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CN113049097A - Optical power measuring device - Google Patents

Optical power measuring device Download PDF

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Publication number
CN113049097A
CN113049097A CN202110266423.8A CN202110266423A CN113049097A CN 113049097 A CN113049097 A CN 113049097A CN 202110266423 A CN202110266423 A CN 202110266423A CN 113049097 A CN113049097 A CN 113049097A
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light
optical power
wavelength
laser
incident laser
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CN113049097B (en
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韦欣
谢新宇
李川川
李健
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Institute of Semiconductors of CAS
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0455—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings having a throughhole enabling the optical element to fulfil an additional optical function, e.g. a mirror or grating having a through-hole for a light collecting or light injecting optical fibre
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/56—Photometry, e.g. photographic exposure meter using radiation pressure or radiometer effect

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Spectrometry And Color Measurement (AREA)

Abstract

An optical power measurement device comprising: the micro electro mechanical system comprises a vertical cavity surface emitting laser, a connecting column, a light receiving platform, a spectrum analysis module and a power calculation module; the micro electro mechanical system-vertical cavity surface emitting laser comprises an epitaxial structure and a micro electro mechanical system-Bragg reflector connected with the epitaxial structure; the micro-electro-mechanical-Bragg reflector is connected with the light receiving platform through a connecting column; the light receiving platform receives radiation pressure generated by irradiation of incident laser, and the radiation pressure is transmitted to the micro-electro-mechanical-Bragg reflector through the connecting column so as to enable the micro-electro-mechanical-Bragg reflector to displace; laser light generated by the vertical cavity surface emitting laser is emitted out through the micro-electromechanical-Bragg reflector; the spectral analysis module is arranged on the light path of the laser light; the spectral analysis module is used for measuring the wavelength of the laser light; the power calculation module is electrically connected with the spectrum analysis module; the power calculation module is used for calculating the optical power of the incident laser according to the wavelength of the laser light.

Description

Optical power measuring device
Technical Field
The invention relates to the field of laser power measurement, in particular to an optical power measuring device.
Background
Micro-electro-mechanical Systems-Vertical-cavity Surface-emitting Lasers (MEMS-VCSELs) are taken as tunable Surface-emitting Lasers, and have the advantages of single-Mode operation and wide Mode-hop-free tuning range besides the characteristics of low threshold, low loss and small divergence angle of the VCSELs, and are ideal light sources for communication, gas detection and Optical Coherence Tomography (OCT).
The traditional method for measuring the laser power adopts a thermal power meter, the incident light needs to be completely absorbed, a beam splitter is adopted to divide the incident light into a 90% part and a 10% part under the condition of high power, the power of a light source is deduced by measuring the 10% power, but under the kW magnitude, the working power level of semiconductor and photoelectric cathode multiplying equipment (for absorbing photons) in the existing test system is limited, the semiconductor and the photoelectric cathode multiplying equipment are easily burnt out, and the online real-time high-power measurement is difficult to realize; and the splitting ratio cannot be fully ensured, thereby bringing about a problem of high uncertainty.
Disclosure of Invention
In view of the above, the present invention is directed to an optical power measuring device, which is designed to solve at least one of the above problems.
In order to achieve the above object, the present invention provides an optical power measuring apparatus comprising: the micro electro mechanical system comprises a vertical cavity surface emitting laser, a connecting column, a light receiving platform, a spectrum analysis module and a power calculation module;
the micro electro mechanical system-vertical cavity surface emitting laser comprises an epitaxial structure and a micro electro mechanical system-Bragg reflector connected with the epitaxial structure; the micro-electromechanical-Bragg reflector is connected with the light receiving platform through the connecting column; the light receiving platform is irradiated by incident laser to generate radiation pressure, and the radiation pressure is transmitted to the micro-electromechanical-Bragg reflector through the connecting column so as to enable the micro-electromechanical-Bragg reflector to displace; laser light generated by the vertical cavity surface emitting laser is emitted out through the micro-electromechanical-Bragg reflector; the spectral analysis module is arranged on a light path of the laser light; the spectral analysis module is used for measuring the wavelength of the laser light; the power calculation module is electrically connected with the spectrum analysis module; the power calculation module is used for calculating the optical power of the incident laser according to the wavelength of the laser light.
