CN113097108A - Control method of semiconductor process and semiconductor process equipment - Google Patents
Control method of semiconductor process and semiconductor process equipment Download PDFInfo
- Publication number
- CN113097108A CN113097108A CN202110348035.4A CN202110348035A CN113097108A CN 113097108 A CN113097108 A CN 113097108A CN 202110348035 A CN202110348035 A CN 202110348035A CN 113097108 A CN113097108 A CN 113097108A
- Authority
- CN
- China
- Prior art keywords
- preset
- gas
- function
- control method
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 315
- 230000008569 process Effects 0.000 title claims abstract description 223
- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 230000008859 change Effects 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims description 10
- 238000012886 linear function Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a control method of a semiconductor process, which is applied to an air inlet assembly of semiconductor process equipment and comprises the following steps: receiving a gas intake process recipe, wherein the gas intake process recipe comprises preset process parameter variation corresponding to at least one gas intake control quantity corresponding to the semiconductor process step, and the gas intake control quantity comprises at least one of flow rate of process gas provided for the process chamber and gas pressure in the process chamber; when the semiconductor process step is executed, the corresponding air inlet control quantity is controlled according to the preset function and is gradually increased along with the change of the preset process parameter until the preset process parameter reaches the preset process parameter variable quantity corresponding to the air inlet control quantity. The control method provided by the invention can realize slow-release air intake, improve the stability of an air flow field in the process chamber, avoid the position of the wafer from deviating, reduce the stress difference distance between the membrane layers and improve the quality of the membrane. The invention also provides semiconductor process equipment.
Description
Technical Field
The invention relates to the field of semiconductor process, in particular to a control method of a semiconductor process and semiconductor process equipment.
Background
In the field of semiconductor processing, before a semiconductor process (e.g., a CVD (Chemical Vapor Deposition) process, an ALD (Atomic Layer Deposition) process, or a PVD (Physical Vapor Deposition) process) is performed, a process chamber is usually in a vacuum state, and after a wafer is transferred into the process chamber, a susceptor is raised or a wafer is lowered to place the wafer on the surface of the susceptor (this process step is referred to as a Ped-up, which is a preparation step for chamber gas inlet). After the Ped-up process step is completed, the process Gas is introduced into the process chamber, and simultaneously the chamber pressure is controlled to a target value, and the process is started to be executed (the process step is called Gas-on, and is a chamber Gas inlet process step).
However, when the existing semiconductor processing equipment performs the semiconductor process, the wafer often slides after the Ped-up process step, which affects the uniformity and film performance of the deposited film on the wafer surface, and the film grown on the wafer surface often has the problems of surface warpage, peeling and the like, and the product yield is low.
Therefore, how to provide a semiconductor process control method capable of improving the uniformity of a deposited film in a semiconductor process and improving the quality of the film becomes a technical problem to be solved in the field.
Disclosure of Invention
The invention aims to provide a control method of a semiconductor process and semiconductor process equipment, wherein the control method can improve the uniformity of a deposited film of the semiconductor process and improve the quality of the film.
To achieve the above object, according to one aspect of the present invention, there is provided a control method for a semiconductor process, applied to a gas inlet assembly of a semiconductor process apparatus, the gas inlet assembly being used for supplying gas to a process chamber of the semiconductor process apparatus, the control method comprising:
receiving a gas intake process recipe, wherein the gas intake process recipe comprises preset process parameter variation corresponding to at least one gas intake control quantity corresponding to a semiconductor process step, and the gas intake control quantity comprises at least one of flow rate of process gas provided for the process chamber and gas pressure in the process chamber;
when the semiconductor process step is executed, the corresponding air inlet control quantity is controlled according to a preset function and is gradually increased along with the change of preset process parameters until the preset process parameters reach the preset process parameter variable quantity corresponding to the air inlet control quantity.
