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CN113037233A - Radio frequency power amplifying circuit and electronic equipment - Google Patents

Radio frequency power amplifying circuit and electronic equipment Download PDF

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Publication number
CN113037233A
CN113037233A CN202110406085.3A CN202110406085A CN113037233A CN 113037233 A CN113037233 A CN 113037233A CN 202110406085 A CN202110406085 A CN 202110406085A CN 113037233 A CN113037233 A CN 113037233A
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China
Prior art keywords
power
bias
voltage
module
resistor
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Chinese (zh)
Inventor
柯庆福
钟林
孙凯
郑新年
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Jinjiang Sanwu Microelectronics Co ltd
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Jinjiang Sanwu Microelectronics Co ltd
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Priority to CN202110406085.3A priority Critical patent/CN113037233A/en
Publication of CN113037233A publication Critical patent/CN113037233A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention provides a radio frequency power amplifying circuit, comprising: the device comprises a power amplifier, a power detection module, a feedback regulation module and a bias module; the first end of the power amplifier is connected with a first voltage source, the second end of the power amplifier is grounded, and the bias module is connected between the control end and the first end of the power amplifier so as to control the bias voltage of the power amplifier; the control end of the power amplifier is directly or indirectly connected with the signal input end so as to access a radio frequency signal through the signal input end; the power detection module is configured to acquire a power detection signal, wherein the power detection signal is characterized by the output power of the power amplifier; the output end of the power detection module is connected with the input end of the feedback regulation module so as to feed the power detection signal back to the feedback regulation module; the output end of the feedback adjusting module is connected with the bias module so as to respond to the power detection signal and adjust the bias voltage.

Description

Radio frequency power amplifying circuit and electronic equipment
Technical Field
The present invention relates to the field of radio frequency signal processing, and in particular, to a radio frequency power amplifying circuit and an electronic device.
Background
The radio frequency power amplifier circuit generally employs a Heterojunction Bipolar Transistor (HBT), a complementary metal oxide semiconductor transistor (CMOS), a High Electron Mobility Transistor (HEMT), or the like as an amplifying transistor, referred to as a power transistor, which may also be understood as a power amplifier. 5G, wifi6, etc. put high demands on the performance of the rf power amplifier, such as linearity and efficiency.
In the radio frequency power amplifying circuit, a bias module can be used for providing bias voltage for a power amplifier, in the prior art, the bias voltage can be adjusted through external intervention, however, the adjustment mode based on the external intervention cannot accurately and timely adapt to the actual working state of the power amplifier, and further, the defects of low amplification efficiency and the like can be brought.
Disclosure of Invention
The invention provides a radio frequency power amplifying circuit and electronic equipment, and aims to solve the problem of low amplification efficiency.
According to a first aspect of the present invention, there is provided a radio frequency power amplifying circuit comprising: the device comprises a power amplifier, a power detection module, a feedback regulation module and a bias module;
the first end of the power amplifier is connected with a first voltage source, the second end of the power amplifier is grounded, and the bias module is connected between the control end and the first end of the power amplifier so as to control the bias voltage of the power amplifier; the control end of the power amplifier is directly or indirectly connected with the signal input end so as to access a radio frequency signal through the signal input end;
the power detection module is configured to acquire a power detection signal, wherein the power detection signal is characterized by the output power of the power amplifier;
the output end of the power detection module is connected with the input end of the feedback regulation module so as to feed the power detection signal back to the feedback regulation module;
the output end of the feedback adjusting module is connected with the bias module so as to respond to the power detection signal and adjust the bias voltage.
Optionally, the power detection module is configured to:
raising a voltage of the power detection signal when the output power is raised;
reducing a voltage of the power detection signal when the output power is reduced;
the feedback adjustment module is configured to:
when the voltage of the power detection signal is higher than the lowest voltage threshold value, the bias voltage is controlled to be larger as the voltage of the power detection signal is larger and smaller as the voltage of the power detection signal is smaller.
Optionally, the feedback adjusting module includes a differential amplifier, and the bias module includes an amplifying tube and a bias power tube; the first end and the second end of the bias power tube are connected between the control end and the first end of the power amplifier, the first end of the bias power tube is connected with the first voltage source, the second end of the bias power tube is directly or indirectly connected with the control end of the power amplifier, and the control end of the bias power tube is directly or indirectly connected with the first end of the power amplifier tube and the second voltage source;
a first input end of the differential amplifier is connected with a reference voltage, and a second input end of the differential amplifier is connected with an output end of the power detection module to obtain the power detection signal;
the differential amplifier is used for:
when the voltage of the power detection signal is lower than the lowest voltage threshold value, the amplifying tube is driven to be completely opened;
when the voltage of the power detection signal is higher than the lowest voltage threshold, the opening amplitude of the amplifying tube is reduced in response to the voltage rise of the power detection signal; and: responding to the voltage reduction of the power detection signal, and increasing the opening amplitude of the amplifying tube;
wherein the bias voltage is negatively related to the turn-on amplitude of the amplifier tube.
