CN113169065B - Substrate processing device and substrate processing method - Google Patents
Substrate processing device and substrate processing method Download PDFInfo
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- CN113169065B CN113169065B CN201980079317.XA CN201980079317A CN113169065B CN 113169065 B CN113169065 B CN 113169065B CN 201980079317 A CN201980079317 A CN 201980079317A CN 113169065 B CN113169065 B CN 113169065B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
具备：内槽(341)；设于内槽(341)的外周部的外槽(343)；将内槽(341)和外槽(343)连接的第1配管(50)；对从第1配管(50)通过的磷酸水溶液进行加热的加热器(52)；设在第1配管(50)中的加热器(52)与内槽(341)之间的开闭阀(513)；将第1配管(50)中的加热器(52)和内槽(341)之间的配管部与外槽(343)连接的第2配管(60)；以及设在第2配管(60)的开闭阀(61)。
The invention comprises: an inner tank (341); an outer tank (343) provided on the outer periphery of the inner tank (341); a first pipe (50) connecting the inner tank (341) and the outer tank (343); a heater (52) for heating a phosphoric acid aqueous solution passing through the first pipe (50); an on-off valve (513) provided between the heater (52) in the first pipe (50) and the inner tank (341); a second pipe (60) connecting the pipe portion between the heater (52) in the first pipe (50) and the inner tank (341) and the outer tank (343); and an on-off valve (61) provided on the second pipe (60).
Description
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method. In particular, the present invention relates to a technique for treating a substrate by immersing the substrate in a treatment liquid stored in a tank. Examples of the substrate to be processed include a substrate for FPD (Flat Panel Display) such as a semiconductor substrate, a liquid crystal display device, and an organic EL (Electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and a printed substrate.
Background
In the manufacturing process of the semiconductor device, the silicon nitride film formed on the surface of the substrate is etched by immersing the semiconductor wafer in an aqueous phosphoric acid solution stored in a processing tank, which is called wet etching. A substrate processing apparatus for performing such wet etching is described in patent document 1, for example.
The substrate processing apparatus of patent document 1 includes an inner tank for storing an aqueous phosphoric acid solution in which a substrate is immersed, an outer tank for recovering the aqueous phosphoric acid solution overflowed from an upper portion of the inner tank, and a circulation pipe for connecting the outer tank and the inner tank. The circulation pipe is provided with a circulation pump, a heater, and a filter. The circulation pipe heats and filters the phosphoric acid aqueous solution extracted from the outer tank and returns the phosphoric acid aqueous solution to the inner tank. By providing the circulation pipe, the temperature of the phosphoric acid aqueous solution in the inner tank in which the substrate is immersed is kept at a desired temperature, and foreign matter deposited by etching is filtered.
Prior art literature
Patent literature
Patent document 1 JP patent publication No. 2013-021066
Disclosure of Invention
However, in the case of the related art, by returning the phosphoric acid aqueous solution to the inner tank, there is a possibility that unevenness in flow of the phosphoric acid aqueous solution occurs in the inner tank. As described above, if the flow in the inner tank is uneven, there is a possibility that the phosphoric acid concentration or the concentration of silicon liquated out from the substrate may vary in the phosphoric acid aqueous solution, and thus the etching amount of the substrate may be uneven in the surface.
Accordingly, an object of the present invention is to provide a technique for reducing in-plane variations in substrate processing in a processing bath.
In order to solve the above problems, the 1 st aspect is a substrate processing apparatus for processing a substrate, comprising a bottomed tubular inner tank having a 1 st opening in an upper portion, a bottomed tubular outer tank provided on an outer peripheral portion of the inner tank and having a2 nd opening in an upper portion, a 1 st pipe provided in the inner tank and connecting an inside of the outer tank, a pump provided in the 1 st pipe and supplying a processing liquid from the outer tank to the inner tank, a heater provided in the 1 st pipe and heating the processing liquid passing through the 1 st pipe, a2 nd pipe connecting a pipe portion between the heater and the inner tank in the 1 st pipe and the outer tank, and a2 nd pipe valve provided in the 2 nd pipe and changing a flow rate of the processing liquid passing through the 2 nd pipe.
In the substrate processing apparatus according to claim 1, one end of the 1 st pipe is connected to a bottom of the inner tank.
The 3 rd aspect is the substrate processing apparatus according to the 1 st or 2 nd aspect, further comprising a1 st piping valve provided between the heater in the 1 st piping and the inner tank, the flow rate of the processing liquid passing through the 1 st piping being changed, the 1 st piping valve being provided between a portion of the 1 st piping connected to the 2 nd piping and the inner tank.
The 4 th aspect is the substrate processing apparatus according to the 3 rd aspect, further comprising a control unit connected to the 1 st piping valve and the 2 nd piping valve, and configured to control the 1 st piping valve and the 2 nd piping valve.
The 5 th aspect is the substrate processing apparatus according to the 4 th aspect, wherein the control unit executes a 1 st cycle control process of opening the 1 st piping valve and closing the 2 nd piping valve, and a 2 nd cycle control process of opening the 1 st piping valve and the 2 nd piping valve.
The 6 th aspect is the substrate processing apparatus according to any one of the 3 rd to 5 th aspects, wherein the 1 st pipe includes a bypass pipe branched from a branching portion between the heater and the 1 st pipe valve in the 1 st pipe and connected to the inner tank, and further includes a bypass pipe valve provided in the bypass pipe to change a flow rate of the processing liquid passing through the bypass pipe, and the 2 nd pipe is connected between the branching portion in the bypass pipe and the bypass pipe valve.
In the substrate processing apparatus according to any one of claims 1 to 6, the 2 nd pipe is connected to the inside of the outer tank through the 2 nd opening.
The 8 th aspect is a substrate processing method for processing a substrate by the substrate processing apparatus according to any one of the 1 st to 7 th aspects, comprising a) immersing a substrate in the processing liquid stored in the inner tank, b) returning the processing liquid passing through the 1 st pipe to the inner tank and returning the processing liquid passing through the 1 st pipe to the outer tank through the 2 nd pipe in the step a), and c) heating the processing liquid passing through the 1 st pipe in the step b).
