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CN113130471A - Driving chip, semiconductor circuit and preparation method thereof - Google Patents

Driving chip, semiconductor circuit and preparation method thereof Download PDF

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Publication number
CN113130471A
CN113130471A CN202110460221.7A CN202110460221A CN113130471A CN 113130471 A CN113130471 A CN 113130471A CN 202110460221 A CN202110460221 A CN 202110460221A CN 113130471 A CN113130471 A CN 113130471A
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CN
China
Prior art keywords
circuit
driving
voltage side
bridge arm
fan
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Pending
Application number
CN202110460221.7A
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Chinese (zh)
Inventor
谢荣才
王敏
左安超
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Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huixin Semiconductor Co Ltd
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Application filed by Guangdong Huixin Semiconductor Co Ltd filed Critical Guangdong Huixin Semiconductor Co Ltd
Priority to CN202110460221.7A priority Critical patent/CN113130471A/en
Publication of CN113130471A publication Critical patent/CN113130471A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1203—Circuits independent of the type of conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/084—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention relates to a driving chip, a semiconductor circuit and a preparation method thereof.A bridge arm control input signal received by a driving bridge arm input end group is used for outputting a bridge arm driving output signal to a bridge arm module through a bridge arm driving output end group according to the received bridge arm control input signal so as to enable the bridge arm module to drive and control a load; the fan driving circuit is connected with the temperature detection circuit in a coupling mode, the output end of the fan driving circuit is connected with the fan switch module, the fan is connected to the fan switch module, the fan driving circuit controls the on-off of the fan switch module according to the current temperature detected by the temperature detection circuit, so that the fan switch module controls the starting or stopping of the fan, the heat of the chip circuit is dissipated by the driving fan according to the condition of the internal temperature of the chip circuit, the phenomenon that the chip circuit is burnt out due to the fact that the internal temperature of the chip circuit is too high is avoided, and the heat dissipation and cooling effects of the chip circuit are improved while the high-voltage side and/or low-voltage side driving function is achieved.

Description

Driving chip, semiconductor circuit and preparation method thereof
Technical Field
The invention relates to a driving chip, a semiconductor circuit and a preparation method thereof, and belongs to the technical field of semiconductor circuit application.
Background
A semiconductor circuit is a power-driven type product that combines power electronics and integrated circuit technology. The semiconductor circuit integrates a power switching device and a high-voltage driving circuit, and incorporates a fault detection circuit for detecting an overvoltage, an overcurrent, an overheat, and the like. The semiconductor circuit receives a control signal of an MCU (micro controller Unit) to drive a subsequent circuit to operate, and sends a state detection signal of the system back to the MCU. Compared with the traditional discrete scheme, the semiconductor circuit gains a bigger and bigger market with the advantages of high integration degree, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: at present, a semiconductor circuit integrates one functional module or integrates a plurality of different functional modules, and the semiconductor circuit has the advantages of high integration level, small volume and quick temperature rise. Adopt the heat dissipation of plus radiator, be difficult to satisfy semiconductor circuit's heat dissipation, in some application environment very poor occasions, the semiconductor circuit high temperature appears easily, and then burns out semiconductor circuit, current semiconductor circuit can't carry out self-adaptation cooling according to self temperature in addition and adjust, and the cooling effect is poor.
Disclosure of Invention
Therefore, the problems that the semiconductor circuit is easily over-high in temperature and further burnt out in the traditional design, preparation and application processes of the semiconductor circuit, and the existing semiconductor circuit cannot be subjected to self-adaptive cooling regulation according to the self temperature and is poor in cooling effect are necessarily solved. A driving chip, a semiconductor circuit and a method for manufacturing the same are provided.
Specifically, the present invention discloses a driving chip, comprising:
the bridge arm driving circuit comprises a driving bridge arm input end group and a bridge arm driving output end group, and is configured to output bridge arm driving output signals to the bridge arm module through the bridge arm driving output end group according to bridge arm control input signals received by the bridge arm driving input end group;
the temperature detection circuit is used for detecting the current temperature;
the input end of the fan driving circuit is coupled with the temperature detection circuit, the output end of the fan driving circuit is coupled with the fan switch module, and the fan driving circuit is configured to control the on-off of the fan switch module according to the current temperature detected by the temperature detection circuit so that the fan switch module controls the starting or stopping of the fan.
Optionally, the fan driving circuit is configured to control the fan driving circuit to operate according to the current temperature, so that the fan driving circuit controls the on-off of the fan switch module.
Optionally, the PFC driver circuit further includes a PFC driver input terminal group and a PFC driver output terminal group, and the PFC driver circuit is configured to output a PFC driver output signal to the PFC switch module through the PFC driver output terminal group according to a PFC control input signal received by the PFC driver input terminal group.
Optionally, the bridge arm driving circuit includes a high-voltage side driving circuit and a low-voltage side driving circuit; the bridge arm module comprises a high-voltage side bridge arm and a low-voltage side bridge arm;
the high-voltage side driving circuit comprises a high-voltage side driving input end group and a high-voltage side driving output end group, and is configured to output a high-voltage side driving output signal to the high-voltage side bridge arm through the high-voltage side driving output end group according to a high-voltage side control input signal received by the high-voltage side driving input end group; the low-voltage side driving circuit comprises a low-voltage side driving input end group and a low-voltage side driving output end group, and is configured to output a low-voltage side driving output signal to the low-voltage side bridge arm through the low-voltage side driving output end group according to a low-voltage side control input signal received by the low-voltage side driving input end group.
Optionally, the high-voltage side driving circuit includes a high-voltage side power input end group, a bootstrap circuit, and a high-voltage side under-voltage protection circuit coupled to the bootstrap circuit, and the bootstrap circuit is coupled to the high-voltage side power input end group; the bootstrap circuit is configured to bootstrap and supply power to the high-voltage side drive circuit according to the power supply signal input by the high-voltage side power supply input end group; the high-voltage side undervoltage protection circuit is configured to perform undervoltage on-off control on the high-voltage side drive circuit according to an output signal of the bootstrap circuit.
Optionally, the power supply further comprises a power supply circuit and a power supply undervoltage protection circuit coupled to the power supply circuit; the power circuit is respectively coupled with the high-voltage side driving circuit, the low-voltage side driving circuit and the PFC driving circuit.
Optionally, the protection circuit further comprises an overcurrent protection circuit, an overvoltage protection circuit and an overtemperature protection circuit;
the first end of the overcurrent protection circuit is coupled with the power supply circuit, and the second end of the overcurrent protection circuit is respectively coupled with the high-voltage side drive circuit, the low-voltage side drive circuit and the PFC drive circuit; the first end of the overvoltage protection circuit is coupled with the power supply circuit, and the second end of the overvoltage protection circuit is respectively coupled with the high-voltage side drive circuit, the low-voltage side drive circuit and the PFC drive circuit; the first end of the over-temperature protection circuit is coupled with the temperature detection circuit, and the second end of the over-temperature protection circuit is respectively coupled with the high-voltage side drive circuit, the low-voltage side drive circuit and the PFC drive circuit.
Optionally, the system further comprises an interlock and dead zone circuit, an enabling circuit and an error reporting circuit;
the interlocking and dead zone circuit is coupled between the high-voltage side driving circuit and the low-voltage side driving circuit; the enabling circuit is respectively coupled with the high-voltage side driving circuit, the low-voltage side driving circuit and the PFC driving circuit; the error reporting circuit is respectively coupled with the overcurrent protection circuit, the overvoltage protection circuit, the over-temperature protection circuit and the power supply undervoltage protection circuit.