Optionally, the bias module further includes a bias first resistor, and the first end of the amplifier tube is connected to the control end of the bias power tube through the bias first resistor, and is directly or indirectly connected to the second voltage source through the bias first resistor.
Optionally, the bias module further includes a bias second resistor, a bias third resistor, a first power tube, a second power tube, and a bias capacitor;
the first end of the bias second resistor is connected with the second voltage source, the second end of the bias second resistor is connected with the control end of the bias power tube, the first end of the first power tube is connected with the control end of the bias power tube, the second end of the first power tube is connected with the first end of the second power tube, the second end of the second power tube is grounded, the first end or the second end of the first power tube is connected with the control end of the first power tube, the first end or the second end of the second power tube is connected with the control end of the second power tube, the first end of the bias capacitor is connected with the control end of the bias power tube, and the second end of the bias capacitor is grounded.
Optionally, the feedback adjustment module further includes a first voltage-dividing resistor and a second voltage-dividing resistor, where the first voltage-dividing resistor and the second voltage-dividing resistor are connected in series and then connected between the second voltage source and ground, and a first input terminal of the differential amplifier is connected between the first voltage-dividing resistor and the second voltage-dividing resistor, so as to acquire a voltage at a corresponding position as the reference voltage.
Optionally, the power detection module includes a first capacitor, a first resistor, and a second resistor;
the first end access detection voltage source that detects first resistance, the second end connection that detects first resistance detect the first end of second resistance, the second end that detects the second resistance is direct or indirect ground connection, the first end that detects first electric capacity is direct or indirect connection signal input part, the second end that detects first electric capacity is connected to detect first resistance with detect between the second resistance, the input of feedback regulation module is direct or indirect connection to detect first resistance with detect between the second resistance.
Optionally, the power detection module further includes a first unidirectional conducting device and a second unidirectional conducting device; the first unidirectional conduction device is connected between the detection second resistor and the ground, the negative electrode of the first unidirectional conduction device is grounded, the negative electrode of the second unidirectional conduction device is connected with the input end of the feedback regulation module, and the positive electrode of the second unidirectional conduction device is connected between the detection first resistor and the detection second resistor.
Optionally, the power detection module further includes a third detection resistor and a second detection capacitor;
the first end of the third detection resistor and the first end of the second detection capacitor are both connected to the input end of the feedback regulation module; and the second end of the third detection resistor and the second end of the second detection capacitor are both grounded.
According to a second aspect of the present invention, there is provided an electronic device comprising the radio frequency power amplifying circuit according to the first aspect and its alternatives.
In the radio frequency power amplifying circuit and the electronic device provided by the invention, the power detection module detects and feeds back the output power of the power amplifier, and the feedback adjusting module adjusts the bias voltage based on the detection result, so that the following effects can be ensured: the adjustment result of the bias voltage can be accurately adapted to the change of the output power of the power amplifier and then the efficiency of the power amplifier can be effectively improved through the automatic adaptive change (namely continuous change) of the bias point.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a first schematic diagram illustrating an RF power amplifier circuit according to an embodiment of the present invention;
FIG. 2 is a second schematic diagram of an RF power amplifier circuit according to an embodiment of the present invention;
FIG. 3 is a third schematic diagram of an RF power amplifier circuit according to an embodiment of the present invention;
FIG. 4 is a fourth exemplary schematic diagram of an RF power amplifier circuit according to an embodiment of the present invention;
fig. 5 is a circuit diagram of an rf power amplifier circuit according to an embodiment of the invention.
Description of reference numerals:
1-a power detection module;
2-a bias module;
3-a feedback regulation module;
t0-power amplifier;
c0 — input capacitance;
a-a differential amplifier;
r31 — first divider resistance;
r32-second voltage dividing resistor;
t21-amplifier tube;
t22-bias power tube;
t23-first power tube;
t24-second power tube;
r21-biasing the first resistor;
r22-biasing the second resistor;
r23-biasing the third resistor;
an L-inductor;
r11 — sense a first resistance;
r12-sense a second resistance;
r13-sense a third resistance;
c11 — detecting a first capacitance;
c12 — detecting a second capacitance;
d11 — first diode;
d12-second diode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The technical solution of the present invention will be described in detail below with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.
