CN112820671B - Transfer device, transfer system and method - Google Patents
Transfer device, transfer system and method Download PDFInfo
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- CN112820671B CN112820671B CN202110178478.3A CN202110178478A CN112820671B CN 112820671 B CN112820671 B CN 112820671B CN 202110178478 A CN202110178478 A CN 202110178478A CN 112820671 B CN112820671 B CN 112820671B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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Abstract
本发明实施例公开了一种转移装置、转移系统和方法，包括转移基板、激发部和柔性膜，激发部位于转移基板和柔性膜之间，激发部用于在激发源的激发下产生气体，以产生至少在转移基板厚度方向上的推力，使得柔性膜在受到推力的位置发生形变，使得待转移芯片阵列中的待转移芯片与柔性膜的接触面积减小，最终使得待转移芯片阵列与转移装置分离，实现对待转移芯片的大批量转移。柔性膜的设置，可以起到缓冲和均匀应力的作用，使得待转移芯片阵列中的至少部分待转移芯片可以在均匀应力的作用下，分离至目标基板的需要对准的位置，提高了转移精度。柔性膜的设置，还可以避免激发部受激发产生的气体对待转移芯片的腐蚀等损害。
The embodiment of the present invention discloses a transfer device, a transfer system and a method, including a transfer substrate, an excitation part and a flexible film, wherein the excitation part is located between the transfer substrate and the flexible film, and the excitation part is used to generate gas under the excitation of an excitation source to generate a thrust at least in the thickness direction of the transfer substrate, so that the flexible film is deformed at the position where the thrust is applied, so that the contact area between the chips to be transferred in the chip array to be transferred and the flexible film is reduced, and finally the chip array to be transferred is separated from the transfer device, so as to realize the mass transfer of the chips to be transferred. The setting of the flexible film can play a role of buffering and uniform stress, so that at least part of the chips to be transferred in the chip array to be transferred can be separated to the position of the target substrate that needs to be aligned under the action of uniform stress, thereby improving the transfer accuracy. The setting of the flexible film can also prevent the gas generated by the excitation part from corroding the chips to be transferred and other damages.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a transfer device, a transfer system and a transfer method.
Background
At present, micro light emitting diodes (Micro LIGHT EMITTING Diode) are called future display technologies due to high response speed, high color gamut, high brightness, long service life and the like, and Liquid crystal displays (Liquid CRYSTAL DISPLAY, LCD) are matched with millimeter light emitting Diode (MINI LIGHT EMITTING Diode, MINI LED) backlight technologies, quantum technologies or high color rendering technologies, and are means for keeping the service life and brightness advantages of the Micro light emitting diodes (OLED) relative to Organic Light Emitting Diodes (OLED) and reducing the relative disadvantages of the Micro light emitting diodes in contrast and color gamut.
Currently, one of the bottlenecks in mass transfer of the above technologies is mechanical stamping, electrostatic, fluid assembly, and the like. All are difficult to support for mass production and popularization of Micro LEDs and MINI LED technologies due to the problems of transfer efficiency, yield and precision.
Therefore, providing a device to realize mass transfer of small-sized devices such as Micro LEDs and MINI LEDs is a problem to be solved.
Disclosure of Invention
The invention provides a transfer device, a transfer system and a transfer method, which are used for realizing mass transfer of small-size chips.
In a first aspect, an embodiment of the present invention provides a transfer device, including a transfer substrate, an excitation portion, and a flexible film, where the excitation portion is located between the transfer substrate and the flexible film, and the excitation portion is configured to generate a gas under excitation of an excitation source, so as to generate a thrust force at least in a thickness direction of the transfer substrate, so as to deform at least a portion of a position of the flexible film.
Optionally, the transfer substrate has a plurality of grooves thereon;
The excitation part is positioned in the groove,
The flexible film is positioned on the surface of the transfer substrate having the grooves.
Alternatively, the cross section of the groove is rectangular, trapezoidal or arc-shaped, and preferably, the cross section of the groove is parabolic.
Optionally, the flexible film is a non-adhesive material, the transfer device further comprises a first adhesive layer and a second adhesive layer, the first adhesive layer is positioned between the flexible film and the transfer substrate, and the second adhesive layer is positioned on one side of the flexible film away from the transfer substrate;
or the material of the flexible membrane is a viscous material.
Alternatively, the excitation source is an electromagnetic wave energy source, a heat source, or a chemical source, wherein the chemical source comprises a chemical substance.
Optionally, the excitation source is an electromagnetic wave energy source, and at least one side of the excitation portion is permeable to electromagnetic waves of a set wavelength emitted by the electromagnetic wave energy source, and the electromagnetic waves of the set wavelength are used for exciting the excitation portion.