Effects of the invention
According to the substrate processing apparatus of claim 1, a circulating flow for returning the processing liquid overflowed from the inner tank and moving to the outer tank to the inner tank by the 1 st pipe can be formed. Further, by opening the 2 nd piping valve, the treatment liquid can be moved from the 1 st piping to the 2 nd piping and returned to the external tank. Thus, the amount of the treatment liquid returned to the inner tank can be reduced, and thus the flow of the treatment liquid in the inner tank can be reduced. Therefore, in-plane deviation in substrate processing can be reduced.
According to the substrate processing apparatus of claim 2, the processing liquid can be returned like the bottom of the inner tank. This can reduce the flow of the treatment liquid in the inner tank in which the treatment liquid circulates.
According to the substrate processing apparatus of claim 3, the flow of the processing liquid from the 1 st pipe to the inner tank and the flow of the processing liquid from the 1 st pipe to the 2 nd pipe can be controlled by the 1 st pipe valve.
According to the substrate processing apparatus of claim 4, the operation of the 1 st piping valve and the 2 nd piping valve can be controlled by the control unit.
According to the substrate processing apparatus of claim 5, the control unit executes the 1 st cycle control process, and the processing liquid can be moved from the outer tank to the inner tank via the 1 st pipe. Further, the control unit executes the 2 nd cycle control process, and the processing liquid can be moved from the outer tank to the inner tank via the 1 st pipe, and the processing liquid can be moved from the outer tank to the outer tank via the 2 nd pipe branched and extended from the 1 st pipe and the 1 st pipe. Therefore, the amount of the treatment liquid moving from the outer tank to the inner tank can be reduced.
According to the substrate processing apparatus of claim 6, by closing the 1 st piping valve and opening the 2 nd piping valve and the bypass piping valve, a part of the processing liquid returned to the inner tank can be moved to the 2 nd piping and introduced into the outer tank. This can reduce the amount of the treatment liquid flowing into the inner tank.
According to the substrate processing apparatus of claim 7, the processing liquid can be returned from the upper side of the outer tank by the 2 nd pipe.
According to the substrate processing method of claim 8, a circulating flow for returning the processing liquid overflowed from the inner tank and moved to the outer tank to the inner tank by the 1 st pipe can be formed. Further, by opening the valve for the 2 nd pipe, the treatment liquid can be moved from the 1 st pipe to the 2 nd pipe and returned to the external tank. Thus, the amount of the treatment liquid returned to the inner tank can be reduced, and thus the flow of the treatment liquid in the inner tank can be reduced. Therefore, in-plane deviation in substrate processing can be reduced.
Drawings
Fig. 1 is a diagram showing a substrate liquid processing apparatus 100 according to an embodiment.
Fig. 2 is a diagram schematically showing the configuration of the etching processing apparatus 1.
Fig. 3 is a time chart for explaining the operation states of the elements in the etching process in the etching processing apparatus 1.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. The components described in the present embodiment are merely examples, and are not intended to limit the scope of the present invention to these components. In the drawings, the size or the number of each portion is sometimes exaggerated or briefly shown as necessary for easy understanding.
In the present application, expressions showing relative or absolute positional relationships (for example, "in one direction", "parallel", "orthogonal", "central", "concentric", "coaxial", etc.) are not particularly limited, and represent not only the positional relationships thereof but also states in which angles or distances relatively change within a range in which tolerances or functions of the same degree can be obtained. The expressions (e.g., "identical", "equal", "homogeneous", etc.) indicating the equal states are not particularly limited, and indicate not only quantitative and exactly equal states but also states having tolerances or differences in functions of the same degree. The expression (for example, "quadrangular shape" or "cylindrical shape" or the like) representing the shape is not particularly limited, and means not only the shape thereof geometrically exactly but also a shape having, for example, irregularities or chamfers within a range where the same degree of effect can be obtained. The expression "having," "including," "having," "including," or "containing" one component is not an exclusive expression of excluding the presence of other components. The term "above" is not particularly limited, and includes not only the case where two elements are connected but also the case where two elements are separated.
< Embodiment >
Fig. 1 is a diagram showing a substrate liquid processing apparatus 100 (substrate processing apparatus) according to an embodiment. In fig. 1, an XYZ orthogonal coordinate system is defined for explaining the positional relationship of each element. The X axis and the Y axis are parallel to the horizontal plane, and the Z axis is parallel to the vertical direction. In fig. 1, one of the directions of the arrow tip is indicated as a + (positive) direction, and the opposite direction is indicated as a- (negative) direction.
The substrate liquid processing apparatus 100 includes a carrier loading/unloading section 2, a batch forming section 3, a batch loading section 4, a batch transporting section 5, a batch processing section 6, and a control section 7. The carrier loading/unloading section 2 carries in and out carriers 9 that hold a plurality of (for example, 25) silicon wafers W in a horizontal posture (a posture in which both principal surfaces of the substrates W are parallel to a horizontal plane) along the vertical direction (Z-axis direction).
The carrier loading/unloading section 2 is provided with a carrier table 10, a carrier transport mechanism 11, carrier storage bins 12 and 13, and a carrier mounting table 14. A plurality of carriers 9 are mounted on the carrier stage 10 along the Y-axis direction. The carrier transport mechanism 11 transports the carrier 9. The carrier stores 12, 13 temporarily receive a carrier 9. The carrier 9 is mounted on the carrier mounting table 14. The carrier stocker 12 temporarily accommodates the substrates W before the substrates W as products are processed by the batch processing section 6. The carrier stocker 13 temporarily stores the substrates W after the substrates W as products are processed by the batch processing section 6.
The carrier loading/unloading section 2 uses the carrier transport mechanism 11 to transport the carrier 9 loaded from the outside onto the carrier stage 10 to the carrier stocker 12 or the carrier stage 14. The carrier loading/unloading section 2 conveys the carrier 9 placed on the carrier placement table 14 to the carrier stocker 13 or the carrier table 10 by the carrier conveyance mechanism 11. The carrier 9 conveyed to the carrier stage 10 is carried out to the outside.
The batch forming section 3 forms a batch composed of a plurality of substrates W accommodated in one or a plurality of carriers 9 and simultaneously processed (for example, 50 substrates) by combining the substrates W. The batch forming section 3 may be configured to face surfaces on which the patterns are formed on the surfaces of the substrates W when forming the batch. The batch forming section 3 may be configured to face all of the pattern formation surfaces of the substrates W to one side when forming the batch.
