CN113131874B - Doherty power amplifier for wireless communication - Google Patents
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- CN113131874B CN113131874B CN202110462806.2A CN202110462806A CN113131874B CN 113131874 B CN113131874 B CN 113131874B CN 202110462806 A CN202110462806 A CN 202110462806A CN 113131874 B CN113131874 B CN 113131874B
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- 238000012512 characterization method Methods 0.000 description 1
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/04—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
- H03F1/06—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
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Abstract
The application provides a Doherty power amplifier for wireless communication, and belongs to the field of wireless communication. The application mainly comprises a power distribution module, a main amplifying circuit module, an auxiliary amplifying circuit module and a load modulation network module power. The main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network; the main input matching network and the auxiliary input matching network are subjected to step matching through multistage microstrip line cascading. The Doherty power amplifier for wireless communication has the advantages that the Doherty power amplifier for wireless communication is cascaded through the microstrip stage, and impedance transformation is reduced by adopting a step-type input and output matching mode, so that the bandwidth of the Doherty power amplifier for wireless communication is expanded, and the full-band internal compensation line is realized to meet phase compensation.
Description
Technical Field
The invention relates to the field of wireless communication, in particular to a Doherty power amplifier for wireless communication.
Background
The acceleration of the 5G communication pace competes with the recent years, which has stimulated unprecedented interest in low cost and high performance radio frequency power amplifiers. In transceivers of wireless communication systems, how to effectively amplify peak-to-average ratio signals has become an increasing concern. The prior art generally employs a power modulation technique or a power amplifier having a conventional Doherty structure to amplify a peak-to-average ratio signal.
The traditional Doherty power amplifier for wireless communication has a structure that two power amplifiers are used, as shown in fig. 1, one of the power amplifiers works in class AB as a main power amplifier, and the other power amplifier works in class B or class C as an auxiliary power amplifier. The input end is a wilkinson equal power divider. When the input signal power is smaller, the main power amplifier is turned on and outputs a signal, and the auxiliary power amplifier is turned off, so that the load is increased to reduce the power consumption of the power supply; when the power of the input signal is gradually increased, the threshold voltage of the auxiliary power amplifier is reached, the auxiliary power amplifier also enters a working state, the load is reduced, and the output power is improved. By using the scheme, the efficiency can be improved under the power back-off, namely the average efficiency of the power amplifier can be improved.
However, in the traditional Doherty power amplifier for wireless communication, a lambda/4 impedance transformation line is arranged at the output end of the main power amplifier to play a role of load modulation. However, the selection of the λ/4 microstrip line to the frequency can greatly limit the bandwidth of the Doherty power amplifier, so that the Doherty power amplifier can only work in a narrower frequency band, the gradual change from 2Zopt to Zopt is not possible to be realized in the full frequency band, and an offset line for phase compensation is arranged at the input end of the auxiliary power amplifier, but the compensation line cannot meet the phase compensation in the full frequency band, and the electric length of the compensation line correspondingly changes along with the frequency offset center point, so that impedance change can be caused, impedance matching is affected, and the power amplifier cannot be matched to the optimal load.
Disclosure of Invention
The application provides a Doherty power amplifier for wireless communication, which reduces impedance transformation by adopting a step-type input and output matching mode through microstrip cascade, thereby expanding the bandwidth of the Doherty power amplifier for wireless communication.
In order to achieve the above object, the present application provides a Doherty power amplifier for wireless communication, comprising: the power distribution module, the main amplifying circuit module, the auxiliary amplifying circuit module and the load modulation network module;
The power distribution module is used for distributing the input signals into multipath signals with preset phase differences and outputting the multipath signals to the main amplifying circuit module and the auxiliary amplifying circuit module respectively; the main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network, and is used for carrying out power amplification on an input main amplifying circuit signal to obtain a main amplifying signal; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network, and is used for carrying out power amplification on an input auxiliary amplifying circuit signal to obtain an auxiliary amplifying signal; the load modulation network module is used for carrying out load modulation on a synthesized signal synthesized by the main amplified signal and the auxiliary amplified signal; the main input matching network and the auxiliary input matching network are subjected to step matching through multistage microstrip line cascading.