Optionally, at least one of the flexible film and the transfer substrate is transparent to electromagnetic waves of a set wavelength;
Optionally, an electromagnetic wave energy absorbing film is disposed on a side of the structure capable of transmitting the electromagnetic wave with the set wavelength away from the excitation portion, and the electromagnetic wave energy absorbing film is used for absorbing at least the electromagnetic wave with the set wavelength, wherein the structure capable of transmitting the electromagnetic wave with the set wavelength is a flexible film or a transfer substrate;
Optionally, the transfer substrate is transparent to electromagnetic waves of a set wavelength;
alternatively, the flexible film may be transparent to electromagnetic waves of a set wavelength, or the flexible film may be impermeable to electromagnetic waves of a set wavelength.
Optionally, the excitation portion includes a host material, an absorbing material for absorbing excitation energy of the excitation source.
In a second aspect, the embodiment of the invention also provides a transfer system, which comprises the transfer device provided in the first aspect, a chip array to be transferred, a target substrate and an excitation source;
the chip array to be transferred is positioned at one side of the transfer substrate of the transfer device, which is provided with the excitation part, and the chip array to be transferred is positioned at one side of the excitation part, which is far away from the transfer substrate;
The target substrate is positioned on one side of the chip array to be transferred, which is far away from the transfer device, and is separated from the chip array to be transferred;
The excitation source is used for exciting the excitation part to generate gas so as to generate thrust at least in the thickness direction of the transfer substrate, so that at least part of positions of the flexible film are deformed, and at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate.
Optionally, the excitation source is located on a side of the transfer device remote from the array of chips to be transferred.
Optionally, the transfer substrate is provided with a plurality of grooves, and the excitation part is positioned in the grooves;
The chip array to be transferred comprises a plurality of chips to be transferred, and at least one groove is covered by the vertical projection of each chip to be transferred on the substrate to be transferred in the thickness direction of the substrate to be transferred;
optionally, the vertical projection of each chip to be transferred on the substrate to be transferred covers at least two grooves.
In a third aspect, an embodiment of the present invention further provides a transfer method, including:
The excitation part on the transfer substrate is excited by the excitation source, so that the excitation part generates gas to generate thrust at least along the thickness direction of the transfer substrate, at least part of the flexible film is deformed, and at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate.
Optionally, exciting the excitation part in the groove of the transfer substrate by the excitation source to enable the excitation part to generate gas so as to generate thrust at least in the thickness direction of the transfer substrate, so that at least part of the flexible film is deformed, and at least part of the chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate, including:
the surface of the transfer device, which is provided with the flexible film, is placed towards the ground surface, and the excitation part in the groove of the transfer substrate is excited by the excitation source, so that the excitation part generates gas to generate thrust at least along the direction vertical to the thickness direction of the transfer substrate, and at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate under the action of the thrust and gravity.
The transfer device, the transfer system and the transfer method provided by the embodiment of the invention comprise a transfer substrate, an excitation part and a flexible film, wherein the excitation part is positioned between the transfer substrate and the flexible film, and is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate, so that the flexible film is deformed at the position subjected to the thrust, the contact area between a chip to be transferred in the chip array to be transferred and the flexible film is reduced, the chip array to be transferred is finally separated from the transfer device, and the mass transfer of the chips to be transferred in the chip array to be transferred is realized. The flexible film can play the role of buffering and uniform stress, so that the force born by each position of the chip array to be transferred is more uniform, at least part of chips to be transferred in the chip array to be transferred can be separated to the position of the target substrate to be aligned under the effect of uniform stress, and the transfer precision is improved. In addition, the arrangement of the flexible film can reduce the contact between the gas generated by the excitation of the excitation part and the chip to be transferred, and further avoid the damage of the gas generated by the excitation of the excitation part to the corrosion of the chip to be transferred and the like.
Drawings
Fig. 1 is a schematic structural diagram of a transfer device according to an embodiment of the present invention;
FIG. 2 is a schematic view of another transfer device according to an embodiment of the present invention;
FIG. 3 is a schematic view of another transfer device according to an embodiment of the present invention;
FIG. 4 is a schematic view of another transfer device according to an embodiment of the present invention;
FIG. 5 is a schematic view of another transfer device according to an embodiment of the present invention;
FIG. 6 is a schematic view of another transfer device according to an embodiment of the present invention;
FIG. 7 is a schematic view of another transfer device according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a transfer system according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a chip to be transferred separated from a transfer device after an excitation source excites an excitation portion according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a transfer system according to an embodiment of the present invention;
FIG. 11 is a flow chart of a transfer method provided by an embodiment of the present invention;
fig. 12 is a schematic diagram of transferring a chip array to be transferred according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
An embodiment of the present invention provides a transfer device, and fig. 1 is a schematic structural diagram of a transfer device provided in an embodiment of the present invention, and referring to fig. 1, the transfer device includes a transfer substrate 110, an excitation portion 120, and a flexible film 130, where the excitation portion 120 is located between the transfer substrate 110 and the flexible film 130, and the excitation portion 120 is used to generate a gas under excitation of an excitation source, so as to generate a thrust force at least in a thickness direction y of the transfer substrate 110, so as to deform at least a part of a position of the flexible film 130.
