CN113054443A - Low-frequency wave absorber - Google Patents
Low-frequency wave absorber Download PDFInfo
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- CN113054443A CN113054443A CN202110309268.3A CN202110309268A CN113054443A CN 113054443 A CN113054443 A CN 113054443A CN 202110309268 A CN202110309268 A CN 202110309268A CN 113054443 A CN113054443 A CN 113054443A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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Abstract
The invention discloses a low-frequency wave absorber which comprises a back plate, a first wave absorbing material layer arranged on the surface of the back plate, a first resistive film pattern arranged on the surface of the first wave absorbing material layer, a second wave absorbing material layer arranged on the surface of the first resistive film pattern and a second resistive film pattern arranged on the surface of the second wave absorbing material layer, wherein the first resistive film pattern and the second resistive film pattern are both resistive film patterns with bending structures, and the shapes of the first resistive film pattern and the second resistive film pattern are complementary in the thickness direction. The low-frequency wave absorber can work in a frequency band of 300 MHz-3 GHz, and has a good wave absorbing effect.
Description
Technical Field
The invention belongs to the technical field of stealth, and particularly relates to a low-frequency wave absorber.
Background
In recent years, the electromagnetic wave absorption technology is rapidly developed, and is widely researched in both military fields and civil fields. However, most of the research works on the wave absorbers are focused on the frequency range (i.e. 8-18 GHz frequency band) of the fire control radar, and the research on the low-frequency wave absorbers is less. Because the working frequency band of the prior remote early warning radar is mainly the P wave band, the design and manufacture of the low-frequency wave absorber have important significance for improving the anti-detection capability. There is a need for a wave absorber capable of operating in the frequency range of 300MHz to 3GHz to further improve the anti-probing capability.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a low-frequency wave absorber which can work in a frequency band of 300 MHz-3 GHz and has a good wave absorbing effect.
The technical scheme adopted by the invention is as follows:
a low-frequency wave absorbing body comprises a back plate, a first wave absorbing material layer arranged on the surface of the back plate, a first resistive film pattern arranged on the surface of the first wave absorbing material layer, a second wave absorbing material layer arranged on the surface of the first resistive film pattern, and a second resistive film pattern arranged on the surface of the second wave absorbing material layer, wherein the first resistive film pattern and the second resistive film pattern are both resistive film patterns with bending structures, and the shapes of the first resistive film pattern and the second resistive film pattern are complementary in the thickness direction.
Preferably, the first resistive film pattern and the second resistive film pattern are both rotationally symmetric patterns, and the rotation angle is 90 °; the shape of the back plate, the first wave absorbing material layer and the second wave absorbing material layer is square, and the side lengths of the back plate, the first wave absorbing material layer and the second wave absorbing material layer are the same.
Preferably, the second resistive film pattern comprises a square resistive film region located in the center and four pattern units with the same structure, each corner of the second wave-absorbing material layer corresponds to one pattern unit, and each pattern unit comprises a first resistive film line, a plurality of L-shaped resistive film lines and a second resistive film line, wherein the square resistive film region extends from one vertex to the edge of the second wave-absorbing material layer;
the four pattern units with the same structure are sequentially marked as a first pattern unit, a first pattern unit and a first pattern unit, wherein two edges of a corresponding angle on a second wave-absorbing material layer corresponding to the first pattern unit are respectively a first edge and a second edge, a second resistance film line of the first pattern unit extends to the first edge and is vertical to the first edge, and a second resistance film line of the second pattern unit extends to the second edge and is vertical to the second edge; one side of the L-shaped resistance film line of the first pattern unit is parallel to the second resistance film line of the first pattern unit, and the other side of the L-shaped resistance film line of the first pattern unit is parallel to the second resistance film line of the second pattern unit; two ends of the first resistance film line of the first pattern unit extend to the second edge, the rest part of the first resistance film line of the first pattern unit encloses an L-shaped area, one edge of the L-shaped area is parallel to the second resistance film line of the first pattern unit, and the other edge of the L-shaped area is perpendicular to the second edge.
