CN112802732B - Ceramic migration tube and manufacturing method thereof - Google Patents
Ceramic migration tube and manufacturing method thereof Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 131
- 230000005012 migration Effects 0.000 title claims abstract description 42
- 238000013508 migration Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 238000012546 transfer Methods 0.000 claims abstract description 48
- 230000001629 suppression Effects 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 34
- 229910000679 solder Inorganic materials 0.000 claims description 28
- 238000005219 brazing Methods 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 8
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910000833 kovar Inorganic materials 0.000 claims description 6
- 229910052573 porcelain Inorganic materials 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 51
- 239000003814 drug Substances 0.000 description 6
- 229940079593 drug Drugs 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000002360 explosive Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/06—Electron- or ion-optical arrangements
- H01J49/062—Ion guides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本申请涉及痕量探测技术领域,尤其涉及一种陶瓷迁移管及其制作方法。该陶瓷迁移管包括:迁移室;电离室,设置在迁移室的一端;法拉第杯组件,设置在迁移室的另一端;离子门组件,设置在电离室与迁移室之间;以及抑制栅,设置在迁移室与法拉第杯组件之间;其中,迁移室包括多个环形绝缘陶瓷片和多个环形金属电极片,环形绝缘陶瓷片与环形金属电极片依次交替排列,相邻的环形绝缘陶瓷片与环形金属电极片密封焊接。与现有技术相比,迁移室中的环形绝缘陶瓷片与环形金属电极片依次交替排列,相邻的环形绝缘陶瓷片与环形金属电极片密封焊接,安装方便,制造成本低;密封性能佳,连接可靠牢固,机械强度高,抗震性能强,提高了系统稳定性。
The present application relates to the technical field of trace detection, in particular to a ceramic transfer tube and a manufacturing method thereof. The ceramic migration tube comprises: a migration chamber; an ionization chamber, arranged at one end of the migration chamber; a Faraday cup assembly, arranged at the other end of the migration chamber; an ion gate assembly, arranged between the ionization chamber and the migration chamber; and a suppression grid, arranged Between the migration chamber and the Faraday cup assembly; wherein, the migration chamber includes a plurality of annular insulating ceramic sheets and a plurality of annular metal electrode sheets, the annular insulating ceramic sheets and the annular metal electrode sheets are arranged alternately in sequence, and the adjacent annular insulating ceramic sheets and the annular metal electrode sheets are arranged alternately. The annular metal electrode sheet is sealed and welded. Compared with the prior art, the ring-shaped insulating ceramic sheets and ring-shaped metal electrode sheets in the migration chamber are arranged alternately in sequence, and the adjacent ring-shaped insulating ceramic sheets and ring-shaped metal electrode sheets are sealed and welded, which is convenient for installation and low in manufacturing cost; the sealing performance is good, The connection is reliable and firm, the mechanical strength is high, and the shock resistance is strong, which improves the system stability.
Description
技术领域technical field
本申请涉及痕量探测技术领域,尤其涉及一种陶瓷迁移管及其制作方法。The present application relates to the technical field of trace detection, in particular to a ceramic transfer tube and a manufacturing method thereof.
背景技术Background technique
离子迁移谱仪具有灵敏、快速、功耗低、便携等的优点,是目前国际上反恐、缉毒等领域用于痕量物质现场检测的主流技术。利用离子迁移检测技术大大加强了边防、海关、民航等重要关口对人员和行李的监测力度,有效的打击了走私、贩毒和恐怖袭击活动的实施。Ion mobility spectrometer has the advantages of sensitivity, speed, low power consumption, and portability. It is currently the mainstream technology for on-site detection of trace substances in the fields of anti-terrorism and anti-drugs in the world. The use of ion migration detection technology has greatly strengthened the monitoring of personnel and luggage at important gates such as border defense, customs, and civil aviation, and effectively cracked down on smuggling, drug trafficking, and terrorist attacks.
迁移管是离子迁移谱仪的核心器件,也是决定迁移谱仪分离和检测的关键因素。现有商用离子迁移谱仪的迁移管主要采用聚酰亚胺/聚四氟/匹克等绝缘材料与金属电极通过螺母、弹簧及O形密封圈压接而成。Migration tube is the core device of ion mobility spectrometer, and also the key factor to determine the separation and detection of ion mobility spectrometer. The transfer tube of the existing commercial ion mobility spectrometer is mainly made of insulating materials such as polyimide/polytetrafluoroethylene/Pick and metal electrodes are crimped by nuts, springs and O-rings.