The Doherty power amplifier for wireless communication has the advantages that the Doherty power amplifier for wireless communication is cascaded through the microstrip stage, and impedance transformation is reduced by adopting a step-type input and output matching mode, so that the bandwidth of the Doherty power amplifier for wireless communication is expanded, and the full-band internal compensation line is realized to meet phase compensation.
Drawings
Fig. 1 is a schematic diagram of a circuit structure of a Doherty power amplifier for wireless communication in the prior art;
FIG. 2 is a schematic diagram of a quarter wavelength microstrip line;
FIG. 3 is a schematic diagram of a structure of a Doherty power amplifier for wireless communication according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a T-shaped structure employed in the present application;
FIG. 5 is a schematic diagram of a structure of a Doherty power amplifier for wireless communication according to an embodiment of the present application;
FIG. 6 is a schematic diagram of a structure of a Doherty power amplifier for wireless communication according to an embodiment of the present application;
Fig. 7 is a schematic circuit diagram of a Doherty power amplifier for wireless communication according to an embodiment of the present application.
The components in the figures are labeled as follows:
T1-first matching microstrip, T2-second matching microstrip, T3-third matching microstrip, T4-fourth matching microstrip, T5-fifth matching microstrip, T6-sixth matching microstrip, T7-seventh matching microstrip, T8-eighth matching microstrip, T9-ninth matching microstrip, T10-tenth matching microstrip, T11-eleventh matching microstrip, T12-twelfth matching microstrip, T13-thirteenth matching microstrip, T14-fourteenth matching microstrip, T15-first connecting microstrip, T16-second connecting microstrip, T17-third connecting microstrip, T18-fourth connecting microstrip, TO 1-first modulation microstrip line, TO 2-second modulation microstrip line, TO 3-third modulation microstrip line, TO 4-fourth modulation microstrip line, TO 5-fifth modulation microstrip line, C1-first matching capacitor, C2-second matching capacitor, C3-third matching capacitor, C4-fourth matching capacitor, C5-fifth matching capacitor, C6-sixth matching capacitor, C7-first voltage stabilizing capacitor, C8-second voltage stabilizing capacitor, C7-third voltage stabilizing capacitor, C6-fourth voltage stabilizing capacitor, R1-first matching resistor, R2-second matching resistor, R3-first connecting resistor, R4-second connecting resistor.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the attached drawings so that the advantages and features of the present invention will be more readily understood by those skilled in the art, thereby making a clearer definition of the scope of the present invention.
It should be noted that, in this document, a relationship such as a first, second, etc. is merely used to distinguish one entity or operation from another entity or operation and does not necessarily require or imply any such actual relationship or order between such actual operations. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements is inherent to. Without further limitation, an element defined by the phrase "comprising" does not exclude the presence of additional identical elements in a process, method, article, or apparatus that comprises the element.
The Doherty power amplifier in the prior art has a great disadvantage: bandwidth problems. Many factors affect the bandwidth of the Doherty power amplifier: (1) An offset line for phase compensation is arranged at the input end of the auxiliary power amplifier, but the compensation line cannot meet the phase compensation in the full frequency band, and the electric length of the compensation line can be correspondingly changed along with the frequency offset center point, so that the power amplifier cannot be matched with the optimal load. (2) In the traditional Doherty power amplifier, a lambda/4 impedance transformation line is arranged at the output end of the main power amplifier to play a role of load modulation. However, the selection of the λ/4 microstrip line to the frequency can greatly limit the bandwidth of the Doherty power amplifier, so that the Doherty power amplifier can only work in a narrower frequency band, and the gradual change from 2Zopt to Zopt is not possible in the whole frequency band.
When the lambda/4 impedance transformation line in the traditional Doherty power amplifier structure is used as a load modulation network,
The impedance value of the input end is:
according to the relative bandwidth formula of the microstrip line:
the ratio of the impedance Zin of the input port and the impedance ZL of the output port of the microstrip line is defined as an impedance transformation ratio:
Where Γ is the maximum acceptable reflection coefficient in the circuit. As can be seen from the above formula, the relative bandwidth of the microstrip line can be controlled by the impedance transformation ratio, so that the requirement of expanding the bandwidth can be achieved by reducing r, i.e. reducing the impedance transformation ratio.