The batch forming section 3 is provided with a substrate conveying mechanism 15 for conveying a plurality of substrates W simultaneously. The substrate transport mechanism 15 has a mechanism for changing the posture of the substrate W from a horizontal posture to a vertical posture (a posture in which both main surfaces of the substrate W are parallel to a vertical plane) and from the vertical posture to the horizontal posture during transport of the substrate W.
The lot forming section 3 uses the substrate transfer mechanism 15 to transfer the substrates W from the carrier 9 placed on the carrier stage 14 to the lot mounting section 4, and places the substrates W forming the lot on the lot mounting section 4. The batch forming section 3 uses the substrate conveying mechanism 15 to convey the batch placed on the batch placement section 4 to the carrier 9 placed on the carrier placement table 14. The substrate transport mechanism 15 includes, as substrate support sections for supporting a plurality of substrates W, a1 st substrate support section for supporting the substrates W before processing (before transport by the batch transport section 5) and a 2 nd substrate support section for supporting the substrates W after processing (after transport by the batch transport section 5). By providing the 1 st and 2 nd substrate supporting portions, particles and the like that have fallen off from the substrate W before processing can be prevented from adhering to the processed substrate W.
The lot loading unit 4 includes a lot loading table 16, and the lot loading table 16 temporarily loads the lot transported between the lot forming unit 3 and the lot processing unit 6 by the lot transporting unit 5. The lot loading unit 4 is provided with a carry-in-side lot loading table 17 for loading the lot before processing (before being carried by the lot carrying unit 5) and a carry-out-side lot loading table 18 for loading the lot after processing (after being carried by the lot carrying unit 5). The substrates W of 1 lot are placed in a vertical posture in the Y-axis direction on the placement tables 17 and 18, respectively.
In the lot loading unit 4, the lot formed by the lot forming unit 3 is loaded on the loading-side lot loading table 17, and the lot is loaded into the lot processing unit 6 by the lot carrying unit 5. In the batch placement unit 4, the batch carried out from the batch processing unit 6 by the batch carrying unit 5 is placed on the carrying-out side batch placement table 18, and the batch is carried to the batch forming unit 3.
The batch transfer section 5 transfers a batch between the batch loading section 4 and the batch processing section 6, or within the batch processing section 6. The batch transport unit 5 is provided with a batch transport mechanism 19 for transporting a batch. The batch transport mechanism 19 includes a rail 20 arranged along the batch loading section 4 and the batch processing section 6, a moving body 21 that moves along the rail 20 while holding a plurality of substrates W, and a motor that moves the moving body 21. The movable body 21 is provided with a substrate holder 22 for holding a plurality of substrates W arranged in a vertical posture. The moving body 21 has a mechanism including a motor or the like for advancing and retreating the substrate holder 22 in the Y-axis direction.
The batch processing section 6 performs processes such as etching, cleaning, and drying on 1 batch of a plurality of substrates W arranged in the Y-axis direction in a vertical posture. In the batch processing section 6, a drying processing device 23, a substrate holder cleaning processing device 24, a cleaning processing device 25, and a plurality of (two in this example) etching processing devices 1 are arranged in this order in the +x direction.
The drying treatment apparatus 23 includes a treatment tank 27 and a substrate lifting mechanism 28 provided in the treatment tank 27 so as to be movable up and down. A process gas (isopropyl alcohol (IPA) or the like) for drying is supplied to the processing tank 27. The substrate lifting mechanism 28 vertically aligns and holds a plurality of substrates W of 1 lot in front and rear. The drying processing apparatus 23 receives a lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate lifting mechanism 28, and lifts the lot by the substrate lifting mechanism 28, thereby drying the substrate W by the drying process gas supplied to the processing bath 27. The drying device 23 transfers the lot from the substrate lift mechanism 28 to the substrate holder 22 of the lot transport mechanism 19.
The substrate holder cleaning processing apparatus 24 includes a processing tank 29, and a supply mechanism for supplying a cleaning processing liquid and a drying gas to the processing tank 29. The substrate holder cleaning processing apparatus 24 supplies a cleaning processing liquid to the substrate holders 22 of the batch transport mechanism 19, and then supplies a dry gas to perform cleaning processing of the substrate holders 22.
The cleaning processing device 25 performs cleaning processing of the substrate W. The cleaning apparatus 25 includes a cleaning processing tank 30 and a rinsing processing tank 31, and substrate lifting mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be movable up and down. The cleaning treatment tank 30 stores a cleaning treatment liquid (SC-1 (aqueous ammonia peroxide solution mixture), etc.). The treatment tank 31 for rinsing stores a treatment liquid (purified water or the like) for rinsing.
Each etching processing apparatus 1 performs etching processing of a substrate W. The etching treatment apparatus 1 includes a treatment tank 34 for etching and a treatment tank 35 for rinsing. Substrate lifting mechanisms 36 and 37 are provided in the processing tanks 34 and 35. The processing bath 34 for etching can store therein a processing liquid (phosphoric acid aqueous solution) for etching. The treatment tank 35 for rinsing can store a treatment liquid (purified water or the like) for rinsing therein.
The cleaning processing apparatus 25 and the etching processing apparatus 1 have the same configuration, for example. When the etching processing apparatus 1 is described, the substrate lifting mechanism 36 holds a plurality of substrates W in a batch in a vertical posture in a front-rear direction. In the etching processing apparatus 1, the substrate lifting mechanism 36 receives a lot from the substrate holder 22 of the lot transport mechanism 19. Then, the batch is lowered by the substrate lifting mechanism 36, and the batch is immersed in the etching processing liquid in the processing tank 34. Thus, the etching process of the substrate W is performed. After the etching process, the substrate lifting mechanism 36 lifts the lot and delivers the lot to the substrate holder 22. Thereafter, the substrate lifting mechanism 37 receives a lot from the substrate holder 22. Then, the batch is lowered by the substrate lifting mechanism 37, and immersed in the processing liquid for rinsing of the processing bath 35. Thereby, the substrate W is rinsed. After the rinsing process, the substrate lifting mechanism 37 lifts the lot and delivers the lot to the substrate holder 22.