Referring to fig. 1, the rf power amplifying circuit includes: the power amplifier T0, the power detection module 1, the feedback adjustment module 3 and the bias module 2.
The first end of the power amplifier T0 is connected with a first voltage source vsup, the second end of the power amplifier T0 is grounded, and the bias module 2 is connected between the control end and the first end of the power amplifier T0 to control the bias voltage of the power amplifier T0; the control terminal of the power amplifier T0 is directly or indirectly connected to the signal input terminal to access the radio frequency signal RFin through the signal input terminal.
The power amplifier T0 may be any device or combination of devices that may have a signal amplification function, in the illustrated example, the power amplifier T0 may employ an NPN transistor, a control terminal of the NPN transistor is a base of the NPN transistor, a first terminal of the NPN transistor is a collector, and a second terminal of the NPN transistor is an emitter, in other examples, any transistor such as a PNP transistor, an HBT transistor, a CMOS transistor, and a HEMT transistor may be employed as the power amplifier, in other examples, the number of the employed transistors may also be multiple, and further, the multiple transistors may be connected in any manner such as cascade connection and/or series connection.
The power detection module 1 is connected to the control terminal of the power amplifier T0 to detect a power detection signal indicative of the output power of the power amplifier T0.
In other examples, the power detection module 1 may also be directly or indirectly connected to at least one other terminal (e.g., the second terminal) of the power amplifier T0, so as to collect the corresponding output power.
The output end of the power detection module 1 is connected with the input end of the feedback regulation module 3 so as to feed the power detection signal back to the feedback regulation module 3; in some schemes, the power may be characterized by the voltage of the power detection signal, and in other schemes, the power may be characterized by other information such as current and frequency.
The output end of the feedback adjusting module 3 is connected with the bias module 2 to respond to the power detection signal and adjust the bias voltage. The feedback adjusting module 3 may be any circuit module capable of adjusting the bias voltage provided by the bias module 2, and may be a feedback adjusting module capable of arbitrarily changing to achieve the purpose according to different bias modules.
In the above scheme, the power detection module detects and feeds back the output power of the power amplifier, and the feedback adjustment module adjusts the bias voltage based on the detection result, so that the following can be ensured: the adjustment result of the bias voltage can be accurately adapted to the change of the output power of the power amplifier and then the efficiency of the power amplifier can be effectively improved through the automatic adaptive change (namely continuous change) of the bias point.
In other schemes different from the present invention, the power amplifier circuit may be configured to have two modes, i.e., a low power mode and a high power mode, and at this time, the switching of the modes may be realized by changing the external bias voltage. Compared with the prior art, the scheme of the invention can continuously adjust in response to the change of the output power, and meets the actual adjustment requirement in a fine, precise, accurate and timely manner.
In one embodiment, when the output power is characterized by the voltage of the power detection signal, the following steps are performed: the power detection module 1 is configured to:
raising a voltage of the power detection signal when the output power is raised;
reducing a voltage of the power detection signal when the output power is reduced;
the feedback regulation module 3 is configured to:
when the voltage of the power detection signal is higher than the lowest voltage threshold value, the bias voltage is controlled to be larger as the voltage of the power detection signal is larger and smaller as the voltage of the power detection signal is smaller. The change therein can be understood, for example, as a linear change.
Correspondingly, when the voltage of the power detection signal is lower than the lowest voltage threshold, the bias voltage can be controlled to be always at a lower voltage value and not to change along with the voltage change of the power detection signal.
Therefore, in the above scheme, a feedback control regulation path is formed based on the output power, the power detection signal and the bias voltage of the power detection module 1 and the feedback regulation module 3, and under the regulation path, the above mentioned control logic can be realized, and the timely and accurate response of the bias voltage along with the output power is realized.
To achieve the above process, in one embodiment, the feedback adjusting module includes a differential amplifier a, and the bias module 2 includes an amplifying transistor T21 and a bias power transistor T22.
The first end and the second end of the bias power tube T22 are connected between the control end and the first end of the power amplifier T0 (the first end is the end that needs to be connected to the first voltage source vsup), the first end of the bias power tube T22 is connected to the first voltage source vsup, the second end of the bias power tube T22 is directly or indirectly connected to the control end of the power amplifier T0 (for example, the control end of the power amplifier T0 may be connected through a bias third resistor R23), and the control end of the bias power tube T22 is directly or indirectly connected to the first end of the power amplifier tube T0 and the second voltage source vref 1.
