CN113113315B - Method for preventing glue overflow of intelligent power module - Google Patents
Method for preventing glue overflow of intelligent power module Download PDFInfo
- Publication number
- CN113113315B CN113113315B CN202010031012.6A CN202010031012A CN113113315B CN 113113315 B CN113113315 B CN 113113315B CN 202010031012 A CN202010031012 A CN 202010031012A CN 113113315 B CN113113315 B CN 113113315B
- Authority
- CN
- China
- Prior art keywords
- dbc substrate
- lead frame
- protective film
- metal layer
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003292 glue Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000001681 protective effect Effects 0.000 claims abstract description 46
- 238000001746 injection moulding Methods 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 238000005253 cladding Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000002313 adhesive film Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 239000000084 colloidal system Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to the field of power modules, and discloses a method for preventing an intelligent power module from glue overflow, which comprises the following steps: providing a DBC substrate with a metal layer formed on the front surface and the back surface; connecting the lead frame with the metal layer on the front surface of the DBC substrate, and forming a protective film on one side of the metal layer on the back surface of the DBC substrate; injection molding the DBC substrate with the protective film and the lead frame to form a module; the protective film is formed on the back metal layer of the DBC substrate, so that when the DBC substrate with the protective film is subjected to injection molding with the lead frame to form a module, the back metal layer of the DBC substrate is protected, and a colloid substance is not contacted with the back metal layer of the DBC substrate in the injection molding process in the module forming process, so that the normal work of the back metal layer of the DBC substrate is ensured, and the heat dissipation performance of the power module is improved.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to a method for preventing an intelligent power module from glue overflow.
Background
The power chip and the high-voltage driving chip are integrated in the power module, and as the thermal power consumption of the power chip is higher, a DBC substrate is used as a carrier of the power chip under a general condition in order to solve the problem of heat dissipation of the power module, and the back surface of the DBC substrate needs to be completely exposed and cannot be shielded, and is in contact with a radiator for heat dissipation; however, the traditional DBC substrate and the lead frame are assembled by unilateral soldering tin, the DBC substrate and the lead frame are well connected after the assembly is completed, the back of the power module is tightly attached to the mold to prevent glue overflow, the height of the assembled DBC substrate and the lead frame needs to be slightly larger than the depth of a cavity of an injection molding mold, when the mold compresses the lead frame during injection molding, the warp of the fixed end of the DBC substrate without the lead frame is not tightly attached to the mold, the problem of glue overflow during injection molding can be caused due to the warp of the DBC substrate, and the problem of heat dissipation performance reduction of the power module can be caused due to glue overflow of the power module.
Disclosure of Invention
The invention discloses a method for preventing glue overflow of an intelligent power module, which is used for improving the heat dissipation performance of the power module.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention provides a method for preventing an intelligent power module from glue overflow, which comprises the following steps:
providing a DBC substrate with a metal layer formed on the front surface and the back surface;
connecting the lead frame with the metal layer on the front surface of the DBC substrate, and forming a protective film on one side of the metal layer on the back surface of the DBC substrate;
and injection molding the DBC substrate with the protective film and the lead frame to form a module.
The front metal layer on the DBC substrate is connected with the lead frame, the back metal layer of the DBC substrate is provided with the protective film, the DBC substrate provided with the protective film is injection-molded with the lead frame to form a module, and the protective film is formed on the back metal layer of the DBC substrate, so that the back metal layer of the DBC substrate can be protected when the DBC substrate provided with the protective film is injection-molded with the lead frame to form the module, and a colloid substance in the injection molding process is not contacted with the back metal layer of the DBC substrate in the injection molding process, so that the normal work of the back metal layer of the DBC substrate is ensured, the back metal layer of the DBC substrate is well contacted with a radiator, and the heat radiation performance of the power module is improved.
Further, the injection molding of the DBC substrate formed with the protective film and the lead frame includes:
carrying out injection molding for the first time on the DBC substrate with the lead frame, wherein the DBC substrate is provided with the protective film, so as to obtain a sub-module, wherein the sub-module comprises: the cladding body enables the DBC substrate and the lead frame to be relatively fixed along the thickness direction of the sub-module through the cladding body;
after the DBC substrate and the lead frame with the protective films are subjected to first injection molding, removing the protective films of the submodules;
and performing secondary injection molding on the sub-module with the protective film removed to form the module.
And further, when the DBC substrate with the protective film and the lead frame are subjected to first injection molding, placing the DBC substrate with the protective film and the lead frame in an injection mold cavity for standing molding.
Further, the coating body is made of epoxy resin.
Further, the second injection molding is specifically pressure injection molding.
Further, the secondary injection molding is performed using epoxy resin.
Further, the protective film is an adhesive film.
Further, the metal layer material is copper.
