CN112820661A - Etching end point detection system and method based on resonator - Google Patents
Etching end point detection system and method based on resonator Download PDFInfo
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- CN112820661A CN112820661A CN202011619730.1A CN202011619730A CN112820661A CN 112820661 A CN112820661 A CN 112820661A CN 202011619730 A CN202011619730 A CN 202011619730A CN 112820661 A CN112820661 A CN 112820661A
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- 238000005530 etching Methods 0.000 title claims abstract description 61
- 238000001514 detection method Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title description 10
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 abstract description 5
- 238000004556 laser interferometry Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001636 atomic emission spectroscopy Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005329 nanolithography Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Abstract
本发明涉及一种基于谐振器的刻蚀终点检测系统，包括谐振器，被放置在刻蚀腔体中并与待刻蚀样品一起被刻蚀；检测器，与所述谐振器相连接，用于检测并输出所述谐振器的参数；和比较器，与所述检测器相连接，用于接收并比较所述谐振器的参数与预设值。与激光干涉和物质光谱检测系统相比，谐振器与样品处于相同环境中，而且与样品材料相同，因而该系统具有的更高的检测精度。在该检测系统中，与激光干涉检测系统相比，检测位置放在被刻蚀样品以外区域，增加了样品有效面积；与物质光谱检测系统相比，信号采集与样品刻蚀独立，可以实现更小刻蚀面积样品检测。
The invention relates to a resonator-based etching end-point detection system, comprising a resonator, which is placed in an etching cavity and is etched together with a sample to be etched; a detector is connected to the resonator and used for etching for detecting and outputting the parameters of the resonator; and a comparator, connected with the detector, for receiving and comparing the parameters of the resonator with a preset value. Compared with laser interferometry and spectroscopic detection systems, the resonator and the sample are in the same environment and the same material as the sample, so the system has higher detection accuracy. In this detection system, compared with the laser interference detection system, the detection position is placed outside the etched sample, which increases the effective area of the sample; compared with the material spectrum detection system, the signal acquisition is independent of the sample etching, which can achieve more Small etched area sample detection.
Description
Technical Field
The present application relates to the field of semiconductor etching detection, and in particular, to a system and method for detecting an etching endpoint based on a resonator.
Background
The inductively coupled plasma etching is an important nano-processing technology, and the etching precision of the inductively coupled plasma etching in nano-processing is an important technical index. At present, two detection systems are commercially available, one is based on an Optical Emission Spectroscopy (OES) that different plasmas have different glow wavelengths, and the other is based on a Laser Interferometer (LI) based on the principle of Laser interference. However, the OES has the defects that the end point can be judged only by etching different materials, and a large amount of etching byproducts are generated; LI has limited laser wavelength and can only measure thin films with thickness greater than 200nm, and the defects of the refractive index of the material (errors in real-world measurement) are known.
In view of the above drawbacks, there is a need for a detection system and method for detecting a nano-etching endpoint with high accuracy.
Disclosure of Invention
The present application is proposed to solve the above-mentioned technical problems.
In one aspect, embodiments of the present application provide a resonator-based etch endpoint detection system. The resonator-based etch endpoint detection system comprises: a resonator placed in the etching chamber and etched together with a sample to be etched; the detector is connected with the resonator and is used for detecting and outputting the parameters of the resonator; and the comparator is connected with the detector and used for receiving and comparing the parameters of the resonator with preset values.
On the other hand, the embodiment of the application provides an etching endpoint detection method based on a resonator. The etching end point detection method based on the resonator comprises the following steps: simultaneously etching the resonator and a sample to be etched in the etching cavity; detecting a parameter of the resonator; and comparing the parameters of the resonator with preset values.
The invention has the advantages that the resonator is in the same environment as the etched sample and is made of the same material as the etched sample, so that the detection system has higher detection precision; compared with a laser interference detection system, the detection position is positioned in a region outside the etched sample, so that the effective area of the sample is increased; compared with a substance spectrum detection system, signal acquisition and sample etching are independent, and sample detection with smaller etching area can be realized.
Drawings
The above and other objects, features and advantages of the present application will become more apparent by describing in more detail embodiments of the present application with reference to the attached drawings. The accompanying drawings are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings, like reference numbers generally represent like parts or steps.
Figure 1 shows a schematic diagram of a resonator-based etch endpoint detection system, in accordance with an embodiment of the present invention.
FIG. 2 shows a schematic flow diagram of a resonator-based etch endpoint detection method according to an embodiment of the invention.
Detailed Description
Hereinafter, example embodiments according to the present application will be described in detail with reference to the accompanying drawings. It should be understood that the described embodiments are only some embodiments of the present application and not all embodiments of the present application, and that the present application is not limited by the example embodiments described herein.
Summary of the application
In the existing etching end point detection system, an emission spectrometer has different glow wavelengths based on different plasmas, but can judge the etching end point only when different materials are etched, and also generates a large amount of etching byproducts; laser interferometers are based on the principle of laser interference, but are limited to laser wavelengths and can only measure thin films with thicknesses greater than 200nm, and also know the refractive index of the material.
