CN113030683A - Method, medium and computer equipment for measuring temperature of power switch device - Google Patents
Method, medium and computer equipment for measuring temperature of power switch device Download PDFInfo
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Abstract
The invention discloses a method, a medium and computer equipment for measuring the temperature of a power switch device, wherein the method comprises the following steps: acquiring a calibration value of the on-resistance of the power switch device at a standard temperature; acquiring the on-resistance of the power switch device when the power switch device is switched on at the actual ambient temperature; according to the on-resistance and the calibration value of the on-resistance, determining a corresponding on-resistance standardized value at the actual environment temperature; the standardized value of the on-resistance is the ratio of the on-resistance to the calibrated value of the on-resistance; determining the real-time temperature of the power switch device according to the standardized value of the on-resistance and through the standard mapping relation of the power switch device; the invention can measure the temperature of the power switch device.
Description
Technical Field
The invention belongs to the technical field of electronics, and particularly relates to a method, a medium and computer equipment for measuring the temperature of a power switch device.
Background
In order to ensure the safe operation of the electric vehicle, the temperature of a power switch device MOSFET in a motor controller needs to be measured, monitored and protected, the accurate temperature measurement is very important, the over-temperature protection can be timely and accurately carried out, and the performance of the power switch device is fully exerted as far as possible on the premise of ensuring the safety of the motor controller. Under the conventional technology, in the technical scheme of temperature measurement of a power switch device in a motor controller:
one is to measure the temperature by installing a thermistor near the power switch device and performing voltage division detection and conversion of the electrical signal (for example, patent application No. 202020427169.6 "a motor controller temperature sampling circuit and temperature detection circuit"). The method measures that the temperature near the power switch device is different from the core temperature of the power switch device, and particularly, a large error is easily introduced in the process of rapid temperature change of the power switch device due to transient operation, so that when the scheme is used for temperature detection and protection design of a motor controller, the design margin of the power switch device is often large or the design margin of a protection temperature value is large, and the performance of a product cannot be fully exerted.
The other type is that the temperature of the core of the power switch device is estimated by inverse estimation through measuring the change of the electric signal by utilizing the characteristic that the electric quantity of the semiconductor device is a function related to the temperature. For example, the method entitled "method for estimating the temperature of a transistor" (application No. 201610108069.5) employs a method of estimating the associated average junction temperature or die temperature of a transistor over a switching cycle by detecting the change in turn-off voltage between the collector and emitter of the transistor with respect to time, the peak voltage between the collector and emitter of the transistor, determining intermediate parameters of turn-off current, turn-on current, and on-state voltage drop, then determining the power or energy loss of the transistor over a switching cycle, in conjunction with the observed temperature of the cooling inverter system. The method has the following problems: for a power switch device which is turned off quickly, the change rate of the turn-off voltage is measured, and the requirement on the real-time responsiveness of a system is high; the measurement and estimation steps are too complicated, errors are easily introduced, and are not easily implemented in a motor controller system.
Disclosure of Invention
In order to overcome the technical defects, the invention provides a method, a medium and computer equipment for measuring the temperature of a power switching device, and aims to provide a more effective method for measuring the temperature of the power switching device.
In order to solve the problems, the invention is realized according to the following technical scheme:
in a first aspect, the present invention provides a method for measuring the temperature of a power switching device, the method comprising:
acquiring a calibration value of the on-resistance of the power switch device at a standard temperature;
acquiring the on-resistance of the power switch device in actual use;
according to the on-resistance and the resistance calibration value, determining a standardized value of the on-resistance in actual use; the normalized value of the on-resistance is the ratio of the on-resistance to the normalized value of the on-resistance;
and determining the die temperature of the power switch device according to the normalized value of the on-resistance.
Further, the step of obtaining a calibration value of the on-resistance of the power switching device at a standard temperature includes:
sending a test signal for driving the power switch device to be conducted, and acquiring a test resistance of the power switch device at a test temperature when the power switch device is conducted;
and determining the calibration value of the on-resistance of the power switching device at the standard environment temperature according to the standard mapping relation and the test resistance of the power switching device, wherein the standard mapping relation is the mapping relation between the calibration value of the on-resistance and the tube core temperature.