The transfer device of the embodiment can be used for transferring a large quantity of small-size devices such as Micro LEDs, MINI LEDs and the like.
Specifically, the transfer substrate 110 may be a hard substrate or a flexible substrate. When the transfer substrate 110 is a hard substrate, the material of the transfer substrate 110 may be a hard material such as glass or quartz glass, and when the transfer substrate 110 is a flexible substrate, the material of the transfer substrate 110 may be a flexible material such as polyethylene terephthalate (Polyethylene terephthalate, PET), polycarbonate (PC), polymethyl methacrylate (polymethyl methacrylate, PMMA), or the like.
The excitation portion 120 may include a material that can generate a gas upon excitation by an excitation source, wherein the excitation portion 120 may be in a solid, liquid, or molten state in an unexcited state. Optionally, after excitation portion 120 is excited, excitation portion 120 itself undergoes a physical reaction, and/or a chemical reaction produces a gas that expands in volume. The excitation portion 120 may be disposed at least a portion of the surface of the transfer substrate 110, where the position of the excitation portion 120 may be set according to the object to be transferred by the transfer device. Alternatively, each exciting section 120 may correspond to one object to be transferred, or a plurality of exciting sections 120 corresponds to one object to be transferred, wherein the object to be transferred may be a small-sized device such as a Micro LED or a MINI LED.
Flexible film 130 may be a material having a relatively high stretch-break ratio. Alternatively, the stretch-break ratio of flexible film 130 is different from the stretch-break ratio of transfer substrate 110. Further, the stretch-break ratio of flexible film 130 is greater than the stretch-break ratio of transfer substrate 110. When the object to be transferred is transferred, the object to be transferred is correspondingly arranged on one side, far away from the transfer substrate 110, of the flexible film 130, the stretch-break ratio of the flexible film 130 is larger than that of the transfer substrate 110, so that after the excitation part 120 is excited to generate gas, the deformation of the flexible film 130 is larger than that of the transfer substrate 110, and the object to be transferred can be separated from the flexible film 130.
The object to be transferred may be a chip array to be transferred, where the chip array to be transferred includes a plurality of chips to be transferred, and the chips to be transferred may include a plurality of Micro LEDs, MINI LEDs, and other small-sized devices. The process of transferring the chip array to be transferred by using the transfer device of this embodiment may be that the chip array to be transferred is disposed on a side of the flexible film 130 of the transfer device away from the transfer substrate 110, the excitation portion 120 of the transfer device is excited by an excitation source, the excitation portion 120 is excited to generate gas and expand in volume and generate thrust force at least in the thickness direction y of the transfer substrate 110, so that the flexible film 130 deforms at the position where the thrust force is received, and further, the contact area between the chip to be transferred and the flexible film 130 in the chip array to be transferred is reduced, and finally, the chip array to be transferred is separated from the transfer device, thereby realizing the transfer of the chip array to be transferred.
The arrangement of the flexible film 130 can enable the excitation part 120 to be excited to generate gas, thrust generated by volume expansion does not directly act on the chip to be transferred, but acts on the chip to be transferred through the flexible film 130, so that the flexible film 130 can play a role of buffering and uniform stress, and further the forces born by all positions of the chip to be transferred are more uniform, the chip to be transferred in the chip array to be transferred can be separated to the position to be aligned of the target substrate under the effect of uniform stress, and the transfer precision is improved. In addition, the flexible film 130 can reduce the contact between the gas generated by the excitation of the excitation portion 120 and the chip to be transferred, so as to avoid the damage of the gas generated by the excitation of the excitation portion 120, such as corrosion of the chip to be transferred.
It should be noted that, the rigid substrate is less prone to deformation relative to the flexible substrate, so when the transfer substrate 110 is a rigid substrate, after the chip array to be transferred is transferred by using the transfer device of this embodiment, the deformation amount of the transfer substrate 110 is smaller, so that the transfer device can be used again for transferring the chip array to be transferred, and the recycling rate is higher.
The transfer device provided by the embodiment comprises a transfer substrate, an excitation part and a flexible film, wherein the excitation part is positioned between the transfer substrate and the flexible film, and is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate, so that the flexible film deforms at the position where the thrust is received, the contact area between a chip to be transferred in the chip array to be transferred and the flexible film is reduced, the chip array to be transferred is finally separated from the transfer device, and the mass transfer of the chip array to be transferred is realized. The flexible film can play the role of buffering and uniform stress, so that the force born by each position of the chip array to be transferred is more uniform, at least part of chips to be transferred in the chip array to be transferred can be separated to the position of the target substrate to be aligned under the effect of uniform stress, and the transfer precision is improved. In addition, the arrangement of the flexible film can reduce the contact between the gas generated by the excitation of the excitation part and the chip to be transferred, and further avoid the damage of the gas generated by the excitation of the excitation part to the corrosion of the chip to be transferred and the like.
