CN113053708A - Cathode flange plate for realizing close-proximity focusing of super-second-generation image intensifier and processing method - Google Patents
Cathode flange plate for realizing close-proximity focusing of super-second-generation image intensifier and processing method Download PDFInfo
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- CN113053708A CN113053708A CN202110292381.5A CN202110292381A CN113053708A CN 113053708 A CN113053708 A CN 113053708A CN 202110292381 A CN202110292381 A CN 202110292381A CN 113053708 A CN113053708 A CN 113053708A
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- cathode
- flange plate
- image intensifier
- super
- indium
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- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 36
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000007599 discharging Methods 0.000 claims abstract description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 17
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000003566 sealing material Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910000833 kovar Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
- H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
The invention discloses a cathode flange plate for realizing close-proximity focusing of a super-second generation image intensifier and a processing method thereof. An improved cathode flange plate comprises a flange plate body, through holes, bosses, an indium containing groove, a positioning pin and an indium discharging groove. An improved turning method is used for turning the surface A of an assembly ring by taking the surface B of the assembly ring in the tube shell structure of the super-second-generation image intensifier as a reference. And turning the lug boss of the improved cathode flange plate by taking the surface A of the assembling ring as a reference. The invention can realize the accurate control of the close focusing distance of the cathode of the super-second generation image intensifier, improve the consistency of the space size of the sealed cathode, the concentricity of the cathode and the cathode flange plate and the parallelism of the cathode and the microchannel plate, and improve the quality stability of the image intensifier.
Description
Technical Field
The invention relates to a cathode flange plate for realizing close-proximity focusing of a super-second generation image intensifier and a processing method thereof, belonging to the technical field of low-light-level image intensifiers.
Background
The low-light-level image intensifier is the core of the low-light-level night vision device and has important application in the fields of production, scientific research and the like.
The image intensifier mainly produced in China at present is a super-second generation image intensifier, and the structure of the image intensifier comprises a photocathode, a microchannel plate, a fluorescent screen and the like.
The photoelectric cathode can generate an external photoelectric effect, and when a weak light image is incident on the super-second-generation image intensifier, the excited state can be achieved and photoelectrons are emitted. Photoelectrons reach the microchannel plate under the action of field confinement. The microchannel plate plays a role in electron amplification, and can achieve an enhancement effect through multiplication of photoelectrons.
The photocathode and the microchannel plate of the super-second generation image intensifier are planes, and proximity focusing is realized by reducing the distance between the photocathode and the microchannel plate. For the close-proximity focusing mode, the smaller the spacing, the better the electron focusing. Therefore, the control of the cathode proximity distance plays a crucial role in the performance influence of the micro-light image intensifier.
At present, in the aspect of controlling the cathode close-proximity focusing distance of the super-second generation image intensifier, the problems of insufficient control stability of the cathode close-proximity distance, poor control of parallelism of a photocathode and a microchannel plate and the like exist, and the production and the application of the super-second generation image intensifier are seriously restricted.
Disclosure of Invention
The invention aims to solve the technical problem of providing a cathode flange plate for realizing close-proximity focusing of a super-second generation image intensifier and a processing method thereof aiming at the defects of the prior art.
The technical scheme for solving the technical problems is as follows: an improved cathode flange is used in conjunction with an improved turning process.
Firstly, the cathode flange plate for realizing close-proximity focusing of the super-second generation image intensifier and the processing method thereof comprise a flange plate body, a through hole, a boss, an indium containing groove, a positioning pin and an indium discharging groove; the boss is of a circular structure, is positioned on the innermost side of the flange plate body and is connected with the through hole, and is used for supporting the cathode window in the cathode sealing process and playing a role in limiting; the indium containing groove is positioned on the outer side of the boss and is used for filling and melting indium tin alloy serving as a sealing material of the cathode; the positioning pin is positioned in the indium containing groove and connected with the side wall of the indium containing groove to play a role in auxiliary cathode alignment; the indium discharge groove is positioned on the side wall of the indium containing groove, and plays a role in discharging excessive molten indium tin alloy in the sealing process, so that the phenomenon that the indium tin alloy is accumulated at the bottom of the indium containing groove to influence the close contact distance of a cathode is prevented, and the cathode window is ensured to be completely contacted with a boss.
Preferably, the flange plate body is made of kovar alloy 4J34, which not only can provide enough strength to protect the photocathode, but also is convenient for welding the tube shell and sealing the cathode window.
Preferably, the boss is located around the through hole, is of a circular structure, is used for supporting the cathode window in the cathode sealing process, and plays a limiting role, so that the cathode sealing distance is controlled.
Preferably, the indium containing groove is used for filling and melting indium tin alloy, the indium tin alloy is used as a sealing material of the cathode, and the cathode window and the cathode flange are sealed in the indium containing groove.