The control unit 7 is connected to the respective parts of the substrate liquid processing apparatus 100 (the carrier loading/unloading unit 2, the batch forming unit 3, the batch placing unit 4, the batch transporting unit 5, the batch processing unit 6, and the etching processing apparatus 1), and controls these operations. The hard disk configuration of the control unit 7 is, for example, the same as that of a normal computer. That is, the control unit 7 includes a CPU (processor), a ROM, a RAM (memory), and a fixed disk. The CPU includes an arithmetic circuit that performs various arithmetic processes. The ROM stores a basic program. RAM is a volatile main storage device that stores various information. The fixed disk is an auxiliary storage device that stores programs, data, and the like capable of executing the CPU. CPU, ROM, RAM, and the fixed disks are connected together by a bus.
The control unit is connected to a display unit for displaying an image and an operation unit including a keyboard, a mouse, and the like. The display unit may be configured by a touch panel, and in this case, the display unit also functions as an operation unit. The bus of the control unit may be connected to a reading device and a communication unit. The reading device reads information from a computer-readable non-transitory recording medium such as an optical disc, a magnetic disc, and an optical disc. The communication unit can perform information communication with another computer (such as a server) in the control unit 7. The program is supplied to the control section 7 by reading the recording medium on which the program is recorded by the reading device. Further, the program may be supplied to the control section 7 via the communication section.
Fig. 2 is a diagram schematically showing the configuration of the etching processing apparatus 1. The etching treatment apparatus 1 includes the treatment tank 34 for storing a phosphoric acid aqueous solution of a predetermined concentration as a treatment liquid. The processing tank 34 has an inner tank 341 and an outer tank 343. The inner tank 341 is formed in a bottomed tubular shape having a 1 st opening 341P formed by an upper edge. The outer groove 343 is provided on the outer peripheral portion of the inner groove 341, and is formed in a bottomed tubular shape having a 2 nd opening 343P formed by an upper edge. The outer groove 343 is formed in a ring shape surrounding the entire outer peripheral portion of the inner groove 341. If the inner tank 341 is filled with the phosphoric acid aqueous solution, the remaining phosphoric acid aqueous solution overflows from the 1 st opening 341P. Then, the overflowed phosphoric acid aqueous solution passes through the 2 nd opening 343P to flow into the inside of the outer tank 343.
One end of the 1 st pipe 50 is connected to the inside of the outer groove 343. In this example, one end of the 1 st pipe 50 extends downward from above the outer groove 343 through the 2 nd opening 343P, and extends inside the outer groove 343. That is, the opening at one end of the 1 st pipe 50 is located below the 2 nd opening 343P. The other end of the 1 st pipe 50 is connected to the inside of the inner tank 341. In this example, the other end of the 1 st pipe 50 is connected to a bottom portion 341B of the inner tank 341 (a bottom surface of the inner tank 341 in the depth direction). The 1 st pipe 50 is provided with a concentration detector 501, a pump 51, an on-off valve 511, a heater 52, a filter 53, and an on-off valve 513 in this order from the upstream side (the outer tank 343 side).
The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution passing through the 1 st pipe 50. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution by measuring, for example, the absorbance of light of a specific wavelength of the phosphoric acid aqueous solution. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution discharged from the outer tank 343. The concentration detector 501 is connected to the control unit 7, and transmits a detection signal corresponding to the detected phosphoric acid concentration to the control unit 7.
The pump 51 discharges the phosphoric acid aqueous solution from the inside of the outer tank 343 via the 1 st pipe 50, and sends the phosphoric acid aqueous solution to the inside of the inner tank 341. The heater 52 heats the phosphoric acid aqueous solution passing through the 1 st pipe 50. The filter 53 filters the phosphoric acid aqueous solution passing through the 1 st pipe 50. The phosphoric acid aqueous solution discharged from the outer tank 343 moves toward the inner tank 341 by driving the pump 51. Then, the phosphoric acid aqueous solution overflowed from the inner tank 341 flows out again to the outer tank 343. In this way, a circulating flow of the phosphoric acid aqueous solution is formed in the etching treatment apparatus 1.
The opening/closing valves 511, 513 are, for example, electric or electromagnetic valves, and perform conduction blocking control for the flow of the processing liquid through the 1 st pipe 50. The "conduction blocking control of the circulation" means that the circulation of the treatment liquid in the piping is controlled between a state in which the circulation is possible and a state in which the circulation is not possible. The opening/closing valves 511 and 513 are connected to the control unit 7, and the opening/closing operation is controlled by the control unit 7.
As shown in fig. 2, the substrate lifting mechanism 36 includes a holder (not shown) that holds a plurality of substrates W in a vertically standing posture in a state of being arranged horizontally at intervals. The substrate lifting mechanism 36 includes a lifting motor (not shown) that lifts and lowers the substrates W between the upper position Pos1 and the lower position Pos2 while holding the substrates W by the holders.
The 1 st pipe 50 includes a bypass pipe 55. In this example, one end of the bypass pipe 55 is connected to a branch portion 531 of a pipe portion between the filter 53 and the opening/closing valve 513 (1 st pipe valve) in the 1 st pipe 50. The other end of the bypass pipe 55 is connected to a connection portion 533 between the opening/closing valve 513 and the inner tank 341 in the 1 st pipe 50. That is, the bypass pipe 55 branches from a branch portion 531 between the heater 52 and the on-off valve 513 in the 1 st pipe 50, and is connected to the inner tank 341. The other end of the bypass pipe 55 may be directly connected to the inner tank 341 (for example, the bottom 341B).
An on-off valve 57, a flow rate control valve 58, and a flow rate detector 59 are provided in this order on the upstream side (branch portion 531 side) of the bypass pipe 55 of the 1 st pipe 50. The on-off valve 57 and the flow rate control valve 58 are connected to the control unit 7, and operate in response to a control signal from the control unit 7. The on-off valve 57 performs conduction blocking control of the flow of the phosphoric acid aqueous solution flowing from the bypass pipe 55, and the flow rate control valve 58 adjusts the flow rate of the phosphoric acid aqueous solution flowing from the bypass pipe 55. The term "control the flow rate" means that the flow rate is changed in a state where at least the treatment liquid is circulated. As the flow control valve 58, for example, an electric throttle valve is used. The flow rate detector 59 detects the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. The flow rate detector 59 is connected to the control unit 7, and transmits a detection signal corresponding to the detected flow rate to the control unit 7. As the flow rate detector 59, for example, an ultrasonic flowmeter that detects the flow rate in the pipe using ultrasonic waves from the outside of the pipe may be used.