Fig. 2 is a schematic structural view of another transfer device according to an embodiment of the present invention, fig. 3 is a schematic structural view of another transfer device according to an embodiment of the present invention, fig. 4 is a schematic structural view of another transfer device according to an embodiment of the present invention, and referring to fig. 2 to fig. 4, optionally, a transfer substrate 110 has a plurality of grooves 111, an excitation portion 120 is located in the grooves 111, and a flexible film 130 is located on a surface of the transfer substrate 110 having the grooves 111.
Specifically, the grooves 111 may be a structure of the transfer substrate 110 itself, and optionally, at least one surface of the transfer substrate 110 has a plurality of grooves 111. The grooves 111 may also be structures of other film layers on the transfer substrate 110, and exemplary structures of a set film layer fixed to the transfer substrate 110 are included on the transfer substrate 110, and the surface of the set film layer structure away from the transfer substrate 110 has a plurality of grooves 111. In this embodiment, the transfer substrate 110 has a plurality of grooves 111, and when the grooves 111 are manufactured, the size of the grooves 111 can be designed according to the size of the chips to be transferred in the array of chips to be transferred, so as to manufacture a precise groove 111 structure. Optionally, one groove 111 corresponds to one chip to be transferred or at least one groove 111 corresponds to one chip to be transferred.
When the transfer substrate 110 is a hard substrate, the grooves 111 may be formed by etching the surface of the hard substrate. When the transfer substrate 110 is a flexible substrate, the grooves 111 may be formed by hot pressing or UV transfer.
The excitation portion 120 is located in the groove 111, and because the groove 111 has a precise structure, after the excitation portion 120 in the groove 111 is excited to generate gas expansion, the injection direction of the expanded gas flow can be precisely controlled, so that when the chip to be transferred is separated from the transfer device, the falling direction of the chip to be transferred from the transfer device can be precisely controlled, and further, when the chip array to be transferred is transferred from the transfer device to the target substrate, the chip to be transferred can precisely fall at the corresponding position of the target substrate, and the accuracy of the chip to be transferred is guaranteed.
Alternatively, the cross section of the groove 111 may be rectangular (the structure shown in fig. 2), trapezoidal (the structure shown in fig. 3), or arc-shaped (the structure shown in fig. 4) based on the above-described embodiment. The cross section of the groove 111 is a cross section of the groove 111 obtained when the transfer device is cut along the thickness direction y of the transfer substrate 110.
Further, the size of the recess 111 gradually increases from the bottom of the recess 111 to the opening of the recess 111, alternatively, the cross-section of the recess 111 is parabolic, so that after the excitation portion 120 is excited to generate gas, a jet flow pointing to the direction of the flexible film 130 from the bottom of the recess 111 is more easily formed, so that the direction in which the chip to be transferred falls off from the transfer device can be parallel to the thickness direction y of the transfer substrate 110, i.e., the direction in which the chip to be transferred falls off from the transfer device can be precisely controlled when the chip to be transferred is separated from the transfer device.
With continued reference to fig. 1-4, the material of flexible membrane 130 may alternatively be a tacky material. Illustratively, the material of flexible membrane 130 may be a gel such as a pressure sensitive adhesive, an optical adhesive, or the like. When the material of the flexible film 130 is a viscous material, the flexible film 130 has viscosity, so that the flexible film 130 and the transfer substrate 110 can be bonded without providing an additional adhesive layer, and when the transfer device is used for transferring the chip array to be transferred, the flexible film 130 can be bonded with the chip array to be transferred, and the structure of the transfer device is lighter and thinner.
Fig. 5 is a schematic structural diagram of another transfer device according to an embodiment of the present invention, referring to fig. 5, in another alternative embodiment of the present invention, flexible film 130 is made of a non-adhesive material, and the transfer device further includes a first adhesive layer 141 and a second adhesive layer 142, wherein first adhesive layer 141 is located between flexible film 130 and transfer substrate 110, and second adhesive layer 142 is located on a side of flexible film 130 away from transfer substrate 110.
Specifically, the first adhesive layer 141 may be used to adhere the flexible film 130 and the transfer substrate 110, and fix the flexible film 130 and the transfer substrate 110. The second adhesive layer 142 may be used to adhere the chip array to be transferred when transferring the chip array to be transferred.
Based on the above technical solutions, optionally, the excitation source is an electromagnetic wave energy source, a heat source or a chemical source, wherein the chemical source includes a chemical substance.