Optionally, when the semiconductor process step is executed, controlling the corresponding intake air control amount according to a preset function to gradually increase with a change of a preset process parameter until the preset process parameter reaches a preset process parameter variation amount corresponding to the intake air control amount specifically includes:
if the air intake control quantity corresponds to the preset function, when the semiconductor process step is executed, the air intake control quantity corresponding to the preset function is controlled to gradually increase along with the change of the preset process parameter until the preset process parameter reaches the preset process parameter variation quantity corresponding to the air intake control quantity.
Optionally, the intake process recipe further includes a target control amount corresponding to at least one intake control amount corresponding to a semiconductor process step, and the control method further includes:
if the intake control amount does not correspond to the preset function, the intake control amount is adjusted to the corresponding target control amount before the semiconductor process step is started, and the intake control amount is kept unchanged as the corresponding target control amount when the semiconductor process step is executed.
Optionally, the preset process parameter is a time period for executing the semiconductor process step.
Optionally, the preset function is a continuous function.
Optionally, the preset function is a continuously derivable function.
Optionally, the preset function is a unary linear function, a logarithmic function, a power exponent function, a binary function, a ternary function, or a parabolic equation.
Optionally, the inlet gas process recipe further includes a target process parameter value corresponding to the semiconductor process step, and the control method further includes:
and after the preset process parameter corresponding to the air inlet control quantity reaches the corresponding preset process parameter variable quantity, keeping the air inlet control quantity unchanged until the preset process parameter reaches the target process parameter value.
Optionally, the preset process parameter is a time length for executing the semiconductor process step, and the target process parameter value is a total time length corresponding to the semiconductor process step.
As a second aspect of the present invention, there is provided a semiconductor processing apparatus comprising a process chamber and a gas inlet assembly for providing a gas to the process chamber, the gas inlet assembly being capable of implementing the control method as hereinbefore described.
In the control method and the semiconductor process equipment provided by the invention, the flow rate of the process gas supplied to the process chamber by the gas inlet assembly or the gas pressure in the process chamber can be increased along with the change of the preset process parameters according to the preset function, so that the slow-release gas inlet can be realized at the beginning of the gas inlet process step, the stability of a gas flow field in the process chamber is improved, and the position of a wafer is prevented from deviating.
In the invention, the gas inlet component provides the inlet flow of the process gas or the gas pressure in the process chamber changes from small to large, so that the component change of the deposited film is more gradual, the combination with the lower film or the substrate is firmer, the stress difference between the film layers is smaller, and the film quality is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a process chamber in a typical semiconductor processing apparatus;
FIG. 2 is a schematic view of a position where a wafer is placed on a susceptor;
FIG. 3 is a schematic view of a wafer after slipping;
FIG. 4 is a schematic illustration of film growth in the prior art;
FIG. 5 is a schematic view showing the growth of a thin film in an embodiment using the control method provided by the present invention;
FIG. 6 is a flow chart of a control method provided by an embodiment of the invention;
FIG. 7 is a flow chart illustrating a control method according to another embodiment of the present invention;
FIG. 8 is a flow chart illustrating a control method according to another embodiment of the present invention;
fig. 9 is a schematic flow chart of a control method according to another embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Fig. 1 is a schematic diagram of a process chamber in a typical semiconductor processing apparatus, the process chamber comprising: the device comprises a cavity 1, a base 2, a uniform air window 3, a quartz window 4 and an air inlet 5. When the process is executed, the wafer 6 is conveyed into the chamber 1 by the mechanical arm and is placed on the base 2, the process gas enters the gas homogenizing chamber between the quartz window 4 and the gas homogenizing window 3 through the gas inlet hole 5 above the gas homogenizing window 3, then enters the process chamber below the gas homogenizing window 3 through the gas homogenizing window 3, the whole process chamber is filled with the process gas, and the wafer 6 is placed in the process gas.
