CN112859230B - Terahertz super-structure focusing lens for realizing one-way spin circular polarization state conversion - Google Patents
Terahertz super-structure focusing lens for realizing one-way spin circular polarization state conversion Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000005388 cross polarization Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 2
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Abstract
The invention discloses a terahertz super-structure focusing lens for realizing conversion of unidirectional spinning circular polarization states, which arranges silicon strips with polarization conversion functions according to a set phase distribution rule to form a super surface of the super-structure lens, only uses a full-silicon terahertz super-structure focusing lens with dynamic phase conversion, realizes all phases of 0-2 pi only by changing structural parameters of a basic super-surface unit, avoids the inherent defects of Pancharatnam-Berry phases, successfully realizes clean and thorough conversion and focusing from any linear polarization state to any unidirectional spinning circular polarization state in a terahertz waveband, and only needs to integrally rotate the lens by +/-90 degrees when switching the circular polarization states in different spinning directions without additional design, thereby having simple operation and practicability. The invention thoroughly solves the problem that the conventional super-structure focusing lens for realizing unidirectional spin circular polarized wave conversion in the THz wave band does not exist, and the achievement of the invention is expected to be applied to an advanced THz camera.
Description
Technical Field
The invention relates to the technical field of novel artificial electromagnetic materials and terahertz science, in particular to a terahertz metamaterial focusing lens for realizing unidirectional spinning circular polarization state conversion.
Background
Many linearly polarized light is harmful in photography. They introduce reflected light into the camera to reduce the sharpness and contrast of the photograph. In advanced cameras with auto-focus and auto-exposure functions, a Circular Polarized Lens (CPL) is mainly used to filter out these harmful linearly polarized light. CPL can directly convert incident linearly polarized light into circularly polarized light. In theory, CPL can be used in any camera, including advanced terahertz (THz) cameras. However, the conventional CPL is still prepared by manual polishing, so that the CPL has low yield, high price, large volume and difficult integration.
In recent years, researchers are dedicated to developing a novel polarization conversion device with low cost, small volume, high integration level and multiple functions. Artificial metamaterials/metamaterials provide a good solution for this new device. A super-surface based THz circular polarization conversion device has been developed. In order to fully exploit the advantages of the metasurface, researchers further desire to integrate polarization conversion functionality into the superstructured focusing lens. If the THz super-structure focusing lens can realize circular polarization conversion at the same time, the traditional CPL lens and the focusing lens can be replaced at the same time, and the THz super-structure focusing lens is applied to an advanced THz camera to further reduce the volume of the camera. At present, the document discloses a THz metamaterial lens which converts a linearly polarized wave into a circularly polarized wave and focuses the circularly polarized wave, however, the circularly polarized wave contains a left-handed component and a right-handed component, and the conversion is incomplete and unclean, and the THz metamaterial lens is not practically usable. For this reason, the existing THz super-structure focusing lens always depends on Pancharatnam-Berry phase during design, that is, in order to make the basic super-surface unit completely cover 0-2 pi phase, the existing basic unit must be rotated, which has some inherent defects such as spin dependence in physical principle, and thus, a terahertz super-structure focusing lens capable of converting linearly polarized waves into circularly polarized waves with a single spin direction has not been realized so far.
Disclosure of Invention
In order to solve the problems, the invention provides a terahertz metamaterial focusing lens for realizing unidirectional spin circular polarization state conversion, which is realized by the following technical scheme:
the utility model provides a realize terahertz of one-way spin circular polarization state conversion and surpass structure focusing lens, the super surface of super structure focusing lens comprises a plurality of silicon rectangular of arranging according to the phase distribution rule of setting for, a plurality of silicon rectangular carry out the codolarization and cross polarization to incident polarization terahertz wave, and its transmission codolarization component and cross codolarization component mutually perpendicular, every silicon rectangular polarization conversion function all satisfies following expression:
wherein T is the polarization conversion function, T is the transmission coefficient of the silicon strip to the terahertz wave,
is the phase corresponding to each silicon stripe, and i is an imaginary unit.
The set phase distribution rule is as follows:
wherein, therein
Is the phase, lambda is the terahertz wavelength, x, y are the coordinates of any point on the said super-structure focusing lens with the right center as the origin, f is the focal length of the super-structure lens.
Further, the plurality of silicon strips comprise a plurality of rectangular silicon strips with different length-width ratios, and no silicon strip with the same shape and size exists in any group of the plurality of silicon strips covering the phase of 0-2 pi.
Further, the unit periods and the etching heights of the plurality of silicon strips are the same.
