CN113004800A - Chemical mechanical polishing solution - Google Patents
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- CN113004800A CN113004800A CN201911327371.XA CN201911327371A CN113004800A CN 113004800 A CN113004800 A CN 113004800A CN 201911327371 A CN201911327371 A CN 201911327371A CN 113004800 A CN113004800 A CN 113004800A
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- 238000005498 polishing Methods 0.000 title claims abstract description 86
- 239000000126 substance Substances 0.000 title claims abstract description 41
- 230000007547 defect Effects 0.000 claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000002245 particle Substances 0.000 claims abstract description 19
- 239000007800 oxidant agent Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 239000003381 stabilizer Substances 0.000 claims abstract description 9
- 239000003112 inhibitor Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 18
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical group OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 16
- 229920002125 Sokalan® Polymers 0.000 claims description 15
- 229960001631 carbomer Drugs 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- 150000001732 carboxylic acid derivatives Chemical group 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 claims description 5
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- 230000000536 complexating effect Effects 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- QZRHHEURPZONJU-UHFFFAOYSA-N iron(2+) dinitrate nonahydrate Chemical group O.O.O.O.O.O.O.O.O.[Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O QZRHHEURPZONJU-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 42
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 37
- 229910052721 tungsten Inorganic materials 0.000 abstract description 37
- 239000010937 tungsten Substances 0.000 abstract description 37
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 19
- 230000000052 comparative effect Effects 0.000 description 15
- 230000000875 corresponding effect Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 9
- 229940049638 carbomer homopolymer type c Drugs 0.000 description 8
- 229940043234 carbomer-940 Drugs 0.000 description 8
- 238000000227 grinding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- JVTIXNMXDLQEJE-UHFFFAOYSA-N 2-decanoyloxypropyl decanoate 2-octanoyloxypropyl octanoate Chemical compound C(CCCCCCC)(=O)OCC(C)OC(CCCCCCC)=O.C(=O)(CCCCCCCCC)OCC(C)OC(=O)CCCCCCCCC JVTIXNMXDLQEJE-UHFFFAOYSA-N 0.000 description 4
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229940082484 carbomer-934 Drugs 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 carbomer 940 Chemical compound 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, which comprises: abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidizing agent, water, and a pH modifier. The chemical mechanical polishing solution realizes the simultaneous polishing of tungsten, silicon oxide and silicon nitride, ensures the high polishing speed of tungsten, has the medium silicon oxide speed and the low silicon nitride speed, greatly reduces the surface defects of the polished silicon nitride surface, and realizes the rapid planarization.
Description
Technical Field
The invention relates to a chemical mechanical polishing solution.
Background
Modern semiconductor technology is rapidly advancing toward miniaturization, and semiconductor integrated circuits comprising a silicon substrate and millions of elements thereon form an interconnect structure through a multi-layer interconnect. Layers and structures include a variety of materials such as single crystal silicon, silicon dioxide, tungsten, silicon nitride, and various other conductive, semiconductive, and dielectric materials. Thin layer structures of these materials can be fabricated by a variety of deposition techniques, such as Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and Plasma Enhanced Chemical Vapor Deposition (PECVD), after which excess material needs to be removed. As layers of material are deposited and removed, the uppermost surface of the wafer becomes uneven. These unevenness may cause various defects of products, and thus planarization techniques of the conductive layer and the insulating dielectric layer become important. In the 80's of the twentieth century, Chemical Mechanical Polishing (CMP) technology pioneered by IBM corporation was considered the most effective method of global planarization at present.
Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both actions. Typically, the wafer is held on a polishing head and its front surface is brought into contact with a polishing pad in a CMP apparatus. Under certain pressure, the grinding head moves linearly on the polishing pad or rotates along the same motion direction as the grinding table. At the same time, a polishing composition ("slurry") is injected between the wafer and the polishing pad at a flow rate that is centrifugally spread across the polishing pad. Thus, the wafer surface is polished and globally planarized under the dual action of chemical and mechanical action. CMP can be used to remove unwanted surface topography and surface defects such as rough surfaces, adsorbed impurities, lattice damage, scratches, and the like.