Typically, the robot transfers the wafer 6 into the chamber and places it in the very middle of the susceptor 2, as shown in FIG. 2. However, since a large amount of process gas and a large process pressure (usually, the flow rate of the process gas is higher than 1000sccm (Standard Cubic center tester per Minute), and the process pressure is higher than 100mtorr) are required in the semiconductor process such as CVD, a large amount of gas introduced into the process chamber is very likely to cause disturbance of the gas flow in the chamber during the process, so that the wafer 6 changes its relative position with respect to the susceptor 2 under the action of the gas flow, and the slip problem shown in fig. 3 occurs.
For example, as shown in Table 1 below, a Gas inlet process recipe used in a conventional semiconductor process is used to provide a process Gas (which may be one or more of Ar, N2, O2, C2H2, etc.) at a flow rate of 30000sccm into a process chamber during a Gas-on process step, and to maintain a pressure of about 6.0 torr. In the process, the chamber is introduced with 30000sccm of process Gas for a short time, the pressure of the chamber is changed from 0torr (for example, the original pressure of the process chamber is 10^ -3torr) to 6.0torr in a short time before the Gas-on process step begins, the Gas flow in the chamber changes suddenly and disturbs the wafer on the pedestal, thereby generating the slip sheet problem.
TABLE 1
Once the wafer 6 slips in the chamber, the uniformity of the deposited film on the surface of the wafer 6 and the performance of the film are affected, and the process is also affected, and in a severe case, the wafer 6 may collide with the chamber 1 to generate particles or fragments. On the other hand, the robot may also be affected by taking out the wafer 6 from the chamber after performing the process, for example, the wafer 6 may be deflected when separating from the susceptor 2, the wafer 6 may be cracked when the robot takes out the wafer 6, or the wafer 6 may be successfully taken out by the robot but collided with the chamber when moving the wafer 6 out of the chamber, or the wafer 6 may be successfully taken out by the robot due to a large sliding position of the wafer 6, but the wafer 6 may drop from the robot due to a large offset distance, so that the semiconductor process is forced to be stopped, the productivity of the machine is affected, and additional maintenance cost is increased.
Moreover, for the processes of thin film deposition and thin film processing (such as PVD, CVD, ALD, etc.), the component difference between the thin film to be grown and processed and the lower thin film or the substrate is usually large, and since the physical and chemical properties of different substances are large, in the process of rapidly growing to obtain the thin film, the component or property difference between the newly grown thin film and the lower thin film or the substrate is very large, which may cause the thin film or the whole wafer to generate stress bending, or cause the bonding force between the thin films to be weak, which may cause the peeling phenomenon, which may affect the thin film deposition quality (as shown in fig. 4, the difference between the newly grown thin film and the lower thin film or the substrate is very significant for the thin film growth corresponding to the gas inlet process formula shown in table 1).
In order to solve the above technical problems, as an aspect of the present invention, there is provided a control method for a semiconductor process, applied to a gas inlet assembly of a semiconductor process equipment, the gas inlet assembly being used for supplying gas to a process chamber of the semiconductor process equipment, as shown in fig. 6to 9, the control method comprising:
step S1, receiving an air intake process formula, wherein the air intake process formula comprises preset process parameter variation corresponding to at least one air intake control quantity corresponding to the semiconductor process step, and the air intake control quantity comprises at least one of flow rate of process gas provided for the process chamber and gas pressure in the process chamber;
step S2, when executing the semiconductor process step, controlling the corresponding intake air control amount to gradually increase along with the change of the preset process parameter x according to the preset function f (x) until the preset process parameter x reaches the preset process parameter variation amount corresponding to the intake air control amount.
The process parameter or the variable related to the preset process parameter x is not specifically limited in the embodiment of the present invention, as long as the preset process parameter x can be used as a reference quantity for reflecting the gas inlet progress, for example, as an implementation manner easy to implement, the preset process parameter x may be a time length t for providing the process gas to the process chamber by the gas inlet assembly. Alternatively, in other embodiments of the present invention, the preset process parameter x may be the opening of a corresponding valve (e.g., a butterfly valve) on the process chamber or the heater temperature of the susceptor in the process chamber, etc.
