CN112903176A - Array type pressure measuring device based on packaging substrate - Google Patents
Array type pressure measuring device based on packaging substrate Download PDFInfo
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- CN112903176A CN112903176A CN202110342504.1A CN202110342504A CN112903176A CN 112903176 A CN112903176 A CN 112903176A CN 202110342504 A CN202110342504 A CN 202110342504A CN 112903176 A CN112903176 A CN 112903176A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
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Abstract
本发明涉及微电子封装领域，尤其涉及一种基于封装基板的阵列式压力测量装置，包括合金壳体，以及位于合金壳体内的：压阻敏感芯片，用于在其的正面施加参考压，在背面施加外界气体压力，产生压力差；封装基板，具有导气孔，集成有所述压阻敏感芯片，该封装基板用于提供气压并对所述压阻敏感芯片的两面作用，以产生所述压力差；电路板，与所述封装基板堆叠平行放置，二者通过电互连与固定结构堆叠，该电路板用于将所述产生压力差转化为正比于压力变化的电信号输出并处理计算；合金基板，用于将压阻敏感芯片、基板和电路板密封在合金壳体内。本发明，可降低装配应力，内部集成气路系统有利于整个压力测量装置装配体的小型化。
The invention relates to the field of microelectronic packaging, in particular to an array pressure measurement device based on a packaging substrate, comprising an alloy casing, and a piezoresistive sensitive chip located in the alloy casing, for applying a reference pressure on the front side thereof, and The outside air pressure is applied on the back side to generate a pressure difference; the packaging substrate has an air guide hole and is integrated with the piezoresistive sensitive chip, and the packaging substrate is used to provide air pressure and act on both sides of the piezoresistive sensitive chip to generate the pressure The circuit board is placed in parallel with the package substrate stack, and the two are stacked with the fixed structure through electrical interconnection, and the circuit board is used to convert the generated pressure difference into an electrical signal output proportional to the pressure change and process and calculate; Alloy substrate for sealing piezoresistive sensitive chips, substrates and circuit boards in alloy housings. The present invention can reduce assembly stress, and the internal integrated gas circuit system is beneficial to the miniaturization of the entire pressure measuring device assembly.
Description
Technical Field
The invention relates to the field of microelectronic packaging, in particular to an array type pressure measuring device based on a packaging substrate.
Background
The array type multi-channel pressure measuring device is widely applied to wind tunnel tests or flight tests, and can realize multi-channel rapid pressure measurement, wherein the MEMS piezoresistive sensitive chip is a core device of the pressure measuring device and has decisive influence on the overall performance of the pressure measuring device. The improvement of the comprehensive performance of the conventional array type multichannel pressure measuring device faces some core problems to be solved and optimized. Firstly, the integration and assembly of a multichannel pressure test circuit system are complex, the interconnection distance between a core chip and an MEMS piezoresistive sensitive chip and between the core chip and a subsequent processing circuit is long, and the integration level is low. Secondly, stress strain is introduced in the assembly process of the MEMS piezoresistive sensitive chip device, thermal stress caused by difference of thermal expansion coefficients of the MEMS piezoresistive sensitive chip device and other parts of the MEMS piezoresistive sensitive chip device and performance drift caused by factors such as uneven temperature distribution fields are difficult to predict, and long-term stability and comprehensive precision of products are restricted. Finally, in the current technical solution, the temperature of the working state of the piezoresistive sensitive chip is generally obtained by a temperature sensor assembled on the circuit board or a temperature sensor integrated on the surface of the MEMS piezoresistive sensitive chip, and since the MEMS piezoresistive sensitive chip is in a material system with various thermodynamic characteristics and self-heating exists in the working state, the temperature state of the piezoresistive sensitive strip is affected by difficulty in test characterization, and the temperature sensor assembled on the circuit board cannot accurately characterize the temperature state of the piezoresistive sensitive chip pressure sensitive strip in the working state, so that the temperature compensation precision is limited.
Disclosure of Invention
The present invention is directed to an array pressure measuring device based on a package substrate, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
the measuring device comprises an alloy shell and is positioned in the alloy shell: the piezoresistive sensitive chip is used for applying reference pressure on the front surface of the piezoresistive sensitive chip and applying external gas pressure on the back surface of the piezoresistive sensitive chip to generate pressure difference; the packaging substrate is provided with an air guide hole and is integrated with the piezoresistive sensitive chip, and the packaging substrate is used for providing air pressure and acting on two sides of the piezoresistive sensitive chip to generate the pressure difference; the circuit board is arranged in parallel with the packaging substrate stack, the circuit board and the packaging substrate stack through an electric interconnection and a fixed structure, and the circuit board is used for converting the generated pressure difference into an electric signal which is in direct proportion to pressure change, outputting the electric signal and processing and calculating the electric signal; an instrument amplifying circuit, an ADC module and an MCU are integrated on the circuit board, and signals generated by the pressure difference enter the ADC module after being amplified by the instrument amplifying circuit and then enter an MCU processing unit for processing and calculation; the alloy substrate is used for sealing the piezoresistive sensitive chip, the packaging substrate and the circuit board in the alloy shell and is provided with air guide holes penetrating through the front surface and the back surface and a reference pressure air path for setting reference pressure.
