a safety accident. Therefore, it is necessary to detect the charging current and discharging current of the rechargeable battery to avoid the occurrence of safety accidents.
在现有技术的电流检测过程中,如果采用大的检测电流的检测电路,则对后续电路将会提出很高的要求,如果采用小电流进行检测的情况下,存在检测精度不高的情况。In the current detection process of the prior art, if a detection circuit with a large detection current is used, very high requirements will be placed on the subsequent circuits. If a small current is used for detection, the detection accuracy is not high.
发明内容Summary of the invention
为了解决上述技术问题之一,本公开提供了一种功率器件及电池管理系统。In order to solve one of the above technical problems, the present disclosure provides a power device and a battery management system.
根据本公开的一个方面,一种功率器件,所述功率器件用于检测电池组的充电电流和放电电流,所述功率器件包括:According to one aspect of the present disclosure, a power device is provided, the power device being used to detect a charging current and a discharging current of a battery pack, the power device comprising:
放电控制晶体管和充电控制晶体管,所述放电控制晶体管和充电控制晶体管串联构成控制串联电路,并且所述串联电路连接在电池组侧与负载/充电器侧之间的电流回路中;A discharge control transistor and a charge control transistor, wherein the discharge control transistor and the charge control transistor are connected in series to form a control series circuit, and the series circuit is connected in a current loop between the battery pack side and the load/charger side;
充电检测晶体管,所述充电检测晶体管的漏极与充电控制晶体管的漏极连接,所述充电检测晶体管的源极作为充电电流检测端;A charging detection transistor, wherein the drain of the charging detection transistor is connected to the drain of the charging control transistor, and the source of the charging detection transistor serves as a charging current detection terminal;
放电检测晶体管,所述放电检测晶体管的漏极与放电控制晶体管的漏极连接,所述放电检测晶体管的源极作为放电电流检测端;以及a discharge detection transistor, wherein the drain of the discharge detection transistor is connected to the drain of the discharge control transistor, and the source of the discharge detection transistor serves as a discharge current detection terminal; and
采样单元,所述采样单元分别与放电电流检测端和充电电流检测端连接,A sampling unit, wherein the sampling unit is connected to the discharge current detection terminal and the charge current detection terminal respectively,
其中,采样单元包括与所述放电电流检测端连接的放电采样支路和与所述充电电流检测端连接的充电采样支路,并且所述采样单元包括采样电阻,当进行放电电流采样时根据所述采样电阻所生成的电压来采集放电电流,当进行充电电流采样时根据所述采样电阻所生成的电压来采集充电电流。Among them, the sampling unit includes a discharge sampling branch connected to the discharge current detection end and a charging sampling branch connected to the charging current detection end, and the sampling unit includes a sampling resistor. When the discharge current is sampled, the discharge current is sampled according to the voltage generated by the sampling resistor, and when the charging current is sampled, the charging current is sampled according to the voltage generated by the sampling resistor.
根据本公开的至少一个实施方式,所述放电采样支路包括第一电压固定电路和第一电流镜电路,According to at least one embodiment of the present disclosure, the discharge sampling branch includes a first voltage fixing circuit and a first current mirror circuit.
所述第一电压固定电路与所述放电电流检测端直接或间接连接,并且所述第一电压固定电路使得所述放电检测晶体管的源极电压等于所述放电控制晶体管的源极电压,并且所述第一电压固定电路允许所述放电检测晶体管检测的放电检测电流流至所述第一电流镜电路中,所述第一电流镜电路用于将所述放电检测电流镜像至所述采样电阻。The first voltage fixing circuit is directly or indirectly connected to the discharge current detection terminal, and the first voltage fixing circuit makes the source voltage of the discharge detection transistor equal to the source voltage of the discharge control transistor, and the first voltage fixing circuit allows the discharge detection current detected by the discharge detection transistor to flow into the first current mirror circuit, and the first current mirror circuit is used to mirror the discharge detection current to the sampling resistor.
根据本公开的至少一个实施方式,所述第一电压固定电路包括第一运算放大器和第一PMOS晶体管,所述第一PMOS晶体管的源极与所述放电检测晶体管的源极连接,所述第一运算放大器的输出端与所述第一PMOS晶体管的栅极连接,并且所述第一运算放大器的正输入端连接所述电池组的负压端,所述第一运算放大器的负输入端与所述第一PMOS晶体管的源极连接,所述第一PMOS晶体管的漏极连接所述第一电流镜电路流入端。According to at least one embodiment of the present disclosure, the first voltage fixing circuit includes a first operational amplifier and a first PMOS transistor, the source of the first PMOS transistor is connected to the source of the discharge detection transistor, the output of the first operational amplifier is connected to the gate of the first PMOS transistor, and the positive input of the first operational amplifier is connected to the negative voltage end of the battery pack, the negative input of the first operational amplifier is connected to the source of the first PMOS transistor, and the drain of the first PMOS transistor is connected to the inflow end of the first current mirror circuit.
根据本公开的至少一个实施方式,所述充电采样支路包括第二电压固定电路、第二电流镜电路和第三电流镜电路,According to at least one embodiment of the present disclosure, the charging sampling branch includes a second voltage fixing circuit, a second current mirror circuit and a third current mirror circuit.
所述第二电压固定电路与所述充电电流检测端直接或间接连接,并且所述第二电压固定电路使得所述充电检测晶体管的源极电压等于所述充电控制晶体管的源极电压,并且所述第二电压固定电路允许所述充电检测晶体管检测的充电检测电流流至所述第二电流镜电路中,所述第二电流镜电路用于将所述充电检测电流镜像至所述第三电流镜电路,所述第三电流镜电路用于将所述充电检测电流镜像至所述采样电阻。The second voltage fixing circuit is directly or indirectly connected to the charging current detection terminal, and the second voltage fixing circuit makes the source voltage of the charging detection transistor equal to the source voltage of the charging control transistor, and the second voltage fixing circuit allows the charging detection current detected by the charging detection transistor to flow into the second current mirror circuit, the second current mirror circuit is used to mirror the charging detection current to the third current mirror circuit, and the third current mirror circuit is used to mirror the charging detection current to the sampling resistor.
根据本公开的至少一个实施方式,所述第二电压固定电路包括第二运算放大器和第二PMOS晶体管,所述第二PMOS晶体管的源极与所述充电检测晶体管的源极连接,所述第二运算放大器的输出端与所述第二PMOS晶体管的栅极连接,并且所述第二运算放大器的正输入端连接所述负载/充电器侧的负压端,所述第二运算放大器的负输入端与所述第二PMOS晶体管的源极连接,所述第二PMOS晶体管的漏极连接所述第二电流镜电路的流入端。According to at least one embodiment of the present disclosure, the second voltage fixing circuit includes a second operational amplifier and a second PMOS transistor, the source of the second PMOS transistor is connected to the source of the charging detection transistor, the output of the second operational amplifier is connected to the gate of the second PMOS transistor, and the positive input of the second operational amplifier is connected to the negative voltage end of the load/charger side, the negative input of the second operational amplifier is connected to the source of the second PMOS transistor, and the drain of the second PMOS transistor is connected to the inflow end of the second current mirror circuit.
根据本公开的至少一个实施方式,还包括:According to at least one embodiment of the present disclosure, the method further includes:
第一电荷泵电路和第二电荷泵电路,所述第一电荷泵电路生成低于所述电池组的负压端电压的电压并且提供至所述第一电流镜电路的流出端,所述第二电荷泵电路生成低于所述负载/充电器侧的负压端电压的电压并且提供至所述第二电流镜电路的流出端;或者a first charge pump circuit and a second charge pump circuit, wherein the first charge pump circuit generates a voltage lower than the negative voltage terminal voltage of the battery pack and provides the voltage to the outflow terminal of the first current mirror circuit, and the second charge pump circuit generates a voltage lower than the negative voltage terminal voltage of the load/charger side and provides the voltage to the outflow terminal of the second current mirror circuit; or
一个电荷泵电路,所述一个电荷泵电路生成低于所述电池组的负压端电压且低于所述负载/充电器侧的负压端电压的电压,并且提供至所述第一电流镜电路和第二电流镜电路的流出端。A charge pump circuit generates a voltage lower than the negative voltage terminal voltage of the battery pack and lower than the negative voltage terminal voltage of the load/charger side, and provides the voltage to the outflow terminals of the first current mirror circuit and the second current mirror circuit.
根据本公开的至少一个实施方式,所述放电采样支路包括第一电压固定电路和第一电流镜电路,According to at least one embodiment of the present disclosure, the discharge sampling branch includes a first voltage fixing circuit and a first current mirror circuit.
所述第一电压固定电路与所述放电电流检测端直接或间接连接,并且所述第一电压固定电路使得所述放电检测晶体管的源极电压等于所述放电控制晶体管的源极电压,并且所述第一电压固定电路允许所述放电检测晶体管检测的放电检测电流流至所述第一电流镜电路中,所述第一电流镜电路用于将所述放电检测电流镜像至所述采样电阻。The first voltage fixing circuit is directly or indirectly connected to the discharge current detection terminal, and the first voltage fixing circuit makes the source voltage of the discharge detection transistor equal to the source voltage of the discharge control transistor, and the first voltage fixing circuit allows the discharge detection current detected by the discharge detection transistor to flow into the first current mirror circuit, and the first current mirror circuit is used to mirror the discharge detection current to the sampling resistor.
根据本公开的至少一个实施方式,所述第一电压固定电路包括第一运算放大器和第一NMOS晶体管,所述第一NMOS晶体管的源极与所述放电检测晶体管的源极连接,所述第一运算放大器的输出端与所述第一NMOS晶体管的栅极连接,并且所述第一运算放大器的正输入端连接所述电池组的负压端,所述第一运算放大器的负输入端与所述第一NMOS晶体管的源极连接,所述第一NMOS晶体管的漏极连接所述第一电流镜电路的输出端。According to at least one embodiment of the present disclosure, the first voltage fixing circuit includes a first operational amplifier and a first NMOS transistor, the source of the first NMOS transistor is connected to the source of the discharge detection transistor, the output of the first operational amplifier is connected to the gate of the first NMOS transistor, and the positive input of the first operational amplifier is connected to the negative voltage end of the battery pack, the negative input of the first operational amplifier is connected to the source of the first NMOS transistor, and the drain of the first NMOS transistor is connected to the output of the first current mirror circuit.