In the control method provided by the invention, the flow F of the process Gas provided by the Gas inlet assembly to the process chamber can be gradually increased along a curve of a preset flow function F-F1 (x) (namely a preset function corresponding to the flow F) along with the change of a preset process parameter x along with the progress of the Gas-on process step, or the Gas pressure P in the process chamber can be gradually increased along a curve of a preset pressure function P-F2 (x) (namely a preset function corresponding to the pressure P) along with the change of the preset process parameter x along with the progress of the Gas-on process step, so that the slow release Gas inlet or the slow change of the pressure in the chamber can be realized at the beginning of the Gas-on process step, the phenomenon that the Gas inlet amount changes suddenly during the switching among the steps and the Gas flow field in the process chamber changes suddenly is avoided, the stability of the Gas flow field in the process chamber is further improved, and the deviation of the position of a wafer is avoided, the safety of the semiconductor process is improved, and the stable operation of semiconductor process equipment can be ensured under the condition of continuous running.
In addition, in the control method provided by the invention, the Gas inflow rate F of the process Gas changes from small to large (the starting point is preferably 0sccm) in the Gas-on process (or the Gas pressure P in the process chamber changes from small to large), so that the component change of the deposited film is more gradual, the combination with the lower film or the substrate is firmer, the stress difference distance between the film layers is smaller, and the film quality is improved. As shown in fig. 5, the deposition process of the thin film deposited by the control method provided by the present invention is affected by the change of the flow rate F of the process gas from small to large, and the components of the thin film show an obvious continuous change trend, thereby effectively reducing the problem of stress difference caused by component difference between the thin films.
To ensure the smoothness of the change in the process gas feed flow rate F, it is preferable that the preset function F ═ F (x) be a continuous function.
In order to ensure smooth transition of the film composition and performance, further improve the film quality, and reduce the disturbance of the gas flow in the process chamber, the preset function F ═ F (x) is preferably a continuously conducting function.
It should be noted that the preset function F ═ F (x) can be determined experimentally in advance by an experimental developer, specifically, the preset function F ═ F (x) can achieve the best process effect by applying a pre-simulation calculation through the process, then correcting the result of the experiment, and repeatedly modifying and re-verifying the simulation calculation function.
In the embodiment of the present invention, the type of the preset function F ═ F (x) is not specifically limited, for example, the preset function F ═ F (x) may be an unary linear function y ═ ax + b; alternatively, in some embodiments of the present invention, the preset function F ═ F (x) may also be a logarithmic function y ═ logax, power exponential function y ═ ax+ b, binary function y ═ ax2+ bx + c, a ternary function, a parabolic equation, etc.
It should be noted that only one of the intake control amounts may correspond to a preset function, and the other may be a constant value during the intake process, for example, step S2 may specifically include:
if the air intake control quantity corresponds to a preset function, when the semiconductor process step is executed, the air intake control quantity corresponding to the preset function is controlled to gradually increase along with the change of the preset process parameter until the preset process parameter reaches the preset process parameter variation corresponding to the air intake control quantity.
In some embodiments of the present invention, one of the inlet control amounts may be a constant value in the near term, which may be specified before the semiconductor process step is started, for example, the inlet process recipe further includes a target control amount corresponding to at least one inlet control amount corresponding to the semiconductor process step, as shown in fig. 7 and 9, and the method may further include:
and step S3, if the controlled amount of inlet air corresponds to the predetermined function, adjusting the controlled amount of inlet air to the corresponding target controlled amount before the semiconductor processing step is started, and keeping the controlled amount of inlet air unchanged when the semiconductor processing step is executed.
To ensure that the reaction is completely performed, preferably, the feed gas process recipe further includes target process parameter values, as shown in fig. 8 and 9, and the control method further includes:
and step S4, keeping the air inlet control quantity unchanged until the preset process parameter x reaches the target process parameter value after the preset process parameter corresponding to the air inlet control quantity reaches the corresponding preset process parameter variation. When the preset process parameter x is the time length for executing the semiconductor process step, the target process parameter value is the total time length corresponding to the semiconductor process step.
To reduce the process writing steps and the error probability, the inlet gas recipe may be preferably sent to the inlet module through a recipe table, for example, table 2 below is an embodiment of the recipe table for recording the process recipe according to the embodiment of the present invention, where the preset process parameter x is an inlet time (time for providing the process gas) t, and the process gas is argon (Ar).
TABLE 2
| |
1 | 2 |
| Step Name | Ped-up | Ga-son |
| Time/s | t1 | t2 |
| Gason Duration Time | 0.0 | t3 |
| Ar/sccm (for example, Ar gas) | F1 | F2 |
| Ped | Up | Up |
| Press Mode | FullOpen | Pressure |
| Pressure/torr | P1 | P2 |
| Pressure Reach Time | 0.0 | t4 |
As shown in Table 2, the process step of inlet air preparation, Ped-up, lasts for a short time t1Intake assembly at flow rate F1The process gas may be provided to the process chamber (which may be zero) and the gas inlet assembly may be set to a gas inlet Duration (Gason Duration Time) t after the wafer is seated on the tray3Gradually increasing the intake flow F according to a preset flow function F ═ F1(x) along with the change of the intake time t within the preset process parameter variation until the intake time t reaches the gas intake duration t3(at this time, the intake air flow rate F reaches the target flow rate value F2). Subsequently, the intake time t reaches the target intake time t given in the process recipe2(i.e., target process parameter value) before (t)2-t3) Maintaining the intake flow rate F at the target flow rate value F for a period of time2。
In the process step Ped-up of the air inlet preparation, the air inlet assembly is in a FullOpen mode, the process chamber is not pressurized, and after the wafer is placed on the tray, in the Gas-on process step, the air inlet assembly can Reach Time (Pressure Reach Time) t at the specified Pressure4Gradually increasing the gas pressure P in the process chamber according to the preset pressure function P ═ f2(x) along with the change of the gas inlet time t (namely the preset process parameter change) until the gas inlet time t reaches the specified pressure reaching time t4(at this point the gas pressure P reaches the target pressure value P2). Subsequently, the intake time t reaches the target intake time t given in the process recipe2Front (t)2-t4) Maintaining the intake air flow rate P at the target pressure value P for a period of time2。
The invention also provides a concrete implementation method of the process formula table, which is convenient for a person skilled in the art to understandAs shown in table 3, in this embodiment, the preset flow function F ═ F (x) 3000t, i.e., the intake flow F is a linear function of time t, and the gas pressure P does not correspond to the preset pressure function. Setting t in a process recipe provided to an air intake assembly1＝1.0s，t2＝20.0s，t3＝10.0s，t4＝0.0s，F1＝0sccm，F2＝30000sccm，P1＝0torr，P2＝6.0torr。
TABLE 3
| |
1 | 2 |
| Step Name | Ped-up | Gason |
| Time/s | 1.0 | 20.0 |
| Gason Duration Time | 0.0 | 10.0 |
| Ar/sccm (for example, Ar gas) | 0 | 30000 |
| Ped | Up | Up |
| Press Mode | FullOpen | Pressure |
| Pressure/torr | 0 | 6 |
| Pressure Reach Time | 0.0 | 0.0 |
When the process is executed according to the process formula, the air inlet assembly automatically controls the size of the air flow and the opening change of the butterfly valve in a closed loop manner, so that the air inlet flow F of the process gas is gradually changed along with the Time within the target air inlet Time (Gason Duration Time)10.0s and the air flow function F (F1 (x) ═ 3000 t), the air flow F is gradually increased to 30000sccm from 0sccm within 10 seconds, and the air inlet flow F reaches the target flow value F when the air inlet flow F reaches the target flow value F2After t2-t3The chamber inlet flow rate F was maintained at 30000sccm for a period of 10.0 s. Meanwhile, the gas pressure P does not correspond to a preset pressure function, and the reaching time t of the pressure is regulated4At 0, the gas pressure P in the process chamber was increased to 6torr before the semiconductor process step was started and then kept constant at 6torr during the semiconductor process step.