现有商用离子迁移谱仪的迁移管,装配和密封困难,费时费力,制造成本高,不利于离子迁移谱仪的批量化生产和提高系统稳定性。The transfer tubes of existing commercial ion mobility spectrometers are difficult to assemble and seal, time-consuming and laborious, and have high manufacturing costs, which is not conducive to the mass production of ion mobility spectrometers and the improvement of system stability.
此外,大部分毒品和爆炸物的沸点都比较高(高于250℃),检测过程中要获得更好的检测效果和更快的清洁速度需要将迁移管温度设置在更高的工作温度。然而,无论是聚酰亚胺、聚四氟还是匹克均难以工作在超过200℃的工作温度,且该类迁移管在高温还会产生痕量释放、多次的冷热冲击也会影响迁移管的密封性进而影响离子迁移谱仪的正常使用。In addition, the boiling point of most drugs and explosives is relatively high (higher than 250°C). To obtain better detection effect and faster cleaning speed during the detection process, the temperature of the transfer tube needs to be set at a higher working temperature. However, no matter it is polyimide, polytetrafluoroethylene or peak, it is difficult to work at a working temperature exceeding 200°C, and this type of transfer tube will also produce trace release at high temperatures, and multiple thermal shocks will also affect the transfer tube. The tightness of the ion mobility spectrometer affects the normal use of the ion mobility spectrometer.
发明内容Contents of the invention
有鉴于此,本申请提供了一种陶瓷迁移管及其制作方法,用以解决现有迁移管装配和密封困难、费时费力、制造成本高的问题。In view of this, the present application provides a ceramic transfer tube and a manufacturing method thereof, which are used to solve the problems of difficult assembly and sealing, time-consuming and labor-intensive, and high manufacturing costs of the existing transfer tube.
根据本申请的第一方面,提供了一种陶瓷迁移管。该陶瓷迁移管包括:According to the first aspect of the present application, a ceramic transfer tube is provided. The ceramic transfer tube includes:
迁移室;Migration chamber;
电离室,所述电离室设置在所述迁移室的一端;an ionization chamber, the ionization chamber is arranged at one end of the migration chamber;
法拉第杯组件,所述法拉第杯组件设置在所述迁移室的另一端;a Faraday cup assembly, the Faraday cup assembly is arranged at the other end of the migration chamber;
离子门组件,所述离子门组件设置在所述电离室与所述迁移室之间;以及an ion gate assembly disposed between the ionization chamber and the migration chamber; and
抑制栅,所述抑制栅设置在所述迁移室与所述法拉第杯组件之间;a suppression grid disposed between the migration chamber and the Faraday cup assembly;
其中,所述迁移室包括多个环形绝缘陶瓷片和多个环形金属电极片,所述环形绝缘陶瓷片与所述环形金属电极片依次交替排列,相邻的所述环形绝缘陶瓷片与所述环形金属电极片密封焊接。Wherein, the migration chamber includes a plurality of ring-shaped insulating ceramic sheets and a plurality of ring-shaped metal electrode sheets, the ring-shaped insulating ceramic sheets and the ring-shaped metal electrode sheets are arranged alternately in sequence, and the adjacent ring-shaped insulating ceramic sheets are connected to the ring-shaped metal electrode sheets. The annular metal electrode sheet is sealed and welded.
可选地,所述环形绝缘陶瓷片与所述环形金属电极片通过焊料焊接固定,所述环形金属电极片的膨胀系数等于或者接近于所述环形绝缘陶瓷片的膨胀系数。Optionally, the annular insulating ceramic sheet and the annular metal electrode sheet are fixed by soldering, and the expansion coefficient of the annular metal electrode sheet is equal to or close to that of the annular insulating ceramic sheet.
可选地,所述环形绝缘陶瓷片采用95瓷或者99瓷,所述环形绝缘陶瓷片厚度为1mm-3mm;和/或,Optionally, the annular insulating ceramic sheet is made of 95 porcelain or 99 porcelain, and the thickness of the annular insulating ceramic sheet is 1mm-3mm; and/or,
所述环形金属电极片采用可伐合金,所述环形金属电极片厚度为1mm-3mm,和/或,The annular metal electrode sheet is made of Kovar alloy, and the thickness of the annular metal electrode sheet is 1mm-3mm, and/or,
所述焊料采用银铜合金。The solder is silver-copper alloy.
