CN112959223A - Chemical mechanical polishing apparatus and chemical mechanical polishing method - Google Patents
Chemical mechanical polishing apparatus and chemical mechanical polishing method Download PDFInfo
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- CN112959223A CN112959223A CN202110196311.XA CN202110196311A CN112959223A CN 112959223 A CN112959223 A CN 112959223A CN 202110196311 A CN202110196311 A CN 202110196311A CN 112959223 A CN112959223 A CN 112959223A
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- grinding
- chemical mechanical
- mechanical polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 243
- 239000000126 substance Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 239000012530 fluid Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 26
- 239000002002 slurry Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 16
- 238000009499 grossing Methods 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000007517 polishing process Methods 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing device and a chemical mechanical polishing method. The chemical mechanical polishing apparatus includes: a polishing pad; the transmission structure is positioned above the grinding pad and used for transmitting grinding liquid to the surface of the grinding pad; and the smearing device is used for dispersing the grinding fluid on the surface of the grinding pad in a smearing mode and improving the distribution uniformity of the grinding fluid on the surface of the grinding pad. The invention improves the distribution uniformity of the grinding fluid on the surface of the grinding pad, improves the chemical mechanical grinding effect of the wafer and ensures the continuous and stable operation of the semiconductor processing procedure.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing device and a chemical mechanical polishing method.
Background
Chemical Mechanical Polishing (CMP) is an important process step in semiconductor manufacturing. Chemical mechanical polishing is a process in which a chemical reaction process and a mechanical polishing process work together. During the grinding process, the grinding head applies a certain pressure on the back surface of the wafer, so that the front surface of the wafer is tightly attached to the grinding pad. The polishing pad rotates, and the polishing head drives the wafer and the polishing pad to rotate in the same direction, so that the front surface of the wafer and the surface of the polishing pad generate mechanical friction. In the grinding process, a film layer with a certain thickness on the surface of the wafer is removed through a series of complicated mechanical and chemical actions, so that the purpose of flattening the wafer is achieved.
The quality of the CMP is closely related to many factors, and among them, the uniformity of the distribution of the slurry on the surface of the polishing pad is an important aspect of the CMP. However, in the current chemical mechanical polishing process, due to the structural limitation of the chemical mechanical polishing apparatus, the polishing slurry is unevenly distributed on the surface of the polishing pad, thereby affecting the polishing effect of the wafer, and even affecting the smooth performance of the subsequent semiconductor processing procedure in severe cases.
Therefore, how to improve the uniformity of the distribution of the polishing slurry on the surface of the polishing pad and improve the chemical mechanical polishing effect of the wafer is a technical problem to be solved.
Disclosure of Invention
The invention provides a chemical mechanical polishing device and a chemical mechanical polishing method, which are used for solving the problem of poor uniformity of distribution of polishing liquid on the surface of a polishing pad in the prior art, so as to improve the chemical mechanical polishing effect of a wafer and ensure continuous and stable progress of semiconductor processing procedures.
In order to solve the above problems, the present invention provides a chemical mechanical polishing apparatus, comprising:
a polishing pad;
the transmission structure is positioned above the grinding pad and used for transmitting grinding liquid to the surface of the grinding pad;
and the smearing device is used for dispersing the grinding fluid on the surface of the grinding pad in a smearing mode and improving the distribution uniformity of the grinding fluid on the surface of the grinding pad.
Optionally, the method further includes:
the dresser is positioned above the grinding pad and used for dressing the surface of the grinding pad;
the even ware sets up in between the trimmer and the transmission structure.
Optionally, the troweling device includes:
a substrate;
and the bulge part comprises a plurality of bulges which are convexly arranged on the surface of the substrate, and is used for contacting the grinding pad so as to disperse the grinding liquid on the surface of the grinding pad.
Optionally, the trowel extends from the edge of the polishing pad to the center of the polishing pad;
the protrusions are at least capable of contacting an edge of the polishing pad.
Optionally, the material of the protrusion is a flexible material.
Optionally, the material of the protrusions is polypropylene glycol.
Optionally, the troweling device further comprises:
and the driving part is connected with the substrate and is used for driving the substrate to reciprocate along the direction parallel to the surface of the grinding pad.
Optionally, the polishing pad rotates along a preset direction;
the trowel is located downstream of the transport structure in a direction of rotation along the polishing pad.
In order to solve the above problems, the present invention further provides a chemical mechanical polishing method, comprising the steps of:
delivering the polishing slurry to a surface of a polishing pad;
and dispersing the grinding fluid on the surface of the grinding pad in a smearing mode, so that the distribution uniformity of the grinding fluid on the surface of the grinding pad is improved.
Optionally, the method specifically comprises the following steps:
transmitting the grinding fluid to the surface of a grinding pad rotating along a preset direction;
and dispersing the polishing liquid by a smearing mode at the downstream of a landing point of the polishing liquid on the surface of the polishing pad along the rotation direction of the polishing pad.
Optionally, the specific step of dispersing the polishing solution on the surface of the polishing pad in a smearing manner includes:
and providing a leveling device, and dispersing the grinding fluid on the surface of the grinding pad through the contact of the leveling device and the grinding pad.
Optionally, the specific step of dispersing the polishing solution on the surface of the polishing pad in a smearing manner further includes:
and driving the even coater to reciprocate along the direction parallel to the surface of the grinding pad.
Optionally, the trowel extends from the edge of the polishing pad to the center of the polishing pad; the specific steps of dispersing the polishing solution on the surface of the polishing pad in a smearing manner include:
the even device is at least contacted with the edge of the grinding pad, and at least disperses the grinding liquid positioned at the edge of the grinding pad.
Optionally, the troweling device includes:
a substrate;
and the bulge part comprises a plurality of bulges which are convexly arranged on the surface of the substrate, and is used for contacting the grinding pad so as to disperse the grinding liquid on the surface of the grinding pad.
Optionally, the material of the protrusion is a flexible material.
According to the chemical mechanical polishing device and the chemical mechanical polishing method provided by the invention, after the transmission structure transmits the polishing liquid to the surface of the polishing pad, the polishing liquid on the surface of the polishing pad is dispersed by the leveling device in a leveling mode, so that the distribution uniformity of the polishing liquid on the surface of the polishing pad is improved, the chemical mechanical polishing effect of a wafer is improved, and the continuous and stable operation of a semiconductor manufacturing procedure is ensured.
Drawings
FIG. 1 is a schematic top view of a chemical mechanical polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a trowel in an embodiment of the present invention;
FIG. 3 is a flow chart of a chemical mechanical polishing method according to an embodiment of the present invention.
Detailed Description
The following describes embodiments of a chemical mechanical polishing apparatus and a chemical mechanical polishing method according to the present invention in detail with reference to the accompanying drawings.
In the chemical mechanical polishing process, the distribution of the polishing slurry on the surface of the polishing pad and the flow field are important factors affecting the chemical mechanical polishing rate and are also key aspects affecting the uniformity of the wafer surface. However, the polishing slurry currently transported to the surface of the polishing pad by the transport pipeline cannot be rapidly and uniformly distributed on the surface of the polishing pad, so that the polishing rate is reduced, and the surface of the wafer is prone to be non-uniform. Furthermore, the distribution of the polishing slurry at the edge of the polishing pad is more non-uniform than the distribution of the polishing slurry at the center of the polishing pad, which results in a more unstable polishing rate of the film layer at the edge portion of the wafer, and finally results in a less uniform thickness at the edge portion of the wafer after polishing than at the center portion.
In order to improve the uniformity of the distribution of the polishing slurry on the surface of the polishing pad and improve the chemical mechanical polishing rate and the polishing effect of the wafer, the present embodiment provides a chemical mechanical polishing apparatus, and fig. 1 is a schematic top view of the chemical mechanical polishing apparatus according to the present embodiment. As shown in fig. 1, the chemical mechanical polishing apparatus according to the present embodiment includes:
a polishing pad 10;
a transmission structure 11 located above the polishing pad 10 for transmitting the polishing slurry to the surface of the polishing pad 10;
and a leveling device 12 for dispersing the polishing liquid on the surface of the polishing pad 10 in a leveling manner to improve the uniformity of the distribution of the polishing liquid on the surface of the polishing pad 10.
Specifically, the chemical mechanical polishing apparatus includes a polishing pad 10, a polishing head (not shown in fig. 1 and 2), and a transport structure 11. During the cmp process, the polishing pad 10 rotates in a predetermined direction, for example, in a counterclockwise direction as shown by the solid arrow in fig. 1. The transmission structure 11 is disposed above the polishing pad 10, and the polishing liquid flows from an opening at the end of the transmission structure 11 to the surface of the polishing pad 10. The polishing head adsorbs a wafer 14 to be polished, applies a pressure to make the wafer 14 tightly attached to the surface of the polishing pad 10, and drives the wafer 14 to rotate along the same direction (for example, both directions are counterclockwise) as the rotation direction of the polishing pad 10.
The embodiment of the invention is characterized in that the troweling device 12 is disposed, after the transmission structure 11 transmits the polishing slurry to the surface of the polishing pad 10, the troweling device 12 directly contacts with the surface of the polishing pad 10, and disperses the polishing slurry on the surface of the polishing pad 10 by friction (i.e. troweling) with the surface of the polishing pad 10, so as to realize rapid dispersion and troweling of the polishing slurry on the surface of the polishing pad 10, improve the uniformity of the distribution of the polishing slurry on the surface of the polishing pad 10, and further improve the chemical mechanical polishing rate and the chemical mechanical polishing effect of the wafer 10.
Optionally, the chemical mechanical polishing apparatus further includes:
a dresser 13 located above the polishing pad 10 for dressing the surface of the polishing pad 10;
the troweling device 12 is disposed between the finisher 13 and the conveying structure 11.
Specifically, the dresser 13 is configured to dress the polishing pad 10 so that the surface of the polishing pad 10 has a desired roughness, which helps to improve the polishing effect and the polishing rate of the wafer. In the present embodiment, the troweling device 12 is disposed between the dresser 13 and the conveying structure 11, so that on one hand, the problem of slurry splashing caused by dressing the polishing pad 10 by the dresser 13 can be avoided; on the other hand, the polishing liquid can be dispersed and smeared uniformly in time and quickly after reaching the polishing pad 10, which contributes to further improvement in uniformity of distribution of the polishing liquid on the surface of the polishing pad 10.
Optionally, the troweling device 12 includes:
a substrate 121;
and a protrusion part including a plurality of protrusions 122 protruding from the surface of the substrate 121, the protrusion part being configured to contact the polishing pad 10 to disperse the polishing slurry on the surface of the polishing pad 10.
Specifically, the trowel 12 includes a substrate 121, the substrate 121 has a first surface and a second surface (the second surface of the substrate is shown in the view of fig. 1) that are distributed oppositely, the first surface of the substrate 121 has a protruding portion thereon, and the protruding portion includes a plurality of the protrusions 122 that are protruded on the first surface of the substrate 121. In the process of chemical mechanical polishing, the protrusions are in contact with the surface of the polishing pad 10, and the protrusions 122 in the protrusions are in contact with and rub against the polishing liquid on the polishing pad 10, so that the polishing liquid is uniformly spread. The specific shape of the cross section of the protrusion 122 can be set by a person skilled in the art according to actual needs, and for example, the cross section of the protrusion 122 is circular, and the protrusion 122 is a cylindrical structure as a whole in the present embodiment. A plurality of the protrusions 122 are uniformly distributed on the first surface of the substrate 121. The skilled person can set the specific size of the protrusions 122 and the arrangement of the protrusions 122 according to actual needs, for example, the size of the polishing pad 10, the roughness of the surface of the polishing pad 10, and the type of the polishing liquid are selected. The plurality of the present embodiment means two or more. The more the number of the bulges is, the more dense the arrangement is, and the better the smearing effect is.
The present embodiment will be described by way of example in which the protruding portion of the trowel includes a plurality of protrusions. In other embodiments, the protruding portion of the trowel may also include and only include a protrusion on the surface of the substrate, and the protrusion has a relatively large area, so that the polishing liquid is smoothed by the friction between the protrusion and the polishing pad.
Optionally, the trowel 12 extends from the edge of the polishing pad 10 to the center of the polishing pad 10;
the protrusions are capable of contacting at least the edge of the polishing pad 10.
Specifically, the polishing liquid is distributed more unevenly at the edge of the polishing pad 10 than at the center of the polishing pad 10, and the polishing effect on the edge of the wafer 14 is more affected. Therefore, in order to improve the edge profile of the wafer 14 and improve the uniformity of the edge of the wafer 14 after polishing, the embodiment sets the protrusions to be capable of contacting at least the edge of the polishing pad 10. It can be understood by those skilled in the art that the improvement effect on the distribution uniformity of the polishing liquid is the best when the length of the protrusions is equal to the radius of the circular polishing pad 10.
The material of the protrusions 122 should not damage the polishing pad 10 and not be easily corroded by the polishing liquid, i.e., the protrusions 122 should have various characteristics such as wear resistance, flexibility, smoothness, oil resistance, and solvent resistance. In order to reduce the cost and simplify the manufacturing process, the material of the protrusion 122 is optionally a flexible material.
Optionally, the material of the protrusion 122 is polypropylene glycol.
Optionally, the troweling device 12 further includes:
and a driving part connected to the substrate 121 for driving the substrate 121 to reciprocate along a direction parallel to the surface of the polishing pad 10.
Specifically, by providing the driving portion and controlling the protrusion to reciprocate in a direction parallel to the surface of the polishing pad 10, for example, the direction indicated by the dotted arrow in fig. 1, so as to define the motion path of the substrate 121, not only the polishing liquid can be smoothed, but also the wiper 12 can be effectively prevented from colliding with the dresser 13 and/or the conveying structure 11.
Optionally, the polishing pad 10 rotates along a preset direction;
the trowel 12 is located downstream of the transport structure 11 in the direction of rotation of the polishing pad 10.
For example, the polishing pad 10 rotates counterclockwise as shown by the solid arrow in fig. 1, the troweling device 12 is located downstream of the conveying structure 11, that is, after the conveying structure 11 conveys the polishing slurry to the surface of the polishing pad 10, the troweling device 12 first scrubs the polishing slurry, and then the polishing slurry reaches the wafer 14, so as to further improve the polishing rate and the chemical mechanical polishing effect.
Moreover, the present embodiment also provides a chemical mechanical polishing method. FIG. 3 is a flow chart of a chemical mechanical polishing method according to an embodiment of the present invention. The chemical mechanical polishing method provided in this embodiment may be implemented by using a chemical mechanical polishing apparatus as shown in fig. 1 and 2. As shown in fig. 1 to 3, the chemical mechanical polishing method provided in this embodiment includes the following steps:
step S31, delivering the polishing slurry to the surface of a polishing pad 10;
step S32 is to improve the uniformity of the distribution of the polishing liquid on the surface of the polishing pad 10 by dispersing the polishing liquid on the surface of the polishing pad 10 in a uniform manner.
Optionally, the method specifically comprises the following steps:
transmitting the polishing slurry to the surface of a polishing pad 10 rotating in a predetermined direction;
the polishing liquid is dispersed by a wiping manner downstream of a landing point of the polishing liquid on the surface of the polishing pad 10 in a rotation direction of the polishing pad 10.
Optionally, the specific steps of dispersing the polishing solution on the surface of the polishing pad 10 in a smearing manner include:
providing a leveling device 12, and dispersing the polishing liquid on the surface of the polishing pad 10 through the contact between the leveling device 12 and the polishing pad 10.
Optionally, the specific steps of dispersing the polishing solution on the surface of the polishing pad 10 in a uniform manner further include:
the troweling device 12 is driven to reciprocate in a direction parallel to the surface of the polishing pad 10.