As a second aspect of the present invention, there is provided a semiconductor processing apparatus comprising a process chamber and the gas inlet assembly, wherein the gas inlet assembly is used for providing gas to the process chamber, and the gas inlet assembly is capable of implementing the control method provided by the embodiment of the present invention.
In the semiconductor process equipment provided by the invention, the flow F of the process Gas provided by the Gas inlet assembly to the process chamber can be gradually increased along the curve of the preset flow function F-F1 (x) (namely the preset function corresponding to the flow F) along with the change of the preset process parameter x along with the progress of the Gas-on process step, or the Gas pressure P in the process chamber can be gradually increased along the curve of the preset pressure function P-F2 (x) (namely the preset function corresponding to the pressure P) along with the change of the preset process parameter x along with the progress of the Gas-on process step, so that the slow release Gas inlet or the slow change of the pressure in the chamber can be realized at the beginning of the Gas-on process step, the phenomenon that the Gas inlet amount changes suddenly during the switching among the steps and the airflow field in the process chamber changes suddenly is avoided, and the stability of the Gas flow field in the process chamber is further improved, the wafer position is prevented from deviating, the safety of the semiconductor process is improved, and the stable operation of semiconductor process equipment can be ensured under the condition of continuous wafer running.
In addition, in the semiconductor process equipment provided by the invention, the Gas inflow F of the process Gas changes from small to large (the starting point is preferably 0sccm) in the Gas-on process (or the Gas pressure P in the process chamber changes from small to large), so that the component change of the deposited film is more gradual, the combination with the lower film or the substrate is firmer, the stress difference distance between the film layers is smaller, and the film quality is improved. As shown in FIG. 5, the deposition process of the thin film deposited by the control method provided by the invention is influenced by the change process of the flow F of the process gas from small to large, the components of the thin film have an obvious continuous change trend, the problem of stress difference caused by component difference among the thin films is effectively reduced, and the film forming quality is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A control method of a semiconductor process, which is applied to a gas inlet assembly of semiconductor process equipment, wherein the gas inlet assembly is used for supplying gas to a process chamber of the semiconductor process equipment, and the control method comprises the following steps:
receiving a gas intake process recipe, wherein the gas intake process recipe comprises preset process parameter variation corresponding to at least one gas intake control quantity corresponding to a semiconductor process step, and the gas intake control quantity comprises at least one of flow rate of process gas provided for the process chamber and gas pressure in the process chamber;
when the semiconductor process step is executed, the corresponding air inlet control quantity is controlled according to a preset function and is gradually increased along with the change of preset process parameters until the preset process parameters reach the preset process parameter variable quantity corresponding to the air inlet control quantity.
2. The control method according to claim 1, wherein the controlling the corresponding intake air control amount according to a preset function gradually increases with a change of a preset process parameter until the preset process parameter reaches a preset process parameter variation amount corresponding to the intake air control amount when the semiconductor process step is performed, specifically comprises:
if the air intake control quantity corresponds to the preset function, when the semiconductor process step is executed, the air intake control quantity corresponding to the preset function is controlled to gradually increase along with the change of the preset process parameter until the preset process parameter reaches the preset process parameter variation quantity corresponding to the air intake control quantity.
