CN113067553B - Electronic cooling modulation method and device for feedback type pulse linear amplification - Google Patents

Abstract

The invention relates to an electronic cooling modulation method and device for realizing feedback-type pulse linear amplification. The method comprises: an electronic cooling DC negative high-voltage module provides voltage for an electron gun load; a feedback voltage signal of the electron gun load is collected through a high-voltage divider; the feedback voltage signal The error signal is output by comparing with the set reference voltage; after the error signal is adjusted, the adjustment current that meets the driving requirements is output through power amplification, and the adjustment current flows to the fiber transmitters with different positive and negative high voltage pulses through the branch gate, so that the fiber transmits The device emits optical signals with changes in light intensity; the optical signals with changes in light intensity are converted into driving electrical signals through the optical detection circuit, and then drive the power devices in the high-voltage cascade circuit to achieve linear amplification of high-voltage pulses, and the output high-voltage pulses are used to cool the electronics. DC negative high voltage module. The present invention can be used as a transmission control mode for other high-voltage equipment.

Description

Electronic cooling modulation method and device for feedback type pulse linear amplification

technical field

The invention relates to an electronic cooling modulation method and device for realizing feedback type pulse linear amplification based on light detection, and relates to the field of nuclear technology and application.

Background technique

The heavy ion storage ring dual-electron composite experiment needs to rely on a modulated power supply to carry out. The main technical requirements are to achieve ripple less than 1*10 ^-4 , step size 1V, pulse width 20ms, frequency 5Hz, The rise time is less than 500us, and the final output is a square wave pulse of nearly 1000 volts. In the existing modulation power supply research and development technology, the high-voltage switching technology can be used to realize the linear amplification of high-voltage pulses, and the output voltage of the DC high-voltage power supply can be chopped by a given TTL control signal to obtain a linear high-voltage, but the pulse response time output by this method is limited. Limited to the output change rate of the DC power supply, and due to the fast chopping technology, the rising and falling edges of the final output pulse will have a large voltage overshoot.

At present, linear optocoupler components can also be used to realize linear transmission of control signals, and then high-voltage linear control can be realized on the high-voltage cascade loop composed of MOSFET tubes. However, relying on linear optocouplers to transmit control signals has obvious deficiencies in practical applications: 1 ) The transmission delay of the linear optocoupler is large, and it is not suitable for the occasions where the signal changes rapidly, so it is extremely difficult to realize the high-voltage pulse output with high slew rate; 2) The linear optocoupler with high linearity is expensive; 3) Linear The optocoupler element cannot completely isolate the strong and weak current equipment. In order to achieve the stability of signal transmission, usually the control signal line of the linear optocoupler transmission needs to be as short as possible. The isolation of strong and weak current can only rely on the isolation voltage of its own device. Electrical parameters and the use of sulfur hexafluoride gas in a sealed environment to reduce the contingency of high-voltage discharge. On the electronic cooling device, the sudden increase of high-voltage leakage current caused by the deviation of the electron beam from the orbit is a fault that occurs from time to time in the electronic cooling experiment, and its consequences It is the instantaneously changing energy that is likely to cause the optocoupler to be broken down, thereby destroying the weak current equipment.

SUMMARY OF THE INVENTION

In view of the above problems, the purpose of the present invention is to provide a kind of feedback type pulse linear amplification based on optical detection that can completely isolate the different circuits of strong and weak currents and avoid accidental discharge in the special environment of high-voltage pulses from causing damage to weak current equipment. Electronic cooling modulation method and device.

To achieve the above object, the present invention adopts the following technical solutions:

In a first aspect, the present invention provides an electronic cooling modulation method for realizing feedback-type pulse linear amplification, including:

The electronic cooling DC negative high voltage module provides voltage for the electron gun load;

Collect the feedback voltage signal of the electron gun load through the high voltage divider;

The feedback voltage signal and the set reference voltage are compared to output the error signal;

After the error signal is adjusted, the adjustment current that meets the driving requirements is output through power amplification, and the adjustment current flows to the optical fiber transmitters with different positive and negative high-voltage pulses respectively through the branch gate, so that the optical fiber transmitter emits optical signals with varying light intensity;

The optical signal of the light intensity change is converted into a driving electrical signal through the optical detection circuit, and then drives the power device in the high-voltage cascade circuit to realize the linear amplification of the high-voltage pulse, and the output high-voltage pulse is sent to the electronic cooling DC negative high-voltage module.

Further, the way of using the optical fiber transmitter to transmit the variable light intensity includes:

The error signal is adjusted by the PI controller and then output to the fiber optic transmitter; or the error signal is output PWM wave to the fiber optic transmitter through the PWM controller.

Further, the optical detection circuit includes a high-speed photodiode and a photodetection amplifier, the high-speed photodiode is used for photoelectric conversion of the received optical signal, and the photodetection amplifier pre-amplifies the weak current output by the photodiode as a driving signal.

In the second aspect, the present invention also provides an electronic cooling and modulation device for realizing feedback-type pulse linear amplification, the device includes an optical fiber transmitter, a light detection circuit, a high-voltage cascade circuit, an electronic cooling DC negative high-voltage module, an electron gun load, a high-voltage subdivision voltage regulators, comparator amplifiers, regulators and branch gating loops;

The optical signal output by the optical fiber transmitter with varying light intensity is transmitted to the optical detection circuit through the optical fiber, and the optical detection circuit converts the optical signal of varying light intensity into a driving electrical signal to drive the power device in the high-voltage cascade circuit to realize the linear amplification of the high-voltage pulse; the power device The output high-voltage pulse waveform is connected in series to the electron gun load through the electronic cooling DC negative high-voltage module; the high-voltage divider collects the voltage of the electron gun load as the feedback voltage of the system; the comparison amplifier outputs the comparison result to the regulator by comparing the set reference voltage and the feedback voltage ; The output adjustment value of the regulator is sent to the power amplifier and the branch gating circuit in turn, and the branch gating circuit outputs power amplification signals of different polarities and acts on the optical fiber transmitter to form a feedback system.

