CN112797424A - Method for treating semiconductor TiN process waste gas - Google Patents
Method for treating semiconductor TiN process waste gas Download PDFInfo
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- CN112797424A CN112797424A CN202011540719.6A CN202011540719A CN112797424A CN 112797424 A CN112797424 A CN 112797424A CN 202011540719 A CN202011540719 A CN 202011540719A CN 112797424 A CN112797424 A CN 112797424A
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000002912 waste gas Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 91
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 55
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000005507 spraying Methods 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- 238000002485 combustion reaction Methods 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000012423 maintenance Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012851 eutrophication Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
- F23G7/06—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
- F23G7/061—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases with supplementary heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23K—FEEDING FUEL TO COMBUSTION APPARATUS
- F23K5/00—Feeding or distributing other fuel to combustion apparatus
- F23K5/002—Gaseous fuel
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G2201/00—Pretreatment
- F23G2201/90—Cooling
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G2209/00—Specific waste
- F23G2209/14—Gaseous waste or fumes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Treating Waste Gases (AREA)
Abstract
The invention provides a method for treating waste gas of a semiconductor TiN process, which relates to the field of semiconductor processing and waste gas treatment, and comprises the following steps: adjusting the temperature of the heating belt of the pipeline and the temperature of hot nitrogen according to the gas temperature value at the outlet of the waste gas pipeline; controlling an electromagnetic valve of a water spraying system according to the opening and closing conditions of a titanium tetrachloride control valve; and controlling the ammonia valve to be opened so as to enable the ammonia to enter the combustion chamber for combustion treatment. Detecting a gas temperature value at an outlet of the waste gas pipeline, and adjusting the temperature of the pipeline heating belt and the temperature of hot nitrogen according to the gas temperature value to enable the gas temperature value at the outlet of the waste gas pipeline to be within a preset temperature range; through washing away the waste gas pipeline export with the water, can directly wash away the reaction resultant to the water tank of waste gas treatment equipment bottom, prevent that the reaction resultant from blockking up the waste gas pipeline export, prolong the maintenance cycle of equipment, improve the operating efficiency of production line.
Description
Technical Field
The invention relates to the field of semiconductor processing and waste gas treatment, in particular to a method for treating waste gas of a semiconductor TiN process.
Background
The titanium nitride process in the semiconductor PVD process is a process which is used as a metal barrier layer of Al, Cu and W, can block the mutual diffusion between upper and lower layer materials, and enhances the stability and reliability. The titanium nitride process is divided into an organic process and an inorganic process according to gases participating in the reaction, and the inorganic titanium nitride process comprises titanium tetrachloride and ammonia gas as gas sources. The process waste gas related to the inorganic titanium nitride process is toxic and harmful gas, has serious harm to human bodies and environment, and can be discharged only after being treated.
The process waste gas of the existing process machine is pumped to the waste gas treatment equipment through a vacuum pump for treatment, the pipeline of the waste gas treatment equipment is wrapped with a heating belt (with the set temperature of 150 ℃), and hot nitrogen in the pipeline is heated through the heating belt. However, this treatment process has the following problems:
1) titanium tetrachloride is liquid at normal temperature and can become gaseous state under the condition of being higher than 136 ℃, and when the temperature of the pipeline heating belt is 150 ℃, heat loss is caused due to the wrapping property of the heating belt and the influence of the heat conduction performance of the material, and the temperature of the gas in the pipeline after actual heating can not reach 136 ℃. Although the temperature of the gas in the pipeline can be raised to above 136 ℃ by raising the set temperature of the heating belt, the temperature of the gas at the outlet of the waste gas pipeline may still be lower than 136 ℃ after the gas passes through the pipeline with a certain length; the method is influenced by equipment layout and pipeline arrangement, so that the method is difficult to control in practical application.
2) In the using process of the existing equipment, the reaction product of titanium tetrachloride and water easily blocks the outlet of a waste gas pipeline, and the equipment needs to be maintained after working for 1 to 3 days, thus the operation and the capacity improvement of a semiconductor production line are seriously influenced.
Disclosure of Invention
The invention provides a method for treating waste gas of a semiconductor TiN process, which is used for solving the problems that the temperature of pipeline gas is difficult to reach a preset temperature and the maintenance period of equipment is short in the prior art.
The invention provides a method for treating semiconductor TiN process waste gas, which comprises the following steps:
adjusting the temperature of the heating belt of the pipeline and the temperature of hot nitrogen according to the gas temperature value at the outlet of the waste gas pipeline;
controlling an electromagnetic valve of a water spraying system according to the opening and closing conditions of a titanium tetrachloride control valve;
and controlling the ammonia valve to be opened so as to enable the ammonia to enter the combustion chamber for combustion treatment.
According to the invention, the method for treating the semiconductor TiN process waste gas comprises the following steps of:
detecting the gas temperature value at the outlet of the waste gas pipeline;
and adjusting the temperature of the pipeline heating belt and the temperature of the hot nitrogen according to the gas temperature value so as to enable the gas temperature value at the outlet of the waste gas pipeline to be within a preset temperature range.
According to the invention, the predetermined temperature range is 136-200 ℃.
According to the invention, the method for treating the waste gas of the semiconductor TiN process is provided, and the control of the electromagnetic valve of the water spraying system according to the opening and closing conditions of the titanium tetrachloride control valve comprises the following steps:
if the titanium tetrachloride control valve is detected to be opened, controlling an electromagnetic valve of the water spraying system to be opened to spray water to an outlet of the waste gas pipeline;
and if the titanium tetrachloride control valve is detected to be in a closed state, the electromagnetic valve of the water spraying system is not controlled to be opened.
According to the invention, the method for treating the waste gas of the semiconductor TiN process is provided, and the control of the electromagnetic valve of the water spraying system according to the opening and closing conditions of the titanium tetrachloride control valve further comprises the following steps:
and if the titanium tetrachloride control valve is detected to be switched from the open state to the closed state, controlling the electromagnetic valve of the water spraying system to be closed after delaying for preset time.
According to the present invention, there is provided a method for treating an exhaust gas of a semiconductor TiN process, wherein the predetermined time is more than 1 s.
According to the invention, an interlayer is arranged on the periphery of the outlet of the waste gas pipeline, and the hot nitrogen heats the outlet of the waste gas pipeline in a heat conduction mode in the interlayer.
The method for treating the semiconductor TiN process waste gas detects the gas temperature value at the outlet of the waste gas pipeline, and adjusts the temperature of the pipeline heating belt and the temperature of the hot nitrogen according to the gas temperature value, so that the gas temperature value at the outlet of the waste gas pipeline is in a preset temperature range, and the gas is prevented from being liquefied due to too low temperature, and further the reaction is prevented from being influenced; through washing away the waste gas pipeline export with the water, can directly wash away the reaction resultant to the water tank of waste gas treatment equipment bottom, prevent that the reaction resultant from blockking up the waste gas pipeline export, prolong the maintenance cycle of equipment, improve the operating efficiency of production line.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic side sectional view of a water injection system and an exhaust line outlet of an exhaust treatment device provided by the present invention;
FIG. 2 is a schematic perspective view of a water injection system and an exhaust line outlet of an exhaust treatment device provided by the present invention;
fig. 3 is a schematic flow diagram of a method for treating semiconductor TiN process exhaust gas provided by the present invention.
Reference numerals:
100. a water injection system; 200. an interlayer; 300. an exhaust gas line outlet; 400. a hot nitrogen inlet.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the embodiments of the present invention and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be noted that, unless explicitly stated or limited otherwise, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. Specific meanings of the above terms in the embodiments of the present invention can be understood in specific cases by those of ordinary skill in the art.
In embodiments of the invention, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of an embodiment of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
The method for treating the exhaust gas of the semiconductor TiN process according to the present invention will be described with reference to fig. 1 to 3.
Fig. 1 illustrates a schematic side view cross-sectional structure of a water injection system and an outlet of an exhaust gas pipeline of an exhaust gas treatment device, and fig. 2 illustrates a schematic three-dimensional structure of the water injection system and the outlet of the exhaust gas pipeline of the exhaust gas treatment device, as shown in fig. 1 and 2, the method for treating the semiconductor TiN process exhaust gas of the present invention is based on the exhaust gas treatment device for treatment, and the outlet 300 of the exhaust gas pipeline of the exhaust gas treatment device is communicated with an exhaust gas collection device of a process machine through a gas pipeline. A temperature sensor is disposed on a side wall of the exhaust gas pipe outlet 300, and the temperature sensor is used for detecting a gas temperature value of the exhaust gas pipe outlet 300. The waste gas treatment equipment is provided with a water spraying system 100, the water spraying system 100 comprises a spray head, an electromagnetic valve and water supply equipment, the spray head is arranged on the upper portion of the waste gas pipeline outlet 300 and used for spraying water to the waste gas pipeline outlet 300, the water supply equipment is communicated with the spray head through a water pipeline, and the electromagnetic valve is arranged on the water pipeline and used for controlling the on and off of the water pipeline. The periphery of exhaust gas pipeline export 300 is provided with intermediate layer 200, and intermediate layer 200 is hollow structure, and intermediate layer 200 separates exhaust gas pipeline export 300 with the outside cold air, reduces the outside cold air and causes the influence to exhaust gas pipeline export 300 of high temperature. The interlayer 200 is communicated with a hot nitrogen gas inlet 400, and hot nitrogen gas is introduced into the interlayer 200 through the hot nitrogen gas inlet 400.
Fig. 3 illustrates a schematic flow diagram of a method for treating a semiconductor TiN process exhaust, as shown in fig. 3, the method for treating a semiconductor TiN process exhaust comprising the steps of:
step S1, adjusting the temperature of the pipeline heating belt and the temperature of the hot nitrogen according to the gas temperature value at the outlet of the waste gas pipeline;
although the temperature of the heating belt of the gas transmission pipeline is 150 ℃, the temperature of the gas transmission pipeline after actual heating is far from 136 ℃ due to heat loss caused by the wrapping property of the heating belt and the influence of the heat conducting property of the material. It is critical to ensure that the temperature of the gas at the exhaust line outlet 300 is above 136 c to ensure that the titanium tetrachloride does not liquefy. This embodiment is through detecting the gas temperature value to exhaust gas pipeline export 300 to adjust the temperature of pipeline heating band and the temperature of hot nitrogen gas according to the gas temperature value, make exhaust gas pipeline export 300's gas temperature value be in predetermined temperature range, prevent that gas from crossing low and liquefying because of the temperature, and then the going on of influence reaction. The predetermined temperature range in this example is 136 deg.C-200 deg.C.
Step S2, controlling an electromagnetic valve of the water spraying system according to the opening and closing conditions of the titanium tetrachloride control valve;
when treating the exhaust gas, water only needs to react with the titanium tetrachloride, so the solenoid valve needs to be opened only when the titanium tetrachloride control valve is opened. The purpose of spraying water to the waste gas pipeline outlet 300 is two, one purpose is to enable the water to react with titanium tetrachloride, the other purpose is to flush the waste gas pipeline outlet 300 by using the water, and reaction products can be directly flushed into a water tank at the bottom of waste gas treatment equipment, so that the waste gas pipeline outlet 300 is prevented from being blocked by the reaction products, the maintenance period of the equipment is prolonged, and the operation efficiency of a production line is improved.
And step S3, controlling the ammonia gas valve to be opened so that the ammonia gas enters the combustion chamber to be subjected to combustion treatment.
When the ammonia valve is detected to be opened, the ammonia gas does not need to react with water, so that an electromagnetic valve of the water spraying system 100 does not need to be controlled to be opened, and the ammonia gas enters the combustion chamber to be subjected to combustion treatment and reacts according to the following formula (1) to generate nitrogen and water.
4NH3+3O2＝2N2+6H2O (1)
According to an embodiment of the present invention, the method for treating the semiconductor TiN process exhaust gas in the present embodiment comprises the steps of:
step S4, detecting the gas temperature value at the outlet of the waste gas pipeline;
the purpose of detecting the gas temperature at the exhaust gas pipeline outlet 300 by using the temperature sensor is two, one purpose is to provide a basis for adjusting the temperature of the pipeline heating belt and the temperature of the hot nitrogen; another object is to enable the control means to monitor the gas temperature value at the exhaust line outlet 300 in real time.
Step S5, adjusting the temperature of the pipeline heating belt and the temperature of the hot nitrogen according to the gas temperature value, so that the gas temperature value at the outlet of the waste gas pipeline is in a preset temperature range;
after the gas temperature value of the exhaust gas pipeline outlet 300 is obtained, the temperature of the pipeline heating zone and the temperature of the hot nitrogen are adjusted, and when the gas temperature value is lower than a preset temperature range, the temperature of the pipeline heating zone and the temperature of the hot nitrogen are too low, so that the temperature of the pipeline heating zone and the temperature of the hot nitrogen need to be increased, and the titanium tetrachloride liquefaction is prevented from influencing the reaction. When the gas temperature value is higher than the preset temperature range, the temperature of the pipeline heating belt and the temperature of the hot nitrogen are overhigh, so that the temperature of the pipeline heating belt and the temperature of the hot nitrogen need to be reduced, and energy waste caused by overhigh temperature is prevented. Through a plurality of experiments, the temperature of the pipeline heating belt is set to be 180 ℃, so that the gas temperature value of the exhaust gas pipeline outlet 300 can meet the requirements of being more than 136 ℃ and less than 200 ℃. The gas temperature value of exhaust gas pipeline export 300 can also be changed to the temperature of adjusting hot nitrogen gas, and hot nitrogen gas gets into the intermediate layer 200 through hot nitrogen gas entry 400, and hot nitrogen gas heats exhaust gas pipeline export 300 through heat-conduction's mode, through the temperature value of adjusting hot nitrogen gas, the same adjustable gas temperature value. The temperature of the pipeline heating belt and the temperature of the hot nitrogen are adjusted according to the gas temperature value, so that the gas temperature value of the exhaust gas pipeline outlet 300 can be accurately controlled.
Step S6, controlling an electromagnetic valve of the water spraying system according to the opening and closing conditions of the titanium tetrachloride control valve;
and step S7, controlling the ammonia gas valve to be opened so that the ammonia gas enters the combustion chamber to be subjected to combustion treatment.
According to an embodiment of the present invention, the method for treating the semiconductor TiN process exhaust gas in the present embodiment comprises the steps of:
step S8, detecting the gas temperature value at the outlet of the waste gas pipeline;
step S9, adjusting the temperature of the pipeline heating belt and the temperature of the hot nitrogen according to the gas temperature value, so that the gas temperature value at the outlet of the waste gas pipeline is in a preset temperature range;
step S10, if the titanium tetrachloride control valve is detected to be opened, the electromagnetic valve of the water spraying system is controlled to be opened to spray water to the outlet of the waste gas pipeline;
when the titanium tetrachloride control valve is opened, the titanium tetrachloride control valve sends a feedback signal to the control device, the control device detects that the titanium tetrachloride control valve is opened and controls the electromagnetic valve of the water spraying system 100 to be opened to spray water to the waste gas pipeline outlet 300, and because a period of time is required for the titanium tetrachloride to reach the waste gas pipeline outlet 300 from the titanium tetrachloride control valve, when the water spraying system 100 starts spraying water, the titanium tetrachloride does not reach the waste gas pipeline outlet 300, so that the titanium tetrachloride can be prevented from overflowing to cause environmental pollution. When titanium tetrachloride reaches the exhaust gas line outlet 300, the titanium tetrachloride reacts with water according to the following formula (2) to produce titanium oxide and hydrogen chloride;
TiCl4+2H20＝TiO2+4HCl (2)
because the water washes the product, the reaction product can be prevented from blocking the waste gas pipeline outlet 300, the maintenance period of the equipment is prolonged, and the operation efficiency of the production line is improved. The maintenance period of the equipment can be prolonged from 1 to 3 days to 30 days by using the method according to actual field tests.
Step S11, if the titanium tetrachloride control valve is detected to be in a closed state, the electromagnetic valve of the water spraying system is not controlled to be opened;
if the titanium tetrachloride control valve is detected to be in a closed state, the electromagnetic valve of the water spraying system 100 is not controlled to be opened, because ammonia is dissolved in water to form ammonia water if the electromagnetic valve is opened at the moment, and the ammonia water is discharged to easily cause eutrophication of water, the ammonia gas needs to be combusted to form nitrogen and water for discharge.
And step S12, controlling the ammonia gas valve to be opened so that the ammonia gas enters the combustion chamber to be subjected to combustion treatment.
In one embodiment, the controlling the solenoid valve of the water injection system according to the opening and closing of the titanium tetrachloride control valve further comprises:
and if the titanium tetrachloride control valve is detected to be switched from the open state to the closed state, controlling the electromagnetic valve of the water injection system 100 to be closed after delaying for preset time. In this embodiment, the predetermined time is greater than 1s, and the specific value of the predetermined time can be calculated according to the pumping speed of the vacuum pump and the volume of the pipeline from the process chamber to the gas inlet. After the titanium tetrachloride control valve is closed, the titanium tetrachloride remained in the pipeline still can overflow from the outlet 300 of the waste gas pipeline, so that the electromagnetic valve of the water spraying system 100 is closed in a delayed mode, the titanium tetrachloride remained in the pipeline can be completely reacted by water, and the titanium tetrachloride is prevented from overflowing to cause environmental pollution.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A method for treating a semiconductor TiN process exhaust gas, comprising the steps of:
adjusting the temperature of the heating belt of the pipeline and the temperature of hot nitrogen according to the gas temperature value at the outlet of the waste gas pipeline;
controlling an electromagnetic valve of a water spraying system according to the opening and closing conditions of a titanium tetrachloride control valve;
and controlling the ammonia valve to be opened so as to enable the ammonia to enter the combustion chamber for combustion treatment.
2. The method of claim 1, wherein the adjusting the temperature of the line heating zone and the temperature of the hot nitrogen gas according to the gas temperature value at the outlet of the exhaust gas line comprises:
detecting the gas temperature value at the outlet of the waste gas pipeline;
and adjusting the temperature of the pipeline heating belt and the temperature of the hot nitrogen according to the gas temperature value so as to enable the gas temperature value at the outlet of the waste gas pipeline to be within a preset temperature range.
3. The method for treating exhaust gas of a semiconductor TiN process according to claim 2, wherein the predetermined temperature range is 136 ℃ -200 ℃.
4. The method for treating semiconductor TiN process exhaust gas according to any one of the claims 1 to 3, wherein the controlling the solenoid valve of the water injection system according to the opening and closing of the titanium tetrachloride control valve comprises:
if the titanium tetrachloride control valve is detected to be opened, controlling an electromagnetic valve of the water spraying system to be opened to spray water to an outlet of the waste gas pipeline;
and if the titanium tetrachloride control valve is detected to be in a closed state, the electromagnetic valve of the water spraying system is not controlled to be opened.
5. The method for treating semiconductor TiN process exhaust gas according to claim 4, wherein the controlling the solenoid valve of the water spray system according to the opening and closing of the titanium tetrachloride control valve further comprises:
and if the titanium tetrachloride control valve is detected to be switched from the open state to the closed state, controlling the electromagnetic valve of the water spraying system to be closed after delaying for preset time.
6. The method for treating semiconductor TiN process exhaust gas according to claim 5, wherein the predetermined time is greater than 1 s.
7. The method for treating semiconductor TiN process exhaust gas according to any one of claims 1 to 3, wherein the exhaust gas pipe outlet is provided with an interlayer on the periphery thereof, and the hot nitrogen gas heats the exhaust gas pipe outlet by means of heat conduction in the interlayer.
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