CN113130368B - Air-float chuck and wafer geometric parameter measuring device - Google Patents
Air-float chuck and wafer geometric parameter measuring device Download PDFInfo
- Publication number
- CN113130368B CN113130368B CN202110396624.XA CN202110396624A CN113130368B CN 113130368 B CN113130368 B CN 113130368B CN 202110396624 A CN202110396624 A CN 202110396624A CN 113130368 B CN113130368 B CN 113130368B
- Authority
- CN
- China
- Prior art keywords
- porous
- gas
- porous layer
- wafer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011148 porous material Substances 0.000 claims abstract description 25
- 238000005259 measurement Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 91
- 239000003570 air Substances 0.000 description 85
- 235000012431 wafers Nutrition 0.000 description 65
- 239000000463 material Substances 0.000 description 9
- 229920000049 Carbon (fiber) Polymers 0.000 description 6
- 239000004917 carbon fiber Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- -1 etc. Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000002121 nanofiber Substances 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 229920002522 Wood fibre Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000013317 conjugated microporous polymer Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013335 mesoporous material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012229 microporous material Substances 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000002025 wood fiber Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application provides an air floating chuck and a wafer geometric parameter measuring device. The air-float chuck comprises a first porous layer composed of a porous material; and the air inlet layer is stacked with the first porous layer and connected with a first gas supply part for supplying the first gas, and is used for transmitting the first gas to the first porous layer so as to suspend the wafer by using the supporting force provided by the first gas. The embodiment of the application can provide uniform air floatation conditions by utilizing the air floatation chuck, and avoid the problem that the wafer is difficult to stably suspend above the chuck due to unstable air flow or structural design defects of the chuck and the like.
Description
Technical Field
The application relates to the technical field of wafer manufacturing, in particular to an air floating chuck and a wafer geometric parameter measuring device.
Background
During the preparation or measurement of wafers, the wafer is typically held above the chuck by clamping. However, the method for fixing the wafer has certain defects, such as a large clamping force, which easily changes the original shape of the wafer, and in addition, because the cleanliness of the clamping tool is difficult to ensure, chip particles or other pollutants are easily generated on the wafer, so that a large measurement error is caused to the geometric parameters of the wafer.
Disclosure of Invention
In view of the above, embodiments of the present application are directed to an air-floating chuck and a wafer geometry measuring device, so as to solve the problem of wafer measurement errors.
A first aspect of the present application provides an air chuck comprising a first porous layer composed of a porous material; and the air inlet layer is stacked with the first porous layer and connected with a first gas supply part for supplying the first gas, and is used for transmitting the first gas to the first porous layer so as to suspend the wafer by using the supporting force provided by the first gas.
In one embodiment of the application, the porous material comprises one or more of porous carbon, porous polymer, porous carbon fiber, porous ceramic, porous steel, gas permeable steel, porous metal, and gas permeable metal.
In an embodiment of the present application, the gas inlet layer is connected to a second gas supply part for supplying a second gas, and is further used for delivering the second gas through the first porous layer to adjust the shape of the first surface of the wafer by using the suction force provided by the second gas, wherein the first surface is a surface of the wafer close to the first porous layer.
In an embodiment of the application, the first porous layer comprises a plurality of first regions for passing the first gas and communicating with the first gas supply means and a plurality of second regions for passing the second gas and communicating with the second gas supply means.
In an embodiment of the application, the plurality of first regions and the plurality of second regions are alternately arranged.
In an embodiment of the present application, the middle part of the air intake layer is a hollow structure, and an opening of the hollow structure contacts with a surface of the first porous layer, which is close to the air intake layer, and the first gas supplied by the first gas supply part enters the hollow structure and is then transferred to the first porous layer.
In an embodiment of the application, the air floating chuck further comprises a reference component sleeved on the outer side of the first porous layer to calibrate the surface of the first porous layer away from the air inlet layer by using the surface of the reference component away from the air inlet layer as a reference plane, wherein the orthographic projection of the wafer on the first porous layer is covered by the first porous layer.
In an embodiment of the application, the surface of the reference element remote from the gas inlet layer has the same or different reflectivity than the surface of the first porous layer remote from the gas inlet layer.
In one embodiment of the present application, the air chuck further comprises: and the second porous layer is positioned above the surface of the first porous layer, which is far away from the air inlet layer, and the hardness of the second porous layer is higher than that of the first porous layer.
A second aspect of the application provides a wafer geometry measuring device comprising any one of the air chucks as provided in the first aspect of the application; and the interferometer is used for acquiring an interference fringe image of a second surface of the wafer, so that shape measurement and/or flatness measurement can be performed on the wafer based on the interference fringe image, and the second surface is a surface of the wafer away from the air-float chuck.
According to the technical scheme provided by the embodiment of the application, the air floating chuck comprises the first porous layer made of porous materials and the air inlet layer stacked with the first porous layer, so that uniform air floating conditions are provided by the air floating chuck, the problem of wafer measurement errors is solved, and meanwhile, the problem that the wafer is difficult to stably suspend above the chuck due to unstable air flow or structural design defects of the chuck is avoided.
Drawings
Fig. 1 shows a schematic cross-sectional view of an air chuck according to an embodiment of the present application.
Fig. 2A and 2B are schematic cross-sectional views of an air chuck according to another embodiment of the present application.
Fig. 2C illustrates a schematic top view of an air chuck according to an embodiment of the application.
Fig. 2D is a schematic top view of an air chuck according to another embodiment of the application.
Fig. 3 shows a schematic cross-sectional view of an air chuck according to yet another embodiment of the present application.
Fig. 4 is a schematic structural diagram of a wafer geometry measuring apparatus according to an embodiment of the application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In order to avoid large errors in the measurement of the wafer geometry, the wafer may be suspended by a chuck. However, it is difficult to stably suspend the wafer above the chuck due to unstable air flow or structural design defects of the chuck, etc.
Fig. 1 shows a schematic cross-sectional view of an air chuck according to an embodiment of the present application. As shown in fig. 1, the air chuck 100 includes a first porous layer 110 composed of a porous material; the gas inlet layer 120 is stacked with the first porous layer 110 and connected with the first gas supply part 10 supplying the first gas 1, for transferring the first gas 1 to the first porous layer 110 to suspend the wafer 130 using the supporting force provided by the first gas 1.
It should be understood that the porous material may be a material commonly existing in nature, such as wood, sponge, and organic silica, or may be an artificially synthesized material, such as a porous polymer; the porous material can be metal material such as foam nickel, foam aluminum, gas-permeable steel, etc., inorganic material such as porous carbon, porous ceramic, porous silicon carbide, porous carbon fiber, rock wool, glass wool, etc., or organic material such as cotton, wool, hemp, wood fiber, etc.; the porous material may be a microporous material with a pore diameter of less than 2nm, a mesoporous material with a pore diameter of between 2nm and 50nm, or a macroporous material with a pore diameter of more than 50nm, as long as the porous material is a material with a network structure composed of mutually communicated or closed pores, and the porous material is not particularly limited.
The first gas 1 may be air, nitrogen or argon, etc., as long as the wafer 130 is suspended by a supporting force provided thereto, which is not particularly limited in the present application. The first gas supply member 10 may be a part of the air chuck, or may be independent of the air chuck, as long as it can be connected to the gas inlet layer 120 and supply the first gas 1 to the gas inlet layer 120, which is not particularly limited in the present application.
The microstructure of the first porous layer 110 may be a regular or irregular structure such as honeycomb, mesh, etc., which is not particularly limited in the present application. The width W1 of the first porous layer 110 may be equal to the width W2 of the air intake layer 120, or may be smaller than the width W2 of the air intake layer 120, which is not particularly limited in the present application. In some embodiments, the width W1 of the first porous layer 110 is equal to or greater than the width of the wafer 130, thereby ensuring that the surface of the wafer 130 adjacent to the air chuck 100 is uniformly supported by the uniformly distributed support force generated by the first gas 1.
According to the technical scheme provided by the embodiment of the application, the air floating chuck comprises the first porous layer made of the porous material and the air inlet layer stacked with the first porous layer, so that the first gas transmitted by the air inlet layer is uniformly dispersed by utilizing the porous microstructure of the porous material, and further uniform air floating conditions are generated. In addition, the first porous layers are made of porous materials, so that the whole surface of the wafer, which is close to the air floating chuck, is subjected to uniformly distributed supporting force generated by the first gas, the wafer can be stably suspended above the air floating chuck, and the original shape of the wafer can be effectively maintained.
In one embodiment of the application, the porous material comprises one or more of porous carbon, porous polymer, porous carbon fiber, porous ceramic, porous steel, gas permeable steel, porous metal, and gas permeable metal.