The etching apparatus 1 includes a2 nd pipe 60. The 2 nd pipe 60 constitutes a pipe path connecting the 1 st pipe 50 and the outer groove 343. In this example, one end of the 2 nd pipe 60 is connected to the middle of the path of the bypass pipe 55 which is a part of the 1 st pipe 50. More specifically, one end of the 2 nd pipe 60 is connected to a pipe portion between the opening/closing valve 57 and the branch portion 531 in the bypass pipe 55 of the 1 st pipe 50 via the connection portion 601. The other end of the 2 nd pipe 60 is connected to the inside of the outer groove 343. In this example, the other end of the 2 nd pipe 60 extends downward from above the outer groove 343 through the 2 nd opening 343P and extends inside the outer groove 343.
An on-off valve 61 is provided in the path of the 2 nd pipe 60. The on-off valve 61 is connected to the control unit 7, and performs conduction blocking control of the flow of the phosphoric acid aqueous solution in the 2 nd pipe 60 in response to a control signal from the control unit 7.
In this example, the control unit 7 performs the 1 st cycle control process of opening the opening/closing valves 511 and 513 and closing the opening/closing valves 57 and 61. In the 1 st cycle control process, the phosphoric acid aqueous solution equivalent to the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
In this example, the control unit 7 performs the 2 nd cycle control process of opening the opening/closing valves 511, 57, 61 and closing the opening/closing valve 513. In the 2 nd cycle control process, part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 of the 1 st pipe 50, and the remainder is returned to the outer tank 343 through the 2 nd pipe 60. More specifically, by closing the on-off valve 513, the phosphoric acid treatment liquid discharged from the outer tank 343 through the 1 st pipe 50 is introduced into the bypass pipe 55 through the branch portion 531. A part of the phosphoric acid aqueous solution introduced into the bypass pipe 55 flows from the bypass pipe 55 into the 2 nd pipe 60 via the connection part 601, and is introduced into the outer tank 343. The remaining phosphoric acid aqueous solution is introduced into the inner tank 341 through the bypass pipe 55 and the connection portion 533.
In this way, in the 1 st or 2 nd cycle control process by the control unit 7, the on-off valve 513 functions as a1 st piping valve that changes the flow rate of the processing liquid passing through the 1 st piping 50. The on-off valve 61 functions as a 2 nd pipe valve that changes the flow rate of the processing liquid passing through the 2 nd pipe 60. The on-off valve 57 or the flow rate control valve 58 functions as a bypass piping valve for changing the flow rate of the processing liquid flowing from the bypass piping 55. The term "change the flow rate" includes not only a case where the flow of the liquid is controlled by the on-off valve, but also a case where the flow rate is regulated by the flow rate regulating valve.
When the control unit 7 performs the 2 nd cycle control process, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be adjusted by controlling the flow rate control valve 58 in accordance with the detection result of the flow rate detector 59. That is, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by increasing the opening of the flow rate control valve 58, and the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be decreased by decreasing the opening of the flow rate control valve 58.
The flow control valve 58 may also control the conduction and interruption of the flow of the phosphoric acid aqueous solution through the bypass pipe 55. In this case, the on-off valve 57 may be omitted. In addition, the flow control valve 58 is not necessarily provided. When the flow rate control valve 58 is omitted, the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55 is not regulated, and the flow of the phosphoric acid aqueous solution is controlled by the on-off valve 57 to be conducted and blocked. The bypass pipe 55 is not necessarily provided, and may be omitted. When the bypass pipe 55 is omitted, one end (the connection portion 601) of the 2 nd pipe 60 may be directly connected between the heater 52 and the inner tank 341 (for example, the position of the branch portion 531) in the 1 st pipe 50, for example. In this case, when the circulating flow is formed in the 1 st pipe 50, a part of the phosphoric acid aqueous solution in the 1 st pipe 50 flows into the 2 nd pipe 60 by opening the on-off valve 61, and is sent out to the outside tank 343. This can reduce the amount of the phosphoric acid aqueous solution returned to the inner tank 341 through the 1 st pipe 50.
The etching treatment apparatus 1 includes a phosphoric acid aqueous solution supply unit 40. The phosphoric acid aqueous solution supply unit 40 supplies a phosphoric acid aqueous solution of a predetermined concentration to the outer tank 343. The phosphoric acid aqueous solution supply unit 40 may supply the phosphoric acid aqueous solution to a predetermined portion of the inner tank 341 or the 1 st pipe 50. The phosphoric acid aqueous solution supply unit 40 includes a supply source such as a tank for storing the phosphoric acid aqueous solution, and a supply pipe 401 for connecting the supply source to the outer tank 343. The supply pipe 401 is provided with a flow rate detector 403, a flow rate control valve 405, and an on-off valve 407 in this order from the upstream side (supply source side). The flow rate detector 403 detects the flow rate of the phosphoric acid aqueous solution flowing from the supply pipe 401. The flow control valve 405 adjusts the flow rate of the phosphoric acid aqueous solution flowing from the supply pipe 401. The on-off valve 417 controls the conduction and blocking of the flow of the phosphoric acid aqueous solution in the supply pipe 401.
The flow rate detector 403, the flow rate control valve 405, and the on-off valve 407 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 405 based on the signal indicating the flow rate sent from the flow rate detector 403. Thereby, the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution to the outer tank 343 at a controlled flow rate.
The substrate liquid treatment apparatus 100 includes a purified water supply unit 41. The purified water supply part 41 supplies purified water to the outer tank 343. The purified water supply unit 41 may supply purified water to a predetermined portion of the inner tank 341 or the 1 st pipe 50. For example, purified water is supplied for supplying water evaporated by heating the phosphoric acid aqueous solution. The purified water supply unit 41 includes a supply source for supplying purified water at a predetermined temperature, and a supply pipe 411 for connecting the supply source to the outer tank 343. The supply pipe 411 is provided with a flow rate detector 413, a flow rate control valve 415, and an on-off valve 417 in this order from the upstream side (supply source side). The flow rate detector 413 detects the flow rate of the purified water flowing through the supply pipe 411. The flow control valve 415 adjusts the flow rate of the purified water flowing through the supply pipe 411. The on-off valve 417 controls the conduction and blocking of the purified water flowing through the supply pipe 411.