The amplifying tube T21 may be a power tube capable of amplifying an input signal, in the illustrated example, the amplifying tube T21 may be a transistor (e.g., NPN transistor), and in other examples, other transistors may be used to implement the amplifying tube.
The first input end of the differential amplifier A is connected with a reference voltage, and the second input end of the differential amplifier A is connected with the output end of the power detection module 1 to obtain the power detection signal.
In other examples, the first input terminal may also be an inverting input terminal, and the first input terminal may also be a non-inverting input terminal. By means of the differential amplifier a, a differential operation of the two input terminals can be achieved, and furthermore, the voltage of the output signal of the differential amplifier a can be matched to the difference between the voltages of the two input terminals.
The differential amplifier A is used for:
when the voltage of the power detection signal is lower than the lowest voltage threshold, driving the amplifying tube T21 to be fully opened; taking fig. 2, fig. 3 and fig. 5 as an example, when the voltage of the power detection signal is lower than the lowest voltage threshold, the difference between the voltages of the two input terminals is large, the output voltage of the differential amplifier a is high, and at this time, the amplifying transistor T21 can be driven to be fully turned on.
The differential amplifier a is further configured to:
when the voltage of the power detection signal is higher than the lowest voltage threshold, the opening amplitude of the amplifying tube is reduced in response to the voltage rise of the power detection signal; and: responding to the voltage reduction of the power detection signal, and increasing the opening amplitude of the amplifying tube;
wherein the bias voltage is negatively related to the turn-on amplitude of the amplifier tube, and the bias voltage may become higher when the turn-on amplitude is decreased and may become lower when the turn-on amplitude is increased.
In a specific example, when the signal of the power amplifier is small (the output power is small), the voltage of the power detection signal is also small, and thus the second input terminal (i.e. the V-terminal, which can also be understood as an inverting input terminal) of the differential amplifier a is also small, and the output voltage of the differential amplifier a is high, the amplifying transistor T21 is turned on, and the bias voltage of the power amplifier is pulled down.
When the output power is higher, the voltage of the power detection signal is higher, so that the second input end (i.e., the V-end, which can also be understood as an inverting input end) of the differential amplifier a is also higher, and at this time, the output voltage of the differential amplifier a is lower, which reduces the bias of the amplifying tube T21, so that the amplifying function of the amplifying tube T21 is weakened (i.e., the starting amplitude is reduced), and correspondingly, the bias voltage of the power amplifier is correspondingly increased. Furthermore, the voltages of the two input ends of the differential amplifier A are reasonably set, so that the power amplifier can work at different bias points under different powers, and the efficiency of the power amplifier is improved.
In a specific example, referring to fig. 2, fig. 3 and fig. 5, the bias module 2 further includes a bias first resistor R21, the first terminal of the amplifying transistor T21 is connected to the control terminal of the bias power transistor T22 through the bias first resistor R21, and is directly or indirectly connected to the second voltage source vref1 through the bias first resistor R21. By biasing the first resistor R21, an association between the amplifier tube T21 and the bias power tube T22 can be formed between the amplifier tube and the bias power tube, so as to realize the aforementioned control process.
The bias module 2 further comprises a bias second resistor R22, a first power tube T23, a second power tube T24 and a bias capacitor C21.
The first end of the bias second resistor R22 is connected to the second voltage source verf1, the second end of the bias second resistor R22 is connected to the control end of the bias power transistor T22, the first end of the first power transistor T23 is connected to the control end of the bias power transistor T22, the second end of the first power transistor T23 is connected to the first end of the second power transistor T24, the second end of the second power transistor T24 is grounded, the first end or the second end of the first power transistor T23 is connected to the control end of the first power transistor, the first end or the second end of the second power transistor T24 is connected to the control end of the second power transistor T24, the first end of the bias capacitor C21 is connected to the control end of the bias power transistor T22, and the second end of the bias capacitor C21 is grounded.
The first power transistor T23 and the second power transistor T24 may be the same type of power transistor, or may be different from each other, for example, if the first power transistor T23 and the second power transistor T24 employ NPN triodes, then: the first terminals of the first power transistor T23 and the second power transistor T24 may be collectors, the second terminals of the first power transistor T23 and the second power transistor T24 may be emitters, and the control terminals thereof may be bases, in which case the bases of the two power transistors are connected to the collectors. In other examples, if other power transistors (e.g., PNP transistors) are used, then: in the first power tube and the second power tube, the base is connected with the second end (for example, the emitter).