Preferably, the distance between the second resistance film line and the L-shaped resistance film line, the distance between the L-shaped resistance film line and the first resistance film line, and the width of each side of the L-shaped area are the same.
Preferably, the side length of the square resistive film region is 3 × w +2 × g, where w is the line width of the second resistive film line, the L-shaped resistive film line, and the first resistive film line, and g is the distance between the second resistive film line and the L-shaped resistive film line.
Preferably, the side length of the back plate, the first wave absorbing material layer and the second wave absorbing material layer is 299.2 +/-23.2 mm, the distance between the second resistance film line and the L-shaped resistance film line is 23.9 +/-2 mm, the line width of the second resistance film line, the line width of the L-shaped resistance film line and the line width of the first resistance film line are 3.3 +/-2.1 mm, the thicknesses of the first wave absorbing material layer and the second wave absorbing material layer are the same, and the total thickness of the first wave absorbing material layer and the second wave absorbing material layer is 3 +/-0.2 mm.
Preferably, the line widths w of the second resistance film line, the L-shaped resistance film line and the first resistance film line, the distance g between the second resistance film line and the L-shaped resistance film line and the side lengths p of the back plate, the first wave absorbing material layer and the second wave absorbing material layer satisfy the following relations: when the side length of the back plate, the first wave absorbing material layer and the second wave absorbing material layer is p multiplied by k, the line width of the second resistance film line, the line width of the L-shaped resistance film line and the line width of the first resistance film line are w multiplied by k, the distance between the second resistance film line and the line width of the L-shaped resistance film line is g multiplied by k, and the k value is 0.1-3.
Preferably, the first resistive film pattern and the second resistive film pattern are interchangeable in position.
Preferably, the first wave-absorbing material layer and the second wave-absorbing material layer are made of RMS120 wave-absorbing materials.
Preferably, the first resistive film pattern and the second resistive film pattern are made of resistive film materials with square resistance values of 100-200 omega, and the backboard is made of copper backboard.
The invention has the following beneficial effects:
the low-frequency wave absorber adopts a laminated structure, and the resistive film patterns and the wave absorbing material layers are alternately superposed to form a lossy circuit, so that the circuit resonance is realized, and part of the energy of electromagnetic waves is lost. Meanwhile, when electromagnetic waves enter the wave absorber with the laminated structure, reflection cancellation occurs. The first resistive film pattern and the second resistive film pattern adopt bent resistive film patterns, so that the impedance matching between the wave-absorbing material and a free space is improved, and the integral wave-absorbing effect is improved. Meanwhile, the wavelength of the electromagnetic wave of the low frequency band is longer, and the current can resonate only when flowing through the integral multiple of half wavelength, so the size of the low frequency wave absorber is often larger, but the length of the current flowing through path is increased on the premise of not enlarging the structure size by the bent pattern, the problem of overlarge structure size caused by longer wavelength of the low frequency band is solved, and the miniaturization and the lightness of the wave absorber are realized. And, compared with a single pattern, the complementary-shaped pattern can have better matching and wave-absorbing effects. The backboard can prevent transmission of electromagnetic waves, and wave absorbing efficiency is improved. The low-frequency wave absorber with the structure can work in a frequency band of 300 MHz-3 GHz, and through the structural design, the low-frequency wave absorber also has a good wave absorbing effect.
Furthermore, the low-frequency wave absorber can be reduced or enlarged in equal proportion, the scaling ratio k is 0.1-3, and the low-frequency wave absorber can still reach the wave absorbing rate of more than 80% under the scaling ratio.
