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CN112787307B - Chip output short circuit protection circuit - Google Patents

Chip output short circuit protection circuit Download PDF

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Publication number
CN112787307B
CN112787307B CN202110102453.5A CN202110102453A CN112787307B CN 112787307 B CN112787307 B CN 112787307B CN 202110102453 A CN202110102453 A CN 202110102453A CN 112787307 B CN112787307 B CN 112787307B
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China
Prior art keywords
inductor
circuit
transistor
detection module
capacitor
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CN202110102453.5A
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Chinese (zh)
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CN112787307A (en
Inventor
贺江平
王俊喜
孙晓良
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Shenzhen Siyuan Semiconductor Co ltd
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Shenzhen Siyuan Semiconductor Co ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/008Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for protective arrangements according to this subclass
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00304Overcurrent protection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00308Overvoltage protection

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Protection Of Static Devices (AREA)

Abstract

本发明提供了一种芯片输出短路保护电路,其包括驱动模块、第一晶体管、第一电容、第二电容、第一电感、第二电感、第三电感、第四电感、第五电感、第六电感、短路开关、二极管以及检测模块;检测模块用于检测二极管的负极端的电压是否为负值以触发所述驱动模块;其中,检测模块的第一端连接至驱动模块的输入端,检测模块的第二端分别连接至二极管的正极端和第五电感的第一端,检测模块的第三端连接至第一晶体管的源极。与相关技术相比,本发明的芯片输出短路保护的可靠性高。

The present invention provides a chip output short-circuit protection circuit, which includes a driving module, a first transistor, a first capacitor, a second capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a sixth inductor, a short-circuit switch, a diode and a detection module; the detection module is used to detect whether the voltage at the negative terminal of the diode is negative to trigger the driving module; wherein the first end of the detection module is connected to the input end of the driving module, the second end of the detection module is respectively connected to the positive terminal of the diode and the first end of the fifth inductor, and the third end of the detection module is connected to the source of the first transistor. Compared with the related art, the chip output short-circuit protection of the present invention has high reliability.

Description

Chip output short-circuit protection circuit
Technical Field
The invention relates to the technical field of circuits, in particular to a chip output short-circuit protection circuit applied to an overvoltage and overcurrent protection chip.
Background
Currently, mobile devices such as smartphones, wearable devices, electric tools, unmanned aerial vehicles and the like are increasingly used. Lithium ion battery powered applications in the mobile device are an important part of them. Because the lithium ion battery has stability problem, the overvoltage and overcurrent protection chip is applied as the front end of the lithium ion battery charger to protect the lithium ion battery and the charger. The overvoltage and overcurrent protection chip can realize various protection functions, such as overvoltage protection, load current limiting protection, output short circuit protection and the like of an input power supply and a lithium battery.
The charge and discharge current limits of the battery protection circuit of the related art are set to the same value, or the charge current and the discharge current are fixed by an internal circuit. As shown in fig. 1, fig. 1 is an application circuit diagram of an overvoltage and overcurrent protection chip of the related art. U1 is an overvoltage and overcurrent protection chip. U2 is the alternating current adaptation circuit of charging source, U3 is charging circuit, U4 is the back-stage system circuit, U5 is the lithium cell. S0 is an analog short-circuit switch, typically a power tube, inside the overvoltage and overcurrent protection chip U1.
However, when the overvoltage and overcurrent protection chip U1 operates normally, S0 is turned off, and the output voltage VOUT is approximately equal to the power supply voltage VIN input by the ac adapter circuit U2 of the charging power supply, as the power supply of the subsequent stage system circuit U4. If VOUT suddenly short-circuits to ground, the drain terminal of the power tube in the analog short-circuit switch S0 instantaneously receives a voltage far higher than VIN, and the source terminal of the power tube has negative pressure, at this time, the drain and source of the power tube will generate a very large voltage difference, and if the withstand voltage of the power tube is insufficient to withstand such a high voltage, the power tube will be damaged, so as to burn the overvoltage and overcurrent protection chip U1.
Therefore, it is necessary to provide a new circuit to solve the above problems.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a chip output short-circuit protection circuit with high reliability for chip output short-circuit protection.