In semiconductor integrated circuit design fabrication, tungsten is used to form interconnects and contact plugs. Chemical mechanical polishing is the preferred method of polishing tungsten. Because tungsten has certain hardness, the polishing process of tungsten is different from that of other metals. Meanwhile, in some chemical mechanical polishing practical applications, a situation that tungsten, silicon oxide and silicon nitride need to be polished simultaneously occurs. This presents challenges to the design of polishing compositions due to the need to control the rate, dishing, and surface defects of several different media. U.S. patent US 9567491 discloses a polishing composition that can simultaneously polish tungsten, silicon oxide and silicon nitride, describes a method for reducing tungsten dishing on patterned wafers, but does not suggest measures to address silicon nitride surface defects, and has a tungsten removal rate that is slow relative to the silicon oxide removal rate. U.S. patent No. 9771496 discloses a polishing composition containing a cyclopolysaccharide compound that simultaneously polishes tungsten, silicon oxide and silicon nitride. This combination can greatly reduce silicon oxide defects but does not help to reduce silicon nitride surface defects. Chinese patent CN 104284960 discloses a polishing composition for highly selective polishing of silicon oxide/silicon nitride, which can control defects of silicon nitride, but the composition cannot be used for tungsten polishing. Chinese patent CN 105229110 discloses a polishing composition that can control defects on the surface of silicon nitride, but this composition cannot be used for tungsten polishing either. However, if the surface defects of the polished silicon nitride are not well controlled, the dielectric layer deposited thereon is not flat, which may affect the wafer yield.
It is therefore of great interest in the art to find a polishing composition that simultaneously polishes tungsten, silicon oxide, and silicon nitride with reduced surface defects on the silicon nitride.
Disclosure of Invention
In order to solve the technical problems that the existing tungsten chemical mechanical polishing solution can not polish tungsten, silicon oxide and silicon nitride simultaneously, and can control the speed and surface defects of the tungsten, the silicon oxide and the silicon nitride respectively, and has the advantages of keeping high tungsten polishing speed, having medium silicon oxide speed and low silicon nitride speed and reducing the surface defects of the silicon nitride, the invention provides the chemical mechanical polishing solution which comprises the following components in percentage by weight: abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidizing agent, water, and a pH modifier.
Further, the cross-linked macromolecular surface defect inhibitor is carbomer.
Further, the carbomer is one or more of type 934 (i.e., carbomer 934), 940 (i.e., carbomer 940) and 941 (i.e., carbomer 941), with the difference in viscosity between carbomer 934, carbomer 940 and carbomer 941.
Further, the concentration range of the carbomer with the type 940 is 0.005% -0.1%.
Further, the concentration range of the carbomer with the type 940 is 0.005% -0.05%.
Further, the abrasive particles are SiO2。
Further, the concentration range of the grinding particles is 0.5% -3%.
Further, the concentration range of the grinding particles is 1-3%.
Further, the catalyst is selected from ferric nitrate nonahydrate.
Further, the concentration range of the ferric nitrate nonahydrate is 0.01-0.1%.
Further, the concentration range of the ferric nitrate nonahydrate is 0.01-0.07%.
Further, the stabilizer is a carboxylic acid that can complex with iron.
Further, the carboxylic acid capable of complexing with iron is selected from one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid and maleic acid.
Further, the carboxylic acid that can be complexed with iron is malonic acid.
Further, the concentration range of the malonic acid is 0.05% -0.3%.
Further, the concentration range of the malonic acid is 0.1% -0.27%.
Further, the oxidant is H2O2。
Further, the concentration range of the oxidant is 1-2%.
Further, the pH regulator is HNO3。
Further, the pH value is 2-4. When the pH is less than 2, the chemical mechanical polishing solution is dangerous, and the pH is more than 4, which can cause the defects of unstable grinding particles, Fe precipitation and the like.
It should be understood that% of the concentrations described herein all refer to mass concentrations.
Compared with the prior art, the invention has the advantages that:
the chemical mechanical polishing solution realizes polishing tungsten, silicon oxide and silicon nitride simultaneously, has moderate silicon oxide speed and low silicon nitride speed concurrently when guaranteeing the polishing speed of high tungsten, simultaneously, the chemical mechanical polishing solution of this application through adding carbomer, greatly reduced the surface defect on polishing back silicon nitride surface, restrain silicon nitride surface defect, realize quick flattening.
Detailed Description
The advantages of the invention are explained in detail below with reference to specific embodiments.
The chemical mechanical polishing composition for polishing tungsten of the present invention is described in detail below by way of specific examples to provide a better understanding of the invention, but the following examples do not limit the scope of the invention.
It should be understood that% in the concentrations described herein all refer to mass percent.
Examples
The preparation method comprises the following steps: all the components are dissolved and mixed uniformly according to the formula of the table 1, the mass percent is complemented to 100 percent by water, and the pH value is adjusted to a desired value by a pH regulator.