根据本公开的至少一个实施方式,所述充电采样支路包括第二电压固定电路,所述第二电压固定电路与所述充电电流检测端直接或间接连接,并且所述第二电压固定电路使得所述充电检测晶体管的源极电压等于所述充电控制晶体管的源极电压,并且所述第二电压固定电路允许所述充电检测晶体管检测的充电检测电流流至所述采样电阻。According to at least one embodiment of the present disclosure, the charging sampling branch includes a second voltage fixing circuit, which is directly or indirectly connected to the charging current detection terminal, and the second voltage fixing circuit makes the source voltage of the charging detection transistor equal to the source voltage of the charging control transistor, and the second voltage fixing circuit allows the charging detection current detected by the charging detection transistor to flow to the sampling resistor.
根据本公开的至少一个实施方式,所述第二电压固定电路包括第二运算放大器和第二NMOS晶体管,所述第二NMOS晶体管的源极与所述充电检测晶体管的源极连接,所述第二运算放大器的输出端与所述第二NMOS晶体管的栅极连接,并且所述第二运算放大器的正输入端连接所述负载/充电器的负压端,所述第二运算放大器的负输入端与所述第二NMOS晶体管的源极连接,所述第二NMOS晶体管的漏极连接所述采样电阻。According to at least one embodiment of the present disclosure, the second voltage fixing circuit includes a second operational amplifier and a second NMOS transistor, the source of the second NMOS transistor is connected to the source of the charging detection transistor, the output of the second operational amplifier is connected to the gate of the second NMOS transistor, and the positive input of the second operational amplifier is connected to the negative voltage terminal of the load/charger, the negative input of the second operational amplifier is connected to the source of the second NMOS transistor, and the drain of the second NMOS transistor is connected to the sampling resistor.
根据本公开的至少一个实施方式,还包括第三运算放大器,所述第三运算放大器的一个输入端和输入端之间连接所述采样电阻,所述第三运算放大器的另一输入端连接第一电压,所述第一电压的电压值小于供电电压和大于接地电压。According to at least one embodiment of the present disclosure, a third operational amplifier is further included, wherein the sampling resistor is connected between one input terminal and the input terminal of the third operational amplifier, and the other input terminal of the third operational amplifier is connected to a first voltage, wherein the voltage value of the first voltage is less than the power supply voltage and greater than the ground voltage.
根据本公开的至少一个实施方式,所述第一电压为共模电压;和/或所述采样电阻并联有滤波电容。According to at least one embodiment of the present disclosure, the first voltage is a common mode voltage; and/or the sampling resistor is connected in parallel with a filter capacitor.
根据本公开的至少一个实施方式,所述充电检测晶体管的沟道长宽比与所述充电控制晶体管的沟道长宽比为1:M,其中M大于1。According to at least one embodiment of the present disclosure, a channel length-to-width ratio of the charge detection transistor and a channel length-to-width ratio of the charge control transistor are 1:M, where M is greater than 1.
根据本公开的至少一个实施方式,所述充电检测晶体管的数量为N个,其中N为大于等于1的整数,第N个充电检测晶体管的沟道长宽比与所述充电控制晶体管的沟道长宽比为1:M的N-1次方。According to at least one embodiment of the present disclosure, the number of the charging detection transistors is N, where N is an integer greater than or equal to 1, and the channel aspect ratio of the Nth charging detection transistor and the channel aspect ratio of the charging control transistor are 1:M to the N-1th power.
根据本公开的至少一个实施方式,所述充电控制晶体管和所述充电检测晶体管为NMOS晶体管,并且M值为为100。According to at least one embodiment of the present disclosure, the charge control transistor and the charge detection transistor are NMOS transistors, and the M value is 100.
根据本公开的至少一个实施方式,所述放电检测晶体管的数量为N个,其中N为大于等于1的整数,第N个放电检测晶体管的沟道长宽比与所述放电控制晶体管的沟道长宽比为1:M的N-1次方。According to at least one embodiment of the present disclosure, the number of the discharge detection transistors is N, where N is an integer greater than or equal to 1, and the channel aspect ratio of the Nth discharge detection transistor and the channel aspect ratio of the discharge control transistor are 1:M to the N-1th power.
根据本公开的至少一个实施方式,所述放电控制晶体管和所述放电检测晶体管为NMOS晶体管,并且M值为100。According to at least one embodiment of the present disclosure, the discharge control transistor and the discharge detection transistor are NMOS transistors, and the M value is 100.
根据本公开的至少一个实施方式,所述充电控制晶体管、充电检测晶体管、放电控制晶体管和放电检测晶体管的栅极和源极之间连接有齐纳二极管。According to at least one embodiment of the present disclosure, a Zener diode is connected between the gate and the source of the charge control transistor, the charge detection transistor, the discharge control transistor, and the discharge detection transistor.
根据本公开的至少一个实施方式,所述充电控制晶体管和充电检测晶体管的栅极分别通过电阻连接至充电控制信号和充电检测控制信号,所述充电控制信号和充电检测控制信号为同一个控制信号或者为不同的控制信号,和/或N个充电检测晶体管的充电检测控制信号为相同的控制信号或者为不同的控制信号;以及According to at least one embodiment of the present disclosure, the gates of the charge control transistor and the charge detection transistor are respectively connected to a charge control signal and a charge detection control signal through resistors, the charge control signal and the charge detection control signal are the same control signal or different control signals, and/or the charge detection control signals of the N charge detection transistors are the same control signal or different control signals; and
所述放电控制晶体管和放电检测晶体管的栅极分别通过电阻连接至放电控制信号和放电检测控制信号,所述放电控制信号和放电检测控制信号为同一个控制信号或者为不同的控制信号,和/或N个放电检测晶体管的放电检测控制信号为相同的控制信号或者为不同的控制信号。The gates of the discharge control transistor and the discharge detection transistor are respectively connected to a discharge control signal and a discharge detection control signal through resistors, and the discharge control signal and the discharge detection control signal are the same control signal or different control signals, and/or the discharge detection control signals of the N discharge detection transistors are the same control signal or different control signals.
根据本公开的至少一个实施方式,还包括第一选通单元和第二选通单元,所述第一选通单元分别与N个放电检测晶体管连接,以便通过第一选通单元来切换所述N个放电检测晶体管连接;所述第二选通单元分别与N个充电检测晶体管连接,以便通过第二选通单元来切换所述N个充电检测晶体管连接。According to at least one embodiment of the present disclosure, it also includes a first gating unit and a second gating unit, the first gating unit is respectively connected to N discharge detection transistors so that the N discharge detection transistors are switched through the first gating unit; the second gating unit is respectively connected to N charge detection transistors so that the N charge detection transistors are switched through the second gating unit.
根据本公开的另一方面,一种电池管理系统,包括:According to another aspect of the present disclosure, a battery management system includes:
如上任一项所述的功率器件;A power device as described in any one of the above items;
电流采集单元,所述电流采集单元连接所述功率器件的所述充电电流检测端和所述放电电流检测端,以便采集所述电池组的充电电流和放电电流。A current collection unit, wherein the current collection unit is connected to the charging current detection terminal and the discharging current detection terminal of the power device so as to collect the charging current and the discharging current of the battery pack.
根据本公开的至少一个实施方式,还包括:According to at least one embodiment of the present disclosure, the method further includes:
控制单元,所述控制单元向所述功率器件提供所述充电控制信号、充电检测控制信号、放电控制信号和放电检测控制信号,以便控制所述电池组的充电和放电。A control unit provides the charging control signal, the charging detection control signal, the discharging control signal and the discharging detection control signal to the power device so as to control the charging and discharging of the battery pack.
根据本公开的至少一个实施方式,当所述功率器件包括N个充电检测晶体管和/或N个放电检测晶体管的情况下,所述电池管理系统还包括选通单元,并且所述选通单元选择所述N个充电检测晶体管和/或N个放电检测晶体管中的一个充电检测晶体管和/或一个放电检测晶体管来得到充电电流和/或放电电流的电流检测信号。According to at least one embodiment of the present disclosure, when the power device includes N charging detection transistors and/or N discharge detection transistors, the battery management system also includes a gating unit, and the gating unit selects one charging detection transistor and/or one discharge detection transistor among the N charging detection transistors and/or the N discharge detection transistors to obtain a current detection signal of the charging current and/or the discharging current.
根据本公开的至少一个实施方式,还包括检测电流判断单元,所述检测电流判断单元用于判断电流检测信号的大小,并且所述选通单元基于电流检测信号的大小来选择所述N个充电检测晶体管和/或N个放电检测晶体管中的一个充电检测晶体管和/或一个放电检测晶体管。According to at least one embodiment of the present disclosure, it also includes a detection current judgment unit, which is used to judge the size of the current detection signal, and the selection unit selects one charging detection transistor and/or one discharge detection transistor among the N charging detection transistors and/or the N discharge detection transistors based on the size of the current detection signal.
根据本公开的至少一个实施方式,还包括模数转换单元,所述模数转换单元将所述电流采集单元的输出信号转换为数字信号。According to at least one embodiment of the present disclosure, the system further includes an analog-to-digital conversion unit, which converts the output signal of the current acquisition unit into a digital signal.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
附图示出了本公开的示例性实施方式,并与其说明一起用于解释本公开的原理,其中包括了这些附图以提供对本公开的进一步理解,并且附图包括在本说明书中并构成本说明书的一部分。The accompanying drawings illustrate exemplary embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. These drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification.
图1示出了根据本公开的一个实施方式的电池管理系统的示意图。FIG. 1 shows a schematic diagram of a battery management system according to an embodiment of the present disclosure.
图2示出了根据本公开的一个实施方式的采样单元的电路图。FIG. 2 shows a circuit diagram of a sampling unit according to an embodiment of the present disclosure.
图3示出了根据本公开的一个实施方式的采样单元的电路图。FIG. 3 shows a circuit diagram of a sampling unit according to an embodiment of the present disclosure.
