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CN112928020A - Etching method of gold-nickel film and application thereof - Google Patents

Etching method of gold-nickel film and application thereof Download PDF

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Publication number
CN112928020A
CN112928020A CN202110184230.8A CN202110184230A CN112928020A CN 112928020 A CN112928020 A CN 112928020A CN 202110184230 A CN202110184230 A CN 202110184230A CN 112928020 A CN112928020 A CN 112928020A
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acid
etching
gold
film layer
nickel film
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Inventor
邱柱
杜冰
梁豹
张兵
赵建龙
向文胜
朱坤
顾群艳
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Jiangsu Aisen Semiconductor Material Co ltd
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Jiangsu Aisen Semiconductor Material Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

本发明提供了一种金镍膜层的蚀刻方法及其应用，所述蚀刻方法包括以下步骤：使用第一蚀刻液、第二蚀刻液混合溶液对金镍膜层进行蚀刻；或者使用第一蚀刻液对金膜层进行蚀刻，之后使用第二蚀刻液对镍膜层进行蚀刻。本发明提供的蚀刻方法蚀刻速度易控制、操作便捷、安全、环保、成本低、使用寿命长，对底材无伤。

Figure 202110184230

The invention provides an etching method for a gold-nickel film layer and an application thereof. The etching method comprises the following steps: using a first etching solution and a mixed solution of a second etching solution to etch the gold-nickel film layer; or using a first etching solution The gold film layer is etched with the liquid, and then the nickel film layer is etched with the second etchant. The etching method provided by the invention is easy to control the etching speed, convenient to operate, safe, environmentally friendly, low in cost, long in service life, and harmless to the substrate.

Figure 202110184230

Description

Etching method of gold-nickel film and application thereof
Technical Field
The invention belongs to the field of semiconductor manufacturing, particularly relates to an etching method of a gold-nickel film layer and application thereof, and particularly relates to an etching method of a gold-nickel film layer with a good etching effect and application thereof.
Background
In advanced package manufacturing, it is sometimes necessary to surface treat the chip with electrodes that are aluminum pads to a solderable metal. One low cost method is to selectively deposit nickel and gold, i.e., electroless nickel gold (ENIG), on an aluminum bonding pad using a chemical plating process, which is based on immersing a wafer in different chemical solutions for processing, selectively depositing metal on an aluminum bonding pad, and depositing a thin Au layer on the surface of the aluminum bonding pad after depositing a Ni layer to prevent the Ni from being oxidized. However, brittle Au-Ni-Sn intermetallic compounds are formed at the interface between the Ni layer and the solder. This can affect the reliability of the interconnection point for long term use. The Au layer thickness is therefore generally made very thin. In addition, electroless nickel gold is also a kind of surface treatment in the PCB manufacturing process, and in which case electroless nickel gold is required, specifically according to the needs of customers. Advanced packaging or PCB manufacturing processes all place high requirements on the electroless nickel-gold process for flatness, uniformity, solderability or corrosion resistance. However, in the electroless nickel-gold process, there are some cases where defects such as plating bleeding, plating missing, roughness of the metal layer, whitening, corrosion, pinholes, and the like occur, and thus, the defective products need to be reworked. In addition, the advanced packaging process also requires a process for etching gold and nickel.
Most or the traditional etching methods for stripping gold and nickel films on the market generally use aqua regia containing cyanide ions and hydrochloric acid and nitric acid, a mixture of sulfuric acid and hydrogen peroxide (SPM), or potassium iodide/iodine for etching. Cyanide ions are highly toxic and have great danger to personnel and environment when in use; the aqua regia and the SPM have the defects of strong acidity, very strong corrosivity, over-high etching speed, difficulty in control, attack on other substrates, short service life and the like; the use of potassium iodide/iodine with higher concentration for gold etching also has the disadvantages of higher cost, difficult treatment of waste liquid and the like.
CN106702385B discloses a selective etching solution for nickel or nickel alloy, a preparation method and an application thereof, wherein the etching solution comprises the following components in parts by weight: ferric trichloride, ferric trifluoroacetylacetone, sulfamic acid, adipic acid, gamma-aminopropyltriethoxysilane, potassium thiosulfate, hydrofluoric acid, imidazoline quaternary ammonium salt and deionized water. The etching solution provided by the invention has the advantages of proper etching speed on nickel or nickel alloy, almost no corrosion on copper, strong selectivity, bright surface of the etched copper plate, no precipitation, flatness and no side etching.
CN101717935B discloses an etching method of a metal layer of a substrate, which is suitable for being performed using an etching apparatus. The etching equipment comprises at least one etching reaction chamber, a plurality of liquid conveying pipes arranged above the etching reaction chamber and a plurality of nozzles arranged on each liquid conveying pipe. First, a substrate having a metal layer is provided in an etching chamber, wherein the metal layer of the substrate has at least one region. Then, the substrate is read to obtain the first specification data. The first specification data includes a size and a thickness of a region of the metal layer. Finally, a first etching process is performed. The liquid delivery pipes deliver the etching liquid to the nozzles. Each nozzle adjusts and controls the spraying pressure and the spraying time of the etching liquid sprayed to the area of the metal layer according to the first specification data.
The existing etching method for gold and nickel has the defects of large environmental pollution, poor etching effect and corrosion to a substrate. Therefore, how to provide an etching method for a gold-nickel film layer with good etching effect becomes a problem to be solved urgently.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide an etching method of a gold-nickel film layer and application thereof, in particular to an etching method of a gold-nickel film layer with good etching effect and application thereof. The etching method provided by the invention has the advantages of easily controlled etching speed, convenient and fast operation, safety, environmental protection, low cost, long service life and no damage to substrates.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, the invention provides an etching method of a gold-nickel film layer, which comprises the following steps: etching the gold-nickel film layer by using a mixed solution of a first etching solution and a second etching solution;
or the gold film layer is etched by using the first etching solution, and then the nickel film layer is etched by using the second etching solution.
The first etching solution includes a halogen ion compound and water.
The second etching solution includes water, a nitrate ion compound, and/or an organic acid.
The gold film layer and the nickel film layer can be etched from the substrate by utilizing the first etching solution and the second etching solution, and meanwhile, the etching speed is easy to control, the operation is convenient and fast, the etching solution is safe and environment-friendly, the cost is low, the service life is long, and the substrate is not damaged; the mixed solution of the first etching solution and the second etching solution is used for etching the gold-nickel film layer, so that a better etching effect is achieved.
Preferably, the mass fraction of the halogen ion compound is 0.01 to 1.5%, for example, 0.01%, 0.05%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, or 1.5%, etc., but not limited to the above-listed values, and other values not listed in the above-mentioned numerical range are also applicable.
The halogen ion compound with the specific composition can remarkably reduce the use of the halogen ion compound in the first etching solution, remarkably reduce the pollution to the environment, improve the safety and maintain the etching effect of the first etching solution.
Preferably, the halide ion compound includes any one or a combination of at least two of inorganic acid, inorganic salt or organic salt, such as a combination of inorganic acid and inorganic salt, a combination of inorganic acid and organic salt or a combination of inorganic salt and organic salt, etc., but is not limited to the above-listed combinations, and other combinations not listed in the above-mentioned combination range are also applicable.
Preferably, the inorganic acid includes any one or a combination of at least two of hydrochloric acid, hydrobromic acid, or hydroiodic acid, such as a combination of hydrochloric acid and hydrobromic acid, a combination of hydrobromic acid and hydroiodic acid, or a combination of hydrochloric acid and hydroiodic acid, and the like, but is not limited to the above-listed combinations, and other combinations not listed within the above-listed combinations are equally applicable, preferably hydrochloric acid.
Preferably, the inorganic salt includes any one or a combination of at least two of ammonium chloride, ammonium bromide, quaternary ammonium chloride, quaternary ammonium bromide, ammonium hydrochloride, ammonium hydrobromide, sodium chloride, potassium chloride, sodium bromide, potassium bromide, sodium iodide or potassium iodide, such as a combination of ammonium chloride and ammonium bromide, a combination of ammonium bromide and quaternary ammonium chloride or a combination of sodium chloride and potassium bromide, and the like, but is not limited to the above-listed combinations, and other combinations not listed within the above-listed combinations are also applicable.
Preferably, the organic salt includes any one or a combination of at least two of nitrogen-based aromatic hydrochloride, nitrogen-based pseudo-aromatic hydrochloride, nitrogen-based aromatic hydrobromide, nitrogen-based pseudo-aromatic hydrobromide, phosphine chloride or phosphine bromide, such as a combination of nitrogen-based aromatic hydrochloride and nitrogen-based pseudo-aromatic hydrochloride, a combination of nitrogen-based pseudo-aromatic hydrochloride and nitrogen-based aromatic hydrobromide, or a combination of phosphine chloride and phosphine bromide, but not limited to the above-listed combinations, and other combinations not listed in the above combination range are also applicable.
Preferably, the first etching solution further includes a halogen simple substance.
Preferably, the first etching solution further includes an organic acid.
Preferably, the mass fraction of the halogen element is 0-0.5%, and 0 means that the first etching solution does not contain the halogen element, such as 0.1%, 0.2%, 0.3%, 0.4%, or 0.5%, but not limited to the above-listed values, and other values not listed in the above-mentioned value range are also applicable.
Preferably, the elementary halogen includes any one or a combination of at least two of chlorine, bromine or iodine, such as a combination of chlorine or bromine, a combination of chlorine or iodine, a combination of bromine or iodine, and the like, but is not limited to the above-listed combinations, and other combinations not listed in the above-mentioned combination range are also applicable.
Preferably, the mass fraction of the organic acid is 0-70%, and 0 means that the first etching solution does not contain the organic acid, such as 10%, 20%, 30%, 40%, 50%, 60%, or 70%, but not limited to the above-listed values, and other values not listed in the above-mentioned range of values are also applicable.
Preferably, the organic acid comprises a sulfonic acid comprising any one or a combination of at least two of methanesulfonic acid (MSA), ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, dodecylsulfonic acid, hydroxyphenylmethanesulfonic acid, benzylsulfonic acid, p-toluenesulfonic acid (pTSA), sulfamic acid, trifluoromethanesulfonic acid, trifluoroethanesulfonic acid, or perfluoroethanesulfonic acid, such as a combination of methanesulfonic acid and ethanesulfonic acid, a combination of methanesulfonic acid and p-toluenesulfonic acid, or a combination of dodecylsulfonic acid and trifluoromethanesulfonic acid, but not limited to the combinations listed above, and other combinations not listed within the above combinations are equally suitable.
Preferably, the mass fraction of the nitrate ion compound is 0.01-35%, such as 0.01%, 0.05%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, or 35%, but not limited to the above-listed values, and other values not listed within the above-mentioned range of values are also applicable.
Preferably, the nitrate ion compound includes any one or a combination of at least two of nitric acid, ammonium nitrate, sodium nitrate, potassium nitrate, quaternary ammonium nitrate, phosphine nitrate, nitrosyl chloride, or nitrosyl bromide, such as a combination of nitric acid and ammonium nitrate, a combination of nitric acid and sodium nitrate, or a combination of potassium nitrate and phosphine nitrate, but is not limited to the above-listed combinations, and other combinations not listed within the above-listed combinations are equally applicable.
Preferably, the organic acid mass fraction is 0-70%, 0 means that the second etching solution does not contain the organic acid, for example, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, or 70%, etc., but is not limited to the above-listed values, and other values not listed in the above-mentioned value range are also applicable.
Preferably, the organic acid comprises a sulfonic acid comprising any one or a combination of at least two of methanesulfonic acid (MSA), ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, dodecylsulfonic acid, hydroxyphenylmethanesulfonic acid, benzylsulfonic acid, p-toluenesulfonic acid (pTSA), sulfamic acid, trifluoromethanesulfonic acid, trifluoroethanesulfonic acid, or perfluoroethanesulfonic acid, such as a combination of methanesulfonic acid and ethanesulfonic acid, a combination of methanesulfonic acid and p-toluenesulfonic acid, or a combination of dodecylsulfonic acid and trifluoromethanesulfonic acid, but not limited to the combinations listed above, and other combinations not listed within the above combinations are equally suitable.