Drawings
FIG. 1(a) is a schematic diagram of the overall structure of the low-frequency wave absorber of the present invention, and FIG. 1(b) is a schematic diagram of the stacked structure of the low-frequency wave absorber of the present invention;
FIG. 2 is a schematic view of a second layer of absorbing material and a second resistive film pattern provided on a surface thereof in an embodiment of the invention;
FIG. 3 is a schematic view of a first resistive film pattern and a first wave absorbing material layer in an embodiment of the invention;
FIG. 4 is a schematic view of a back plate of a low frequency absorber of the present invention;
FIG. 5 is a diagram showing the simulation result of the reflection coefficient of the low-frequency wave absorber under the normal incidence of TE wave and TM wave in the embodiment of the present invention;
FIG. 6 is a wave absorption rate simulation result diagram of the low frequency wave absorber in the embodiment of the invention under the vertical incidence of TE wave and TM wave;
FIG. 7 is a wave absorption rate simulation result diagram of the low frequency wave absorber under the oblique incidence of TE waves in the embodiment of the invention;
FIG. 8 is a wave absorption rate simulation result diagram of the low frequency wave absorber under the oblique incidence of TM wave in the embodiment of the invention;
FIG. 9 is a comparison graph of the simulation results of the wave absorption rate of the low frequency wave absorber and the continuous ferrite with the same thickness and size in the embodiment of the invention.
In the figure, 1-a back plate, 2-a first wave-absorbing material layer, 3-a first resistive film pattern, 3-1-a fourth resistive film line, 3-2-a fifth resistive film line, 3-3-a sixth resistive film line, 3-4-a seventh resistive film line, 4-a second wave-absorbing material layer, 4-1-a first edge, 4-2-a second edge, 5-a second resistive film pattern, 5-1-a second resistive film line, 5-2-a first L-shaped resistive film line, 5-3-a second L-shaped resistive film line, 5-4-a first resistive film line, and 5-5-a square resistive film area.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1(a) -4, the low-frequency wave absorber of the invention includes a back plate 1, a first wave absorbing material layer 2 disposed on a surface of the back plate 1, a first resistive film pattern 3 disposed on a surface of the first wave absorbing material layer 2, a second wave absorbing material layer 4 disposed on a surface of the first resistive film pattern 3, and a second resistive film pattern 5 disposed on a surface of the second wave absorbing material layer 4, wherein the first resistive film pattern 3 and the second resistive film pattern 5 are both resistive film patterns with a bending structure, and the first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape in a thickness direction.
As a preferred embodiment of the present invention, the first resistive film pattern 3 and the second resistive film pattern 5 are both rotationally symmetric patterns, the rotation angle being 90 °; the shape of the back plate 1, the shape of the first wave absorbing material layer 2 and the shape of the second wave absorbing material layer 4 are both square, and the side lengths of the back plate 1, the first wave absorbing material layer 2 and the second wave absorbing material layer 4 are the same.
As a preferred embodiment of the present invention, the second resistive film pattern 5 includes a square resistive film region 5-5 located at the center and four pattern units with the same structure, each corner of the second wave-absorbing material layer 4 corresponds to one pattern unit, each pattern unit includes a first resistive film line 5-4, a plurality of L-shaped resistive film lines, and a second resistive film line 5-1 where the square resistive film region 5-5 extends from a vertex to an edge of the second wave-absorbing material layer 4;
the four pattern units with the same structure are sequentially marked as a first pattern unit, a first pattern unit and a first pattern unit, wherein two sides of a corresponding angle on the second wave-absorbing material layer 4 corresponding to the first pattern unit are a first side 4-1 and a second side 4-2 respectively, a second resistance film line 5-1 of the first pattern unit extends to the first side 4-1 and is vertical to the first side 4-1, and a second resistance film line 5-1 of the second pattern unit extends to the second side 4-2 and is vertical to the second side 4-2; one side of the L-shaped resistance film line of the first pattern unit is parallel to the second resistance film line 5-1 of the first pattern unit, and the other side of the L-shaped resistance film line of the first pattern unit is parallel to the second resistance film line 5-1 of the second pattern unit; two ends of the first resistance film line 5-4 of the first pattern unit extend to the second side 4-2, the rest part of the first resistance film line 5-4 of the first pattern unit encloses an L-shaped area, one side of the L-shaped area is parallel to the second resistance film line 5-1 of the first pattern unit, and the other side of the L-shaped area is perpendicular to the second side 4-2.
In a preferred embodiment of the present invention, the distance between the second resistive film line 5-1 and the L-shaped resistive film line, the distance between the L-shaped resistive film line and the first resistive film line 5-4, and the width of each side of the L-shaped region are the same.
As a preferred embodiment of the present invention, the side length of the square resistive film region 5-5 is 3 xw +2 xg, where w is the line width of the second resistive film line 5-1, the L-shaped resistive film line and the first resistive film line 5-4, and g is the distance between the second resistive film line 5-1 and the L-shaped resistive film line.
As a preferable embodiment of the invention, the side length of the back plate 1, the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 is 299.2 +/-23.2 mm, the distance between the second resistance film line 5-1 and the L-shaped resistance film line is 23.9 +/-2 mm, the line widths of the second resistance film line 5-1, the L-shaped resistance film line and the first resistance film line 5-4 are 3.3 +/-2.1 mm, the thicknesses of the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 are the same, and the total thickness of the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 is 3 +/-0.2 mm.
As a preferred embodiment of the present invention, the line widths w of the second resistive film lines 5-1, the L-shaped resistive film lines and the first resistive film lines 5-4, the distance g between the second resistive film lines 5-1 and the L-shaped resistive film lines, and the side lengths p of the back plate 1, the first wave absorbing material layer 2 and the second wave absorbing material layer 4 satisfy the following relations: when the side length of the back plate 1, the first wave absorbing material layer 2 and the second wave absorbing material layer 4 is p × k, the line width of the second resistance film line 5-1, the line width of the L-shaped resistance film line and the line width of the first resistance film line 5-4 are w × k, the distance between the second resistance film line 5-1 and the line width of the L-shaped resistance film line is g × k, and the value of k is 0.1-3.
As a preferred embodiment of the present invention, the first resistive film pattern 3 and the second resistive film pattern 5 can exchange positions.
As a preferable embodiment of the invention, the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 are made of RMS120 wave-absorbing materials.
In a preferred embodiment of the present invention, the first and second resistive film patterns 3 and 5 are made of a resistive film material having a square resistance of 100 to 200 Ω, and the back plate 1 is a copper back plate.
Examples
In order to meet the requirement of low-frequency wave absorption, a magnetic wave absorbing material with high magnetic loss in a low-frequency band, such as an RMS120 wave absorbing material, is generally adopted in the design. However, the low-frequency band electromagnetic wave has a longer wavelength, and in order to achieve a better wave-absorbing effect, the RMS120 wave-absorbing material needs a thicker thickness, so that the low-frequency band electromagnetic wave has the disadvantages of large surface density and heavy weight. Therefore, in order to design a low-frequency wave absorber with higher practical application value, a certain structure must be loaded on the substrate of the RMS120 wave absorbing material, so that the purposes of reducing the size of the wave absorber and increasing the absorption bandwidth are achieved while realizing low-frequency wave absorption.
The true bookThe low-frequency wave absorber provided by the embodiment is a low-frequency wave absorber working at 300 MHz-3 GHz, and the thickness of the low-frequency wave absorber is 3 mm. On the basis of RMS120 wave-absorbing material, two types of resistive film patterns with complementary shapes are loaded, and good impedance matching effect is realized. The linear resistive film is bent according to a certain rule, so that the size of the whole structure can be reduced on the premise of not losing the wave absorbing effect. The wave absorbing body has compact structure, small size and good wave absorbing effect, and solves the problems of overlarge size and too thick and heavy weight of the low-frequency wave absorbing body. Specifically, the back plate 1 of the low-frequency wave absorbing body is a copper back plate, the first wave absorbing material layer 2 and the second wave absorbing material layer 4 are used as parts for absorbing loss electromagnetic waves, the materials are RMS120 wave absorbing materials, and the first wave absorbing material layer 2, the second wave absorbing material layer 4 and the back plate are square with the side length of p. The first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape in the thickness direction, and referring to fig. 2 and 3, taking the orientation shown in fig. 1(b) as an example, the first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape in the thickness direction means: the projection of the first resistive film pattern 3 is embedded in the space (or the blank area) of the second resistive film pattern 5, and the projection of the second resistive film pattern 5 is embedded in the space (or the blank area) of the first resistive film pattern 3 in the thickness direction. In this embodiment, the total thickness of the low-frequency wave absorber is h, and the thicknesses of the first resistive film pattern 3, the second resistive film pattern 5 and the back plate 1 are very small and negligible, so the thicknesses of the first wave absorbing material layer 2 and the second wave absorbing material layer 4 in this embodiment are both h
Referring to fig. 2, the film lines of the second resistive film pattern 5 are formed by bending resistive films having a line width w, and the distance between the film lines is g. The center of the second resistive film pattern 5 is a square resistive film with a side length of (3 xw +2 xg), a second resistive film line 5-1 with a width of w extends from four vertexes of the square resistive film pattern, and the second resistive film line 5-1 extends to the edges of four sides of the whole wave absorber structure. Referring to fig. 3, the first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape, and a film line of the second resistive film pattern 5 is formed by bending a resistive film having a line width gSpaced from the film line by w, and the center of the pattern is a square gap with a side length of (3 × w +2 × g). Referring to fig. 1(a) -3, in the present example, two L-shaped resistive film lines are provided in each pattern unit of the second resistive film pattern 5.
In the low frequency absorber of this embodiment, the first resistive film pattern 3 and the second resistive film pattern 5 are made of resistive film materials having a square resistance of 150 Ω. The geometrical parameters are shown in the table 1:
TABLE 1
The low-frequency wave absorber of the embodiment is of a laminated structure, the resistive film and the RMS120 material are alternately superposed to form a lossy circuit, circuit resonance is realized, and partial energy of electromagnetic waves is lost. Meanwhile, when electromagnetic waves enter the wave absorber with the laminated structure, reflection cancellation occurs. The bent resistive film pattern is adopted, so that the impedance matching between the wave-absorbing material and the free space is improved, and the integral wave-absorbing effect is improved. Meanwhile, the wavelength of the electromagnetic wave in the low frequency band is longer, and the current can resonate only when flowing through the integral multiple of the half wavelength, so that the size of the low frequency wave absorber is often larger, but the length of a current flowing path is increased on the premise that the structural size is not enlarged by the bent pattern, the problem of overlarge structural size caused by the long wavelength in the low frequency band is solved, and the miniaturization and the lightness of the wave absorber are realized. And, compared with a single pattern, the complementary pattern can be better matched and wave-absorbing. Copper is used as the back plate and hardly transmits electromagnetic waves.
The working frequency band of the low-frequency wave absorber designed by the embodiment is 300 MHz-3 GHz.
FIG. 5 is a simulation result of reflection coefficients of the low-frequency wave absorber under normal incidence of TE waves and TM waves, and the result shows that the reflection coefficients are all lower than-7 dB at the frequency band of 300 MHz-3 GHz, and the low-frequency wave absorber has the characteristic of polarization insensitivity.
Fig. 6 is a simulation result of the wave absorption rate of the low-frequency wave absorber under the normal incidence of TE wave and TM wave, where the wave absorption rate is represented by formula a (ω) 1-S11|2And (4) calculating. Simulation results show that the wave absorbing rate reaches more than 80% in the frequency range of 300 MHz-3 GHz. For the electromagnetic wave with the frequency of 300 MHz-2 GHz, the low-frequency wave absorber realizes the wave absorbing rate of more than 90%.
Fig. 7 is a simulation result of the wave absorption rate of the low-frequency wave absorber under oblique incidence of the TE wave, and it can be seen that, when the TE wave is obliquely incident, the wave absorption rate of the low-frequency wave absorber decreases with the increase of the incident angle. When the incident angle is 40 degrees, the highest frequency point capable of realizing 80 percent wave absorbing rate is reduced from 3GHz to 2.5 GHz.
Fig. 8 is a simulation result of the wave absorption rate of the low-frequency wave absorber under oblique incidence of TM waves, and it can be seen that, when TM waves are obliquely incident, the wave absorption rate of a higher frequency band increases with the increase of the incidence angle. In addition, the low-frequency wave absorber has certain angle stability in the range of 40 degrees, and the wave absorbing rate does not change greatly along with the change of the incident angle.
Fig. 9 is a comparison of simulation results of wave-absorbing rates of the low-frequency wave absorber and the same-thickness and same-size RMS120 wave-absorbing material, and it can be seen that, in the frequency range of 300MHz to 3GHz, the wave-absorbing rate of the low-frequency wave absorber is higher than that of the RMS120 wave-absorbing material, and along with the reduction of frequency, the performance advantage of the wave absorber is more remarkable. Through calculation, compared with the RMS120 wave-absorbing material with the same side length and the same thickness, the average wave-absorbing rate of the wave-absorbing body on the frequency band of 300 MHz-3 GHz is improved by about 17.94%. Therefore, the low-frequency wave absorber has the advantages of small size, thin thickness, good wave absorbing effect and the like.
After the side length, the line width and the distance in the low-frequency wave absorber of the embodiment are amplified or reduced in equal proportion, the low-frequency wave absorber can still reach a wave absorbing rate of more than 80%. Specifically, at this time, the side length, the line width and the distance of the wave-absorbing material satisfy the following relations: when the side length of the wave-absorbing material is p multiplied by k, the line width and the space of the film line are w multiplied by k and g multiplied by k, wherein the value of k is 0.1-3.
If the non-square shape with other sizes is formed, the low-frequency wave absorber can be used as a wave absorbing unit and is realized by splicing a plurality of units.
Claims (10)
1. The low-frequency wave absorbing body is characterized by comprising a back plate (1), a first wave absorbing material layer (2) arranged on the surface of the back plate (1), a first resistive film pattern (3) arranged on the surface of the first wave absorbing material layer (2), a second wave absorbing material layer (4) arranged on the surface of the first resistive film pattern (3) and a second resistive film pattern (5) arranged on the surface of the second wave absorbing material layer (4), wherein the first resistive film pattern (3) and the second resistive film pattern (5) are both resistive film patterns with bending structures, and the first resistive film pattern (3) and the second resistive film pattern (5) are complementary in shape in the thickness direction.
2. A low frequency absorber as claimed in claim 1, wherein the first resistive film pattern (3) and the second resistive film pattern (5) are each a rotationally symmetric pattern with a rotation angle of 90 °; the shape of the back plate (1), the shape of the first wave absorbing material layer (2) and the shape of the second wave absorbing material layer (4) are both square, and the side lengths of the back plate (1), the first wave absorbing material layer (2) and the second wave absorbing material layer (4) are the same.
3. A low frequency absorber according to claim 2, wherein the second resistive film pattern (5) comprises a central square resistive film region (5-5) and four pattern elements of the same configuration, one pattern element for each corner of the second absorbing material layer (4), each pattern element comprising a first resistive film line (5-4), a plurality of L-shaped resistive film lines and a second resistive film line (5-1) extending from one vertex of the square resistive film region (5-5) to an edge of the second absorbing material layer (4);
the four pattern units with the same structure are sequentially marked as a first pattern unit, a first pattern unit and a first pattern unit, wherein two sides of a corresponding angle on a second wave-absorbing material layer (4) corresponding to the first pattern unit are respectively a first side (4-1) and a second side (4-2), a second resistance film line (5-1) of the first pattern unit extends to the first side (4-1) and is vertical to the first side (4-1), and a second resistance film line (5-1) of the second pattern unit extends to the second side (4-2) and is vertical to the second side (4-2); one side of the L-shaped resistance film line of the first pattern unit is parallel to a second resistance film line (5-1) of the first pattern unit, and the other side of the L-shaped resistance film line of the first pattern unit is parallel to the second resistance film line (5-1) of the second pattern unit; two ends of the first resistance film line (5-4) of the first pattern unit extend to the second side (4-2), the rest part of the first resistance film line (5-4) of the first pattern unit encloses an L-shaped area, one side of the L-shaped area is parallel to the second resistance film line (5-1) of the first pattern unit, and the other side of the L-shaped area is perpendicular to the second side (4-2).
4. A low frequency absorber according to claim 3 wherein the spacing between the second resistive film line (5-1) and the L-shaped resistive film line, the spacing between the L-shaped resistive film line and the first resistive film line (5-4), and the width of each side of the L-shaped region are the same.
5. A low frequency absorber according to claim 4 wherein the square resistive film region (5-5) has a side length of 3 xw +2 x g, wherein w is the line width of the second resistive film line (5-1), the L-shaped resistive film line and the first resistive film line (5-4), and g is the distance between the second resistive film line (5-1) and the L-shaped resistive film line.
6. The low-frequency wave absorbing body according to claim 4, wherein the side length of the back plate (1), the first wave absorbing material layer (2) and the second wave absorbing material layer (4) is 299.2 ± 3.2mm, the distance between the second resistance film line (5-1) and the L-shaped resistance film line is 23.9 ± 2mm, the line width of the second resistance film line (5-1), the L-shaped resistance film line and the first resistance film line (5-4) is 3.3 ± 2.1mm, the thicknesses of the first wave absorbing material layer (2) and the second wave absorbing material layer (4) are the same, and the total thickness of the first wave absorbing material layer (2) and the second wave absorbing material layer (4) is 3 ± 0.2 mm.
7. The low-frequency wave absorbing body according to claim 6, wherein the line widths w of the second resistance film lines (5-1), the L-shaped resistance film lines and the first resistance film lines (5-4), the spacing g between the second resistance film lines (5-1) and the L-shaped resistance film lines and the side lengths p of the back plate (1), the first wave absorbing material layer (2) and the second wave absorbing material layer (4) satisfy the following relations: when the side length of the back plate (1), the first wave absorbing material layer (2) and the second wave absorbing material layer (4) is p multiplied by k, the line width of the second resistance film line (5-1), the line width of the L-shaped resistance film line and the line width of the first resistance film line (5-4) are w multiplied by k, the distance between the second resistance film line (5-1) and the line width of the L-shaped resistance film line is g multiplied by k, and the value of k is 0.1-3.
8. A low frequency absorber as claimed in any one of claims 1-7, wherein the first resistive film pattern (3) and the second resistive film pattern (5) are interchangeable in position.
9. The low-frequency wave absorbing body according to claim 8, wherein the first wave absorbing material layer (2) and the second wave absorbing material layer (4) are made of RMS120 wave absorbing material.
10. The low frequency absorber according to claim 8, wherein the first resistive film pattern (3) and the second resistive film pattern (5) are made of resistive film material having a square resistance of 100-200 Ω, and the back plate (1) is made of copper back plate.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114142246A (en) * | 2021-11-24 | 2022-03-04 | 中国人民解放军空军工程大学 | A broadband large-angle metamaterial absorber based on graded impedance and its preparation method |
| CN114447623A (en) * | 2022-02-25 | 2022-05-06 | 哈尔滨工业大学 | Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions |
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| CN114142246A (en) * | 2021-11-24 | 2022-03-04 | 中国人民解放军空军工程大学 | A broadband large-angle metamaterial absorber based on graded impedance and its preparation method |
| CN114142246B (en) * | 2021-11-24 | 2023-06-23 | 中国人民解放军空军工程大学 | A wide-band and large-angle metamaterial absorber based on gradient impedance and its preparation method |
| CN114447623A (en) * | 2022-02-25 | 2022-05-06 | 哈尔滨工业大学 | Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions |
| CN114447623B (en) * | 2022-02-25 | 2023-02-24 | 哈尔滨工业大学 | Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions |
| WO2023160435A1 (en) * | 2022-02-25 | 2023-08-31 | 哈尔滨工业大学 | Optically transparent diffuse reflection wave absorber capable of absorbing and scattering ultra-wideband microwaves |
| CN118737335A (en) * | 2024-06-26 | 2024-10-01 | 徐工汉云技术股份有限公司 | Ultra-wideband absorber and verification optimization processing method of ultra-wideband absorber |
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