Furthermore, a piezoresistive strip, a passivation layer and a Pad are formed on the front surface of the piezoresistive sensitive chip, and an open cavity is formed on the back surface of the piezoresistive sensitive chip; the Pad at least comprises 1 power supply Pad, 1 grounding Pad and 2 signal pads.
Furthermore, the piezoresistive sensitive chip also comprises an insulating piezoresistive sensitive chip.
Furthermore, the piezoresistive sensitive chip is flip-chip bonded on the substrate.
Furthermore, the front surface of the piezoresistive sensitive chip is welded on an interconnection substrate with at least one wiring layer on the surface; the instrument amplifying circuit, the ADC and the MCU are integrated on the interconnection substrate; the interconnection substrate and the circuit board are stacked in parallel, and the interconnection substrate and the circuit board are stacked through an electrical interconnection and fixing structure to realize electrical and fixing.
Further, the electrical interconnect and mounting structure may employ solder balls or posts.
Further, the electrical interconnection and fixing structure adopts a combination of Pad and TSV.
Further, the front surface of the circuit board is connected to the side wall step structure of the alloy shell by using sealing glue or threads; the alloy substrate is in sealing adhesive or threaded connection with the alloy shell; and the outer sides of the alloy substrates are respectively provided with a stainless steel pipe air port corresponding to the air guide hole, and a hose is sleeved outside the stainless steel pipe, so that the alloy substrates can be conveniently connected with an external element to be tested or an operating device.
Compared with the prior art, the invention has the beneficial effects that:
(1) the MEMS piezoresistive sensitive chips, the amplifying circuit, the ADC and the like are directly integrated with the TSV/TGV substrate in a bare chip mode, interconnection paths between the MEMS piezoresistive sensitive chips and the subsequent amplifying circuit, the ADC and the like are short, the integration level is high, and the size is small.
(2) The difference of thermodynamic parameters of a material system integrated by MEMS piezoresistive sensitive chips, amplifying circuits, bare chips such as ADC and the like and TSV/TGV substrates is small, and the assembly stress and the thermal stress can be controlled.
(3) The temperature compensation adopts the temperature of the piezoresistive sensitive strip in the extraction working state of the MEMS piezoresistive sensitive chip which is not sensitive to measuring gas and is the same as that used for pressure measurement, so that the temperature compensation precision can be improved.
(4) The alloy shell is used for placing the array type piezoresistive sensitive chip and the circuit system, and the internal integrated gas circuit system is favorable for the miniaturization of the whole pressure measuring device assembly body.
Drawings
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention.
FIG. 2 is a schematic diagram of a differential pressure type piezoresistive sensitive chip according to the present invention.
FIG. 3 is a schematic diagram of an absolute pressure type piezoresistive sensing chip according to the present invention.
FIG. 4 is a schematic diagram of the piezoresistive strip temperature measurement of the piezoresistive sensitive chip of the present invention.
Fig. 5 is a schematic structural diagram of embodiment 2 of the present invention.
Fig. 6 is a schematic perspective electrical interconnect diagram of the present invention.
Fig. 7 is a schematic structural diagram of embodiment 3 of the present invention.
Fig. 8 is a schematic structural diagram of embodiment 4 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper/lower end", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be configured in a specific orientation, and operate, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed/sleeved," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
The design and integrated assembly method of the array type pressure measurement device based on the package substrate is shown in fig. 1, and the pressure measurement device mainly comprises a piezoresistive sensitive chip 000, a package substrate 100, a circuit board 200, an electrical interconnection and fixing structure 300, a sealing gasket 400 and an alloy housing 500.
In one embodiment of the present invention, the package substrate 100 is a silicon substrate or a glass substrate, and further a TSV/TGV substrate.
Referring to fig. 2 and 3, the piezoresistive sensitive chip 000 may be divided into a differential pressure type piezoresistive sensitive chip 000a and an absolute pressure type piezoresistive sensitive chip 000 b. The piezoresistive sensitive chip 000 is a silicon substrate, and a piezoresistive strip 001, a passivation layer 002 and Pad 003 are formed on the front surface of the piezoresistive sensitive chip 000 through the processes of epitaxy, oxidation, diffusion, sputtering and the like; forming an open cavity 004 on the back of the piezoresistive sensitive chip 000 by adopting an etching process; the absolute pressure type piezoresistive sensitive chip 000b is formed by vacuumizing the back open cavity 004 on the basis of the differential pressure type piezoresistive sensitive chip 000a, and then bonding another silicon wafer 010 to the back of the piezoresistive sensitive chip 000a to seal the open cavity 004. Wherein Pad 003 includes at least 1 power Pad, 1 ground Pad, 2 signal pads.
