CN113135550A - Photon sensing chip preparation method and photon sensing chip - Google Patents
Photon sensing chip preparation method and photon sensing chip Download PDFInfo
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- CN113135550A CN113135550A CN202110217144.2A CN202110217144A CN113135550A CN 113135550 A CN113135550 A CN 113135550A CN 202110217144 A CN202110217144 A CN 202110217144A CN 113135550 A CN113135550 A CN 113135550A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002210 silicon-based material Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 3
- 239000002344 surface layer Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H9/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
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- General Physics & Mathematics (AREA)
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Abstract
The application relates to a preparation method of a photon sensing chip, wherein isobaric holes are formed in forming vent holes or second silicon-based materials on a BCB glue layer, the cavity is kept equal to the external pressure through the vent holes or the isobaric holes, and the structure fracture caused by the pressure difference between the inside and the outside of the cavity can be effectively avoided. The application also provides the photon sensing chip prepared by the method, and the photon sensing chip has the advantage of high yield.
Description
Technical Field
The application belongs to the technical field of photonic chips, and particularly relates to a preparation method of a photonic sensing chip and the photonic sensing chip.
Background
The photon sensing chip is generally provided with a lens at the top end for reflecting light, when the photon sensing chip is vibrated, the lens at the top end vibrates, so that the reflection angle of the reflected light is influenced, and accordingly, a photoreceptor senses the change of the reflection angle, so that the vibration is determined and the related parameters of the vibration are sensed.
The photon sensing chip is generally provided with a cavity, the cavity is formed by etching a first silicon-based material to form the cavity, then a second silicon-based material is fixed on the first silicon-based material in a bonding mode, and finally the second silicon-based material is thinned. However, after the first silicon base is bonded with the second silicon base material, the cavity is completely closed, and pressure difference exists inside and outside the cavity, which easily causes structural fracture in the preparation process.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to solve the defects in the prior art, the photon sensing chip and the preparation method thereof are provided, which can avoid the structural fracture caused by the pressure difference between the inside and the outside of the cavity.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a preparation method of a photon sensing chip comprises the following steps:
s1: taking a first silicon-based material, and forming a cavity through corrosion;
s2: covering a second silicon-based material on the cavity of the first silicon-based material, and bonding the contact parts of the first silicon-based material and the second silicon-based material; during bonding, firstly coating BCB glue on the first silicon-based material to form a BCB glue layer, forming a vent hole on the BCB layer, wherein one end of the vent hole is communicated with the cavity after bonding, and the other end of the vent hole is communicated with a gap between the first silicon-based material and the adjacent first silicon-based material;
s3: thinning one side of the second silicon-based material, which is far away from the first silicon-based material;
s4: etching the second silicon-based material to form a mirror surface body above the cavity, wherein the periphery of the mirror surface body is hollowed and connected with other parts of the second silicon-based material through beam arms;
s5: and plating a mirror layer on the outer surface of the mirror body.
Preferably, in the preparation method of the photon sensing chip, the vent holes are located at four corners.
Preferably, in the preparation method of the photonic sensing chip, the vent holes include a plurality of vent holes arranged perpendicular to each other, and the number of vent holes arranged in different directions is equal.
Preferably, in the preparation method of the photon sensing chip, the width of the vent hole is 10-20 microns.
Preferably, in the preparation method of the photon sensing chip, the vent hole is formed by performing photolithography on the BCB glue layer.
Preferably, the preparation method of the photon sensing chip of the invention,
in the step of S4, the thickness is reduced to 100 μm by mechanical thinning, and then the target thickness is achieved by deep reactive ion etching.
The application also provides a preparation method of the photon sensing chip, which comprises the following steps:
s1: taking a first silicon-based material, and forming a cavity through corrosion;
s2: covering a second silicon-based material on the cavity of the first silicon-based material, and bonding the contact parts of the first silicon-based material and the second silicon-based material; in the step S2, BCB glue is used for bonding the contact part of the first silicon-based material and the second silicon-based material, an isobaric hole is formed in the second silicon-based material through etching, one end of the isobaric hole is communicated with the cavity, and the other end of the isobaric hole is positioned in an opening at the top end of the second silicon-based material and is positioned in a hollow area to be etched;
s3: thinning one side of the second silicon-based material, which is far away from the first silicon-based material;
s4: etching the second silicon-based material to form a mirror surface body above the cavity, wherein the periphery of the mirror surface body is hollowed and connected with other parts of the second silicon-based material through beam arms;
s5: and plating a mirror layer on the outer surface of the mirror body.