Further, the step of sending a test signal for driving the power switch device to be turned on and obtaining the test resistance of the power switch device at the test temperature when the power switch device is turned on includes:
sending a test signal for driving the power switch device to be conducted, and acquiring a test conduction voltage drop value and a test conduction current value of the conducted power switch device when the power switch device is conducted;
and calculating the test resistance according to the test breakover voltage drop value and the test breakover current value.
Further, the conduction voltage drop value is a difference value between a measured value and a zero drift voltage, wherein the measured value and the zero drift voltage are measured by a voltage amplification acquisition circuit.
Further, the step of obtaining the on-resistance of the power switch device conducting at the actual ambient temperature includes:
sending a conducting signal for driving the power switch device to be conducted, and acquiring an actual conducting voltage drop value and an actual conducting current value of the power switch device after being conducted;
and calculating the on-resistance of the power switch device at the actual environment temperature according to the actual on-voltage drop value and the actual on-current value.
Further, the step of determining the die temperature of the power switching device according to the normalized value of the on-resistance includes:
and determining the tube core temperature of the power switch device according to the normalized value of the on-resistance and the standard mapping relation.
Further, the standard temperature of the power switch device is 25 ℃.
Further, the power switch device is one of a P-channel MOSFET and an N-channel MOSFET.
In a second aspect, the present invention provides a computer-readable storage medium storing a computer program, which when executed by a processor causes the processor to implement the method of measuring the temperature of a power switching device according to the first aspect.
In a third aspect, the present invention provides a computer device comprising a processor and a memory;
the memory for storing a computer program;
the processor is configured to execute the computer program and to implement the method of measuring the temperature of a power switching device according to the first aspect when executing the computer program.
Compared with the prior art, the invention has the beneficial effects that:
the invention discloses a method, medium and computer equipment for measuring the temperature of a power switch device; the method for measuring the temperature of the power switching device comprises the steps of firstly obtaining a resistance calibration value of the power switching device, wherein the calibration value is the resistance value of the power switching device at a standard environment temperature, calculating to obtain a standard value of the on-resistance of the power switching device at a working environment by combining the on-resistance of the power switching device, and then obtaining a corresponding relation between the standard value of the on-resistance and the tube core temperature by inquiring a corresponding power device manual to determine the temperature of the power switching device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a method of measuring the temperature of a power switching device in the present embodiment 1;
fig. 2 is a flowchart for obtaining the calibration value of the on-resistance of the power switching device at the standard temperature in the embodiment 1;
FIG. 3 is a first mapping between the normalized value of the on-resistance and the die temperature in the present embodiment 1;
fig. 4 is a schematic diagram of an apparatus for measuring the temperature of the power switching device in the present embodiment 1;
fig. 5 is a second mapping relationship between the normalized value of the on-resistance and the die temperature in this embodiment 1.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The flow diagrams depicted in the figures are merely illustrative and do not necessarily include all of the elements and operations/steps, nor do they necessarily have to be performed in the order depicted. For example, some operations/steps may be decomposed, combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.
In the motor controller, the power switching device, the driving apparatus, and the current sensor for current measurement and feedback control are included, and for the power switching device with a higher temperature on the motor controller, this embodiment proposes a method for measuring the temperature of the power switching device, so as to measure the temperature of the power switching device in the motor controller.
Example 1
The present embodiment provides a method for measuring the temperature of a power switching device, and referring to fig. 1, the method includes the following steps:
s100, acquiring a calibration value of the on-resistance of the power switching device at a standard temperature;
specifically, the standard ambient temperature is usually 25 degrees celsius, and is generally selected according to a standard temperature corresponding to a standard mapping relationship of power switching devices, where the power switching devices in the motor controller include, but are not limited to, a P-channel MOSFET and an N-channel MOSFET. It should be noted that, the resistance of the power switch device when it is turned on in this embodiment refers to the on-resistance R between the source and the drain of the power switch deviceDS(on)。
In some embodiments, step S100 comprises:
s101, recording the environmental temperature during calibration; the temperature can be measured by an external temperature detection mechanism and then the temperature test result is sent to the motor controller;
s102, driving a power switch device to be conducted by a motor controller, and recording a conducting voltage drop value and a conducting current value;
in a specific embodiment, after a motor controller drives a power switch device to be conducted, obtaining a conducting voltage drop value and a conducting current value of the conducted power switch device;
specifically, the test conduction voltage drop value is a difference value between a measured value and a zero drift voltage, wherein the measured value and the zero drift voltage are measured by a voltage amplification acquisition circuit.