Furthermore, through the two power tubes connected in the above way, the static working point offset can be compensated, and the temperature compensation can be realized by utilizing the voltage variation of the power tubes along with the temperature. In addition, the above bias capacitor C21 can help to realize the voltage stabilization of the bias power transistor T22.
In addition, the first terminal of the power amplifier T0 may be connected to the first voltage source vsup and the first terminal of the bias power transistor T22 through the inductor L, and the control terminal of the power amplifier T0 may be connected to the signal input terminal through the input capacitor C0, so as to access the radio frequency signal through the input capacitor C0.
In one embodiment, the reference voltage accessed by the differential amplifier may be provided based on a second voltage source vref1, and referring to fig. 3 and fig. 5, the feedback adjustment module 3 further includes a first voltage-dividing resistor R31 and a second voltage-dividing resistor R32, the first voltage-dividing resistor R31 and the second voltage-dividing resistor R32 are connected in series and then connected between the second voltage source vref1 and the ground, and the first input terminal of the differential amplifier a is connected between the first voltage-dividing resistor R31 and the second voltage-dividing resistor R32, so as to collect the voltage at the corresponding position as the reference voltage.
In one embodiment, referring to fig. 4 and 5, in the rf power amplifying circuit, the power detecting module 1 includes a first detecting capacitor C11, a first detecting resistor R11, and a second detecting resistor R12.
A first end of the detection first resistor R11 is connected to a detection voltage source vref 2; the detection voltage source vref2 may be the same voltage source as the second voltage source vref1, or different, the second end of the detection first resistor R11 is connected to the first end of the detection second resistor R12, the second end of the detection second resistor R12 is directly or indirectly grounded, the first end of the detection first capacitor C11 is directly or indirectly connected to the signal input terminal, the second end of the detection first capacitor is connected between the detection first resistor and the detection second resistor, further, a radio frequency signal may be accessed through the detection first capacitor C11, and the function of the detection first capacitor C11 may be understood with reference to the input capacitor C0.
The input end of the feedback adjusting module 3 is directly or indirectly connected between the first detecting resistor R11 and the second detecting resistor R12, and acquires a corresponding signal as a power detecting signal.
In a further aspect, the power detection module further includes a first unidirectional conducting device (e.g., a first diode D11) and a second unidirectional conducting device (e.g., a second diode D12); in other examples, the unidirectional conducting device may also be other devices that can realize unidirectional conduction, rather than a diode.
The first unidirectional conducting device is connected between the detection second resistor R12 and the ground, a cathode of the first unidirectional conducting device is grounded, a cathode of the second unidirectional conducting device is connected to an input terminal (for example, the second input terminal of the differential amplifier a) of the feedback regulation module 3, and an anode of the second unidirectional conducting device is connected between the detection first resistor R11 and the detection second resistor R12.
In addition, the power detection module 1 may further include a third detecting resistor R13 and a second detecting capacitor C12 for blocking, filtering, and the like.
A first end of the detection third resistor R13 and a first end of the detection second capacitor C12 are both connected to an input end of the feedback adjusting module 3 (e.g., a second input end of a differential amplifier a); the second end of the detection third resistor R13 and the second end of the detection second capacitor C12 are both grounded.
In addition, the numbers of the resistors, the capacitors, the diodes and the power tubes mentioned in the above embodiments may be as shown in the figures, or may be arbitrarily changed, and any change may be made without departing from the description of the corresponding embodiments.
Embodiments of the present invention also provide an electronic device, including a radio frequency power amplifying circuit according to the above alternatives.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A radio frequency power amplification circuit, comprising: the device comprises a power amplifier, a power detection module, a feedback regulation module and a bias module;
the first end of the power amplifier is connected with a first voltage source, the second end of the power amplifier is grounded, and the bias module is connected between the control end and the first end of the power amplifier so as to control the bias voltage of the power amplifier; the control end of the power amplifier is directly or indirectly connected with the signal input end so as to access a radio frequency signal through the signal input end;
the power detection module is configured to acquire a power detection signal, wherein the power detection signal is characterized by the output power of the power amplifier;
the output end of the power detection module is connected with the input end of the feedback regulation module so as to feed the power detection signal back to the feedback regulation module;
the output end of the feedback adjusting module is connected with the bias module so as to respond to the power detection signal and adjust the bias voltage.