Alternatively, the electromagnetic wave energy source may be a light source, which may be a visible light source, a non-visible light source, a laser light source. Specifically, an excitation unit that can be excited by the excitation source may be provided according to the excitation source, or the excitation source may be selected according to the excitation condition of the excitation unit. Specifically, when the chip array to be transferred is transferred by using the transfer device, it is required to ensure that the energy provided by the excitation source (when the excitation source is an electromagnetic wave energy source, the energy provided by the excitation source is electromagnetic wave energy; when the excitation source is a heat source, the energy provided by the excitation source is heat energy) or the substance (when the excitation source is a chemical source, the substance provided by the excitation source is a chemical substance) can reach the excitation portion, so that the excitation portion can be excited.
Optionally, the excitation source is an electromagnetic wave energy source, and at least one side of the excitation portion 120 is transparent to electromagnetic waves with a set wavelength emitted by the electromagnetic wave energy source, and the electromagnetic waves with the set wavelength are used for exciting the excitation portion 120.
At least one side of the excitation portion 120 may transmit electromagnetic waves with a set wavelength emitted by an electromagnetic wave energy source, which may refer to a transfer device, where a structure at least one side of the excitation portion 120 may transmit electromagnetic waves with a set wavelength emitted by the electromagnetic wave energy source, so as to ensure that electromagnetic waves with a set wavelength used for exciting the excitation portion 120 may reach the excitation portion 120, and further ensure that the excitation portion 120 may enable at least part of chips to be transferred of the chip array to be separated from the transfer device under excitation of the excitation source.
The structure of one side of the excitation portion 120 is a flexible film 130, and the structure of the other side of the excitation portion 120 is a transfer substrate 110. Taking the structure shown in fig. 2 as an example, the upper side of the excitation portion 120 is a flexible film 130, the lower side of the excitation portion 120 is a transfer substrate 110, and optionally, a film structure (not shown) may be also included on the left side and the right side of the excitation portion 120, where in this embodiment, any side structure of the excitation portion 120 may transmit electromagnetic waves with a set wavelength emitted by an electromagnetic wave energy source.
Based on the above technical solution, at least one of the flexible film 130 and the transfer substrate 110 may be optionally transparent to electromagnetic waves of a set wavelength.
Alternatively, the transfer substrate 110 may transmit electromagnetic waves with a set wavelength, and when transferring the chip array to be transferred, the excitation source may be disposed on a side of the transfer substrate 110 away from the flexible film 130.
Alternatively, the flexible film 130 may transmit electromagnetic waves with a set wavelength, and the excitation source may be disposed on a side of the flexible film 130 away from the transfer substrate 110 when transferring the chip array to be transferred.
Optionally, an electromagnetic wave energy absorbing film is disposed on a side of the structure that is far away from the excitation portion and is used for absorbing at least the electromagnetic wave with the set wavelength, wherein the structure that is permeable to the electromagnetic wave with the set wavelength is a flexible film or a transfer substrate.
Wherein the electromagnetic wave energy absorbing film is used for absorbing at least the electromagnetic wave with the set wavelength so that the electromagnetic wave with the set wavelength does not reach the excitation part. By arranging the electromagnetic wave energy absorbing film on one side, far away from the excitation part, of the structure capable of transmitting electromagnetic waves with set wavelength, the excitation part of the transfer device can be prevented from being excited in the transportation process, and the stability of the transfer device in the transportation process is improved. When the transfer device of the embodiment is used for transferring the chip array to be transferred, the electromagnetic wave energy absorption film can be removed, and then the chip array to be transferred is fixed on the flexible film for transferring. When the electromagnetic wave energy source is a light source, the electromagnetic wave energy absorbing film can be a shading film, and the shading film can absorb light to prevent the light from irradiating the excitation part.
Fig. 6 is a schematic structural diagram of another transfer device according to an embodiment of the present invention, and referring to fig. 6, optionally, the transfer substrate 110 is transparent to electromagnetic waves with a set wavelength, and the transfer device further includes a first electromagnetic wave energy absorbing film 150 located on a side of the transfer substrate 110 away from the flexible film 130.
Fig. 7 is a schematic structural diagram of another transfer device according to an embodiment of the present invention, and referring to fig. 7, alternatively, the flexible film 130 may be transparent to electromagnetic waves with a set wavelength, and the transfer device further includes a second electromagnetic wave energy absorbing film 160 located on a side of the flexible film 130 away from the transfer substrate 110.
In another alternative embodiment of the invention, the flexible film is impermeable to electromagnetic waves with set wavelength, so that the flexible film can be used as an electromagnetic wave energy absorbing film, and further the electromagnetic waves with set wavelength of the transfer device in the transportation process are prevented from reaching the excitation part through the flexible film, and the stability of the transfer device in the transportation process is improved. When the flexible film is impermeable to electromagnetic waves of a set wavelength, the transfer substrate can transmit electromagnetic waves of a set wavelength.
Alternatively, the excitation portion may include a host material and an absorbing material for absorbing excitation energy of the excitation source.