S103, calculating a test resistance, and calculating according to the test breakover voltage drop value and the test breakover current value through an ohm law.
S104, calculating a calibration value of the on-resistance of the power switching device at a standard temperature; and calculating the calibration value of the on-resistance at the standard temperature according to a preset standard mapping relation, the test resistance and the environment temperature during calibration, wherein the standard mapping relation is the mapping relation between the calibration value of the on-resistance and the tube core temperature. The normalized value of on-resistance is mapped to die temperature with reference to fig. 3.
S105, storing the calibration value of the on-resistance in a storage medium of a motor controller; used for the temperature calculation in the subsequent actual use process.
As a more specific embodiment, referring to FIG. 4, the temperature of the test environment, such as T, is first recordedEnvironment(s)Reading the zero drift voltage of the amplifying and collecting circuit under the condition of not outputting current, such as measuring the zero drift voltage VDS0Then the motor controller applies a fixed current to the power switch device for a short time, and records the measured on-state voltage drop value VDSAnd the on current value IDE.g. VDS＝0.16V，IDWhen the value is 10A, a calibration value R corresponding to the on-resistance can be calculatedDS(on)＝(VDS-VDS0)/ID15m omega, because the motor controller applies fixed current in a short time, the temperature of the tube core at the time is approximate to the ambient temperature, and the normalized value R of the on-resistance at the corresponding temperature is found according to the ambient temperature and by combining the standard mapping relation (the mapping relation between the normalized value of the on-resistance and the temperature of the tube core) of the computer equipmentDS(norm)Such as RDS(norm)1.06, then the calibration value R of the corresponding on-resistance of the power switch device at 25 ℃ can be calculatedDS(on)To this end, a power switch is obtained, 15m Ω/1.06 to 14.2m ΩThe device has a nominal on-resistance of 14.2m omega at 25 degrees celsius.
In this embodiment, the current sensor provided in the motor controller is used to detect the current of the power switching device, and no additional current detection device or temperature sensor is required, thereby providing higher implementation convenience.
S200, acquiring the conducting resistance of the power switch device conducted at the actual environment temperature;
in some embodiments, step S200 includes:
sending a conducting signal for driving the power switch device to be conducted, and acquiring an actual conducting voltage drop value and an actual conducting current value of the power switch device after the power switch device is conducted and stable;
and calculating the conducting resistance of the power switch device conducted at the actual environment temperature according to the actual voltage value and the actual current value.
S300, determining a corresponding normalized value of the on-resistance at the actual environment temperature according to the on-resistance and the calibrated value of the on-resistance; the standardized value of the on-resistance is the ratio of the on-resistance to the resistance calibration value.
And S400, determining the temperature of the power switch device according to the normalized value of the on-resistance.
Specifically, the temperature of the power switching device is determined according to the normalized value of the on-resistance and the standard mapping relation.
As a more specific embodiment, the motor controller measures the on-current I after the power switch device is turned on and stable during actual useDAnd a conduction voltage drop VDSSuch as ID＝10A，VDSCalculating the on-resistance R of the power switch device by ohm's law under 0.20VDS(on)＝VDS/ID20m Ω, followed by a calibration of the on-resistance, such as calibration R of the on-resistanceDS (on) calibration valueAfter that, a normalized value R of the on-resistance was calculated at 14.2m ΩDS(on)(norm)＝RDS(on)/RDS (on) calibration value1.41, see fig. 5, to yieldCorresponding die temperature TTube core＝80℃。
In some embodiments, step S100 occurs during a production test calibration phase of the motor controller, and steps S200-S400 occur during actual use of the motor controller.
Example 2
The embodiment of the invention provides computer equipment, which comprises a processor and a memory, wherein the memory is used for storing a computer program; the processor is configured to execute the computer program and implement the method for measuring the temperature of the power switching device provided in embodiment 1 of the present invention when the computer program is executed.