The present invention also discloses a semiconductor circuit comprising:
a circuit substrate on which an insulating layer is provided;
a circuit layer disposed on the insulating layer;
the first ends of the pins are respectively electrically connected with the circuit layer;
the sealing body wraps the circuit substrate and the circuit layer connected with the pins;
the second end of each pin is led out from the first side surface of the sealing body; the circuit layer comprises a bridge arm module, a fan switch module and any one of the driving chips; the bridge arm module and the fan switch module are respectively coupled and connected with the driving chip.
The invention also discloses a preparation method of the semiconductor circuit, which comprises the following steps:
providing a circuit substrate;
preparing an insulating layer on a circuit substrate;
preparing a circuit layer on the insulating layer; the circuit layer comprises a bridge arm module, a fan switch module and any one of the driving chips; the bridge arm module and the fan switch module are respectively connected with the driving chip through bonding wires;
the circuit layer is provided with a plurality of pins, and the first ends of the pins are respectively connected with the circuit layer through metal wires;
and performing injection molding on the circuit substrate provided with the circuit layer and the plurality of pins through a packaging mold to form a sealing body, and leading out the second ends of the pins from the first side surface of the sealing body respectively to form the semiconductor circuit.
One of the above technical solutions has the following advantages and beneficial effects:
in each embodiment of the driving chip, the bridge arm control input signal received by the driving bridge arm input end group of the bridge arm driving circuit is used, and according to the received bridge arm control input signal, the bridge arm driving output end group of the bridge arm driving circuit outputs a bridge arm driving output signal to the bridge arm module so that the bridge arm module performs driving control on the high-voltage side load and/or the low-voltage side load; the fan driving circuit comprises a fan driving circuit, a fan switch module, a fan, a temperature detection circuit, a fan switch module, a fan switch, a temperature detection circuit, a fan switch module and a fan switch module, wherein the input end of the fan driving circuit is coupled with the temperature detection circuit, the fan is connected to the fan switch module, and then the fan driving circuit controls the on-off of the fan switch module according to the current temperature detected by the temperature detection circuit, so that the fan switch module controls the start or stop of the fan, thereby realizing the heat dissipation of the chip circuit according to the internal temperature of the chip circuit by the driving fan, avoiding the chip circuit from being burnt.
Drawings
Fig. 1 is a schematic diagram of a first circuit structure of a driving chip according to an embodiment of the invention;
fig. 2 is a schematic diagram of a second circuit structure of the driving chip according to the embodiment of the invention;
FIG. 3 is a schematic circuit diagram of a semiconductor circuit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a package structure of a semiconductor circuit according to an embodiment of the present invention;
FIG. 5 is a flow chart of steps for fabricating a semiconductor circuit according to an embodiment of the present invention.
Reference numerals:
the driving circuit comprises a driving chip 100, a bridge arm driving circuit 120, a high-voltage side driving circuit 122, a bootstrap circuit 312, a high-voltage side under-voltage protection circuit 314, a low-voltage side driving circuit 124, a temperature detection circuit 130, a fan driving circuit 140, a fan driving logic circuit 150, a PFC driving circuit 160, a power supply circuit 170, a power supply under-voltage protection circuit 180, an overcurrent protection circuit 190, an over-temperature protection circuit 210, an interlocking and dead zone circuit 220, an enabling circuit 230, an error reporting circuit 240, a circuit substrate 310, pins 320, a sealing body 330 and bonding wires 340.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
In one embodiment, as shown in fig. 1, the present invention provides a driving chip, where the driving chip 100 includes a bridge arm driving circuit 120, a temperature detecting circuit 130, and a fan driving circuit 140. The bridge arm driving circuit 120 comprises a driving bridge arm input end group (LIN1, LIN2, LIN3, HIN1, HIN2 and HIN3) and a bridge arm driving output end group (LO1, LO2, LO3, HO1, HO2 and HO3), and the bridge arm driving circuit 120 is configured to output bridge arm driving output signals to the bridge arm module through the bridge arm driving output end group according to bridge arm control input signals received by the bridge arm driving input end group; the temperature detection circuit 130 is used for detecting the current temperature; the input end of the fan driving circuit 140 is coupled to the temperature detection circuit 130, the output end of the fan driving circuit 140 is coupled to the fan switch module, and the fan driving circuit 140 is configured to control the on/off of the fan switch module according to the current temperature detected by the temperature detection circuit 130, so that the fan switch module controls the start or stop of the fan.
The bridge arm driving circuit 120 may be configured to drive and control the bridge arm modules to be turned on or off; the bridge arm module can be used for controlling the high-voltage side load to work or the low-voltage side load to work and can also be used for respectively controlling the high-voltage side load and the low-voltage side load to work. The bridge arm module can be a full bridge arm module, and the bridge arm module can also be a half bridge arm module. The bridge arm driving circuit 120 comprises a driving bridge arm input end group (LIN1, LIN2, LIN3, HIN1, HIN2 and HIN3) and a bridge arm driving output end group (LO1, LO2, LO3, HO1, HO2 and HO3), wherein the driving bridge arm input end group can be used for inputting bridge arm control input signals, and can comprise a plurality of high-voltage side driving bridge arm input ends (HIN1, HIN2 and HIN3) and/or a plurality of low-voltage side driving bridge arm input ends (LIN1, LIN2 and LIN 3); the set of drive leg outputs may be used to output leg drive output signals, which may include a plurality of high side drive leg outputs (HO1, HO2, HO3) and/or a plurality of low side drive leg outputs (LO1, LO2, LO 3). The temperature detection circuit 130 may include a temperature sensing device (e.g., a thermistor) by which a current temperature of a location (i.e., an internal circuit of the chip) where the temperature sensing device is located may be detected. The fan driving circuit 140 can be used to drive the fan switch module to be turned on or off, and then the fan switch module can further control the start or stop of the fan according to the driving control of the fan driving circuit 140. In one example, the fan is a heat rejection fan, for example the fan may be a 12V (volt) dc fan.
Specifically, bridge arm control input signals are input to driving bridge arm input end groups (LIN1, LIN2, LIN3, HIN1, HIN2 and HIN3) of the bridge arm driving circuit 120, then bridge arm control input signals received by the driving bridge arm input end groups of the bridge arm driving circuit 120 are output to bridge arm modules through the bridge arm driving output end groups (LO1, LO2, LO3, HO1, HO2 and HO3) of the bridge arm driving circuit 120 according to the received bridge arm control input signals, so that the bridge arm modules drive and control high-voltage side loads and/or low-voltage side loads, and the high-voltage side and/or low-voltage side driving function of the chip is realized.
Furthermore, the input end of the fan driving circuit 140 is coupled with the temperature detection circuit 130, the input end of the fan driving circuit 140 is coupled with the fan switch module, after the electric connection between the fan and the fan switch module is established, the fan driving circuit controls the on-off of the fan switch module according to the current temperature detected by the temperature detection circuit 130, so that the fan switch module controls the start or stop of the fan, thereby realizing the heat dissipation of the chip circuit by driving the fan according to the internal temperature of the chip circuit, avoiding the chip circuit from being burnt out due to the overhigh internal temperature of the chip circuit, and improving the heat dissipation and cooling effects of the chip circuit while realizing the driving function of the high-voltage side and/or the low-voltage side.