It should be understood that porous materials include, but are not limited to, one or more of porous carbon, porous polymers, porous carbon fibers, porous ceramics, porous steel, gas permeable steel, porous metal, and gas permeable metal, as long as they are materials capable of producing porous microstructures, as the application is not specifically limited thereto. The porous carbon can be activated carbon, activated carbon fiber, carbon molecular sieve or carbon nanotube and other materials; the porous polymer can be super cross-linked polymer, self-contained microporous polymer, conjugated microporous polymer and other materials; the porous carbon fiber can be porous silicon carbide nanofiber, porous molybdenum carbide nanofiber and other materials, and the application is not limited in particular.
Fig. 2A and 2B are schematic cross-sectional views of an air chuck according to another embodiment of the present application. The embodiment shown in fig. 2A and 2B is a modification of the embodiment shown in fig. 1. As shown in fig. 2A or fig. 2B, the difference from the embodiment shown in fig. 1 is that the gas inlet layer 120 is connected to the second gas supply part 20 for supplying the second gas 2, and the gas inlet layer 120 is further used for delivering the second gas 2 through the first porous layer 110 to adjust the shape of the first surface S 1 of the wafer 130 by using the suction force provided by the second gas 2, where the first surface S 1 is the surface of the wafer 130 close to the first porous layer 110.
It should be understood that the transmission channels of the first gas 1 and the second gas 2 in the first porous layer 110 may be the same (refer to fig. 2A) or different (refer to fig. 2B), which is not particularly limited in the present application. Specifically, in some embodiments, as in fig. 2A, in the air chuck 200A, it is necessary to close the first gas supply part 10 to stop the transfer of the first gas 1 when the second gas 2 is transferred; in other embodiments, as shown in fig. 2B, in the air chuck 200B, when the second gas 2 is transferred, the first gas supply part 10 is not required to be turned off to stop the transfer of the first gas 1, the first gas supply part 10 and the second gas supply part 20 may be turned on simultaneously to transfer the first gas 1 and the second gas 2 according to actual needs, and only the first gas supply part 10 or the second gas supply part 20 may be turned on, which is not limited in this disclosure.
According to the technical scheme provided by the embodiment of the application, the air inlet layer is connected with the second gas supply part for supplying the second gas, so that the shape of the first surface of the wafer is adjusted by utilizing the suction force provided by the second gas, and the wafer can be adsorbed to the top surface of the air-float chuck by utilizing the suction force provided by the second gas.
In an embodiment of the present application, as shown in fig. 2B, the first porous layer 110 includes a plurality of first regions 1a for passing the first gas 1 and communicating with the first gas supply part 10, and a plurality of second regions 2a for passing the second gas 2 and communicating with the second gas supply part 20.
It should be understood that the area or shape of each first region 1a of the plurality of first regions 1a may be the same or different; the area or shape of each second region 2a of the plurality of second regions 2a may be the same or different; the area of each first region 1a of the plurality of first regions 1a may be the same as or different from the area of each second region 2a of the plurality of second regions 2 a; the number of the plurality of first regions 1a and the plurality of second regions 2a may be the same or different; the porous materials used in the plurality of first regions 1a and the plurality of second regions 2a may be the same or different; each first region 1a of the plurality of first regions 1a may be adjacent to one or more second regions 2a, and each second region 2a of the plurality of second regions 2a may also be adjacent to one or more first regions 1a; the present application is not particularly limited thereto. A single first region 1a may be adjacent to one or more second regions 2a, and a single second region 1a may also be adjacent to one or more first regions 1a, which is not particularly limited in the present application. Any blocking member may be used to block any two adjacent regions between the plurality of first regions 1a and the plurality of second regions 2a, so long as any two adjacent regions between the plurality of first regions 1a and the plurality of second regions 2a can be separated from each other, which is not particularly limited in the present application.
In the embodiment of the application, the first porous layer is divided into the plurality of first areas and the plurality of second areas, so that the transmission channels of the first gas and the second gas are separated, and the first gas and the second gas can be respectively transmitted or simultaneously transmitted into the first porous layer.