In order to solve the technical problems, the invention provides a chip output short-circuit protection circuit which is applied to an overvoltage and overcurrent protection chip, wherein the chip output short-circuit protection circuit comprises a driving module, a first transistor, a first capacitor, a second capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a sixth inductor, a short-circuit switch, a diode and a detection module, wherein the first transistor is a power switch tube, the diode is an ESD device, the detection module is used for detecting whether the voltage of the negative electrode end of the diode is negative to trigger the driving module,
The output end of the driving module is connected to the grid electrode of the first transistor;
The drain electrode of the first transistor is respectively connected to the second end of the fourth inductor and the first end of the first capacitor, and the source electrode of the first transistor is respectively connected to the first end of the third inductor and the negative electrode end of the diode;
The first end of the fourth inductor is used as a power supply voltage input end of the chip output short-circuit protection circuit;
The second end of the third inductor is respectively connected to the first end of the second capacitor and the first end of the short-circuit switch, and is used as a power supply voltage output end of the chip output short-circuit protection circuit;
The positive terminal of the diode is connected to the first terminal of the fifth inductor;
the second end of the first capacitor is connected to the first end of the first inductor;
the second end of the second capacitor is connected to the first end of the second inductor;
A second end of the short-circuit switch is connected to a first end of the sixth inductor;
The second end of the first inductor, the second end of the second inductor, the second end of the sixth inductor and the second end of the fifth inductor are all connected to ground;
The first end of the detection module is connected to the input end of the driving module, the second end of the detection module is connected to the positive end of the diode and the first end of the fifth inductor respectively, and the third end of the detection module is connected to the source electrode of the first transistor.
Preferably, the detection module comprises an NPN triode and a logic module, wherein the logic module is used for controlling the driving module to drive the first transistor to be conducted when the detection module detects that the voltage of the negative end of the diode is a negative value, the collector electrode of the NPN triode is connected to the input end of the logic module, the base electrode of the NPN triode is used as the second end of the detection module, the emitter electrode of the NPN triode is used as the third end of the detection module, and the output end of the logic module is used as the first end of the detection module.
Preferably, the detection module is an NMOS transistor, a drain electrode of the NMOS transistor is used as a first end of the detection module, a gate electrode of the NMOS transistor is used as a second end of the detection module, and a source electrode of the NMOS transistor is used as a third end of the detection module.
Preferably, the chip output short-circuit protection circuit further comprises a third capacitor, wherein a first end of the third capacitor is connected to the output end of the driving module and the gate of the first transistor respectively, and a second end of the third capacitor is connected to the drain electrode of the first transistor, the second end of the fourth inductor and the first end of the first capacitor respectively.
Compared with the related art, the chip output short-circuit protection circuit comprises a driving module, a first transistor, a first capacitor, a second capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a sixth inductor, a short-circuit switch, a diode detection module and a logic module. The circuit detects whether the voltage of the negative electrode end of the diode is negative or not through the detection module, and judges that the detection module detects that the voltage of the negative electrode end of the diode is negative, the driving module is controlled to drive the first transistor to be conducted, and when the overvoltage overcurrent protection chip has a chip output short circuit condition, the detection module is enabled to control the driving module to trigger the diode (power switch tube) to be instantly started. The instantaneous opening of the power tube provides a release passage for the input and output current, so that the damage of the power switch tube is avoided, and meanwhile, the influence of the output short circuit on the front-stage adapter is reduced, so that the reliability of the chip output short circuit protection is high.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a circuit diagram of an application of a related art over-voltage and over-current protection chip;
FIG. 2 is a circuit diagram of a chip output short-circuit protection circuit according to the present invention;
FIG. 3 is a circuit diagram of a first embodiment of a chip output short-circuit protection circuit according to the present invention;
FIG. 4 is a circuit diagram of a second embodiment of a chip output short-circuit protection circuit according to the present invention;
fig. 5 is a circuit configuration diagram of a third embodiment of the chip output short-circuit protection circuit of the present invention.
Detailed Description
The following describes in detail the embodiments of the present invention with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the application and are intended to be illustrative and exemplary of the concepts of the application and are not to be construed as limiting the scope of the application. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification, including any obvious alterations and modifications to the embodiments described herein, all within the scope of the present application.
Referring to fig. 2, the present invention provides a chip output short-circuit protection circuit 100.
The chip output short-circuit protection circuit 100 is applied to an overvoltage and overcurrent protection chip. The overvoltage and overcurrent protection chip can realize various protection functions, such as overvoltage protection, load current limiting protection, output short circuit protection and the like of an input power supply and a lithium battery.
The chip output short-circuit protection circuit 100 includes a driving module DRI, a first transistor M1, a first capacitor C1, a second capacitor C2, a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a fifth inductor L5, a sixth inductor L6, a short-circuit switch K, a diode D, and a detection module TEST.