Specifically, the absorbing material is used for absorbing energy of the excitation source, so that at least one of a physical reaction and a chemical reaction can be performed on the main body material of the excitation portion of the excitation source to generate gas, or at least one of a physical reaction and a chemical reaction can be performed on the main body material of the excitation portion of the excitation source and the absorbing material to generate gas.
Optionally, the excitation part at least generates chemical reaction under the excitation of the excitation source, the main material can be diethyl ether, the absorbing material can be carbon powder, the excitation part also comprises an oxidant, the oxidant can lead the reaction of the excitation part to be more intense, and further, larger thrust is generated, thereby ensuring that the chip array to be transferred can be separated from the transfer device.
Optionally, when the transfer device is manufactured, the material of the excitation portion may be in a liquid state or a molten state, the material of the excitation portion in the liquid state or the molten state may be coated on the transfer substrate in a coating manner, and when the transfer substrate has a groove, the material of the excitation portion may be coated in the groove, and the coating manner may be doctor blade coating or micro gravure coating.
The embodiment of the invention also provides a transfer system, fig. 8 is a schematic structural diagram of the transfer system provided by the embodiment of the invention, and fig. 9 is a schematic diagram of a chip to be transferred separated from a transfer device after an excitation source excites an excitation part in the embodiment of the invention. Referring to fig. 8 and 9, the transfer system includes the transfer apparatus 100 provided in any of the above embodiments, and further includes a chip array 200 to be transferred, a target substrate 300, and an excitation source 400;
The chip array 200 to be transferred is positioned at one side of the transfer substrate 110 of the transfer device 100 where the excitation part 120 is arranged, and the chip array 200 to be transferred is positioned at one side of the excitation part 120 far from the transfer substrate 110;
The target substrate 300 is located at a side of the chip array 200 to be transferred away from the transfer device 100 and separated from the chip array 200 to be transferred;
The excitation source 400 is configured to excite the excitation portion 120 to generate a gas to generate a pushing force at least in the thickness direction y of the transfer substrate 110, so as to deform at least a portion of the flexible film 130, and separate at least a portion of the chips to be transferred of the chip array 200 to be transferred from the flexible film 130 of the transfer device 100 to the target substrate 300.
Alternatively, the chip array to be transferred 200 may include chips to be transferred 210, which may be Micro LEDs or MINI LEDs.
Optionally, the target substrate 300 is a driving back plate, and the driving back plate includes a plurality of driving circuits, where each driving circuit may correspond to at least one light emitting device. When transferring the chip array 200 to be transferred from the transfer device 100 to the target substrate 300, each light emitting device may be aligned with a corresponding driving circuit first, and then the excitation portion 120 in the transfer device 100 is excited by the excitation source 400, so that the excitation portion 120 is excited to generate gas to generate a thrust force at least in the thickness direction y of the transfer substrate 110, and further the flexible film is deformed, for example, into a convex structure protruding toward the chip to be transferred (see fig. 9), so that the contact area between the flexible film 130 and the chip to be transferred in the chip array 200 to be transferred is reduced, and further the chip to be transferred is separated from the transfer device 100 to the target substrate 300.
In other alternative embodiments of the present invention, the target substrate 300 may also be an intermediate carrier, and after the chip to be transferred is separated from the intermediate carrier, the chip may be transferred from the intermediate carrier to another position.
The transfer system provided by the embodiment of the invention comprises a transfer device, wherein the transfer device comprises a transfer substrate, an excitation part and a flexible film, the excitation part is positioned between the transfer substrate and the flexible film, the excitation part is used for generating gas under the excitation of an excitation source 4 so as to generate thrust at least in the thickness direction of the transfer substrate, the flexible film is deformed at the position subjected to the thrust, the contact area between a chip to be transferred in the chip array to be transferred and the flexible film is reduced, and finally the chip array to be transferred is separated from the transfer device, so that the transfer of the chip array to be transferred is realized. The flexible film can play the role of buffering and uniform stress, so that the force born by each position of the chip array to be transferred is more uniform, at least part of chips to be transferred in the chip array to be transferred can be separated to the position of the target substrate to be aligned under the effect of uniform stress, and the transfer precision is improved. In addition, the arrangement of the flexible film can reduce the contact between the gas generated by the excitation of the excitation part and the chip to be transferred, and further avoid the damage of the gas generated by the excitation of the excitation part to the corrosion of the chip to be transferred and the like.