On the other hand, the invention also provides the application of the etching method of the gold-nickel film layer in advanced packaging and PCB manufacturing processes.
Compared with the prior art, the invention has the following beneficial effects:
the etching method of the gold-nickel film layer is obtained by etching with the first etching solution and the second etching solution which have specific compositions, the gold film layer and the nickel film layer can be etched from the substrate, and meanwhile, the etching speed is easy to control, the operation is convenient and fast, the method is safe, environment-friendly, low in cost, long in service life and free of damage to the substrate; the mixed solution of the first etching solution and the second etching solution is used for etching the gold-nickel film layer, so that a better etching effect is achieved; the halogen ion compound with a specific composition can remarkably reduce the use of the halogen ion compound in the first etching solution, remarkably reduce the pollution to the environment, improve the safety and maintain the etching effect of the first etching solution.
Drawings
FIG. 1 is a scanning electron micrograph of an etched test piece obtained in example 1;
FIG. 2 is a scanning electron micrograph of an etched test piece obtained in example 2;
FIG. 3 is a SEM photograph of an etched test piece obtained in example 3;
FIG. 4 is a SEM photograph of an etched test piece obtained in example 4;
FIG. 5 is a scanning electron micrograph of an etched test piece obtained in comparative example 1;
FIG. 6 is a scanning electron micrograph of an etched test piece obtained in comparative example 2.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Examples 1 to 6 and comparative examples 1 to 3 respectively provide an etching method of a gold-nickel film layer, and the first etching solution and the second etching solution used in each example comprise the following raw materials in parts by weight:
Figure BDA0002942350150000071
the preparation method of the first etching solution comprises the following steps: mixing all the raw materials of the first etching solution to obtain the first etching solution;
the preparation method of the second etching solution comprises the following steps: and mixing all the raw materials of the second etching solution to obtain the second etching solution.
Example 1
The embodiment provides an etching method of a gold-nickel film layer, which comprises the following specific steps:
and immersing the test piece containing the gold-nickel film layer into a first etching solution, immersing at 25 ℃ until the first gold film layer is completely etched, taking out the test piece, leaching and drying, immersing the test piece into a second etching solution, treating at 25 ℃ until the second nickel film layer is completely etched, taking out the test piece, leaching and drying to obtain the etched test piece.
Examples 2 to 3
Examples 2 to 3 each provide a method for etching a gold-nickel film layer, and the specific steps are the same as those in example 1.
Example 4
The embodiment provides an etching method of a gold-nickel film layer, which comprises the following specific steps:
mixing the first etching solution and the second etching solution according to the mass ratio of 1:1, then soaking the test piece containing the gold-nickel film layer into the mixed solution of the first etching solution and the second etching solution at 25 ℃ for a certain time till the gold-nickel film layer is completely etched, taking out the test piece, leaching and drying to obtain the etched test piece.
Examples 5 to 6, comparative examples 1 to 2
Examples 5-6 and comparative examples 1-2 each provide a method for etching a gold nickel film layer, the specific steps being the same as those of example 1.
Comparative example 3
The comparative example provides an etching method of a gold-nickel film layer, and the specific steps are consistent with those of example 4.
And (3) effect testing:
the residual gold nickel film on the surface of the test pieces after etching provided in examples 1 to 6 and comparative examples 1 to 3 was observed by scanning electron microscopy, and the results are shown in fig. 1 to 6 and the following table, wherein fig. 1 to 6 are the scanning electron micrographs of the test pieces after etching in example 1, example 2, example 3, example 4, comparative example 1 and comparative example 2, respectively:
group of Metal residue Substrate heterochromous
Example 1 ND △
Example 2 ND △
Example 3 ND ○
Example 4 ND ◎
Example 5 ND △
Example 6 ND △
Comparative example 1 ╳ △
Comparative example 2 ╳ ○
Comparative example 3 △ △
Where ND denotes no residue,. circa denotes no color difference of the substrate,. delta denotes very light color difference of the substrate,. delta denotes less metal residue or light color difference of the substrate,. gamma denotes severe metal residue.
As can be seen from the figures and the table above, the etching method provided by the invention has the advantages that the first etching solution and the second etching solution with specific compositions are utilized, the etching effect is good, no metal residue exists, and no damage is caused to the substrate; the etching effect can be further improved by adopting the mixed solution of the first etching solution and the second etching solution to etch, and the color difference of the substrate is reduced; meanwhile, the first etching solution obtained by adopting the preferable raw materials can reduce the substrate heterochrosis of the test piece obtained by the etching method.
The applicant states that the present invention is described by the above embodiments and the application of the method for etching gold-nickel film layer of the present invention, but the present invention is not limited to the above embodiments, i.e. it does not mean that the present invention must be implemented by the above embodiments. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.