When the difference value between the wavelength of the incident laser and the wavelength of the laser light is in a set range, the incident laser and the laser light cannot be coherent, and the spectral analysis module receives the laser light which is transmitted along the connecting column and penetrates through the light receiving platform.
Wherein, the device also comprises a total reflection mirror arranged on the connecting column; the full reflector is used for reflecting the laser light transmitted along the connecting column; when the wavelength of the incident laser is equal to that of the laser light, the incident laser is coherent with the laser light, and the spectrum analysis module receives the laser light reflected by the total reflection mirror.
Wherein the epitaxial structure comprises: the substrate, the lower Bragg reflector, the active region and the upper Bragg reflector are sequentially connected from bottom to top; the upper Bragg reflector is connected with the micro-electromechanical-Bragg reflector.
Wherein the radiation pressure is:
Figure BDA0002971501950000022
wherein, F is radiation pressure, k is elastic stiffness, Deltax is displacement value of displacement of the micro-electromechanical-Bragg reflector, P is optical power of incident laser, c is optical speed, R (theta) is reflectivity related to incident angle, theta is incident angle of the incident laser, alpha is absorption coefficient, phi is divergence angle of the incident laser.
Wherein the power calculation module comprises:
a first calculation unit for calculating a wavelength variation value from the wavelength of the laser light and the center frequency of the micro electro mechanical system-vertical cavity surface emitting laser;
and a second calculation unit for calculating the optical power of the incident laser light from the wavelength variation value.
Wherein the optical power of the incident laser in the second calculation unit is:
Figure BDA0002971501950000021
wherein, P is the optical power of the incident laser, k is the elastic stiffness, c is the optical speed, Δ x is the displacement value of the displacement of the micro-electromechanical Bragg reflector, R (θ) is the reflectivity related to the incident angle, θ is the incident angle of the incident laser, α is the absorption coefficient, Φ is the divergence angle of the incident laser, Δ λ is the wavelength variation value, and M is the relation function between the wavelength variation value Δ λ and the displacement value Δ x.
Wherein the wavelength variation value in the first calculation unit is:
Δλ＝λ1-λ0；
wherein, Delta lambda is the wavelength variation value, lambda1Is the wavelength of the laser light, λ0Is the center frequency of the micro electro mechanical system-vertical cavity surface emitting laser.
Wherein the light receiving platform is a thin film.
The thin film is made of a material which is completely transparent to the laser light and completely reflective to the incident laser light.
Based on the above technical solution, the optical power measuring device of the present invention has at least a part of the following advantages compared with the prior art:
the invention provides an optical power measuring device.A micro electro mechanical system-Bragg reflector (MEMS-DBR) in a micro electro mechanical system-vertical cavity surface emitting laser (MEMS-VCSEL) is connected with a light receiving platform through a connecting column; the light receiving platform transmits radiation pressure generated by hitting incident laser on the light receiving platform to the micro-electro-mechanical-Bragg reflector through the connecting column so as to enable the micro-electro-mechanical-Bragg reflector to displace; the spectrum analysis module is arranged on a light path of laser light transmitted by the micro-electromechanical-Bragg reflector to measure the wavelength of the laser light, and the power calculation module calculates the optical power of the incident laser light based on the wavelength. The device is based on the optical radiation pressure principle, the emission wavelength is tuned by changing the position of the micro-electromechanical-Bragg reflector, the beam splitting of an incident light source and the total absorption of all photons are not needed, the online real-time high-power measurement is realized, the problem of high uncertainty caused by the incident light source and the incident light source is avoided, and the stability of the optical power measurement is improved.
Drawings
Fig. 1 is a schematic structural diagram of an optical power measurement apparatus provided in embodiment 1 of the present invention;
fig. 2 is a beam spatial distribution diagram of incident laser provided in embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of an optical power measurement apparatus provided in embodiment 2 of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Example 1
Fig. 1 is a schematic structural diagram of an optical power measurement apparatus provided in embodiment 1 of the present invention. Referring to fig. 1, the optical power measuring apparatus of the present embodiment includes: the micro electro mechanical system comprises a vertical cavity surface emitting laser, a connecting column 6, a light receiving platform 7, a spectrum analysis module and a power calculation module.
The micro electro mechanical system-vertical cavity surface emitting laser comprises an epitaxial structure and a micro electro mechanical system-Bragg reflector (5) connected with the epitaxial structure; the micro-electromechanical-Bragg reflector (5) is connected with the light receiving platform (7) through the connecting column (6); the light receiving platform 7 is used for transmitting radiation pressure generated by the incident laser a hitting the light receiving platform 7 to the micro-electromechanical-bragg reflector 5 through the connecting column 6, so that the micro-electromechanical-bragg reflector 5 is displaced; the micro-electro-mechanical-Bragg reflector 5 transmits the laser light b, and the micro-electro-mechanical-Bragg reflector 5 can change the wavelength of the output laser light b after displacement; the spectral analysis module is arranged on a light path of the laser light b; the spectral analysis module is used for measuring the wavelength of the incident laser light a; the power calculation module is electrically connected with the spectrum analysis module; the power calculation module is used for calculating the optical power of the incident laser a according to the wavelength of the laser b.
In this embodiment, the difference between the wavelength of the incident laser a and the wavelength of the laser b is within a predetermined range, and at this time, the incident laser a and the laser b are not coherent, and the spectral analysis module receives the laser transmitted along the connecting column 6 and through the light receiving platform 7. For example, the wavelength of the incident laser light a is 1070nm, the wavelength of the laser light b is 1550nm, the wavelengths of the incident laser light a and the laser light b are not similar, and at this time, the incident laser light a and the laser light b are not coherent, and the spectral analysis module is located on the transmission light path of the light receiving platform 7 and receives the laser light which is transmitted along the connecting column 6 and passes through the light receiving platform 7.
As an alternative embodiment, the epitaxial structure includes: the substrate 1, the lower Bragg reflector 2, the active region 3 and the upper Bragg reflector 4 are sequentially connected from bottom to top; the upper Bragg reflector 4 is connected with the micro-electromechanical-Bragg reflector 5.
As an alternative embodiment, the radiation pressure is:
Figure BDA0002971501950000041
wherein, F is radiation pressure, k is elastic stiffness (spring stiffness), Δ x is displacement value of displacement of the micro-electromechanical Bragg reflector, P is optical power of incident laser, c is optical speed, R (θ) is reflectivity related to an incident angle, θ is the incident angle of the incident laser, α is an absorption coefficient, and Φ is a divergence angle of the incident laser. The beam spatial distribution of the incident laser beam is shown in fig. 2.
As an optional implementation, the power calculation module includes:
a first calculation unit for calculating a wavelength variation value from the wavelength of the laser light and the center frequency of the MEMS-VCSEL
Δλ＝λ1-λ0
Wherein, Delta lambda is the change of wavelengthChange value of lambda1Is the wavelength of the laser light, λ0Is the center frequency of the micro electro mechanical system-vertical cavity surface emitting laser.
A second calculation unit for calculating the optical power of the incident laser light from the wavelength variation value
Figure BDA0002971501950000051
Wherein, P is the optical power of the incident laser, k is the elastic stiffness, c is the optical speed, Δ x is the displacement value of the displacement of the micro-electromechanical Bragg reflector, R (θ) is the reflectivity related to the incident angle, θ is the incident angle of the incident laser, α is the absorption coefficient, Φ is the divergence angle of the incident laser, Δ λ is the wavelength variation value, and M is the relation function between the wavelength variation value Δ λ and the displacement value Δ x.
In an alternative embodiment, the light receiving platform 7 is a thin film. The thin film is made of a material which is completely transparent to the laser light and completely reflective to the incident laser light.
The optical power measuring device of the embodiment is realized according to the following principle:
the incident laser with power P (1kW-100kW) is irradiated to the light receiving platform 7 (the light receiving platform 7 has high reflectivity to the incident light, and momentum exchange is ensured as much as possible), and the radiation pressure borne by the light receiving platform 7
Figure BDA0002971501950000052
Where θ is the incident angle and Φ is the divergence angle of the incident laser light, the radiation pressure is transmitted to the MEMS-DBR of the MEMS-VCSEL through the connecting post 6 without change (the light receiving platform 7 is a very small film, and the influence of gravity is not considered), the MEMS-DBR generates the displacement Δ x, the wavelength of the laser light emitted from the MEMS-VCSEL changes Δ λ, and the wavelength change Δ λ and the displacement Δ x are functions of each other (Δ x ═ M (Δ λ)), and the center wavelength of the MEMS-VCSEL with known performance is λ0The light receiving platform 7 is made of a material which is completely transparent to laser light and completely reflective to incident laser light, and the laser light of the MEMS-VCSEL enters a spectrum analysis module which can measure the emission wavelength lambda of the laser light1Thus, Δ λ ═ λ can be obtained1-λ0The power P can be calculated by measuring the wavelength variation Δ λ, and specifically, the wavelength information is transmitted to the power calculation module, and then calculated by a formula
Figure BDA0002971501950000061
After obtaining Δ λ, Δ x is obtained correspondingly, and when other parameters R (θ), α, and Φ are known, the power calculation module may calculate to obtain a specific power value.
Example 2
Fig. 3 is a schematic structural diagram of an optical power measurement apparatus provided in embodiment 2 of the present invention. Referring to fig. 3, unlike the above embodiments, the optical power measuring apparatus of the present embodiment further includes a total reflection mirror 8 disposed on the connecting column 6; the total reflection mirror 8 is used for reflecting the laser light transmitted along the connecting column 6.
In this embodiment, the wavelength of the incident laser a is similar to or equal to that of the laser b, and at this time, the incident laser a and the laser b may be coherent, and the spectrum analysis module receives the laser reflected by the total reflection mirror 8. For example, the wavelength of the incident laser light a and the wavelength of the laser light b are 1070nm and are equal, and at this time, the incident laser light a and the laser light may be coherent, and the spectrum analysis module is located in the reflected light of the holomirror 8. The total reflection mirror 8 can be a plane high reflection mirror.
The optical power measuring device of the embodiment is realized according to the following principle:
the incident laser with power P (1kW-100kW) is irradiated to the light receiving platform 7 (the light receiving platform 7 has high reflectivity to the incident light, and momentum exchange is ensured as much as possible), and the radiation pressure borne by the light receiving platform 7
Figure BDA0002971501950000062
Where θ is the incident angle and Φ is the divergence angle of the incident laser light, the radiation pressure is transmitted to the MEMS-DBR of the MEMS-VCSEL via the connecting post 6 without change (the light receiving platform 7 is a thin film with very small thickness and mass, and the influence of gravity is not considered), and the MEMS-DBR is displaced, the wavelength of the laser light emitted from the MEMS-VCSEL is changed, and the wavelength change value delta lambda is lambda1-λ0The total reflection mirror 8 embedded in a certain position of the connecting column 6 reflects the laser light to one side for measurement, the spectral analysis module emits the laser light on the side, and the power P can be calculated by measuring the wavelength change value delta lambda, and the specific process is consistent with that of the embodiment 1.
The optical power measuring device can be applied to laser welding, additive manufacturing, directional energy deposition and the like. The device utilizes the tunable characteristic of the known MEMS-VCSEL, the wavelength change delta lambda of the laser light is caused by the position change delta x of the MEMS-DBR (the specific corresponding relation corresponds to a specific MEMS-VCSEL structure and can be obtained through testing at first), the device does not need to absorb all incident light completely, and does not need to split the light under high power, so that the problem of uncertainty increase caused by the fact is avoided.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims (10)

1.一种光功率测量装置，其特征在于，包括：微机电系统-垂直腔面发射激光器、连接柱、受光平台、光谱分析模块和功率计算模块；1. an optical power measuring device, is characterized in that, comprises: microelectromechanical system-vertical cavity surface emitting laser, connecting column, light receiving platform, spectrum analysis module and power calculation module; 所述微机电系统-垂直腔面发射激光器包括外延结构和与所述外延结构连接的微机电-布拉格反射镜；所述微机电-布拉格反射镜通过所述连接柱与所述受光平台连接；所述受光平台受到入射激光的照射产生的辐射压力，所述辐射压力通过所述连接柱传送至所述微机电-布拉格反射镜，以使得所述微机电-布拉格反射镜发生位移；垂直腔面发射激光器产生的激射光透过所述微机电-布拉格反射镜出射；所述光谱分析模块设置在所述激射光的光路上；所述光谱分析模块用于测量所述激射光的波长；所述功率计算模块与所述光谱分析模块电连接；所述功率计算模块用于根据所述激射光的波长计算所述入射激光的光功率。The MEMS-vertical cavity surface emitting laser includes an epitaxial structure and a MEMS-Bragg mirror connected with the epitaxial structure; the MEMS-Bragg mirror is connected to the light receiving platform through the connecting column; The light-receiving platform is subjected to the radiation pressure generated by the irradiation of the incident laser, and the radiation pressure is transmitted to the MEMS-Bragg mirror through the connecting column, so that the MEMS-Bragg mirror is displaced; vertical cavity surface emission The lasing light generated by the laser is emitted through the MEMS-Bragg mirror; the spectral analysis module is arranged on the optical path of the lasing light; the spectral analysis module is used to measure the wavelength of the lasing light; the power The calculation module is electrically connected with the spectrum analysis module; the power calculation module is used for calculating the optical power of the incident laser light according to the wavelength of the laser light. 2.根据权利要求1所述的光功率测量装置，其特征在于，当所述入射激光的波长与所述激射光的波长的差值处于设定范围时，所述入射激光与所述激射光不会发生相干，所述光谱分析模块接收沿所述连接柱传输且透过所述受光平台的激射光。2 . The optical power measuring device according to claim 1 , wherein when the difference between the wavelength of the incident laser light and the wavelength of the lasing light is within a set range, the incident laser light and the lasing light No coherence occurs, and the spectral analysis module receives the lasing light transmitted along the connecting column and passing through the light receiving platform. 3.根据权利要求1所述的光功率测量装置，其特征在于，还包括设置在所述连接柱上的全反镜；所述全反镜用于将沿所述连接柱传输的激射光反射；当所述入射激光的波长与所述激射光的波长相等时，所述入射激光与所述激射光发生相干，所述光谱分析模块接收所述全反镜反射的激射光。3 . The optical power measuring device according to claim 1 , further comprising a total reflection mirror arranged on the connection column; the total reflection mirror is used to reflect the laser light transmitted along the connection column. 4 . ; When the wavelength of the incident laser light is equal to the wavelength of the lasing light, the incident laser light and the lasing light are coherent, and the spectrum analysis module receives the lasing light reflected by the total reflection mirror. 