The technical scheme has the advantages that the super-structure lens only depends on a dynamic phase in a physical principle, and a traditional Pancharatnam-Berry phase is not used for constructing the THz super-structure focusing lens, so that inherent defects caused by the super-structure lens are avoided, clean and thorough conversion and focusing from any linear polarization state to a certain one-way spinning circular polarization state are realized, and according to the design, the super-structure lens can realize the exchange of the spinning direction of the circular polarization state only by being rotated +/-90 degrees integrally.
Furthermore, the plurality of silicon strips and the coordinate axis of the rectangular coordinate system taking the positive center of the super-structure focusing lens as the origin point form an included angle of 45 degrees.
The further scheme has the advantages that each silicon strip can realize the co-polarization and the cross-polarization of incident linear polarization THz waves, the transmission co-polarization components and the cross-polarization components are perpendicular to each other, the amplitudes are equal, and a fixed phase difference of pi/2 exists.
Further, the silicon strips are all high-resistance silicon.
Further, the transmission common polarization components and the cross polarization components of the plurality of silicon strips are perpendicular to each other and have a fixed phase difference of pi/2.
Further, the amplitudes of the transmission co-polarization components and the cross-polarization components of the plurality of silicon stripes are the same.
The further solution has the advantage that one of the transmission co-polarization component and the cross-planning component of the basic structure of the plurality of silicon strips can achieve a phase coverage of 0-2 pi.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic diagram of a terahertz metamaterial focusing lens for realizing unidirectional spin circular polarization state conversion.
Fig. 2a is a schematic diagram of five basic silicon stripe structures according to an embodiment of the present invention, fig. 2b is a phase of an X-co-polarization component corresponding to the five basic structures, fig. 2c is a transmission amplitude of the X-co-polarization component and a Y-cross-polarization component, and fig. 2d is a phase difference between the X-co-polarization component and the Y-cross-polarization component.
Fig. 3 is a focusing characteristic when the X-ray polarized THz wave is incident in the embodiment, in which a is a focusing characteristic of the original lens, and b is a focusing characteristic when the lens is rotated ± 90 °.
Detailed Description
Hereinafter, the term "comprising" or "may include" used in various embodiments of the present invention indicates the presence of the invented function, operation or element, and does not limit the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the present invention, the terms "comprises," "comprising," "includes," "including," "has," "having" and their derivatives are intended to mean that the specified features, numbers, steps, operations, elements, components, or combinations of the foregoing, are only meant to indicate that a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as first excluding the existence of, or adding to the possibility of, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
The terminology used in the various embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the invention. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. The terms (such as terms defined in a commonly used dictionary) will be construed to have the same meaning as the contextual meaning in the related art and will not be construed to have an idealized or overly formal meaning unless expressly so defined in various embodiments of the present invention.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and the accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not used as limiting the present invention.
Example 1
The utility model provides a realize terahertz of one-way spin circular polarization state conversion and surpass structure focusing lens, as shown in fig. 1, the super surface of super structure focusing lens comprises a plurality of silicon strips according to setting for the phase distribution rule and arranging, a plurality of silicon strips carry out the copolarization and cross polarization to incident polarization terahertz wave, and its transmission copolarization component and cross copolarization component mutually perpendicular, the polarization conversion function of every silicon strip all satisfies following expression:
wherein T is the polarization conversion function, T is the transmission coefficient of the silicon strip to the terahertz wave,
is the phase corresponding to each silicon stripe, and i is an imaginary unit.
In the scheme, each silicon strip can realize the co-polarization and cross-polarization of incident linear polarization THz waves, the transmission co-polarization component and the cross-polarization component are perpendicular to each other, the amplitudes are equal, and a fixed phase difference of pi/2 exists. One of the transmitted co-polarized and cross-polarized components of each silicon strip enables a phase coverage of 0-2 pi.
In this embodiment, the content of this scheme is described by taking 5 basic silicon stripe structures as examples, and the parameters of five silicon stripes are: l is 1 ＝77μm，W 1 ＝59μm；L 2 ＝67μm，W 2 ＝53μm；L 3 ＝70μm，W 3 ＝36μm；L 4 ＝148μm，W 4 ＝32μm；L 5 ＝90μm，W 5 =60 μm, as shown in fig. 2, five basic silicon strip structures are designed, as shown in fig. 2 (a), with the silicon strips at 45 ° angles to the X or Y axis, each structure being capable of causing transmitted X-direction co-polarization and Y-direction cross-polarization of an incident X-linearly polarized THz wave. As in fig. 2 (b), each structure produces a phase whose X-co-polarized component enables a phase coverage of 0-2 pi. As shown in FIG. 2 (c), the X-co-polarization component of all structures isThe Y cross-polarized components are substantially equal in magnitude, here about 0.5. As shown in FIG. 2 (d), the X co-polarized component and the Y cross-polarized component of all the structures have a fixed phase difference of π/2. In the scheme, in a group of strips covering 0-2 pi phases, the condition that the length and the width of any two silicon strips are the same does not exist.