Further, the comparison amplifier includes an operational amplifier A1, an operational amplifier A2 and an operational amplifier A3; the forward and reverse differential signals of the reference signal are connected to the non-inverting input terminal and the reverse input terminal of the operational amplifier A1 through the resistor R1 and the resistor R2, and at the same time The forward and reverse differential signals of the feedback high-voltage signal are connected to the inverting input terminal and the non-inverting input terminal of the operational amplifier A2 through the resistor R3 and the resistor R4. The two signals output by the operational amplifier A1 and the operational amplifier A2 form a subtraction circuit through the resistor R5 and the resistor R6. Connect to the inverting input terminal of operational amplifier A3, the non-inverting input terminal of operational amplifier A3 is grounded, and the inverting input terminal of operational amplifier A3 is connected in parallel with the output terminal of resistor R7, which forms an inverse proportional amplifier circuit with resistors R5 and R6, and finally passes through Resistor R8 is output to the regulator.

Further, the regulator adopts a PI controller, and the error signal is adjusted by the PI controller and then output to the optical fiber transmitter; or the regulator adopts a PWM controller, and outputs PWM waves to the optical fiber transmitter.

Further, the power amplifier includes an operational amplifier A4, and the branch gating loop includes diodes D1 and D2;

The current output by the regulator is connected to the operational amplifier A4 through the resistor R9, and the operational amplifier A4 is output to the R15 potentiometer, and forms a voltage feedback structure through the resistor R11, and the branch is gated through the diodes D1 and D2. The positive and negative fiber transmitters provide quiescent current bias through V+ and R12 and V- and R13, and adjust the current to transmit the linear control signal through the fiber.

Further, the light detection circuit includes a high-speed photodiode and a light detection amplifier, and the light detection amplifier adopts an operational amplifier A5;

The light intensity emitted by the fiber optic transmitter is transmitted to the high-speed photodiode D3 through the fiber, and the negative voltage is provided by the voltage source U1 to provide a DC bias for the photodiode so that the photodiode can work under the reverse working voltage. The reverse input of the op amp A5 The output terminal and the output terminal are connected in parallel with the resistor R16 and the capacitor C1 to form a series circuit with the circuit R17 to stabilize the photoelectric transmission signal. The output resistor R18 and the output terminal parallel resistor R19 and capacitor C2 are used to set the passband and suppress the high frequency for the signal after photodetection. .

Further, the high-voltage cascading loop includes positive and negative electrode cascaded power device strings, the positive and negative high-voltage electrode cascaded power device strings each include 4 MOSFET tubes and a power triode, and the drain and gate of each MOSFET tube are connected in parallel. Voltage divider resistor and drive capacitor, series current limiting resistor; each MOSFET tube is connected in parallel with a bidirectional protection TVS tube between the gate and source; each MOSFET tube is connected in parallel with a unidirectional TVR device between the drain and source.

Further, the forward drive signal of the photodetection amplifier passes through the resistor R36 to the base of the transistor B1, and the TVS transistor D12 and the TVR device D01 effectively protect the transistor B1 from overvoltage breakdown; the collector of the transistor B1 is connected to the source of the MOSFET M4. The gate and source of the MOSFET M4 are connected in parallel with the TVS tube D7, and the drain and source of the MOSFET M4 are connected in parallel with the varistor R04. The TVR device effectively protects the MOSFET M4 from overvoltage breakdown, and the drain of the MOSFET M4 Connect the source stage of the MOSFET M3, connect the TVS tube D6 in parallel between the gate and source of the MOSFET M3, and connect the varistor R03 in parallel between the drain and source of the MOSFET M3. The TVR device effectively protects the MOSFET M3 from overvoltage breakdown; The drain of the MOSFET M3 is connected to the source of the MOSFET M2, the TVS tube D5 is connected in parallel between the gate and the source of the MOSFET M2, and the varistor R02 is connected in parallel between the drain and the source of the MOSFET M2. The TVR device effectively protects the MOSFET M2 from being damaged. It is broken down by overvoltage; the drain of MOSFET M2 is connected to the source of MOSFET M1, the TVS tube D4 is connected in parallel between the gate and source of MOSFET M1, the varistor R01 is connected in parallel between the drain and source of MOSFET M2, and the TVR device Effectively protect M1 from overvoltage breakdown; capacitor C3 and resistor R20 are connected in parallel between the drain and gate of MOSFET tube M1, and capacitor C4 and resistor R21, resistor R21 and R21 are connected in parallel between the gates of MOSFET tubes M1, M2, M3 and M4 respectively. Capacitor C5 and resistor R22, capacitor C6 and resistor R23, and the drain of MOSFET tube M1 are connected with a forward DC high voltage that meets the electrical requirements of M1, M2, M3, and M4 devices;

The negative drive signal of the photodetection amplifier passes through the resistor R37 to the base of the transistor B2, the TVS transistor D13 and the TVS device D02 effectively protect the transistor B2 from overvoltage breakdown; the collector of the transistor B2 is connected to the source of the MOSFET M8, the MOSFET The TVS tube D11 is connected in parallel between the gate and source of the tube M8, and the R08 varistor is connected in parallel between the drain and the source. The TVR device effectively protects the MOSFET tube M8 from overvoltage breakdown; the drain of the MOSFET tube M8 is connected to the source stage of the MOSFET tube M7. The TVS tube D10 is connected in parallel between the gate and source of the MOSFET tube M7, and the varistor R07 is connected in parallel between the drain and source electrodes. The TVR device effectively protects the MOSFET tube M7 from overvoltage breakdown; the drain of the MOSFET tube M7 is connected to the MOSFET tube M6. The source stage, the TVS tube D9 is connected in parallel between the gate and the source of the MOSFET tube M6, and the varistor R06 is connected in parallel between the drain and source electrodes. The TVR device effectively protects the MOSFET tube M6 from overvoltage breakdown; the drain of the MOSFET tube M6 is connected to the MOSFET The source stage of the tube M5, the TVS tube D8 is connected in parallel between the gate and the source of the MOSFET tube M5, and the varistor R05 is connected in parallel between the drain and the source. The TVR device effectively protects the MOSFET tube M5 from overvoltage breakdown; A capacitor C7 and a resistor R24 are connected in parallel between the drain and the gate, and a capacitor C8 and a resistor R25, a capacitor C9 and a resistor R26, a capacitor C10 and a resistor R27 are connected in parallel between the gates of the MOSFET tubes M5, M6, M7 and M8, respectively. A negative DC high voltage that meets the electrical requirements of the MOSFET transistors M5, M6, M7, and M8 is connected to the emitter of B2.

The present invention has the following advantages due to taking the above technical solutions:

1. The present invention uses the optical fiber transmitter and the optical detection circuit as an isolation method for signal transmission between strong and weak electricity, and as long as the length of the optical fiber is within the acceptable range of the attenuation index of the optical fiber transmission line, accidental discharge in the special environment of high-voltage pulses can be avoided. Damage to weak current equipment, and the use of optical signals can effectively block electromagnetic interference during signal transmission; compared with traditional expensive linear optocouplers, it can completely isolate high and low voltage environments, effectively protecting weak current equipment from accidental high voltage discharges. damage;

2. In the present invention, the electronic cooling high-voltage system and the output of the high-voltage pulse amplifier are used as a feedback loop through a high-precision high-voltage voltage divider, which can control the electronic cooling DC high voltage and modulate the high voltage at the same time, and can realize the dual-electronic compound experiment on the DC high voltage The precise pulse step required;

3. The high-voltage voltage divider of the present invention uses a temperature controller to control the cold end of the ceramic temperature controller fixed on the heat-conducting material, so as to realize the first voltage divider embedded in the heat-conducting material and the surrounding space of the operational amplifier drive output circuit The temperature is kept constant, and the temperature change control of ±0.1℃ can be achieved, which greatly reduces the influence of temperature change on the voltage division accuracy. The stable voltage division voltage is given by accurate feedback from 100uV to several hundreds of mV, so as to realize the DC modulation pulse high voltage The high-voltage voltage divider of the present invention adopts a resistance dividing structure, which can reduce the influence of the distributed capacitance on the DC modulation pulse waveform; The impedance-driven op amp can reduce the influence of the signal transmission process on the voltage divider resistance, and drive the voltage divider to output accurately;

In conclusion, the present invention can be used as a transmission control method for other high-voltage equipment.

Description of drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are for the purpose of illustrating preferred embodiments only and are not to be considered limiting of the invention. The same reference numerals are used to refer to the same parts throughout the drawings. In the attached image:

1 is an overall structural diagram of an embodiment of the present invention;

2 is a schematic diagram of a signal comparison amplifying circuit according to an embodiment of the present invention;

3 is a schematic diagram of a PWM control light intensity according to an embodiment of the present invention;

4 is a schematic diagram of a power amplifying and optical fiber transmitting loop according to an embodiment of the present invention;

5 is a schematic diagram of a light detection circuit according to an embodiment of the present invention;

6 is a schematic diagram of a cascaded series of positive and negative high-voltage electrodes according to an embodiment of the present invention;

7 is a schematic diagram of the overall structure of a high-voltage divider according to an embodiment of the present invention;

8 is a schematic diagram of the overall structure of another high-voltage voltage divider according to an embodiment of the present invention;

9 is a schematic diagram of a control principle of a PWM temperature controller according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of the electronic cooling DC modulation pulse waveform acting on the high voltage divider of the present invention and the voltage divider output of the high voltage divider according to an embodiment of the present invention.

Detailed ways

Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present invention will be more thoroughly understood, and will fully convey the scope of the present invention to those skilled in the art.

It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" can also be intended to include the plural forms unless the context clearly dictates otherwise. The terms "comprising", "comprising", "containing" and "having" are inclusive and thus indicate the presence of stated features, steps, operations, elements and/or components, but do not preclude the presence or addition of one or Various other features, steps, operations, elements, components, and/or combinations thereof. Method steps, procedures, and operations described herein are not to be construed as requiring that they be performed in the particular order described or illustrated, unless an order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.

Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be restricted by these terms. These terms may only be used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of example embodiments.

For ease of description, spatially relative terms may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figures, such as "inner", "outer", "inner" ", "outside", "below", "above", etc. This spatially relative term is intended to include different orientations of the device in use or operation other than the orientation depicted in the figures.

The invention provides an electronic cooling modulation method and device for realizing feedback type pulse linear amplification. Set the reference voltage and output the error signal by comparison; after the error signal is adjusted, the adjusted current that meets the driving requirements is output through power amplification, and the adjusted current flows to the fiber transmitters with different positive and negative high voltage pulses through the branch gate, so that the fiber transmitter The optical signal with changing light intensity is emitted; the light signal with changing light intensity is converted into a driving electrical signal through the light detection circuit, and then drives the power device in the high-voltage cascade circuit to realize the linear amplification of the high-voltage pulse, and the output high-voltage pulse is sent to the electronic cooling DC Negative high voltage module. The invention uses the optical fiber transmitter and the optical detection circuit as the isolation mode of signal transmission between the strong and weak electricity, and as long as the length of the optical fiber is within the acceptable range of the attenuation index of the optical fiber transmission line, the accidental discharge in the special environment of the high-voltage pulse is avoided to the weak electricity. damage to the equipment.

Example 1

In the high-voltage pulse amplification system, parasitic parameters such as parasitic capacitance and parasitic inductance inevitably exist in the transmission cable and the load end, which lead to the decrease of the stability of the output waveform and the generation of high ripple. In order to ensure the stable output of the waveform of the modulation system on the electronic cooling high voltage , the system is closed-loop controlled, and the voltage division value of the high-voltage voltage divider is used as the feedback voltage to generate an error signal compared with the given voltage. The accuracy of the feedback voltage determines the quality of the final output voltage. Therefore, in order to obtain a high-quality output waveform as much as possible, it is very important to use a high-precision high-voltage divider as a closed-loop, and the accuracy of the electronically cooled high-voltage divider should be less than 10ppm, because: for example, the electronic cooling DC high-voltage output is 20000V, It is necessary to add a 1V pulse to 20000V, then the voltage on the voltage divider with a voltage divider of 1:10000 is 2.0001, but to be accurate at the end of the decimal, one more precision must be added, that is, the voltage divider needs to be able to accurately divide the voltage. 2.00010, so the required accuracy is less than 0.00001 or 10ppm.

Based on the above principles, as shown in FIG. 1 , an electronic cooling modulation device for realizing feedback-type pulse linear amplification based on optical detection provided by an embodiment of the present invention includes an optical fiber transmitter, an optical detection circuit, a high-voltage cascaded circuit, and an electronic cooling DC negative high voltage. Modules, electron gun loads, high voltage dividers, comparator amplifiers, power amplifiers, regulators and branch gating loops, wherein the high voltage cascade loop includes a high voltage positive and negative pole cascaded power device string.

The optical fiber transmitter is controlled by the front-stage signal processing circuit, and the optical fiber transmitter outputs the optical signal of varying light intensity and transmits it to the optical detection circuit through the optical fiber;

The light detection circuit converts the light signal of changing light intensity into a changing driving electrical signal to drive the power devices in the positive and negative high voltage electrode cascade series to realize the linear amplification of the high voltage pulse;

The high-voltage pulse waveform output by the power device is output to the electronic cooling DC negative high-voltage module to provide voltage for the electron gun load;

The high voltage divider collects the voltage of the electron gun load as the feedback voltage of the system;

The comparison amplifier, by comparing the given reference voltage and the feedback voltage, outputs the comparison result to the regulator;

The output adjustment value of the regulator is sent to the power amplifier and the branch gating circuit in turn, and the power amplifier outputs the adjustment current value that meets the driving requirements of the power device;

The branch gating loop outputs power amplification signals of different polarities and acts on the fiber transmitters with different positive and negative high-voltage pulses to form an overall feedback system.

In some embodiments of the present invention, such as the non-limiting embodiment shown in FIG. 2 , the comparison amplifier includes an operational amplifier A1, an operational amplifier A2, and an operational amplifier A3. The specific implementation process is: the positive and negative of a given reference differential signal V_ref The differential signal is connected to the non-inverting input terminal and the reverse input terminal of the operational amplifier A1 through resistors R1 and R2 with equal resistance values, and the forward and reverse differential signals of the feedback high-voltage signal V_feed are connected through resistors R3 and R4 with equal resistance values. Op amp A2 is the reverse input terminal and the same-direction input terminal. Op amp A1 and op amp A2 can suppress high-frequency bandwidth interference and linear harmonics. The two signals output by op amp A1 and op amp A2 pass through resistor R5 with the same resistance value. and resistor R6 to form a subtraction circuit connected to the inverting input terminal of the operational amplifier A3, the non-inverting input terminal of the operational amplifier A3 is grounded, the inverting input terminal of the operational amplifier A3 is connected to the output terminal in parallel with the resistor R7, and the resistors R5 and R5 with the same resistance value are connected to the ground. R6 constitutes an inverse proportional amplifier circuit, which is finally output to the regulator through resistor R8.

In some embodiments of the present invention, the embodiments of the present invention provide two ways of using the optical fiber transmitter to transmit the variable light intensity signal, one is to adjust the PI of the error signal, and the other is to change the duty cycle at a specific frequency. than the PWM wave. In some implementations, the regulator may use a PI controller. The regulator uses a PI controller to output an error signal, transmit an error current, and directly act on the optical fiber transmitter to achieve linear transmission of signals in a strong and weak current environment. In other implementations, the regulator can use a PWM controller. The regulator uses a PWM controller to output PWM waves to the fiber optic transmitter, and uses the voltage duty cycle that changes at a specific frequency to linearly control the light intensity of the fiber optic transmitter, thereby transmitting weak current. control signal. As a non-limiting example, further, as shown in FIG. 3 , the specific implementation of PWM control of light intensity is: when a control signal is provided for the optical fiber, in a square wave train with a certain frequency, the macro pulse width of the square wave mainly controls the high voltage The pulse width of the pulse, and the duty cycle of the square wave can control the light intensity emitted by the fiber, and finally realize the linear amplification of the high-voltage pulse amplitude.

In some embodiments of the present invention, such as the non-limiting embodiment shown in FIG. 4 , the power amplifier includes an operational amplifier A4, and the branch gating circuit includes diodes D1 and D2. The specific implementation process of the power amplifier and the branch gating circuit It is: the current output by the regulator is connected to the operational amplifier A4 through the resistor R9, and the operational amplifier A4 is output to the R15 potentiometer (for fine-tuning of the deviation of the two branches), and forms a voltage feedback structure through the resistor R11, and is supported by the diodes D1 and D2. The channel is gated, and the quiescent current bias is provided through V+ and R12 and V- and R13 on the output of diodes D1 and D2 to the positive and negative fiber transmitters, and the current is adjusted to transmit the linear control signal through the fiber.

In some embodiments of the present invention, the photodetection circuit includes a high-speed photodiode (high-speed refers to a nanosecond-ns slew rate) and a photodetection amplifier. The photodetection circuit needs to provide a negative voltage bias to the photodiode, and provide a negative voltage bias to the photodiode. The weak current output by the diode can be used as a useful driving signal after pre-amplification. As shown in the non-limiting embodiment shown in FIG. 5 , the specific implementation process of the light detection circuit is as follows:

The light intensity emitted by the fiber optic transmitter is transmitted to the high-speed photodiode D3 through the fiber, and the negative voltage is provided by the voltage source U1 to provide a DC bias for the photodiode, so that the photodiode can work under the reverse working voltage. The optical detection amplifier includes an operational amplifier A5 , output the driving signal that can meet the normal operation of the triode. Among them, the inverse input end and output end of the op amp A5 are connected in series with the resistor R16 and the capacitor C1, and then the circuit R17 is connected in series to stabilize the photoelectric transmission signal. Finally, the output resistor R18 and the output end are used. The parallel resistor R19 and capacitor C2 perform passband setting and high frequency suppression for the photodetected signal.

In some embodiments of the present invention, the high-voltage cascade loop includes positive and negative electrode cascaded power device strings, and the positive and negative high-voltage electrode cascaded power device strings each include 4 MOSFETs and a power triode. The drain of each MOSFET and the A voltage dividing resistor and a drive capacitor are connected in parallel between the gates, and a current limiting resistor is connected in series; each MOSFET is connected in parallel with a bidirectional protection TVS tube between the gate and the source; each MOSFET is connected in parallel between the drain and the source. TVR devices.

As shown in the non-limiting embodiment shown in Figure 6, the specific implementation of the high-voltage cascade loop is:

The forward drive signal of the photodetection amplifier passes through the resistor R36 to the base of the transistor B1, the TVS transistor D12 and the TVR device D01 effectively protect the transistor B1 from overvoltage breakdown; the collector of the transistor B1 is connected to the source of the MOSFET M4, the MOSFET The TVS tube D7 is connected in parallel between the gate and source of the tube M4, and the varistor R04 is connected in parallel between the drain and source of the MOSFET tube M4. The TVR device effectively protects the MOSFET tube M4 from overvoltage breakdown, and the drain of the MOSFET tube M4 is connected to the MOSFET tube. The source stage of M3, the TVS tube D6 is connected in parallel between the gate and source of the MOSFET tube M3, and the varistor R03 is connected in parallel between the drain and source electrodes of the MOSFET tube M3. The TVR device effectively protects the MOSFET tube M3 from over-voltage breakdown; the MOSFET tube M3 The drain of the MOSFET is connected to the source of the MOSFET M2, the TVS tube D5 is connected in parallel between the gate and the source of the MOSFET M2, and the varistor R02 is connected in parallel between the drain and the source of the MOSFET M2. The TVR device effectively protects the MOSFET M2 from overvoltage. Breakdown; the drain of MOSFET M2 is connected to the source of MOSFET M1, the gate and source of MOSFET M1 are connected in parallel with TVS tube D4, the drain and source of MOSFET M2 are connected in parallel with varistor R01, and the TVR device effectively protects M1 No breakdown by overvoltage. A capacitor C3 and a resistor R20 are connected in parallel between the drain and the gate of the MOSFET tube M1, and a capacitor C4 and a resistor R21, a capacitor C5 and a resistor R22, a capacitor C6 and a resistor are connected in parallel between the gates of the MOSFET tubes M1, M2, M3 and M4 respectively. R23, among them, capacitors C3, C4, C5, and C6 provide fast dynamic response of FET for MOSFET tubes M1, M2, M3, and M4, and resistors R20, R21, R22, and R23 ensure the distribution of MOSFET tubes M1, M2, M3, and M4. The voltage is the same and constitutes the DC coupling operating point of each MOSFET tube. The drain of the MOSFET tube M1 is connected to the forward DC high voltage Pos_HV that meets the electrical requirements of the M1, M2, M3, and M4 devices;

The negative drive signal of the photodetection amplifier passes through the resistor R37 to the base of the transistor B2, the TVS transistor D13 and the TVS device D02 effectively protect the transistor B2 from overvoltage breakdown; the collector of the transistor B2 is connected to the source of the MOSFET M8, the MOSFET The TVS tube D11 is connected in parallel between the gate and source of the tube M8, and the R08 varistor is connected in parallel between the drain and the source. The TVR device effectively protects the MOSFET tube M8 from overvoltage breakdown; the drain of the MOSFET tube M8 is connected to the source stage of the MOSFET tube M7. The TVS tube D10 is connected in parallel between the gate and source of the MOSFET tube M7, and the varistor R07 is connected in parallel between the drain and source electrodes. The TVR device effectively protects the MOSFET tube M7 from overvoltage breakdown; the drain of the MOSFET tube M7 is connected to the MOSFET tube M6. The source stage, the TVS tube D9 is connected in parallel between the gate and the source of the MOSFET tube M6, and the varistor R06 is connected in parallel between the drain and source electrodes. The TVR device effectively protects the MOSFET tube M6 from overvoltage breakdown; the drain of the MOSFET tube M6 is connected to the MOSFET The source stage of the tube M5, the TVS tube D8 is connected in parallel between the gate and the source of the MOSFET tube M5, and the varistor R05 is connected in parallel between the drain and the source. The TVR device effectively protects the MOSFET tube M5 from overvoltage breakdown; A capacitor C7 and a resistor R24 are connected in parallel between the drain and the gate, and a capacitor C8 and a resistor R25, a capacitor C9 and a resistor R26, a capacitor C10 and a resistor R27 are connected in parallel between the gates of the MOSFET transistors M5, M6, M7 and M8, respectively. , Capacitors C7, C8, C9, C10 provide FET fast dynamic response for MOSFET tubes M5, M6, M7, M8, resistors R24, R25, R26, R27 ensure that the voltage divisions on MOSFET tubes M5, M6, M7, M8 are consistent and The DC coupling operating point of each MOSFET tube is constituted, and the negative DC high voltage Neg_HV that meets the electrical requirements of the MOSFET tubes M5, M6, M7, and M8 devices is connected to the emitter of the transistor B2.

In some embodiments of the present invention, such as the non-limiting embodiments shown in FIGS. 7 to 10 , to achieve high-stability high-voltage output, it is necessary to use a high-precision voltage divider as a given feedback signal, and the high-voltage divider can Adopt electronic cooling DC modulation pulse high voltage voltage divider, including thermal conductive material 1, first voltage dividing resistor 2, second voltage dividing resistor 3, operational amplifier drive output circuit 4, voltage equalizing resistor circuit 5, temperature sensor 6, ceramic temperature control 7 and temperature controller 8. The thermally conductive material 1 is embedded with a first voltage dividing resistor 2 and an operational amplifier drive output circuit 4. The first voltage dividing resistor 2 is connected to the electron gun load through a second voltage dividing resistor 3, and the first voltage dividing resistor 2 is also connected to the operational amplifier drive output. The input terminal of the loop 4, the first voltage dividing resistor 2, the second voltage dividing resistor 3 and the operational amplifier drive output circuit 4 are all used to divide the voltage of the DC modulation pulse high voltage of the electronic cooling DC high voltage terminal, and the operational amplifier drives the output circuit 4. The output end is connected to an external ADC acquisition circuit, so that the obtained divided voltage is used as a given feedback voltage. One end of the voltage equalizing resistor circuit 5 is connected in parallel with the high voltage end of the electronic cooling DC high voltage and the high voltage arm of the second voltage dividing resistor 3. The other end of the voltage equalizing resistor circuit 5 is grounded, and the voltage equalizing resistor circuit 5 is used for the DC modulation of the high voltage terminal of the electronic cooling DC. Pulsed high voltage is used for protection and voltage equalization, providing equipotential shielding to avoid tip discharge caused by uneven electric field. A temperature sensor 6 and a ceramic temperature controller 7 are fixedly arranged on the thermally conductive material 1, and the temperature controller 8 is respectively connected to the temperature sensor 6 and the ceramic temperature controller 7. The temperature sensor 6 is used to collect the temperature of the thermally conductive material 1, and the temperature controller 8 is used to According to the temperature collected by the temperature sensor 6, the temperature change of the thermally conductive material 1 is controlled by the ceramic temperature controller 7 within the range of ±0.1°C, so that the first voltage divider 2 embedded in the thermally conductive material 1 and the operational amplifier drive output circuit 4 The temperature of the surrounding space remains constant. In other implementations, the hot end of the ceramic temperature controller 7 is connected to the heat-conducting base plate of the electronic cooling high-voltage device, and the cold end of the ceramic temperature controller 7 is connected to the heat-conducting material 1 . The operational amplifier drive output loop 4 can use an inverse proportional operational amplifier circuit, including a first operational amplifier 41, a third voltage dividing resistor 42, a first capacitor 43 and a first resistor 44, wherein the resistance value of the first resistor 44 is 100 . The non-inverting input terminal of the first operational amplifier 41 is directly grounded, and the inverting input terminal of the first operational amplifier 41 is connected in parallel with one end of the first voltage dividing resistor 2, the third voltage dividing resistor 42 and the first capacitor 43. The first operational amplifier The output end of 41 is connected in parallel with the other end of the third voltage dividing resistor 42 and the first capacitor 43 and one end of the first resistor 44, and the other end of the first resistor 44 is connected with the external comparator amplifier. In some implementations, the operational amplifier drive output loop 4 may use a proportional operational amplifier circuit in the same direction, including a second operational amplifier 45 , a fourth voltage dividing resistor 46 , a second capacitor 47 and a second resistor 48 , wherein the value of the second resistor 48 is The resistance value is 100. The non-inverting input terminal of the second operational amplifier 45 is connected in parallel with one end of the first voltage dividing resistor 2 and the second voltage dividing resistor 3 , the other end of the first voltage dividing resistor 2 is grounded, and the inverting input terminal of the second operational amplifier 45 is connected in parallel One end of the first voltage dividing resistor 2, the fourth voltage dividing resistor 46 and the second capacitor 47 are connected, and the output end of the second operational amplifier 45 is connected in parallel with the other end of the fourth voltage dividing resistor 46 and the second capacitor 47 and the second resistor One end of 48, and the other end of the second resistor 48 is connected to an external comparator amplifier. In other implementations, the temperature controller 8 can use a PWM temperature control chip. The specific implementation process of the PWM temperature control chip is as follows: the temperature sensor 6 sends the TC signal value to the same-direction input end of the third operational amplifier A1 due to the temperature change; The potentiometer R3 sets the working temperature point of the temperature sensor 6 and sends it to the inverting input terminal of the third operational amplifier A1. The output terminal of the third operational amplifier A1 is connected to the IN+ terminal of the PWM temperature control chip, and transmits the error signal to the PWM temperature Control chip; the TTL1 end of the PWM temperature control chip is given the drive signal of the first PNP transistor Q1 and the first NPN transistor Q2, and the TTL2 end of the PWM temperature control chip is given the drive signal of the second NPN transistor Q3 and the second PNP transistor Q4; A PNP transistor Q1 and a first NPN transistor Q2 are both connected to the control terminal of the ceramic temperature controller 7 through a first inductor L1, and both the second NPN transistor Q3 and the second PNP transistor Q4 are connected to the ceramic temperature controller 7 through a second inductor L2. At the control end, the PWM wave formed inside the PWM temperature control chip applies the PWM signal to the control end of the ceramic temperature controller 7 through the first inductor L1 and the second inductor L2. The voltage equalizing resistor circuit 5 includes five 100M voltage equalizing resistors 51 connected in series.

To sum up, in the embodiment of the present invention, the optical fiber transmitter and the photodiode are used to transmit the high-voltage pulse control signal, which can completely isolate the different circuits of strong and weak electricity, so as to avoid accidental discharge in the special environment of the high-voltage pulse from causing damage to the weak electricity equipment. , and the use of optical signals can effectively block the electromagnetic interference received during the signal transmission process.

Example 2

Embodiments of the present invention also provide an electronic cooling modulation method for realizing feedback-type pulse linear amplification based on light detection, including the following contents:

The high-voltage pulse is linearly amplified and output to the electronic cooling DC negative high-voltage module to provide voltage for the electron gun load, and the feedback divided voltage signal is collected through the high-voltage voltage divider;

The divided voltage signal and the given reference voltage output the error signal through the comparison amplifier;

The error signal outputs the adjustment signal through the regulator;

The regulation signal outputs the regulation current value that meets the driving requirements of the power device through power amplification;

Adjust the current to flow to the optical fiber transmitters with different positive and negative high-voltage pulses respectively through the branch gating circuit, so that the optical fiber transmitter emits optical signals with varying light intensity;

Through the transmission of the optical fiber, the light signal of varying light intensity is converted into a driving electrical signal in the light detection circuit composed of a high-speed photodiode and a light detection amplifier, and then drives the power devices in the positive and negative high voltage electrode cascade to realize the linear amplification of the high voltage pulse.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or some technical features thereof are equivalently replaced, and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (8)

1. an electronic cooling modulation method for realizing feedback type pulse linear amplification, is characterized in that comprising: The electronic cooling DC negative high voltage module provides voltage for the electron gun load; Collect the feedback voltage signal of the electron gun load through the high voltage divider; The feedback voltage signal and the set reference voltage are compared to output the error signal; After the error signal is adjusted, the adjustment current that meets the driving requirements is output through power amplification, and the adjustment current flows to the optical fiber transmitters with different positive and negative high-voltage pulses respectively through the branch gate, so that the optical fiber transmitter emits optical signals with varying light intensity; The optical signal of the light intensity change is converted into a driving electrical signal through the optical detection circuit, and then drives the power device in the high-voltage cascade circuit to realize the linear amplification of the high-voltage pulse, and the output high-voltage pulse is sent to the electronic cooling DC negative high-voltage module. The circuit includes a high-speed photodiode and a photodetection amplifier, the high-speed photodiode is used to photoelectrically convert the received optical signal, and the photodetection amplifier pre-amplifies the weak current output by the photodiode as a driving signal. 2. The electronic cooling modulation method according to claim 1, wherein the method of utilizing the optical fiber transmitter to emit varying light intensity comprises: The error signal is adjusted by the PI controller and then output to the fiber optic transmitter; or the error signal is output PWM wave to the fiber optic transmitter through the PWM controller. 3. An electronic cooling modulation device for realizing feedback-type pulse linear amplification, characterized in that the device comprises an optical fiber transmitter, a light detection loop, a high-voltage cascade loop, an electronic cooling DC negative high-voltage module, an electron gun load, and a high-voltage voltage divider , comparator amplifiers, regulators and branch gating loops; The optical signal output by the optical fiber transmitter with varying light intensity is transmitted to the optical detection circuit through the optical fiber, and the optical detection circuit converts the optical signal of varying light intensity into a driving electrical signal to drive the power device in the high-voltage cascade circuit to realize the linear amplification of the high-voltage pulse; the power device The output high-voltage pulse waveform is connected in series to the electron gun load through the electronic cooling DC negative high-voltage module; the high-voltage divider collects the voltage of the electron gun load as the feedback voltage of the system; the comparison amplifier outputs the comparison result to the regulator by comparing the set reference voltage and the feedback voltage ; The output adjustment value of the regulator is sent to the power amplifier and the branch gating circuit in turn, and the branch gating circuit outputs power amplification signals of different polarities and acts on the optical fiber transmitter to form a feedback system; The light detection circuit includes a high-speed photodiode D3 and a light detection amplifier, and the light detection amplifier adopts an operational amplifier A5; The light intensity emitted by the fiber optic transmitter is transmitted to the high-speed photodiode D3 through the fiber, and the negative voltage is provided by the voltage source U1 to provide a DC bias for the photodiode so that the photodiode can work under the reverse working voltage. The reverse input of the op amp A5 The terminal and the output terminal are connected in parallel with the resistor R16 and the capacitor C1 to form a series circuit with the resistor R17 to stabilize the photoelectric transmission signal. The output resistor R18 and the output terminal parallel resistor R19 and capacitor C2 are used to set the passband and suppress the high frequency for the signal after photodetection. . 4. The electronic cooling modulation device according to claim 3, wherein the comparison amplifier comprises an operational amplifier A1, an operational amplifier A2 and an operational amplifier A3; the forward and reverse differential signals of the reference signal are connected through a resistor R1 and a resistor R2 The non-inverting input terminal and the inverting input terminal of the operational amplifier A1, and the positive and negative differential signals of the feedback high-voltage signal are connected to the inverting input terminal and the non-inverting input terminal of the operational amplifier A2 through the resistor R3 and the resistor R4. The two signals output by amplifier A2 are connected to the reverse input terminal of operational amplifier A3 through a subtraction circuit formed by resistor R5 and resistor R6. , together with resistors R5 and R6 to form an inverse proportional amplifier circuit, and finally output to the regulator through resistor R8. 5. The electronic cooling modulation device according to claim 3, wherein the regulator adopts a PI controller, and the error signal is adjusted by the PI controller and then output to the optical fiber transmitter; or the regulator adopts a PWM controller , output the PWM wave to the fiber transmitter. 6. The electronic cooling modulation device according to claim 3, wherein the power amplifier comprises an operational amplifier A4, and the branch gating loop comprises diodes D1 and D2; The current output by the regulator is connected to the operational amplifier A4 through the resistor R9, and the operational amplifier A4 is output to the R15 potentiometer, and forms a voltage feedback structure through the resistor R11, and the branch is gated through the diodes D1 and D2. The positive and negative fiber transmitters provide quiescent current bias through V+ and R12 and V- and R13, and adjust the current to transmit the linear control signal through the fiber. 7 . The electronic cooling modulation device according to claim 3 , wherein the high-voltage cascade loop comprises positive and negative electrode cascaded power device strings, and the positive and negative high-voltage electrode cascaded power device strings each comprise 4 MOSFET tubes and a power device. 8 . A triode, a voltage divider resistor and a drive capacitor are connected in parallel between the drain and gate of each MOSFET, and a current limiting resistor is connected in series; each MOSFET is connected in parallel with a bidirectional protection TVS tube between the gate and the source; each MOSFET is in A unidirectional TVR device is connected in parallel between the drain and source stages. 8. The electronic cooling modulation device according to claim 7, wherein the forward drive signal of the photodetection amplifier passes through the resistor R36 to the base of the transistor B1, and the TVS transistor D12 and the TVR device D01 effectively protect the transistor B1 from being over-passed. Voltage breakdown; the collector of the transistor B1 is connected to the source of the MOSFET M4, the TVS tube D7 is connected in parallel between the gate and the source of the MOSFET M4, and the varistor R04 is connected in parallel between the drain and the source of the MOSFET M4, and the TVR device effectively protects the MOSFET The tube M4 is not broken down by overvoltage, the drain of the MOSFET tube M4 is connected to the source of the MOSFET tube M3, the TVS tube D6 is connected in parallel between the gate and the source of the MOSFET tube M3, and the varistor R03 is connected in parallel between the drain and the source of the MOSFET tube M3. , the TVR device effectively protects the MOSFET M3 from overvoltage breakdown; the drain of the MOSFET M3 is connected to the source of the MOSFET M2, the gate and the source of the MOSFET M2 are connected in parallel with the TVS tube D5, and the drain and the source of the MOSFET M2 are connected in parallel. The varistor R02 is connected in parallel, and the TVR device effectively protects the MOSFET M2 from overvoltage breakdown; the drain of the MOSFET M2 is connected to the source of the MOSFET M1, and the gate and the source of the MOSFET M1 are connected in parallel with the TVS tube D4, MOSFET The varistor R01 is connected in parallel between the drain and source of the tube M2, and the TVR device effectively protects M1 from overvoltage breakdown; the capacitor C3 and the resistor R20 are connected in parallel between the drain and the gate of the MOSFET tube M1, and the MOSFET tubes M1, M2, The gates of M3 and M4 are connected in parallel with capacitor C4 and resistor R21, capacitor C5 and resistor R22, capacitor C6 and resistor R23, respectively. The drain of MOSFET M1 is connected to a positive voltage that meets the electrical requirements of M1, M2, M3, and M4 devices. to DC high voltage; The negative drive signal of the photodetection amplifier passes through the resistor R37 to the base of the transistor B2, the TVS transistor D13 and the TVS device D02 effectively protect the transistor B2 from overvoltage breakdown; the collector of the transistor B2 is connected to the source of the MOSFET M8, the MOSFET The TVS tube D11 is connected in parallel between the gate and source of the tube M8, and the R08 varistor is connected in parallel between the drain and the source. The TVR device effectively protects the MOSFET tube M8 from overvoltage breakdown; the drain of the MOSFET tube M8 is connected to the source stage of the MOSFET tube M7. The TVS tube D10 is connected in parallel between the gate and source of the MOSFET tube M7, and the varistor R07 is connected in parallel between the drain and source electrodes. The TVR device effectively protects the MOSFET tube M7 from overvoltage breakdown; the drain of the MOSFET tube M7 is connected to the MOSFET tube M6. The source stage, the TVS tube D9 is connected in parallel between the gate and the source of the MOSFET tube M6, and the varistor R06 is connected in parallel between the drain and source electrodes. The TVR device effectively protects the MOSFET tube M6 from overvoltage breakdown; the drain of the MOSFET tube M6 is connected to the MOSFET The source stage of the tube M5, the TVS tube D8 is connected in parallel between the gate and the source of the MOSFET tube M5, and the varistor R05 is connected in parallel between the drain and the source. The TVR device effectively protects the MOSFET tube M5 from overvoltage breakdown; A capacitor C7 and a resistor R24 are connected in parallel between the drain and the gate, and a capacitor C8 and a resistor R25, a capacitor C9 and a resistor R26, a capacitor C10 and a resistor R27 are connected in parallel between the gates of the MOSFET tubes M5, M6, M7 and M8, respectively. A negative DC high voltage that meets the electrical requirements of the MOSFET transistors M5, M6, M7, and M8 is connected to the emitter of B2.

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