3. The control method of claim 2, wherein the inlet gas process recipe further includes a target control quantity corresponding to at least one inlet gas control quantity corresponding to a semiconductor process step, the control method further comprising:
if the intake control amount does not correspond to the preset function, the intake control amount is adjusted to the corresponding target control amount before the semiconductor process step is started, and the intake control amount is kept unchanged as the corresponding target control amount when the semiconductor process step is executed.
4. The control method of claim 1, wherein the predetermined process parameter is a duration of time for performing the semiconductor process step.
5. Control method according to claim 1, characterized in that the preset function is a continuous function.
6. Control method according to claim 5, characterized in that the preset function is a continuously derivable function.
7. The control method according to claim 6, wherein the preset function is a unary linear function, a logarithmic function, a power exponential function, a binary function, a ternary function, or a parabolic equation.
8. The control method of any one of claims 1 to 7, wherein the inlet gas process recipe further comprises target process parameter values corresponding to the semiconductor process steps, the control method further comprising:
and after the preset process parameter corresponding to the air inlet control quantity reaches the corresponding preset process parameter variable quantity, keeping the air inlet control quantity unchanged until the preset process parameter reaches the target process parameter value.
9. The control method according to claim 8, wherein the predetermined process parameter is a time period for performing the semiconductor process step, and the target process parameter value is a total time period corresponding to the semiconductor process step.
10. A semiconductor processing apparatus comprising a process chamber and a gas inlet assembly for providing a gas to the process chamber, wherein the gas inlet assembly is capable of implementing a control method as claimed in any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110348035.4A CN113097108A (en) | 2021-03-31 | 2021-03-31 | Control method of semiconductor process and semiconductor process equipment |
| PCT/CN2021/141910 WO2022206061A1 (en) | 2021-03-31 | 2021-12-28 | Semiconductor process control method and semiconductor process device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110348035.4A CN113097108A (en) | 2021-03-31 | 2021-03-31 | Control method of semiconductor process and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113097108A true CN113097108A (en) | 2021-07-09 |
Family
ID=76671770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110348035.4A Pending CN113097108A (en) | 2021-03-31 | 2021-03-31 | Control method of semiconductor process and semiconductor process equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113097108A (en) |
| WO (1) | WO2022206061A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114496703A (en) * | 2021-11-04 | 2022-05-13 | 上海稷以科技有限公司 | Method for realizing stable etching rate in large-scale mass production |
| WO2022206061A1 (en) * | 2021-03-31 | 2022-10-06 | 北京北方华创微电子装备有限公司 | Semiconductor process control method and semiconductor process device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040261704A1 (en) * | 2001-10-17 | 2004-12-30 | Michael Heuken | Method and device for monitoring a CVD-process |
| CN101228618A (en) * | 2005-06-20 | 2008-07-23 | 奥立孔美国公司 | A method and apparatus for process control in a time division multiplexing (TDM) etching process |
| CN111599718A (en) * | 2020-05-15 | 2020-08-28 | 北京北方华创微电子装备有限公司 | Backpressure gas circuit device, reaction chamber base backpressure control method and reaction chamber |
| CN111831022A (en) * | 2019-04-18 | 2020-10-27 | 北京七星华创流量计有限公司 | Chamber pressure control method and device and semiconductor equipment |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101727111B (en) * | 2008-10-15 | 2011-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method, device and system for chamber pressure control |
| CN103985797B (en) * | 2014-05-05 | 2016-08-24 | 湘能华磊光电股份有限公司 | Multi-quantum pit structure and growing method thereof and there is the LED chip of this structure |