The flow rate detector 413, the flow rate control valve 415, and the on-off valve 417 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 415 based on the signal indicating the flow rate sent from the flow rate detector 413. Thereby, the purified water supply part 41 supplies purified water to the outer tank 343 at a controlled flow rate.
The etching processing apparatus 1 includes a silicon supply unit 42. The silicon supply part 42 supplies a silicon aqueous solution (e.g., hexafluorosilicic acid aqueous solution (H 2SiF6+H2 O)) to the outer tank 343. The silicon supply unit 42 may supply the silicon aqueous solution to a predetermined portion of the inner tank 341 or the 1 st pipe 50. The silicon supply unit 42 includes a supply source for supplying an aqueous silicon solution, and a supply pipe 421 for connecting the supply source and the outer tank 343. The supply pipe 421 is provided with a flow rate detector 423, a flow rate control valve 425, and an on-off valve 427 in this order from the upstream side (supply side). The flow rate detector 423 detects the flow rate of the silicon aqueous solution flowing from the supply pipe 421. The flow rate control valve 425 adjusts the flow rate of the silicon aqueous solution flowing from the supply pipe 421. The on-off valve 427 performs conduction blocking control for the flow of the silicon aqueous solution in the supply pipe 421.
The flow rate detector 423, the flow rate control valve 425, and the on-off valve 427 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 425 based on the signal indicating the flow rate sent from the flow rate detector 423. Thereby, the silicon supply part 42 supplies silicon to the outer tank 343 at a controlled flow rate.
A waste pipe 90 is connected to a pipe portion of the 1 st pipe 50 connecting the heater 52 and the filter 53. The disposal pipe 90 is a pipe path used when the phosphoric acid aqueous solution in the processing tank 34 is disposed outside the substrate liquid processing apparatus 100. The waste pipe 90 is provided with a concentration detector 901, a waste valve 91, a cooling tank 93, and a waste valve 95 in this order from the upstream side (1 st pipe 50 side).
The concentration detector 901 detects the concentration of silicon in the phosphoric acid aqueous solution passing through the waste pipe 90. The concentration detector 901 detects the silicon concentration detection by measuring, for example, absorbance of light of a specific wavelength in the phosphoric acid aqueous solution. The concentration detector 901 is connected to the control unit 7, and transmits a detection signal corresponding to the detected silicon concentration to the control unit 7.
The cooling tank 93 temporarily stores the relatively high-temperature phosphoric acid aqueous solution discharged from the treatment tank 34 and cools the solution to a temperature at which the solution can be discarded. The waste valve 91 provided upstream of the cooling tank 93 is opened when the phosphoric acid aqueous solution flows into the cooling tank 93 from the 1 st pipe 50. The waste valve 95 provided downstream of the cooling tank 93 is opened when the aqueous phosphoric acid solution is discharged from the cooling tank 93. The waste valves 91 and 95 are connected to the control unit 7, and are controlled to open and close by the control unit 7.
The phosphoric acid aqueous solution passing through the 1 st pipe 50 is sent to the disposal pipe 90 at an appropriate timing. Thus, the silicon concentration in the phosphoric acid aqueous solution is detected by the concentration detector 901. When the silicon concentration is higher than the predetermined concentration, the pure water from the pure water supply unit 41 or the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply unit 40 is appropriately supplied, thereby reducing the silicon concentration in the phosphoric acid aqueous solution in the circulation system.
< Formation of circulation flow concerning phosphoric acid aqueous solution >
When the substrate W is processed in the processing tank 34, a circulating flow of the phosphoric acid aqueous solution in the processing tank 34 and the 1 st pipe 50 is formed. To form this circulation flow, first, an aqueous phosphoric acid solution is stored in the treatment tank 34. Specifically, the phosphoric acid aqueous solution is supplied to the outer tank 343 of the liquid treatment section 39 by the phosphoric acid aqueous solution supply section 40, and the phosphoric acid aqueous solution is supplied from the outer tank 343 to the inner tank 341 by the pump 51 of the 1 st pipe 50. When the inside of the inner tank 341 is filled with the phosphoric acid aqueous solution, the phosphoric acid aqueous solution overflowed from the 1 st opening 341P of the inner tank 341 starts to move toward the outer tank 343. When one end of the 1 st pipe 50 reaches the phosphoric acid aqueous solution stored in the outer tank 343, the discharge of the phosphoric acid aqueous solution from the outer tank 343 through the 1 st pipe 50 is started. In this way, a circulation flow for circulating the phosphoric acid aqueous solution is formed in the circulation system of the treatment tank 34 and the 1 st pipe 50.
Before the circulation flow is formed or at an appropriate timing after the circulation flow is formed, the phosphoric acid aqueous solution flowing from the 1 st pipe 50 is heated by the heater 52 so that the phosphoric acid aqueous solution in the inner tank 341 becomes a predetermined temperature (for example, 80 ℃). Since the water evaporates when the phosphoric acid aqueous solution is in a high temperature state, the phosphoric acid concentration in the phosphoric acid aqueous solution may increase with the passage of time. When the phosphoric acid concentration detected by the concentration detector 501 exceeds a predetermined upper limit value, the control unit 7 supplies purified water from the purified water supply unit 41. The supply of the pure water for adjusting the concentration of phosphoric acid may be performed at any timing when the substrate W is immersed in the phosphoric acid aqueous solution (that is, when the substrate W is subjected to the liquid treatment), or may be performed when the substrate W is not immersed in the treatment liquid.
Fig. 3 is a time chart for explaining the operation states of the elements in the etching process in the etching processing apparatus 1. In fig. 3, the horizontal axis represents time, and the operations of the substrate lifting mechanism 36, the opening/closing valve 513, the opening/closing valve 57, and the opening/closing valve 61 are sequentially shown from the top in the vertical direction. The substrate lifting mechanism 36 is shown as a state change between "upper" indicating a state of being located at the upper position Pos1 above the processing bath 34 and "lower" indicating a state of being located at the lower position Pos2, which is the inside of the processing bath 34 (see fig. 2). The substrate lift mechanism 36 moves the substrate (substrate W) to the lower position Pos2 while holding the batch, and performs etching processing on the batch. The on-off valves 513, 57, 61 show a state change between "on" indicating an on state and "off" indicating an off state. The "amount returned to the inner tank" shown in fig. 3 shows the amount of the phosphoric acid aqueous solution flowing into the inner tank 341 through the 1 st pipe 50 by the operation of the pump 51.