And, the 3dB bandwidth of the matching network can be represented by its center frequency and quality factor:
Wherein: bw=fh-fL (bandwidth equal to high frequency reduction),
F0 = vfh x fL (square of center frequency equals product of high frequency and low frequency);
in the high-order matching network, a certain section of impedance value is: zn=rn+ jXn (reactance);
The quality factor is estimated using the maximum value of the node factors Qn,
Therefore, the bandwidth of the Doherty power amplifier can be improved by reducing the Q value of the matching network.
Furthermore, in the conventional Doherty structure, the quarter-wavelength impedance transformation line has only one degree of freedom of impedance (i.e., devices of the matching network such as inductance, capacitance, resistance, the number of microstrip lines), as shown in fig. 2, which is used as load modulation so that there is a great limitation in designing the matching circuit, and thus the bandwidth of the Doherty power amplifier can be extended by expanding the degree of freedom of the load modulation network
Fig. 3 is a schematic diagram of an embodiment of a Doherty power amplifier for wireless communication according to the present application.
In the specific embodiment shown in fig. 3, the Doherty power amplifier for wireless communication of the present application includes a power distribution module, a main amplifying circuit module, an auxiliary amplifying circuit module, and a load modulation network module.
The power distribution module is used for distributing the input signals into multipath signals with preset phase differences and outputting the multipath signals to the main amplifying circuit module and the auxiliary amplifying circuit module respectively; the main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network, and is used for carrying out power amplification on an input main amplifying circuit signal to obtain a main amplifying signal; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network, and is used for carrying out power amplification on an input auxiliary amplifying circuit signal to obtain an auxiliary amplifying signal; the load modulation network module is used for carrying out load modulation on the synthesized signal synthesized by the main amplified signal and the auxiliary amplified signal.
The main input matching network and the auxiliary input matching network are subjected to step matching through multistage microstrip line cascading.
According to the application, step matching is performed through cascade connection of the multistage microstrip lines, so that the impedance transformation ratio can be reduced, the Q value is reduced, the bandwidth of the Doherty power amplifier for wireless communication is expanded, and the full-band internal compensation line is realized to meet phase compensation.
In one embodiment of the present application, the power distribution module uses an equal power distributor with a power ratio of 1:1.
In one embodiment of the application, the load modulation network module comprises an inverted T-shaped structure consisting of a plurality of microstrip lines.
The design of the load modulation network as a T-type structure, with only one degree of freedom of impedance with respect to the quarter-wavelength impedance transformation line, enables one free variable to be extended to four free variables, as shown in figure 4,
Characterization from cascading properties of ABCD matrices:
the input impedance of the network can be expressed as:
from the above formula, when ZM, BO, ZM, SAT, ZMT, BO and ZMT, SAT are determined, the parameters of the inverted T structure can be calculated, thereby determining the four free classifications Z1, θ1, Z2 and θ2 of the structure.
The four free classification variables can enable the circuit design of the Doherty power amplifier for wireless communication to be more flexible and the adjustment range to be larger, thereby realizing the bandwidth required by the Doherty power amplifier for wireless communication.
In one embodiment of the present application, the design is based on a GaN HEMT rf transistor with the following performance parameters:
Operating frequency: 2.8-3.8GHz;
saturated output power: 42.8-44.2dBm;
Saturated drain efficiency: 62-68%;
Rollback drain efficiency @6dB:38-43%.
In one embodiment of the present application, according to the general operation mode of the power amplifier being the class AB mode, the static operation point of the main power amplifier is selected, the drain voltage VDS of the main power amplifier is 28V, the corresponding static drain current IDS is 0.235mA, and the gate voltage VGS thereof is-2.7V, which is referred to the datasheet of the transistor. However, it should be noted that the auxiliary power amplifier is operated in class C, and when the static operating point is selected, the gate bias voltage needs to be considered to be different, so that the parameter settings when the Source-pull and Load-pull are performed on the transistors are also different, and the input/output optimal impedance values of the corresponding transistors are also different.
In a specific embodiment of the present application, as shown in fig. 7, the main input matching network includes a first matching microstrip line T1, a first matching capacitor C1, a second matching microstrip line T2, an RC parallel circuit formed by the second matching capacitor C2 and the first matching resistor R1, a third matching microstrip line T3, and a fourth matching microstrip line T4, which are sequentially connected in series;
The auxiliary input matching network comprises an RC parallel circuit formed by an eighth matching microstrip line T8, a fourth matching capacitor C4, a ninth matching microstrip line T9, a fifth matching capacitor C5 and a second matching resistor R2 which are connected in series, a tenth matching microstrip line T10 and an eleventh matching microstrip line T11.