Preferably, the preparation method of the photon sensing chip of the invention,
the part of the isobaric hole, which is positioned at the top end of the second silicon-based material, is a blind hole, the depth of the isobaric hole is more than or equal to 100 mu m, and deep reactive ions are used for etching when the isobaric hole is thinned to the thickness of the isobaric hole.
The invention also provides a photon sensing chip prepared by the method.
The invention has the beneficial effects that:
according to the preparation method of the photon sensing chip, the isobaric holes are formed in the forming vent holes or the second silicon-based material on the BCB glue layer, the cavity is kept at the same pressure with the outside through the vent holes or the isobaric holes, and the fact that the structure is broken due to the fact that pressure difference exists inside and outside the cavity can be effectively avoided. The application also provides the photon sensing chip prepared by the method, and the photon sensing chip has the advantage of high yield.
Drawings
The technical solution of the present application is further explained below with reference to the drawings and the embodiments.
FIG. 1 is a structural view of a first silicon-based material formed with a cavity in example 1;
FIG. 2 is a structural view after a first silicon-based material and a second silicon-based material are bonded in example 1;
FIG. 3 is a structural view of a second silicon-based material of example 1 after thinning;
FIG. 4a is a schematic view showing a second silicon-based material after being etched and hollowed out in example 1;
FIG. 4b is a top view of the second silicon-based material of example 1 after it has been etched through (showing the cantilever);
FIG. 5 is a structural view after a mirror layer is formed on a second silicon-based material in example 1;
FIG. 6 is a structural view after forming a vent hole in the first silicon-based material in example 1;
FIG. 7 is a structural view (shown by dotted lines inside) of a second silicon-based material in example 2 after an isopipe was formed thereon;
FIG. 8 is a block diagram of another embodiment after forming an isopipe in a second silicon-based material (shown in phantom lines inside);
fig. 9 is a flowchart of the formation of the BCB layer and the vent holes in example 1.
The reference numbers in the figures are:
1 a first silicon-based material;
2 a second silicon-based material;
3 BCB layer;
4, ventilating holes;
9, pressing the hole with equal pressure;
10, a cavity;
21, a hollow-out area;
22 specular body;
a 221 mirror layer;
222 beam arm.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.
The technical solutions of the present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Example 1
This embodiment provides a method for manufacturing a photonic sensor chip, as shown in fig. 1-3, 4a, 4b, and 5,
the method comprises the following steps:
s1: taking a first silicon-based material 1, and forming a cavity 10 by corrosion;
s2: covering a second silicon-based material 2 on the cavity 10 of the first silicon-based material 1, and bonding the contact parts of the first silicon-based material 1 and the second silicon-based material 2; during bonding, firstly coating BCB glue on the first silicon-based material 1 to form a BCB glue layer 3, forming a vent hole 4 on the BCB layer 3, and communicating one end of the vent hole 4 with the cavity 10 and the other end with a gap between the first silicon-based material 1 and the adjacent first silicon-based material 1 after bonding; (that is, on the wafer, there is a gap between the first silicon-based material 1 and the adjacent first silicon-based material 1, and the gap is also the basis for cutting the wafer when the wafer is subjected to post-scribing);
s3: thinning one side of the second silicon-based material 2, which is far away from the first silicon-based material 1;
s4: etching the second silicon-based material 2 to form a mirror body 22 above the cavity 10, wherein the periphery of the mirror body 22 is hollowed to be connected with other parts of the second silicon-based material 2 through a beam arm 222, that is, a hollowed area 21 is hollowed;
s5: and a mirror layer 221 is plated on the outer surface of the mirror body 22.