Fig. 3 is a time chart showing 1 cycle of etching processing for one batch including a plurality of substrates W in the processing bath 34 of the etching processing apparatus 1. The etching process includes a carry-in step S11, a dipping step S12, and a carry-out step S13.
In the carry-in step S11, the substrate lift mechanism 36 located at the upper position Pos1 is configured to receive the processing of the lot from the lot transport mechanism 19. The dipping step S12 includes a process of dipping the batch in the phosphoric acid aqueous solution stored in the inner tank 341 by lowering the substrate lifting mechanism 36 from the upper position Pos1 to the lower position Pos 2. By performing the dipping step S12, the substrate W is subjected to etching treatment. The carry-out step S13 includes a process of raising the substrate from the lower position Pos2 to the upper position Pos1 by the substrate lift mechanism 36, a process of pulling up the lot from the phosphoric acid aqueous solution stored in the inner tank 341, and a process of receiving the lot from the substrate lift mechanism 36 of the upper position Pos1 by the lot transport mechanism 19. The lot delivered to the lot transport mechanism 19 is treated with a rinse solution in the treatment tank 35.
Further, one cycle of the etching process in the processing bath 34 includes a normal cycle period T1, a bypass cycle period T2, and a normal cycle period T3 in this order. The normal circulation periods T1 and T3 are periods in which the same amount of phosphoric acid aqueous solution as the phosphoric acid aqueous solution discharged from the outer tank 343 is circulated back to the inner tank 341 through the 1 st pipe 50 by the operation of the pump 51. Hereinafter, the cycle performed by the normal cycle periods T1 and T3 may be referred to as a "normal cycle". The bypass cycle period T2 is a period during which part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 and the rest is returned to the outer tank 343 through the 2 nd pipe 60 by the operation of the pump 51. Hereinafter, the cycle performed during the bypass cycle period T2 may be referred to as a "bypass cycle".
In the normal cycle of the normal cycle periods T1 and T3, the control unit 7 performs the 1 st cycle control process described above. That is, in the normal cycle periods T1 and T3, the on-off valves 511 and 513 of the 1 st pipe 50 are opened, and the on-off valve 57 of the bypass pipe 55 of the 1 st pipe 50 and the on-off valve 61 of the 2 nd pipe 60 are closed. In this normal cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 through the 1 st pipe 50 is directly introduced into the inner tank 341 through the 1 st pipe 50. Therefore, in the normal cycle periods T1 and T3, the entire phosphoric acid aqueous solution from the outer tank 343 is returned to the inner tank 341. That is, the phosphoric acid aqueous solution equivalent to the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
In contrast, in the bypass cycle of the bypass cycle period T2, the control unit 7 performs the above-described 2 nd cycle control process. That is, the on-off valve 513 of the 1 st pipe 50 is closed, and the on-off valve 57 of the bypass pipe 55 and the on-off valve 61 of the 2 nd pipe 60 are opened. In the bypass circulation, the phosphoric acid aqueous solution discharged from the outer tank 343 through the 1 st pipe 50 moves to the bypass pipe 55 side in the branching portion 531. In the connection portion 601, a part of the phosphoric acid aqueous solution passes through the 2 nd pipe 60 to be introduced into the outer tank 343, and the rest passes through the bypass pipe 55 to be moved to the 1 st pipe 50 via the connection portion 533, and then is introduced into the inner tank 341. In the bypass cycle, the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. Therefore, the decrease in the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be suppressed.
Here, the total amount of the phosphoric acid aqueous solution discharged from the outer tank 343 by the operation of the pump 51 is set to V. Then, the flow rate V1 supplied to the inner tank 341 of the phosphoric acid aqueous solution is substantially the same as the total amount V in the normal cycle periods T1 and T3, but is a flow rate V2 smaller than the flow rate V1 in the bypass cycle period T2. This is because the 2 nd pipe 60 can flow during the bypass cycle T2, and therefore a part of the phosphoric acid aqueous solution is introduced from the 2 nd pipe 60 into the outer tank 343. That is, the amount of the aqueous phosphoric acid solution introduced into the outer tank 343 is represented by V-V2.
In the bypass cycle period T2, the flow rate detector 59 detects the flow rate introduced into the inner tank 341 through the bypass pipe 55. The flow rate detected by the flow rate detector 59 is the same as the flow rate flowing into the inner tank 341. Then, during the bypass cycle period T2, the control unit 7 controls the flow control valve 58 so that the detection signal of the flow detector 59 approaches the predetermined flow rate V2. This makes it possible to appropriately adjust the flow rate supplied to the inner tank 341 during the bypass cycle period T2. The control unit 7 may receive a change in the size of V2 via the operation unit.
In the example of fig. 3, the carry-in step S11 before the dipping step S12 is included in the normal cycle period T1. Therefore, the normal cycle is performed in the carry-in step S11. In this case, since the entire phosphoric acid aqueous solution heated by the heater 52 is supplied into the inner tank 341 before the start of the dipping step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly brought to a desired temperature. In addition, when the liquid is supplied from the respective supply units 41 to 43 to the processing tank 34 for adjusting the phosphoric acid or silicon concentration after the etching process of the previous batch, the normal cycle is performed in the carry-in step S11, and thus the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution of the inner tank 341 can be adjusted promptly before the immersing step S12.
In the example of fig. 3, a part of the period in which the dipping step S12 is performed is defined as a bypass cycle period T2. Specifically, during the dipping step S12, a temporary bypass cycle is performed. By performing the bypass cycle, the flow of the phosphoric acid aqueous solution generated in the inner tank 341 can be reduced as compared with the case of performing the normal cycle. That is, since the variation in the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced, the in-plane variation in the etching amount in the substrate W can be reduced.
In the example of fig. 3, the initial stage of the dipping step S12 is included in the normal cycle period T1. That is, in the dipping step S12, a normal cycle is initially performed for a predetermined period of time. Immediately after the start of the dipping step S12, the batch is dipped in the phosphoric acid treatment liquid in the inner tank 341, and therefore, the temperature of the phosphoric acid aqueous solution tends to be low. Then, immediately after the start of the dipping step S12, the normal cycle is performed, whereby the entire phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. This can reduce the temperature drop of the phosphoric acid aqueous solution in the inner tank 341.
In the example of fig. 3, the latter stage of the dipping step S12 is included in the normal cycle period T3. That is, the carry-out step S13 is performed after the transition from the bypass cycle to the normal cycle in the late stage of the dipping step S12. In general, in the dipping step S12, silicon is liquated from each substrate W to the phosphoric acid aqueous solution, and therefore, the silicon concentration in the phosphoric acid aqueous solution of the inner tank 341 tends to be high. Then, it is preferable that the phosphoric acid aqueous solution in the inner tank 341 is rapidly moved to the outer tank 343 by performing a normal cycle before the completion of the dipping step S12. When the silicon concentration of the phosphoric acid aqueous solution is greater than the reference value, the silicon concentration in the phosphoric acid aqueous solution of the circulation system is appropriately reduced by supplying the purified water or the phosphoric acid aqueous solution from the purified water supply unit 41 or the phosphoric acid aqueous solution supply unit 43. Therefore, the silicon concentration in the phosphoric acid aqueous solution in the interior of the inner tank 341 can be promptly optimized by the usual circulation.
In the example of fig. 3, the normal cycle is also performed in the carry-out step S13 after the dipping step S12. In this case, the respective processing liquids are supplied from the respective supply units 41 to 43 during or after the completion of the immersing step S12, and thus the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be optimized promptly until the start of the next etching process cycle. In addition, when the bypass cycle is performed in the dipping step S12, there is a possibility that the temperature of the phosphoric acid aqueous solution in the inner tank 341 may be lowered. In contrast, by performing the normal cycle in the carry-out step S13 after the dipping step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly increased.
In the example of fig. 3, it is set that only a part of the dipping step S12 is subjected to the bypass cycle. However, the bypass cycle may be performed throughout the impregnation step S12. The bypass cycle may be performed by a part or the whole of the carry-in step S11 or the carry-out step S13.
In addition, the bypass cycle is not necessarily performed in the cycle of the entire etching process. For example, the control unit 7 may receive a change of whether or not to perform the bypass cycle via the operation unit every time the etching process is performed. In each cycle, the setting or changing of the timing of executing the bypass cycle may be received via the operation unit. The control unit 7 may automatically execute the bypass cycle according to whether or not the predetermined condition is satisfied. In this case, the control unit 7 may include a determination unit that determines whether or not a predetermined requirement is satisfied based on a threshold value. As the predetermined conditions, for example, the etching amount of the substrate W, the temperature of the phosphoric acid aqueous solution in the circulation system, the phosphoric acid concentration, the silicon concentration, and the like can be set.
The respective opening/closing valves and the respective flow control valves provided in the etching processing apparatus 1 are controlled by the control unit 7, but may be manually operated by an operator. Then, the normal cycle and the bypass cycle may be switched by manual operation by the operator.
The present invention has been described in detail, but the above description is illustrative in all aspects, and the present invention is not limited thereto. It should be understood that numerous modifications, not illustrated, can be devised without departing from the scope of the invention. The respective configurations described in the above embodiments and the respective modifications can be appropriately combined or omitted within the range of contradiction between each other.
Description of the reference numerals
1 Etching treatment device
100 Substrate liquid processing device
34 Treatment tank
341 Inner groove
341B bottom
341P 1 st opening
343 Outer groove
343P 2 nd opening
36 Substrate lifting mechanism
50 St pipe
501 Concentration detector
51 Pump
511. 513, 57, 61 Opening and closing valves
52 Heater
531 Branch part
55 Bypass piping
58 Flow control valve
59 Flow detector
60 No. 2 piping
61 On-off valve
7 Control part
S11 carrying-in step
S12 impregnation step
S13 carrying-out step
During the normal cycle of T1, T3
During the T2 bypass cycle
A W substrate.
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-235659 | 2018-12-17 | ||
| JP2018235659A JP7289649B2 (en) | 2018-12-17 | 2018-12-17 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| PCT/JP2019/047902 WO2020129713A1 (en) | 2018-12-17 | 2019-12-06 | Substrate processing apparatus and substrate processing method |
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| CN113169065A CN113169065A (en) | 2021-07-23 |
| CN113169065B true CN113169065B (en) | 2025-02-11 |
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| JP (1) | JP7289649B2 (en) |
| KR (2) | KR20210082531A (en) |
| CN (1) | CN113169065B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009206419A (en) * | 2008-02-29 | 2009-09-10 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
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| JP3768802B2 (en) * | 1999-11-01 | 2006-04-19 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| CN1499179A (en) * | 2002-11-05 | 2004-05-26 | 矽统科技股份有限公司 | Chemical treatment tank with external tank liquid level indication |
| JP4381947B2 (en) * | 2004-10-04 | 2009-12-09 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| CN101122024A (en) * | 2006-05-18 | 2008-02-13 | 住友精密工业株式会社 | Processing device for processing fluid and substrate processing device having the same |
| JP4762822B2 (en) * | 2006-08-03 | 2011-08-31 | 東京エレクトロン株式会社 | Chemical liquid mixing method and chemical liquid mixing apparatus |
| JP5529634B2 (en) * | 2010-06-10 | 2014-06-25 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and substrate manufacturing method |
| JP5829444B2 (en) | 2011-07-08 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Phosphoric acid regeneration method, phosphoric acid regeneration apparatus and substrate processing system |
| JP6326387B2 (en) | 2015-03-19 | 2018-05-16 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program |
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- 2019-12-06 WO PCT/JP2019/047902 patent/WO2020129713A1/en active Application Filing
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| JP2009206419A (en) * | 2008-02-29 | 2009-09-10 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
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| JP7289649B2 (en) | 2023-06-12 |
| TW202042916A (en) | 2020-12-01 |
| KR20240005163A (en) | 2024-01-11 |
| JP2020098833A (en) | 2020-06-25 |
| TWI731499B (en) | 2021-06-21 |
| CN113169065A (en) | 2021-07-23 |
| KR20210082531A (en) | 2021-07-05 |
| WO2020129713A1 (en) | 2020-06-25 |
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