The multi-stage microstrip cascade formed by the first matching microstrip line T1, the first matching capacitor C1, the second matching microstrip line T2, the RC parallel circuit formed by the second matching capacitor C2 and the first matching resistor R1, the third matching microstrip line T3 and the fourth matching microstrip line T4 can reduce the impedance transformation ratio of the main amplifying circuit and the Q value, so that the bandwidth of the Doherty power amplifier for wireless communication is expanded, and the full-band internal compensation line meets the phase compensation.
The multi-stage microstrip cascade formed by the eighth matching microstrip line T8, the fourth matching capacitor C4, the ninth matching microstrip line T9, the fifth matching capacitor C5 and the second matching resistor R2, the tenth matching microstrip line T10 and the eleventh matching microstrip line T11 can reduce the impedance transformation ratio of the main power amplifier and the Q value, thereby expanding the bandwidth of the Doherty power amplifier for wireless communication and realizing that the compensation line in the full frequency band meets the phase compensation.
Wherein the first matching resistor R1 and the second matching resistor R2 in the RC circuit are capable of filtering noise in the input loops of the main power amplifier and the auxiliary power amplifier.
In a specific embodiment of the present application, as shown in fig. 7, the main output matching network includes a fifth matching microstrip line T5, a sixth matching microstrip line T6, a seventh matching microstrip line T7, and a third matching capacitor C3 connected in series;
The auxiliary output matching network includes a twelfth matching microstrip line T12, a thirteenth matching microstrip line T13, a fourteenth matching microstrip line T14, and a sixth matching capacitor C6 connected in series.
In a specific embodiment of the present application, as shown in fig. 7, the inverted T-shaped structure includes a first modulation microstrip line TO1, a second modulation microstrip line TO2, a third modulation microstrip line TO3, a fourth modulation microstrip line TO4, and a fifth modulation microstrip line TO5, which are sequentially connected in series, and the second modulation microstrip line TO2 and the third modulation microstrip line TO2 are open-circuit stubs.
The four degrees of freedom provided by the first modulation microstrip line TO1, the second modulation microstrip line TO2, the third modulation microstrip line TO3 and the fourth modulation microstrip line TO4 in the inverted T structure in this specific embodiment can make the circuit design of the Doherty power amplifier for wireless communication more flexible and the adjustment range larger, thereby realizing the bandwidth required by the Doherty power amplifier for wireless communication.
In a specific embodiment of the present application, the Doherty power amplifier for wireless communication of the present application further includes an impedance balancing module, as shown in fig. 5 and 7, which includes a first connection microstrip line T15 connecting the main output matching network and the load modulation network module, and a second connection microstrip line T16 connecting the auxiliary output matching network and the load modulation network module.
The impedance balancing module is capable of balancing the impedance at the output of the main power amplifier and the auxiliary power amplifier.
In a specific embodiment of the present application, the Doherty power amplifier for wireless communication further includes a power circuit module, as shown in fig. 6 and 7, where the power circuit module includes a third connection microstrip line T17, a fourth connection microstrip line T18, a first voltage stabilizing capacitor C7, and a second voltage stabilizing capacitor C8, a dc power supply is connected to the main amplifying circuit module through the third connection microstrip line T17, the first voltage stabilizing capacitor C7 and the third connection microstrip line T17 are connected in parallel near the power supply end and then grounded, the dc power supply is connected to the auxiliary amplifying circuit module through the fourth connection microstrip line T18, and the second voltage stabilizing capacitor C8 and the fourth connection microstrip line T18 are connected in parallel near the power supply end and then grounded.
The direct current power supply provides power for the main amplifying circuit module and the auxiliary amplifying circuit module, and ripple waves exist in power supply of the direct current power supply end, so that a large capacitor is connected in parallel to a circuit close to the power supply end to filter the ripple waves.
In a specific embodiment of the present application, the Doherty power amplifier for wireless communication further includes a bias circuit module, as shown in fig. 6, where the bias circuit module includes a first connection resistor R3, a second connection resistor R4, a third voltage stabilizing capacitor C9, and a fourth voltage stabilizing capacitor C10, a dc bias voltage Vgs is used to connect to the main amplifying circuit module through the first connection resistor R3, the third voltage stabilizing capacitor C9 and the first connection resistor R3 are connected in parallel and then grounded, the dc bias voltage Vgs is connected to the auxiliary amplifying circuit module through the second connection resistor R4, and the fourth voltage stabilizing capacitor C10 and the second connection resistor R4 are connected in parallel and then grounded.
The bias circuit module is arranged to be too public bias voltage of the main amplifying circuit module and the auxiliary amplifying circuit module, and a larger capacitor is connected in parallel to the voltage end, so that ripple waves existing in the direct current bias voltage can be filtered.
In a specific embodiment of the application, the main power amplifier comprises a first MOS tube, the auxiliary power amplifier comprises a second MOS tube, and the first MOS tube and the second MOS tube are MOS tubes with the same structure type.
In one embodiment of the application, a grid electrode of the first MOS tube is connected with a main input matching network, a drain electrode of the first MOS tube is connected with a main output matching network, and a source electrode of the first MOS tube is grounded;
the grid electrode of the second MOS tube is connected with the main input matching network, the drain electrode of the second MOS tube is connected with the main output matching network, and the source electrode of the second MOS tube is grounded.
Preferably, the Doherty power amplifier for wireless communication comprises a power distribution module, a main amplifying circuit module, an auxiliary amplifying circuit module, a load modulation network module, an impedance balancing module, a power supply circuit module and a bias circuit module, wherein a main input matching network of the main amplifying circuit module and an auxiliary input matching network of the auxiliary amplifying circuit module are subjected to step matching through multistage microstrip line cascading, the load modulation network module comprises an inverted T-shaped structure formed by a plurality of microstrip lines, the specific circuit structure is as shown in fig. 7, the power distribution module adopts an equal power distributor with the power ratio of 1:1, a static working point of the main power amplifier is selected, drain voltage VDS of the main power amplifier is selected to be 28V by referring to datasheet of a transistor, corresponding static drain current IDS is 0.235mA, gate voltage VGS of the auxiliary power amplifier can be selected to be-2.7V, and the auxiliary power amplifier works in class C.
The specific example can enhance the broadband performance of the Doherty power amplifier for wireless communication, the power amplifier can support the frequency band range of 2.8-3.8GHz, the saturated drain electrode efficiency and the 6dB back-off drain electrode efficiency are high, the saturated drain electrode efficiency can reach 68% at most, and the 6dB back-off drain electrode efficiency can reach 43% at most.
In the embodiments provided in the present application, it should be understood that the disclosed method and system may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, for example, the division of the units is merely a division of one logic function, and there may be another division manner in which the units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some interface, device or unit indirect coupling or communication connection, which may be typical, mechanical or otherwise.
The elements described as separate may or may not be physically separate, and elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
The foregoing description is only illustrative of the present application and is not intended to limit the scope of the application, and all equivalent structural changes made by the present application and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the present application.
Claims (9)
1. A Doherty power amplifier for wireless communication, comprising: the power distribution module, the main amplifying circuit module, the auxiliary amplifying circuit module and the load modulation network module;
The power distribution module is used for distributing the input signals into multipath signals with preset phase differences and outputting the multipath signals to the main amplifying circuit module and the auxiliary amplifying circuit module respectively; the main amplifying circuit module comprises a main power amplifier, a main input matching network and a main output matching network, and is used for carrying out power amplification on an input main amplifying circuit signal to obtain a main amplifying signal; the auxiliary amplifying circuit module comprises an auxiliary power amplifier, an auxiliary input matching network and an auxiliary output matching network, and is used for carrying out power amplification on an input auxiliary amplifying circuit signal to obtain an auxiliary amplifying signal; the load modulation network module is used for carrying out load modulation on a synthesized signal synthesized by the main amplified signal and the auxiliary amplified signal,
The main input matching network and the auxiliary input matching network perform step matching through multistage microstrip line cascade connection,
Wherein the main input matching network comprises a RC parallel circuit, a third matching microstrip line and a fourth matching microstrip line which are sequentially connected in series and composed of a first matching microstrip line, a first matching capacitor, a second matching microstrip line, a second matching capacitor and a first matching resistor,
The auxiliary input matching network comprises an RC parallel circuit, a tenth matching microstrip line and an eleventh matching microstrip line, wherein the RC parallel circuit is formed by an eighth matching microstrip line, a fourth matching capacitor, a ninth matching microstrip line, a fifth matching capacitor and a second matching resistor which are connected in series.