Claims (10)

1. An etching method of a gold-nickel film layer is characterized by comprising the following steps: etching the gold-nickel film layer by using a mixed solution of a first etching solution and a second etching solution;
or etching the gold film layer by using a first etching solution, and then etching the nickel film layer by using a second etching solution;
the first etching solution includes a halogen ion compound and water;
the second etching solution includes water, a nitrate ion compound, and/or an organic acid.
2. The method for etching the gold-nickel film layer according to claim 1, wherein the mass fraction of the halogen ion compound is 0.01 to 1.5%;
preferably, the halide ion compound comprises any one of an inorganic acid, an inorganic salt or an organic salt or a combination of at least two thereof;
preferably, the inorganic acid comprises any one or a combination of at least two of hydrochloric acid, hydrobromic acid or hydroiodic acid, preferably hydrochloric acid;
preferably, the inorganic salt comprises any one of ammonium chloride, ammonium bromide, quaternary ammonium chloride, quaternary ammonium bromide, ammonium hydrochloride, ammonium hydrobromide, sodium chloride, potassium chloride, sodium bromide, potassium bromide, sodium iodide or potassium iodide or a combination of at least two thereof;
preferably, the organic salt comprises any one of nitrogen-based aromatic hydrochloride, nitrogen-based pseudo-aromatic hydrochloride, nitrogen-based aromatic hydrobromide, nitrogen-based pseudo-aromatic hydrobromide, phosphine chloride or phosphine bromide or a combination of at least two of the nitrogen-based aromatic hydrochloride, the nitrogen-based pseudo-aromatic hydrobromide, the phosphine chloride or the phosphine bromide.
3. The method for etching the gold-nickel film layer according to claim 1 or 2, wherein the first etching solution further comprises a halogen element.
4. The method for etching the gold-nickel film layer according to any one of claims 1 to 3, wherein the first etching solution further comprises an organic acid.
5. The method for etching the gold-nickel film layer according to claim 3, wherein the mass fraction of the halogen element is 0-0.5%, and 0 indicates that the first etching solution does not contain the halogen element;
preferably, the elementary halogen comprises any one of chlorine, bromine or iodine or a combination of at least two of the chlorine, the bromine and the iodine.
6. The method for etching the gold-nickel film according to claim 4, wherein the organic acid is 0-70% by mass, and 0 indicates that the first etching solution does not contain the organic acid;
preferably, the organic acid comprises a sulfonic acid comprising any one or a combination of at least two of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, dodecylsulfonic acid, hydroxyphenylmethanesulfonic acid, benzylsulfonic acid, p-toluenesulfonic acid, sulfamic acid, trifluoromethanesulfonic acid, trifluoroethanesulfonic acid, or perfluoroethanesulfonic acid.
7. The method for etching a gold-nickel film according to claim 1, wherein the mass fraction of the nitrate ion compound is 0.01 to 35%.
8. The method for etching a gold-nickel film layer according to claim 1 or 7, wherein the nitrate ion compound includes any one or a combination of at least two of nitric acid, ammonium nitrate, sodium nitrate, potassium nitrate, quaternary ammonium nitrate, phosphine nitrate, nitrosyl chloride, and nitrosyl bromide.
9. The method for etching the gold-nickel film layer according to any one of claims 1, 7 and 8, wherein the organic acid has a mass fraction of 0-70%, and 0 indicates that the second etching solution does not contain the organic acid;
preferably, the organic acid comprises a sulfonic acid comprising any one or a combination of at least two of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, dodecylsulfonic acid, hydroxyphenylmethanesulfonic acid, benzylsulfonic acid, p-toluenesulfonic acid, sulfamic acid, trifluoromethanesulfonic acid, trifluoroethanesulfonic acid, or perfluoroethanesulfonic acid.
10. Use of the etching method of gold-nickel film layer according to any one of claims 1-9 in advanced packaging, PCB manufacturing process.
CN202110184230.8A 2021-02-08 2021-02-08 Etching method of gold-nickel film and application thereof Pending CN112928020A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115717243A (en) * 2022-11-23 2023-02-28 苏州鑫属源环保科技有限公司 Regeneration method of waste liquid generated in hanging and removing nickel from hardware nitre and application of regeneration method
CN116445914A (en) * 2023-02-28 2023-07-18 北京交通大学 Nickel-iron alloy mask etching solution, preparation method and preparation method of nickel-iron alloy mask

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