CN112941516A - Precise control type etching solution and etching method thereof - Google Patents

Abstract

The invention discloses a precisely controlled etching solution and an etching method thereof, the precisely controlled etching solution comprises 25-30 parts of hydrogen peroxide stabilizer, 3-4 parts of hydrogen peroxide, 0.8-5 parts of ferric trichloride, 1-1.3 parts of organic acid, 0.2-0.4 part of etching inhibitor, 2-5 parts of thickening auxiliary agent, 0.2-0.4 part of chelating agent and 72-90 parts of deionized water, the etching inhibitor adopts a long-chain ketone compound, the thickening auxiliary agent adopts ethanolamine chloride, the chelating agent adopts a bidentate chelate, so that the integral precisely controlled etching solution obtains enough viscosity, the etching mode is to limit the movement range of the precisely controlled etching solution, keep the mobility of the precisely controlled etching solution by utilizing a heating and blowing device and carry out etching operation on the premise of precise control, and the invention has the advantages that the etching solution can be stably controlled to advance, and the technical effect of improving the precision of etching operation control is realized.

Description

Precise control type etching solution and etching method thereof

Technical Field

The invention relates to the field of etching processes, in particular to a precisely controlled etching solution and an etching method thereof.

Background

Along with the rapid development in the electronic field, the PCB is also more and more widely used, the etching is an important process in the production process of the circuit board, generally, concentrated hydrochloric acid is adopted for etching in the prior art, but the concentrated hydrochloric acid is extremely volatile in the air, and because of the strong volatility of the concentrated hydrochloric acid, the volatilized hydrogen chloride gas can be combined with the water vapor in the air to form hydrochloric acid smoke to be diffused in the air, so that the production workshop has strong pungent taste, the operator inhales the hydrochloric acid smoke to influence the health, the tail gas is directly discharged to pollute the environment, the environment protection and safety requirements are not met, and the cost treatment of the tail gas is high. In addition, the etching rate using concentrated hydrochloric acid is slow. Therefore, how to overcome the defects in the existing acidic etching solution, an environment-friendly acidic etching solution is developed and designed, the workshop environment is improved, the environmental pollution is reduced, and the problem of controlling the etching rate of the circuit board becomes a problem to be solved urgently for enterprises.

Disclosure of Invention

The purpose of the invention is as follows: the invention aims to provide a precisely controlled etching solution and an etching method thereof aiming at the defects of the prior art.

The technical scheme is as follows: the invention relates to a precisely controlled etching solution, which comprises the following components:

25-30 parts of a hydrogen peroxide stabilizer, 3-4 parts of hydrogen peroxide, 0.8-5 parts of ferric trichloride, 1-1.3 parts of organic acid, 0.2-0.4 part of an etching inhibitor, 2-5 parts of a thickening auxiliary agent, 0.2-0.4 part of a chelating agent and 72-90 parts of deionized water;

the etching inhibitor adopts a long-chain ketone compound, the thickening auxiliary agent adopts ethanolamine chloride, the chelating agent adopts a bidentate chelate, and the organic acid adopts at least one of oxalic acid, tartaric acid, citric acid, acetic acid, glycolic acid, maleic acid, succinic acid, malic acid, salicylic acid, benzoic acid, succinic acid and lactic acid;

the bidentate chelate is at least one of ethylenediamine, 2' -bipyridine, 1, 10-phenanthroline and oxalate;

the thickening auxiliary agent adopts one of monoethanolamine chloride or diethanolamine chloride;

and adjusting the pH value to 3-5 in the whole liquid phase environment.

Preferably, the bidentate chelate is 2,2' -bipyridine, and the organic acid is salicylic acid.

Preferably, oxalic acid is used as the bidentate chelate and the organic acid.

Preferably, the thickening aid is a diethanolamine chloride.

The etching method using the precisely controlled etching solution comprises the following steps:

s1, defining the range of the etching pattern, and performing and finishing screen printing;

s2, configuring an embedded limit frame along the etching line constructed by screen printing;

s3, injecting a precisely controlled etching solution along the embedded limit frame;

s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.

Compared with the prior art, the invention has the following beneficial effects: the etching inhibitor adopts a long-chain ketone-based compound, the thickening auxiliary agent adopts ethanolamine chloride, and the chelating agent adopts a bidentate chelate, so that the integral precisely-controlled etching solution obtains enough viscosity, the etching mode adopts a mode of limiting the movement range of the precisely-controlled etching solution, keeping the mobility of the precisely-controlled etching solution by using a heating and blowing device and carrying out etching operation on the premise of precise control, and the technical effect of improving the precision of etching operation control is realized.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the indicated orientations and positional relationships, merely to facilitate description of the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and is not to be construed as limiting the invention.

In the present invention, unless otherwise specifically stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication connection; either directly or indirectly through intervening media, either internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The technical solution of the present invention will be described in detail below with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.

Example 1: a precisely controlled etching solution comprises the following components:

25 parts of hydrogen peroxide stabilizer, 3 parts of hydrogen peroxide, 0.8 part of ferric trichloride, 1 part of salicylic acid, 0.2 part of long-chain ketone compound, 2 parts of diethanolamide chloride, 0.2 part of 2,2' -bipyridine and 72 parts of deionized water;

the etching method using the precisely controlled etching solution comprises the following steps:

s1, defining the range of the etching pattern, and performing and finishing screen printing;

s2, configuring an embedded limit frame along the etching line constructed by screen printing;

s3, injecting a precisely controlled etching solution along the embedded limit frame;

s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.

Example 2: a precisely controlled etching solution comprises the following components:

30 parts of hydrogen peroxide stabilizer, 4 parts of hydrogen peroxide, 5 parts of ferric trichloride, 1.7 parts of oxalic acid, 0.2-0.4 part of long-chain ketone compound, 2-5 parts of monoethanolamine chloride and 72-90 parts of deionized water;

the etching method using the precisely controlled etching solution comprises the following steps:

s1, defining the range of the etching pattern, and performing and finishing screen printing;

s2, configuring an embedded limit frame along the etching line constructed by screen printing;

s3, injecting a precisely controlled etching solution along the embedded limit frame;

s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.

The technical effect embodied by the whole set of technical scheme is that the etching inhibitor adopts a long-chain ketone-based compound, the thickening auxiliary agent adopts ethanolamine chloride, and the chelating agent adopts a bidentate chelate, so that the integral precisely-controlled etching solution obtains enough viscosity, the etching mode adopts a mode of limiting the motion range of the precisely-controlled etching solution, keeping the mobility of the precisely-controlled etching solution by using a heating and blowing device and carrying out etching operation on the premise of precise control, the technical effect of improving the precision of etching operation control is realized, and the technical progress is obvious.

In the present invention, unless otherwise explicitly specified or limited, the first feature "on" or "under" the second feature may be directly contacting the first feature and the second feature or indirectly contacting the first feature and the second feature through an intermediate. Also, a first feature "on," "above," and "over" a second feature may mean that the first feature is directly above or obliquely above the second feature, or that only the first feature is at a higher level than the second feature. A first feature "under," "below," and "beneath" a second feature may be directly or obliquely under the first feature or may simply mean that the first feature is at a lower level than the second feature. In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example" or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example.

Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (5)

1. A precisely controlled etching solution is characterized in that: comprises the following components:

25-30 parts of a hydrogen peroxide stabilizer, 3-4 parts of hydrogen peroxide, 0.8-5 parts of ferric trichloride, 1-1.3 parts of an organic acid, 0.2-0.4 part of an etching inhibitor, 2-5 parts of a thickening auxiliary agent, 0.2-0.4 part of a chelating agent and 72-90 parts of deionized water;

the etching inhibitor adopts a long-chain ketone compound, the thickening auxiliary agent adopts ethanolamine chloride, the chelating agent adopts a bidentate chelate, and the organic acid adopts at least one of oxalic acid, tartaric acid, citric acid, acetic acid, glycolic acid, maleic acid, succinic acid, malic acid, salicylic acid, benzoic acid, succinic acid and lactic acid;

the bidentate chelate is at least one of ethylenediamine, 2' -bipyridine, 1, 10-phenanthroline and oxalate;

the thickening auxiliary agent adopts one of monoethanolamine chloride or diethanolamine chloride;

and adjusting the pH value to 3-5 in the whole liquid phase environment.

2. The precisely controlled etching solution of claim 1, wherein: the bidentate chelate adopts 2,2' -bipyridyl, and the organic acid adopts salicylic acid.

3. The precisely controlled etching solution of claim 1, wherein: the bidentate chelate and the organic acid both adopt oxalic acid.

4. The precisely controlled etching solution of claim 1, wherein: the thickening auxiliary agent adopts diethanolamine chloride.

5. The etching method using the precisely controlled etching solution according to claims 1 to 5, characterized in that: the method comprises the following steps:

s1, defining the range of the etching pattern, and performing and finishing screen printing;

s2, configuring an embedded limit frame along the etching line constructed by screen printing;

s3, injecting a precisely controlled etching solution along the embedded limit frame;

s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.