| CN106711022B (en) * | 2016-12-26 | 2019-04-19 | 中国电子科技集团公司第五十五研究所 | A kind of preparation method of growth doped interface clearly silicon carbide epitaxial film |
| CN109545920A (en) * | 2018-11-30 | 2019-03-29 | 江苏中谷光电股份有限公司 | A kind of LED epitaxial slice preparation method |
| CN111005068A (en) * | 2019-12-09 | 2020-04-14 | 中国电子科技集团公司第五十五研究所 | Method for growing high-surface-quality ultra-thick IGBT structure silicon carbide epitaxial material |
| CN111276581B (en) * | 2020-01-26 | 2021-09-14 | 江苏源冠汽车配件有限公司 | Method for improving lighting effect of automobile lighting source |
| CN113097108A (en) * | 2021-03-31 | 2021-07-09 | 北京北方华创微电子装备有限公司 | Control method of semiconductor process and semiconductor process equipment |
-
2021
- 2021-03-31 CN CN202110348035.4A patent/CN113097108A/en active Pending
- 2021-12-28 WO PCT/CN2021/141910 patent/WO2022206061A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040261704A1 (en) * | 2001-10-17 | 2004-12-30 | Michael Heuken | Method and device for monitoring a CVD-process |
| CN101228618A (en) * | 2005-06-20 | 2008-07-23 | 奥立孔美国公司 | A method and apparatus for process control in a time division multiplexing (TDM) etching process |
| CN111831022A (en) * | 2019-04-18 | 2020-10-27 | 北京七星华创流量计有限公司 | Chamber pressure control method and device and semiconductor equipment |
| CN111599718A (en) * | 2020-05-15 | 2020-08-28 | 北京北方华创微电子装备有限公司 | Backpressure gas circuit device, reaction chamber base backpressure control method and reaction chamber |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022206061A1 (en) * | 2021-03-31 | 2022-10-06 | 北京北方华创微电子装备有限公司 | Semiconductor process control method and semiconductor process device |
| CN114496703A (en) * | 2021-11-04 | 2022-05-13 | 上海稷以科技有限公司 | Method for realizing stable etching rate in large-scale mass production |
| CN114496703B (en) * | 2021-11-04 | 2023-10-10 | 上海稷以科技有限公司 | Method for realizing stable etching rate in large-scale mass production |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022206061A1 (en) | 2022-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6156382A (en) | Chemical vapor deposition process for depositing tungsten | |
| KR101379089B1 (en) | Metal hard mask fabrication | |
| CN110218984B (en) | Thin film deposition method | |
| US9758865B2 (en) | Silicon film forming method, thin film forming method and cross-sectional shape control method | |
| CN113097108A (en) | Control method of semiconductor process and semiconductor process equipment | |
| US20040076767A1 (en) | Method of manufacturing silicon carbide film | |
| EP1995770A1 (en) | Method of seasoning film-forming apparatus | |
| US10858736B2 (en) | Atomic layer deposition method | |
| US20060154383A1 (en) | Processing apparatus and processing method | |
| US7273818B2 (en) | Film formation method and apparatus for semiconductor process | |
| WO2011021538A1 (en) | Substrate treating apparatus, arithmetic control mechanism, air-release valve, and pressure control method | |
| TW202136564A (en) | Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus | |
| CN110468388B (en) | Method for forming nitride film by atomic layer deposition method | |
| CN114369804A (en) | Thin film deposition method | |
| JP2000265272A (en) | Formation of tungsten layer and laminated structure of tungsten layer | |
| US20220033964A1 (en) | Chemical vapor deposition process and method of forming film | |
| US5963836A (en) | Methods for minimizing as-deposited stress in tungsten silicide films | |
| US20100093181A1 (en) | Purge step-controlled sequence of processing semiconductor wafers | |
| CN111254411B (en) | Preparation method of metal film and metal film structure | |
| CN118064876B (en) | Chemical vapor deposition method and apparatus | |
| US20220064788A1 (en) | Adhesion removal method and film-forming method | |
| JP4515550B2 (en) | Thin film formation method | |
| US6448180B2 (en) | Deposition of in-situ doped semiconductor film and undoped semiconductor film in the same reaction chamber | |
| KR102208874B1 (en) | Silicon-containing film etching method, computer-readable storage medium, and silicon-containing film etching apparatus | |
| CN119824394B (en) | Film and method for producing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |