CN113064225B - Antireflection film system containing magnesium fluoride film layer and preparation method thereof - Google Patents
Antireflection film system containing magnesium fluoride film layer and preparation method thereof Download PDFInfo
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- CN113064225B CN113064225B CN202110316285.XA CN202110316285A CN113064225B CN 113064225 B CN113064225 B CN 113064225B CN 202110316285 A CN202110316285 A CN 202110316285A CN 113064225 B CN113064225 B CN 113064225B
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 title claims abstract description 60
- 229910001635 magnesium fluoride Inorganic materials 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000007704 transition Effects 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims description 48
- 238000000576 coating method Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 25
- 238000002834 transmittance Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 101150059062 apln gene Proteins 0.000 claims description 3
- 239000010408 film Substances 0.000 description 244
- 238000002310 reflectometry Methods 0.000 description 19
- 238000003384 imaging method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 102200029613 rs35593767 Human genes 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
The invention provides an antireflection film system containing a magnesium fluoride film layer and a preparation method thereof. The antireflection film system of the magnesium fluoride-containing film layer comprises: a base layer; a plurality of first film layers; the refractive index of the first film layer is larger than that of the second film layer, at least one second film layer in the first film layers and the second film layers is alternately overlapped to form a transition layer, the transition layer is connected with the substrate layer, and one side of the transition layer far away from the substrate layer is the first film layer; the magnesium fluoride film layer is connected to one side of the transition layer far away from the basal layer, and one side surface of the magnesium fluoride film layer far away from the transition layer is connected with at least one other second film layer in the plurality of second film layers. The invention solves the problem of weak adhesion of the magnesium fluoride film in the prior art.
Description
Technical Field
The invention relates to the technical field of optical element coating equipment, in particular to an antireflection film system containing a magnesium fluoride film layer and a preparation method thereof.
Background
With the development of mobile phone lens technology, the requirements of people on the optical performance of lenses are also higher. At present, the mobile phone lens is plated with an antireflection film system, and the film system structure is TiO 2 And SiO 2 Alternatively, the reflectivity achieved by such a film system has not been able to meet the requirements of people for mobile phone lenses, and the reflectivity of the edge and the central area of a lens with a certain curvature is different when the lens is coated in a PVD coating device, so that the edge reflectivity is further improved, and a plurality of bad ghosts are generated on the lens. Therefore, it is necessary to further reduce the reflectance of the lens.
MgF 2 Is a commonly used low refractive index material in the field of optical films, and has a refractive index lower than that of SiO 2 The reflectivity of the anti-reflection film plated by the material is further reduced.But on the resin lens, mgF plated by the conventional process is used 2 The problem of low reliability or weak film layer can occur. Therefore, the MgF content is improved by the film system design and the process design 2 The reliability problem of the film layer has stronger application value.
That is, the magnesium fluoride film layer in the prior art has the problem of weak adhesion.
Disclosure of Invention
The invention mainly aims to provide an antireflection film system containing a magnesium fluoride film layer and a preparation method thereof, so as to solve the problem of weak adhesion of the magnesium fluoride film layer in the prior art.
In order to achieve the above object, according to one aspect of the present invention, there is provided an antireflection film system including a magnesium fluoride-containing film layer, comprising: a base layer; a plurality of first film layers; the refractive index of the first film layer is larger than that of the second film layer, at least one second film layer in the first film layers and the second film layers is alternately overlapped to form a transition layer, the transition layer is connected with the substrate layer, and one side of the transition layer far away from the substrate layer is the first film layer; the magnesium fluoride film layer is connected to one side of the transition layer far away from the basal layer, and one side surface of the magnesium fluoride film layer far away from the transition layer is connected with at least one other second film layer in the plurality of second film layers.
Further, the refractive index of the first film layer is greater than 2.3.
Further, the refractive index of the second film layer is less than 1.7.
Further, the material of the first film layer is an oxide of Ti.
Further, the material of the second film layer comprises SiO 2 、SiO 2 With Al 2 O 3 Is a mixture of (a) and (b).
Further, the base layer material includes at least one of EP, APEL, K R.
Further, the refractive index of the base layer is 1.5 or more and 1.8 or less.
Further, when the transition layer is five layers, the transition layer is formed by a first film layer, a first second film layer, a second first film layer, a second film layer and a third first film layer from one side of the substrate layer, and the ratio of the thicknesses of the first film layer, the first second film layer, the second first film layer, the second film layer, the third first film layer, the magnesium fluoride film layer and the third second film layer is 10:30:50:10:30:90:15.
Further, when the transition layer is seven layers, the transition layer is formed by a first film layer, a first second film layer, a second first film layer, a second film layer, a third first film layer, a third second film layer and a fourth first film layer from one side of the substrate layer, and the ratio of the thicknesses of the first film layer, the first second film layer, the second first film layer, the second film layer, the third first film layer and the third second film layer to the thicknesses of the fourth first film layer, the magnesium fluoride film layer and the fourth second film layer is 10:50:20:20:100:10:30:90:15.
Further, the maximum reflectance of the antireflection film system to the wavelength of light having a wavelength in the range of 430nm to 750nm is 0.6% or less.
Further, the maximum reflectance of the antireflection film system for light having a wavelength in the range of 850nm to 1000nm is 1% or less.
Further, the minimum transmittance of the antireflection film system for light having a wavelength in the range of 420nm to 500nm is 93% or more.
Further, the minimum transmittance of the antireflection film system for light having a wavelength in the range of 500nm to 850nm is 97% or more.
Further, the antireflection film has an average transmittance of 98% or more for light having a wavelength in the range of 450nm to 850 nm.
According to another aspect of the present invention, there is provided a method for preparing an antireflection film system, the method for preparing an antireflection film system comprising a magnesium fluoride film layer as described above, the method comprising: baking the substrate layer; cooling the baked substrate layer, putting the substrate layer into a coating machine, heating the substrate layer to a coating temperature, and coating the substrate layer to form an antireflection coating system; the ion source auxiliary deposition system carries out auxiliary deposition on the film layer to enhance the density of the film layer; taking out the antireflection film system after coating is completed, and cooling; annealing the antireflection film system.
Further, in the process of baking the substrate layer, the baking temperature of the substrate layer is more than 70 ℃ and less than or equal to 90 ℃, and the baking time is more than 2 hours and less than or equal to 4 hours.
Further, the substrate layer after baking is cooled and then is put into a coating machine, and is heated to a coating temperature, and in the process of coating the substrate layer to form an anti-reflection coating system, the coating temperature is more than 90 ℃ and less than or equal to 120 ℃, and the coating time is more than 0.5h and less than or equal to 1h.
Further, in the process of annealing the anti-reflection film system, the annealing temperature of the anti-reflection film system is more than 80 ℃ and less than or equal to 90 ℃, and the annealing time is more than 2 hours and less than or equal to 4 hours.
Further, in the process of taking out the antireflection film system after coating and cooling, the antireflection film system is naturally cooled.
Further, in the process of taking out the antireflection film system after coating and cooling, the antireflection film system is cooled to 25 degrees.
By applying the technical scheme of the invention, the antireflection film system of the magnesium fluoride-containing film layer comprises: the magnesium fluoride film comprises a substrate layer, a plurality of first film layers, a plurality of second film layers and magnesium fluoride film layers, wherein the refractive index of the first film layers is larger than that of the second film layers, at least one second film layer of the plurality of first film layers and the plurality of second film layers is alternately overlapped to form a transition layer, the transition layer is connected with the substrate layer, and one side, far away from the substrate layer, of the transition layer is the first film layer; the magnesium fluoride film layer is connected to one side of the transition layer far away from the basal layer, and one side surface of the magnesium fluoride film layer far away from the transition layer is connected with at least one other second film layer in the plurality of second film layers.
By arranging the magnesium fluoride film layer on the antireflection film system, the reflectivity of the magnesium fluoride film layer is lower, and the reflectivity of the antireflection film system is greatly reduced. Meanwhile, the first film layer and the second film layer which are alternately overlapped are arranged between the substrate layer and the magnesium fluoride film layer, so that the reflectivity of the anti-reflection film system can be further reduced, and the light transmittance of the anti-reflection film system can be increased. And the outside at the magnesium fluoride rete sets up one deck second rete and can increase the transmissivity of light still increased the connection compactness between magnesium fluoride rete and the transition layer for the magnesium fluoride rete is difficult for breaking away from with the transition layer, greatly increased the connection compactness between magnesium fluoride rete and the transition layer, increased the firm intensity of anti-reflection coating system, greatly increased the reliability of anti-reflection coating system.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
FIG. 1 is a schematic view showing the structure of an antireflection film system according to a first embodiment of the present invention; and
FIG. 2 shows a schematic view of the reflectivity of the anti-reflection film system of FIG. 1 in the visible wavelength band;
FIG. 3 shows a schematic transmittance diagram of the antireflection film system of FIG. 1;
FIG. 4 is a schematic view showing the structure of an antireflection film system according to a second embodiment of the present invention;
FIG. 5 shows a schematic graph of the reflectivity of the anti-reflection film system of FIG. 4 in the visible and near infrared bands;
FIG. 6 shows a schematic graph of the transmittance of the anti-reflection film system of FIG. 4;
FIG. 7 shows a process flow diagram of the preparation of an antireflective film system according to an alternative embodiment of the invention.
Wherein the above figures include the following reference numerals:
10. a base layer; 20. a first film layer; 30. a second film layer; 40. magnesium fluoride film layer.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
It is noted that all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless otherwise indicated.
In the present invention, unless otherwise indicated, terms of orientation such as "upper, lower, top, bottom" are used generally with respect to the orientation shown in the drawings or with respect to the component itself in the vertical, upright or gravitational direction; also, for ease of understanding and description, "inner and outer" refers to inner and outer relative to the profile of each component itself, but the above-mentioned orientation terms are not intended to limit the present invention.
In order to solve the problem of infirm adhesion of magnesium fluoride film in the prior art, the main purpose of the invention is to provide an antireflection film system containing magnesium fluoride film and a preparation method thereof,
as shown in fig. 1 to 7, the antireflection film system of the magnesium fluoride-containing film layer comprises a substrate layer 10, a plurality of first film layers 20, a plurality of second film layers 30 and a magnesium fluoride film layer 40, wherein the refractive index of the first film layers 20 is larger than that of the second film layers 30, at least one second film layer 30 in the plurality of first film layers 20 and the plurality of second film layers 30 is alternately overlapped to form a transition layer, the transition layer is connected with the substrate layer 10, and one side of the transition layer far away from the substrate layer 10 is the first film layer 20; the magnesium fluoride film layer 40 is connected to a side of the transition layer remote from the substrate layer 10, and a side surface of the magnesium fluoride film layer 40 remote from the transition layer is connected to at least another second film layer 30 of the plurality of second film layers 30.
By arranging the magnesium fluoride film layer 40 on the antireflection film system, the reflectivity of the magnesium fluoride film layer 40 is lower, and the reflectivity of the antireflection film system is greatly reduced. Meanwhile, the first film layer 20 and the second film layer 30 which are alternately overlapped are arranged between the substrate layer 10 and the magnesium fluoride film layer 40, so that the reflectivity of the anti-reflection film system can be further reduced, and the transmittance of the anti-reflection film system to light can be increased. And set up one deck second rete 30 in the outside of magnesium fluoride rete 40 can increase the transmissivity of light still increased the connection compactness between magnesium fluoride rete 40 and the transition layer for magnesium fluoride rete 40 is difficult for breaking away from with the transition layer, greatly increased the connection compactness between magnesium fluoride rete 40 and the transition layer, increased the firm intensity of anti-reflection coating system, greatly increased the reliability of anti-reflection coating system.
Specifically, the refractive index of the first film layer 20 is greater than 2.3. This arrangement provides the first film layer 20 with a higher refractive index so that light entering the first film layer 20 is able to undergo a greater deflection, thereby providing a more uniform light distribution to the substrate layer 10 while reducing reflection of the light.
Specifically, the refractive index of the first film layer 20 may be 2.3, 2.7, 3.0, 3.3, 3.7, 4.0, 4.4, etc.
Specifically, the refractive index of the second film layer 30 is less than 1.7. The arrangement makes the second film layer 30 and the first film layer 20 have a certain refractive index difference, so that the refractive angles of the light rays when passing between the first film layer 20 and the second film layer 30 are different, the diversity of deflection of the light rays in the transition layer can be greatly increased, the reflection of the light rays is greatly reduced, and the light distribution reaching the substrate layer 10 is more uniform. Meanwhile, the refractive index of the second film layer 30 is smaller, so that light rays in air are favorably emitted into the magnesium fluoride film layer 40 through the second film layer 30, and reflection of the anti-reflection film system on the light rays is effectively reduced.
Specifically, the material of the first film layer 20 is an oxide of Ti. The material of the first film layer 20 may be any one of Ti oxides, and may be formed by mixing several of Ti oxides in any proportion.
Specifically, the material of the second film layer 30 includes SiO 2 、SiO 2 With Al 2 O 3 Is a mixture of (a) and (b). The material of the second film layer 30 may be SiO 2 Of a material, also SiO 2 With Al 2 O 3 The resulting mixture is mixed in any ratio, only to ensure that the refractive index of the second film layer 30 is less than 1.7.
Specifically, the base layer 10 material includes at least one of EP, APEL, K26R. The material of the base layer 10 is a conventional optical resin or optical glass.
Specifically, the refractive index of the base layer 10 is 1.5 or more and 1.8 or less. When the light rays are incident on the substrate layer 10, less reflected light is generated, and the light transmittance of the substrate layer 10 is ensured.
Specifically, the maximum reflectance of the antireflection film system for light having a wavelength in the range of 430nm to 750nm is 0.6% or less. The arrangement enables most of light on the antireflection film system to be absorbed, so that the antireflection film system has extremely low reflectivity, imaging light can be effectively reduced from being reflected to an imaging surface, the intensity of stray light is weakened, ghost images are reduced, and imaging quality is improved.
Specifically, the maximum reflectance of the antireflection film system for light having a wavelength in the range of 850nm to 1000nm is 1% or less. That is, the antireflective film system in the present application has low reflectivity for light in a wide wavelength range. Therefore, the antireflection film system in the application can have lower reflectivity for various lights, and the application range of the antireflection film system is greatly increased.
Specifically, the minimum transmittance of the antireflection film system for light having a wavelength in the range of 420nm to 500nm is 93% or more. The arrangement ensures that the anti-reflection film system has different transmittance for light of different wave bands, but has 93 percent transmittance for visible light in the range of 420nm to 500nm, thereby greatly reducing the loss of imaging light.
Specifically, the minimum transmittance of the antireflection film system for light having a wavelength in the range of 500nm to 850nm is 97% or more. The anti-reflection film system in the application can reach more than 97% transmittance for light in the range of 500nm to 850nm, so that most of light can penetrate through the anti-reflection film system for imaging, the loss of imaging light is reduced, and the imaging definition is ensured.
Specifically, the antireflection film has an average transmittance of 98% or more with respect to light having a wavelength in the range of 450nm to 850 nm. The average transmittance of the antireflection film system for light with the wavelength ranging from 50nm to 850nm can reach 98%, namely, the antireflection film system has extremely low reflectivity, most of light can penetrate the antireflection film system, only a small part of light is lost, the antireflection film system in the application can increase imaging definition, and imaging quality is improved.
The preparation method of the antireflection film system for preparing the magnesium fluoride-containing film layer comprises the following steps of: baking the substrate layer 10; cooling the baked substrate layer 10, putting the substrate layer 10 into a coating machine, heating the substrate layer 10 to a coating temperature, and coating the substrate layer 10 to form an antireflection coating system; the ion source auxiliary deposition system carries out auxiliary deposition on the film layer to enhance the density of the film layer; taking out the antireflection film system after coating is completed, and cooling; annealing the antireflection film system. The ion auxiliary deposition system is started to carry out auxiliary deposition on the film layer while coating the substrate layer 10, so that the density of each layer of the anti-reflection film system is increased, and the close connection between the film layers is ensured. And after the film coating is finished, annealing treatment is performed, so that the binding force of the film layers can be increased, the risk of detachment between the film layers is avoided, the risk of detachment of the magnesium fluoride film layers is greatly reduced, and the working stability of the anti-reflection film system is ensured. By baking the substrate layer 10, the residual stress of the substrate layer 10 can be effectively released, and the phenomenon of overstress can be avoided
Specifically, in the process of baking the base layer 10, the baking temperature of the base layer 10 is greater than 70 ℃ and equal to or less than 90 ℃, and the baking time is greater than 2 hours and equal to or less than 4 hours.
Specifically, the substrate layer 10 after baking is cooled and then placed in a coating machine, and is heated to a coating temperature, and in the process of coating the substrate layer 10 to form an antireflection coating system, the coating temperature is more than 90 ℃ and less than or equal to 120 ℃, and the coating time is more than 0.5h and less than or equal to 1h. The coating temperature can be effectively ensured to be fully combined between the film layers at 90-120 ℃, and the risk of falling off the film layers is greatly reduced.
Specifically, in the process of annealing the anti-reflection film system, the annealing temperature of the anti-reflection film system is more than 80 ℃ and less than or equal to 90 ℃, and the annealing time is more than 2 hours and less than or equal to 4 hours. The design of the annealing process can effectively prevent the stress of each film layer from being too concentrated, ensure the connection tightness between each film layer and effectively reduce the risk of falling off the film layer.
Specifically, the anti-reflection coating system is naturally cooled in the process of taking out the anti-reflection coating system and cooling after coating. The anti-reflection film system can be cooled slowly by the arrangement, the phenomenon of overlarge film stress is effectively avoided, and the natural cooling is more beneficial to the stability of the film.
Specifically, in the process of taking out the antireflection film system after coating and cooling the antireflection film system, the antireflection film system is cooled to 25 degrees. And after the antireflection film system is cooled to the water temperature, annealing treatment can be carried out on the antireflection film system.
Example 1
As shown in fig. 1 to 3, when the transition layer is five layers, the transition layer is formed by the first film layer 20, the first second film layer 30, the second first film layer 20, the second film layer 30, and the third first film layer 20 from one side of the substrate layer 10, and the ratio of the thicknesses of the first film layer 20, the first second film layer 30, the second first film layer 20, the second film layer 30, the third first film layer 20, the magnesium fluoride film layer 40, and the third second film layer 30 is 10:30:50:10:30:90:15. Wherein the material of the first film layer 20 is Ti 3 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second film layer 30 is Al 2 O 3 And SiO 2 Is a mixture of (a) and (b); the thickness of the first film layer 20 is about 10nm, the thickness of the first second film layer 30 is between 20nm and 40nm, and the thicknesses of the later film layers are analogized in the above ratio.
The antireflection film system in the embodiment can lead the single optical lens to have the maximum reflectivity R of light with the wavelength ranging from 420nm to 700nm max Less than or equal to 0.3 percent, and has minimum transmittance T for light with the wavelength ranging from 420nm to 500nm min Not less than 93%, minimum transmittance T for light with wavelength in the range of 500 nm-850 nm min ≥97％。
Example two
As shown in fig. 4 to 6, when the transition layer is seven layers, the transition layer is formed by a first film layer 20, a first second film layer 30, a second first film layer 20, a second film layer 30, a third first film layer 20, a third second film layer 30, and a fourth first film layer 20, and the ratio of the thicknesses of the first film layer 20, the first second film layer 30, the second first film layer 20, the second film layer 30, the third first film layer 20, the third second film layer 30, the fourth first film layer 20, the magnesium fluoride film layer 40, and the fourth second film layer 30The values are 10:50:20:20:100:10:30:90:15. Wherein the material of the first film layer 20 is Ti 3 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second film layer 30 is Al 2 O 3 And SiO 2 Is a mixture of (a) and (b); the thickness of the first film layer 20 is between 5nm and 10nm, the thickness of the first second film layer 30 is between 50nm and 70nm, and the thicknesses of the later film layers are analogized in the above-mentioned ratio.
The antireflection film system in the embodiment can lead the single-piece optical lens to have the maximum reflectivity R of light with the wavelength of 430-900 nm max Less than or equal to 0.6 percent, and the maximum reflectivity R of light with the wavelength ranging from 850nm to 1000nm max Less than or equal to 1 percent. Minimum transmittance T for light having a wavelength in the range of 450nm to 850nm min The anti-reflection film system in the embodiment can meet the use requirements of visible light and near infrared bands.
It will be apparent that the embodiments described above are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be implemented in sequences other than those illustrated or described herein.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (14)
1. An antireflection film system comprising a magnesium fluoride film layer, comprising:
a base layer (10);
a plurality of first film layers (20);
the refractive index of the first film layer (20) is larger than that of the second film layer (30), at least one second film layer (30) of the first film layer (20) and the second film layer (30) is alternately overlapped to form a transition layer, the transition layer is connected with the substrate layer (10), and one side of the transition layer far away from the substrate layer (10) is the first film layer (20);
a magnesium fluoride film layer (40), wherein the magnesium fluoride film layer (40) is connected to one side of the transition layer away from the substrate layer (10), one side surface of the magnesium fluoride film layer (40) away from the transition layer is connected with at least one other second film layer (30) of the plurality of second film layers (30), the refractive index of the first film layer (20) is greater than 2.3, the refractive index of the second film layer (30) is less than 1.7, and the refractive index difference between the first film layer (20) and the second film layer (30) is greater than 0.6;
the antireflection film has a maximum reflectance of 1% or less for light having a wavelength in the range of 850nm to 1000 nm;
and forming an anti-reflection film system by the coating, performing auxiliary deposition on the film layer by an ion source auxiliary deposition system to enhance the density of the film layer, and performing annealing treatment on the anti-reflection film system after cooling.
2. The magnesium fluoride-containing film antireflection film system according to claim 1, wherein the material of the first film layer (20) is an oxide of Ti.
3. The magnesium fluoride-containing film of claim 1, wherein the material of the second film (30) comprises SiO 2 、SiO 2 With Al 2 O 3 Is a mixture of (a) and (b).
4. A magnesium fluoride containing film according to any of claims 1 to 3, wherein the base layer (10) material comprises at least one of EP, APEL, K R.
5. A magnesium fluoride-containing film according to any one of claims 1 to 3, wherein the refractive index of the base layer (10) is 1.5 or more and 1.8 or less.
6. The antireflection film system of any one of claims 1 to 3, wherein when the transition layer is five layers, the transition layer is formed by a first one of the first film layer (20), a first one of the second film layer (30), a second one of the first film layer (20), a second one of the second film layer (30), and a third one of the first film layer (20), the first one of the second film layer (30), the second one of the first film layer (20), the second one of the second film layer (30), the third one of the first film layer (20), the magnesium fluoride film layer (40), and the third one of the second film layer (30) from one side of the base layer (10), and the ratio of thicknesses of the first one of the first film layer (20), the second one of the second film layer (30), the magnesium fluoride film layer (40), and the third one of the second one of the film layers (30) is 10:30:10:30:90:15.
7. The antireflection film system of any one of claims 1 to 3, wherein when the transition layer is seven layers, a first one of the first film layer (20), a first one of the second film layer (30), a second one of the first film layer (20), a second one of the second film layer (30), a third one of the first film layer (20), a third one of the second film layer (30), a fourth one of the first film layer (20), and a first one of the first film layer (20), the first one of the second film layer (30), the second one of the first film layer (20), the second one of the second film layer (30), the third one of the first film layer (20), the third one of the second film layer (30), the fourth one of the first film layer (20), the magnesium fluoride film layer (40), and the fourth one of the fourth film layer (40) have a thickness ratio of 10:20:30:30.
8. The antireflection film system of any one of claims 1 to 3, wherein the antireflection film system has a maximum reflectance of 0.6% or less at a wavelength of light having a wavelength in a range of 430nm to 750 nm.
9. The antireflection film system of any one of claims 1 to 3, wherein the antireflection film system has a minimum transmittance of 93% or more for light having a wavelength in the range of 420nm to 500 nm.
10. The antireflection film system of any one of claims 1 to 3, wherein the antireflection film system has a minimum transmittance of 97% or more for light having a wavelength in the range of 500nm to 850 nm.
11. The antireflection film system of any one of claims 1 to 3, wherein the antireflection film system has an average transmittance of 98% or more with respect to light having a wavelength in a range of 450nm to 850 nm.
12. A method for preparing an antireflection film system, characterized in that the antireflection film system comprising the magnesium fluoride film layer according to any one of claims 1 to 11 is prepared by adopting the method for preparing an antireflection film system, and the method for preparing an antireflection film system comprises the following steps:
baking the substrate layer (10);
cooling the substrate layer (10) after baking, then placing the substrate layer into a coating machine, heating the substrate layer to a coating temperature, and coating the substrate layer (10) to form an antireflection film system;
the ion source auxiliary deposition system carries out auxiliary deposition on the film layer to enhance the density of the film layer;
taking out the anti-reflection film system after coating is completed, and cooling;
and annealing the anti-reflection film system.
13. The method according to claim 12, wherein the baking temperature of the base layer (10) is greater than 70 ℃ and equal to or less than 90 ℃ and the baking time is greater than 2 hours and equal to or less than 4 hours during the baking of the base layer (10).
14. The method for preparing the anti-reflection coating system according to claim 12, wherein the coating temperature is more than 90 ℃ and less than or equal to 120 ℃ and the coating time is more than 0.5h and less than or equal to 1h in the process of cooling the substrate layer (10) to be baked, then placing the substrate layer into a coating machine, heating the substrate layer to the coating temperature and coating the substrate layer (10) to form the anti-reflection coating system.
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