可选地,所述环形绝缘陶瓷片表面金属化并烧氢处理,所述环形金属电极片表面经清洗镀镍并烧氢处理。Optionally, the surface of the annular insulating ceramic sheet is metallized and treated by burning hydrogen, and the surface of the ring-shaped metal electrode piece is cleaned and plated with nickel and treated by burning hydrogen.
可选地,所述电离室包括源座、C形弹片和片状电离源,所述源座上贯通设置有中空孔,所述C形弹片过盈配合固定在所述中空孔中,所述片状电离源采用溅射或蒸镀方式沉积在所述C形弹片内壁上;Optionally, the ionization chamber includes a source base, a C-shaped shrapnel and a sheet-shaped ionization source, a hollow hole is formed through the source base, and the C-shaped shrapnel is fixed in the hollow hole with an interference fit. The sheet ionization source is deposited on the inner wall of the C-shaped shrapnel by sputtering or evaporation;
在所述中空孔内壁上突出设置有限位凸台,用于轴向顶挡所述C形弹片;A limiting boss is protrudingly provided on the inner wall of the hollow hole for axially blocking the C-shaped shrapnel;
在所述中空孔的径向一侧设置有夹取凹槽,用于夹取安装或者拆卸所述C形弹片。A clamping groove is provided on one radial side of the hollow hole for clamping, installing or dismounting the C-shaped elastic piece.
可选地,所述离子门组件包括第一离子门栅、陶瓷隔离片和第二离子门栅;所述陶瓷隔离片设置在所述第一离子门栅与所述第二离子门栅之间,用于使所述第一离子门栅与所述第二离子门栅间隔设定距离;所述陶瓷隔离片与所述第一离子门栅及所述第二离子门栅之间密封焊接。Optionally, the ion gate assembly includes a first ion gate, a ceramic spacer and a second ion gate; the ceramic spacer is disposed between the first ion gate and the second ion gate , for setting the distance between the first ion gate and the second ion gate; the ceramic spacer is sealed and welded to the first ion gate and the second ion gate.
可选地,所述法拉第杯组件包括法拉第杯和套状在所述法拉第杯上的陶瓷屏蔽罩;所述法拉第杯表面抛光并镀金,以减小探测器噪声;所述陶瓷屏蔽罩外圈金属化处理,焊接后与所述抑制栅等电位,用于屏蔽外界信号对所述法拉第杯信号的干扰;所述法拉第杯通过连接杆与所述陶瓷屏蔽罩密封焊接。Optionally, the Faraday cup assembly includes a Faraday cup and a ceramic shield sleeved on the Faraday cup; the surface of the Faraday cup is polished and gold-plated to reduce detector noise; the outer ring of the ceramic shield is metal After welding, it is equipotential with the suppression grid to shield the interference of external signals on the Faraday cup signal; the Faraday cup is sealed and welded to the ceramic shielding cover through a connecting rod.
根据本申请的第二方面,提供了一种陶瓷迁移管制作方法。该陶瓷迁移管制作方法包括:According to the second aspect of the present application, a method for manufacturing a ceramic transfer tube is provided. The manufacturing method of the ceramic transfer tube comprises:
提供待焊陶瓷迁移管预制件,所述待焊陶瓷迁移管预制件包括多个环形绝缘陶瓷片和多个环形金属电极片,所述环形绝缘陶瓷片与所述环形金属电极片依次交替排列,相邻所述环形绝缘陶瓷片与所述环形金属电极片之间设置有焊料;A ceramic migration tube preform to be welded is provided, the ceramic migration tube preform to be welded includes a plurality of annular insulating ceramic sheets and a plurality of annular metal electrode sheets, and the annular insulating ceramic sheets and the annular metal electrode sheets are arranged alternately in sequence, Solder is disposed between the adjacent ring-shaped insulating ceramic sheet and the ring-shaped metal electrode sheet;
将所述待焊陶瓷迁移管预制件放置于氢钎焊炉中,在氢气保护氛围下以第一预设升温速率将所述氢钎焊炉升温至第一预设温度,并保温第一预设时间段,其中所述第一预设温度小于所述焊料熔点;Place the preformed ceramic transfer tube to be welded in a hydrogen brazing furnace, raise the temperature of the hydrogen brazing furnace to a first preset temperature at a first preset heating rate under a hydrogen protective atmosphere, and keep warm for the first preset temperature. Set a time period, wherein the first preset temperature is less than the melting point of the solder;
以第二预设升温速率将所述氢钎焊炉升温至第二预设温度,并保温第二预设时间段,其中所述第二预设温度大于或等于所述焊料熔点,所述第二预设升温速率小于所述第一预设升温速率;raising the temperature of the hydrogen brazing furnace to a second preset temperature at a second preset heating rate, and keeping it warm for a second preset time period, wherein the second preset temperature is greater than or equal to the melting point of the solder, and the first The second preset heating rate is less than the first preset heating rate;
以第三预设降温速率将所述氢钎焊炉降温至第三预设温度;cooling the hydrogen brazing furnace to a third preset temperature at a third preset cooling rate;
将所述氢钎焊炉降温至第四预设温度,并停止所述氢钎焊炉中的氢气供给。The temperature of the hydrogen brazing furnace is lowered to a fourth preset temperature, and the supply of hydrogen in the hydrogen brazing furnace is stopped.