2. The radio frequency power amplification circuit of claim 1, wherein the power detection module is configured to:
raising a voltage of the power detection signal when the output power is raised;
reducing a voltage of the power detection signal when the output power is reduced;
the feedback adjustment module is configured to:
when the voltage of the power detection signal is higher than the lowest voltage threshold value, the bias voltage is controlled to be larger as the voltage of the power detection signal is larger and smaller as the voltage of the power detection signal is smaller.
3. The radio frequency power amplification circuit of claim 2, wherein the feedback regulation module comprises a differential amplifier, and the bias module comprises an amplifier tube and a bias power tube; the first end and the second end of the bias power tube are connected between the control end and the first end of the power amplifier, the first end of the bias power tube is connected with the first voltage source, the second end of the bias power tube is directly or indirectly connected with the control end of the power amplifier, and the control end of the bias power tube is directly or indirectly connected with the first end of the power amplifier tube and the second voltage source;
a first input end of the differential amplifier is connected with a reference voltage, and a second input end of the differential amplifier is connected with an output end of the power detection module to obtain the power detection signal;
the differential amplifier is used for:
when the voltage of the power detection signal is lower than the lowest voltage threshold value, the amplifying tube is driven to be completely opened;
when the voltage of the power detection signal is higher than the lowest voltage threshold, the opening amplitude of the amplifying tube is reduced in response to the voltage rise of the power detection signal; and: responding to the voltage reduction of the power detection signal, and increasing the opening amplitude of the amplifying tube;
wherein the bias voltage is negatively related to the turn-on amplitude of the amplifier tube.
4. The RF power amplifier circuit according to claim 3, wherein the bias module further comprises a bias first resistor, the first terminal of the amplifier transistor is connected to the control terminal of the bias power transistor via the bias first resistor, and is directly or indirectly connected to the second voltage source via the bias first resistor.
5. The radio frequency power amplification circuit of claim 4, wherein the bias module further comprises a bias second resistor, a first power transistor, a second power transistor, a bias capacitor;
the first end of the bias second resistor is connected with the second voltage source, the second end of the bias second resistor is connected with the control end of the bias power tube, the first end of the first power tube is connected with the control end of the bias power tube, the second end of the first power tube is connected with the first end of the second power tube, the second end of the second power tube is grounded, the first end or the second end of the first power tube is connected with the control end of the first power tube, the first end or the second end of the second power tube is connected with the control end of the second power tube, the first end of the bias capacitor is connected with the control end of the bias power tube, and the second end of the bias capacitor is grounded.
6. The rf power amplifier circuit according to claim 3, wherein the feedback adjusting module further includes a first voltage dividing resistor and a second voltage dividing resistor, the first voltage dividing resistor and the second voltage dividing resistor are connected in series and then connected between the second voltage source and ground, and the first input terminal of the differential amplifier is connected between the first voltage dividing resistor and the second voltage dividing resistor to collect the voltage at the corresponding position as the reference voltage.
7. The RF power amplifying circuit according to any one of claims 1 to 6, wherein the power detecting module comprises a first detecting capacitor, a first detecting resistor and a second detecting resistor;
the first end access detection voltage source that detects first resistance, the second end connection that detects first resistance detect the first end of second resistance, the second end that detects the second resistance is direct or indirect ground connection, the first end that detects first electric capacity is direct or indirect connection signal input part, the second end that detects first electric capacity is connected to detect first resistance with detect between the second resistance, the input of feedback regulation module is direct or indirect connection to detect first resistance with detect between the second resistance.
8. The rf power amplifier circuit according to claim 7, wherein the power detection module further comprises a first unidirectional conducting device and a second unidirectional conducting device; the first unidirectional conduction device is connected between the detection second resistor and the ground, the negative electrode of the first unidirectional conduction device is grounded, the negative electrode of the second unidirectional conduction device is connected with the input end of the feedback regulation module, and the positive electrode of the second unidirectional conduction device is connected between the detection first resistor and the detection second resistor.
9. The rf power amplifier circuit as claimed in claim 8, wherein the power detection module further comprises a third resistor and a second capacitor;
the first end of the third detection resistor and the first end of the second detection capacitor are both connected to the input end of the feedback regulation module; and the second end of the third detection resistor and the second end of the second detection capacitor are both grounded.
10. An electronic device comprising the radio frequency power amplification circuit of any one of claims 1 to 9.
CN202110406085.3A 2021-04-15 2021-04-15 Radio frequency power amplifying circuit and electronic equipment Pending CN113037233A (en)

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