TABLE 1 kinds of respective components of examples and comparative examples and their corresponding concentrations
Examples of effects
The chemical mechanical polishing liquids of the examples and comparative examples in table 1 were used to polish tungsten, silicon oxide, and silicon nitride wafers and measure surface defects of the silicon nitride wafers according to the following experimental conditions, and the results in table 2 were obtained.
The polishing method comprises the following steps: the polishing machine is a 12-inch polishing machine (Reflexion LK) of applied materials company, the pressure is 3.0psi, the rotating speed of the polishing disk and the polishing head is 93/87rpm, the polishing pad IC1010, the flow rate of the polishing solution is 150ml/min, and the polishing time is 1 minute.
Surface defect measurement method: the surface of the silicon nitride was measured using a non-patterned wafer defect inspection system (Surfscan SP2) from KLA-Tencor, which counts defects with a diameter greater than 120 nm.
TABLE 2 polishing rates of examples and comparative examples for tungsten, silicon oxide, and silicon nitride, and effects of suppressing defects on silicon nitride surfaces
Examples 1 to 7 show that the chemical mechanical polishing solution of the present invention can simultaneously perform polishing of tungsten, silicon oxide and silicon nitride, and that the polishing rate: tungsten, silicon oxide and silicon nitride, and simultaneously can keep a high polishing speed of tungsten, simultaneously has a medium silicon oxide speed and a low silicon nitride speed, and simultaneously has the capability of inhibiting defects on the polished silicon nitride surface. Wherein the polishing rate of tungsten is positively correlated with the concentration of the oxidizing agent, or the concentration of the abrasive particles, or the concentration of the catalyst, or the concentration of the oxidizing agent. Specifically, the concentration of the oxidizer in examples 1-3 in table 2 was 1.00%, corresponding to tungsten polishing rates of 2356, 2318, 2325, respectively; when the concentration of the oxidizing agent was increased to 2.0% (as in examples 4-7), the corresponding tungsten polishing rates were 3107, 3611, 3552, 3409, respectively. Specifically, in table 2, the abrasive particles of examples 1-3 were all 1.0% in concentration, corresponding to tungsten polishing rates of 2356, 2318, 2325, respectively; when the concentration of abrasive particles was increased to 2.0% (as in example 4), the corresponding tungsten polishing rate was 3107; when the concentration of abrasive particles was increased to 3.0% (as in examples 5-7), the corresponding tungsten polishing rates were 3611, 3552, 3409, respectively. Specifically, the catalyst concentration in examples 1-3 in table 2 was 0.01%, corresponding to tungsten polishing rates of 2356, 2318, 2325, respectively; when the concentration of catalyst was increased to 0.05% (as in example 4), the corresponding tungsten polishing rate was 3107; when the catalyst concentration was increased to 0.07% (as in examples 5-7), the corresponding tungsten polishing rates were 3611, 3552, 3409, respectively. Therefore, the polishing rate of tungsten can be adjusted by adjusting the amounts of the oxidizing agent, the abrasive particles, and the catalyst.
It was found by comparing comparative examples 1-2 with examples 1-7 that the addition of carbomers (e.g., carbomer 934, carbomer 940, carbomer 941) provided a significant improvement in surface defects of the silicon nitride after polishing, based on the same abrasive particles, catalyst, stabilizer, oxidizing agent and pH. Specifically, it can be found from examples 1 to 3 and comparative example 4 that the addition of carbomer (carbomer 934, carbomer 940 and carbomer 941) on the basis of the same abrasive particles, catalyst, stabilizer, oxidant and pH significantly improves the surface defects of polished silicon nitride, and reduces the surface defects of silicon nitride from about 900 to about 300. Similarly, the same conclusions can be drawn by example 4 and comparative example 2. The same conclusions can be drawn from examples 5 to 7 and comparative examples 1 and 3. Furthermore, it can be seen from examples 5 to 7 that, with the same abrasive particles, catalyst, stabilizer, oxidizing agent and pH, the number of defects decreases with increasing amounts of carbomer, up to only one ninth of the number in the absence of carbomer. Meanwhile, the amount of carbomer does not have a great influence on the polishing rate. Specifically, when the concentration of carbomer 940 was 0.015% (example 5), the corresponding silicon nitride surface defects were 162; when the concentration of carbomer 940 was 0.050% (example 5), the corresponding silicon nitride surface defects were 147; when the concentration of carbomer 940 was 0.100% (example 5), the corresponding silicon nitride surface defects were 101 (about one-ninth of the silicon nitride surface defects 976 in comparative example 1).