图4示出了根据本公开的一个实施方式的采样单元的电路图。FIG. 4 shows a circuit diagram of a sampling unit according to an embodiment of the present disclosure.
图5示出了根据本公开的一个实施方式的采样单元的电路图。FIG. 5 shows a circuit diagram of a sampling unit according to an embodiment of the present disclosure.
图6示出了根据本公开的一个实施方式的功率器件的示意图。FIG. 6 shows a schematic diagram of a power device according to an embodiment of the present disclosure.
图7示出了根据本公开的一个实施方式的电池管理系统的示意图。FIG. 7 shows a schematic diagram of a battery management system according to an embodiment of the present disclosure.
图8示出了根据本公开的一个实施方式的电池管理系统的示意图。FIG8 shows a schematic diagram of a battery management system according to an embodiment of the present disclosure.
图9示出了根据本公开的一个实施方式的用电设备的示意图。FIG. 9 shows a schematic diagram of an electric device according to an embodiment of the present disclosure.
图10示出了根据本公开的一个实施方式的功率器件的示意图。FIG. 10 shows a schematic diagram of a power device according to an embodiment of the present disclosure.
图11示出了根据本公开的一个实施方式的功率器件的示意图。FIG. 11 shows a schematic diagram of a power device according to an embodiment of the present disclosure.
具体实施方式DETAILED DESCRIPTION
下面结合附图和实施方式对本公开作进一步的详细说明。可以理解的是,此处所描述的具体实施方式仅用于解释相关内容,而非对本公开的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本公开相关的部分。The present disclosure is further described in detail below in conjunction with the accompanying drawings and implementations. It is understood that the specific implementations described herein are only used to explain the relevant content, rather than to limit the present disclosure. It should also be noted that, for ease of description, only the parts related to the present disclosure are shown in the accompanying drawings.
需要说明的是,在不冲突的情况下,本公开中的实施方式及实施方式中的特征可以相互组合。下面将参考附图并结合实施方式来详细说明本公开的技术方案。It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in the present disclosure can be combined with each other. The technical solution of the present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
除非另有说明,否则示出的示例性实施方式/实施例将被理解为提供可以在实践中实施本公开的技术构思的一些方式的各种细节的示例性特征。因此,除非另有说明,否则在不脱离本公开的技术构思的情况下,各种实施方式/实施例的特征可以另外地组合、分离、互换和/或重新布置。Unless otherwise specified, the exemplary embodiments/embodiments shown will be understood as providing exemplary features of various details of some ways in which the technical concept of the present disclosure can be implemented in practice. Therefore, unless otherwise specified, the features of the various embodiments/embodiments can be combined, separated, interchanged and/or rearranged without departing from the technical concept of the present disclosure.
在附图中使用交叉影线和/或阴影通常用于使相邻部件之间的边界变得清晰。如此,除非说明,否则交叉影线或阴影的存在与否均不传达或表示对部件的具体材料、材料性质、尺寸、比例、示出的部件之间的共性和/或部件的任何其它特性、属性、性质等的任何偏好或者要求。此外,在附图中,为了清楚和/或描述性的目的,可以夸大部件的尺寸和相对尺寸。当可以不同地实施示例性实施例时,可以以不同于所描述的顺序来执行具体的工艺顺序。例如,可以基本同时执行或者以与所描述的顺序相反的顺序执行两个连续描述的工艺。此外,同样的附图标记表示同样的部件。The use of cross-hatching and/or shading in the accompanying drawings is generally used to make the boundaries between adjacent components clear. As such, unless otherwise specified, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for the specific materials, material properties, dimensions, proportions, commonalities between the components shown, and/or any other characteristics, attributes, properties, etc. of the components. In addition, in the accompanying drawings, the sizes and relative sizes of the components may be exaggerated for clarity and/or descriptive purposes. When the exemplary embodiments can be implemented differently, the specific process sequence can be performed in a different order than described. For example, two successively described processes can be performed substantially simultaneously or in an order opposite to the described order. In addition, the same figure numbers represent the same components.
当一个部件被称作“在”另一部件“上”或“之上”、“连接到”或“结合到”另一部件时,该部件可以直接在所述另一部件上、直接连接到或直接结合到所述另一部件,或者可以存在中间部件。然而,当部件被称作“直接在”另一部件“上”、“直接连接到”或“直接结合到”另一部件时,不存在中间部件。为此,术语“连接”可以指物理连接、电气连接等,并且具有或不具有中间部件。When a component is referred to as being "on" or "over," "connected to," or "coupled to" another component, the component may be directly on, directly connected to, or directly coupled to the other component, or intervening components may be present. However, when a component is referred to as being "directly on," "directly connected to," or "directly coupled to" another component, there are no intervening components. For this purpose, the term "connected" may refer to a physical connection, an electrical connection, etc., with or without intervening components.
为了描述性目的,本公开可使用诸如“在……之下”、“在……下方”、“在……下”、“下”、“在……上方”、“上”、“在……之上”、“较高的”和“侧(例如,如在“侧壁”中)”等的空间相对术语,从而来描述如附图中示出的一个部件与另一(其它)部件的关系。除了附图中描绘的方位之外,空间相对术语还意图包含设备在使用、操作和/或制造中的不同方位。例如,如果附图中的设备被翻转,则被描述为“在”其它部件或特征“下方”或“之下”的部件将随后被定位为“在”所述其它部件或特征“上方”。因此,示例性术语“在……下方”可以包含“上方”和“下方”两种方位。此外,设备可被另外定位(例如,旋转90度或者在其它方位处),如此,相应地解释这里使用的空间相对描述语。For descriptive purposes, the present disclosure may use spatially relative terms such as "under," "beneath," "under," "down," "over," "upper," "above," "higher," and "side (e.g., as in "sidewall")," to describe the relationship of one component to another (other) component as shown in the accompanying drawings. The spatially relative terms are intended to encompass different orientations of the device in use, operation, and/or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, components described as "under" or "beneath" other components or features would subsequently be positioned "over" the other components or features. Thus, the exemplary term "under" can encompass both the "above" and "below" orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.
这里使用的术语是为了描述具体实施例的目的,而不意图是限制性的。如这里所使用的,除非上下文另外清楚地指出,否则单数形式“一个(种、者)”和“所述(该)”也意图包括复数形式。此外,当在本说明书中使用术语“包含”和/或“包括”以及它们的变型时,说明存在所陈述的特征、整体、步骤、操作、部件、组件和/或它们的组,但不排除存在或附加一个或更多个其它特征、整体、步骤、操作、部件、组件和/或它们的组。还要注意的是,如这里使用的,术语“基本上”、“大约”和其它类似的术语被用作近似术语而不用作程度术语,如此,它们被用来解释本领域普通技术人员将认识到的测量值、计算值和/或提供的值的固有偏差。The terms used here are for the purpose of describing specific embodiments, and are not intended to be restrictive. As used here, unless the context clearly indicates otherwise, the singular forms "one (kind, person)" and "said (the)" are also intended to include plural forms. In addition, when the terms "comprise" and/or "include" and their variations are used in this specification, it is explained that there are stated features, integral bodies, steps, operations, parts, assemblies and/or their groups, but it is not excluded that there are or add one or more other features, integral bodies, steps, operations, parts, assemblies and/or their groups. It should also be noted that, as used here, the terms "substantially", "approximately" and other similar terms are used as approximate terms and not as degree terms, so that they are used to explain the inherent deviations of the measured values, calculated values and/or the values provided that will be recognized by those of ordinary skill in the art.
根据本公开的一个实施方式,提供了一种功率器件。该功率器件可以用于检测电池组的充电电流和放电电路。According to one embodiment of the present disclosure, a power device is provided, which can be used to detect a charging current and a discharging current of a battery pack.
图1示出了根据本公开的一个实施例的功率器件。该功率器件可以包括放电控制晶体管1000、充电控制晶体管2000、放电检测晶体管3000、充电检测晶体管4000和采样单元5000。FIG1 shows a power device according to an embodiment of the present disclosure, which may include a discharge control transistor 1000 , a charge control transistor 2000 , a discharge detection transistor 3000 , a charge detection transistor 4000 , and a sampling unit 5000 .
虽然在图1中示出了有多个放电检测晶体管3010、3020、…、30n0和充电检测晶体管4010、4020、…、40n0。但是在本公开中也可以采用一个充电检测晶体管和放电检测晶体管。下面首先将以一个充电检测晶体管和放电检测晶体管为例进行说明。Although FIG1 shows a plurality of discharge detection transistors 3010, 3020, ..., 30n0 and charge detection transistors 4010, 4020, ..., 40n0, one charge detection transistor and one discharge detection transistor may also be used in the present disclosure. The following will first be described by taking one charge detection transistor and one discharge detection transistor as an example.
放电控制晶体管1000和充电控制晶体管2000串联构成控制串联电路,并且串联电路连接在电池组侧与负载/充电器侧之间的电流回路中。例如在本公开中放电控制晶体管1000和充电控制晶体管2000可以为NMOS晶体管,当然本领域的技术人员应当理解,其也可以采用PMOS晶体管。放电控制晶体管1000和充电控制晶体管2000串联构成控制串联电路可以设置在低压侧的回路,而且放电控制晶体管1000和充电控制晶体管2000串联构成控制串联电路可以设置在高压侧的回路中。下面将会以NMOS晶体管且设置低压侧为例进行说明,对于PMOS晶体管、或在设置在高压侧的情况,其原理相同,在此不再赘述。The discharge control transistor 1000 and the charge control transistor 2000 are connected in series to form a control series circuit, and the series circuit is connected in the current loop between the battery pack side and the load/charger side. For example, in the present disclosure, the discharge control transistor 1000 and the charge control transistor 2000 can be NMOS transistors. Of course, those skilled in the art should understand that PMOS transistors can also be used. The discharge control transistor 1000 and the charge control transistor 2000 are connected in series to form a control series circuit that can be set in the loop on the low voltage side, and the discharge control transistor 1000 and the charge control transistor 2000 are connected in series to form a control series circuit that can be set in the loop on the high voltage side. The following will be explained by taking NMOS transistors and setting the low voltage side as an example. For PMOS transistors, or when they are set on the high voltage side, the principle is the same and will not be repeated here.