With continued reference to fig. 8 and 9, alternatively, the excitation source 400 is located on a side of the transfer device 100 away from the chip array 200 to be transferred, and is located between the transfer device 100 and the target substrate 300 with respect to the excitation source 400, so that when the chips to be transferred in the chip array 200 to be transferred are separated from the transfer device 100 to the target substrate 300, the excitation source 400 does not block the chips to be transferred, so that the chips to be transferred can directly reach the target substrate 300 after falling from the transfer device 100, that is, the separation path of the chips to be transferred from the transfer device 100 to the target substrate 300 is not changed, and further, the positions of corresponding driving circuits of the chips to be transferred to the target substrate 300 can be separated after the chip array 200 to be transferred is aligned with the target substrate 300 are ensured, and the transfer accuracy is ensured.
In alternative embodiments of the present invention, excitation source 400 may be located on a side of flexible membrane 130 remote from transfer substrate 110 or at other locations, and the embodiment is not specifically limited herein.
Fig. 10 is a schematic structural diagram of a transfer system according to an embodiment of the present invention, referring to fig. 10, alternatively, the transfer substrate 110 has a plurality of grooves 111, the excitation portion 120 is located in the grooves 111, and the chip array 200 to be transferred includes a plurality of chips to be transferred, and in the thickness direction y of the transfer substrate 110, a vertical projection of each chip to be transferred on the transfer substrate 110 covers at least one groove 111.
Specifically, when the excitation portion 120 is located in the groove 111 of the transfer substrate 110, the position of the flexible film 130 corresponding to the groove 111 is deformed after the excitation portion 120 is excited. In the thickness direction y of the transfer substrate 110, the vertical projection of each chip to be transferred on the transfer substrate 110 covers at least one groove 111, that is, in the thickness direction y of the transfer substrate 110, each chip to be transferred corresponds to at least one groove 111, so that after the flexible film 130 corresponding to the position of the groove 111 is deformed, the chip to be transferred corresponding to the position of the groove 111 can be separated from the transfer device 100.
Optionally, the vertical projection of each chip to be transferred on the substrate to be transferred 110 covers at least two grooves 111, so that the thrust applied to the chip to be transferred is more uniform, which is beneficial to more accurately controlling the separation direction of the chip to be transferred from the device to be transferred 100, so that the chip to be transferred can be separated to the position of the driving circuit corresponding to the chip to be transferred on the target substrate 300, and the transfer precision is improved.
The embodiment of the invention also provides a transferring method, and fig. 11 is a flowchart of the transferring method provided by the embodiment of the invention, and referring to fig. 11, the transferring method includes:
Step 510, exciting an excitation portion on the transfer substrate by an excitation source, so that the excitation portion generates gas to generate a pushing force at least along the thickness direction of the transfer substrate, so as to deform at least part of the flexible film, and at least part of the chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate.
The transfer method provided in this embodiment is executed by the transfer system in any of the above embodiments of the present invention, and has a technical effect of response of the transfer system, which is not described herein.
Fig. 12 is a schematic diagram of transferring an array of chips to be transferred according to an embodiment of the present invention, and referring to fig. 12, optionally, the step 510 may include:
The surface of the transfer device, which is provided with the flexible film, is placed towards the ground surface, and the excitation part in the groove of the transfer substrate is excited by the excitation source, so that the excitation part generates gas to generate thrust at least along the direction vertical to the thickness direction of the transfer substrate, and at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate under the action of the thrust and gravity.
Specifically, due to the gravity of the chip to be transferred, when the surface of the transfer device 100 provided with the flexible film 130 is placed towards the ground surface 600, the thrust generated by the excitation of the excitation portion 120 can ensure that at least part of the chip to be transferred of the chip array to be transferred 200 is separated from the flexible film 130 of the transfer device 100 to the target substrate 300 without being too large, so that the separation of the chip to be transferred and the transfer device 100 is easier to realize.
In other alternative embodiments of the present invention, the surface of transfer device 100 on which flexible membrane 130 is disposed may also be disposed away from surface 600, the invention not being limited in detail herein.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (17)
1. The transfer device is characterized by comprising a transfer substrate, an excitation part and a flexible film, wherein the excitation part is positioned between the transfer substrate and the flexible film and is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate and deform at least part of the position of the flexible film;
The excitation part is positioned in the groove,
The flexible film is positioned on the surface of the transfer substrate with the groove;
The stretch-break ratio of the flexible film is different from the stretch-break ratio of the transfer substrate.
2. The transfer device of claim 1, wherein the grooves are rectangular, trapezoidal or arcuate in cross-section.
3. The transfer device of claim 2, wherein the recess is parabolic in cross-sectional shape.
4. The transfer device of claim 1, wherein the transfer device comprises a plurality of sensors,
The flexible film is a non-adhesive material, the transfer device further comprises a first adhesive layer and a second adhesive layer, the first adhesive layer is positioned between the flexible film and the transfer substrate, and the second adhesive layer is positioned on one side of the flexible film away from the transfer substrate;
Or the material of the flexible film is an adhesive material.
5. The transfer device of claim 1, wherein the excitation source is an electromagnetic wave energy source, a heat source, or a chemical source, wherein the chemical source comprises a chemical species.