It is therefore desirable to overcome the above-mentioned deficiencies by providing a detection system and method that can detect the end point of nanolithography with high accuracy.
The invention provides a system and a method for detecting a nano etching end point based on a resonator based on a frequency tracking principle, can be used for high-precision detection of nano etching depth, and is generally suitable for various dry etching systems.
Exemplary devices
The application provides an etching end point detection system based on a resonator. The resonator-based etch endpoint detection system comprises: a resonator placed in the etching chamber and etched together with a sample to be etched; the detector is connected with the resonator and is used for detecting and outputting the parameters of the resonator; and the comparator is connected with the detector and used for receiving and comparing the parameters of the resonator with preset values. Here, the parameter of the resonator may be one or more of a mass and/or mass variation value of the resonator, a frequency and/or frequency variation value of the resonator, or an etch depth value of the resonator.
A resonator-based etch endpoint detection system according to an embodiment of the present invention is described in detail below with reference to fig. 1.
As shown in fig. 1, the etching endpoint detection system based on the resonator according to the embodiment of the present invention includes a resonator, an acquisition circuit, a conversion circuit, a comparison circuit and a human-computer interface, wherein the resonator is connected to the acquisition circuit, the acquisition circuit is connected to the conversion circuit, and the comparison circuit is respectively connected to the conversion circuit and the human-computer interface.
When the inductive coupling plasma or the similar dry etching system is used for processing the sample in the micro-nano scale, the sample and the resonator are placed into an etching cavity; the acquisition circuit acquires the initial resonant frequency of the resonator and outputs the initial resonant frequency to the conversion circuit; the conversion circuit receives the initial resonant frequency of the resonator, converts the initial resonant frequency value into a set metering value and stores the set metering value; the man-machine interface inputs an ideal etching depth value to the comparison circuit; etching a sample and a resonator which are placed in an etching cavity by using the plasma, wherein the resonator generates mass change during etching, and the frequency of the resonator is changed due to the mass change of the resonator; the acquisition circuit acquires the resonance frequency of the resonator in real time and outputs the resonance frequency to the conversion circuit; the conversion circuit receives the resonant frequency of the resonator, calculates the change value of the resonant frequency of the resonator and converts the change value into the etching depth value of the resonator, and then the conversion circuit outputs the converted etching depth value of the resonator to the comparison circuit; the comparison circuit compares the etching depth value of the resonator input by the conversion circuit with the ideal etching depth value input by the human-computer interface, if the etching depth value of the resonator is the same as the ideal etching depth value input by the human-computer interface, the plasma etching is stopped, and otherwise, the plasma etching is continued.
In some embodiments, the material of the resonator is a silicon material but not limited to a silicon material, and the material of the etched region of the resonator may be the same as the material of the sample. In particular, the material of the resonator as a whole is the same as that of the sample.
In some embodiments, the resonator may include a semiconductor thin film material disposed thereon or deposited thereon.
In some embodiments, the resonator may be defined as a plate capacitor structure.
Compared with a laser interference and substance spectrum detection system, the etching end point detection system based on the resonator has the advantages that the resonator and an etched sample are in the same environment and are made of the same material as the etched sample, and the system has higher detection precision; compared with a laser interference detection system, the detection position is arranged in a region outside the etched sample, so that the effective area of the sample is increased; compared with a substance spectrum detection system, the signal acquisition is independent of sample etching, and sample detection with smaller etching area can be realized; the method can detect partial etching, total etching and multilayer etching of the film, and is generally suitable for various dry etching systems; the resonator is capable of depositing a variety of thin film materials so that various thin film material etches can be detected.
Exemplary method
Fig. 2 is a schematic flowchart of a resonator-based etching endpoint detection method according to an exemplary embodiment of the present application.
As shown in fig. 2, the method for detecting the etching endpoint based on the resonator comprises the following steps:
step 10, simultaneously etching the resonator and a sample to be etched in the etching cavity;
step 20, detecting parameters of the resonator; and
and step 30, comparing the parameters of the resonator with a preset value, stopping plasma etching if the parameters of the resonator are the same as the preset value, and otherwise, continuing the plasma etching.
Here, the parameter of the resonator may be one or more of a mass and/or mass variation value of the resonator, a frequency and/or frequency variation value of the resonator, or an etch depth value of the resonator.
In some embodiments, detecting the parameter of the resonator may include detecting a frequency variation value of the resonator and converting the frequency variation value of the resonator to an etch depth value of the resonator.
In some embodiments, detecting a frequency variation value of the resonator comprises: detecting the initial resonant frequency of the resonator before the resonator is etched; and after the resonator is etched, detecting the resonant frequency of the resonator and obtaining a resonant frequency change value.
In some embodiments, the human machine interface inputs a preset value to the comparator, where the preset value is an ideal etching depth value of the resonator.
In the etching end point detection method based on the resonator, the resonator and the etched sample are in the same environment and are made of the same material as the etched sample, so that the detection system has higher detection accuracy; compared with a laser interference detection method, the detection position is positioned in a region outside the etched sample, so that the effective area of the sample is increased; compared with a substance spectrum detection method, signal acquisition and sample etching are independent, and sample detection with smaller etching area can be realized.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
The foregoing describes the general principles of the present application in conjunction with specific embodiments, however, it is noted that the advantages, effects, etc. mentioned in the present application are merely examples and are not limiting, and they should not be considered essential to the various embodiments of the present application. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the foregoing disclosure is not intended to be exhaustive or to limit the disclosure to the precise details disclosed.
The block diagrams of devices, apparatuses, systems referred to in this application are only given as illustrative examples and are not intended to require or imply that the connections, arrangements, configurations, etc. must be made in the manner shown in the block diagrams. These devices, apparatuses, devices, systems may be connected, arranged, configured in any manner, as will be appreciated by those skilled in the art. Words such as "including," "comprising," "having," and the like are open-ended words that mean "including, but not limited to," and are used interchangeably therewith. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise. The word "such as" is used herein to mean, and is used interchangeably with, the phrase "such as but not limited to".
It should also be noted that in the devices, apparatuses, and methods of the present application, the components or steps may be decomposed and/or recombined. These decompositions and/or recombinations are to be considered as equivalents of the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
Claims (10)
1. A resonator-based etch endpoint detection system, the detection system comprising:
a resonator placed in the etching chamber and etched together with a sample to be etched;
the detector is connected with the resonator and is used for detecting and outputting the parameters of the resonator; and
and the comparator is connected with the detector and used for receiving and comparing the parameters of the resonator with preset values.
2. The resonator-based etch endpoint detection system of claim 1,
the detection system further comprises a human-computer interface which is connected with the comparator and used for providing a preset value for the comparator.
3. The resonator-based etch endpoint detection system of claim 1,
the detector comprises:
a collecting circuit connected to the resonator for collecting and outputting a resonance frequency of the resonator, an
And the conversion circuit is connected with the acquisition circuit and the comparison circuit and is used for receiving the acquired resonant frequency of the resonator, acquiring a change value of the resonant frequency of the resonator and converting the change value of the resonant frequency into an etching depth value of the resonator.
4. The resonator-based etch endpoint detection system of claim 1,
the detector comprises:
a collecting circuit connected with the resonator for collecting the resonant frequency of the resonator, acquiring and outputting the variation value of the resonant frequency of the resonator, and
and the conversion circuit is connected with the acquisition circuit and the comparison circuit and is used for receiving and converting the acquired change value of the resonant frequency of the resonator into the etching depth value of the resonator.
5. The resonator-based etch endpoint detection system of claim 1,
the etched area of the resonator is made of the same material as the sample.
6. The resonator-based etch endpoint detection system of claim 1,
the resonator includes a semiconductor thin film material disposed thereon.
7. The resonator-based etch endpoint detection system of claim 1,
the resonator includes a semiconductor thin film material deposited thereon.
8. An etching end point detection method based on a resonator is characterized by comprising the following steps:
simultaneously etching the resonator and a sample to be etched in the etching cavity;
detecting a parameter of the resonator; and
and comparing the parameters of the resonator with preset values.
9. The resonator-based etch endpoint detection method of claim 8,
detecting a parameter of the resonator, comprising:
detecting a frequency variation value of the resonator; and
and converting the frequency change value of the resonator into the etching depth value of the resonator.
10. The resonator-based etch endpoint detection method of claim 9,
the detecting a frequency variation value of the resonator includes:
detecting an initial resonant frequency of the resonator before the resonator is etched; and
and after the resonator is etched, detecting the resonance frequency of the resonator and obtaining a resonance frequency change value.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011619730.1A CN112820661A (en) | 2020-12-31 | 2020-12-31 | Etching end point detection system and method based on resonator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011619730.1A CN112820661A (en) | 2020-12-31 | 2020-12-31 | Etching end point detection system and method based on resonator |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000060211A (en) * | 1999-03-12 | 2000-10-16 | 김영환 | Detecting method for etch end point of semiconductor device |
| US20020100745A1 (en) * | 1998-03-02 | 2002-08-01 | Dirk M. Knotter | Ethching method |
| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
| CN111653467A (en) * | 2020-06-02 | 2020-09-11 | 西安交通大学 | A resonator-based etching endpoint detection system and method |
-
2020
- 2020-12-31 CN CN202011619730.1A patent/CN112820661A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020100745A1 (en) * | 1998-03-02 | 2002-08-01 | Dirk M. Knotter | Ethching method |
| KR20000060211A (en) * | 1999-03-12 | 2000-10-16 | 김영환 | Detecting method for etch end point of semiconductor device |
| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
| CN111653467A (en) * | 2020-06-02 | 2020-09-11 | 西安交通大学 | A resonator-based etching endpoint detection system and method |
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