The circuit formed by the driving module DRI, the first transistor M1, the first capacitor C1, the second capacitor C2, the first inductor L1, the second inductor L2, the third inductor L3, the fourth inductor L4, the fifth inductor L5, the sixth inductor L6, the short-circuit switch K and the diode D is equivalent to a simplified circuit when the output power of the overvoltage and overcurrent protection chip is partially shorted. Of course, without being limited thereto, other equivalent short circuits may be substituted as well.
Wherein, the first transistor M1 is a power switch transistor. The diode D is an ESD device. The first inductor L1 is a parasitic inductor of an input capacitor of the overvoltage and overcurrent protection chip. The second inductor L2 is a parasitic inductor of the output capacitor of the overvoltage and overcurrent protection chip. The third inductor L3, the fourth inductor L4, and the fifth inductor L5 are parasitic inductors. And the sixth inductor L6 is a parasitic inductor of the conducting wire when the output of the overvoltage and overcurrent protection chip is short-circuited. The short-circuit switch K is a switch for simulating the short-circuit moment of output. The driving module DRI supplies a gate voltage to the first transistor M1.
The specific circuit structure of the equivalent simplified circuit when the output power part of the overvoltage and overcurrent protection chip is short-circuited is as follows:
the output of the drive module DRI is connected to the gate of the first transistor M1.
The drain electrode of the first transistor M1 is connected to the second end of the fourth inductor L4 and the first end of the first capacitor C1, and the source electrode of the first transistor M1 is connected to the first end of the third inductor L3 and the negative end of the diode D, respectively.
The first end of the fourth inductor L4 is used as the power voltage input end VIN of the chip output short-circuit protection circuit 100.
The second end of the third inductor L3 is connected to the first end of the second capacitor C2 and the first end of the short-circuit switch K, respectively, and is used as the power supply voltage output terminal VOUT of the chip output short-circuit protection circuit 100.
The positive terminal of the diode D is connected to the first terminal of the fifth inductance L5.
The second end of the first capacitor C1 is connected to the first end of the first inductor L1.
The second end of the second capacitor C2 is connected to the first end of the second inductor L2.
The second terminal of the shorting switch K is connected to the first terminal of the sixth inductor L6.
The second end of the first inductor L1, the second end of the second inductor L2, the second end of the sixth inductor L6, and the second end of the fifth inductor L5 are all connected to the ground GND.
When the output power of the overvoltage and overcurrent protection chip is partially short-circuited, the equivalent simplified circuit working process is as follows:
when the overvoltage and overcurrent protection chip works normally, the short-circuit switch K is disconnected, the first transistor M1 is completely opened, and the voltage of the power supply voltage output end VOUT is approximately equal to the voltage of the power supply voltage input end VIN and is used as a power supply of a rear-stage system. If the power supply voltage output end VOUT suddenly shorts to the ground, the shorting switch K suddenly closes, and the power supply voltage output end VOUT discharges the charge through the sixth inductor L6, and the output end will instantaneously generate a large current due to the small inductance value of the sixth inductor L6; the first transistor M1 is always turned on, the power supply voltage input terminal VIN forms a path with the ground GND through the fourth inductor L4, the first transistor M1, the third inductor L3 and the sixth inductor L6, the fourth inductor L4 also generates a large current, the instantaneous large current of the fourth inductor L4 causes the power supply voltage input terminal VIN to rapidly decrease due to insufficient current capacity and response time of the power supply, the voltage of the lower power supply voltage input terminal VIN triggers the overvoltage overcurrent protection logic inside the chip, so that the first transistor M1 is turned off, the external power supply and the first capacitor C1 provide a path of the freewheel current for the fourth inductor L4, the voltage of the power supply voltage input terminal VIN rapidly increases, the fourth inductor L4 and the first capacitor C1 generate LC oscillation, the voltage of the drain terminal of the first transistor M1 is far higher than the voltage of the power supply voltage input terminal VIN, the voltage of the output terminal D is far higher than the voltage of the power supply voltage input terminal VIN, and the voltage of the first transistor M1 is damaged due to the fact that the voltage of the first transistor M1 is damaged.
In this embodiment, the driving module DRI is an analog circuit. Of course, the drive module DRI is not limited to this, and a digital-analog hybrid circuit or a digital circuit is also possible.
In order to avoid burning out the overvoltage and overcurrent protection chip, the chip output short-circuit protection circuit 100 further includes a detection module TEST.