Fig. 2C illustrates a schematic top view of an air chuck according to an embodiment of the application. Fig. 2D is a schematic top view of an air chuck according to another embodiment of the application. The schematic cross-sectional view of the air chuck in the embodiment shown in fig. 2B is a schematic cross-sectional view of the air chuck in the embodiment shown in fig. 2C or fig. 2D taken along the plane formed by B-B'. The embodiment shown in fig. 2C and 2D is an example of the embodiment shown in fig. 2B. As shown in fig. 2C and 2D, the plurality of first regions 1a and the plurality of second regions 2a are alternately arranged.
It should be understood that the plurality of first regions 1a and the plurality of second regions 2a may be alternately arranged by dividing the first porous layer 110 into a plurality of regions in a form of a loop or a ring, etc., arranging the plurality of regions around each of the first regions 1a as the second regions 2a (refer to fig. 2C), dividing the first porous layer 110 into a plurality of regions in a form of a mesh or a honeycomb, etc., arranging the plurality of regions in a form of a single first region 1a and a single second region 2a as repeating units (refer to fig. 2D), or dividing the plurality of regions into a plurality of regions in other forms such as a plurality of lines passing through the center of the first porous layer 110, so long as the plurality of first regions 1a and the plurality of second regions 2a are alternately arranged, the present application is not limited thereto. The top surface of the air chuck may be circular (refer to fig. 2C), rectangular (refer to fig. 2D), regular or irregular, such as square, pentagon, hexagon, etc., which is not particularly limited in the present application.
In the embodiment of the application, the plurality of first areas and the plurality of second areas are alternately arranged, so that the transmission channels of the first gas and the second gas are distributed at intervals, the first gas and the second gas are uniformly distributed in the first porous layer, the first surface of the wafer is favorably subjected to uniformly distributed supporting force generated by the first gas and/or uniformly distributed suction force generated by the second gas, and the wafer is further favorably and stably suspended above the top surface of the air-float chuck and the original shape of the wafer is kept.
Fig. 3 shows a schematic cross-sectional view of an air chuck according to yet another embodiment of the present application. The embodiment shown in fig. 3 is a modification of the embodiment shown in fig. 1. As shown in fig. 3, the difference from the embodiment shown in fig. 1 is that in the air chuck 300, the middle part of the air inlet layer 120 is a hollow structure 120a, the opening of the hollow structure 120a is in contact with the surface of the first porous layer 110 near the air inlet layer 120, and the first gas 1 supplied from the first gas supply part 10 enters the hollow structure 120a and is transferred to the first porous layer 110.
In some embodiments, the hollow structure 120a may be a unitary hollow structure, and after the first gas 1 supplied from the first gas supply part 10 enters the hollow structure 120a, the hollow structure 120a may be used to store the first gas 1, and it should be understood that the hollow structure 120a may also store the second gas 2 when the first gas supply part 10 is closed and the second gas supply part 20 is opened, which is not particularly limited in the present application. In other embodiments, the hollow structure 120a may be a plurality of hollow structures formed by dividing the plurality of first regions and the plurality of second regions, and the hollow structure 120a may be used for transmitting the first gas 1 supplied from the first gas supply unit 10 into the hollow structure 120a and then into the first porous layer 110, and may be used for transmitting the second gas 2 supplied from the second gas supply unit 20 into the hollow structure 120a and then into the first porous layer 110, which is not particularly limited in the present application.
According to the technical scheme provided by the embodiment of the application, the middle part of the air inlet layer is provided with the hollow structure, and the opening of the hollow structure is contacted with the surface of the first porous layer close to the air inlet layer, so that the first gas is stored in the hollow structure before being transmitted to the first porous layer. The hollow structure has the functions of storing and buffering the first gas, so that the first gas can uniformly enter the first porous layer, the first gas dispersed by the first porous layer is more uniform, and the whole surface of the wafer, which is close to the air floating chuck, is subjected to the supporting force which is generated by the first gas and is more uniformly distributed.
In an embodiment of the present application, the air chuck 300 further includes a reference member 140 sleeved on the outer side of the first porous layer 110 to calibrate the surface of the first porous layer 110 away from the air inlet layer 120 (which may also be understood as a top surface of the air chuck) by using the surface of the reference member 140 away from the air inlet layer 120 as a reference plane, wherein the front projection of the wafer 130 on the first porous layer 110 is covered by the first porous layer 110.