放电检测晶体管3000的漏极与放电控制晶体管1000的漏极(D端)连接,放电检测晶体管3000的源极作为放电电流检测端。The drain of the discharge detection transistor 3000 is connected to the drain (D terminal) of the discharge control transistor 1000 , and the source of the discharge detection transistor 3000 serves as a discharge current detection terminal.
充电检测晶体管4000的漏极与充电控制晶体管2000的漏极(D端)连接,充电检测晶体管4000的源极作为充电电流检测端。The drain of the charge detection transistor 4000 is connected to the drain (D terminal) of the charge control transistor 2000, and the source of the charge detection transistor 4000 serves as a charge current detection terminal.
采样单元5000分别与放电电流检测端和充电电流检测端连接,其中,采样单元5000包括与放电电流检测端连接的放电采样支路和与充电电流检测端连接的充电采样支路,并且采样单元5000包括采样电阻,当进行放电电流采样时根据采样电阻所生成的电压来采集放电电流,当进行充电电流采样时根据采样电阻所生成的电压来采集充电电流。采样电阻可以是器件的内置电阻,也可以是外接电阻。The sampling unit 5000 is connected to the discharge current detection terminal and the charge current detection terminal respectively, wherein the sampling unit 5000 includes a discharge sampling branch connected to the discharge current detection terminal and a charge sampling branch connected to the charge current detection terminal, and the sampling unit 5000 includes a sampling resistor, and when the discharge current is sampled, the discharge current is sampled according to the voltage generated by the sampling resistor, and when the charge current is sampled, the charge current is sampled according to the voltage generated by the sampling resistor. The sampling resistor can be a built-in resistor of the device or an external resistor.
图2和图3示出了根据本公开的一个实施例的采样单元的电路图。2 and 3 show circuit diagrams of a sampling unit according to an embodiment of the present disclosure.
其中在图2中示出了放电电流检测情况,在图3中示出了充电电流检测情况。FIG. 2 shows a discharge current detection situation, and FIG. 3 shows a charge current detection situation.
放电采样支路包括第一电压固定电路5010和第一电流镜电路5020。第一电压固定电路5010与放电电流检测端(晶体管300的源极)直接或间接连接,并且第一电压固定电路5010使得放电检测晶体管3000的源极电压等于放电控制晶体管1000的源极电压,并且第一电压固定电路5010允许放电检测晶体管3000检测的放电检测电流IDS流至第一电流镜电路5020中,第一电流镜电路5020用于将放电检测电流镜像至采样电阻5030。The discharge sampling branch includes a first voltage fixing circuit 5010 and a first current mirror circuit 5020. The first voltage fixing circuit 5010 is directly or indirectly connected to the discharge current detection terminal (the source of the transistor 300), and the first voltage fixing circuit 5010 makes the source voltage of the discharge detection transistor 3000 equal to the source voltage of the discharge control transistor 1000, and the first voltage fixing circuit 5010 allows the discharge detection current I DS detected by the discharge detection transistor 3000 to flow into the first current mirror circuit 5020, and the first current mirror circuit 5020 is used to mirror the discharge detection current to the sampling resistor 5030.
第一电压固定电路5010包括第一运算放大器5011和第一PMOS晶体管5012,第一PMOS晶体管5012的源极与放电检测晶体管3000的源极连接,第一运算放大器5011的输出端与第一PMOS晶体管5012的栅极连接,并且第一运算放大器5011的正输入端连接电池组的负压端B-,第一运算放大器511的负输入端与第一PMOS晶体管5012的源极连接,第一PMOS晶体管5012的漏极连接第一电流镜电路5020流入端。The first voltage fixing circuit 5010 includes a first operational amplifier 5011 and a first PMOS transistor 5012, the source of the first PMOS transistor 5012 is connected to the source of the discharge detection transistor 3000, the output of the first operational amplifier 5011 is connected to the gate of the first PMOS transistor 5012, and the positive input of the first operational amplifier 5011 is connected to the negative voltage terminal B- of the battery pack, the negative input of the first operational amplifier 511 is connected to the source of the first PMOS transistor 5012, and the drain of the first PMOS transistor 5012 is connected to the inflow end of the first current mirror circuit 5020.
第一电流镜电路包括NMOS晶体管5021和NMOS晶体管5022,其中NMOS晶体管5021和NMOS晶体管5022的栅极连接,NMOS晶体管5021的漏极连接第一电压固定电路5010的输出端,NMOS晶体管5021的源极连接-VDD端,NMOS晶体管5022的源极连接-VDD端,NMOS晶体管5022的漏极连接采样电阻5030的一端,采样电阻5030的另一端可以接地。The first current mirror circuit includes an NMOS transistor 5021 and an NMOS transistor 5022, wherein the gates of the NMOS transistor 5021 and the NMOS transistor 5022 are connected, the drain of the NMOS transistor 5021 is connected to the output end of the first voltage fixing circuit 5010, the source of the NMOS transistor 5021 is connected to the -VDD end, the source of the NMOS transistor 5022 is connected to the -VDD end, the drain of the NMOS transistor 5022 is connected to one end of the sampling resistor 5030, and the other end of the sampling resistor 5030 can be grounded.
这样可以通过检测的放电电流在采样电阻上形成的电压VSNS来得到相应的放电电流的检测值。In this way, the corresponding detection value of the discharge current can be obtained by detecting the voltage VSNS formed on the sampling resistor by the discharge current.
如图3所示,充电采样支路包括第二电压固定电路5040、第二电流镜电路5050和第三电流镜电路5060。As shown in FIG. 3 , the charging sampling branch includes a second voltage fixing circuit 5040 , a second current mirror circuit 5050 and a third current mirror circuit 5060 .
第二电压固定电路5040与充电电流检测端(充电检测晶体管4000的源极)直接或间接连接,并且第二电压固定电路5040使得充电检测晶体管4000的源极电压等于充电控制晶体管的源极电压,并且第二电压固定电路5040允许充电检测晶体管4000检测的充电检测电流ICS流至第二电流镜电路5050中,第二电流镜电路5050用于将充电检测电流镜像至第三电流镜电路5060,第三电流镜电路5060用于将充电检测电流镜像至采样电阻。The second voltage fixing circuit 5040 is directly or indirectly connected to the charging current detection terminal (the source of the charging detection transistor 4000), and the second voltage fixing circuit 5040 makes the source voltage of the charging detection transistor 4000 equal to the source voltage of the charging control transistor, and the second voltage fixing circuit 5040 allows the charging detection current I CS detected by the charging detection transistor 4000 to flow into the second current mirror circuit 5050, and the second current mirror circuit 5050 is used to mirror the charging detection current to the third current mirror circuit 5060, and the third current mirror circuit 5060 is used to mirror the charging detection current to the sampling resistor.
第二电压固定电路5040包括第二运算放大器5041和第二PMOS晶体管5042,第二PMOS晶体管5042的源极与充电检测晶体管的源极连接,第二运算放大器5041的输出端与第二PMOS晶体管5042的栅极连接,并且第二运算放大器5041的正输入端连接负载/充电器侧的负压端,第二运算放大器5041的负输入端与第二PMOS晶体管5042的源极连接,第二PMOS晶体管5042的漏极连接第二电流镜电路5050的流入端。The second voltage fixing circuit 5040 includes a second operational amplifier 5041 and a second PMOS transistor 5042, the source of the second PMOS transistor 5042 is connected to the source of the charging detection transistor, the output of the second operational amplifier 5041 is connected to the gate of the second PMOS transistor 5042, and the positive input of the second operational amplifier 5041 is connected to the negative voltage end of the load/charger side, the negative input of the second operational amplifier 5041 is connected to the source of the second PMOS transistor 5042, and the drain of the second PMOS transistor 5042 is connected to the inflow end of the second current mirror circuit 5050.
第二电流镜电路5050包括NMOS晶体管5051和NMOS晶体管5052,其中NMOS晶体管5051和NMOS晶体管5052的栅极连接且连接NMOS晶体管5051的漏极,NMOS晶体管5051的漏极连接第二电压固定电路5040的输出端,NMOS晶体管5051的源极连接-VDD端,NMOS晶体管5052的源极连接-VDD端,NMOS晶体管5052的漏极连接第三镜像电路5060。The second current mirror circuit 5050 includes an NMOS transistor 5051 and an NMOS transistor 5052, wherein the gates of the NMOS transistor 5051 and the NMOS transistor 5052 are connected and connected to the drain of the NMOS transistor 5051, the drain of the NMOS transistor 5051 is connected to the output end of the second voltage fixing circuit 5040, the source of the NMOS transistor 5051 is connected to the -VDD end, the source of the NMOS transistor 5052 is connected to the -VDD end, and the drain of the NMOS transistor 5052 is connected to the third mirror circuit 5060.
第三电流镜电路5060包括PMOS晶体管5061和PMOS晶体管5062,PMOS晶体管5061和PMOS晶体管5062的栅极连接,并且连接PMOS晶体管5061的漏极。PMOS晶体管5061和PMOS晶体管5062的源极连接供电电压VDD。PMOS晶体管5062的漏极连接采样电阻5030的一端,采样电阻5030的另一端可以接地。The third current mirror circuit 5060 includes a PMOS transistor 5061 and a PMOS transistor 5062. The gates of the PMOS transistor 5061 and the PMOS transistor 5062 are connected, and the drain of the PMOS transistor 5061 is connected. The sources of the PMOS transistor 5061 and the PMOS transistor 5062 are connected to the power supply voltage VDD. The drain of the PMOS transistor 5062 is connected to one end of the sampling resistor 5030, and the other end of the sampling resistor 5030 can be grounded.
这样可以通过检测的充电检测电流在采样电阻上形成的电压VSNS来得到相应的放电电流的检测值。In this way, the corresponding discharge current detection value can be obtained by detecting the voltage VSNS formed on the sampling resistor by the charging detection current.