Preferably, the number of the positioning pins is 3, and the positioning pins are slightly positioned in the indium containing groove and connected with the side wall of the indium containing groove to play a role in assisting cathode alignment and preventing the influence on the effective focusing area caused by overlarge concentricity deviation when the cathode is sealed with the cathode flange.
Preferably, the indium discharging grooves are located on the side walls of the indium containing grooves, the number of the indium discharging grooves is 3, excessive molten indium tin alloy is discharged in the sealing process, the indium tin alloy is prevented from being accumulated at the bottom of the indium containing grooves, the close contact distance of a cathode is prevented from being influenced, and the cathode window is ensured to be completely contacted with the lug boss.
The invention relates to a method for processing a cathode flange plate for realizing close-proximity focusing of a super-second generation image intensifier, which comprises two steps. Firstly, turning an A surface of an assembly ring by taking a B surface of the assembly ring in the super-second generation image intensifier tube shell structure as a reference. And secondly, turning the improved cathode flange boss by taking the surface A of the assembling ring as a reference.
The first step of the machining method aims to improve the flatness of the surface A of the assembling ring as a reference surface, and further improves the turning quality of the second step. The second step aims to control the space distance of the cathode, improve the flatness of the boss and ensure the control of the cathode close-to distance with high precision.
Furthermore, in the processing method, in the second step, different turning sizes can be adopted, and the height of the turned boss is changed, so that the cathode close-proximity distance is controlled.
The invention has the beneficial effects that: the invention can realize the accurate control of the cathode close-proximity focusing distance of the super-second generation image intensifier, improve the consistency problem of the space size of the sealed cathode, ensure the concentricity of the sealed cathode and the cathode flange plate and the parallelism of the cathode and the microchannel plate, and improve the quality stability of the image intensifier.
Drawings
Fig. 1 is a schematic structural diagram of a cathode flange provided by the present invention.
Fig. 2 is a schematic structural diagram of a super-second generation image intensifier tube shell.
In the figure: the novel assembling ring comprises a flange plate body 1, a through hole 2, a boss 3, an indium containing groove 4, a positioning pin 5, an indium discharging groove 6, an assembling ring 8, an assembling ring A surface 9 and an assembling ring B surface 10.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
As shown in figure 1, the invention provides a cathode close-proximity focusing distance control method of a super-second generation image intensifier, which comprises an improved cathode flange plate, and the structure of the cathode flange plate is divided into a flange plate body 1, a through hole 2, a boss 3, an indium containing groove 4, a positioning pin 5 and an indium discharging groove 6.
The invention provides an improved cathode flange plate, which is used by the following method: firstly, the flange plate body 1 and other tube shell parts are welded to form the super-second-generation image intensifier tube shell assembly through brazing. And then, filling the indium containing groove 4 with block indium tin alloy, heating in a vacuum heating furnace to melt the indium tin alloy and fill the whole indium containing groove 4, and cooling to room temperature along with the furnace to solidify the indium tin alloy in the groove. And then turning the tube shell by a numerical control lathe.
Preferably, the heating temperature of the vacuum heating furnace is 500 ℃, and the holding time is 2 hours.
It should be noted that the total filling height of the indium-tin alloy in the indium containing groove 4 after processing is ensured to be higher than that of the lug boss 3, so that poor sealing performance after cathode sealing caused by insufficient filling amount is prevented.
The invention provides an improved turning method, which is used for turning a tube shell in a turning step and comprises the following steps: firstly, clamping the tube shell by using a clamp, and turning an A surface 9 of an assembly ring by taking a B surface 10 of the assembly ring in the tube shell structure as a reference, wherein the turning size is 0.02 mm. And secondly, replacing the clamp, and turning the lug boss of the improved cathode flange plate by taking the A surface 9 of the assembling ring as a reference, wherein the turning size is 2.68 mm.
And sealing the processed tube shell and the manufactured cathode window in an exhaust platform at the sealing temperature of 140 ℃. The cathode window is lifted by using a mechanical arm and slowly placed into the cathode flange plate in the vertical direction. The cathode window sealing surface is contacted with the molten indium tin alloy in the indium containing groove 4 and then continuously falls down, and the cathode in the horizontal direction is ensured to be aligned to the center of the through hole 2 under the action of the positioning pin 5 until the cathode completely contacts the lug boss 3. The molten indium tin alloy is squeezed by the space of the cathode window in the vertical direction, overflows the sealing surface and flows along the indium discharge groove 6. And cooling the exhaust table to solidify the molten indium tin alloy and finish sealing.
Preferably, the close focusing distance of the sealed cathode is 0.2-0.25 mm.
Preferably, the adjustment of the cathode proximity focusing distance can be realized by changing the turning size in the turning process.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A cathode flange plate for realizing close-proximity focusing of a super-second generation image intensifier is characterized in that:
comprises a flange plate body (1), a through hole (2), a boss (3), an indium containing groove (4), a positioning pin (5) and an indium discharging groove (6);
the boss (3) is of a circular structure, is positioned at the innermost side of the flange plate body (1) and is connected with the through hole (2), and is used for supporting the cathode window in the cathode sealing process and playing a role in limiting;
the indium containing groove (4) is positioned at the outer side of the boss (3) and is used for filling and melting indium tin alloy serving as a sealing material of a cathode;
the positioning pin (5) is positioned in the indium containing groove (4) and connected with the side wall of the indium containing groove (4) to play a role in auxiliary cathode alignment;
the indium discharge groove (6) is positioned on the side wall of the indium containing groove (4), and discharges excessive molten indium tin alloy in the sealing process, so that the indium tin alloy is prevented from being accumulated at the bottom of the indium containing groove (4), the close contact distance of a cathode is prevented from being influenced, and the cathode window is ensured to be completely contacted with the boss (3).
2. The super-second generation image intensifier cathode flange plate for realizing close-proximity focusing according to claim 1, characterized in that:
the positioning pins (5) are provided with 3.
3. The super-second generation image intensifier cathode flange plate for realizing close-proximity focusing according to claim 1, characterized in that:
the number of the indium discharge grooves (6) is 3.
4. The cathode flange plate of the super-second generation image intensifier for realizing close-proximity focusing according to any one of claims 1 to 3, characterized in that:
the flange plate body (1) is made of Kovar alloy 4J 34.
5. The method for processing the cathode flange plate for realizing the close-proximity focusing of the super-secondary image intensifier as claimed in any one of claims 1 to 4, is characterized by comprising the following steps:
firstly, turning an assembly ring A surface (9) by taking an assembly ring B surface (10) in a super-second generation image intensifier tube shell structure as a reference, wherein the turning is used for improving the flatness of the assembly ring A surface (9) which is taken as a reference surface;
and secondly, turning the boss (3) of the cathode flange plate by taking the surface A (9) of the assembling ring as a reference, and controlling the space distance of the cathode and improving the flatness of the boss (3).
6. The processing method according to claim 5, characterized in that:
in the second step, different turning sizes can be adopted, and the height of the turned boss (3) is changed for controlling the cathode close-proximity distance.
7. The processing method according to claim 5 or 6, characterized in that:
the turning size of the A surface (9) of the assembling ring is 0.02 mm.
8. The processing method according to claim 5 or 6, characterized in that:
the turning size of the boss (3) of the cathode flange plate is 2.68 mm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110047279 | 2021-01-14 | ||
| CN2021100472799 | 2021-01-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113053708A true CN113053708A (en) | 2021-06-29 |
| CN113053708B CN113053708B (en) | 2022-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110292381.5A Active CN113053708B (en) | 2021-01-14 | 2021-03-18 | Cathode flange plate for realizing close-proximity focusing of super-second-generation image intensifier and processing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4243905A (en) * | 1977-07-27 | 1981-01-06 | N.V. Optische Industrie "De Oude Delft" | Method of making the cathode of a diode image intensifier tube, and image intensifier tube having a cathode made by this method |
| US5369267A (en) * | 1993-05-18 | 1994-11-29 | Intevac, Inc. | Microchannel image intensifier tube with novel sealing feature |
| US20030127958A1 (en) * | 1999-05-07 | 2003-07-10 | Iosue Michael Jude | Night vision device and method |
| US20050106983A1 (en) * | 1999-03-18 | 2005-05-19 | Litton Systems, Inc. | Image intensification tube |
| CN108022819A (en) * | 2017-12-08 | 2018-05-11 | 北方夜视技术股份有限公司 | A kind of high-gain, high resolution, the production method of heavy caliber image intensifier tube |
-
2021
- 2021-03-18 CN CN202110292381.5A patent/CN113053708B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4243905A (en) * | 1977-07-27 | 1981-01-06 | N.V. Optische Industrie "De Oude Delft" | Method of making the cathode of a diode image intensifier tube, and image intensifier tube having a cathode made by this method |
| US5369267A (en) * | 1993-05-18 | 1994-11-29 | Intevac, Inc. | Microchannel image intensifier tube with novel sealing feature |
| US20050106983A1 (en) * | 1999-03-18 | 2005-05-19 | Litton Systems, Inc. | Image intensification tube |
| US20030127958A1 (en) * | 1999-05-07 | 2003-07-10 | Iosue Michael Jude | Night vision device and method |
| CN108022819A (en) * | 2017-12-08 | 2018-05-11 | 北方夜视技术股份有限公司 | A kind of high-gain, high resolution, the production method of heavy caliber image intensifier tube |
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| Publication number | Publication date |
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| CN113053708B (en) | 2022-04-29 |
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