It should be appreciated that the orthographic projection of the wafer 130 onto the first porous layer 110 may be covered by the first porous layer 110 (it may be understood that the width of the wafer 130 is equal to the width of the first porous layer 110) or may be covered partially (it may be understood that the width of the wafer 130 is smaller than the width of the first porous layer 110), which is not particularly limited in the present application. The surface of the reference member 140 near the air inlet layer 120 may be sleeved outside the first porous layer 110, or may be further sleeved outside the air inlet layer 120, which is not particularly limited in the present application.
Many factors, such as the inclination of the plane in which the air chuck is placed, the inclination of the bottom surface of the air chuck, or the non-uniformity of the gas in the gas inlet layer, can cause the wafer to be difficult to stably suspend above the top surface of the air chuck. According to the technical scheme provided by the embodiment of the application, the reference part is additionally arranged in the air floating chuck, and the reference part is sleeved outside the first porous layer, so that on one hand, the transmission of the first gas in the first porous layer is not influenced, and on the other hand, the surface of the reference part, which is far away from the air inlet layer, can be used as a reference plane, and the reference plane can be used for distinguishing whether the surface of the first porous layer, which is far away from the air inlet layer, is parallel to the horizontal plane or not and can be used for calibrating the surface of the first porous layer, which is far away from the air inlet layer, when the surface of the first porous layer, which is far away from the air inlet layer, is not parallel to the horizontal plane, so that a wafer can be stably suspended above the top surface of the air floating chuck.
In an embodiment of the present application, the surface of the reference member 140 remote from the gas inlet layer 120 has the same or different reflectivity from the surface of the first porous layer 110 remote from the gas inlet layer 120.
It should be understood that the surface of the reference member 140 away from the gas inlet layer 120 and the surface of the first porous layer 110 away from the gas inlet layer may have the same reflectivity or may have different reflectivities, which is not particularly limited in the present application. The specific value of the reflectivity is not limited as long as the value of the reflectivity can ensure that the geometrical parameters of the wafer are measured by using an interferometer. The reference member 140 may be a solid structure of a non-porous structure, and the reference member 140 may be composed of any material capable of leveling a surface of the reference member away from the intake layer, which is not particularly limited in the present application.
In the embodiment of the application, the surface of the reference component far away from the air inlet layer and the surface of the first porous layer far away from the air inlet layer are provided with a certain reflectivity, so that the measurement of the geometric parameters of the wafer by further utilizing the interferometer is facilitated, and the positioning of the edge of the wafer by utilizing the interference fringe image obtained by the interferometer is also facilitated when the geometric parameters of the wafer are measured.
In one embodiment of the present application, the air chuck further comprises: and a second porous layer 150 located above the surface of the first porous layer 110 remote from the gas inlet layer 120, the second porous layer 150 having a hardness greater than that of the first porous layer 110.
It should be understood that the second porous layer 150 may be a porous structure composed of a porous material, or may be a porous structure designed by man, so long as the hardness of the second porous layer 150 is made to be greater than that of the first porous layer 110, which is not particularly limited in the present application. The pore size of the second porous layer 150 may be the same as or different from that of the first porous layer 110, which is not particularly limited in the present application.
In the embodiment of the application, the second porous layer is additionally arranged above the surface of the first porous layer, which is far away from the air inlet layer, and the hardness of the second porous layer is larger than that of the first porous layer, so that the flatness of the top surface of the air floating chuck is improved by utilizing the second porous layer, and the error caused by too low flatness of the top surface of the air floating chuck to the measurement result of the geometric parameters of the wafer is reduced.
Fig. 4 is a schematic structural diagram of a wafer geometry measuring apparatus according to an embodiment of the application. As shown in fig. 4, the wafer geometry measuring device 400 includes any one of the air chucks 410 provided in the above embodiments of the present application; the interferometer 420 is configured to acquire an interference fringe image of a second surface S 2 of the wafer, so as to perform shape measurement and/or flatness measurement on the wafer based on the interference fringe image, where the second surface is a surface of the wafer away from the air chuck.
It should be understood that the air chuck 410 may be any of the air chucks described in the embodiments of fig. 1-3, or may be any of the air chucks described in the embodiments of fig. 1-3 with equivalent replacement or obvious modification, which is not specifically limited in this disclosure. The interferometer 420 may be a Fizeau interferometer, a Michelson interferometer, a shearing interferometer, or the like, as long as an interference fringe image of the surface of the wafer can be obtained, which is not particularly limited in the present application. The interferometer 420 can be used to measure geometric parameters such as warpage and/or thickness of the wafer in addition to the shape and/or flatness of the wafer, which is not particularly limited in the present application.