Applying a reference pressure P1 on the front side of the piezoresistive sensitive chip 000a, and applying a sensitive pressure P2 to the back open cavity 004 of the piezoresistive sensitive chip 000 through the air vents 101, 401 and 511; after the back cavity of the piezoresistive sensitive chip 000b is vacuumized, the external air pressure P1 is applied to the front resistance film of the piezoresistive sensitive chip 000 through the air guide channel; the pressure difference between the two ends of the piezoresistive sensitive chip 000 is converted into an electric signal proportional to the pressure change through a circuit, and the electric signal is output, processed and calculated.
Integrating a piezoresistive sensitive chip 000 on a packaging substrate 100 in a routing or mounting manner, and integrating an instrument amplifying circuit 201, an ADC 202, an MCU203 and the like on a circuit board 200 in a routing or mounting manner; the packaging substrate 100 and the circuit board 200 are stacked in parallel, and are stacked through an electrical interconnection and fixing structure 301 to realize electrical and fixing, the height of the packaging substrate 100 and the circuit board is the height of the piezoresistive sensitive chip 000 and routing or mounting, and the electrical interconnection and fixing structure 301 can adopt a solder ball or a column; signals generated by the piezoresistive sensitive chip 000 due to pressure difference are amplified by the instrument amplifying circuit 201, enter the ADC 202 module, then enter the MCU203 processing unit, and finally enter the visual interface for processing and calculation.
In this embodiment, the piezoresistive sensitive chips 000 integrated with the 4 × 8 array on the package substrate 100 can further expand the number of the piezoresistive sensitive chips 000 according to the requirement, and increase more channels; the preferred package substrate 100 is further provided with at least 1 piezoresistive sensitive chip 000c for accurately extracting the temperature of the piezoresistive sensitive chip piezoresistive strip in real time. Referring to fig. 4, the piezoresistive sensitive chip 000c is integrated on the package substrate 100, the package substrate 100 is provided with a gas channel, one end of the gas channel is communicated to the back cavity 004 of the piezoresistive sensitive chip 000c, and the other end of the gas channel is communicated to the cavity where the piezoresistive sensitive chip 000c works, i.e., the surface cavity of the package substrate 100, and the pressure difference between two sides of the membrane surface of the piezoresistive sensitive chip is set to be zero, so that the piezoresistive sensitive chip 000c always keeps a zero output state; the piezoresistive sensitive chip 000c is consistent with the working voltage conditions of other piezoresistive sensitive chips 000, and the temperature of the piezoresistive sensitive chip 000 piezoresistive strips is obtained by measuring the change of the piezoresistive strips.
The packaging substrate 100 with the air guide holes, the sealing gasket 400 and the alloy substrate 510 are connected in sequence in a sealing manner; wherein the package substrate 100 is provided with air guide holes 101 penetrating the front and back surfaces; the gasket 400 has air vents 401 penetrating the front and back sides; the alloy substrate 510 is provided with an air guide hole 511 penetrating through the front surface and the back surface and a reference pressure air path 512 for setting reference pressure; and a sealing ring 521 is arranged between the alloy substrates to ensure the tightness of the air path system.
During pressure measurement, the reference pressure P1 is the external air entering from the reference pressure air path 512 of the alloy substrate 510 onto the piezoresistive sensitive chip 000 attached to the surface of the package substrate 100; the sensitive pressure P2 is that the outside air enters from the air vents 511 of the alloy substrate 510, passes through the air vents 401 of the sealing pad 400, enters the air vents 101 of the package substrate 100, and finally enters the back cavity 004 of the piezoresistive sensitive chips 000 attached to the surface of the package substrate 100, and each piezoresistive sensitive chip 000 can be measured independently.
The circuit board 200 is provided with a cavity corresponding to the alloy shell 520 and used for accommodating the instrument amplification circuit 201, the ADC 202, the MCU203 and the like; wherein the front side of the circuit board 200 is attached to the side wall step structure 522 of the alloy housing 520 using a hermetic adhesive or a screw thread.
The bonding mode of the alloy substrate 510 and the alloy shell 520 can be in the form of sealing glue or threads, and the like, so that the piezoresistive sensitive chip or circuit chip can be conveniently disassembled and assembled subsequently and maintained; the outer sides of the alloy substrates 510 are respectively provided with a stainless steel pipe air port 513 corresponding to the air guiding air hole, and a hose 514 can be sleeved outside the stainless steel pipe 513, so as to be conveniently connected with an external element to be tested or an operating device.