Optionally, the trowel 12 extends from the edge of the polishing pad 10 to the center of the polishing pad 10; the specific steps of dispersing the polishing liquid on the surface of the polishing pad 10 by a smoothing method include:
the troweling device 12 is in contact with at least the edge of the polishing pad, and disperses the polishing liquid at least at the edge of the polishing pad 10.
Optionally, the troweling device 12 includes:
a substrate 121;
and the protruding part comprises a plurality of protrusions 122 protruding from the surface of the substrate, and is used for contacting with the polishing pad 10 to disperse the polishing liquid on the surface of the polishing pad.
Optionally, the material of the protrusion 122 is a flexible material.
In the chemical mechanical polishing apparatus and the chemical mechanical polishing method according to the present embodiment, after the transmission structure transmits the polishing slurry to the surface of the polishing pad, the polishing slurry on the surface of the polishing pad is dispersed by the leveling device in a leveling manner, so that the uniformity of the distribution of the polishing slurry on the surface of the polishing pad is improved, the chemical mechanical polishing effect of the wafer is improved, and the continuous and stable progress of the semiconductor process is ensured.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (15)
1. A chemical mechanical polishing apparatus, comprising:
a polishing pad;
the transmission structure is positioned above the grinding pad and used for transmitting grinding liquid to the surface of the grinding pad;
and the smearing device is used for dispersing the grinding fluid on the surface of the grinding pad in a smearing mode and improving the distribution uniformity of the grinding fluid on the surface of the grinding pad.
2. The chemical mechanical polishing apparatus as recited in claim 1, further comprising:
the dresser is positioned above the grinding pad and used for dressing the surface of the grinding pad;
the even ware sets up in between the trimmer and the transmission structure.
3. The chemical mechanical polishing apparatus of claim 1, wherein the trowel comprises:
a substrate;
and the bulge part comprises a plurality of bulges which are convexly arranged on the surface of the substrate, and is used for contacting the grinding pad so as to disperse the grinding liquid on the surface of the grinding pad.
4. The chemical mechanical polishing apparatus of claim 1, wherein the leveler extends from an edge of the polishing pad to a center of the polishing pad;
the protrusions are at least capable of contacting an edge of the polishing pad.
5. The chemical mechanical polishing apparatus of claim 3, wherein the material of the protrusions is a flexible material.
6. The chemical mechanical polishing apparatus of claim 5, wherein the material of the protrusions is polypropylene glycol.
7. The chemical mechanical polishing apparatus of claim 3, wherein the trowel further comprises:
and the driving part is connected with the substrate and is used for driving the substrate to reciprocate along the direction parallel to the surface of the grinding pad.
8. The chemical mechanical polishing apparatus of claim 1, wherein the polishing pad rotates in a predetermined direction;
the trowel is located downstream of the transport structure in a direction of rotation along the polishing pad.
9. A chemical mechanical polishing method is characterized by comprising the following steps:
delivering the polishing slurry to a surface of a polishing pad;
and dispersing the grinding fluid on the surface of the grinding pad in a smearing mode, so that the distribution uniformity of the grinding fluid on the surface of the grinding pad is improved.
10. The chemical mechanical polishing method of claim 9, comprising the steps of:
transmitting the grinding fluid to the surface of a grinding pad rotating along a preset direction;
and dispersing the polishing liquid by a smearing mode at the downstream of a landing point of the polishing liquid on the surface of the polishing pad along the rotation direction of the polishing pad.
11. The chemical mechanical polishing method according to claim 9, wherein the step of dispersing the polishing liquid on the surface of the polishing pad by a smoothing method comprises:
and providing a leveling device, and dispersing the grinding fluid on the surface of the grinding pad through the contact of the leveling device and the grinding pad.
12. The chemical mechanical polishing method of claim 11, wherein the step of dispersing the polishing liquid on the surface of the polishing pad by a smoothing method further comprises:
and driving the even coater to reciprocate along the direction parallel to the surface of the grinding pad.
13. The chemical mechanical polishing method of claim 11, wherein the leveler extends from the edge of the polishing pad to the center of the polishing pad; the specific steps of dispersing the polishing solution on the surface of the polishing pad in a smearing manner include:
the even device is at least contacted with the edge of the grinding pad, and at least disperses the grinding liquid positioned at the edge of the grinding pad.
14. The chemical mechanical polishing method of claim 11, wherein the trowel comprises:
a substrate;
and the bulge part comprises a plurality of bulges which are convexly arranged on the surface of the substrate, and is used for contacting the grinding pad so as to disperse the grinding liquid on the surface of the grinding pad.
15. The chemical mechanical polishing method of claim 14, wherein the material of the protrusion is a flexible material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110196311.XA CN112959223A (en) | 2021-02-22 | 2021-02-22 | Chemical mechanical polishing apparatus and chemical mechanical polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110196311.XA CN112959223A (en) | 2021-02-22 | 2021-02-22 | Chemical mechanical polishing apparatus and chemical mechanical polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112959223A true CN112959223A (en) | 2021-06-15 |
Family
ID=76285436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110196311.XA Pending CN112959223A (en) | 2021-02-22 | 2021-02-22 | Chemical mechanical polishing apparatus and chemical mechanical polishing method |
Country Status (1)
| Country | Link |
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| CN (1) | CN112959223A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115488772A (en) * | 2022-10-09 | 2022-12-20 | 北京烁科精微电子装备有限公司 | Grinding liquid titration device, mechanism, system and grinding method |
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| CN1240696A (en) * | 1998-06-30 | 2000-01-12 | 日本电气株式会社 | Surface polishing machine |
| CN1246402A (en) * | 1998-08-28 | 2000-03-08 | 世大积体电路股份有限公司 | chemical mechanical grinding machine |
| WO2006022452A2 (en) * | 2004-08-27 | 2006-03-02 | Ebara Corporation | Polishing apparatus and polishing method |
| JP2008036744A (en) * | 2006-08-03 | 2008-02-21 | Disco Abrasive Syst Ltd | Polishing device |
| CN106607765A (en) * | 2017-01-19 | 2017-05-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Compact adjustable polishing solution conveying arm and working engineering thereof |
| CN109414801A (en) * | 2016-06-24 | 2019-03-01 | 应用材料公司 | Slurry distribution apparatus for chemically mechanical polishing |
| JP2020131381A (en) * | 2019-02-21 | 2020-08-31 | 株式会社荏原製作所 | Polishing device, polishing method, and recording medium with polishing liquid supply position decision program recorded thereon |
| CN111805412A (en) * | 2020-07-17 | 2020-10-23 | 中国科学院微电子研究所 | A polishing liquid dispenser and polishing device |
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2021
- 2021-02-22 CN CN202110196311.XA patent/CN112959223A/en active Pending
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|---|---|---|---|---|
| JPS63283862A (en) * | 1987-05-15 | 1988-11-21 | Shintou Bureetaa Kk | Polishing method and device therefor |
| CN1240696A (en) * | 1998-06-30 | 2000-01-12 | 日本电气株式会社 | Surface polishing machine |
| CN1246402A (en) * | 1998-08-28 | 2000-03-08 | 世大积体电路股份有限公司 | chemical mechanical grinding machine |
| WO2006022452A2 (en) * | 2004-08-27 | 2006-03-02 | Ebara Corporation | Polishing apparatus and polishing method |
| JP2008036744A (en) * | 2006-08-03 | 2008-02-21 | Disco Abrasive Syst Ltd | Polishing device |
| CN109414801A (en) * | 2016-06-24 | 2019-03-01 | 应用材料公司 | Slurry distribution apparatus for chemically mechanical polishing |
| CN106607765A (en) * | 2017-01-19 | 2017-05-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Compact adjustable polishing solution conveying arm and working engineering thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115488772A (en) * | 2022-10-09 | 2022-12-20 | 北京烁科精微电子装备有限公司 | Grinding liquid titration device, mechanism, system and grinding method |
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Application publication date: 20210615 |