According to the technical scheme provided by the embodiment of the application, the air floating chuck is adopted, so that the first gas transmitted by the air inlet layer is uniformly dispersed by utilizing the porous microstructure of the porous material, and uniform air floating conditions are generated, so that the whole surface of the wafer close to the air floating chuck is subjected to uniformly distributed supporting force generated by the first gas, and the wafer can be stably suspended above the top surface of the air floating chuck, and the original shape of the wafer can be effectively maintained. Further, the original shape of the wafer can be effectively maintained by utilizing the air floating chuck, so that obvious deformation caused by uneven stress on the whole surface of the wafer close to the air floating chuck is avoided, and the accuracy of measuring the shape and/or flatness of the wafer by utilizing the interferometer is improved.
It should be noted that, the combination of the technical features in the embodiment of the present application is not limited to the combination described in the embodiment of the present application or the combination described in the specific embodiment, and all the technical features described in the present application may be freely combined or combined in any manner unless contradiction occurs between them.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is to be construed as including any modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (7)
1. An air chuck, comprising:
A first porous layer composed of a porous material, wherein the first porous layer includes a plurality of first regions for passing a first gas and communicating with a first gas supply member and a plurality of second regions for passing a second gas and communicating with a second gas supply member, the plurality of first regions and the plurality of second regions being alternately arranged;
And an air inlet layer which is stacked with the first porous layer and is connected with the first gas supply part for supplying the first gas, and is used for transmitting the first gas to the first porous layer so as to suspend the wafer by using the supporting force provided by the first gas, and is also connected with the second gas supply part for supplying the second gas, and is used for transmitting the second gas through the first porous layer so as to adjust the shape of the first surface of the wafer by using the suction force provided by the second gas, wherein the first surface is the surface of the wafer close to the first porous layer, the middle part of the air inlet layer is a hollow structure, the hollow structure comprises a plurality of hollow structures formed by dividing the first porous layer, the openings of the plurality of hollow structures are contacted with the surface of the first porous layer close to the air inlet layer, and the first gas supplied by the first gas supply part is transmitted to the first porous layer after entering the plurality of hollow structures.
2. The air chuck of claim 1, wherein the porous material comprises one or more of porous carbon, porous polymer, porous ceramic, porous metal.
3. The air chuck of claim 2, wherein the porous metal comprises porous steel.
4. The air chuck as set forth in claim 1, further comprising:
And the reference component is sleeved on the outer side of the first porous layer so as to calibrate the surface of the first porous layer away from the air inlet layer by taking the surface of the reference component away from the air inlet layer as a reference plane, wherein the orthographic projection of the wafer on the first porous layer is covered by the first porous layer.
5. The air chuck of claim 4, wherein a surface of the reference member remote from the air inlet layer has the same or different reflectivity than a surface of the first porous layer remote from the air inlet layer.
6. The air chuck according to any one of claims 1 to 5, further comprising:
And the second porous layer is positioned above the surface of the first porous layer, which is far away from the air inlet layer, and the hardness of the second porous layer is higher than that of the first porous layer.