Specifically, the detection module TEST is configured to detect whether the voltage at the negative terminal of the diode D is negative to trigger the driving module DRI. When the detection module TEST determines that the voltage at the negative end of the diode D is detected to be a negative value, the driving module DRI is controlled to drive the first transistor M1 to be turned on.
The specific circuit structure of the protection circuit is as follows:
The first end of the detection module TEST is connected to the input end of the driving module DRI, the second end of the detection module TEST is connected to the positive end of the diode D and the first end of the fifth inductor L5, respectively, and the third end of the detection module TEST is connected to the source electrode of the first transistor M1.
The invention rapidly detects the voltage of the negative terminal of the diode D at the output end. When the voltage at the negative terminal of the diode D drops to a negative value, the detection module TEST triggers and drives the driving module DRI to turn on the first transistor M1 instantaneously. The instant on of the first transistor M1 provides a bleed path for the input/output current, avoiding damage to the first transistor M1, thereby suppressing the overshoot voltage of the supply voltage input terminal VIN at the instant of the first transistor M1 turning off.
The following specific configuration of the detection module TEST is used to explain the short-circuit protection principle of the chip output short-circuit protection circuit 100 according to the present invention.
Example one
Referring to fig. 3, a chip output short-circuit protection circuit 200 is provided in the first embodiment. The detection module TEST in the chip output short-circuit protection circuit 200 of the first embodiment includes an NPN triode Q and a logic module LOG.
The logic module LOG is configured to control the driving module DRI to drive the first transistor M1 to be turned on when determining that the voltage at the negative terminal of the diode D is detected to be a negative value.
In this embodiment, the logic module LOG is an analog circuit. Of course, the logic block LOG is not limited to this, and a digital-analog hybrid circuit or a digital circuit is also possible.
The specific circuit connection structure is that a collector electrode of an NPN triode Q is connected to an input end of the logic module LOG, a base electrode of the NPN triode Q is used as a second end of the detection module TEST, and an emitter electrode of the NPN triode Q is used as a third end of the detection module TEST. The output end of the logic module LOG is used as the first end of the detection module.
The short-circuit protection working procedure in the first embodiment is as follows:
When the power supply voltage output end VOUT suddenly short-circuits to the ground, the voltage of the power supply voltage output end VOUT drops rapidly, and the power supply voltage output end VOUT discharges charges through the sixth inductor L6. Since the first transistor M1 is completely turned on, the fourth inductor L4 and the sixth inductor L6 will generate an instantaneous large current. The instantaneous large current causes the voltage of the power supply voltage input terminal VIN to drop, and the drop of the voltage of the power supply voltage input terminal VIN triggers the logic circuit inside the overvoltage and overcurrent protection chip, so as to turn off the first transistor M1. After the first transistor M1 is turned off, the large current of the sixth inductor L6 is discharged through the diode D. When negative voltage appears at the negative terminal of the diode D, the NPN transistor Q will turn on. The turn-on of NPN transistor Q causes the logic block LOG to operate, and the first transistor M1 is turned on instantaneously. The instant on of the first transistor M1 provides a bleed path for the large currents of the fourth inductor L4 and the sixth inductor L6, thereby ensuring that the supply voltage input terminal VIN maintains a low overshoot voltage. When the voltage of the power voltage input terminal VIN drops to a certain value, the first transistor M1 will be turned off again. Therefore, a large voltage does not occur between the drain and the source of the first transistor M1, and overshoot of the power supply voltage input terminal VIN is suppressed. The circuit structure can greatly reduce the voltage between the drain and the source of the first transistor M1, improve the reliability of the overvoltage and overcurrent protection chip, and meanwhile, the change amplitude of the voltage of the power supply voltage input end VIN is small, and the influence on the front-stage adapter and other overvoltage and overcurrent protection chips is small.
Example two
Referring to fig. 4, a chip output short-circuit protection circuit 300 is provided in the second embodiment. The circuit of the chip output short-circuit protection circuit 300 in the second embodiment is substantially the same as that in the first embodiment. The difference between the two embodiments is that the detection module TEST is an NMOS tube M2. The NMOS transistor M2 detects whether the voltage of the negative terminal of the diode D is negative to directly trigger the driving module DRI. The NMOS transistor M2 can directly trigger the driving module DRI, and the logic module LOG is not required to be set in the first embodiment, so that the circuit is simpler.
The specific circuit connection structure is that the drain electrode of the NMOS tube M2 is used as the first end of the detection module TEST, the grid electrode of the NMOS tube M2 is used as the second end of the detection module TEST, and the source electrode of the NMOS tube M2 is used as the third end of the detection module TEST.
The short-circuit protection working procedure in the second embodiment is as follows:
The NMOS transistor M2 can quickly detect the voltage of the negative terminal of the diode D at the output end, similar to the NPN transistor Q of the first embodiment. When negative voltage appears at the negative terminal of the diode D, the NMOS tube M2 is turned on. The output end of the driving module DRI is in a high-resistance state due to the opening of the NMOS tube M2. In the process of quickly rising the voltage of the power supply voltage input end VIN, the gate-drain capacitance of the first transistor M1 is used for enabling the first transistor M1 to be instantly started, a discharging passage is provided for input and output currents, and therefore overshoot voltage of the power supply voltage input end VIN at the moment that the first transistor M1 is turned off is restrained, and therefore reliability of chip output short-circuit protection is high.
Example III
Referring to fig. 5, a third embodiment provides a chip output short-circuit protection circuit 400. The chip output short-circuit protection circuit 300 in the third embodiment is basically the same as that in the second embodiment. The difference between the two embodiments is that the chip output short-circuit protection circuit 400 in the third embodiment adds a third capacitor C3 on the basis of the second embodiment.
The first end of the third capacitor C3 is connected to the output end of the driving module DRI and the grid electrode of the first transistor M1 respectively, and the second end of the third capacitor C3 is connected to the drain electrode of the first transistor M1, the second end of the fourth inductor L4 and the first end of the first capacitor C1 respectively.
The third capacitor C3 is a capacitor with increased gate-drain capacitive coupling of the first transistor M1. The effect of the method is that in the process of rapidly rising the voltage of the power voltage input terminal VIN, the gate-drain capacitance of the first transistor M1 and the third capacitance C3 are combined to enable the first transistor M1 to be turned on instantaneously, and the gate-drain capacitance of the first transistor M1 is the gate-drain capacitance of a single transistor in the second embodiment, and the third capacitance C3 can enable the first transistor M1 to be turned on instantaneously at a higher speed. A bleed path is provided for the input and output currents to suppress the overshoot voltage of the supply voltage input terminal VIN at the turn-off instant of the first transistor M1, so that the reliability of the chip output short-circuit protection is high.
Compared with the related art, the chip output short-circuit protection circuit comprises a driving module, a first transistor, a first capacitor, a second capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a sixth inductor, a short-circuit switch, a diode detection module and a logic module. The circuit detects whether the voltage of the negative electrode end of the diode is negative or not through the detection module, and judges that the detection module detects that the voltage of the negative electrode end of the diode is negative, the driving module is controlled to drive the first transistor to be conducted, and when the overvoltage overcurrent protection chip has a chip output short circuit condition, the detection module is enabled to control the driving module to trigger the diode (power switch tube) to be instantly started. The instantaneous opening of the power tube provides a release passage for the input and output current, so that the damage of the power switch tube is avoided, and meanwhile, the influence of the output short circuit on the front-stage adapter is reduced, so that the reliability of the chip output short circuit protection is high.
It should be noted that the above embodiments described above with reference to the drawings are only for illustrating the present invention and not for limiting the scope of the present invention, and it should be understood by those skilled in the art that modifications or equivalent substitutions to the present invention are intended to be included in the scope of the present invention without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words occurring in the singular form include the plural form and vice versa. In addition, unless specifically stated, all or a portion of any embodiment may be used in combination with all or a portion of any other embodiment.

Claims (3)

1.一种芯片输出短路保护电路, 其应用于过压过流保护芯片,所述芯片输出短路保护电路包括驱动模块、第一晶体管、第一电容、第二电容、第一电感、第二电感、第三电感、第四电感、第五电感、第六电感、短路开关以及二极管;1. A chip output short-circuit protection circuit, which is applied to an overvoltage and overcurrent protection chip, the chip output short-circuit protection circuit comprising a driving module, a first transistor, a first capacitor, a second capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a sixth inductor, a short-circuit switch and a diode; 所述驱动模块的输出端连接至所述第一晶体管的栅极;The output end of the driving module is connected to the gate of the first transistor; 所述第一晶体管的漏极分别连接至所述第四电感的第二端和所述第一电容的第一端,所述第一晶体管的源极分别连接至所述第三电感的第一端以及所述二极管的负极端;The drain of the first transistor is respectively connected to the second end of the fourth inductor and the first end of the first capacitor, and the source of the first transistor is respectively connected to the first end of the third inductor and the negative terminal of the diode; 所述第四电感的第一端作为所述芯片输出短路保护电路的电源电压输入端;The first end of the fourth inductor serves as a power supply voltage input end of the chip output short-circuit protection circuit; 所述第三电感的第二端分别连接至所述第二电容的第一端和所述短路开关的第一端,并作为所述芯片输出短路保护电路的电源电压输出端;The second end of the third inductor is respectively connected to the first end of the second capacitor and the first end of the short-circuit switch, and serves as a power supply voltage output end of the chip output short-circuit protection circuit; 所述二极管的正极端连接至所述第五电感的第一端;The positive terminal of the diode is connected to the first terminal of the fifth inductor; 所述第一电容的第二端连接至所述第一电感的第一端;The second end of the first capacitor is connected to the first end of the first inductor; 所述第二电容的第二端连接至所述第二电感的第一端;The second end of the second capacitor is connected to the first end of the second inductor; 所述短路开关的第二端连接至所述第六电感的第一端;The second end of the short-circuit switch is connected to the first end of the sixth inductor; 所述第一电感的第二端、所述第二电感的第二端、所述第六电感的第二端以及所述第五电感的第二端均连接至接地;其中,所述第一晶体管为功率开关管,所述二极管为ESD器件;The second end of the first inductor, the second end of the second inductor, the second end of the sixth inductor and the second end of the fifth inductor are all connected to ground; wherein the first transistor is a power switch tube, and the diode is an ESD device; 其特征在于,所述芯片输出短路保护电路还包括检测模块, 所述检测模块用于检测所述二极管的负极端的电压是否为负值以触发所述驱动模块;It is characterized in that the chip output short-circuit protection circuit also includes a detection module, and the detection module is used to detect whether the voltage at the negative end of the diode is a negative value to trigger the driving module; 其中,所述检测模块的第一端连接至所述驱动模块的输入端,所述检测模块的第二端分别连接至所述二极管的正极端和所述第五电感的第一端,所述检测模块的第三端连接至所述第一晶体管的源极;Wherein, the first end of the detection module is connected to the input end of the driving module, the second end of the detection module is connected to the positive end of the diode and the first end of the fifth inductor respectively, and the third end of the detection module is connected to the source of the first transistor; 所述检测模块包括NPN三极管和逻辑模块,所述逻辑模块用于判断所述检测模块检测到所述二极管的负极端的电压为负值时,控制所述驱动模块驱动所述第一晶体管导通;其中,NPN三极管的集电极连接至所述逻辑模块的输入端,NPN三极管的基极作为所述检测模块的第二端,NPN三极管的发射极作为所述检测模块的第三端;所述逻辑模块的输出端作为所述检测模块的第一端。The detection module includes an NPN transistor and a logic module, and the logic module is used to control the driving module to drive the first transistor to turn on when the detection module detects that the voltage at the negative end of the diode is negative; wherein the collector of the NPN transistor is connected to the input end of the logic module, the base of the NPN transistor serves as the second end of the detection module, and the emitter of the NPN transistor serves as the third end of the detection module; and the output end of the logic module serves as the first end of the detection module. 2.根据权利要求1所述的芯片输出短路保护电路,其特征在于,所述检测模块为NMOS管,NMOS管的漏极作为所述检测模块的第一端,NMOS管的栅极作为所述检测模块的第二端,NMOS管的源极作为所述检测模块的第三端。2. The chip output short-circuit protection circuit according to claim 1 is characterized in that the detection module is an NMOS tube, the drain of the NMOS tube serves as the first end of the detection module, the gate of the NMOS tube serves as the second end of the detection module, and the source of the NMOS tube serves as the third end of the detection module. 3.根据权利要求1所述的芯片输出短路保护电路,其特征在于,所述芯片输出短路保护电路还包括第三电容,所述第三电容的第一端分别连接至所述驱动模块的输出端和所述第一晶体管的栅极;所述第三电容的第二端分别连接至所述第一晶体管的漏极、所述第四电感的第二端以及所述第一电容的第一端。3. The chip output short-circuit protection circuit according to claim 1 is characterized in that the chip output short-circuit protection circuit also includes a third capacitor, a first end of the third capacitor is respectively connected to the output end of the driving module and the gate of the first transistor; the second end of the third capacitor is respectively connected to the drain of the first transistor, the second end of the fourth inductor and the first end of the first capacitor.
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