CN113161214A - Ion trap and ion confinement method - Google Patents
Ion trap and ion confinement method Download PDFInfo
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- CN113161214A CN113161214A CN202010078223.5A CN202010078223A CN113161214A CN 113161214 A CN113161214 A CN 113161214A CN 202010078223 A CN202010078223 A CN 202010078223A CN 113161214 A CN113161214 A CN 113161214A
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- confinement
- electric field
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- ion
- generating device
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- 238000005040 ion trap Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 101
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 230000000694 effects Effects 0.000 claims abstract description 15
- 238000003384 imaging method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 abstract description 46
- 239000000463 material Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 239000002159 nanocrystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 125000003184 C60 fullerene group Chemical group 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010905 molecular spectroscopy Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/04—Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/38—Mounting, supporting, spacing, or insulating electron-optical or ion-optical arrangements
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- Photovoltaic Devices (AREA)
Abstract
An ion trap, which is applied to the technical field of ion traps and comprises: the variable confinement ion source comprises a magnetic field generating device, an optical field generating device and a variable electric field generating device, wherein the magnetic field generating device is used for generating a confinement magnetic field required by ions, the optical field generating device is used for generating an optical field with a variable shape, the variable electric field generating device is used for generating a variable confinement electric field by utilizing a photovoltaic effect through the optical field, and the potential distribution of the variable confinement electric field is consistent with that of the optical field so as to respectively control each ion through the confinement magnetic field and the variable confinement electric field. The application also discloses an ion binding method, which can bind and control each ion at will.
Description
Technical Field
The present disclosure relates to ion traps, and particularly to an ion trap and an ion confinement method.
Background
Ion trap technology is an experimental technology developed from the 50 s of the 20 th century. Since its birth, ion trap technology has played a great role in atomic molecular spectroscopy, quantum information, quantum optics, atomic clock, and the like, and many important technologies have been developed on the basis of this. In particular, the ion trap platform is one of the platforms that is considered most promising for the development of commercial general purpose quantum computers.
The existing ion trap technology is difficult to control single ions, and the expandability of a general quantum computer is influenced. Is an important bottleneck of the current ion trap quantum information experiment. Therefore, how to realize quantum computation by arbitrarily manipulating ions is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The present application provides an ion trap and an ion confinement method, which can control ions at will.
To achieve the above object, a first aspect of embodiments of the present application provides an ion trap, including:
a magnetic field generating device, a light field generating device and a variable electric field generating device;
magnetic field generating means for generating a confining magnetic field;
a light field generating device for generating a light field with a variable shape;
and the variable electric field generating device is used for generating a variable constraint electric field by utilizing a photovoltaic effect through the optical field, and the electric potential distribution of the variable constraint electric field is consistent with the shape of the distribution so as to respectively control each ion through the constraint magnetic field and the variable constraint electric field.
Optionally, the variable electric field generating device includes:
the photovoltaic solar cell comprises a substrate, a conductive layer, a charge transport layer and a photovoltaic layer;
the conducting layer, the charge transmission layer and the photovoltaic layer are sequentially plated on the substrate;
the conducting layer is used for enabling the variable electric field generating device to be grounded through the conducting layer and leading out charges generated by the photovoltaic layer;
the charge transport layer is used for transporting electrons or holes generated by the photovoltaic layer;
the photovoltaic layer is used for generating the variable confinement electric field when the light of the light field irradiates the photovoltaic layer.
Optionally, the ion trap further comprises:
a constant electric field generating device for generating a constant confinement electric field opposite to the direction of the variable confinement electric field to manipulate each ion separately by manipulation of the confinement magnetic field, the constant confinement electric field, and the variable confinement electric field.
Optionally, the ion trap further comprises an imaging device, and a window of the imaging device faces the ion confinement region.
Optionally, the light field is irradiated onto the variable electric field generating device through a window of the imaging device.
Optionally, the ion trap further includes a vacuum cavity, and the imaging device, the magnetic field generating device, the variable electric field generating device, and the constant electric field generating device are all fixed in the vacuum cavity.
Optionally, when the magnetic field generating device is two permanent magnets, the ion trap further includes a bracket, and the two permanent magnets are fixed in the bracket.
Optionally, the light field generating device is a spatial light modulator or a digital micro-mirror array or a deformable mirror or an electrically controlled galvanometer.
A second aspect of embodiments of the present application provides an ion confinement method, including:
generating a confining magnetic field;
generating a shape-variable light field;
and generating a variable constraint electric field by utilizing the photovoltaic effect through the optical field, wherein the shape of the variable constraint electric field is consistent with that of the optical field, so that each ion is controlled through the constraint magnetic field and the variable constraint electric field.
Optionally, the method further includes:
generating a constant confinement electric field opposite in direction to the variable confinement electric field to manipulate each ion separately by the confinement magnetic field, the constant confinement electric field, and the variable confinement electric field.
As can be seen from the foregoing embodiments of the present application, in the ion trap and the ion confinement method provided in the present application, the optical field generator generates the optical field with a variable shape, so that the variable electric field generator generates the variable confinement electric field with a shape identical to that of the optical field by using the photovoltaic effect, and thus the confinement magnetic field generated by the magnetic field generator and the variable confinement electric field form different ion confinement regions to confine and control each ion respectively.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic diagram of an ion trap according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of an ion trap according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of an ion trap according to an embodiment of the present application;
fig. 4 is a schematic flow chart illustrating an ion confinement method according to an embodiment of the present disclosure.
Detailed Description
In order to make the purpose, features and advantages of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic view of an ion trap according to an embodiment of the present application, the apparatus mainly includes:
a magnetic field generating device 10, an optical field generating device 20, and a variable electric field generating device 30;
a magnetic field generating device 10 for generating a confinement magnetic field;
a light field generating means 20 for generating a light field of variable shape;
and a variable electric field generating device 30 for generating a variable confinement electric field by using the photovoltaic effect through the optical field, the electric potential distribution of the variable confinement electric field being in accordance with the optical field distribution, so as to manipulate each ion by the confinement magnetic field and the variable confinement electric field.
The magnetic field generating device 10 may be a permanent magnet, an energized coil, a superconducting magnet, or the like. It is understood that fig. 1 illustrates a permanent magnet as an example.
The light field generating device 20 may be a spatial light modulator, a digital micro-mirror array, or the like.
The variable electric field generating device 30 may be an object capable of generating a photovoltaic effect, and the material capable of generating a photovoltaic effect may be any one or more of a hybrid perovskite material and a pure inorganic perovskite material (ARX3, where a ═ Cs, CH3NH3, HC (NH2)2, B ═ Pb, Sn, X ═ I, Br, Cl), gallium nitride, gallium arsenide, cadmium sulfide, cadmium telluride, amorphous silicon, copper indium gallium selenide, nanocrystals, organic semiconductors, and the like.
In the embodiment of the present application, the optical field generator 20 generates an optical field with a variable shape, so that the variable electric field generator 30 generates a variable confinement electric field with a shape consistent with the optical field by using the photovoltaic effect, and thus, different ion confinement regions are formed by the confinement magnetic field generated by the magnetic field generator 10 and the variable confinement electric field, and each ion is confined and controlled separately.
In one embodiment of the present application, the variable electric field generating device 30 includes: the photovoltaic solar cell comprises a substrate, a conductive layer, a charge transport layer and a photovoltaic layer;
a conducting layer, a charge transmission layer and a photovoltaic layer are sequentially plated on the substrate; a conductive layer for grounding the variable electric field generating device 30 through the conductive layer to derive electric charges generated by the photovoltaic layer; a charge transport layer for transporting electrons or holes generated by the photovoltaic layer;
a photovoltaic layer for generating the variable confinement electric field when light of the optical field impinges on the photovoltaic layer.
More specifically, when the photovoltaic layer is irradiated by a light field in a visible light band, a potential of about 1V can be generated in an irradiation region.
The receiving light band of the variable electric field generating device 30 is a visible light band, a quantum state can be controlled by using laser resonant with an ion electron quantum state in an ion trap experiment, light is received by an adjusting chip, and the receiving light, the quantum state, the control laser and the readout laser are in the same band to be distinguished.