6. The transfer device of claim 5, wherein the excitation source is an electromagnetic wave energy source, at least one side of the excitation portion being transparent to electromagnetic waves of a set wavelength emitted by the electromagnetic wave energy source, the electromagnetic waves of the set wavelength being used to excite the excitation portion.
7. The transfer device of claim 6, wherein at least one of the flexible film and the transfer substrate is transparent to electromagnetic waves of the set wavelength.
8. The transfer device according to claim 7, wherein an electromagnetic wave energy absorbing film for absorbing at least the electromagnetic wave of the set wavelength is provided on a side of the structure permeable to the electromagnetic wave of the set wavelength away from the excitation portion, wherein the structure permeable to the electromagnetic wave of the set wavelength is the flexible film or the transfer substrate.
9. The transfer device of claim 7, wherein the transfer substrate is transparent to the electromagnetic waves of the set wavelength.
10. The transfer device of claim 7, wherein the flexible film is transparent to the electromagnetic waves of the set wavelength or the flexible film is impermeable to the electromagnetic waves of the set wavelength.
11. The transfer device of claim 1, wherein the excitation portion comprises a host material, an absorbing material for absorbing excitation energy of the excitation source.
12. A transfer system comprising a transfer device according to any one of claims 1-11;
the device also comprises a chip array to be transferred, a target substrate and an excitation source;
the chip array to be transferred is positioned at one side of the transfer substrate of the transfer device, which is provided with an excitation part, and the chip array to be transferred is positioned at one side of the excitation part, which is far away from the transfer substrate;
the target substrate is positioned on one side of the chip array to be transferred, which is far away from the transfer device, and is separated from the chip array to be transferred;
The excitation source is used for exciting the excitation part to generate gas so as to generate thrust at least in the thickness direction of the transfer substrate, so that at least part of positions of the flexible film are deformed, and at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate.
13. The transfer system of claim 12, wherein the excitation source is located on a side of the transfer device remote from the array of chips to be transferred.
14. The transfer system of claim 12, wherein the transfer substrate has a plurality of recesses therein, the excitation portion being located within the recesses;
The chip array to be transferred comprises a plurality of chips to be transferred, and the vertical projection of each chip to be transferred on the substrate to be transferred covers at least one groove in the thickness direction of the substrate to be transferred.
15. The transfer system of claim 14, wherein a perpendicular projection of each of the chips to be transferred onto the substrate to be transferred covers at least two of the grooves.
16. A transfer method, comprising:
Exciting an excitation part on a transfer substrate by an excitation source to enable the excitation part to generate gas so as to generate thrust at least along the thickness direction of the transfer substrate, so that at least part of positions of a flexible film are deformed, and at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to a target substrate;
The transfer substrate is provided with a plurality of grooves;
The excitation part is positioned in the groove,
The flexible film is positioned on the surface of the transfer substrate with the groove;
The stretch-break ratio of the flexible film is different from the stretch-break ratio of the transfer substrate.
17. The transfer method according to claim 16, wherein exciting the exciting section in the groove of the transfer substrate by the exciting source to cause the exciting section to generate gas to generate thrust at least in the thickness direction of the transfer substrate to deform at least part of the positions of the flexible film to separate at least part of chips to be transferred of the chip array to be transferred from the flexible film of the transfer device to the target substrate, comprises:
And placing the surface of the transfer device, which is provided with the flexible film, towards the ground surface, and exciting an excitation part in a groove of the transfer substrate by an excitation source so that the excitation part generates gas to generate thrust at least in the direction perpendicular to the thickness direction of the transfer substrate, so that at least part of chips to be transferred of the chip array to be transferred are separated from the flexible film of the transfer device to the target substrate under the action of the thrust and gravity.
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| CN110797295A (en) * | 2019-11-15 | 2020-02-14 | 广东省半导体产业技术研究院 | Chip transfer method and device |
| CN214672519U (en) * | 2021-02-09 | 2021-11-09 | 南昌广恒电子中心(有限合伙) | Transfer device and transfer system |
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| JPS6314341A (en) * | 1986-07-07 | 1988-01-21 | Dainippon Printing Co Ltd | Method and equipment for manufacture of flexible laser disk |
| JP4021614B2 (en) * | 2000-12-11 | 2007-12-12 | 株式会社東芝 | Semiconductor element pickup jig, semiconductor element pickup device, semiconductor element pickup method, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus |
| WO2012142177A2 (en) * | 2011-04-11 | 2012-10-18 | Ndsu Research Foundation | Selective laser-assisted transfer of discrete components |
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| CN110797295A (en) * | 2019-11-15 | 2020-02-14 | 广东省半导体产业技术研究院 | Chip transfer method and device |
| CN214672519U (en) * | 2021-02-09 | 2021-11-09 | 南昌广恒电子中心(有限合伙) | Transfer device and transfer system |
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