Example 2
Referring to fig. 5 and fig. 6, the difference between this embodiment and embodiment 1 is that the piezoresistive sensitive chip 000 is flip-chip bonded on the package substrate 100, a gap between the piezoresistive sensitive chip 000 and the package substrate 100 is sealed by a sealing ring 005, and the sealing ring 005 can be silicon rubber or silicon sealant; the packaging substrate 100 and the circuit board 200 are stacked in parallel, and are stacked through an electrical interconnection and fixing structure 302 to realize electrical and fixing, the height of the electrical interconnection and fixing structure 302 is the height of the piezoresistive sensitive chip and the flip chip, and the electrical interconnection and fixing structure 302 can adopt a combination of Pad 303 and TSV 304; the rest refer to example 1.
Example 3
Referring to fig. 7, the pressure measurement device mainly includes a piezoresistive sensitive chip 000, a package substrate 100, a circuit board 200, an electrical and fixing structure 300, a sealing gasket 400, an alloy case 500, and an interconnection substrate 600.
The difference between this embodiment and embodiment 1 is that the piezoresistive sensitive chip 000 is front-side bonded on the interconnect substrate 600 with at least one wiring layer on the surface; optionally, the bare-chip instrument amplifier circuit 601, the ADC602, the MCU 603, etc. are integrated on the interconnection substrate 600 in a wire bonding or mounting manner; optionally, the packaged instrument amplification circuit 601, ADC602, MCU 603, etc. are integrated on the circuit board 200 in a wire bonding or surface mounting manner; the interconnection substrate 600 and the circuit board 200 are stacked and parallel, and are stacked through the electrical interconnection and fixing structure 301 to realize electrical and fixing, the height of the interconnection and fixing structure 301 is the height of the instrument amplifying circuit 601, the ADC602, the MCU 603 and the like and wire bonding or surface mounting, and the electrical interconnection and fixing structure 301 can adopt a solder ball or a column; the gap between the piezoresistive sensitive chip 000 and the packaging substrate 100 is sealed by a sealing ring 005, and the sealing ring 005 can adopt silicon rubber or silicon sealant; signals generated by the piezoresistive sensitive chip 000 due to pressure difference are amplified by the instrument amplifying circuit 601, enter the ADC602 module, then enter the MCU 603 processing unit, and finally enter the visual interface for processing and calculation.
Example 4
Referring to fig. 8, the difference between the present embodiment and embodiment 3 is that the interconnection substrate 600 and the circuit board 200 are stacked in parallel, and they are stacked by the electrical interconnection and fixing structure 302 to achieve electrical and fixing, and the height of the interconnection and fixing structure 302 is the height of the piezoresistive sensitive chip 000, the package substrate 100 and the gasket 400, and the electrical interconnection and fixing structure 302 can adopt a combination of Pad 303 and TSV 304; the packaging substrate 100 with the air guide holes, the sealing gasket 400, the circuit board 200 and the alloy substrate 510 are hermetically connected in sequence; wherein the package substrate 100 is provided with air guide holes 101 penetrating the front and back surfaces; the gasket 400 has air vents 401 penetrating the front and back sides; the circuit board 200 is provided with air vents 205 penetrating the front and back sides; the alloy substrate 510 is provided with an air guide hole 511 penetrating through the front surface and the back surface and a reference pressure air path 512 for setting reference pressure; the interconnect substrate 600 front side is glued to the alloy housing 520 sidewall step 522 using a seal glue; the rest refer to example 3.
During pressure measurement, the reference pressure is that outside air enters the upper surface of the piezoresistive sensitive chip 000 attached to the surface of the packaging substrate 100 from the reference pressure air path 512 of the alloy substrate 510; the sensitive pressure is that the external air enters from the plurality of air guide holes 511 of the alloy substrate 510, passes through the air guide holes 205 of the circuit board 200, passes through the air guide holes 401 of the sealing pad 400, enters the air guide holes 101 of the packaging substrate 100, and finally enters the back cavity 004 of the piezoresistive sensitive chips 000 attached to the surface of the packaging substrate 100, and each piezoresistive sensitive chip 000 can be independently measured.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
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| CN202110342504.1A CN112903176A (en) | 2021-03-30 | 2021-03-30 | Array type pressure measuring device based on packaging substrate |
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| CN202110342504.1A CN112903176A (en) | 2021-03-30 | 2021-03-30 | Array type pressure measuring device based on packaging substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115767948A (en) * | 2022-11-14 | 2023-03-07 | 北京自动化控制设备研究所 | High-density low-stress integration method for MEMS (micro-electromechanical systems) inertial system |
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