By comparing comparative example 3 and example 5, it was found that the chemical mechanical polishing solution obtained by adding carbomer monomer acrylic acid has no ability to correct defects after silicon nitride polishing. Specifically, on the basis that the abrasive particles, the catalyst, the stabilizer, the oxidizing agent and the pH are completely the same, and the concentration of carbomer 940 in example 5 is consistent with the concentration of acrylic acid in comparative example 3, the chemical mechanical polishing solution of example 5 has the ability to inhibit silicon nitride surface defects, which is reduced from 976 of comparative example 1 to 162 relative to comparative example 1; the composition of comparative example 3 did not have the ability to suppress silicon nitride surface defects because the surface defects of comparative example 3 were similar to those of comparative example 1.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (20)
1. A chemical mechanical polishing solution comprising: abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidizing agent, water, and a pH modifier.
2. The chemical mechanical polishing solution of claim 1, wherein the cross-linked macromolecular surface defect inhibitor is carbomer.
3. The chemical mechanical polishing solution of claim 2, wherein the carbomer is one or more of type 934, 940 and 941.
4. The chemical mechanical polishing solution according to claim 3, wherein the concentration of carbomer of type 940 is in the range of 0.005-0.1%.
5. The chemical mechanical polishing solution according to claim 4, wherein the concentration of carbomer of type 940 is in the range of 0.005-0.05%.
6. The chemical mechanical polishing solution according to claim 1, wherein the abrasive particles are SiO2。
7. The chemical mechanical polishing solution according to claim 1, wherein the concentration of the abrasive particles is in the range of 0.5% to 3%.
8. The chemical mechanical polishing solution according to claim 7, wherein the concentration of the abrasive particles is in the range of 1% to 3%.
9. The chemical mechanical polishing solution of claim 1, wherein the catalyst is selected from iron nitrate nonahydrate.
10. The chemical mechanical polishing solution of claim 9, wherein the concentration of the ferric nitrate nonahydrate ranges from 0.01% to 0.1%.
11. The chemical mechanical polishing solution of claim 10, wherein the concentration of the ferric nitrate nonahydrate ranges from 0.01% to 0.07%.
12. The chemical mechanical polishing solution according to claim 1, wherein the stabilizer is a carboxylic acid capable of complexing with iron.
13. The chemical mechanical polishing solution according to claim 12, wherein the carboxylic acid capable of complexing with iron is selected from one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid and maleic acid.
14. The chemical mechanical polishing solution according to claim 13, wherein the carboxylic acid capable of complexing with iron is malonic acid.
15. The chemical mechanical polishing solution of claim 14, wherein the concentration of the malonic acid ranges from 0.05% to 0.3%.
16. The chemical mechanical polishing solution of claim 15, wherein the concentration of the malonic acid ranges from 0.1% to 0.27%.
17. The chemical mechanical polishing solution of claim 1, wherein the oxidizing agent is H2O2。
18. The chemical mechanical polishing solution according to claim 17, wherein the concentration of the oxidizing agent is in the range of 1 to 2%.
19. The chemical mechanical polishing solution of claim 1, saidThe pH regulator is HNO3。
20. The chemical mechanical polishing solution according to claim 1, having a pH of 2 to 4.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911327371.XA CN113004800B (en) | 2019-12-20 | 2019-12-20 | A chemical mechanical polishing liquid |
| PCT/CN2020/133604 WO2021121045A1 (en) | 2019-12-20 | 2020-12-03 | Chemical-mechanical polishing solution |
| TW109143683A TWI861305B (en) | 2019-12-20 | 2020-12-10 | Chemical mechanical polishing slurry |
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| CN201911327371.XA CN113004800B (en) | 2019-12-20 | 2019-12-20 | A chemical mechanical polishing liquid |
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| CN113004800B CN113004800B (en) | 2024-04-12 |
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| CN116200129A (en) * | 2022-12-30 | 2023-06-02 | 宁波平恒电子材料有限公司 | Tungsten polishing solution and preparation method thereof |
| CN118271973B (en) * | 2024-05-29 | 2024-08-20 | 广东粤港澳大湾区黄埔材料研究院 | Suspension polishing solution and preparation method thereof, and silicon carbide polishing method |
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| US6039633A (en) * | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
| US20050148186A1 (en) * | 2004-01-05 | 2005-07-07 | Hynix Semiconductor Inc. | Slurry composition with high planarity and CMP process of dielectric film using the same |
| CN1787966A (en) * | 2003-07-28 | 2006-06-14 | Ppg工业俄亥俄公司 | Silica and silica-based slurry |
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| WO2021121045A1 (en) | 2021-06-24 |
| TW202124621A (en) | 2021-07-01 |
| CN113004800B (en) | 2024-04-12 |
| TWI861305B (en) | 2024-11-11 |
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