Drawings
FIG. 1 is a flow chart provided by an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating an effect of a first injection molding on a DBC substrate according to an embodiment of the present invention;
fig. 3 is a schematic view of the effect of performing the second injection molding on the sub-module according to the embodiment of the present invention.
An icon: 100-DBC substrate; 110-a metal layer; 200-a protective film; 300-a lead frame; 400-cladding; 500-submodule.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The power chip and the high-voltage driving chip are integrated in the power module, and because the power chip has high heat consumption, a DBC substrate is used as a carrier of the power chip under the general condition in order to solve the heat dissipation problem of the power module, and the back surface of the DBC substrate needs to be completely exposed and cannot be shielded, and is in contact with a heat sink for heat dissipation; however, the traditional DBC substrate and the lead frame are assembled through unilateral soldering tin, the DBC substrate and the lead frame are well connected after the assembly is completed, the back face of the power module is tightly attached to the mold to prevent glue overflow, the height of the assembled DBC substrate and the lead frame needs to be slightly larger than the depth of a cavity of an injection molding mold, when the mold compresses the lead frame in the injection molding process, the warp of the fixed end of the DBC substrate without the lead frame is not tightly attached to the mold, the problem of glue overflow in the injection molding process can be caused due to the warp of the DBC substrate, and the problem of heat dissipation performance reduction of the power module can be caused due to glue overflow of the power module.
As shown in fig. 1, a method for preventing glue overflow of an intelligent power module according to an embodiment of the present invention includes the following steps:
s101: providing a DBC substrate with a metal layer formed on the front surface and the back surface;
s102: connecting the lead frame with the metal layer on the front surface of the DBC substrate, and forming a protective film on one side of the metal layer on the back surface of the DBC substrate;
s103: and injection molding the DBC substrate with the protective film and the lead frame to form a module.
The front metal layer 110 on the DBC substrate 100 is connected to the lead frame 300, the protective film 200 is formed on the back metal layer 110 of the DBC substrate 100, and the DBC substrate 100 with the protective film 200 formed thereon and the lead frame 300 are injection molded to form a module, because the protective film 200 is formed on the back metal layer 110 of the DBC substrate 100, when the DBC substrate 100 with the protective film 200 formed thereon and the lead frame 300 are injection molded to form a module, the back metal layer 110 of the DBC substrate 100 can be protected, so that a colloid substance does not contact with the back metal layer 110 of the DBC substrate 100 during injection molding to form a module, thereby ensuring normal operation of the back metal layer 110 of the DBC substrate 100, making the back metal layer 110 of the DBC substrate 100 contact with a heat sink better, and improving heat dissipation performance of the power module.
Specifically, the injection molding of the DBC substrate 100 formed with the protective film 200 and the lead frame 300 includes:
as shown in fig. 2, the DBC substrate 100 formed with the protective film 200 and the lead frame 300 are subjected to a first injection molding to obtain a sub-module 500, and the sub-module 500 includes: a cover 400 through which the DBC substrate 100 and the lead frame 300 are relatively fixed in a thickness direction of the sub-module 500;
when the DBC substrate 100 and the lead frame 300 on which the protective film 200 is formed are injection molded for the first time, the protective film 200 is a detachable hard adhesive film in the DBC substrate 100 on which the protective film 200 is formed, and when the DBC substrate 100 and the lead frame 300 on which the protective film 200 is formed are injection molded for the first time, the DBC substrate 100 and the lead frame 300 on which the protective film 200 is formed are placed in an injection mold cavity to be still molded, and at this time, the lead frame 300 does not need to be pressed, the protective film 200 on the back surface of the DBC is removed after the resin is cured, and at this time, the depths of the lead frame 300 and the DBC substrate 100 are fixed by the cover 400 during the first injection.
Specifically, the coating 400 is epoxy resin; the protective film 200 is an adhesive film.
As shown in fig. 3, after the DBC substrate 100 formed with the protective film 200 and the lead frame 300 are injection-molded by the first time, the protective film 200 of the sub-module 500 is removed;
the sub-module 500 from which the protective film 200 is removed is injection molded a second time to form a module.
Because the two sides of the lead frame 300 and the DBC substrate 100 are all stressed in a balanced manner, the phenomenon that one side of the DBC substrate 100 is warped due to the second injection molding can be avoided, and the glue overflow in the warped surface can be effectively avoided.
The second injection molding is specifically pressure injection molding, and epoxy resin is adopted for secondary injection molding.
The material of the metal layer 110 formed on the front and back surfaces of the DBC substrate 100 is copper.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (7)
1. A method for preventing glue overflow of an intelligent power module is characterized by comprising the following steps:
providing a DBC substrate with a metal layer formed on the front surface and the back surface;
connecting the lead frame with the metal layer on the front side of the DBC substrate, and forming a protective film on one side of the metal layer on the back side of the DBC substrate;
injection molding the DBC substrate with the protective film and the lead frame to form a module;
the DBC substrate and the lead frame injection molding that will be formed with the protection film include:
and carrying out first injection molding on the DBC substrate with the protective film and the lead frame to obtain a sub-module, wherein the sub-module comprises: the cladding body enables the DBC substrate and the lead frame to be relatively fixed along the thickness direction of the sub-module;
after the DBC substrate and the lead frame with the protective films are subjected to first injection molding, removing the protective films of the submodules;
and carrying out secondary injection molding on the sub-module with the protective film removed to form the module.