2. The Doherty power amplifier for wireless communication of claim 1, wherein,
The load modulation network module comprises an inverted T-shaped structure composed of a plurality of microstrip lines.
3. The Doherty power amplifier for wireless communication of claim 1, wherein,
The main output matching network comprises a fifth matching microstrip line, a sixth matching microstrip line, a seventh matching microstrip line and a third matching capacitor which are connected in series;
the auxiliary output matching network comprises a twelfth matching microstrip line, a thirteenth matching microstrip line, a fourteenth matching microstrip line and a sixth matching capacitor which are connected in series.
4. The Doherty power amplifier for wireless communication of claim 2, wherein,
The inverted T-shaped structure comprises a first modulation microstrip line, a second modulation microstrip line, a third modulation microstrip line, a fourth modulation microstrip line and a fifth modulation microstrip line which are sequentially connected in series, wherein the second modulation microstrip line and the third modulation microstrip line are open-circuit stub lines.
5. The Doherty power amplifier for wireless communication of claim 1, further comprising an impedance balancing module,
The impedance balancing module comprises a first connection microstrip line connecting the main output matching network and the load modulation network module, and a second connection microstrip line connecting the auxiliary output matching network and the load modulation network module.
6. The Doherty power amplifier for wireless communication of claim 1, further comprising a power supply circuit module,
The power circuit module comprises a third connection microstrip line, a fourth connection microstrip line, a first voltage stabilizing capacitor and a second voltage stabilizing capacitor, wherein the direct-current power supply is connected with the main amplifying circuit module through the third connection microstrip line, the first voltage stabilizing capacitor is grounded after being connected with the third connection microstrip line in parallel near a power end, the direct-current power supply is connected with the auxiliary amplifying circuit module through the fourth connection microstrip line, and the second voltage stabilizing capacitor is grounded after being connected with the fourth connection microstrip line in parallel near the power end.
7. The Doherty power amplifier for wireless communication of claim 6, further comprising a bias circuit module,
The bias circuit module comprises a first connecting resistor, a second connecting resistor, a third voltage stabilizing capacitor and a fourth voltage stabilizing capacitor, wherein direct-current bias voltage is used for being connected with the main amplifying circuit module through the first connecting resistor, the third voltage stabilizing capacitor and the first connecting resistor are connected in parallel and then grounded, the direct-current bias voltage is connected with the auxiliary amplifying circuit module through the second connecting resistor, and the fourth voltage stabilizing capacitor and the second connecting resistor are connected in parallel and then grounded.
8. The Doherty power amplifier for wireless communication of claim 1, wherein,
The main power amplifier comprises a first MOS tube, the auxiliary power amplifier comprises a second MOS tube, and the first MOS tube and the second MOS tube are MOS tubes with the same structural type.
9. The Doherty power amplifier for wireless communication of claim 8, wherein,
The grid electrode of the first MOS tube is connected with the main input matching network, the drain electrode of the first MOS tube is connected with the main output matching network, and the source electrode of the first MOS tube is grounded;
The grid electrode of the second MOS tube is connected with the main input matching network, the drain electrode of the second MOS tube is connected with the main output matching network, and the source electrode of the second MOS tube is grounded.
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| CN114448366B (en) * | 2022-02-09 | 2024-03-12 | 苏州英嘉通半导体有限公司 | Power amplifier |
| CN114978064A (en) * | 2022-05-16 | 2022-08-30 | 维沃移动通信有限公司 | Power amplifier circuit, radio frequency circuit, electronic device, and adjustment method |
| CN115065329A (en) * | 2022-07-20 | 2022-09-16 | 中电国基南方集团有限公司 | Grid voltage switching dual-channel selective power amplifier circuit |
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| CN106470015A (en) * | 2015-08-20 | 2017-03-01 | 中兴通讯股份有限公司 | Symmetrical Doherty Doherty power amplifier device and power amplifier |
| CN206211949U (en) * | 2016-09-28 | 2017-05-31 | 中山大学 | A kind of double frequency Doherty power amplifier |
| CN107425814B (en) * | 2017-08-07 | 2021-01-29 | 杭州电子科技大学 | Broadband Doherty power amplifier based on compensation parasitic capacitance |
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