7. A wafer geometry measuring device, comprising:
The air chuck of any one of claims 1-6;
And the interferometer is used for acquiring an interference fringe image of a second surface of the wafer, so as to perform shape measurement and/or flatness measurement on the wafer based on the interference fringe image, wherein the second surface is a surface of the wafer away from the air floating chuck.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110396624.XA CN113130368B (en) | 2021-04-13 | 2021-04-13 | Air-float chuck and wafer geometric parameter measuring device |
| US17/561,902 US12072176B2 (en) | 2019-12-26 | 2021-12-24 | Measuring apparatus and method of wafer geometry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110396624.XA CN113130368B (en) | 2021-04-13 | 2021-04-13 | Air-float chuck and wafer geometric parameter measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113130368A CN113130368A (en) | 2021-07-16 |
| CN113130368B true CN113130368B (en) | 2024-09-24 |
Family
ID=76776121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110396624.XA Active CN113130368B (en) | 2019-12-26 | 2021-04-13 | Air-float chuck and wafer geometric parameter measuring device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113130368B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113516645B (en) * | 2021-07-23 | 2024-10-15 | 南京中安半导体设备有限责任公司 | Correction method and correction device for imaging plane space and wafer measurement device |
| CN114608475A (en) * | 2022-02-28 | 2022-06-10 | 南京中安半导体设备有限责任公司 | Chuck, phase-shift interferometer and wafer morphology interference measurement method |
| CN114857172A (en) * | 2022-05-30 | 2022-08-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Air supporting mechanism |
| CN115716161A (en) * | 2022-11-18 | 2023-02-28 | 惠州市赢合智能技术有限公司 | Gas suspension laser cutting equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104040709A (en) * | 2011-12-28 | 2014-09-10 | 炭研轴封精工有限公司 | Suction pad |
| CN112635386A (en) * | 2019-12-26 | 2021-04-09 | 南京力安半导体有限公司 | Air-float chuck |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777739A (en) * | 1996-02-16 | 1998-07-07 | Micron Technology, Inc. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers |
| JP4087220B2 (en) * | 2002-10-30 | 2008-05-21 | シーケーディ株式会社 | Non-contact support device |
| JP4494179B2 (en) * | 2004-12-07 | 2010-06-30 | シーケーディ株式会社 | Non-contact support device |
| JP4553376B2 (en) * | 2005-07-19 | 2010-09-29 | 東京エレクトロン株式会社 | Floating substrate transfer processing apparatus and floating substrate transfer processing method |
| US9036326B2 (en) * | 2008-04-30 | 2015-05-19 | Axcelis Technologies, Inc. | Gas bearing electrostatic chuck |
| JP5652832B2 (en) * | 2013-01-08 | 2015-01-14 | レーザーテック株式会社 | Chuck device and chuck method |
| KR102051532B1 (en) * | 2015-06-11 | 2019-12-03 | 에이에스엠엘 네델란즈 비.브이. | Lithographic Apparatus and Method of Loading Substrate |
| US20200266092A1 (en) * | 2019-02-19 | 2020-08-20 | Corning Incorporated | Apparatuses and methods for non-contact holding and measurement of thin substrates |
-
2021
- 2021-04-13 CN CN202110396624.XA patent/CN113130368B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104040709A (en) * | 2011-12-28 | 2014-09-10 | 炭研轴封精工有限公司 | Suction pad |
| CN112635386A (en) * | 2019-12-26 | 2021-04-09 | 南京力安半导体有限公司 | Air-float chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113130368A (en) | 2021-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113130368B (en) | Air-float chuck and wafer geometric parameter measuring device | |
| CN112880597B (en) | Method for measuring wafer flatness | |
| US20150214090A1 (en) | Single ultra-planar wafer table structure for both wafers and film frames | |
| EP3918421B1 (en) | Tool architecture for wafer geometry measurement in semiconductor industry | |
| US20070277655A1 (en) | Cutting apparatus, honeycomb molded body cutting method, and honeycomb structure manufacturing method | |
| CN101336142B (en) | A molded rotatable base for a porous pad | |
| JP5063797B2 (en) | Adsorption member, adsorption device, and adsorption method | |
| TW201229334A (en) | Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer | |
| CN110506321A (en) | The manufacturing method of jacking pin, the epitaxial growth device and silicon epitaxial wafer sold using the jacking | |
| KR101066450B1 (en) | Sample holder, sample adsorption apparatus and sample processing method using the same | |
| CN109475995A (en) | Abrasive body and its manufacturing method | |
| US7501160B2 (en) | Apparatus for coating outer peripheral surface of pillar structure and method for coating outer peripheral surface of pillar structure | |
| US20200266092A1 (en) | Apparatuses and methods for non-contact holding and measurement of thin substrates | |
| KR101149350B1 (en) | The porous ceramics materials with double-layered pore structure for vacuum chuck and method for manufacturing the same | |
| JPH068086A (en) | Vacuum suction device | |
| US20050249877A1 (en) | Device and method for coating outer periphery of pillar structure body | |
| JP2001138228A (en) | Sucking plate, and grinding apparatus provided with the same | |
| JP2012069557A (en) | Porous chuck and method of manufacturing same | |
| JP2004322218A (en) | Vacuum suction device | |
| JP2008028169A (en) | Vacuum adsorption device | |
| US11572315B2 (en) | Thermal insulation member | |
| KR101326025B1 (en) | Apparatus for transferring a wafer | |
| JP4468059B2 (en) | Hydrostatic bearing device | |
| JP4218916B2 (en) | Method of manufacturing support device for object to be measured | |
| JP2019096717A (en) | Substrate suction member and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |