CN113049860A - Three-class short-circuit protection circuit based on IGBT device terminal voltage drop detection - Google Patents
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Abstract
本发明公布了一种基于IGBT器件端子压降检测的三类短路保护电路，它包括短路保护检测电路、逻辑控制电路和电压比较电路；短路保护电路由电阻R3、电容C1、二极管D1及电流源电路组成；电阻R3一端接+15V电平，另一端与电容C1、二极管D1正极和电流源电路连接；电容C1另一端接地；辅助端子g极上分别连接有电阻R1和电阻R2，电阻R1与逻辑控制电路之间分别连接有三极管T1和三极管T2，电阻R2与逻辑控制电路之间连接有三极管T3。本发明包含了三类短路(SCⅢ)的保护功能，可以防止三类短路(SCⅢ)发生时器件发生闩锁失效(擎住效应)，提高变流器的可靠性。
The invention discloses a three-type short-circuit protection circuit based on IGBT device terminal voltage drop detection, which includes a short-circuit protection detection circuit, a logic control circuit and a voltage comparison circuit; the short-circuit protection circuit consists of a resistor R3, a capacitor C1, a diode D1 and a current source. Circuit composition; one end of the resistor R3 is connected to the +15V level, and the other end is connected to the capacitor C1, the anode of the diode D1 and the current source circuit; the other end of the capacitor C1 is grounded; the auxiliary terminal g is connected to the resistor R1 and the resistor R2 respectively, and the resistor R1 and the A transistor T1 and a transistor T2 are respectively connected between the logic control circuits, and a transistor T3 is connected between the resistor R2 and the logic control circuit. The invention includes the protection function of three types of short circuits (SCIII), which can prevent the device from latching failure (hold-up effect) when the three types of short circuits (SCIII) occur, thereby improving the reliability of the converter.
Description
Technical Field
The invention belongs to the technical field of IGBT drivers, and particularly relates to a three-class short-circuit protection circuit based on IGBT device terminal voltage drop detection.
Background
An Insulated Gate Bipolar Transistor (IGBT) and an Insulated Gate Bipolar Transistor (IGBT) are core power components forming various converters, the IGBT can normally work only by being provided with a proper driver, in order to improve the reliability and the service life of a conversion module, the driver must have an abnormal working condition protection function, and the short circuit of a main loop is the worst abnormal working condition.
Fig. 5 is a common three-phase bridge inverter circuit, which is composed of three bridge arms (each bridge arm is composed of an upper IGBT and a lower IGBT connected in series, the series midpoint is an ac output end), wherein Q1-Q6 are 6 IGBT devices, HV + and HV-are dc input ends, which are respectively connected to the positive and negative electrodes of a dc voltage, L1-L3 are loads of the inverter circuit (the loads may also be motors M), and each IGBT device is provided with a driving circuit board.
The short circuit classification (taking Q4 tube short circuit as an example) is briefly described as follows:
1) short circuit of the same kind (SC I)
One type of short circuit (SC I) is defined as: short circuits have occurred before the device was turned on, and the short circuit loop impedance is very low, typically not exceeding 200 nH. Fig. 8 is a typical test waveform, where green is an IGBT gate voltage Vge, blue is an IGBT terminal voltage Vce, red is a short-circuit current, and Q4 turns on to immediately enter a large current condition (a short-circuit condition), and since loop impedance is extremely low, Q4 is not saturated and turned on, the terminal voltage Vce of Q4 does not drop much, device loss is extremely large, the driver must ensure that Q4 is turned off within 10 μ s, otherwise Q4 will fail due to overheating, it must be ensured that the terminal voltage Vce of Q4 does not exceed the rated voltage of the device during the turn-off process, otherwise the IGBT will fail due to overvoltage, and generally the driver has a soft turn-off function to ensure this point.
2) Class II short circuit (SC II)
Two types of Short Circuits (SCII) are defined as: the short circuit has occurred before the device is turned on and the short circuit loop impedance is low, typically above 10 uH. Fig. 7 is a typical test waveform diagram, where green is an IGBT gate voltage Vge, black is an IGBT terminal voltage Vce, a red waveform is a short-circuit current, and Q4 turns on first to enter a saturation conduction stage, and since loop impedance is large, current rises slowly from zero (relatively to a short circuit, but still rises much more quickly than a normal load current), when the current increases to a certain value (usually 2-4 times of a rated current of a device), the IGBT exits the saturation conduction region and enters a linear amplification region, and Vce starts to rise, and loss gradually increases, at this time, the driver must ensure that Q4 is turned off within 10 μ s, otherwise Q4 will be overheated and fail, during the turn-off, it must ensure that Q4 Vce does not exceed the rated voltage of the device, otherwise the IGBT will fail, and the driver generally has a soft turn-off function to ensure this point.
3) Three types of short circuit (SC III)
Three types of short circuits (sciii) are defined as: the short circuit occurs after the device is turned on, and the impedance of the short circuit loop is extremely low and usually does not exceed 200 nH. Fig. 6 is a typical test waveform diagram, where the left-side waveform is that the IGBT is short-circuited while carrying current, green is the IGBT gate voltage Vge, blue is the IGBT terminal voltage Vce, red is the short-circuit current, and the Q4 device gate voltage Vge is high (usually +15V) before the short-circuit occurs, i.e., the IGBT is short-circuited in the forward on state, and the collector current Ic rises rapidly from the rated current value. The rate of change of current di/dt is determined by the collector-emitter voltage Vce and the series inductance LSC. In this process, the miller effect causes the gate voltage to rise, so the peak value of the short-circuit current is larger than that in the former 2 cases, and the latch-up failure (latch-up effect) is easy to occur, in which case the lGBT needs to bear more severe examination, and in order to protect the lGBT, the gate voltage clamping measure is usually adopted in the driving circuit.
The right side waveform is that the diode is in short circuit when carrying current, green is IGBT gate voltage Vge, blue is IGBT terminal voltage Vce, red waveform is short circuit current, the Fast Recovery Diode (FRD) is in a forward conduction state at the beginning, the lGBT connected with the fast recovery diode in anti-parallel is in a blocking state, and the FRD enters a reverse recovery state from the forward conduction state after the short circuit occurs, so the IGBT can be firstly switched on to enter the conduction state, and then enters the short circuit state as shown in the figure. In this case, the IGBT is subjected to the short-circuit shock with substantially the same severity as the left-side short-circuit case, but the FRD is subjected to a shock of a large voltage change rate (dv/dt) in a reverse recovery state, which is more severe than the IGBT.
At present, most of drivers in the market adopt the short circuit detection circuit shown in fig. 4, when the driver is normally switched on, the IGBT is in saturated conduction, the Vce voltage is very low (generally not more than 2V), the diode D is conducted, and the diode C is conductedblThe voltage on the gating is only IGBT saturated conduction voltage +0.7V (D conduction voltage drop), once the short-circuit working condition current is increased to a certain degree, the IGBT exits the saturated conduction region and enters the linear amplification region, the Vce voltage value begins to rise, and CblThe voltage on the clock also starts at IhCharging under the action of a current source when CblAfter the voltage on the clocking is increased by a set value, the driver delays for a period of time (usually 6-10 us), and the driver starts the soft shutdown circuit to turn off the IGBT in time (the soft shutdown part circuit is not shown in fig. 4).
The conventional detection mode can effectively protect a first-class short circuit (SC I) and a second-class short circuit (SC II), because the two short circuits are generated before the device is switched on, the current rises to a certain degree from 0 after the device is switched on, the device Vce rises, and the device Vce can be protected when reaching the set value of the driver. However, for the three types of short circuits (sciii), because the short circuit occurs only after the device is turned on, the impact on the device is large, the current often overshoots 6-10 times of the rated current of the device in a very short time, the conventional short-circuit protection strategy cannot limit the current peak value, only by means of the device itself resisting the extreme working condition, most of the devices cannot bear the extreme peak value to cause latch failure (latch up effect), and the conventional protection circuit cannot start the soft-off protection until Vce reaches the protection threshold value of the driver after the device is desaturated and the driver delays for a period of time (usually 6-10 us). It can be seen that the conventional protection circuit has a very limited protection effect against three types of short circuits (sciii).
Disclosure of Invention
The invention aims to solve the problems, and provides a three-type short circuit protection circuit based on IGBT device terminal voltage drop detection, which comprises the protection function of three-type Short Circuits (SCIII), can prevent the device from latch failure (latching effect) when the three-type Short Circuits (SCIII) occur, and improves the reliability of a converter.
In order to realize the purpose, the invention adopts the technical scheme that: a three-class short-circuit protection circuit based on IGBT device terminal voltage drop detection is disclosed, wherein the IGBT device comprises a main power terminal E pole, a power terminal C pole, an auxiliary terminal E pole, an auxiliary terminal C pole and an auxiliary terminal g pole, the auxiliary terminal E pole is grounded, and package inductances L are respectively arranged between the main power terminal E pole and the auxiliary terminal E pole and between the power terminal C pole and the auxiliary terminal C pole; the three types of short-circuit protection circuits comprise a short-circuit protection detection circuit, a logic control circuit and a voltage comparison circuit; the short-circuit protection circuit consists of a resistor R3, a capacitor C1, a diode D1 and a current source circuit; one end of the resistor R3 is connected with the +15V level, and the other end of the resistor R3 is connected with the capacitor C1, the anode of the diode D1 and the current source circuit; the other end of the capacitor C1 is grounded; the auxiliary terminal g is connected with a resistor R1 and a resistor R2 respectively, a triode T1 and a triode T2 are connected between the resistor R1 and the logic control circuit respectively, and a triode T3 is connected between the resistor R2 and the logic control circuit; the base electrode, the collector electrode and the emitter electrode of the triode T1 are respectively connected with a logic control circuit, a resistor R1 and a 15V level; the base electrode, the collector electrode and the emitter electrode of the triode T2 are respectively connected with a logic control circuit, a resistor R1 and a-15V level; the base electrode, the collector electrode and the emitter electrode of the triode T3 are respectively connected with a logic control circuit, a resistor R2 and a-15V level; the power terminal C pole and the logic control circuit are respectively connected with the anode and the cathode of a diode D1, and the voltage comparison circuit is respectively connected with the main power terminal E pole and the ground pole; the output end of the voltage comparison circuit is connected with a logic control circuit, and a voltage comparison threshold value used for comparing the voltage value VEe of the E pole of the main power terminal relative to the E pole of the auxiliary terminal is arranged in the voltage comparison circuit.
Further, the R1 resistance value is smaller than the R2 resistance value.
Further, the transistor T1 is a PNP transistor, and the transistor T2 and the transistor T3 are NPN transistors.
Further, the voltage comparison threshold value is determined by three types of short circuit experiments in a laboratory.
The invention has the beneficial effects that:
1. the invention realizes the detection of three types of short circuits (SC III) di/dt by detecting the voltage value of the E pole of the main power terminal relative to the ground of the driver (namely the auxiliary terminal E), because the current rising slope of the device is extremely high when the three types of short circuits (SC III) occur, voltage is induced on the package inductor L, VEe is usually between-30V and-100V at the moment, the voltage comparison circuit is compared with a preset threshold value (the threshold value is determined by laboratory three types of short circuit experiments), and when the amplitude of VEe is higher than the threshold value, the three types of short circuits (SC III) are considered to occur.
2. The invention has the advantages of novelty, innovation and practicability and is characterized in that the provided protection pulse strategy is used for momentarily pulling down Vge after detecting three types of short circuits (SC III) so as to limit the peak value of short-circuit current and prevent the device from latch failure (latch up effect), and because the device cannot be directly closed due to the short pulling-down time, the overvoltage failure of the device Vce cannot be caused (finally, a circuit for realizing the soft turn-off of the IGBT device is also a conventional short-circuit detection circuit consisting of R3, C1, D1 and a current source).
Drawings
Fig. 1 is a schematic circuit diagram of the present invention.
FIG. 2 is a diagram of a pulse scheme of the protection circuit of the present invention.
Fig. 3 is a circuit diagram of a prior art IGBT device.
Fig. 4 is a schematic diagram of a conventional short circuit detection circuit in the prior art.
Fig. 5 is a schematic diagram of a three-phase bridge inverter circuit in the prior art.
Fig. 6 is a waveform diagram of typical three short-circuit test waveforms of a main loop of an IGBT driver in the prior art.
Fig. 7 is a typical test waveform diagram of a type two short circuit of a main loop of an IGBT driver in the prior art.
Fig. 8 is a typical test waveform diagram of a short circuit of the main loop of the IGBT driver in the prior art.
Detailed Description
The following detailed description of the present invention is given for the purpose of better understanding technical solutions of the present invention by those skilled in the art, and the present description is only exemplary and explanatory and should not be construed as limiting the scope of the present invention in any way.
As shown in fig. 1-2, the specific structure of the present invention is: a three-class short-circuit protection circuit based on IGBT device terminal voltage drop detection is disclosed, wherein the IGBT device comprises a main power terminal E pole, a power terminal C pole, an auxiliary terminal E pole, an auxiliary terminal C pole and an auxiliary terminal g pole, the auxiliary terminal E pole is grounded, and package inductances L are respectively arranged between the main power terminal E pole and the auxiliary terminal E pole and between the power terminal C pole and the auxiliary terminal C pole; the three types of short-circuit protection circuits comprise a short-circuit protection detection circuit, a logic control circuit and a voltage comparison circuit; the short-circuit protection circuit consists of a resistor R3, a capacitor C1, a diode D1 and a current source circuit; one end of the resistor R3 is connected with the +15V level, and the other end of the resistor R3 is connected with the capacitor C1, the anode of the diode D1 and the current source circuit; the other end of the capacitor C1 is grounded; the auxiliary terminal g is connected with a resistor R1 and a resistor R2 respectively, a triode T1 and a triode T2 are connected between the resistor R1 and the logic control circuit respectively, and a triode T3 is connected between the resistor R2 and the logic control circuit; the base electrode, the collector electrode and the emitter electrode of the triode T1 are respectively connected with a logic control circuit, a resistor R1 and a 15V level; the base electrode, the collector electrode and the emitter electrode of the triode T2 are respectively connected with a logic control circuit, a resistor R1 and a-15V level; the base electrode, the collector electrode and the emitter electrode of the triode T3 are respectively connected with a logic control circuit, a resistor R2 and a-15V level; the power terminal C pole and the logic control circuit are respectively connected with the anode and the cathode of a diode D1, and the voltage comparison circuit is respectively connected with the main power terminal E pole and the ground pole; the output end of the voltage comparison circuit is connected with a logic control circuit, and a voltage comparison threshold value used for comparing the voltage value VEe of the E pole of the main power terminal relative to the E pole of the auxiliary terminal is arranged in the voltage comparison circuit.
Preferably, the resistance value of R1 is smaller than that of R2.
Preferably, the transistor T1 is a PNP transistor, and the transistor T2 and the transistor T3 are NPN transistors.
Preferably, the voltage comparison threshold is determined by three types of short circuit experiments in a laboratory.
When the system works, the rising slope (di/dt) of the short-circuit current when the three types of Short Circuits (SCIII) occur is much larger than that (di/dt) of the short-circuit current when the first type of Short Circuits (SCI) and the second type of Short Circuits (SCII) occur, so that a current rising slope (di/dt) detection circuit is arranged, the main power terminal E pole and the auxiliary terminal E pole have packaging inductance L (the power terminal C pole and the auxiliary terminal C pole also have) due to the packaging structure characteristics of the IGBT device, and corresponding induced voltage exists between the main power terminal E pole and the auxiliary terminal E pole when di/dt is higher. Therefore, the voltage difference between the main power terminal E pole and the auxiliary terminal E pole can be used as a sign for detecting three types of short circuits (sciii).
Normally, the gate terminal of the IGBT device includes a gate g and an auxiliary terminal e, where e is connected to the ground of the driver (0V), Vge is +15V when T1 is closed (T2 and T3 are open), the IGBT is opened, the device starts to carry current, and Vge is-15V when T2 is closed (T1 and T3 are open), the IGBT is turned off, and the device no longer carries current. A conventional short-circuit protection detection circuit is composed of R3, C1, D1 and a current source circuit, when the current of an IGBT device is too high, the device is out of saturation conduction, Vce begins to rise, the voltage on C1 also begins to rise, when the voltage on C1 rises to a threshold value set by a driver, the driver is closed to T3(T1 and T2 are in an off state), the IGBT device is closed through R2 (the resistance value of R2 is higher than R1), and therefore soft turn-off is achieved, and overvoltage failure of the device is prevented.
Three types of short circuits (SC III) occur when the device is in an on state (T1 is closed, T2 and T3 are opened), when the three types of short circuits (SC III) are detected, the gate voltage Vge of the Miller effect device can be increased to further cause the increase of short-circuit current, in order to prevent the short-circuit current from being overlarge, the driver should immediately pull down the Vge (T1 is closed, T2 is closed), but the Vge pull-down duration cannot be too long at the moment, otherwise, the IGBT device can be completely closed, and at the moment, the direct closing due to the overlarge current can cause the device Vce turn-off peak to be overhigh and fail. After short pull-down, the driver should rapidly pull up the gate voltage Vge of the device to the rated value (close T1, close T2) to prevent the STO (self-turn-off) phenomenon of the device (often, the STO can also cause the device to fail), and wait for 6-10 us before turning off the IGBT device.
As shown in fig. 2, before time T1, the IGBT device is in a normal on state, Vge is +15V (T1 is closed, T2 and T3 are opened), the voltage comparison circuit for three types of short circuits (SC iii) at time T1 detects that the amplitude of VEe is higher than a set threshold value, the logic control circuit immediately closes T1 and opens T2 for about 300ns to 1000ns (the specific time is different for different devices, and the optimum value is determined by experiments), the voltage comparison circuit opens T1 and closes T2 at time T2 to charge Vge to +15V again, and thereafter, the conventional short-circuit protection detection circuit composed of R3, C1, D1 and the current source circuit detects that VCE is higher than the set protection value, and after time delay of 6 to 10us, closes T1 and opens T3 to realize soft off of the IGBT device.
In particular, fig. 2 plots the control pulses of the IGBT device, and the actual Vge on the IGBT device side is affected by the gate capacitance of the IGBT device, and the waveform is not vertical.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts of the present invention. The foregoing is only a preferred embodiment of the present invention, and it should be noted that there are objectively infinite specific structures due to the limited character expressions, and it will be apparent to those skilled in the art that a plurality of modifications, decorations or changes may be made without departing from the principle of the present invention, and the technical features described above may be combined in a suitable manner; such modifications, variations, combinations, or adaptations of the invention using its spirit and scope, as defined by the claims, may be directed to other uses and embodiments.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114609501A (en) * | 2022-03-28 | 2022-06-10 | 国网智能电网研究院有限公司 | IGBT device short circuit experimental method and device |
| CN116953464A (en) * | 2023-07-31 | 2023-10-27 | 荣信汇科电气股份有限公司 | All-condition short circuit test method and device for IGBT power module |
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| CN110568335A (en) * | 2019-07-18 | 2019-12-13 | 北京交通大学 | A SiC MOSFET short-circuit detection and protection system and method without detection blind zone |
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| CN210297240U (en) * | 2019-06-25 | 2020-04-10 | 徐州中矿大传动与自动化有限公司 | IGBT short-circuit fault rapid protection circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114609501A (en) * | 2022-03-28 | 2022-06-10 | 国网智能电网研究院有限公司 | IGBT device short circuit experimental method and device |
| CN116953464A (en) * | 2023-07-31 | 2023-10-27 | 荣信汇科电气股份有限公司 | All-condition short circuit test method and device for IGBT power module |
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