In some embodiments of the present invention, as shown in fig. 1 and 2, the driving chip 100 further includes a fan driving logic circuit 150 connected between the temperature detecting circuit 130 and the fan driving circuit 140, and the fan driving logic circuit 150 is configured to control the fan driving circuit 140 to operate according to the current temperature, so that the fan driving circuit 140 controls the on/off of the fan switch module.
The fan driving logic circuit 150 has a logic processing function, for example, the fan driving logic circuit 150 may be configured to process the temperature data and control the fan driving circuit 140 to operate according to the processing result.
Specifically, based on the fan driving logic circuit 150 coupled between the temperature detection circuit 130 and the fan driving logic circuit 140, the temperature detection circuit 130 can detect the temperature of the current environment in real time, and transmit the detected current temperature to the fan driving logic circuit 150, and the fan driving logic circuit 150 can compare the current temperature with the temperature threshold, and when the current temperature exceeds the temperature threshold, the fan driving circuit 140 is controlled to operate, so that the fan driving circuit 140 drives the fan switch module to be turned on, and then the fan is started to dissipate heat, and the fan is driven to dissipate heat for the chip circuit according to the internal temperature of the chip circuit,
further, the fan driving logic circuit 150 may be a digital logic circuit, for example, the fan driving logic circuit 150 may convert the current temperature analog signal transmitted by the temperature detection circuit 130 to obtain a current temperature digital signal, compare the current temperature digital signal with a temperature threshold, and control the fan driving circuit 140 according to the processed result.
In one example, the fan drive logic 150 may also include temperature protection, soft start, auto-restart, protection mode selection, and the like.
In some embodiments of the present invention, as shown in fig. 2, the driver chip 100 further includes a PFC driver circuit 160, where the PFC driver circuit 160 includes a PFC driver input terminal group (PFCIN) and a PFC driver output terminal group (PFCOUT), and the PFC driver circuit 160 is configured to output a PFC driver output signal to the PFC switch module through the PFC driver output terminal group (PFCOUT) according to a PFC control input signal received by the PFC driver input terminal group (PFCIN).
The PFC driving circuit 160 may be configured to control on/off of the PFC switch module, the PFC driving circuit 160 includes a PFC driving input terminal group (PFCIN) and a PFC driving output terminal group (PFCOUT), the PFC driving input terminal group (PFCIN) may be configured to input a PFC control input signal, and the PFC driving input terminal group (PFCIN) may include at least one PFC driving input terminal; the PFC driving output terminal set (PFCOUT) may be configured to output a PFC driving output signal, and may include at least one PFC driving output terminal. A PFC (Power Factor Correction) switch module may be used to improve the Power Factor of the device. It should be noted that the power factor refers to a relationship between the effective power and the total power consumption (apparent power), that is, a ratio of the effective power divided by the total power consumption (apparent power). The power factor can measure the effective utilization degree of the power, and when the power factor value is larger, the power utilization rate is higher. In one example, the PFC switch module may include a first IGBT (Insulated Gate Bipolar Transistor), a fast recovery diode, and a schottky diode, wherein a Gate of the first IGBT is coupled to a set of PFC driving outputs of the PFC driving circuit, the fast recovery diode D2 is connected between a collector and an emitter of the first IGBT, and the schottky diode is connected between the collector and a power supply.
Specifically, the PFC driving circuit 160 is disposed in the driving chip 100, the PFC switching module is disposed outside the driving chip 100, and the PFC switching module is coupled to a PFC driving output terminal group (PFCOUT) of the PFC driving circuit 160, so that when a PFC control input signal is input to the PFC driving input terminal group (PFCIN) of the PFC driving circuit 160, the PFC driving input terminal group (PFCIN) of the PFC driving circuit 160 may receive the PFC control input signal and output the PFC driving output signal to the PFC switching module through the PFC driving output terminal group (PFCOUT) according to the received PFC control input signal, so that the PFC switching module performs PFC adjustment on a corresponding device circuit, thereby implementing the PFC driving function of the chip.
In some embodiments of the present invention, as shown in fig. 1 and 2, bridge arm drive circuit 120 includes a high-side drive circuit 122 and a low-side drive circuit 124; the bridge arm module comprises a high-voltage side bridge arm and a low-voltage side bridge arm; the high-voltage side driving circuit 122 comprises a high-voltage side driving input end group (HIN1, HIN2 and HIN3) and a high-voltage side driving output end group (HO1, HO2 and HO3), and the high-voltage side driving circuit 122 is configured to output a high-voltage side driving output signal to the high-voltage side bridge arm through the high-voltage side driving output end group according to a high-voltage side control input signal received by the high-voltage side driving input end group; the low-side driver circuit includes a low-side driver input terminal group (LIN1, LIN2, LIN3) and a low-side driver output terminal group (LO1, LO2, LO3), and the low-side driver circuit 124 is configured to output a low-side driver output signal to the low-side bridge arm through the low-side driver output terminal group in accordance with a low-side control input signal received by the low-side driver input terminal group.
The high-voltage side driving circuit 122 may be used to drive and control the on/off of the high-voltage side bridge arm; the high side bridge arm (i.e., the upper bridge arm) may be used to control the high side load to operate. The high-voltage side bridge arm can be a full bridge arm, and the high-voltage side bridge arm can also be a half bridge arm. The high-side driver circuit 122 includes a high-side driver input group and a high-side driver output group, the high-side driver input group may be used to input a high-side control input signal, and the high-side driver input group may include a plurality of high-side driver inputs (e.g., including 3 high-side driver inputs); the high side set of drive outputs may be configured to output a high side drive output signal, and the high side set of drive outputs may include a plurality of high side drive outputs (e.g., 3 high side drive outputs). The low-voltage side driving circuit 124 can be used for driving and controlling the low-voltage side bridge arm to be switched on or switched off; the low-voltage side bridge arm (i.e., the lower bridge arm) can be used to control the low-voltage side load to work. The low-voltage side bridge arm can be a full-bridge arm, and the low-voltage side bridge arm can also be a half-bridge arm. The low-voltage side driving circuit comprises a low-voltage side driving input end group and a low-voltage side driving output end group, wherein the low-voltage side driving input end group can be used for inputting a low-voltage side control input signal, and the low-voltage side driving input end group can comprise a plurality of low-voltage side driving input ends (for example, 3 low-voltage side driving input ends); the low side driver output bank may be configured to output a low side driver output signal, and the low side driver output bank may include a plurality of low side driver outputs (e.g., 3 low side driver outputs).
Specifically, a high-voltage side control input signal is input to the high-voltage side drive input terminal group of the high-voltage side drive circuit 122, then the high-voltage side control input signal received by the high-voltage side drive input terminal group of the high-voltage side drive circuit 122 is output to the high-voltage side bridge arm through the high-voltage side drive output terminal group of the high-voltage side drive circuit 122 according to the received high-voltage side control input signal, so that the high-voltage side bridge arm performs drive control on a high-voltage side load, and thus the drive function of the high-voltage side bridge arm of the chip is realized.
Further, a low-voltage side control input signal is input to the low-voltage side drive input terminal group of the low-voltage side drive circuit 124, and then the low-voltage side control input signal received by the low-voltage side drive input terminal group of the low-voltage side drive circuit 124 is output to the low-voltage side bridge arm through the low-voltage side drive output terminal group of the low-voltage side drive circuit 124 according to the received low-voltage side control input signal, so that the low-voltage side bridge arm performs drive control on a low-voltage side load, and thus the drive function of the low-voltage side bridge arm of the chip is realized.
In some embodiments of the present invention, as shown in fig. 2, the high-side driving circuit 122 includes a high-side power input terminal set (VB1, VS1, VB2, VS2, VB3, VS3), a bootstrap circuit 312, and a high-side undervoltage protection circuit 314 coupled to the bootstrap circuit 312, where the bootstrap circuit 312 is coupled to the high-side power input terminal set; the bootstrap circuit 312 is configured to bootstrap the high-side driving circuit 122 according to the power signal input by the high-side power input terminal group; the high-side under-voltage protection circuit 314 is configured to perform under-voltage on-off control on the high-side driving circuit 122 according to an output signal of the bootstrap circuit.
Specifically, the high-side power input terminal set may be used to input operating power. The bootstrap circuit 312 is a circuit that increases the voltage by superimposing the capacitor discharge voltage and the power supply voltage using electronic elements such as a bootstrap boost diode and a bootstrap boost capacitor. The high-voltage side undervoltage protection circuit 314 can be used to detect the undervoltage condition of the high-voltage side driving circuit, and can timely disconnect the working power supply of the high-voltage side driving circuit when detecting that the high-voltage side driving circuit is in an undervoltage state, thereby playing an undervoltage protection role for the high-voltage side driving circuit.
In some embodiments of the present invention, as shown in fig. 2, the driving chip 100 further includes a power circuit 170 and an under-voltage power protection circuit 180 coupled to the power circuit 170; the power circuit 170 is coupled to the high-side driver circuit 122, the low-side driver circuit 124, and the PFC driver circuit 160, respectively.
The power circuit 170 has a voltage stabilizing function, and can be used to stably output a voltage (e.g., 5V voltage) for the chip internal circuit to operate. The power supply undervoltage protection circuit 180 can be used to detect the undervoltage condition of the power supply circuit 170, and can timely disconnect the output power supply of the power supply circuit 170 when detecting that the power supply circuit is in an undervoltage state, thereby playing an undervoltage protection role for the internal power supply of the chip.
Specifically, the power supply circuit 170 is coupled and connected based on the under-voltage power supply protection circuit 180, the power supply circuit 170 is respectively coupled and connected with the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160, and then the power supply circuit 170 can stably supply power to the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160 respectively, and meanwhile, the under-voltage power supply protection circuit 180 can detect the under-voltage condition of the power supply circuit 170 in real time, and can timely disconnect the output power supply of the power supply circuit 170 when detecting that the power supply circuit 170 is in the under-voltage state, so as to realize the under-voltage protection effect on the working power supplies of the high-voltage side driving circuit 122, the low-voltage.
In one example, the power circuit may include an LDO (low dropout linear regulator) circuit and a BANDGAP (BANDGAP reference) circuit, wherein the LDO circuit may be used to supply a voltage of 5V to all circuits inside the driver chip and to external circuits; the BANDGAP circuit can be used to supply a stable 1.2V voltage reference to all circuits inside the driver chip and to external circuits.
In some embodiments of the present invention, as shown in fig. 2, the driving chip 100 further includes an over-current protection circuit 190, an over-voltage protection circuit (not shown), and an over-temperature protection circuit 210. A first end of the over-current protection circuit 190 is coupled to the power supply circuit 170, and a second end of the over-current protection circuit 190 is coupled to the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160 respectively; a first end of an overvoltage protection circuit (not shown) is coupled with the power supply circuit 170, and a second end of the overvoltage protection circuit is coupled with the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160 respectively; a first end of the over-temperature protection circuit 210 is coupled to the temperature detection circuit 130, and a second end of the over-temperature protection circuit 210 is coupled to the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160, respectively.
The overcurrent protection circuit 190 can achieve an overcurrent protection function of the internal circuit of the driver chip. The overvoltage protection circuit can realize the overvoltage protection function of the internal circuit of the driving chip. The over-temperature protection circuit 210 can realize the over-temperature protection function of the internal circuit of the driving chip.
Specifically, the first end of the over-current protection circuit 190 is coupled to the power supply circuit 170, and the second end of the over-current protection circuit 190 is coupled to the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160, respectively, so that the over-current protection circuit 190 can monitor the working currents of the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 190 in real time, and can cut off the chip in time when the working current exceeding the current warning value is monitored, thereby preventing the chip from being over-high in working current and burning the chip, and playing a role in over-current protection of the internal circuit of the driving chip. The first end based on the overvoltage protection circuit is coupled with the power supply circuit 170, the second end of the overvoltage protection circuit is coupled with the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160 respectively, and then the overvoltage protection circuit can monitor the working voltages of the high-voltage side driving circuit 122, the low-voltage side driving circuit 124 and the PFC driving circuit 160 in real time, and when the working voltage is monitored to exceed a voltage early warning value, the chip can be cut off in time to work, so that the working voltage of the chip can be prevented from being too high, the chip is burnt, and the overvoltage protection effect of the internal circuit of the driving chip is achieved. The first end of the over-temperature protection circuit 210 is coupled with the temperature detection circuit 130, the second end of the over-temperature protection circuit 210 is coupled with the high-voltage side drive circuit 122, the low-voltage side drive circuit 124 and the PFC drive circuit 160, and the over-temperature protection circuit 210 can cut off the chip work in time according to the current temperature detected by the temperature detection circuit when the current temperature is monitored to exceed the temperature early warning value, so that the working voltage of the chip can be prevented from being too high, the chip is burnt, and the over-temperature protection effect on the internal circuits (the high-voltage side drive circuit, the low-voltage side drive circuit and the PFC drive circuit) of the drive chip is achieved.
In some embodiments of the present invention, as shown in fig. 2, the driving chip 100 further includes an interlock and dead-zone circuit 220, an enable circuit 230, and an error reporting circuit 240. The interlock and deadband circuit 220 is coupled between the high side driver circuit 122 and the low side driver circuit 124; the enable circuit 230 is coupled to the high-voltage side driver circuit 122, the low-voltage side driver circuit 124, and the PFC driver circuit 160; the error reporting circuit 240 is coupled to the over-current protection circuit 190, the over-voltage protection circuit, the over-temperature protection circuit 210, and the under-voltage power protection circuit 180, respectively.
The interlock and dead zone circuit 220 can be used to prevent the upper and lower switching tubes of the same bridge arm from being turned on simultaneously, and thus, the interlock and dead zone function between the high-voltage side driving circuit 122 and the low-voltage side driving circuit 124 is realized. The enable circuit 230 may be used to control the input and output of signals. The error reporting circuit 240 can be used to output an error reporting signal when the chip is under-voltage, over-current, over-voltage, over-temperature, etc.
Specifically, the interlock and dead zone circuit 220 is coupled between the high-voltage side driving circuit 122 and the low-voltage side driving circuit 124, so that the switching tube of the high-voltage side driving circuit 122 and the switching tube of the low-voltage side driving circuit 124 can be conducted at different times, and the interlock and dead zone function between the high-voltage side driving circuit 122 and the low-voltage side driving circuit 124 is realized. The enable circuit 230 is coupled to the high-voltage side driver circuit 122, the low-voltage side driver circuit 124 and the PFC driver circuit 160; when the enable circuit 230 outputs an enable signal (e.g., high level), the signal input channels of the high-side driver circuit 122, the low-side driver circuit 124 and the PFC driver circuit 160 are turned on; if the enable circuit does not output a signal (e.g., low), the signal input channels of the high-side driver circuit 122, the low-side driver circuit 124, and the PFC driver circuit 160 are turned off. Based on the error reporting circuit 240 respectively with overcurrent protection circuit 190, overvoltage protection circuit, excess temperature protection circuit 220 and power undervoltage protection circuit 180 coupling connection, and then when detecting that under-voltage, overcurrent, excessive pressure, the condition such as excess temperature appear in the chip inside, the error reporting circuit can outwards output the error reporting signal, reminds the user chip to break down.
In one example, the driving chip further integrates an oscillator, wherein the oscillator may be a duty-cycle adjustable oscillator. For example, the duty ratio of the MOS tube can be controlled according to the current temperature of the driving chip detected by the temperature detection circuit, so that the heat dissipation power of the fan can be adjusted. Wherein the higher the temperature, the larger the duty cycle of the MOS.
In one embodiment, as shown in fig. 3 and 4, the present invention provides a modular smart power system (MIPS) including a circuit substrate 310, a circuit layer (not shown), a plurality of pins 320, and a sealing body 330; an insulating layer (not shown) is provided on the circuit substrate 310; the circuit layer is arranged on the insulating layer; the first ends of the pins 320 are electrically connected to the circuit layer respectively; the sealing body 330 wraps the circuit substrate 310 and the circuit layer connected with the pins 320; wherein, the second end of each pin 320 is respectively led out from the first side surface of the sealing body 330; the circuit layer comprises a bridge arm module, a fan switch module and any one of the driving chips 100; the bridge arm module and the fan switch module are respectively coupled with the driving chip 100.
The circuit substrate 310 may be used to carry a circuit of the whole MIPS and corresponding components. The circuit substrate 310 may be made of a metal material, such as a rectangular plate made of aluminum of 1100, 5052, etc., and the thickness of the rectangular plate is much thicker than other layers, generally 0.8mm to 2mm, and the common thickness is 1.5mm, so as to mainly achieve the heat conduction and heat dissipation effects. For another example, the circuit substrate may be made of other metal materials with good thermal conductivity, for example, a rectangular plate made of copper. The shape of the circuit board 310 in the present invention is not limited to a rectangular shape, and may be a circular shape, a trapezoidal shape, or the like.
The insulating layer may be used to prevent the circuit layer from conducting electricity with the circuit substrate 310. The insulating layer is disposed on the surface of the circuit substrate 310, and the thickness of the insulating layer is thinner than that of the circuit substrate, generally 50um to 150um, and usually 110 um. The circuit layer is arranged on the insulating layer, so that the circuit layer is insulated from the circuit substrate, and the circuit layer is provided with internal circuits such as a driving chip, a bridge arm module, a fan switch module and the like. The driving chip 100, the bridge arm module and the fan switch module are electrically connected through metal wires.
The pins 320 may be used to transmit signals to corresponding internal circuits on the circuit layer, and may also be used to transmit signals output by corresponding internal circuits on the circuit layer to an external module. The plurality of pins 320 may be divided into a plurality of low voltage pins and a plurality of high voltage pins according to the voltage level of the transmission signal. The low-voltage pins refer to pin terminals for transmitting low-voltage logic control signals, the low-voltage pins are arranged at least one side edge of the circuit substrate, and the low-voltage pins are electrically connected with the circuit layer on the circuit substrate 310; a plurality of low voltage pins are soldered to pads of the circuit layer on the circuit substrate 310 by soldering, such as solder paste soldering, to electrically connect with the circuit layer on the circuit substrate 310. The high-voltage pins refer to pin terminals for transmitting high-voltage power output signals, the plurality of high-voltage pins are arranged at least one side edge of the circuit substrate 310, and the high-voltage pins are electrically connected with a circuit layer on the circuit substrate 310; the high voltage pins are soldered to pads of the circuit layer on the circuit substrate 310 by soldering, such as solder paste soldering, so as to electrically connect with the circuit layer on the circuit substrate 310.
The lead 320 can be made of C194(-1/2H) plates (chemical components: Cu (97.0), Fe (2.4), P (0.03) and Zn (0.12)) or KFC (-1/2H) plates (chemical components: Cu (99.6), Fe (0.1-0.05) and P (0.03, 0.025-0.04)), the C194 or KFC plates with the thickness of 0.5mm are processed by a stamping or etching process, nickel plating thickness is 0.1-0.5um firstly, and tin plating thickness is 2-5um secondly; the excess connecting ribs of the pins 320 are cut off and shaped into the desired shape by special equipment.
It should be noted that, after the pins 320 penetrate out of the first side surface of the sealing body 330, the pins are bent by a bending process to obtain first bent ends, and then the tail ends of the first bent ends are bent to obtain second bent ends. Wherein the first bending end may be parallel to the circuit substrate 330.
The bridge arm module can comprise a high-voltage side bridge arm (namely an upper bridge arm module) and/or a low-voltage side bridge arm (namely a lower bridge arm module), and can comprise an IGBT (insulated gate bipolar transistor) and a fast recovery diode, wherein the IGBT and the fast recovery diode are respectively adhered to a circuit substrate by silver paste or soldering tin; the IGBT and the fast recovery diode are respectively connected on the circuit layer by adopting bonding wires of gold, copper or aluminum and the like. In one example, the fast recovery diode is a high voltage fast recovery diode. The fan switch module can comprise a power MOS tube and a fast recovery diode; the power MOS tube and the fast recovery diode are respectively adhered to the circuit substrate by silver paste or soldering tin; the power MOS tube and the fast recovery diode are respectively connected to the circuit layer by bonding wires of gold, copper or aluminum and the like. The driving chip is adhered to the circuit substrate by silver paste or solder, the driving chip 100 may be connected to the circuit layer by gold, copper, or aluminum bonding wires, and the driving chip may be connected to the power MOS transistor and the IGBT by gold, copper, or aluminum bonding wires, respectively.
The sealing body 330 can be used for plastic-sealing a circuit substrate electrically connected with a plurality of pins 320 and circuit layers, so that the circuit substrate 310 and the circuit layers connected with the pins 320, the bridge arm modules and the fan switch modules are wrapped in the sealing body 330, and the functions of protecting internal circuits, insulating and resisting pressure are achieved. In the preparation process of the sealing body 330, the circuit substrate 310 electrically connected with the plurality of pins 320, the bridge arm module and the fan switch module can be plastically packaged in the sealing body 330 by a plastic package mold through a plastic package process. The material of the sealing body 330 may be thermosetting polymer, such as epoxy resin, phenolic resin, silica gel, amino group, unsaturated resin; in order to improve the heat dissipation capability, the sealing body may be a composite material containing powder or fibers of metal, ceramic, silicon oxide, graphene, and the like. In one example, the material used for the sealing body 330 may be a molding compound prepared by mixing epoxy resin as a matrix resin, high-performance phenolic resin as a curing agent, silica powder and the like as fillers, and various additives.
The plastic package molds with different shapes can be designed according to different design requirements, and then the sealing bodies 330 with different shapes and structures can be obtained through plastic package. For example, the sealing body 330 may be a rectangular parallelepiped structure. The circuit board 310 and the circuit layer to which the respective pins 320, the bridge arm module, and the fan switch module are connected are wrapped by an injection molding method using a thermoplastic resin or a transfer molding method using a thermosetting resin to protect them.
In one example, the circuit layer further includes a PFC switch module coupled to the driving chip. The PFC switch module may include a power IGBT, a schottky diode, and a fast recovery diode. The IGBT, the Schottky diode and the fast recovery diode are respectively adhered to the circuit substrate by silver paste or soldering tin; the IGBT, the Schottky diode and the fast recovery diode are respectively connected to the circuit layer by bonding wires of gold, copper or aluminum and the like.
In one example, the circuit layer includes a circuit wiring layer (not shown), and circuit elements arranged on the circuit wiring layer; the circuit wiring layer is provided on the insulating layer. The circuit elements comprise circuit elements (such as an IGBT and a fast recovery diode) corresponding to the bridge arm module, circuit elements (such as a power MOS tube, a Schottky diode and a fast recovery diode) corresponding to the fan switch module, circuit elements (such as an IGBT, a Schottky diode and a fast recovery diode) corresponding to the PFC switch module and circuit elements (such as a diode, a transistor, a resistor, a capacitor and the like) corresponding to the driving chip.
Wherein, circuit wiring layer comprises and constitutes the circuit line by etched copper foil by metal such as copper and circuit substrate insulation, circuit wiring layer, and the circuit layer thickness is also thinner, for example about 70 um. In one example, the circuit wiring layer further includes pads disposed adjacent to the side edge of the circuit substrate, which may be formed using 2 ounce copper foil. And finally, a thin green oil layer can be coated on the circuit wiring layer to play a role in circuit isolation and to separate the circuit lines from the circuit lines. The circuit elements are arranged on the circuit wiring layer, and the circuit elements or the circuit elements and the circuit wiring layer can be electrically connected through metal wires; the circuit element may be fixed to the circuit wiring layer by soldering.
In one example, an insulating layer is formed overlying at least one surface of the circuit substrate. And the resin material such as epoxy resin and the like forming the sealing layer can be filled with fillers such as alumina, silicon aluminum carbide and the like at high concentration to improve the heat conductivity, the fillers can be angular in order to improve the heat conductivity, and the fillers can be spherical in order to avoid the risk that the fillers damage the surface of the circuit element. The pins are generally made of metals such as copper, a nickel-tin alloy layer is formed on the surface of the copper through chemical plating and electroplating, the thickness of the alloy layer is generally 5 mu m, and the copper can be protected from corrosion and oxidation by the plating layer and the weldability can be improved.
In one example, the circuit layer comprises a driving chip, a PFC switch module, a bridge arm module and a fan switch module, the driving chip, the PFC switch module, the bridge arm module and the fan switch module are respectively attached to corresponding component mounting positions of the circuit layer by brushing tin paste or dispensing silver paste, and the driving chip, the PFC switch module, the bridge arm module and the fan switch module are respectively attached to corresponding component mounting positions of the circuit layer by an automatic SMT (surface mount technology) device; then, the whole semi-finished product is processed by a reflow oven to weld all components to corresponding mounting positions, and the welding quality of the components is detected by visual inspection of AOI equipment; the cleaning method comprises the steps of cleaning foreign matters such as scaling powder and aluminum scraps remained on a circuit substrate in a spraying and ultrasonic cleaning mode, enabling a driving chip, a PFC switch module, a bridge arm module, a fan switch module and circuit wiring to be connected through bonding wires, achieving installation of the driving chip, the PFC switch module, the bridge arm module and the fan switch module, and further achieving MIPS integration of the driving chip, the PFC switch module, the bridge arm module and the fan switch module.
In the above embodiment, based on the characteristics of the MIPS of the present application, such as high integration degree, strong flexibility of wiring, good heat dissipation, and small product size, the functions of bridge arm driving, PFC IGBT driving, enabling, under-voltage, over-current, over-voltage, over-temperature, error reporting, and the like are realized, and the function of self-cooling fan driving is realized at the same time, so that two chips can be integrated, a three-phase inverter power element, a PFC power element, and a fan power element can be integrated together, and a peripheral circuit is very simple. As long as the external fan (such as 12V direct current fan) that connects, just can be according to MIPS self temperature condition, and start the fan and give self heat dissipation. The application electric control circuit is simple and convenient to realize, the problem of MIPS heat dissipation is better solved, the electric control reliability is improved, and the MIPS application life is prolonged.
In one particular example, as shown in fig. 3, the high side bridge arms can include an a bridge upper arm IGBT2, a B bridge upper arm IGBT4, a C bridge upper arm IGBT 6; the low-voltage side bridge arm can comprise an A bridge lower bridge arm IGBT3, a B bridge lower bridge arm IGBT5 and a C bridge lower arm IGBT 7; the high-voltage side bridge arm further comprises a fast recovery diode D3, a fast recovery diode D4 and a fast recovery diode D5; the low side leg also includes a fast recovery diode D6, a fast recovery diode D7, and a fast recovery diode D8. The PFC switching module may include an IGBT1, a fast recovery diode D2, and a schottky diode D1. The fan switch module may include a MOS transistor and a fast recovery diode D9. The PFC driving output end group of the driving chip HVIC comprises a PFCOUT end, the high-voltage side driving output end group comprises an HO1 end, an HO2 end and an HO3 end, and the low-voltage side driving output end group comprises an LO1 end, an LO2 end and an LO3 end. The output end of the fan driving circuit is a FANOUT end. The high-voltage side driving input end group comprises a HIN1 end, a HIN2 end and a HIN3 end; the low-voltage side drive input terminal group comprises a LIN1 terminal, a LIN2 terminal and a LIN3 terminal; the PFC driving input terminal group comprises a PFCIN terminal. The driving chip further comprises a driving chip power supply VDD, a driving chip power supply low VSS, an enabling end (FLY \ EN), a PFC part overcurrent protection voltage sampling end PFCTRIP and an inversion part overcurrent protection voltage sampling end ITRIP.
The PFCOUT end, the HO1 end, the HO2 end, the HO3 end, the LO1 end, the LO2 end and the LO3 end of the driver chip HVIC are respectively connected with the G ends of the IGBTs 4, TGBT 4, IGBT4 and IGBT3 through resistors R1, R2, R3, R4, IGBT4, TGBT 4, IGBT4, and the C ends of the IGBT 752 are respectively connected with the CN ports of D4, and the E ends of the IGBT4, BT4, IGBT 36752, D4, IGBT. The VB1 terminal, the VS1 terminal, the VB2 terminal, the VS2 terminal, the VB3 terminal and the VS3 terminal of the driving chip HVIC are respectively connected with bootstrap capacitors (C1, C2 and C3). The FANOUT end of the driving chip HVIC is connected with the G end of the MOS tube through a resistor R8, the C end of the MOS tube is connected with the CN end of a fast recovery diode D9, the FAN end of a FAN (direct current FAN) serving as MIPS is led out, and the D end of the MOS tube is connected with the AN end of a fast recovery diode D9 and connected to the VSS end. The terminal of the MIPS is respectively led out from a VDD terminal, a HIN1 terminal, a HIN2 terminal, a HIN3 terminal, a LIN1 terminal, a LIN2 terminal, a LIN3 terminal, a PFCIN terminal, a FLY \ EN terminal, a PFCTRIP terminal, an ITRIP terminal and a VSS terminal.
The C end of the IGBT1 is connected with the AN end of a fast recovery diode D2, a PFC port serving as AN MIPS is led out, and a VCC1 port serving as the MIPS is led out from the CN end of a fast recovery diode D2; the C end of the IGBT1 is led out to be used as a-VCC port of the MIPS. The C ends of the upper arm IGBT2, the upper arm IGBT4 and the upper arm IGBT6 are led out to be used as a VCC2 port of MIPS; e ports of the lower arm IGBT3, the lower arm IGBT5 and the lower arm IGBT7 are led out to be used as-U ports, -V ports and-W ports of the MIPS respectively. A U port of the MIPS is led out from the connection point of the upper bridge arm IGBT2 of the A bridge and the lower bridge arm IGBT3 of the A bridge; a V port serving as an MIPS is led out from a connection point of the upper bridge arm IGBT4 of the B bridge and the lower bridge arm IGBT5 of the B bridge; and a W port of the MIPS is led out from the connection point of the upper arm IGBT6 of the C bridge and the lower arm IGBT7 of the C bridge.
In the above embodiment, the driver chip HVIC includes an upper bridge driver, a lower bridge driver, a PFC IGBT driver, a fan MOS transistor driver, functional circuits such as enable, under-voltage, over-current, over-voltage, over-temperature, and error reporting circuits, and a bootstrap circuit. The driving chip HVIC, the IGBT, the MOS tube, the fast recovery diode, the bootstrap capacitor and the sampling resistor form an MIPS circuit, the three-phase inversion, the PFC power factor adjustment and the MIPS complete functions of the cooling fan control are realized, and the MOS tube and the driving circuit thereof do not need to be controlled by an additional cooling fan. The driving chip HVIC comprises a fan (such as a 12V direct current fan) driving circuit, a duty ratio adjustable oscillator, a temperature detection circuit and a control logic circuit. The MOS tube is integrated outside the driving chip HVIC and inside the MIPS, so that the radiating fan can be started according to the temperature of the MIPS as long as an external fan (such as a 12V direct current fan) is connected, and radiating is conducted on the MIPS. According to the detected MIPS temperature of the MIPS temperature detection circuit, the MOS duty ratio is controlled, and the higher the temperature is, the larger the MOS duty ratio is. The logic circuit also comprises the functions of temperature protection, soft start, automatic restart, protection mode selection and the like. A circuit substrate is adopted to assemble chips such as a driving chip HVIC, an IGBT, a fast recovery diode, an MOS and a diode combination and a lead frame, a complete MIPS circuit is formed through bonding wire connection, and the chips are packaged together through epoxy plastic package materials to form physical protection, so that MIPS is obtained.
The present invention also discloses a preparation method of the MIPS according to the above, as shown in fig. 5, the preparation method includes the steps of:
step S100, a circuit substrate is provided.
Step S200, preparing an insulating layer on the circuit substrate.
Step S300, preparing a circuit layer on the insulating layer; the circuit layer comprises a bridge arm module, a fan switch module and any one of the driving chips; the bridge arm module and the fan switch module are respectively connected with the driving chip through bonding wires.
In step S400, a plurality of pins are disposed on the circuit layer, and first ends of the plurality of pins are connected to the circuit layer through metal wires, respectively.
Step S500, performing injection molding on the circuit substrate provided with the circuit layer and the plurality of pins through a packaging mold to form a sealing body, and respectively leading out the second ends of the pins from the first side surface of the sealing body to form the MIPS.
Specifically, the specific preparation process of the MIPS is as follows: designing a circuit substrate with a proper size according to a required circuit layout; putting the prepared circuit substrate into a special carrier (the carrier can be made of materials with high temperature resistance of more than 200 ℃ such as aluminum, synthetic stone, ceramics, PPS and the like), preparing an insulating layer on the circuit substrate, then laminating a copper foil on the surface of the insulating layer, etching the copper foil, and locally taking out the copper foil to form a circuit wiring layer; respectively adhering electronic elements (IGBT, power MOS tube, fast recovery diode and the like) corresponding to the bridge arm module, the fan switch module and the driving chip to the component mounting positions through solder paste brushing or silver paste dispensing at the component mounting positions reserved in the circuit layer, adhering resistance and capacitance pieces to the component mounting positions through automatic SMT (surface mount technology) equipment, placing pins to the corresponding mounting positions through a manipulator or manually, and fixing the pins through a carrier; and then, the whole semi-finished product including the carrier is processed through a reflow oven together to weld all the components to the corresponding mounting positions, the welding quality of the components is detected through visual inspection AOI equipment, foreign matters such as soldering flux, aluminum scraps and the like remained on the metal aluminum substrate are removed through cleaning modes such as spraying, ultrasonic and the like, and circuit elements such as a driving chip, an IGBT, a power MOS tube, a fast recovery diode and the like are connected with circuit wiring through a bonding wire, so that a circuit layer is formed on the circuit substrate.
All the pins (such as the low-voltage pins and the high-voltage pins) are made of a metal base material such as a copper base material, for example, the pins are made into a strip shape with the length C of 25mm, the width K of 1.5mm and the thickness H of 1mm, for convenience of assembly, one end of each pin can be pressed and shaped into a certain radian, and then a nickel layer is formed on the surface of each pin by an electroless plating method: the nickel layer is formed on the surface of the copper material with a special shape by the mixed solution of nickel salt and sodium hypophosphite and adding a proper complexing agent, the metal nickel has strong passivation capability, a layer of extremely thin passivation film can be rapidly generated, and the corrosion of atmosphere, alkali and certain acid can be resisted. The nickel plating crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 mu m; then, by an acid sulfate process, the copper material with the formed shape and the nickel layer is soaked in a plating solution with positive tin ions for electrifying at room temperature, a nickel-tin alloy layer is formed on the surface of the nickel layer, the thickness of the nickel layer is generally controlled to be 5 mu m, and the protection and the weldability are greatly improved by the formation of the nickel layer. Thereby completing the pin preparation. And then, the first end of each pin is prepared on the circuit layer through reflow soldering, and solidification of tin paste or silver paste.
The method comprises the following steps that a preset designed plastic package mold is adopted, in the preparation process, a circuit substrate electrically connected with a plurality of pins, a bridge arm module, a fan switch module and a driving chip can be plastically packaged in the plastic package mold through a plastic package material by adopting the plastic package mold through a plastic package process; and finally, demolding, wherein after demolding, the plastic package material forms a sealing body, and the circuit substrate electrically connected with the plurality of pins, the bridge arm module, the fan switch module and the driving chip is plastically packaged in the sealing body, so that only the pins are exposed.
Finally, forming a semi-finished packaging product through the processes of marking, PMC post-curing, rib cutting and forming and the like; and (4) carrying out electrical performance test on the product through an electrical parameter tester, and further forming the MIPS.
In the above embodiment, based on the MIPS preparation of the present application, the functions of bridge arm driving, PFC IGBT driving, enabling, under-voltage, over-current, over-voltage, over-temperature, error reporting, and the like are realized, and the function of self cooling fan driving is realized at the same time, so that two chips can be integrated, a three-phase inverter power element, a PFC power element, and a fan power element can be integrated together, and a peripheral circuit is very simple. As long as the external fan (such as 12V direct current fan) that connects, just can be according to MIPS self temperature condition, and start the fan and give self heat dissipation. The application electric control circuit is simple and convenient to realize, the problem of MIPS heat dissipation is better solved, the electric control reliability is improved, and the MIPS application life is prolonged.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (10)

1. A driver chip, comprising:
the bridge arm driving circuit comprises a driving bridge arm input end group and a bridge arm driving output end group, and is configured to output bridge arm driving output signals to a bridge arm module through the bridge arm driving output end group according to bridge arm control input signals received by the bridge arm driving input end group;
the temperature detection circuit is used for detecting the current temperature;
the input end of the fan driving circuit is coupled with the temperature detection circuit, the output end of the fan driving circuit is coupled with the fan switch module, and the fan driving circuit is configured to control the on-off of the fan switch module according to the current temperature detected by the temperature detection circuit so that the fan switch module controls the starting or stopping of the fan.
2. The driving chip according to claim 1, further comprising a fan driving logic circuit connected between the temperature detection circuit and the fan driving circuit, wherein the fan driving logic circuit is configured to control the fan driving circuit to operate according to the current temperature, so that the fan driving circuit controls the fan switch module to be turned on or off.
3. The driver chip of claim 2, further comprising a PFC driver circuit, wherein the PFC driver circuit comprises a PFC driver input terminal set and a PFC driver output terminal set, and the PFC driver circuit is configured to output a PFC driver output signal to the PFC switch module through the PFC driver output terminal set according to a PFC control input signal received by the PFC driver input terminal set.
4. The driving chip of claim 3, wherein the bridge arm driving circuit comprises a high-voltage side driving circuit and a low-voltage side driving circuit; the bridge arm module comprises a high-voltage side bridge arm and a low-voltage side bridge arm;
the high-voltage side driving circuit comprises a high-voltage side driving input end group and a high-voltage side driving output end group, and is configured to output a high-voltage side driving output signal to the high-voltage side bridge arm through the high-voltage side driving output end group according to a high-voltage side control input signal received by the high-voltage side driving input end group; the low-voltage side driving circuit comprises a low-voltage side driving input end group and a low-voltage side driving output end group, and is configured to output a low-voltage side driving output signal to the low-voltage side bridge arm through the low-voltage side driving output end group according to a low-voltage side control input signal received by the low-voltage side driving input end group.
5. The driver chip according to claim 4, wherein the high-side driver circuit includes a high-side power input terminal set, a bootstrap circuit, and a high-side under-voltage protection circuit coupled to the bootstrap circuit, and the bootstrap circuit is coupled to the high-side power input terminal set; the bootstrap circuit is configured to bootstrap and supply power to the high-voltage side drive circuit according to the power supply signal input by the high-voltage side power supply input terminal group; the high-voltage side under-voltage protection circuit is configured to perform under-voltage on-off control on the high-voltage side drive circuit according to the output signal of the bootstrap circuit.
6. The driving chip of claim 5, further comprising a power circuit and an under-voltage power protection circuit coupled to the power circuit; the power circuit is coupled with the high-voltage side driving circuit, the low-voltage side driving circuit and the PFC driving circuit respectively.
7. The driving chip of claim 6, further comprising an over-current protection circuit, an over-voltage protection circuit and an over-temperature protection circuit;
the first end of the over-current protection circuit is coupled with the power supply circuit, and the second end of the over-current protection circuit is respectively coupled with the high-voltage side driving circuit, the low-voltage side driving circuit and the PFC driving circuit; the first end of the overvoltage protection circuit is coupled with the power supply circuit, and the second end of the overvoltage protection circuit is respectively coupled with the high-voltage side drive circuit, the low-voltage side drive circuit and the PFC drive circuit; the first end of the over-temperature protection circuit is coupled with the temperature detection circuit, and the second end of the over-temperature protection circuit is respectively coupled with the high-voltage side drive circuit, the low-voltage side drive circuit and the PFC drive circuit.
8. The driver chip of claim 7, further comprising an interlock and dead-band circuit, an enable circuit, and an error reporting circuit;
the interlock and dead zone circuit is coupled between the high-voltage side drive circuit and the low-voltage side drive circuit; the enabling circuit is respectively coupled with the high-voltage side driving circuit, the low-voltage side driving circuit and the PFC driving circuit; the error reporting circuit is respectively coupled with the overcurrent protection circuit, the overvoltage protection circuit, the over-temperature protection circuit and the power supply under-voltage protection circuit.
9. A semiconductor circuit, comprising:
the circuit board is provided with an insulating layer;
a circuit layer disposed on the insulating layer;
the first ends of the pins are respectively and electrically connected with the circuit layer;
the sealing body wraps the circuit substrate and the circuit layer connected with the pins;
the second end of each pin is led out from the first side face of the sealing body; the circuit layer comprises a bridge arm module, a fan switch module and the driving chip of any one of claims 1 to 8; the bridge arm module and the fan switch module are respectively coupled with the driving chip.
10. A method for manufacturing a semiconductor circuit according to claim 9, comprising the steps of:
providing a circuit substrate;
preparing an insulating layer on the circuit substrate;
preparing a circuit layer on the insulating layer; the circuit layer comprises a bridge arm module, a fan switch module and the driving chip of any one of claims 1 to 8; the bridge arm module and the fan switch module are respectively connected with the driving chip through bonding wires;
a plurality of pins are arranged on the circuit layer, and first ends of the pins are respectively connected with the circuit layer through metal wires;
and performing injection molding on the circuit substrate provided with the circuit layer and the plurality of pins through a packaging mold to form a sealing body, and respectively leading out the second ends of the pins from the first side surface of the sealing body to form the semiconductor circuit.
CN202110460221.7A 2021-04-27 2021-04-27 Driving chip, semiconductor circuit and preparation method thereof Pending CN113130471A (en)

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Application Number Priority Date Filing Date Title
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113823609A (en) * 2021-09-18 2021-12-21 广东汇芯半导体有限公司 Semiconductor circuit, control board, and temperature control method for semiconductor circuit
CN114094539A (en) * 2021-10-25 2022-02-25 广东汇芯半导体有限公司 Semiconductor circuit having a plurality of transistors
CN114123830A (en) * 2021-10-29 2022-03-01 广东汇芯半导体有限公司 Semiconductor circuit having a plurality of transistors
CN114640088A (en) * 2022-04-01 2022-06-17 广东汇芯半导体有限公司 High-voltage integrated circuits and semiconductor circuit modules

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113823609A (en) * 2021-09-18 2021-12-21 广东汇芯半导体有限公司 Semiconductor circuit, control board, and temperature control method for semiconductor circuit
CN114094539A (en) * 2021-10-25 2022-02-25 广东汇芯半导体有限公司 Semiconductor circuit having a plurality of transistors
CN114094539B (en) * 2021-10-25 2023-07-25 广东汇芯半导体有限公司 Semiconductor circuit with a high-voltage power supply
CN114123830A (en) * 2021-10-29 2022-03-01 广东汇芯半导体有限公司 Semiconductor circuit having a plurality of transistors
CN114640088A (en) * 2022-04-01 2022-06-17 广东汇芯半导体有限公司 High-voltage integrated circuits and semiconductor circuit modules

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