根据本公开的进一步实施方式,还包括:第一电荷泵电路CP1和第二电荷泵电路CP2,第一电荷泵电路CP1生成低于电池组的负压端B-电压的电压(-VDD)并且提供至第一电流镜电路5020的流出端,第二电荷泵电路CP2生成低于负载/充电器侧的负压端P-电压的电压(-VDD)并且提供至第二电流镜电路5050的流出端。虽然在图中以电压(-VDD)的形式示出,但是电荷泵也可以生成其他电压值的电压。According to a further embodiment of the present disclosure, it further includes: a first charge pump circuit CP1 and a second charge pump circuit CP2, the first charge pump circuit CP1 generates a voltage (-VDD) lower than the voltage of the negative voltage terminal B- of the battery pack and provides it to the outflow end of the first current mirror circuit 5020, and the second charge pump circuit CP2 generates a voltage (-VDD) lower than the voltage of the negative voltage terminal P- on the load/charger side and provides it to the outflow end of the second current mirror circuit 5050. Although shown in the form of voltage (-VDD) in the figure, the charge pump can also generate voltages of other voltage values.
根据进一步的实施方式,上面两个电荷泵电路可以通过一个电荷泵电路实现,该一个电荷泵电路生成低于电池组的负压端电压且低于负载/充电器侧的负压端电压的电压,并且提供至第一电流镜电路5020和第二电流镜电路5050的流出端。According to a further embodiment, the above two charge pump circuits can be implemented by a charge pump circuit, which generates a voltage lower than the negative voltage terminal voltage of the battery pack and lower than the negative voltage terminal voltage of the load/charger side, and is provided to the outflow end of the first current mirror circuit 5020 and the second current mirror circuit 5050.
根据本公开的另一实施方式,图4和5中示出了另一采样单元的电路图。图4示出了放电检测情况,图5示出了充电检测情况。According to another embodiment of the present disclosure, a circuit diagram of another sampling unit is shown in Figures 4 and 5. Figure 4 shows a discharge detection situation, and Figure 5 shows a charge detection situation.
放电采样支路包括第一电压固定电路5010和第一电流镜电路5020,The discharge sampling branch includes a first voltage fixing circuit 5010 and a first current mirror circuit 5020.
第一电压固定电路5010与放电电流检测端直接或间接连接,并且第一电压固定电路5010使得放电检测晶体管的源极电压等于放电控制晶体管的源极电压,并且第一电压固定电路5010允许放电检测晶体管检测的放电检测电流流至第一电流镜电路5020中,第一电流镜电路5020用于将放电检测电流镜像至采样电阻5030。The first voltage fixing circuit 5010 is directly or indirectly connected to the discharge current detection end, and the first voltage fixing circuit 5010 makes the source voltage of the discharge detection transistor equal to the source voltage of the discharge control transistor, and the first voltage fixing circuit 5010 allows the discharge detection current detected by the discharge detection transistor to flow into the first current mirror circuit 5020, and the first current mirror circuit 5020 is used to mirror the discharge detection current to the sampling resistor 5030.
第一电压固定电路5010包括第一运算放大器5011和第一NMOS晶体管5012,第一NMOS晶体管5012的源极与放电检测晶体管的源极连接,第一运算放大器5011的输出端与第一NMOS晶体管5012的栅极连接,并且第一运算放大器5011的正输入端连接电池组的负压端,第一运算放大器5011的负输入端与第一NMOS晶体管5012的源极连接,第一NMOS晶体管5012的漏极连接第一电流镜电路5020的输出端。The first voltage fixing circuit 5010 includes a first operational amplifier 5011 and a first NMOS transistor 5012, the source of the first NMOS transistor 5012 is connected to the source of the discharge detection transistor, the output of the first operational amplifier 5011 is connected to the gate of the first NMOS transistor 5012, and the positive input of the first operational amplifier 5011 is connected to the negative voltage end of the battery pack, the negative input of the first operational amplifier 5011 is connected to the source of the first NMOS transistor 5012, and the drain of the first NMOS transistor 5012 is connected to the output of the first current mirror circuit 5020.
充电采样支路包括第二电压固定电路5040,第二电压固定电路5040与充电电流检测端直接或间接连接,并且第二电压固定电路5040使得充电检测晶体管的源极电压等于充电控制晶体管的源极电压,并且第二电压固定电路5040允许充电检测晶体管检测的充电检测电流流至采样电阻5030。The charging sampling branch includes a second voltage fixing circuit 5040, which is directly or indirectly connected to the charging current detection terminal, and the second voltage fixing circuit 5040 makes the source voltage of the charging detection transistor equal to the source voltage of the charging control transistor, and the second voltage fixing circuit 5040 allows the charging detection current detected by the charging detection transistor to flow to the sampling resistor 5030.
第二电压固定电路5040包括第二运算放大器5041和第二NMOS晶体管5042,第二NMOS晶体管5042的源极与充电检测晶体管4000的源极连接,第二运算放大器5041的输出端与第二NMOS晶体管5042的栅极连接,并且第二运算放大器5041的正输入端连接负载/充电器的负压端,第二运算放大器5041的负输入端与第二NMOS晶体管5042的源极连接,第二NMOS晶体管5042的漏极连接采样电阻5030。The second voltage fixing circuit 5040 includes a second operational amplifier 5041 and a second NMOS transistor 5042, the source of the second NMOS transistor 5042 is connected to the source of the charging detection transistor 4000, the output of the second operational amplifier 5041 is connected to the gate of the second NMOS transistor 5042, and the positive input of the second operational amplifier 5041 is connected to the negative voltage end of the load/charger, the negative input of the second operational amplifier 5041 is connected to the source of the second NMOS transistor 5042, and the drain of the second NMOS transistor 5042 is connected to the sampling resistor 5030.
还包括第三运算放大器5070,第三运算放大器5070的一个输入端和输入端之间连接采样电阻5030,第三运算放大器5070的另一输入端连接第一电压,第一电压的电压值小于供电电压和大于接地电压。第一电压可以为共模电压VCM。The third operational amplifier 5070 is also included. The sampling resistor 5030 is connected between one input terminal and the input terminal of the third operational amplifier 5070. The other input terminal of the third operational amplifier 5070 is connected to a first voltage. The voltage value of the first voltage is less than the power supply voltage and greater than the ground voltage. The first voltage can be a common mode voltage V CM .
此外,在图4和图5中,如图4所示在采样电阻的两端可以并联有滤波电容5080。In addition, in FIG. 4 and FIG. 5 , as shown in FIG. 4 , a filter capacitor 5080 may be connected in parallel at both ends of the sampling resistor.
根据本公开的一个实施方式,提供了一种功率器件。According to one embodiment of the present disclosure, a power device is provided.
图6示出了根据本公开的一个实施方式的功率器件10。功率器件用于控制电池组的充电和放电,并且检测电池组的充电电流和放电电流。6 shows a power device 10 according to an embodiment of the present disclosure. The power device is used to control the charging and discharging of a battery pack and detect the charging current and the discharging current of the battery pack.
如图6所示,功率器件10可以包括:充电控制晶体管110和充电检测晶体管120。在本公开中,以NMOS晶体管为例进行说明,但是本领域的技术人员应当理解,其也可以为PMOS晶体管。As shown in Fig. 6, the power device 10 may include: a charge control transistor 110 and a charge detection transistor 120. In the present disclosure, an NMOS transistor is used as an example for description, but those skilled in the art should understand that it may also be a PMOS transistor.
充电控制晶体管110的栅极连接充电控制信号GMA以控制电池组的充电,其中充电控制晶体管110的源极连接电池组的一端SMA。当仅包括充电控制晶体管时,充电控制晶体管的漏极可以连接至负载/充电器端。其中,充电控制晶体管可以包括寄生二极管。The gate of the charge control transistor 110 is connected to the charge control signal GMA to control the charging of the battery pack, wherein the source of the charge control transistor 110 is connected to one end SMA of the battery pack. When only the charge control transistor is included, the drain of the charge control transistor can be connected to the load/charger terminal. The charge control transistor can include a parasitic diode.
此外,在充电控制晶体管110的栅极和源极之间可以连接有稳压二极管510,以便防止充电控制晶体管110的栅极被击穿。在图6中,示出了齐纳二极管的形式,当然也可以选择其他类型的二极管。其中可以包括两个反向串联的齐纳二极管。In addition, a voltage regulator diode 510 may be connected between the gate and source of the charge control transistor 110 to prevent the gate of the charge control transistor 110 from being broken down. In FIG6 , a Zener diode is shown, and other types of diodes may also be selected, which may include two Zener diodes connected in reverse series.
而且充电控制晶体管110的栅极可以通过电阻111连接至充电控制信号GMA,以便提供静电保护,其中电阻111的阻值可以为1K欧姆。Furthermore, the gate of the charging control transistor 110 may be connected to the charging control signal GMA via a resistor 111 to provide electrostatic protection, wherein the resistance of the resistor 111 may be 1K ohm.
充电检测晶体管120检测电池组的充电电流,充电检测晶体管120的漏极与充电控制晶体管110的漏极连接,充电检测晶体管120的栅极连接充电控制信号GMA,并且充电检测晶体管的源极作为充电电流检测端SMA1。其中,充电检测晶体管120可以包括寄生二极管。The charging detection transistor 120 detects the charging current of the battery pack, the drain of the charging detection transistor 120 is connected to the drain of the charging control transistor 110, the gate of the charging detection transistor 120 is connected to the charging control signal GMA, and the source of the charging detection transistor serves as the charging current detection terminal SMA1. The charging detection transistor 120 may include a parasitic diode.
此外,在充电检测晶体管120的栅极和源极之间可以连接有稳压二极管411,以便防止充电检测晶体管120的栅极被击穿。在图6中,示出了齐纳二极管的形式,当然也可以选择其他类型的二极管。其中可以包括两个反向串联的齐纳二极管。In addition, a voltage regulator diode 411 may be connected between the gate and source of the charge detection transistor 120 to prevent the gate of the charge detection transistor 120 from being broken down. In FIG6 , a Zener diode is shown, and other types of diodes may also be selected, which may include two Zener diodes connected in reverse series.
而且充电检测晶体管120的栅极可以通过电阻311连接至充电控制信号GMA,以便提供静电保护,其中电阻111的阻值可以为100K欧姆。Furthermore, the gate of the charge detection transistor 120 may be connected to the charge control signal GMA via a resistor 311 to provide electrostatic protection, wherein the resistance of the resistor 111 may be 100K ohms.
充电检测晶体管211的沟道长宽比与充电控制晶体管110的沟道长宽比为1:M,其中M大于1。例如,M值可以为100、1000、10000等。The channel length-to-width ratio of the charge detection transistor 211 and the channel length-to-width ratio of the charge control transistor 110 are 1:M, where M is greater than 1. For example, the value of M may be 100, 1000, 10000, and so on.
充电检测晶体管211的数量为N个,其中N为大于等于1的整数,第N个充电检测晶体管的沟道长宽比与充电控制晶体管的沟道长宽比为1:M的N-1次方,其中i为大于等于1的整数,其中i的数值随着N的取值进行变化。例如图中示出了包括N个充电检测晶体管211、212、…、21n,并且其具有相应的电阻311、312、…、31n、相应的二极管411、412、…、41n。每个充电检测晶体管的连接方式相同,差别在于与充电控制晶体管110的沟道长宽比的比例的不同。在此对于连接方式不再赘述。The number of the charge detection transistors 211 is N, where N is an integer greater than or equal to 1, and the channel length-to-width ratio of the Nth charge detection transistor and the channel length-to-width ratio of the charge control transistor are 1:M to the N-1th power, where i is an integer greater than or equal to 1, and the value of i changes with the value of N. For example, the figure shows that N charge detection transistors 211, 212, ..., 21n are included, and they have corresponding resistors 311, 312, ..., 31n, and corresponding diodes 411, 412, ..., 41n. The connection method of each charge detection transistor is the same, and the difference lies in the different ratios of the channel length-to-width ratio with the charge control transistor 110. The connection method will not be repeated here.
M值为10的整数倍,优选为100。第N个充电检测晶体管与充电控制晶体管的沟道长宽比为1:M的N-1次方。The value of M is an integer multiple of 10, preferably 100. The channel length-to-width ratio of the Nth charge detection transistor to the charge control transistor is 1:M to the power of N-1.
例如晶体管211与晶体管110的沟道长宽比为1:100,晶体管212与晶体管110的沟道长宽比为1:1000,第三晶体管与晶体管110的沟道长宽比为1:10000,第N晶体管21n与晶体管110的沟道长宽比为1:100的N-1次方。For example, the channel length-width ratio of transistor 211 to transistor 110 is 1:100, the channel length-width ratio of transistor 212 to transistor 110 is 1:1000, the channel length-width ratio of the third transistor to transistor 110 is 1:10000, and the channel length-width ratio of the Nth transistor 21n to transistor 110 is 1:100 to the N-1th power.
根据本公开的进一步实施例,功率器件10还包括:放电控制晶体管120,放电控制晶体管120的栅极连接放电控制信号GMB以控制电池组的放电,其中放电控制晶体管120的漏极连接充电控制晶体管110的漏极,放电控制晶体管120的源极连接负载/充电器的一端SMB。其中,放电控制晶体管可以包括寄生二极管。According to a further embodiment of the present disclosure, the power device 10 further includes: a discharge control transistor 120, the gate of which is connected to a discharge control signal GMB to control the discharge of the battery pack, wherein the drain of the discharge control transistor 120 is connected to the drain of the charge control transistor 110, and the source of the discharge control transistor 120 is connected to a terminal SMB of the load/charger. The discharge control transistor may include a parasitic diode.
此外,在放电控制晶体管120的栅极和源极之间可以连接有稳压二极管520,以便防止放电控制晶体管120的栅极被击穿。在图6中,示出了齐纳二极管的形式,当然也可以选择其他类型的二极管。其中可以包括两个反向串联的齐纳二极管。In addition, a voltage regulator diode 520 may be connected between the gate and source of the discharge control transistor 120 to prevent the gate of the discharge control transistor 120 from being broken down. In FIG6 , a Zener diode is shown, and other types of diodes may also be selected, which may include two Zener diodes connected in reverse series.
而且放电控制晶体管120的栅极可以通过电阻121连接至放电控制信号GMB,以便提供静电保护,其中电阻121的阻值可以为1K欧姆。Furthermore, the gate of the discharge control transistor 120 may be connected to the discharge control signal GMB via a resistor 121 to provide electrostatic protection, wherein the resistance of the resistor 121 may be 1K ohm.
此外,在放电检测晶体管221的栅极和源极之间可以连接有稳压二极管421,以便防止放电检测晶体管221的栅极被击穿。在图6中,示出了齐纳二极管的形式,当然也可以选择其他类型的二极管。其中可以包括两个反向串联的齐纳二极管。In addition, a voltage regulator diode 421 may be connected between the gate and source of the discharge detection transistor 221 to prevent the gate of the discharge detection transistor 221 from being broken down. In FIG6 , a Zener diode is shown, and other types of diodes may also be selected, which may include two Zener diodes connected in reverse series.
而且放电检测晶体管221的栅极可以通过电阻321连接至放电控制信号GMB,以便提供静电保护,其中电阻321的阻值可以为100K欧姆。Furthermore, the gate of the discharge detection transistor 221 may be connected to the discharge control signal GMB via a resistor 321 to provide electrostatic protection, wherein the resistance of the resistor 321 may be 100K ohms.
放电检测晶体管221的沟道长宽比与放电控制晶体管120的沟道长宽比为1:M,其中M大于1。例如,M值可以为100、1000、10000等。The channel length-to-width ratio of the discharge detection transistor 221 and the channel length-to-width ratio of the discharge control transistor 120 are 1:M, where M is greater than 1. For example, the value of M may be 100, 1000, 10000, and so on.
放电检测晶体管221的数量为N个,其中N为大于等于1的整数,第N个放电检测晶体管的沟道长宽比与放电控制晶体管的沟道长宽比为1:M的N-1次方,其中i为大于等于1的整数,其中i的数值随着N的取值进行变化。例如图中示出了包括N个放电检测晶体管221、222、…、22n,并且其具有相应的电阻321、322、…、32n、相应的二极管421、422、…、42n。每个放电检测晶体管的连接方式相同,差别在于与放电控制晶体管120的沟道长宽比的比例的不同。在此对于连接方式不再赘述。The number of discharge detection transistors 221 is N, where N is an integer greater than or equal to 1, and the channel length-width ratio of the Nth discharge detection transistor and the channel length-width ratio of the discharge control transistor are 1:M to the N-1th power, where i is an integer greater than or equal to 1, and the value of i changes with the value of N. For example, the figure shows N discharge detection transistors 221, 222, ..., 22n, and they have corresponding resistors 321, 322, ..., 32n, and corresponding diodes 421, 422, ..., 42n. The connection method of each discharge detection transistor is the same, and the difference lies in the different ratios of the channel length-width ratio to the discharge control transistor 120. The connection method will not be repeated here.
M值为10的整数倍,优选为100。第N个放电检测晶体管与放电控制晶体管的沟道长宽比为1:M的N-1次方。The value of M is an integer multiple of 10, preferably 100. The channel length-to-width ratio of the Nth discharge detection transistor to the discharge control transistor is 1:M to the power of N-1.
例如晶体管221与晶体管120的沟道长宽比为1:100,晶体管222与晶体管120的沟道长宽比为1:1000,第三晶体管与晶体管120的沟道长宽比为1:10000,第N晶体管22n与晶体管120的沟道长宽比为1:100的N-1次方。For example, the channel length-width ratio of transistor 221 to transistor 120 is 1:100, the channel length-width ratio of transistor 222 to transistor 120 is 1:1000, the channel length-width ratio of the third transistor to transistor 120 is 1:10000, and the channel length-width ratio of the Nth transistor 22n to transistor 120 is 1:100 to the N-1th power.
在充电控制晶体管110的源极连接第一温度检测部610并且在放电控制晶体管120的源极处连接第二温度检测部620,第一温度检测部和第二温度检测部用于检测电池组的温度。第一温度检测部为第一二极管,第二温度检测部为第二二极管,第一二极管的阴极连接充电控制晶体管的源极,第二二极管的阴极连接放电控制晶体管的源极,并且第一二极管和第二二极管的阳极作为温度检测输出端。其中第一温度检测部的温度检测输出端为D1P,第二温度检测部的温度检测输出端为D2P。其中,第一二极管的阳极可以连接电阻611,并且电阻611的另一端可以作为温度检测输出端D1P,第二二极管的阳极可以连接电阻612,电阻612的另一端可以作为温度检测输出端D2P。The first temperature detection unit 610 is connected to the source of the charge control transistor 110 and the second temperature detection unit 620 is connected to the source of the discharge control transistor 120. The first temperature detection unit and the second temperature detection unit are used to detect the temperature of the battery pack. The first temperature detection unit is a first diode, and the second temperature detection unit is a second diode. The cathode of the first diode is connected to the source of the charge control transistor, and the cathode of the second diode is connected to the source of the discharge control transistor, and the anodes of the first diode and the second diode serve as temperature detection output terminals. The temperature detection output terminal of the first temperature detection unit is D1P, and the temperature detection output terminal of the second temperature detection unit is D2P. The anode of the first diode can be connected to the resistor 611, and the other end of the resistor 611 can be used as the temperature detection output terminal D1P, and the anode of the second diode can be connected to the resistor 612, and the other end of the resistor 612 can be used as the temperature detection output terminal D2P.
在本公开中,充电控制晶体管与充电检测晶体管为相同类型的晶体管,放电控制晶体管与放电检测晶体管为相同类型的晶体管。或者四者皆为相同类型的MOS晶体管。In the present disclosure, the charge control transistor and the charge detection transistor are transistors of the same type, the discharge control transistor and the discharge detection transistor are transistors of the same type, or all four are MOS transistors of the same type.
本领域的技术人员应当理解,MOS晶体管的沟道宽长比越大,导通电阻越小,这样流过其的电流就越大。在本公开中,通过大的宽长比的充电和放电控制晶体管,其导通电阻将会很小,这样在充放电回路中消耗的能量就很小。而在需要检测电流的时候,使用沟道宽长比较小的检测晶体管,这样其导通电阻较大,因此流过其的电流较小,这样可以方便检测,而不需要后续采集单元等耐大电流的需求。同时由于检测晶体管处于检测支路中,这样又不会对正常的充放电回路产生影响,例如消耗电池的电能等。Those skilled in the art will understand that the larger the channel width-to-length ratio of a MOS transistor is, the smaller the on-resistance is, and thus the larger the current flowing through it is. In the present disclosure, by using a charging and discharging control transistor with a large width-to-length ratio, its on-resistance will be very small, so that the energy consumed in the charging and discharging circuit is very small. When it is necessary to detect the current, a detection transistor with a relatively small channel width-to-length ratio is used, so that its on-resistance is large, and thus the current flowing through it is small, which can facilitate detection without the need for subsequent acquisition units and other requirements for withstanding large currents. At the same time, since the detection transistor is in the detection branch, this will not affect the normal charging and discharging circuit, such as consuming the battery's electrical energy.
在包括多个充电检测晶体管的情况下,通过器件的外部电路,可以根据检测的充电电流的大小的情况来切换采用哪个充电检测晶体管来进行检测。例如通过晶体管211得到检测电流,当检测电流过大时,可以切换至晶体管212来得到检测电流,更大时也可以切换至其他晶体管。当检测的充电电流过小时,也可以进行反顺序地切换。另外,可以根据检测的充电电流的具体值,来选择使用那个充电检测晶体管来对充电电流进行检测。In the case of including multiple charging detection transistors, through the external circuit of the device, it is possible to switch which charging detection transistor to use for detection according to the size of the detected charging current. For example, the detection current is obtained through transistor 211. When the detection current is too large, it can be switched to transistor 212 to obtain the detection current. When it is larger, it can also be switched to other transistors. When the detected charging current is too small, it can also be switched in reverse order. In addition, it is possible to select which charging detection transistor to use to detect the charging current according to the specific value of the detected charging current.
在包括多个放电检测晶体管的情况下,通过器件的外部电路,可以根据检测的放电电流的大小的情况来切换采用哪个放电检测晶体管来进行检测。例如通过晶体管221得到检测电流,当检测电流过大时,可以切换至晶体管222来得到检测电流,更大时也可以切换至其他晶体管。当检测的放电电流过小时,也可以进行反顺序地切换。另外,可以根据检测的放电电流的具体值,来选择使用那个放电检测晶体管来对放电电流进行检测。In the case of including multiple discharge detection transistors, through the external circuit of the device, it is possible to switch which discharge detection transistor to use for detection according to the size of the detected discharge current. For example, the detection current is obtained through transistor 221. When the detection current is too large, it can be switched to transistor 222 to obtain the detection current. When it is larger, it can also be switched to other transistors. When the detected discharge current is too small, it can also be switched in reverse order. In addition, it is possible to select which discharge detection transistor to use to detect the discharge current according to the specific value of the detected discharge current.
图7示出了根据本公开的一个实施方式的电池管理系统的示意框图。FIG. 7 shows a schematic block diagram of a battery management system according to an embodiment of the present disclosure.
其中,功率器件10可以串联在电池组20和充电器/负载之间,以便来对充电和放电进行控制,同时也能够对充电电流和放电电流进行检测,同时还可以进行温度的检测。其中温度检测端可以连接外部的采集单元。The power device 10 can be connected in series between the battery pack 20 and the charger/load to control charging and discharging, detect charging current and discharging current, and detect temperature. The temperature detection terminal can be connected to an external acquisition unit.
控制单元30可以为功率器件10提供控制信号GMA和GMB。The control unit 30 may provide control signals GMA and GMB to the power device 10 .
图8示出了根据本公开的一个实施例的电池管理系统的示意性框图。FIG8 shows a schematic block diagram of a battery management system according to an embodiment of the present disclosure.
其中该电池管理系统可以包括上述的功率器件。上述功率器件的描述内容整体引用并入本部分中。The battery management system may include the above-mentioned power device. The description of the above-mentioned power device is incorporated into this section as a whole.
该电池管理系统可以包括电流采集单元,电流采集单元连接功率器件的充电电流检测端和放电电流检测端,以便采集电池组的充电电流和放电电流。The battery management system may include a current acquisition unit, which is connected to a charging current detection terminal and a discharging current detection terminal of a power device so as to acquire a charging current and a discharging current of a battery pack.
该电池管理系统可以还包括:控制单元,控制单元向功率器件提供充电控制信号和放电控制信号,以便控制电池组的充电和放电。The battery management system may further include: a control unit, which provides a charging control signal and a discharging control signal to the power device so as to control the charging and discharging of the battery pack.
当功率器件包括N个充电检测晶体管和/或N个放电检测晶体管的情况下,电池管理系统还可以包括选通单元,并且选通单元选择N个充电检测晶体管和/或N个放电检测晶体管中的一个充电检测晶体管和/或一个放电检测晶体管来得到充电电流和/或放电电流的电流检测信号。When the power device includes N charging detection transistors and/or N discharge detection transistors, the battery management system may further include a gating unit, and the gating unit selects one charging detection transistor and/or one discharge detection transistor among the N charging detection transistors and/or the N discharge detection transistors to obtain a current detection signal of the charging current and/or the discharging current.
该电池管理系统还可以包括检测电流判断单元,检测电流判断单元用于判断电流检测信号的大小,并且选通单元基于电流检测信号的大小来选择N个充电检测晶体管和/或N个放电检测晶体管中的一个充电检测晶体管和/或一个放电检测晶体管。The battery management system may further include a detection current judgment unit, which is used to judge the size of a current detection signal, and a selection unit to select a charging detection transistor and/or a discharge detection transistor among N charging detection transistors and/or N discharge detection transistors based on the size of the current detection signal.
该电池管理系统还可以包括模数转换单元,模数转换单元将电流采集单元的输出信号转换为数字信号。The battery management system may further include an analog-to-digital conversion unit, which converts the output signal of the current acquisition unit into a digital signal.
例如,电流判断单元根据采集单元所采集的充电电流和放电电流,来控制选通单元切换,以确定选择哪个充电检测晶体管和/或放电检测晶体管。这样,可以选择合适大小的电流进行采集,以防止电流过大时损坏器件,电流过小时采样精度受损。For example, the current judgment unit controls the switching of the gating unit according to the charging current and discharging current collected by the collection unit to determine which charging detection transistor and/or discharging detection transistor to select. In this way, a current of a suitable size can be selected for collection to prevent damage to the device when the current is too large and loss of sampling accuracy when the current is too small.
另外,本公开在模数转换单元之后还可以包括调整单元,以便根据充电控制晶体管和充电检测晶体管之间的沟道宽长比的比例来调整电流的检测值,以便使得电流的检测值真实的反映实际的电流。In addition, the present disclosure may further include an adjustment unit after the analog-to-digital conversion unit to adjust the current detection value according to the ratio of the channel width-to-length ratio between the charging control transistor and the charging detection transistor, so that the current detection value truly reflects the actual current.
例如,在某个阶段,诸如以充电控制晶体管110的宽长比为100倍的晶体管211进行检测,而在另一阶段则以充电控制晶体管110的宽长比为1000倍的晶体管212进行检测,如果后期不进行调整的话,则两个数值的比例将不会一致。因此在本公开中后续可以根据宽长比的设置来对后续的电流检测值进行调整。For example, at a certain stage, the detection is performed with the transistor 211 whose width-to-length ratio is 100 times of the charging control transistor 110, and at another stage, the detection is performed with the transistor 212 whose width-to-length ratio is 1000 times of the charging control transistor 110. If no adjustment is made later, the ratio of the two values will not be consistent. Therefore, in the present disclosure, the subsequent current detection value can be adjusted according to the setting of the width-to-length ratio.
此外,在上面以功率器件的形式进行了描述,但是在本公开中,各个晶体管也可以不必制作成功率器件,而采用检测电路的形式。下面,对检测电路进行简单描述,功率器件的整体内容被引入本部分中,其他部分将不再赘述。In addition, the above description is made in the form of a power device, but in the present disclosure, each transistor does not need to be made into a power device, but can be made into a detection circuit. Below, the detection circuit is briefly described, and the overall content of the power device is introduced in this section, and other parts will not be repeated.
检测电路用于检测电池组的充电电流和放电电流,充电控制晶体管控制电池组放电,充电控制晶体管的栅极连接充电控制信号以控制电池组的充电,其中充电控制晶体管的源极连接电池组的一端,放电控制晶体管控制电池组放电,放电控制晶体管的栅极连接放电控制信号以控制电池组的放电,其中放电控制晶体管的漏极连接充电控制晶体管的漏极,放电控制晶体管的源极连接负载/充电器的一端,检测电路包括:充电检测晶体管,充电检测晶体管检测电池组的充电电流,充电检测晶体管的漏极与充电控制晶体管的漏极连接,充电检测晶体管的栅极连接充电控制信号,并且充电检测晶体管的源极作为充电电流检测端;以及The detection circuit is used to detect the charging current and discharging current of the battery pack. The charging control transistor controls the discharging of the battery pack. The gate of the charging control transistor is connected to the charging control signal to control the charging of the battery pack, wherein the source of the charging control transistor is connected to one end of the battery pack. The discharging control transistor controls the discharging of the battery pack. The gate of the discharging control transistor is connected to the discharging control signal to control the discharging of the battery pack. The drain of the discharging control transistor is connected to the drain of the charging control transistor, and the source of the discharging control transistor is connected to one end of the load/charger. The detection circuit includes: a charging detection transistor, the charging detection transistor detects the charging current of the battery pack, the drain of the charging detection transistor is connected to the drain of the charging control transistor, the gate of the charging detection transistor is connected to the charging control signal, and the source of the charging detection transistor serves as a charging current detection end; and
放电检测晶体管,放电检测晶体管检测电池组的放电电流,放电检测晶体管的漏极与放电控制晶体管的漏极连接,放电检测晶体管的栅极连接放电控制信号,并且放电检测晶体管的源极作为放电电流检测端,其中,充电检测晶体管的沟道长宽比与充电控制晶体管的沟道长宽比为1:M,放电检测晶体管的沟道长宽比与放电控制晶体管的沟道长宽比为1:M,其中M大于1。A discharge detection transistor, the discharge detection transistor detects the discharge current of the battery pack, the drain of the discharge detection transistor is connected to the drain of the discharge control transistor, the gate of the discharge detection transistor is connected to the discharge control signal, and the source of the discharge detection transistor serves as a discharge current detection terminal, wherein the channel length-to-width ratio of the charge detection transistor and the channel length-to-width ratio of the charge control transistor are 1:M, and the channel length-to-width ratio of the discharge detection transistor and the channel length-to-width ratio of the discharge control transistor are 1:M, wherein M is greater than 1.
充电检测晶体管的数量为N个,其中N为大于等于1的整数,第N个放电检测晶体管的沟道长宽比与所述放电控制晶体管的沟道长宽比为1:M的N-1次方;以及放电检测晶体管的数量为N个,其中N为大于等于1的整数,第N个放电检测晶体管的沟道长宽比与所述放电控制晶体管的沟道长宽比为1:M的N-1次方。The number of charge detection transistors is N, where N is an integer greater than or equal to 1, and the channel length-to-width ratio of the Nth discharge detection transistor is 1:M to the N-1th power; and the number of discharge detection transistors is N, where N is an integer greater than or equal to 1, and the channel length-to-width ratio of the Nth discharge detection transistor is 1:M to the N-1th power.
充电控制晶体管和充电检测晶体管为NMOS晶体管,并且M值为10的整数倍,优选为100;放电控制晶体管和放电检测晶体管为NMOS晶体管,并且M值为10的整数倍,优选为100。The charge control transistor and the charge detection transistor are NMOS transistors, and the M value is an integer multiple of 10, preferably 100; the discharge control transistor and the discharge detection transistor are NMOS transistors, and the M value is an integer multiple of 10, preferably 100.
在充电控制晶体管的源极连接第一温度检测部并且在放电控制晶体管的源极处连接第二温度检测部,第一温度检测部和第二温度检测部用于检测电池组的温度。A first temperature detection unit is connected to the source of the charge control transistor and a second temperature detection unit is connected to the source of the discharge control transistor. The first temperature detection unit and the second temperature detection unit are used to detect the temperature of the battery pack.
第一温度检测部为第一二极管,第二温度检测部为第二二极管,第一二极管的阴极连接充电控制晶体管的源极,第二二极管的阴极连接放电控制晶体管的源极,并且第一二极管和第二二极管的阳极作为温度检测输出端。The first temperature detection unit is a first diode, the second temperature detection unit is a second diode, the cathode of the first diode is connected to the source of the charge control transistor, the cathode of the second diode is connected to the source of the discharge control transistor, and the anodes of the first diode and the second diode serve as temperature detection output terminals.
充电控制晶体管、充电检测晶体管、放电控制晶体管和放电检测晶体管的栅极和源极之间连接有齐纳二极管。A Zener diode is connected between the gate and source of the charge control transistor, the charge detection transistor, the discharge control transistor and the discharge detection transistor.
充电控制晶体管和充电检测晶体管的栅极分别通过电阻连接至充电控制信号,放电控制晶体管和放电检测晶体管的栅极分别通过电阻连接至放电控制信号。The gates of the charge control transistor and the charge detection transistor are connected to the charge control signal through resistors, respectively. The gates of the discharge control transistor and the discharge detection transistor are connected to the discharge control signal through resistors, respectively.
本公开还提供了一种用电设备,例如电动工具,便携终端、电动汽车等等。如图9所示,该用电设备可以包括上述的功率器件、电池、电池管理系统、或者检测电路等。The present disclosure also provides an electric device, such as an electric tool, a portable terminal, an electric car, etc. As shown in FIG9 , the electric device may include the above-mentioned power device, battery, battery management system, or detection circuit, etc.
另外图10和图11示出了根据本公开可选的实施方式。其中图6与图10的区别在于,充电控制晶体管通过单独的控制信号GMA进行控制,而多个充电检测晶体管则通过同一个控制信号GMA1进行控制;放电控制晶体管通过单独的控制信号GMB进行控制,而多个放电检测晶体管则通过同一个控制信号GMB1进行控制。图11与图10的区别在于,多个充电检测晶体管分别通过多个控制信号GMA1、GMA2、…、GMAn进行控制;多个放电检测晶体管分别通过多个控制信号GMB1、GMB2、…、GMBn进行控制。In addition, Figures 10 and 11 show optional implementations according to the present disclosure. The difference between Figure 6 and Figure 10 is that the charge control transistor is controlled by a separate control signal GMA, while multiple charge detection transistors are controlled by the same control signal GMA1; the discharge control transistor is controlled by a separate control signal GMB, while multiple discharge detection transistors are controlled by the same control signal GMB1. The difference between Figure 11 and Figure 10 is that multiple charge detection transistors are controlled by multiple control signals GMA1, GMA2, ..., GMAn respectively; multiple discharge detection transistors are controlled by multiple control signals GMB1, GMB2, ..., GMBn respectively.
在本说明书的描述中,参考术语“一个实施例/方式”、“一些实施例/方式”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例/方式或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例/方式或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例/方式或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例/方式或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例/方式或示例以及不同实施例/方式或示例的特征进行结合和组合。In the description of this specification, the description with reference to the terms "one embodiment/method", "some embodiments/methods", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment/method or example are included in at least one embodiment/method or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment/method or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments/methods or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments/methods or examples described in this specification and the features of the different embodiments/methods or examples, unless they are contradictory.
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
本领域的技术人员应当理解,上述实施方式仅仅是为了清楚地说明本公开,而并非是对本公开的范围进行限定。对于所属领域的技术人员而言,在上述公开的基础上还可以做出其它变化或变型,并且这些变化或变型仍处于本公开的范围内。Those skilled in the art should understand that the above embodiments are only for the purpose of clearly illustrating the present disclosure, and are not intended to limit the scope of the present disclosure. For those skilled in the art, other changes or modifications may be made based on the above disclosure, and these changes or modifications are still within the scope of the present disclosure.
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110548079.1A CN113178929B (en) | 2021-05-19 | 2021-05-19 | Power device and battery management system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110548079.1A CN113178929B (en) | 2021-05-19 | 2021-05-19 | Power device and battery management system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113178929A CN113178929A (en) | 2021-07-27 |
CN113178929B true CN113178929B (en) | 2024-10-18 |
Family
ID=76929375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110548079.1A Active CN113178929B (en) | 2021-05-19 | 2021-05-19 | Power device and battery management system |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113178929B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113675922A (en) * | 2021-08-18 | 2021-11-19 | 珠海迈巨微电子有限责任公司 | Current detection device, semiconductor chip, battery management system and electric equipment |
CN113884919A (en) * | 2021-09-13 | 2022-01-04 | 珠海迈巨微电子有限责任公司 | Current acquisition circuit, integrated device and battery management system |
CN113777392A (en) * | 2021-09-13 | 2021-12-10 | 珠海迈巨微电子有限责任公司 | Overcurrent detection circuit, integrated device and battery management system |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN214626468U (en) * | 2021-05-19 | 2021-11-05 | 珠海迈巨微电子有限责任公司 | Power device and battery management system |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107579508B (en) * | 2017-09-23 | 2019-06-11 | 华为技术有限公司 | A power protection device and a terminal using the same |
CN112398192A (en) * | 2020-09-01 | 2021-02-23 | 珠海迈巨微电子有限责任公司 | Charge and discharge switch circuit, charge and discharge control device, chip and battery management system |
-
2021
- 2021-05-19 CN CN202110548079.1A patent/CN113178929B/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN214626468U (en) * | 2021-05-19 | 2021-11-05 | 珠海迈巨微电子有限责任公司 | Power device and battery management system |
Also Published As
Publication number | Publication date |
---|---|
CN113178929A (en) | 2021-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113178929B (en) | Power device and battery management system | |
US9933493B2 (en) | Battery management system | |
EP2201660B1 (en) | Battery management system with integration of voltage sensor and charge equalizer | |
CN100373742C (en) | Over voltage transient controller | |
US8513923B2 (en) | Battery charging circuit with trickle charging mode | |
US20150048795A1 (en) | Charge control apparatus and charge control method | |
JP6767769B2 (en) | Semiconductor devices, battery monitoring systems, and detection methods | |
CN115021379B (en) | Charging circuit and electronic equipment | |
CN219085102U (en) | Detection gating module, battery management system and battery management chip | |
JPH06133465A (en) | Method and apparatus for charging secondary battery | |
CN115276152A (en) | Chip with built-in equalization management circuit | |
CN214626468U (en) | Power device and battery management system | |
CN101001021A (en) | Linear charger | |
CN112670959A (en) | Lithium battery protection circuit | |
US20110227538A1 (en) | Circuits for generating reference signals | |
CN216248264U (en) | Current acquisition circuit, integrated device and battery management system | |
KR102360014B1 (en) | Battery management system and batterm management method | |
CN216285471U (en) | Overcurrent detection circuit, integrated device and battery management system | |
CN113300426A (en) | Power device, battery management system and detection circuit | |
CN215870843U (en) | Current detection device, semiconductor chip, battery management system and electric equipment | |
CN114362323A (en) | Charging circuit and chip | |
US7202730B2 (en) | Voltage to current to voltage cell voltage monitor (VIV) | |
CN113447833A (en) | Battery voltage detection circuit | |
CN222762247U (en) | Measuring circuit of lithium battery and lithium battery system | |
CN111123123A (en) | Battery linear charge-discharge test equipment, control method thereof and computer readable storage medium |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 1006, 1007, Building 7, Hongshan Phase 69792, Hongshan Community, Minzhi Street, Longhua District, Shenzhen City, Guangdong Province 518131 Patentee after: Shenzhen Maiju Microelectronics Technology Co.,Ltd. Country or region after: China Address before: Room 24, 1 / F, Tangjiawan Road, Gaoxin District, Zhuhai City, Guangdong Province Patentee before: Zhuhai Meiju Microelectronics Co.,Ltd. Country or region before: China |