Preferably, the vent holes 4 are located at four corners, and the four corners can reduce the influence on the structure. The vent holes 4 comprise mutually vertical vent holes which are transversely and longitudinally arranged, and the number of the vent holes 4 arranged in different directions is equal, so that gas can be discharged from the periphery, and the uniformity of the gas pressure in the cavity is ensured.
As an alternative embodiment, the ventilation holes 4 are provided directly at the diagonals of the four corners.
Preferably, the step S4 is performed by mechanical thinning to 100 μm and deep reactive ion etching to a target thickness (the target thickness is usually set to 30 μm). The mechanical thinning speed is fast, but when the second silicon-based material 2 is thin, the second silicon-based material 2 is easily damaged and cracks appear, Deep Reactive Ion Etching (DRIE) is a dry etching process, and the top layer of the second silicon-based material 2 is hardly stressed in the thinning process, so that the cracks can be avoided.
The specific formation process of the BCB layer and the vent holes is shown in fig. 9:
s21: coating BCB glue on the first silicon-based material 1 to form a BCB layer 3;
s22: the BCB layer 3 is subjected to photolithography to form the vent holes 4 in the BCB layer 3.
And then the second silicon-based material 2 is aligned with the first silicon-based material 1 for bonding.
The diameter of the vent holes 4 is preferably 10 to 20 micrometers, more preferably 13 to 15 micrometers.
Example 2
This embodiment provides a method for manufacturing a photonic sensor chip, as shown in fig. 1-3, 4a, 4b, and 7,
the method comprises the following steps:
s1: taking a first silicon-based material 1, and forming a cavity 10 by corrosion;
s2: covering a second silicon-based material 2 on the cavity 10 of the first silicon-based material 1, and bonding the contact parts of the first silicon-based material 1 and the second silicon-based material 2; in the step S2, BCB glue is used for bonding the contact part of the first silicon-based material 1 and the second silicon-based material 2, an isobaric hole 9 is formed in the second silicon-based material 2 through etching, and one end of the isobaric hole 9 is communicated with the cavity 10 and is located in a hollow area 21 to be etched;
s3: thinning one side of the second silicon-based material 2, which is far away from the first silicon-based material 1;
s4: etching the second silicon-based material 2 to form a mirror body 22 above the cavity 10, wherein the periphery of the mirror body 22 is hollowed to be connected with other parts of the second silicon-based material 2 through beam arms 222; the beam arm 222 serves to support the specular body 22.
S5: and plating a mirror layer on the outer surface of the mirror body 22.
As shown in fig. 8, the isopipe 9 is divided into a vertical portion at the top and an inclined portion at the bottom, and the thickness of the vertical portion is reduced by mechanical thinning, and the thickness of the inclined portion is etched by deep reactive ion etching.
The diameter of the isopipe 9 is preferably 10-20 microns.
The part of the isobaric hole 9, which is positioned at the top end of the second silicon-based material 2, is a blind hole, the depth of the isobaric hole 9 is more than or equal to 100 mu m, and deep reactive ions are used for etching when the thickness of the isobaric hole 9 is reduced. The deep reactive ions are thinned by a dry method, so that impurities can be prevented from entering the cavity. The arrangement of the blind end is convenient for mechanical thinning at a non-porous position, and the thinning speed is improved.
The isobaric hole of the partial molding that is about to fretwork can avoid the setting of isobaric hole 9 to influence whole chip structure.
Examples 3 and 4
Examples 3 and 4 respectively provide a photonic sensor chip prepared by the photonic sensor chip preparation methods of examples 1 and 2, respectively.
The chip processing technology in the application comprises the following steps: lithography, etching, ion implantation or doping, wafer bonding processes, sputtering or deposition processes. Existing processes may be used unless otherwise specified.
According to the preparation method of the photon sensing chip, the vent holes 4 or the isobaric holes 9 are formed in the first silicon-based material 1 or the second silicon-based material 2, the cavity is kept at the same pressure with the outside through the vent holes 4 or the isobaric holes 9, and the structure fracture caused by the pressure difference between the inside and the outside of the cavity can be effectively avoided. The application also provides the photon sensing chip prepared by the method, and the photon sensing chip has the advantage of high yield.
In light of the foregoing description of the preferred embodiments according to the present application, it is to be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. The technical scope of the present application is not limited to the contents of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A preparation method of a photon sensing chip is characterized by comprising the following steps:
s1: taking a first silicon-based material (1), and forming a cavity (10) by corrosion;
s2: covering a second silicon-based material (2) on the cavity (10) of the first silicon-based material (1), and bonding the contact parts of the first silicon-based material (1) and the second silicon-based material (2); during bonding, firstly, coating BCB glue on the first silicon-based material (1) to form a BCB glue layer, forming a vent hole (4) on the BCB layer, and after bonding, one end of the vent hole (4) is communicated with the cavity (10), and the other end of the vent hole is communicated with a gap between the first silicon-based material (1) and the adjacent first silicon-based material (1);
s3: thinning the side of the second silicon-based material (2) far away from the first silicon-based material (1);
s4: etching the second silicon-based material (2), forming a mirror body (22) above the cavity (10), wherein the periphery of the mirror body (22) is hollowed to be connected with other parts of the second silicon-based material (2) through beam arms (222);
s5: and plating a mirror surface layer on the outer surface of the mirror surface body (22).
2. The method for preparing the photon sensing chip according to claim 1, wherein the vent holes (4) are positioned at four corners.
3. The method for preparing the photon sensing chip according to claim 2, wherein the vent holes (4) comprise a plurality of vent holes arranged perpendicular to each other, and the number of vent holes (4) arranged in different directions is equal.
4. The method for preparing a photonic sensor chip according to any one of claims 1 to 3, wherein the width of the vent hole (4) is 10 to 20 μm.
5. The method for preparing a photonic sensing chip according to claim 1, wherein the vent hole (4) is formed by photolithography on a layer of BCB glue.
6. The method of manufacturing a photonic sensing chip according to claim 1,
in the step of S4, the thickness is reduced to 100 μm by mechanical thinning, and then the target thickness is achieved by deep reactive ion etching.
7. A preparation method of a photon sensing chip is characterized by comprising the following steps:
s1: taking a first silicon-based material (1), and forming a cavity (10) by corrosion;
s2: covering a second silicon-based material (2) on the cavity (10) of the first silicon-based material (1), and bonding the contact parts of the first silicon-based material (1) and the second silicon-based material (2); in the step S2, BCB glue is used for bonding the contact part of the first silicon-based material (1) and the second silicon-based material (2), an isobaric hole (9) is formed in the second silicon-based material (2) through etching, one end of the isobaric hole (9) is communicated with the cavity (10), and the other end of the isobaric hole is positioned in a hollow area to be etched, and is positioned at the top end of the second silicon-based material (2);
s3: thinning the side of the second silicon-based material (2) far away from the first silicon-based material (1);
s4: etching the second silicon-based material (2), forming a mirror body (22) above the cavity (10), wherein the periphery of the mirror body (22) is hollowed to be connected with other parts of the second silicon-based material (2) through beam arms (222);
s5: and plating a mirror surface layer on the outer surface of the mirror surface body (22).
8. The method for preparing a photonic sensing chip according to claim 7, wherein the isopipe (9) is divided into a vertical portion at the top and an inclined portion at the bottom, the vertical portion is thinned mechanically, and the inclined portion is etched by deep reactive ions.
9. The method of manufacturing a photonic sensing chip according to claim 7,
the part of the isobaric hole (9) positioned at the top end of the second silicon-based material (2) is a blind hole, the depth of the isobaric hole (9) is more than or equal to 100 mu m, and deep reactive ions are used for etching when the isobaric hole (9) is thinned to the thickness.
10. A photonic sensing chip prepared by the method of any one of claims 1 to 9.
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| CN108594428A (en) * | 2018-04-16 | 2018-09-28 | 西安知微传感技术有限公司 | The micro- galvanometers of MEMS and production method based on the prefabricated micro- galvanometers of the MEMS of SOI top layer silicons |
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