Materials of the conductive layer such as one or more of indium tin oxide, metal and metal nanowires, graphene, highly conductive polymers, and the like; the charge transport layer specifically includes an electron transport layer and a hole transport layer, wherein the material of the electron transport layer is, for example, one or more of TiO2, SnO2, C60, derivatives thereof, and the like. Materials for the hole transport layer such as NiO, PEDOT: one or more of PSS, Poly-TPD, PVK, etc.; the material of the photovoltaic layer is, for example, one or more of a hybrid perovskite material and a pure inorganic perovskite material (ABX3, where a ═ Cs, CH3NH3, HC (NH2)2, B ═ Pb, Sn, X ═ I, Br, Cl), gallium nitride, gallium arsenide, cadmium sulfide, cadmium telluride, amorphous silicon, copper indium gallium selenide, nanocrystals, organic semiconductors, and the like.
In one embodiment of the present application, referring to fig. 2, the ion trap further includes:
a constant electric field generating device 40 for generating a constant confinement electric field opposite to the direction of the variable confinement electric field to manipulate each ion or form different ion confinement regions by the confinement magnetic field, the constant confinement electric field, and the variable confinement electric field, respectively.
In this embodiment, the light field generating device 20 generates a light field with a variable shape, so that the variable electric field generating device 30 generates a variable confinement electric field with a shape consistent with the light field by using a photovoltaic effect, and then generates a constant confinement electric field by using the constant electric field generating device 40, so that different ion confinement regions are formed by the confinement magnetic field generated by the magnetic field generating device 10, the variable confinement electric field and the constant confinement electric field in real time to confine and control each ion respectively.
In one embodiment of the present application, referring to fig. 3, the ion trap further includes an imaging device 50, wherein a window of the imaging device 50 faces the ion confinement region.
Outside the window, an imaging lens group can be assembled to collect photons by using devices such as CCD, PMT, SNSPD and the like, so that the fluorescence photon collection efficiency and the signal-to-noise ratio are improved.
The window of the imaging device 50 is an ultrahigh vacuum optical window, which can increase the numerical aperture of the imaging to the maximum extent and improve the efficiency of ion fluorescence reading and the signal-to-noise ratio.
In one embodiment of the present application, the light field is irradiated onto the variable electric field generating device 30 through a window of the imaging device 50.
In one embodiment of the present application, the ion trap further includes a vacuum chamber, and the imaging device 50, the magnetic field generating device 10, the variable electric field generating device 30, and the constant electric field generating device 40 are fixed in the vacuum chamber.
More, the light field generating device 20 is placed outside the vacuum chamber.
Wherein, the vacuum degree of the vacuum cavity can reach 10^ -11mBar, and the required ultrahigh vacuum background is provided for the ion trap.
In one embodiment of the present application, when the magnetic field generating device 10 is two permanent magnets, the ion trap further comprises a bracket, and the two permanent magnets are fixed in the bracket.
Understandably, the relative position of the two permanent magnets can be maintained by the bracket, so that effective fixed support is provided for the permanent magnets, and the situation that the distance between the two permanent magnets is increased due to repulsive force to influence the constraint of ions on control is avoided. Wherein, keep the interval between two permanent magnets to be 4mm, the restraint magnetic field that two permanent magnets provided is about 0.5T promptly. More, as shown in fig. 1, a laser light-passing hole required for ion manipulation may be reserved on the support to meet the requirement of the ion quantum state of laser manipulation, and a fixing hole for fixing the imaging device 50 on the support may be reserved to make the window of the imaging device 50 closer to the ion confinement region to obtain a larger imaging numerical aperture, and the variable electric field generating device 30 may be assembled on the support.
In one embodiment of the present application, the light field generating device 20 is a spatial light modulator or a digital micromirror array or a deformable mirror or an electrically controlled galvanometer. The light field generator 20 is used to generate a shape-variable light field to excite the variable electric field generator 30 to generate an electric field required for binding ions, so as to bind and control each ion.
Referring to fig. 4, fig. 4 is a schematic flow chart of an ion confinement method according to an embodiment of the present application, which can be implemented by using the ion trap shown in fig. 1, and the method mainly includes:
s101, generating a constraint magnetic field;
s102, generating a light field with a variable shape;
s103, generating a variable constraint electric field through the optical field by utilizing a photovoltaic effect, wherein the shape of the variable constraint electric field is consistent with that of the optical field so as to control the ions through the constraint magnetic field and the variable constraint electric field.
In step S101, a magnetic field generator, such as a permanent magnet, an energized coil, or a superconducting magnet, may be used to generate the confinement electric field.
In step S102, it may be a light field generating device, such as a spatial light modulator, a digital micro-mirror array, or the like, that generates a light field.
In step S103, using the photovoltaic effect, it is possible to generate a variable confinement electric field by a variable electric field generating device including a photovoltaic material, such as one or more of a hybrid perovskite material and a pure inorganic perovskite material (ABX3, where a ═ Cs, CH3NH3, HC (NH2)2, B ═ Pb, Sn, X ═ I, Br, Cl), gallium nitride, gallium arsenide, cadmium sulfide, cadmium telluride, amorphous silicon, copper indium gallium selenide, nanocrystals, organic semiconductors, and the like.
In the embodiment of the application, a confinement magnetic field required by ions is generated, a light field with a variable shape is generated, and a variable confinement electric field with the shape consistent with that of the light field is generated by utilizing a photovoltaic effect, so that different ion confinement regions are formed by the confinement magnetic field and the variable confinement electric field, and each ion is confined and controlled respectively.
In one embodiment of the present application, the method further comprises:
a constant confining electric field is generated in a direction opposite to the variable confining electric field to manipulate each ion separately by the confining magnetic field, the constant confining electric field, and the variable confining electric field.
Among them, it may be a constant electrode that generates a constant confinement electric field.
In the embodiment, a light field with a variable shape is generated, a variable constraint electric field with the same shape as the light field is generated by utilizing a photovoltaic effect, and then a constant constraint electric field is generated, so that different ion constraint areas are formed in real time through the constraint magnetic field, the variable constraint electric field and the constant constraint electric field, and each ion is respectively constrained and controlled.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In view of the above description of the ion trap and the ion confinement method provided in the present application, it will be apparent to those skilled in the art from this disclosure that various changes may be made in the embodiments and applications without departing from the spirit and scope of the disclosure.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010078223.5A CN113161214A (en) | 2020-01-23 | 2020-01-23 | Ion trap and ion confinement method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010078223.5A CN113161214A (en) | 2020-01-23 | 2020-01-23 | Ion trap and ion confinement method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2531050A (en) * | 1946-11-30 | 1950-11-21 | Sylvania Electric Prod | Ion trap |
| WO2011006307A1 (en) * | 2009-07-14 | 2011-01-20 | Guo Jianguo | External electric field type photovoltaic cell |
| CN102249409A (en) * | 2011-06-23 | 2011-11-23 | 南京大学 | Device and method for strengthening treatment of anaerobic sewage by using solar energy |
| US8362423B1 (en) * | 2011-09-20 | 2013-01-29 | The University Of Sussex | Ion trap |
| CN103714878A (en) * | 2014-01-15 | 2014-04-09 | 中国科学院武汉物理与数学研究所 | Integrated ion trapping device |
| CN211788898U (en) * | 2020-01-23 | 2020-10-27 | 中国科学技术大学 | ion trap |
| CN213583693U (en) * | 2020-11-17 | 2021-06-29 | 上海谙邦半导体设备有限公司 | A reaction chamber device |
-
2020
- 2020-01-23 CN CN202010078223.5A patent/CN113161214A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2531050A (en) * | 1946-11-30 | 1950-11-21 | Sylvania Electric Prod | Ion trap |
| WO2011006307A1 (en) * | 2009-07-14 | 2011-01-20 | Guo Jianguo | External electric field type photovoltaic cell |
| CN102249409A (en) * | 2011-06-23 | 2011-11-23 | 南京大学 | Device and method for strengthening treatment of anaerobic sewage by using solar energy |
| US8362423B1 (en) * | 2011-09-20 | 2013-01-29 | The University Of Sussex | Ion trap |
| CN103714878A (en) * | 2014-01-15 | 2014-04-09 | 中国科学院武汉物理与数学研究所 | Integrated ion trapping device |
| CN211788898U (en) * | 2020-01-23 | 2020-10-27 | 中国科学技术大学 | ion trap |
| CN213583693U (en) * | 2020-11-17 | 2021-06-29 | 上海谙邦半导体设备有限公司 | A reaction chamber device |
Non-Patent Citations (2)
| Title |
|---|
| CHRISTIAN SCHNEIDER ET AL: "Influence of static electric fields on an optical ion trap", 《PHYSICAL REVIEW A》, 31 January 2012 (2012-01-31) * |
| JAMES D. SIVERNS ET AL: "Ion trap architectures and new directions", 《QUANTUM INF PROCESS》, 13 November 2017 (2017-11-13) * |
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