It should be understood that the Processor may be a Central Processing Unit (CPU), and the Processor may be other general purpose processors, Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components, etc. Wherein a general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
Example 3
An embodiment of the present invention provides a computer-readable storage medium in which a normalized value of on-resistance calculated in embodiment 1 of the present invention is stored.
Computer-readable storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory, or other memory technology.
It will be understood by those of ordinary skill in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable storage media, which may include computer readable storage media (or non-transitory media) and communication media (or transitory media).
The term computer-readable storage medium includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer-readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer-readable storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
For example, the computer readable storage medium may be an internal storage unit of the network management device in the foregoing embodiment, for example, a hard disk or a memory of the network management device. The computer readable storage medium may also be an external storage device of the network management device, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like, which are equipped on the network management device.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method of measuring the temperature of a power switching device, the method comprising:
acquiring a calibration value of the on-resistance of the power switch device at a standard temperature;
acquiring the on-resistance of the power switch device in actual use;
according to the on-resistance and the resistance calibration value, determining a standardized value of the on-resistance in actual use; the normalized value of the on-resistance is the ratio of the on-resistance to the normalized value of the on-resistance;
and determining the die temperature of the power switch device according to the normalized value of the on-resistance.
2. The method of claim 1, wherein the step of obtaining a calibration value of the on-resistance of the power switch at a standard temperature comprises:
sending a test signal for driving the power switch device to be conducted, and acquiring a test resistance of the power switch device at a test temperature when the power switch device is conducted;
and determining the calibration value of the on-resistance of the power switching device at the standard environment temperature according to the standard mapping relation and the test resistance of the power switching device, wherein the standard mapping relation is the mapping relation between the calibration value of the on-resistance and the tube core temperature.
3. The method of claim 2, wherein the step of issuing a test signal to drive the power switch device to conduct and obtaining the test resistance of the power switch device at the test temperature while the power switch device is conducting comprises:
sending a test signal for driving the power switch device to be conducted, and acquiring a test conduction voltage drop value and a test conduction current value of the conducted power switch device when the power switch device is conducted;
and calculating the test resistance according to the test breakover voltage drop value and the test breakover current value.
4. The method of claim 3, wherein the turn-on voltage drop is a difference between a measured value and a zero-shift voltage, and wherein the measured value and the zero-shift voltage are measured by a voltage amplification and collection circuit.
5. The method of claim 4, wherein the step of obtaining the on-resistance of the power switch conducting at the actual ambient temperature comprises:
sending a conducting signal for driving the power switch device to be conducted, and acquiring an actual conducting voltage drop value and an actual conducting current value of the power switch device after being conducted;
and calculating the on-resistance of the power switch device at the actual environment temperature according to the actual on-voltage drop value and the actual on-current value.
6. The method of claim 2, wherein determining the die temperature of the power switching device based on the normalized value of the on-resistance comprises:
and determining the tube core temperature of the power switch device according to the normalized value of the on-resistance and the standard mapping relation.
7. The method of any of claims 1-6, wherein the standard temperature of the power switching device is 25 degrees Celsius.
8. The method of any of claims 1-6, wherein the power switch device is one of a P-channel MOSFET and an N-channel MOSFET.
9. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a computer program which, when executed by a processor, causes the processor to carry out the method of measuring the temperature of a power switching device according to any one of claims 1 to 8.
10. A computer device comprising a processor and a memory;
the memory for storing a computer program;
the processor for executing the computer program and when executing the computer program implementing the method of measuring the temperature of a power switching device according to any of claims 1 to 8.
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| CN113933671A (en) * | 2021-09-01 | 2022-01-14 | 郑州嘉晨电器有限公司 | MOS device temperature detection device |
| CN115291590A (en) * | 2022-08-02 | 2022-11-04 | 臻驱科技（上海）有限公司 | On-line evaluation method, device, motor controller and medium for output current limitation |
| CN115683376A (en) * | 2021-07-30 | 2023-02-03 | 比亚迪股份有限公司 | Electronic component temperature detection method, electronic component execution system, and vehicle |
| IT202200019947A1 (en) * | 2022-09-28 | 2024-03-28 | St Microelectronics Srl | PROCEDURE FOR DETECTING A CURRENT FLOWING IN A TRANSISTOR DRIVING A LOAD, AND CORRESPONDING CIRCUIT ARRANGEMENT FOR THE DETECTION |
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