The basic silicon strips are arranged according to a set phase distribution rule to form the super-structured focusing lens of the embodiment, and the phase distribution rule to be followed is as follows:
in this embodiment, λ is a wavelength corresponding to 0.96THz, (x, y) is coordinates of any point on the super-structured lens, where the right center of the super-structured lens is set as the origin of coordinates, f =8mm is the focal length of the super-structured lens, and the lens diameter is 8mm. The resulting lens can convert incident X-ray polarized THz waves into a transmitted left-handed circular polarization state and focus on the focal plane, as in fig. 3 (a). If the lens is rotated by 90 ° as a whole, a right-handed circular polarization state transition and focusing can be obtained, as shown in fig. 3 (b).
In conclusion, the metamaterial lens provided by the invention only depends on a dynamic phase in a physical principle, the inherent defect of a Pancharatnam-Berry phase is avoided, and clean and thorough conversion and focusing from any linear polarization state to any one-way spin circular polarization state are successfully realized in a terahertz wave band. When the circular polarization state of different spin directions is switched, the lens is rotated by +/-90 degrees integrally, no additional design is needed, and the operation is simple and practical. The invention thoroughly solves the problem that the conventional metamaterial focusing lens for realizing unidirectional spin circular polarization wave conversion in the THz wave band is not available, and the achievement of the invention is expected to be applied to an advanced THz camera.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. The utility model provides a realize terahertz of one-way spin circular polarization state conversion and surpass structure focusing lens which characterized in that, the super surface of super structure focusing lens comprises a plurality of silicon strips according to the phase distribution rule range of setting for, a plurality of silicon strips realize carrying out the copolarization and cross polarization to incident polarization terahertz wave, satisfy its transmission copolarization component and cross copolarization component mutually perpendicular and the phase difference is fixed, the polarization conversion function of every silicon strip all describes and is:
wherein T is the polarization conversion function, T is the transmission coefficient of the silicon strip to the terahertz wave,
is the phase corresponding to each silicon stripe, i is the imaginary unit;
the set phase distribution rule is as follows:
wherein, wherein
The phase is determined, lambda is the terahertz wavelength, x and y are the coordinates of any point on a rectangular coordinate system with the right center as the origin on the super-structure focusing lens, and f is the focal length of the super-structure lens.
2. The terahertz metamaterial focusing lens for realizing one-way spin circular polarization state conversion as claimed in claim 1, wherein the plurality of silicon strips comprises a plurality of rectangular silicon strips with different length-width ratios, and no silicon strip with the same shape and size exists in any group of the plurality of silicon strips covering 0-2 pi phase.
3. The terahertz metamaterial focusing lens for realizing one-way spin circular polarization state conversion according to claim 2, wherein the unit periods and the etching heights of the plurality of silicon strips are the same.
4. The terahertz metamaterial focusing lens capable of realizing one-way spin circular polarization state conversion according to claim 3, wherein the plurality of silicon strips form an angle of 45 degrees with the coordinate axis of a rectangular coordinate system with the center of the metamaterial focusing lens as the origin.
5. The terahertz metamaterial focusing lens capable of realizing unidirectional spin circular polarization state conversion according to claim 4, wherein the plurality of silicon strips are all high-resistance silicon.
6. The terahertz metamaterial focusing lens for realizing the conversion of unidirectional spin circular polarization states of claim 5, wherein the transmission co-polarization components and the cross-polarization components of the plurality of silicon strips are perpendicular to each other and have a fixed phase difference of pi/2.
7. The terahertz metamaterial focusing lens for realizing conversion of unidirectional spin circular polarization states as claimed in claim 6, wherein the transmissive co-polarized components and the cross-polarized components of the plurality of silicon strips have the same amplitude.
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| CN114397725A (en) * | 2022-01-13 | 2022-04-26 | 天津大学 | A terahertz metalens that directly converts unpolarized waves into circularly polarized waves |
| CN114690435A (en) * | 2022-04-29 | 2022-07-01 | 南方科技大学 | Vector beam generation method based on spin decoupling super-surface zone plate |
| CN115047547B (en) * | 2022-05-26 | 2023-07-11 | 成都信息工程大学 | Construction method of dual-frequency terahertz space wave control device |
| CN115201945A (en) * | 2022-07-13 | 2022-10-18 | 云南师范大学 | Terahertz lens based on pseudo surface plasmon |
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