可选地,所述待焊陶瓷迁移管预制件中的所述环形绝缘陶瓷片表面金属化并烧氢处理,所述待焊陶瓷迁移管预制件中的所述环形金属电极片表面经清洗镀镍并烧氢处理,所述焊料采用银铜合金。Optionally, the surface of the annular insulating ceramic sheet in the ceramic transfer tube preform to be welded is metallized and treated with hydrogen, and the surface of the annular metal electrode sheet in the ceramic transfer tube preform to be welded is cleaned and plated Nickel is processed by burning hydrogen, and the solder is silver-copper alloy.
可选地,还提供有装架工具,所述装架工具将所述待焊陶瓷迁移管预制件中的所述多个环形绝缘陶瓷片和所述多个环形金属电极片同轴固定。Optionally, a mounting tool is also provided, the mounting tool coaxially fixes the plurality of annular insulating ceramic sheets and the plurality of annular metal electrode sheets in the ceramic transfer tube preform to be welded.
应当理解的是,以上的一般描述和后文的细节描述仅是示例性的,并不能限制本申请。It is to be understood that both the foregoing general description and the following detailed description are exemplary only and are not restrictive of the application.
附图说明Description of drawings
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本申请的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the specific embodiments or prior art. Obviously, the accompanying drawings in the following description The drawings are some implementations of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.
图1为本申请实施例所提供的陶瓷迁移管的剖视图。Fig. 1 is a cross-sectional view of a ceramic transfer tube provided by an embodiment of the present application.
图2为图1中电离室的结构示意图。FIG. 2 is a schematic structural diagram of the ionization chamber in FIG. 1 .
图3为图1中离子门组件的分解示意图。FIG. 3 is an exploded schematic view of the ion gate assembly in FIG. 1 .
图4为图1中环形绝缘陶瓷片的结构示意图。FIG. 4 is a schematic structural diagram of the annular insulating ceramic sheet in FIG. 1 .
图5为图1中环形金属电极片的结构示意图。FIG. 5 is a schematic structural view of the annular metal electrode sheet in FIG. 1 .
图6为图1中抑制栅及法拉第杯组件的结构示意图。FIG. 6 is a schematic structural diagram of the suppression grid and the Faraday cup assembly in FIG. 1 .
附图标记:Reference signs:
1-电离室;1 - ionization chamber;
11-源座;11 - source seat;
111-中空孔;111-hollow hole;
112-限位凸台;112-limiting boss;
113-夹取凹槽;113-clamping groove;
12-C形弹片;12-C-shaped shrapnel;
13-片状电离源;13-sheet ionization source;
2-离子门组件;2 - ion gate assembly;
21-第一离子门栅;21 - the first ion gate;
22-陶瓷隔离片;22-ceramic separator;
23-第二离子门栅;23 - second ion gate;
3-迁移室;3 - migration chamber;
31-环形绝缘陶瓷片;31-annular insulating ceramic sheet;
32-环形金属电极片;32-ring metal electrode piece;
4-抑制栅;4 - suppression grid;
5-法拉第杯组件;5- Faraday cup assembly;
51-法拉第杯;51 - Faraday Cup;
52-陶瓷屏蔽罩。52-ceramic shield.
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本申请的实施例,并与说明书一起用于解释本申请的原理。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description serve to explain the principles of the application.
具体实施方式Detailed ways
下面将结合附图对本申请的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions of the present application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
在本申请实施例中使用的术语是仅仅出于描述特定实施例的目的,而非旨在限制本申请。在本申请实施例和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式,除非上下文清楚地表示其他含义。Terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of this application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.
应当理解,本文中使用的术语“和/或”仅仅是一种描述关联对象的关联关系,表示可以存在三种关系,例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B这三种情况。另外,本文中字符“/”,一般表示前后关联对象是一种“或”的关系。It should be understood that the term "and/or" used herein is only an association relationship describing associated objects, which means that there may be three relationships, for example, A and/or B, which may mean that A exists alone, and A and B exist simultaneously. B, there are three situations of B alone. In addition, the character "/" in this article generally indicates that the contextual objects are an "or" relationship.
需要注意的是,本申请实施例所描述的“上”、“下”、“左”、“右”等方位词是以附图所示的角度来进行描述的,不应理解为对本申请实施例的限定。此外,在上下文中,还需要理解的是,当提到一个元件连接在另一个元件“上”或者“下”时,其不仅能够直接连接在另一个元件“上”或者“下”,也可以通过中间元件间接连接在另一个元件“上”或者“下”。It should be noted that the orientation words such as "up", "down", "left", and "right" described in the embodiments of the present application are described from the angles shown in the drawings, and should not be interpreted as limiting the implementation of the present application. Example limitations. Furthermore, in this context, it also needs to be understood that when it is mentioned that an element is connected "on" or "under" another element, it can not only be directly connected "on" or "under" another element, but can also To be indirectly connected "on" or "under" another element through an intervening element.
如图1所示,本申请实施例提供了一种陶瓷迁移管。该陶瓷迁移管包括迁移室3、电离室1、法拉第杯组件5、离子门组件2以及抑制栅4。As shown in FIG. 1 , the embodiment of the present application provides a ceramic transfer tube. The ceramic migration tube includes a
迁移室3用于提供均匀的弱漂移电场和电中性的逆向流场使迁移率,不同的离子群在迁移室3区得到分离。The
电离室1设置在迁移室3的一端,电离室1用于提供用于离化样品分子或者其它分子的电离能和离化空间。The
离子门组件2设置在电离室1与迁移室3之间,离子门组件2用于提供离子的加速电场/截止电场和迁移时钟信号。The
法拉第杯组件5设置在迁移室3的另一端,法拉第杯组件5用于探测离子并产生离子信号。经迁移室3分离的离子群先后到达法拉第杯组件,产生离子信号。The Faraday cup assembly 5 is arranged at the other end of the
抑制栅4设置在迁移室3与法拉第杯组件5之间,抑制栅4用于屏蔽离子门脉冲电压对法拉第杯组件信号的干扰。The
如图1、图4和图5所示,迁移室3包括多个环形绝缘陶瓷片31和多个环形金属电极片32。环形绝缘陶瓷片31与环形金属电极片32依次交替排列。相邻的环形绝缘陶瓷片31与环形金属电极片32密封焊接。具体地,多个环形绝缘陶瓷片31依次间隔排列,每两个环形绝缘陶瓷片31之间设置有一个环形金属电极片32,该环形金属电极片32与其相邻的两个环形绝缘陶瓷片31密封焊接在一起。As shown in FIG. 1 , FIG. 4 and FIG. 5 , the
迁移室3中的环形绝缘陶瓷片31与环形金属电极片32依次交替排列,相邻的环形绝缘陶瓷片31与环形金属电极片32密封焊接,安装方便,制造成本低;密封性能佳,连接可靠牢固,机械强度高,抗震性能强,提高了系统稳定性。迁移室3中的环形绝缘陶瓷片31导热系数较高,可缩短机器的冷启动时间。The ring-shaped insulating
相邻环形绝缘陶瓷片31与环形金属电极片32之间的密封焊接结构可根据需要具体设置。作为优选,环形绝缘陶瓷片31与环形金属电极片32可以通过焊料焊接固定。环形金属电极片32的膨胀系数可等于或者接近于环形绝缘陶瓷片31的膨胀系数。The sealing welding structure between the adjacent ring-shaped insulating
焊料可采用高熔点焊料,杜绝了非耐热材料和高温痕量挥发材料的使用,因此迁移管可工作在250℃及以上温度,可更有效的应对毒品、爆炸物等高沸点违禁物品的检测,并能提高系统的清洁速度。The solder can use high-melting-point solder, which eliminates the use of non-heat-resistant materials and high-temperature trace volatile materials. Therefore, the transfer tube can work at a temperature of 250°C and above, which can more effectively deal with the detection of high-boiling-point prohibited items such as drugs and explosives. , and can improve the cleaning speed of the system.
环形绝缘陶瓷片31、环形金属电极片32及焊料的材料及厚度具体选用应考虑其可焊接性和焊接稳定性。The material and thickness of the annular insulating
更优选地,如图4所示,环形绝缘陶瓷片31采用95瓷或者99瓷。环形绝缘陶瓷片31具体可设置厚度为1mm-3mm。More preferably, as shown in FIG. 4 , the annular insulating
如图5所示,环形金属电极片32可采用可伐合金。可伐合金与环形绝缘陶瓷片31的膨胀系数相接近。可伐合金的厚度可设置为1mm-3mm。例如,环形金属电极片32可采用4J33可伐合金。As shown in FIG. 5 , Kovar alloy can be used for the annular
焊料可采用银铜合金。铜银合金熔点高,允许迁移管可工作在较高温度,可更有效的应对毒品、爆炸物等高沸点违禁物品的检测,并能提高系统的清洁速度。具体地,焊料采用72:8银铜合金,银、铜比例为72:8,其固相线为779℃,熔点为810℃。The solder can be silver-copper alloy. The copper-silver alloy has a high melting point, which allows the transfer tube to work at a higher temperature, which can more effectively deal with the detection of high-boiling prohibited items such as drugs and explosives, and can improve the cleaning speed of the system. Specifically, the solder is 72:8 silver-copper alloy, the ratio of silver to copper is 72:8, its solidus is 779°C, and its melting point is 810°C.
电离室的具体结构可根据需要设置,其能提供用于离化样品分子或者其它分子的电离能和离化空间即可。作为优选,如图2所示,电离室13包括电离源和源座11。源座11用于安装和固定电离源13,其具体结构可根据电离源13的具体结构来设置。电离源13可采用放射源如63Ni、3H也可以使用非放射源如UV、DBD(介质阻挡放电)及电晕放电电离源等。The specific structure of the ionization chamber can be set as required, as long as it can provide ionization energy and ionization space for ionizing sample molecules or other molecules. Preferably, as shown in FIG. 2 , the
具体地,如图2所示,电离室1可包括源座11、C形弹片12和片状电离源13。源座11为环形结构,其上贯通设置有中空孔111。C形弹片12具有弹性,其受力时能发生弹性变形。C形弹片12过盈配合固定在中空孔111中。C形弹片12可向其径向内侧发生弹性变形,并与源座11中空孔111内壁相抵。片状电离源13可采用溅射方式或者蒸镀方式或者其他方式沉积在C形弹片12内壁上。Specifically, as shown in FIG. 2 , the
在中空孔111内壁上可突出设置有限位凸台112,用于轴向顶挡C形弹片12。将C形弹片12放置于源座11中空孔111内时,限位凸台112可顶挡C形弹片12,以阻止C形弹片12继续插入并提示C形弹片12及片状电离源13安装到位限制及提示放射源安装到位。A limiting
在中空孔111的径向一侧可设置有夹取凹槽113,夹取凹槽113与中空孔111相连通,可用于夹取安装或者拆卸C形弹片12。A clamping
更具体地,片状电离源13可采用63Ni源。C形弹片12对应设置为C形镍基弹片。63Ni源的片状电离源13可蒸镀在C形镍基弹片内壁上。More specifically, the
离子门组件的具体结构可根据需要设置,其能提供离子的加速电场/截止电场和迁移时钟信号即可。作为优选,如图2所示,离子门组件2可包括第一离子门栅21、陶瓷隔离片22和第二离子门栅23。陶瓷隔离片22设置在第一离子门栅21与第二离子门栅23之间,用于使第一离子门栅21与第二离子门栅23间隔设定距离。陶瓷隔离片22与第一离子门栅21及第二离子门栅23之间密封焊接,可防止熔融焊料溅散/溢出降低离子门间的绝缘性。更优选地,陶瓷隔离片22不超过0.7mm,用于隔离第一离子门栅21与第二离子门栅23。对应地,第一离子门栅21与第二离子门栅23间隔距离不超过0.7mm。The specific structure of the ion gate assembly can be set according to needs, and it only needs to provide the acceleration electric field/cutoff electric field and the migration clock signal of ions. Preferably, as shown in FIG. 2 , the
法拉第杯组件的具体结构可根据需要设置,其能实现探测离子并产生离子信号功能即可。作为优选,如图6所示,法拉第杯组件5可包括法拉第杯51和陶瓷屏蔽罩52。法拉第杯51通过连接杆与陶瓷屏蔽罩52密封焊接。例如图1所示,陶瓷屏蔽罩52可套装在法拉第杯51的连接杆上。法拉第杯51表面抛光并镀金,以减小探测器噪声。陶瓷屏蔽罩52外圈金属化处理,焊接后与抑制栅4等电位,用于屏蔽外界信号对法拉第杯51信号的干扰。The specific structure of the Faraday cup assembly can be set as required, as long as it can realize the functions of detecting ions and generating ion signals. Preferably, as shown in FIG. 6 , the Faraday cup assembly 5 may include a