2. The method according to claim 1, wherein the DBC substrate with the protective film and the lead frame are placed in an injection mold cavity for static molding when the DBC substrate with the protective film and the lead frame are subjected to the first injection molding.
3. The method of claim 1, wherein the cladding is an epoxy.
4. Method according to claim 1, characterized in that the second injection moulding is in particular compression injection moulding.
5. A method according to claim 1 or 3, characterized in that the overmolding is carried out with an epoxy resin.
6. The method according to any one of claims 1-2, wherein the protective film is an adhesive film.
7. The method of claim 1, wherein the metal layer material is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010031012.6A CN113113315B (en) | 2020-01-13 | 2020-01-13 | Method for preventing glue overflow of intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010031012.6A CN113113315B (en) | 2020-01-13 | 2020-01-13 | Method for preventing glue overflow of intelligent power module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113113315A CN113113315A (en) | 2021-07-13 |
| CN113113315B true CN113113315B (en) | 2023-03-31 |
Family
ID=76709151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010031012.6A Active CN113113315B (en) | 2020-01-13 | 2020-01-13 | Method for preventing glue overflow of intelligent power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113113315B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1130807A (en) * | 1994-11-22 | 1996-09-11 | 索尼株式会社 | Lead frame and manufacturing method thereof |
| CN101847589A (en) * | 2009-03-28 | 2010-09-29 | 丹佛斯硅动力股份有限公司 | Make the method for the rigid power module that is fit to high-voltage applications |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101505552B1 (en) * | 2008-03-31 | 2015-03-24 | 페어차일드코리아반도체 주식회사 | Complex semiconductor package and method of fabricating the same |
| DE112012004032A5 (en) * | 2011-09-27 | 2014-07-24 | Rupprecht Gabriel | Electrically insulating resin housing for semiconductor devices or assemblies and manufacturing processes using a molding process |
| CN110120354B (en) * | 2019-05-06 | 2024-05-28 | 珠海零边界集成电路有限公司 | Intelligent power module packaging method and intelligent power module |
-
2020
- 2020-01-13 CN CN202010031012.6A patent/CN113113315B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1130807A (en) * | 1994-11-22 | 1996-09-11 | 索尼株式会社 | Lead frame and manufacturing method thereof |
| CN101847589A (en) * | 2009-03-28 | 2010-09-29 | 丹佛斯硅动力股份有限公司 | Make the method for the rigid power module that is fit to high-voltage applications |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113113315A (en) | 2021-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9892996B2 (en) | Semiconductor device, semiconductor device manufacturing method and semiconductor device mounting structure | |
| CN102738351B (en) | Light emitting diode (LED) packaging structure and manufacturing method thereof | |
| CN1121261A (en) | Lead frames and semiconductor devices | |
| JP5153684B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
| JP2013030649A (en) | Semiconductor module and manufacturing method of the same | |
| JP2006100752A (en) | Circuit arrangement and its manufacturing method | |
| CN106158783B (en) | Radiating fin device with glue overflow preventing structure | |
| JP2929433B2 (en) | Deburring method for semiconductor package | |
| JP2002329815A (en) | Semiconductor device, its manufacturing method and its production device | |
| CN113113315B (en) | Method for preventing glue overflow of intelligent power module | |
| CN101101881A (en) | Heat dissipation type package structure and manufacturing method thereof | |
| CN211150544U (en) | Heat sink for packaging module and packaging module | |
| US20080258318A1 (en) | Semiconductor device | |
| CN216354195U (en) | Pre-injection molding type pad-free QFN (quad flat no-lead) packaging substrate | |
| CN210956665U (en) | Intelligent power module and electronic equipment | |
| CN212392243U (en) | Transistor power module packaging structure | |
| CN211165092U (en) | Injection mold | |
| US20230009221A1 (en) | Semiconductor packages including different type semiconductor chips having exposed top surfaces and methods of manufacturing the semiconductor packages | |
| CN214544942U (en) | Encapsulating carrier | |
| CN107978530B (en) | Method for reducing injection molding flash of IPM module and DBC substrate | |
| JP3787131B2 (en) | Mold used for manufacturing BGA package | |
| JP2934174B2 (en) | Electronic component manufacturing method | |
| CN112420649A (en) | Chip packaging structure and electronic product | |
| CN218333789U (en) | Substrate and semiconductor device | |
| CN102832183B (en) | Outer-pin-free flat semiconductor package structure adopting elastic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |