CN113037246B - Duplexer, manufacturing method thereof and multiplexer - Google Patents
Duplexer, manufacturing method thereof and multiplexer Download PDFInfo
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- CN113037246B CN113037246B CN202110181222.8A CN202110181222A CN113037246B CN 113037246 B CN113037246 B CN 113037246B CN 202110181222 A CN202110181222 A CN 202110181222A CN 113037246 B CN113037246 B CN 113037246B
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
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- H03H9/64—Filters using surface acoustic waves
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Abstract
The embodiment of the invention discloses a duplexer, a manufacturing method thereof and a multiplexer, wherein the transmitting filter and the receiving filter are integrated on the same substrate, so that the integration level of the duplexer can be improved, and the size of the duplexer can be reduced. The transmitting filter and the receiving filter can be manufactured on the same substrate at the same time, and can share a film structure, so that the integration level of the duplexer is further improved, the size of the duplexer is further reduced, and the manufacturing cost of the duplexer is reduced. The transmitting filter and the receiving filter share a sealing ring structure, so that the occupied area of the sealing ring can be reduced; the transmitting filter and the receiving filter are surrounded by the peripheral sealing frame body of the sealing ring, and the structures of the transmitting filter and the receiving filter can be more compact, which is beneficial to further reducing the size of the duplexer.
Description
Technical Field
The embodiment of the invention relates to the technical field of communication, in particular to a duplexer, a manufacturing method thereof and a multiplexer.
Background
The acoustic wave filter is widely applied in the communication field, and with the miniaturization and the acceleration of high performance trend of communication equipment in recent years, a higher challenge is provided for a radio frequency front end, and how to reduce the chip size becomes a problem to be solved urgently.
The duplexer comprises an acoustic wave filter, and particularly, the existing duplexer generally comprises a transmitting filter and a receiving filter, and the duplexer has the functions of sharing the transmission and the reception of signals through one antenna, filtering and selecting the signals through an internal transmitting end filter and an internal receiving end filter in a frequency division communication system. The conventional duplexer is based on a bulk acoustic wave thin film resonator (Film Bulk Acoustic Resonator, hereinafter abbreviated as FBAR) and a surface acoustic wave (Surface Acoustic Wave, hereinafter abbreviated as SAW) resonator, and a duplexer built with an FBAR filter and a duplexer built with a SAW filter are respectively constructed. However, with the continuous increase of the communication frequency, the SAW filter has a center frequency of only about 2GHz due to the limitation of its own structure and the nature of the surface acoustic wave, and the SAW filter cannot meet the requirement of the 5G communication frequency. The center frequency of the FBAR filter can reach the 5G frequency band, so that the FBAR filter is more widely applied.
In the duplexer built by the traditional FBAR filter, the transmitting filter and the receiving filter are usually manufactured on different substrates, and the transmitting filter and the receiving filter are of independent structures, so that the traditional duplexer is low in integration level, and therefore the size of the duplexer is large. In addition, in the prior art, the transmitting filter and the receiving filter need to be produced independently, so that two sets of photoetching plates are needed for manufacturing, and correspondingly, the two sets of photoetching plates need to be manufactured independently in one set of working procedure, so that the manufacturing cost is high.
Disclosure of Invention
The invention provides a duplexer, a manufacturing method thereof and a multiplexer, which are used for reducing the size of the duplexer and reducing the manufacturing cost.
In a first aspect, an embodiment of the present invention provides a duplexer, including: the device comprises a transmitting filter, a receiving filter and a sealing ring; the transmitting filter and the receiving filter are integrated on the same substrate;
the sealing ring, the transmitting filter and the receiving filter are arranged on the same side of the substrate; the transmitting filter and the receiving filter share the sealing ring, the sealing ring comprises a peripheral sealing frame body arranged on the peripheries of the transmitting filter and the receiving filter, and the peripheral sealing frame body surrounds the transmitting filter and the receiving filter.
Optionally, the transmitting filter includes a plurality of resonator units, and the receiving filter includes a plurality of resonator units;
the diplexer further comprises a substrate;
the surface of the substrate comprises a first setting area and a second setting area, and the first setting area and the second setting area are not overlapped; the resonator units of the transmit filter are distributed in an aggregate in the first set-up region and the resonator units of the receive filter are distributed in an aggregate in the second set-up region.
Optionally, the sealing ring further includes a separation structure, where the separation structure is connected to the peripheral sealing frame and forms a first sub-sealing frame and a second sub-sealing frame with the peripheral sealing frame, the first sub-sealing frame surrounds the transmitting filter, and the second sub-sealing frame surrounds the receiving filter.
Optionally, the transmitting filter includes a plurality of resonator units, and the receiving filter includes a plurality of resonator units;
the diplexer further comprises a substrate;
the resonator units of the transmitting filter and the resonator units of the receiving filter are alternately distributed on the surface of the substrate.
Optionally, the device further comprises a cover plate, wherein the cover plate is positioned on one side of the sealing ring, the transmitting filter and the receiving filter, which is far away from the substrate;
the cover plate, the sealing ring and the substrate form a sealing structure, and the transmitting filter and the receiving filter are positioned in the sealing structure.
Optionally, in a thickness direction of the duplexer, a size of the seal ring is larger than a size of the transmitting filter, and a size of the seal ring is larger than a size of the receiving filter.
Optionally, the duplexer includes the substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer stacked from the substrate;
wherein the lower electrode layer includes a lower electrode of each of the resonator units, the piezoelectric layer includes a piezoelectric unit of each of the resonator units, the upper electrode layer includes an upper electrode of each of the resonator units, and the upper electrodes are separated from each other;
optionally, in the transmitting filter and the receiving filter, at least part of lower electrodes of the resonator units are separated from each other; optionally, the lower electrodes of the resonator units are separated from each other, and the piezoelectric units of the resonator units are continuous with each other; optionally, at least part of the piezoelectric units of the resonator units are separated from each other; optionally, the piezoelectric units of each resonator unit are mutually separated;
optionally, the piezoelectric element further comprises a mass loading layer, wherein the mass loading layer is arranged on one side of the upper electrode layer, which is far away from the piezoelectric layer; the mass loading layer comprises at least one mass loading unit, and the mass loading unit corresponds to the upper electrode in the thickness direction of the substrate; at least one of the resonator units comprises the mass-loading unit.
Optionally, the lower electrode of the resonator unit included in the transmitting filter is different from the lower electrode of the resonator unit included in the receiving filter in thickness;
and/or the thickness of the upper electrode of the resonator unit included in the transmitting filter is different from that of the upper electrode of the resonator unit included in the receiving filter;
and/or the thickness of the piezoelectric unit of the resonator unit included in the transmitting filter is different from the thickness of the piezoelectric unit of the resonator unit included in the receiving filter;
and/or the mass-loading unit of the resonator unit included in the transmitting filter is different from the mass-loading unit of the resonator unit included in the receiving filter in thickness.
Optionally, the resonator units comprising the same thickness of the set structure are distributed in an aggregation manner;
wherein the setting structure is the upper electrode, the lower electrode, the piezoelectric unit or the mass load unit.
Optionally, a seed layer is further included, the seed layer being located between the lower electrode layer and the substrate.
Optionally, the surface of the substrate, which is close to the lower electrode layer, comprises a plurality of grooves, the grooves are in one-to-one correspondence with the resonator units, the side walls and the bottom surfaces of the grooves are in non-contact with the lower electrode layer, and a cavity structure is formed between the lower electrode layer and the grooves and used as a cavity of the resonator units;
Optionally, the duplexer further includes a conductive via and a connection member, wherein the connection member is disposed between the substrate and the substrate, and the conductive via is electrically connected to the connection member and the lower electrode layer, respectively.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a duplexer, including:
manufacturing a transmitting filter and a receiving filter on the same substrate;
the substrate is provided with the transmitting filter and the receiving filter, and a sealing ring is arranged on one side of the substrate, the sealing ring comprises a peripheral sealing frame body arranged on the peripheries of the transmitting filter and the receiving filter, and the peripheral sealing frame body surrounds the transmitting filter and the receiving filter.
Optionally, the manufacturing the transmitting filter and the receiving filter on the same substrate includes:
forming a plurality of grooves on the surface of the substrate, and filling sacrificial materials in the grooves;
forming a lower electrode layer including a plurality of lower electrodes on one side of a surface of the substrate;
forming a piezoelectric layer including a plurality of piezoelectric units on a side of the lower electrode layer away from the substrate;
forming an upper electrode layer including a plurality of upper electrodes on a side of the piezoelectric layer away from the substrate to form a plurality of resonator units including the lower electrodes, the piezoelectric units, and the upper electrodes;
And forming a via hole penetrating through the upper electrode layer, the piezoelectric layer and the lower electrode layer at a position right opposite to the groove, and releasing the sacrificial material through the via hole.
Optionally, the manufacturing the transmitting filter and the receiving filter on the same substrate includes:
forming a resonator unit of the emission filter at a first preset position of the substrate;
forming a resonator unit of the receiving filter at a second preset position of the substrate;
the first preset position and the second preset position are alternately distributed.
Optionally, after forming the upper electrode layer on a side of the piezoelectric layer away from the substrate, the method further includes:
and forming a mass load layer comprising at least one mass load unit on one side of the upper electrode layer away from the substrate, wherein the mass load unit corresponds to the upper electrode in the thickness direction of the substrate.
Optionally, the forming a lower electrode layer including a plurality of lower electrodes on one side of the surface of the substrate includes:
uniformly depositing a lower electrode material layer with uniform thickness on one side of the surface of the substrate;
forming the lower electrode layer including the lower electrodes with different thicknesses by adopting an etching process or a stripping process on the lower electrode material layer;
Optionally, when the lower electrode layer is formed by an etching process or a stripping process, the lower electrodes with the same thickness are distributed in an aggregation manner by controlling the technological parameters of the etching process or the stripping process.
In a third aspect, an embodiment of the present invention further provides a multiplexer, including the duplexer provided in the first aspect.
According to the duplexer, the manufacturing method thereof and the multiplexer, the transmitting filter and the receiving filter are integrated on the same substrate, so that the integration level of the duplexer can be improved, and the size of the duplexer can be reduced. Because the transmitting filter and the receiving filter are integrated on the same substrate, the transmitting filter and the receiving filter can be manufactured on the same substrate at the same time, and the film structure can be shared, so that the integration level of the duplexer is further improved, and the size of the duplexer is further reduced. Because the transmitting filter and the receiving filter can be manufactured on the same substrate at the same time, the manufacturing of the duplexer can be completed by adopting a photoetching plate and a set of process manufacturing flow, and the manufacturing cost of the duplexer is reduced. The transmitting filter and the receiving filter share a sealing ring structure, so that the occupied area of the sealing ring can be reduced, and the size of the duplexer is further reduced; the transmitting filter and the receiving filter are surrounded by the peripheral sealing frame body of the sealing ring, and the structures of the transmitting filter and the receiving filter can be more compact, which is beneficial to further reducing the size of the duplexer.
Drawings
Fig. 1 is a plan view of a duplexer provided in the present embodiment;
fig. 2 is a cross-sectional view of a duplexer provided in an embodiment of the present invention;
fig. 3 is a top view of another duplexer provided in an embodiment of the present invention;
fig. 4 is a top view of another duplexer provided in an embodiment of the present invention;
fig. 5 is a top view of another duplexer provided in an embodiment of the present invention;
fig. 6 is a top view of another duplexer provided in an embodiment of the present invention;
fig. 7 is a top view of another duplexer provided in an embodiment of the present invention;
fig. 8 is a cross-sectional view of another duplexer provided in an embodiment of the present invention;
fig. 9 is a cross-sectional view of another duplexer provided in an embodiment of the present invention;
fig. 10 is a cross-sectional view of another duplexer provided in an embodiment of the present invention;
fig. 11 is a cross-sectional view of another duplexer provided in an embodiment of the present invention;
fig. 12 is a flowchart of a method for manufacturing a duplexer according to an embodiment of the present invention;
fig. 13 is a flowchart of another method for manufacturing a duplexer according to an embodiment of the present invention;
FIG. 14 is a schematic view of a structure after forming a recess in a surface of a substrate and filling the recess with a sacrificial material;
FIG. 15 is a schematic view of a structure after forming a lower electrode layer including a plurality of lower electrodes on a surface of a substrate;
Fig. 16 is a schematic structural view after forming a piezoelectric layer including a plurality of piezoelectric units on a side of a lower electrode layer away from a substrate;
fig. 17 is a schematic structural view after forming an upper electrode layer including a plurality of upper electrodes on a side of the piezoelectric layer away from the substrate;
FIG. 18 is a schematic structural view after forming a mass-loaded layer on a side of the upper electrode layer away from the substrate;
FIG. 19 is a schematic view of the structure after release of the sacrificial material.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
The present embodiment provides a duplexer, fig. 1 is a top view of the duplexer provided in the present embodiment, and fig. 2 is a cross-sectional view of the duplexer provided in the present embodiment, wherein fig. 2 may be taken along a section line AA' corresponding to fig. 1, and referring to fig. 1 and fig. 2, the duplexer includes a transmitting filter 200, a receiving filter 300, and a sealing ring 830; the transmit filter 200 and the receive filter 300 are integrated on the same substrate 100;
The sealing ring 830, the transmitting filter 200 and the receiving filter 300 are arranged on the same side of the substrate 100; the transmission filter 200 and the reception filter 300 share a sealing ring 830, and the sealing ring 830 includes a peripheral sealing frame 831 provided at the periphery of the transmission filter 200 and the reception filter 300, and the peripheral sealing frame 831 surrounds the transmission filter 200 and the reception filter 300.
The material of the substrate 100 may be at least one of silicon, gallium arsenide, silicon carbide, and gallium nitride.
The transmission filter 200 may include at least one resonator unit, and when the transmission filter 200 includes at least two resonator units, each resonator unit may form the transmission filter 200 by a set series or parallel structure.
The reception filter 300 may include at least one resonator unit, and when the reception filter 300 includes at least two resonator units, each resonator unit may form the reception filter 300 by a set series or parallel structure.
In this embodiment, the transmitting filter 200 and the receiving filter 300 are integrated on the same substrate 100, and transmission and reception of signals can be simultaneously realized.
Specifically, in the existing production process of the duplexer, a plurality of emission filters are usually manufactured on a large-size substrate, an interval is arranged between adjacent emission filters, the interval is called a dicing channel, and after the manufacturing of the emission filters is completed, the independent emission filters are obtained by cutting at the dicing channel; similarly, in the existing production process of the duplexer, a plurality of receiving filters are usually manufactured on another large-size substrate, an interval is arranged between adjacent receiving filters, the interval is called a dicing channel, and after the plurality of receiving filters are manufactured, a plurality of independent receiving filters are obtained by cutting at the dicing channel; and finally integrating the independent transmitting filter and the independent receiving filter on the substrate to form the duplexer. Because the transmitting filter and the receiving filter are not integrated on the same substrate, the total scribing channels are more, and in order to ensure that the structures of the transmitting filter and the receiving filter are not destroyed during cutting, in the cutting process, the edges of the transmitting filter and the receiving filter possibly remain part of redundant substrates, and then the occupied area is larger when the independent transmitting filter and the independent receiving filter are integrated on the substrate, so that the duplexer is lower in integration level and larger in size. And the transmitting filter and the receiving filter are manufactured on different substrates, so that the transmitting filter and the receiving filter cannot share the film structure, and the integration level of the duplexer is further reduced.
In this embodiment, the transmitting filter 200 and the receiving filter 300 are integrated on the same substrate 100, so that in the manufacturing process of the diplexer, the diplexer including a plurality of transmitting filters 200 and receiving filters 300 can be manufactured on the substrate 100 with a larger size at the same time, and dicing channels can be arranged between adjacent diplexers. Because the transmitting filter 200 and the receiving filter 300 are integrated on the same substrate 100, the transmitting filter 200 and the receiving filter 300 can be manufactured on the same substrate 100 at the same time, and the film structure can be shared, so that the integration level of the duplexer is further improved, and the size of the duplexer is reduced. In addition, because the transmitting filter 200 and the receiving filter 300 can be manufactured on the same substrate 100 at the same time, the manufacturing of the duplexer can be completed by adopting one photolithography plate and one set of process manufacturing flow, which is beneficial to reducing the manufacturing cost of the duplexer.
With continued reference to fig. 1 and 2, the duplexer further includes a sealing ring 830, the sealing ring 830 is disposed on the same side of the substrate 100 as the transmitting filter 200 and the receiving filter 300, the transmitting filter 200 and the receiving filter 300 share the sealing ring 830, and a sealing peripheral sealing frame 831 of the sealing ring 830 surrounds the transmitting filter 200 and the receiving filter 300. Specifically, the fewer the number of seal rings 830 of the diplexer, the simpler the seal structure, and accordingly, the sealing step for the diplexer can be simplified. In the duplexer of the present embodiment, the transmitting filter 200 and the receiving filter 300 share one sealing ring 830 structure, compared with the structure of preparing the transmitting filter 200 and the receiving filter 300 on different substrates 100 in the prior art (separate sealing ring 830 structures are needed to be prepared for the transmitting filter 200 and the receiving filter 300), the occupied area of the sealing ring 830 can be reduced, and the size of the duplexer can be further reduced; the transmit filter 200 and the receive filter 300 share the sealing ring 830, and the transmit filter 200 and the receive filter 300 are surrounded by the peripheral sealing frame 831 of the sealing ring 830, so that the structures of the transmit filter 200 and the receive filter 300 can be more compact, which is beneficial to further reducing the size of the diplexer.
The foregoing is the core idea of the present invention, and the following description will be given for clarity and completeness of description of the technical solution in the embodiment of the present invention by continuously referring to the accompanying drawings in the embodiment of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without making any inventive effort are intended to fall within the scope of the present invention.
Fig. 3 is a top view of another duplexer provided in an embodiment of the present invention, and referring to fig. 3, an optional transmission filter 200 includes a plurality of resonator units 10, and a reception filter 300 includes a plurality of resonator units 10;
the diplexer also includes a substrate 400;
the surface of the substrate 400 includes a first set area AR1 and a second set area AR2, and the first set area AR1 and the second set area AR2 do not overlap; the resonator units 10 of the transmission filter 200 are distributed in a concentrated manner in the first setting area AR1, and the resonator units 10 of the reception filter 300 are distributed in a concentrated manner in the second setting area AR 2.
The resonator units 10 of the transmitting filter 200 are gathered and distributed, and the resonator units 10 of the receiving filter 300 are gathered and distributed, which is closest to the position setting mode of the transmitting filter 200 and the receiving filter 300 of the duplex in the prior art, so that the structure of the photolithography plate for manufacturing the duplex in the embodiment is only slightly improved on the basis of the structure of the existing photolithography plate, and the manufacturing difficulty of the photolithography plate is not improved. In addition, the duplex of the embodiment is closest to the position setting mode of the transmitting filter 200 and the receiving filter 300 in the duplex in the prior art, so that the duplex can be ensured to have the same working performance as the duplex in the prior art.
Fig. 4 is a top view of another duplexer provided in the embodiment of the present invention, fig. 5 is a top view of another duplexer provided in the embodiment of the present invention, fig. 6 is a top view of another duplexer provided in the embodiment of the present invention, and referring to fig. 4 to 6, optionally, the sealing ring 830 further includes a separation structure 832, the separation structure 832 is connected to the peripheral sealing frame 831 and forms a first sub-sealing frame 833 and a second sub-sealing frame 834 with the peripheral sealing frame 831, the first sub-sealing frame 833 surrounds the transmitting filter 200, and the second sub-sealing frame 834 surrounds the receiving filter 300.
Specifically, in this embodiment, the sealing ring 830 further includes a separation structure 832, where the separation structure 832 and the peripheral sealing frame 831 form two sub-sealing frames, i.e., a first sub-sealing frame 831 and a second sub-sealing frame 832, the transmitting filter 200 is surrounded by the first sub-sealing frame 833, and the receiving filter 300 is surrounded by the second sub-sealing frame 834, so that the transmitting filter 200 and the receiving filter 300 are separated, and signal coupling and interference between the transmitting filter 200 and the receiving filter 300 can be avoided, mutual influence between the transmitting filter 200 and the receiving filter 300 is avoided, and the working performance of the duplexer is improved. In addition, the separation structure 832 of the sealing ring 830 shared by the first sub-sealing frame 833 and the second sub-sealing frame 834 can reduce the occupied area of the sealing ring 830 and reduce the size of the duplexer compared with the structure of preparing the transmitting filter 200 and the receiving filter 300 on different substrates 100 in the prior art (separate sealing ring 830 structures are required to be prepared for the transmitting filter 200 and the receiving filter 300).
With continued reference to fig. 3-6, the peripheral seal housing 831 may be a rectangular structure as shown in fig. 3 and 4, but the structures shown in fig. 3 and 4 are not limiting of the present invention, and in other alternative embodiments of the present invention, the peripheral seal housing 831 may be circular, diamond-shaped, irregularly shaped, etc.
Referring to fig. 4 to 6, the partition structure 832 may be a linear strip structure as shown in fig. 4 and 6, a fold line structure as shown in fig. 5, or an arc structure, which is not particularly limited herein. As for the extending direction of the partition structure 832, fig. 4 shows a case where the extending direction of the partition structure 832 is parallel to the short side of the peripheral sealing frame 831, and fig. 6 shows a case where the extending direction of the partition structure 832 is parallel to the long side of the peripheral sealing frame 831, in other alternative embodiments of the present invention, the partition structure 832 may extend in other directions, and the embodiment is not particularly limited herein.
Fig. 7 is a top view of another duplexer provided in an embodiment of the present invention, and referring to fig. 7, an optional transmission filter 200 includes at least one resonator unit 10, and a reception filter 300 includes at least one resonator unit 10;
the diplexer also includes a substrate 400;
The resonator units 10 of the transmission filter 200 and the resonator units 10 of the reception filter 200 are alternately distributed on the surface of the substrate 400.
The resonator units 10 of the transmitting filter 200 and the resonator units 10 of the receiving filter 200 are alternately distributed on the surface of the substrate 400, which may mean that the resonator units 10 of the transmitting filter 200 are not distributed in a certain fixed area on the surface of the substrate 400, and the resonator units 10 of the receiving filter 300 are not specifically distributed in a certain fixed area on the surface of the substrate 400. Alternatively, the resonator units 10 of the transmitting filter 200 and the resonator units 10 of the receiving filter 200 are alternately distributed on the surface of the substrate 400, which may refer to an area of a set area arbitrarily selected on the surface of the substrate 400, where the area includes both the resonator units 10 of the transmitting filter 200 and the resonator units 10 of the receiving filter 200. Alternatively, the set area is smaller than the area of the transmit filter 200 and smaller than the area of the receive filter 300.
Specifically, the resonator units 10 of the transmitting filter 200 and the resonator units 10 of the receiving filter 300 are alternately distributed on the surface of the substrate 400, so that the position setting of the resonator units 10 can be more flexible for the transmitting filter 200 and the receiving filter 300, and the setting of the transmitting filter 200 and the receiving filter 300 can be realized in a smaller area, which is beneficial to further reducing the size of the duplexer. For example, compared with the structure of the duplexer shown in fig. 4, the resonator unit 10 in the duplexer shown in fig. 7 may be disposed at the position of the partition structure in fig. 4, or may be disposed at the position of the corner formed by the partition structure and the peripheral sealing frame body, and the resonator unit 10 is disposed by fully utilizing the respective positions of the substrate surface, thereby being advantageous for reducing the size of the duplexer.
The resonator unit 10 generally includes an upper electrode, a lower electrode, and a piezoelectric unit between the upper electrode and the lower electrode, and the resonator unit 10 of the transmitting resonator 200 and the resonator unit 10 of the receiving resonator 300 are disposed to be interposed on the surface of the substrate, so that the resonator unit 10 of the transmitting resonator 200 and the resonator unit 10 of the receiving resonator 300 having the same thickness film structure (e.g., the upper electrode having the same thickness, or the lower electrode having the same thickness, or the piezoelectric unit having the same thickness) may be disposed in the same region, even though the resonator unit 10 of the transmitting resonator 200 and the resonator unit 10 of the receiving resonator 300 having the same thickness film structure are disposed in a concentrated manner, so that the film structure of the resonator unit having the same thickness film structure is manufactured in one process when the film structure of the resonator unit is manufactured, thereby simplifying the manufacturing process.
With continued reference to fig. 3-7, the transmit filter 200 and the receive filter 300 each optionally include a connection terminal 900 for enabling connection of the transmit filter 200 and the receive filter 300, respectively, to external circuitry.
Fig. 8 is a cross-sectional view of another duplexer provided in an embodiment of the present invention, and referring to fig. 8, optionally, the duplexer further includes a cover 840, where the cover 840 is located at a side of the sealing ring 830, the transmitting filter 200, and the receiving filter 300 away from the substrate 100; cover plate 840, seal 830 and substrate 100 form a sealed structure within which transmit filter 200 and receive filter 300 are located; and thus forms a package for the transmission filter 200 and the reception filter 300, ensuring good operation performance of the transmission filter 200 and the reception filter 300.
With continued reference to fig. 8, optionally, in the thickness direction y of the diplexer, the size of the seal ring 830 is greater than the size of the transmit filter 200 and the size of the seal ring 830 is greater than the size of the receive filter 300; and further, the sealing ring 830 may play a supporting role on the cover plate 840, so that the cover plate 840 will not contact with the transmitting filter 200 and the receiving filter 300, and the transmitting filter 200 and the receiving filter are located in a cavity structure formed by the cover plate 840 and the substrate 100, thereby ensuring good working performance of the transmitting filter 200 and the receiving filter 300.
With continued reference to fig. 8, the duplexer includes a substrate 100, and a lower electrode layer 500, a piezoelectric layer 600, and an upper electrode layer 700 stacked from the substrate 100;
wherein the lower electrode layer 500 includes the lower electrode 11 of each resonance unit 10, the piezoelectric layer 600 includes the piezoelectric unit 12 of each resonance unit 10, the upper electrode layer 700 includes the upper electrodes 13 of each resonance unit 10, and the upper electrodes 13 are separated from each other;
wherein the vertical projection of the lower electrode 11 of each resonator unit 10 onto the substrate 100 overlaps with the vertical projection of the corresponding upper electrode 13 onto the substrate 100, the piezoelectric unit 12 of the resonator unit 10 being located between the lower electrode 11 and the upper electrode 13 of the resonator unit 10.
Alternatively, the material of the upper electrode layer 700 and the material of the lower electrode layer 500 may be at least one of metals such as molybdenum, aluminum, tungsten, or other alloy materials, or may be a non-metal material such as doped polysilicon.
Alternatively, the deposition material of the piezoelectric layer 600 may be at least one of aluminum nitride, silicon oxide, and piezoelectric ceramic.
With continued reference to fig. 8, in an alternative embodiment of the present invention, the lower electrodes 11 of at least some of the resonator units 10 are separated from each other in the transmit filter 200 and the receive filter 300. Alternatively, the lower electrodes 11 of the resonator elements 10 are separated from each other.
Specifically, in the lower electrode, different electrodes are mutually separated, so that the mutual influence among different resonator units is reduced, and the working performance of the duplexer is improved.
With continued reference to fig. 8, optionally at least a portion of the piezoelectric elements 12 of the resonator element 10 are separated from one another. Alternatively, the piezoelectric units 12 of each resonator unit 10 are separated from each other.
Specifically, the piezoelectric units 12 of the different resonator units 10 are separated from each other, which is beneficial to reducing the mutual influence between the different resonator units 10, and further improving the working performance of the duplexer.
With continued reference to fig. 8, in an alternative embodiment of the present invention, each lower electrode 11 is separated from each other, each upper electrode 13 is separated from each other, and each piezoelectric unit 12 is separated from each other, so that a certain interval is formed between two adjacent resonator units, and a sidewall cavity structure is formed between the two adjacent resonator units, thereby reducing the influence of shear waves and improving the quality factor.
Fig. 9 is a cross-sectional view of another duplexer provided in an embodiment of the present invention, and referring to fig. 9, alternatively, the piezoelectric units 12 of the respective resonator units 10 are continuous with each other
Specifically, the piezoelectric units 12 of each resonator unit 10 are continuous with each other, so that patterning of the piezoelectric layer 600 is not required, and the process steps for manufacturing the duplexer are advantageously saved, so that the manufacturing flow is simplified, and the production efficiency is improved.
In the above embodiment, the thicknesses of the lower electrode layer 500, the piezoelectric layer 600, and the upper electrode layer 700 are uniform, that is, the thicknesses of the upper electrodes 13 may be the same, the thicknesses of the piezoelectric units of the resonator units 10 may be the same, and the thicknesses of the lower electrodes 11 may be the same. In other alternative embodiments of the present invention, the thicknesses of the lower electrode layer 500, the piezoelectric layer 600, and the upper electrode layer 700 may be non-uniform, and the embodiment is not particularly limited herein.
Fig. 10 is a cross-sectional view of another duplexer provided in an embodiment of the present invention, and referring to fig. 10, optionally, the duplexer further includes a mass loading layer 1000, wherein the mass loading layer 1000 is disposed at a side of the upper electrode layer 700 away from the piezoelectric layer 600; the mass-loading layer 1000 includes at least one mass-loading unit 1010, the mass-loading unit 1010 corresponding to the upper electrode 13 in the thickness direction of the substrate 100; the at least one resonator unit 10 comprises a mass-loading unit 1010.
Specifically, when the thicknesses of the upper electrodes 13 and the piezoelectric units 12 and the lower electrodes 11 of the respective resonator units 10 are the same, the resonance frequency of the resonator unit 10 may be adjusted by adjusting the thickness of the mass load unit 1010 of the resonator unit 10. Optionally, the material of the mass loading layer may be one of metals such as molybdenum, aluminum, tungsten, or other alloy materials, or may be a non-metal material such as doped polysilicon.
In other alternative embodiments, the lower electrode of the resonator unit comprised by the transmitting filter is different from the lower electrode of the resonator unit comprised by the receiving filter in thickness;
and/or the thickness of the upper electrode of the resonator unit included in the transmitting filter is different from that of the upper electrode of the resonator unit included in the receiving filter;
and/or the thickness of the piezoelectric unit of the resonator unit included in the transmitting filter is different from that of the piezoelectric unit of the resonator unit included in the receiving filter;
and/or the mass-loading unit of the resonator unit included in the transmitting filter is different from the piezoelectric unit of the mass-loading unit included in the receiving filter in thickness; the resonator unit of the transmitting filter and the resonator unit of the receiving filter can be made to be different in performance, and thus the situation of a duplexer having different performance requirements for the resonator unit of the transmitting filter and the resonator unit of the receiving filter can be satisfied. Fig. 11 is a cross-sectional view of another duplexer provided in an embodiment of the present invention, and referring to fig. 11, fig. 11 shows a case where the thickness (first thickness h 1) of the lower electrode 11 of the resonator unit 10 in the transmitting filter 200 and the thickness (first thickness h 2) of the lower electrode 11 of the resonator unit 10 in the receiving filter 300 may be different.
On the basis of the above embodiment, alternatively, resonator units including the set structures of the same thickness are distributed in an aggregated manner; wherein, the setting structure is upper electrode, bottom electrode, piezoelectric element or mass load unit.
Taking as an example a resonator element aggregation distribution including piezoelectric elements of the same thickness. When the piezoelectric unit is prepared, a whole piezoelectric material layer with uniform thickness is firstly required to be formed, then the piezoelectric material layer with uniform thickness is thinned by adopting an etching process or a stripping process, and because the piezoelectric material layer is required to be exposed in the thinning process, a mask plate is required to be used in the exposure process, the mask plate is provided with mask patterns, the mask plates with different mask patterns are adopted to expose the piezoelectric material layer, and the patterns of the formed piezoelectric layer are different after the etching or stripping process is completed. The resonator units containing the piezoelectric units with the same thickness are distributed in an aggregation way, so that the mask patterns of the mask plate can be communicated with each other to form a whole at the positions of the piezoelectric units corresponding to the resonator units distributed in an aggregation way, namely, the positions of the piezoelectric units corresponding to the resonator units distributed in an aggregation way are provided with larger holes, and the preparation difficulty of the mask plate is facilitated to be simplified; and a plurality of interconnected piezoelectric units with the same thickness can be manufactured in the same channel, which is beneficial to simplifying the manufacturing process. The resonator element aggregate distribution including the upper electrodes of the same thickness, or the resonator element aggregate distribution including the lower electrodes of the same thickness, or the resonator element aggregate distribution including the mass load elements of the same thickness has the same effects as described above, and will not be described in detail.
Optionally, the diplexer further comprises a seed layer between the lower electrode layer and the substrate.
Wherein, the material of the seed layer can be selected to be aluminum nitride. The seed layer may be used to change the crystal orientation of the electrode layer.
With continued reference to fig. 8-11, optionally, the surface of the substrate 100 adjacent to the lower electrode layer 500 includes a plurality of grooves, the grooves are in one-to-one correspondence with the resonator units 10, the sidewalls and bottom surfaces of the grooves are in non-contact with the lower electrode layer 500, and a cavity structure is formed between the lower electrode layer 500 and the grooves as a cavity of the resonator unit 10;
optionally, the duplexer further includes a conductive via 810 and a connection member 820, wherein the connection member 820 is disposed between the substrate 400 and the substrate 100, and the conductive via 810 is electrically connected to the connection member 820 and the lower electrode layer 500, respectively.
The grooves of the surface of the substrate 100 near the lower electrode may be obtained by patterning the surface of the substrate 100, and each groove forms a cavity structure with the lower electrode layer 500, and the cavity structure serves as a cavity of the resonator. In the duplexer of this embodiment, the transmitting filter 200 and the receiving filter 300 may share the conductive hole and the connecting piece 820, compared with the structure of preparing the transmitting filter 200 and the receiving filter 300 on different substrates 100 in the prior art (separate conductive holes 810 and connecting pieces 820 are needed to be prepared for the transmitting filter 200 and the receiving filter 300), the occupied area of the conductive holes and the connecting pieces 820 can be reduced, and the size of the duplexer can be further reduced.
The embodiment of the invention also provides a manufacturing method of the duplexer, which is used for manufacturing the duplexer provided by any embodiment of the invention. Fig. 12 is a flowchart of a method for manufacturing a duplexer according to an embodiment of the present invention, and referring to fig. 12, the method for manufacturing a duplexer includes:
s01, manufacturing a transmitting filter and a receiving filter on the same substrate;
s02, a sealing ring is arranged on one side of the substrate, on which the transmitting filter and the receiving filter are manufactured, and comprises a peripheral sealing frame body arranged on the periphery of the transmitting filter and the receiving filter, and the peripheral sealing frame body is sealed to surround the transmitting filter and the receiving filter.
According to the manufacturing method of the duplexer, the transmitting filter and the receiving filter are integrated on the same substrate, so that the integration level of the duplexer can be improved, and the size of the duplexer is reduced. Because the transmitting filter and the receiving filter are integrated on the same substrate, the transmitting filter and the receiving filter can be manufactured on the same substrate at the same time, and the film structure can be shared, so that the integration level of the duplexer is further improved, and the size of the duplexer is further reduced. Because the transmitting filter and the receiving filter can be manufactured on the same substrate at the same time, the manufacturing of the duplexer can be completed by adopting a photoetching plate and a set of process manufacturing flow, and the manufacturing cost of the duplexer is reduced. The transmitting filter and the receiving filter share a sealing ring structure, so that the occupied area of the sealing ring can be reduced, and the size of the duplexer is further reduced; the transmitting filter and the receiving filter are surrounded by the peripheral sealing frame body of the sealing ring, and the structures of the transmitting filter and the receiving filter can be more compact, which is beneficial to further reducing the size of the duplexer.
On the basis of the above embodiment, optionally, the transmit filter and the receive filter are fabricated on the same substrate, including:
forming a resonator unit of a transmitting filter at a first preset position of a substrate;
forming a resonator unit of the receiving filter at a second preset position of the substrate;
wherein the first preset position and the second preset position are alternately distributed.
Specifically, before the duplexer is manufactured, the positions of the resonator units of the transmitting filter and the resonator units of the receiving filter on the substrate can be determined first, wherein the first preset position corresponds to the position of the resonator unit of the transmitting filter, the second preset position corresponds to the position of the resonator unit of the transmitting filter, and the first preset position and the second preset position are alternately distributed, so that the resonator units of the transmitting filter and the resonator units of the receiving filter can be alternately distributed after the preparation is finished, and the setting of the transmitting filter and the receiving filter can be realized in a smaller area, thereby being beneficial to further reducing the size of the duplexer. The resonator unit of the transmitting filter and the resonator unit of the receiving filter may be prepared in different process steps or may be prepared in the same process step, and the embodiment is not particularly limited herein.
Fig. 13 is a flowchart of another method for manufacturing a duplexer according to an embodiment of the present invention, and fig. 14 to 19 are schematic structural views of different stages in a process of manufacturing a duplexer, and referring to fig. 13 to 19, the method for manufacturing a duplexer includes:
s011, forming a plurality of grooves on the surface of the substrate, and filling sacrificial materials in the grooves;
fig. 14 is a schematic view of the structure after forming grooves in the surface of the substrate and filling the grooves with a sacrificial material. Alternatively, the forming process of the groove 03 may include gluing, exposure and development, dry etching, and wet etching. The filling of the sacrificial material may be by a deposition process and after the deposition of the sacrificial material in the recess, the surface of the sacrificial material may be kept flush with the surface of the substrate 100 by a planarization process (which may be, for example, a chemical mechanical polishing process). Alternatively, the sacrificial material may be at least one of a phosphorus oxide, a nitride such as silicon nitride, and a metal oxide.
S012, forming a lower electrode layer comprising a plurality of lower electrodes on one side of the surface of the substrate;
fig. 15 is a schematic view of a structure after forming a lower electrode layer including a plurality of lower electrodes on a surface of a substrate, wherein a lower electrode layer 500 is formed on a surface of the substrate 100 having grooves. The lower electrode material layer having a uniform thickness may be first formed, for example, a deposition process may be used to form the material layer having a uniform thickness, and then the lower electrode material layer having a uniform thickness may be patterned to obtain the lower electrode layer 500 of the plurality of lower electrodes.
Wherein each lower electrode can have a uniform thickness or a non-uniform thickness. S012 may include S0121 and S0122 to form a lower electrode layer including lower electrodes having different thicknesses as follows. S0121, uniformly depositing a material of the whole lower electrode layer on one side of the surface of the substrate to form an electrode material layer with uniform thickness;
s0122, forming a lower electrode layer comprising lower electrodes with different thicknesses by adopting an etching process or a stripping process on the lower electrode material layer;
alternatively, when the lower electrode layer is formed by an etching process or a stripping process, the lower electrodes with the same thickness are gathered and distributed by controlling the process parameters of the etching process or the stripping process.
Specifically, the etching process may include performing photoresist (photoresist) coating, exposing, developing, etching, photoresist removing and cleaning on a surface of the side of the lower electrode material layer having a uniform thickness away from the substrate. The Lift off process may include gumming (photoresist) on the surface of the side of the uniform thickness lower electrode material layer remote from the substrate, exposing, developing, redeposition of the lower electrode material layer, photoresist removal, and cleaning. In the exposure process, a mask is required, in this embodiment, the process parameter of the etching process or the process parameter of the stripping process may be the shape of an opening pattern of the mask, specifically, the mask patterns of the mask may be mutually communicated to form a whole at the position corresponding to the piezoelectric units of the resonator units distributed in an aggregation manner, that is, the position corresponding to the piezoelectric units of the resonator units distributed in an aggregation manner, the opening of the mask may be relatively large, which is beneficial to simplifying the preparation difficulty of the mask; and a plurality of interconnected piezoelectric units with the same thickness can be manufactured in the same channel, which is beneficial to simplifying the manufacturing process.
S013, forming a piezoelectric layer comprising a plurality of piezoelectric units on one side of the lower electrode layer away from the substrate;
fig. 16 is a schematic structural view after forming a piezoelectric layer including a plurality of piezoelectric units on a side of a lower electrode layer away from a substrate. The process of preparing the piezoelectric layer 600 including the plurality of piezoelectric units 12 may be the same as that of the lower electrode layer 500, and will not be described again here.
S014 forming an upper electrode layer including a plurality of upper electrodes on a side of the piezoelectric layer away from the substrate to form a plurality of resonator units including upper electrodes, lower electrodes, piezoelectric units and upper electrodes;
fig. 17 is a schematic structural view after forming an upper electrode layer including a plurality of upper electrodes on a side of the piezoelectric layer away from the substrate. The process of preparing the upper electrode layer 700 including the plurality of upper electrodes 13 may be the same as that of preparing the lower electrode layer 500, and will not be described again here. .
Optionally, after S014, further comprising S015, forming a mass-loading layer including at least one mass-loading unit on a side of the upper electrode layer away from the substrate, the mass-loading unit corresponding to the upper electrode in the thickness direction of the substrate;
fig. 18 is a schematic structural view after forming a mass-loaded layer on a side of the upper electrode layer away from the substrate. The process for preparing the mass-loaded layer 1000 including the plurality of mass-loaded cells 1010 may be the same as the process for preparing the lower electrode layer 500, and will not be described again.
S016, forming a via hole penetrating through the mass load layer, the upper electrode layer, the piezoelectric layer and the lower electrode layer at a position opposite to the groove, and releasing the sacrificial material through the via hole.
FIG. 19 is a schematic view of the structure after release of the sacrificial material.
The deposition process in the above steps may be physical vapor deposition, chemical vapor deposition, epitaxy, and the like, and the embodiment is not limited herein.
On the basis of the technical scheme, after S016, the method can further comprise the steps of frequency trimming, bonding of the cover plate, forming of conductive through holes, welding and packaging between conductive through hole substrates and the like.