法拉第杯51与陶瓷屏蔽罩52密封焊接。例如,法拉第杯51与与屏蔽罩的封接方式为可在连接法拉第杯51的连杆上嵌套内外圈金属化的环形陶瓷屏蔽罩52,并可采用双层套封方式封接。The
抑制栅的具体结构可根据需要设置,其能屏蔽离子门脉冲电压对法拉第杯51信号的干扰即可。作为优选,抑制栅4可设置为片状栅网结构,片状栅网结构具体可设置为六边形、圆形等。The specific structure of the suppression grid can be set according to needs, and it only needs to shield the interference of the ion gate pulse voltage on the signal of the
根据同一发明构思,本申请还提供了一种陶瓷迁移管制作方法。如图1所示,该陶瓷迁移管制作方法包括:According to the same inventive concept, the present application also provides a method for manufacturing a ceramic transfer tube. As shown in Figure 1, the manufacturing method of the ceramic transfer tube comprises:
首先,提供待焊陶瓷迁移管预制件。该待焊陶瓷迁移管预制件包括多个环形绝缘陶瓷片31和多个环形金属电极片32,环形绝缘陶瓷片31与环形金属电极片32依次交替排列,相邻环形绝缘陶瓷片31与环形金属电极片32之间设置有焊料。Firstly, a ceramic transfer tube preform to be welded is provided. The ceramic migration tube preform to be welded includes a plurality of annular insulating
然后,将待焊陶瓷迁移管预制件放置于氢钎焊炉中,在氢气保护氛围下以第一预设升温速率将氢钎焊炉升温至第一预设温度,并保温第一预设时间段,以确保焊件温度均匀。其中第一预设温度小于焊料的熔点。Then, the ceramic transfer tube preform to be welded is placed in a hydrogen brazing furnace, and the hydrogen brazing furnace is heated to a first preset temperature at a first preset heating rate under a hydrogen protective atmosphere, and kept warm for a first preset time section to ensure uniform temperature of the weldment. Wherein the first preset temperature is lower than the melting point of the solder.
之后,以第二预设升温速率将氢钎焊炉升温至第二预设温度,并保温第二预设时间段,以确保各焊缝焊料熔融充分、焊接界面浸润良好。其中第二预设温度大于或者等于焊料的熔点,第二预设升温速率小于第一预设升温速率;Afterwards, the hydrogen brazing furnace is heated up to a second preset temperature at a second preset temperature rise rate, and kept warm for a second preset time period, so as to ensure that the solder of each weld seam is fully melted and the welding interface is well infiltrated. Wherein the second preset temperature is greater than or equal to the melting point of the solder, and the second preset temperature rise rate is less than the first preset temperature rise rate;
之后,以第三预设降温速率将氢钎焊炉降温至第三预设温度,以缓慢释放环形绝缘陶瓷片31与环形金属电极片32之间焊缝的封接应力,防止陶瓷炸裂。Afterwards, the hydrogen brazing furnace is cooled to a third preset temperature at a third preset cooling rate, so as to slowly release the sealing stress of the weld between the annular insulating
之后,将氢钎焊炉降温至第四预设温度,并停止氢钎焊炉中的氢气供给。Afterwards, the temperature of the hydrogen brazing furnace is lowered to a fourth preset temperature, and the supply of hydrogen in the hydrogen brazing furnace is stopped.
本实施例中的迁移室3中的环形绝缘陶瓷片31与环形金属电极片32依次交替排列,相邻的环形绝缘陶瓷片31与环形金属电极片32通过焊料密封焊接,一体成型,安装方便,制造成本低;密封性能佳,连接可靠牢固,机械强度高,抗震性能强,提高了系统稳定性。迁移室3中的环形绝缘陶瓷片31导热系数较高,可缩短机器的冷启动时间。The ring-shaped insulating
焊料可采用高熔点焊料,杜绝了非耐热材料和高温痕量挥发材料的使用,因此迁移管可工作在250℃及以上温度,可更有效的应对毒品、爆炸物等高沸点违禁物品的检测,并能提高系统的清洁速度。The solder can use high-melting-point solder, which eliminates the use of non-heat-resistant materials and high-temperature trace volatile materials. Therefore, the transfer tube can work at a temperature of 250°C and above, which can more effectively deal with the detection of high-boiling-point prohibited items such as drugs and explosives. , and can improve the cleaning speed of the system.
为使环形绝缘陶瓷片31与环形金属电极片32能更好地密封焊接在一起,作为优选,焊接前,待焊陶瓷迁移管预制件中的环形绝缘陶瓷片31表面金属化并烧氢处理,待焊陶瓷迁移管预制件中的环形金属电极片32表面经清洗镀镍并烧氢处理。如此,环形绝缘陶瓷片31与环形金属电极片32易通过焊料焊接在一起。In order to enable the annular insulating
为实现焊接稳定性,该陶瓷迁移管制作方法还可以提供有装架工具。装架工具将待焊陶瓷迁移管预制件中的多个环形绝缘陶瓷片31和多个环形金属电极片32同轴固定。具体地,在环形绝缘陶瓷片31与环形金属电极片32之间放入合适宽度及厚度焊料,并用装架工具定位,确保装架过程中环形绝缘陶瓷片31与环形金属电极片32同轴后紧固。In order to achieve welding stability, the manufacturing method of the ceramic transfer tube can also provide a mounting tool. The mounting tool coaxially fixes multiple annular insulating
作为优选,焊料可采用银铜合金。例如焊料具体可采用72:8银铜合金,银、铜比例为72:8,其固相线为779℃,熔点为810℃。Preferably, silver-copper alloy can be used as solder. For example, the solder can be specifically 72:8 silver-copper alloy, the ratio of silver to copper is 72:8, its solidus is 779°C, and its melting point is 810°C.
第一预设升温速率可等于或者小于20℃/min。第一预设温度可设置为780℃。第一预设时间段可设置为20min。The first preset heating rate may be equal to or less than 20° C./min. The first preset temperature can be set to 780°C. The first preset time period can be set to 20 minutes.
第二预设升温速率可设置为1-4℃/min。第二预设温度可设置为熔点温度810℃。第二预设时间段可设置为1min。The second preset heating rate can be set to 1-4°C/min. The second preset temperature can be set as the melting point temperature of 810°C. The second preset time period can be set to 1 min.
第三预设降温速率可等于或者小于30℃/min。第三预设温度为500℃。The third preset cooling rate may be equal to or less than 30° C./min. The third preset temperature is 500°C.
氢钎焊炉可自然降温至第四预设温度。第四预设温度可等于或者小于200℃。The hydrogen brazing furnace can naturally cool down to the fourth preset temperature. The fourth preset temperature may be equal to or less than 200°C.
作为优选,在将氢钎焊炉降温至第四预设温度,并停止氢钎焊炉中的氢气供给之后,可对获得的陶瓷迁移管进行耐压及气密性检测。若管体泄漏率不高于1.5×10-8Pa·m3/s,极间耐压值优于5×105V/cm,则满足迁移谱仪设备泄露和耐压要求。Preferably, after cooling down the hydrogen brazing furnace to the fourth preset temperature and stopping the supply of hydrogen in the hydrogen brazing furnace, the obtained ceramic transfer tube can be tested for pressure resistance and air tightness. If the leakage rate of the tube body is not higher than 1.5×10 -8 Pa·m3/s, and the withstand voltage value between electrodes is better than 5×10 5 V/cm, then the leakage and withstand voltage requirements of the mobility spectrometer equipment are met.
以上仅为本申请的优选实施例而已,并不用于限制本申请,对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。The above are only preferred embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, there may be various modifications and changes in the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this application shall be included within the protection scope of this application.
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