4.根据权利要求1所述的光功率测量装置，其特征在于，所述外延结构包括：由底向上依次连接的衬底、下布拉格反射镜、有源区和上布拉格反射镜；所述上布拉格反射镜上连接所述微机电-布拉格反射镜。4 . The optical power measuring device according to claim 1 , wherein the epitaxial structure comprises: a substrate, a lower Bragg mirror, an active region and an upper Bragg mirror connected in sequence from bottom to top; the upper Bragg mirror The MEMS-Bragg mirror is connected to the Bragg mirror. 5.根据权利要求1所述的光功率测量装置，其特征在于，所述辐射压力为：5. The optical power measuring device according to claim 1, wherein the radiation pressure is:
Figure FDA0002971501940000011
Figure FDA0002971501940000011
 其中，F为辐射压力，k为弹性刚度，Δx为微机电-布拉格反射镜发生位移的位移值，P为入射激光的光功率，c为光速，R(θ)为与入射角相关的反射率，θ为入射激光的入射角，α为吸收系数，Φ为入射激光的发散角。Among them, F is the radiation pressure, k is the elastic stiffness, Δx is the displacement value of the MEMS-Bragg mirror, P is the optical power of the incident laser, c is the speed of light, and R(θ) is the reflectivity related to the incident angle. , θ is the incident angle of the incident laser light, α is the absorption coefficient, and Φ is the divergence angle of the incident laser light. 6.根据权利要求1所述的光功率测量装置，其特征在于，所述功率计算模块包括：6. The optical power measuring device according to claim 1, wherein the power calculation module comprises: 第一计算单元，用于由所述激射光的波长和所述微机电系统-垂直腔面发射激光器的中心频率计算波长变化值；a first calculation unit, configured to calculate a wavelength change value from the wavelength of the lasing light and the center frequency of the MEMS-vertical cavity surface emitting laser; 第二计算单元，用于由所述波长变化值计算所述入射激光的光功率。The second calculation unit is configured to calculate the optical power of the incident laser light from the wavelength change value. 7.根据权利要求6所述的光功率测量装置，其特征在于，所述第二计算单元中所述入射激光的光功率为：7. The optical power measuring device according to claim 6, wherein the optical power of the incident laser in the second calculation unit is:
Figure FDA0002971501940000021
Figure FDA0002971501940000021
 其中，P为入射激光的光功率，k为弹性刚度，c为光速，Δx为微机电-布拉格反射镜发生位移的位移值，R(θ)为与入射角相关的反射率，θ为入射激光的入射角，α为吸收系数，Φ为入射激光的发散角，Δλ为波长变化值，M为波长变化值Δλ和位移值Δx之间的关系函数。Among them, P is the optical power of the incident laser, k is the elastic stiffness, c is the speed of light, Δx is the displacement value of the MEMS-Bragg mirror, R(θ) is the reflectivity related to the incident angle, and θ is the incident laser The incident angle of α is the absorption coefficient, Φ is the divergence angle of the incident laser, Δλ is the wavelength change value, and M is the relationship function between the wavelength change value Δλ and the displacement value Δx. 8.根据权利要求6所述的光功率测量装置，其特征在于，所述第一计算单元中所述波长变化值为：8. The optical power measuring device according to claim 6, wherein the wavelength change value in the first calculation unit is: Δλ＝λ1-λ0；Δλ=λ 1 −λ 0 ; 其中，Δλ为波长变化值，λ1为激射光的波长，λ0为微机电系统-垂直腔面发射激光器的中心频率。Among them, Δλ is the wavelength change value, λ 1 is the wavelength of the lasing light, and λ 0 is the center frequency of the MEMS-vertical cavity surface emitting laser. 9.根据权利要求1所述的光功率测量装置，其特征在于，所述受光平台为薄膜。9 . The optical power measuring device according to claim 1 , wherein the light receiving platform is a thin film. 10 . 10.根据权利要求9所述的光功率测量装置，其特征在于，所述薄膜的材料为对所述激射光完全透过且对所述入射激光完全反射的材料。10 . The optical power measuring device according to claim 9 , wherein the material of the thin film is a material that completely transmits the laser light and completely reflects the incident laser light. 11 .
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