The embodiment of the invention also provides a multiplexer which comprises the duplexer provided by any embodiment of the invention.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (16)
1. A duplexer, comprising: the device comprises a transmitting filter, a receiving filter and a sealing ring; the transmitting filter and the receiving filter are integrated on the same substrate;
the sealing ring, the transmitting filter and the receiving filter are arranged on the same side of the substrate; the transmitting filter and the receiving filter share the sealing ring, the sealing ring comprises a peripheral sealing frame body arranged at the periphery of the transmitting filter and the receiving filter, and the peripheral sealing frame body surrounds the transmitting filter and the receiving filter;
the transmit filter includes a plurality of resonator units, and the receive filter includes a plurality of resonator units; the diplexer further comprises a substrate;
the resonator units of the transmitting filter and the resonator units of the receiving filter are alternately distributed on the surface of the substrate;
the duplexer includes the said substrate, lower electrode layer, piezoelectric layer and upper electrode layer that are laminated and set up from the said substrate; wherein the lower electrode layer includes a lower electrode of each of the resonator units, the piezoelectric layer includes a piezoelectric unit of each of the resonator units, and the upper electrode layer includes an upper electrode of each of the resonator units; the duplexer further comprises a mass load layer, wherein the mass load layer is arranged on one side of the upper electrode layer, which is far away from the piezoelectric layer; the mass loading layer comprises at least one mass loading unit, and the mass loading unit corresponds to the upper electrode in the thickness direction of the substrate; at least one of the resonator units comprises the mass loading unit; forming a resonator unit of the emission filter at a first preset position of the substrate; forming a resonator unit of the receiving filter at a second preset position of the substrate; wherein the first preset position and the second preset position are alternately distributed;
The resonator units comprising the same thickness of the set structure are distributed in an aggregation way; wherein the setting structure is the upper electrode, the lower electrode, the piezoelectric unit or the mass load unit.
2. The duplexer of claim 1, further comprising a cover plate located on a side of the seal ring, the transmit filter, and the receive filter remote from the substrate;
the cover plate, the sealing ring and the substrate form a sealing structure, and the transmitting filter and the receiving filter are positioned in the sealing structure.
3. The duplexer according to claim 2, wherein in a thickness direction of the duplexer, a size of the seal ring is larger than a size of the transmit filter, and a size of the seal ring is larger than a size of the receive filter.
4. The duplexer of claim 1, wherein,
the upper electrodes are separated from each other.
5. The duplexer as claimed in claim 4, wherein,
in the transmitting filter and the receiving filter, at least part of the lower electrodes of the resonator units are separated from each other.
6. The duplexer of claim 4, wherein lower electrodes of the resonator units are separated from each other.
7. The duplexer as claimed in claim 4, wherein,
the piezoelectric units of the resonator units are continuous with each other.
8. The duplexer as claimed in claim 4, wherein,
at least part of the piezoelectric units of the resonator units are separated from each other.
9. The duplexer as claimed in claim 4, wherein,
the piezoelectric units of the resonator units are separated from each other.
10. The duplexer according to claim 4, wherein a thickness of a lower electrode of the resonator unit included in the transmission filter is different from a thickness of a lower electrode of the resonator unit included in the reception filter;
and/or the thickness of the upper electrode of the resonator unit included in the transmitting filter is different from that of the upper electrode of the resonator unit included in the receiving filter;
and/or the thickness of the piezoelectric unit of the resonator unit included in the transmitting filter is different from the thickness of the piezoelectric unit of the resonator unit included in the receiving filter;
and/or the mass-loading unit of the resonator unit included in the transmitting filter is different from the mass-loading unit of the resonator unit included in the receiving filter in thickness.
11. The duplexer of claim 4, further comprising a seed layer between the lower electrode layer and the substrate.
12. The duplexer as claimed in claim 4, wherein a surface of the substrate adjacent to the lower electrode layer includes a plurality of grooves, the grooves are in one-to-one correspondence with the resonator units, side walls and bottom surfaces of the grooves are not in contact with the lower electrode layer, and a cavity structure is formed between the lower electrode layer and the grooves as a cavity of the resonator units.
13. The duplexer of claim 12, further comprising a conductive via and a connection member, wherein the connection member is disposed between the base plate and the substrate, the conductive via being electrically connected to the connection member and the lower electrode layer, respectively.
14. A method of manufacturing a duplexer, comprising:
manufacturing a transmitting filter and a receiving filter on the same substrate;
a sealing ring is arranged on one side of the substrate, on which the transmitting filter and the receiving filter are manufactured, and comprises a peripheral sealing frame body arranged on the peripheries of the transmitting filter and the receiving filter, and the peripheral sealing frame body surrounds the transmitting filter and the receiving filter;
The manufacturing of the transmitting filter and the receiving filter on the same substrate comprises the following steps:
forming a plurality of grooves on the surface of the substrate, and filling sacrificial materials in the grooves;
forming a lower electrode layer including a plurality of lower electrodes on one side of a surface of the substrate;
forming a piezoelectric layer including a plurality of piezoelectric units on a side of the lower electrode layer away from the substrate;
forming an upper electrode layer including a plurality of upper electrodes on a side of the piezoelectric layer away from the substrate to form a plurality of resonator units including the lower electrodes, the piezoelectric units, and the upper electrodes;
forming a via hole penetrating through the upper electrode layer, the piezoelectric layer and the lower electrode layer at a position right opposite to the groove, and releasing the sacrificial material through the via hole;
after forming the upper electrode layer on the side of the piezoelectric layer away from the substrate, the method further comprises:
forming a mass loading layer comprising at least one mass loading unit on one side of the upper electrode layer away from the substrate, wherein the mass loading unit corresponds to the upper electrode in the thickness direction of the substrate;
the resonator units comprising the same thickness of the set structure are distributed in an aggregation way; wherein the set structure is the upper electrode, the lower electrode, the piezoelectric unit or the mass load unit; the manufacturing of the transmitting filter and the receiving filter on the same substrate comprises the following steps:
Forming a resonator unit of the emission filter at a first preset position of the substrate;
forming a resonator unit of the receiving filter at a second preset position of the substrate;
the first preset position and the second preset position are alternately distributed.
15. The method of fabricating a duplexer of claim 14, wherein forming a lower electrode layer including a plurality of lower electrodes on one side of a surface of the substrate comprises:
uniformly depositing a lower electrode material layer with uniform thickness on one side of the surface of the substrate;
and forming the lower electrode layer comprising the lower electrodes with different thicknesses by adopting an etching process or a stripping process on the lower electrode material layer.
16. A multiplexer comprising the diplexer of any one of claims 1-13.
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| KR100666693B1 (en) * | 2004-11-23 | 2007-01-11 | 삼성전자주식회사 | Monolithic duplexer |
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| US8680944B2 (en) * | 2011-01-13 | 2014-03-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Single-chip duplexer with isolation shield between transmit and receive filters |
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