CN112769033B - Back-integrated laser device and manufacturing method thereof - Google Patents
Back-integrated laser device and manufacturing method thereof Download PDFInfo
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- CN112769033B CN112769033B CN202011640236.3A CN202011640236A CN112769033B CN 112769033 B CN112769033 B CN 112769033B CN 202011640236 A CN202011640236 A CN 202011640236A CN 112769033 B CN112769033 B CN 112769033B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a back-integrated laser device, which comprises a substrate, a waveguide structure and an active laser device, wherein the waveguide structure and the active laser device are arranged in a substrate silicon dioxide layer; the active layer is covered on the upper part of the second metal electrode structure, the second metal electrode structure comprises an interconnection metal layer and an electrode metal layer, and the electrode metal layer is formed by splicing at least two parts. The invention also relates to a manufacturing method of the back-integrated laser, which comprises an SOI wafer manufacturing process and an epitaxial wafer manufacturing process. The manufacturing method of the back-integrated laser reduces the resistance of the device, improves the efficiency of the device, reduces defect recombination and improves the carrier injection efficiency of the device.
Description
Technical Field
The invention relates to the technical field of integrated lasers, in particular to a back integrated laser and a manufacturing method thereof.
Background
A back-integrated laser, such as a hetero-integrated III-V laser, is considered to be one solution for a light source on a silicon substrate. The integration method of the back-facing laser represented by CEA-Leti can be compatible with the original silicon optical front-back process. As with the traditional III-V laser, the performance of the heterogeneous integrated laser is limited by factors such as device series resistance, defect state non-radiative recombination, thermal effect and the like, so that the heterogeneous integrated laser is easy to output little, low in efficiency and high in energy consumption. How to realize an integrated laser with high efficiency and low consumption is always the focus of research.
In the prior art, the laser is bonded with the silicon optical device after the silicon optical device is manufactured, and finally the contact electrode is formed by patterning. It has the following drawbacks:
1. The performance of III-V lasers is greatly affected by thermal effects. In the integrated structure, the silicon dioxide layer is limited between the laser and the carrier wafer, the heat dissipation of the laser is limited, and the increase of the threshold current and the reduction of the output power of the laser are easily caused;
2. in the integrated laser structure, the semiconductor layer is thinner (about 100 nm) and the lateral length is longer (about 10 μm), which becomes a main source of resistance in the device. Higher resistance is easy to generate more joule heat, which is unfavorable for the performance improvement of the device;
3. the manufacture of the related electrode relates to the etching of the active region, defects are easily introduced into the etching end face of the active region, non-radiative recombination is caused in the carrier injection process, and the current injection efficiency is reduced.
It is therefore desirable to provide an efficient, low-cost method of manufacturing integrated laser devices that faces away from the substrate.
Disclosure of Invention
The invention aims to provide a manufacturing method of a back-integrated laser device, which can relieve the limit of thermal budget of a bonding process, reduce contact resistance to a certain extent and reduce the complexity of the process.
To achieve the above object, a method for manufacturing a back-integrated laser device includes: the SOI wafer manufacturing process and the epitaxial wafer manufacturing process are performed;
The SOI wafer manufacturing process comprises the following steps: the first step: performing a front-end process on the SOI wafer, forming a waveguide structure with the silicon oxide layer, and grooving and depositing an interconnection metal layer on two sides of the waveguide structure in a silicon light back-end process; and a second step of: bonding the SOI wafer with the carrier wafer; removing a silicon substrate layer on the SOI wafer, grooving the corresponding position of the interconnection metal layer to the interconnection metal layer, manufacturing a first part of a metal layer electrode, and conducting with interconnection metals at two sides of the waveguide to form a second metal electrode part structure;
The epitaxial wafer manufacturing process comprises the following steps: depositing a transparent insulating layer on the surface of one side of the active layer on the epitaxial wafer; removing the insulating layer at the corresponding position of the interconnection metal layer to form a groove, and depositing a metal layer in the groove to form a second part of the metal layer electrode;
Bonding a silicon dioxide layer of the wafer after the SOI wafer manufacturing process and an epitaxial wafer insulating layer after the epitaxial wafer manufacturing process, so that a first part of the metal layer electrode and a second part of the metal layer electrode are conducted to form a second metal electrode structure; and forming an active laser device, and manufacturing a metal electrode at the upper end of the active laser device to form a first metal electrode.
In the invention, the internal step sequence of the SOI wafer manufacturing process step and the epitaxial wafer manufacturing process step cannot be adjusted due to the strict sequence, but the step time between the SOI wafer manufacturing process step and the epitaxial wafer manufacturing process step is not in strict sequence, for example, the SOI wafer manufacturing process step can be carried out, the epitaxial wafer manufacturing process step can be carried out first, and the steps can be cross-carried out. After the silicon optical wafer and the epitaxial wafer are subjected to metal/silicon dioxide hybrid bonding, the substrate can be removed, then the p-type material is subjected to graphical treatment, H + is injected, and finally the p-type electrode is manufactured.
The specific steps of performing front-end process on the SOI wafer in the first step in the silicon optical wafer process are photoetching and etching to form a laser coupling waveguide, and then depositing a dielectric layer; the silicon light back-end process comprises the specific steps of photoetching, etching, interconnection metal deposition and metal chemical mechanical polishing.
Another object of the present invention is to provide a back-integrated laser device, which includes a substrate, a waveguide structure disposed in the silicon dioxide layer of the substrate, and an active laser device, wherein the active laser device is bonded with the silicon dioxide layer of the substrate through a semiconductor material layer, a first metal electrode is disposed on the upper portion of the active laser device, a second metal electrode structure is disposed in the silicon dioxide layer of the substrate, and the second metal electrode structure is disposed on two sides of the waveguide structure and is not in contact with the waveguide structure; the active layer is covered on the upper part of the second metal electrode structure in a whole or in a part, the second metal electrode structure comprises an interconnection metal layer and an electrode metal layer, and the electrode metal layer is formed by splicing at least two parts.
Specifically, the second metal electrode structure is located right below the side edge of the active device.
Compared with the prior art, the manufacturing method of the back integrated laser device has the following advantages:
(1) The invention adopts a back-facing laser integration scheme, and forms a bottom contact electrode by changing the position and the manufacturing sequence of the electrode. Wherein, forming the electrode at the bottom can reduce the lateral length between the electrode and the device in the device, thereby reducing the resistance of the device; the total resistance of the device can be reduced to 66% of the original resistance, the Joule heat generated by the device can be reduced, and the efficiency of the device is improved;
(2) The bottom electrode is manufactured, so that the etched end face of the active region is far away from the contact electrode, non-radiative recombination caused by end face defects of the active region can be effectively reduced, and carrier injection efficiency is improved;
(3) And the manufacture of the bottom electrode and the original interconnection metal can form a metal heat dissipation channel, so that the thermal impedance of the device is reduced, and the thermal performance of the device is improved.
Drawings
Fig. 1 is a schematic diagram of a product structure after processing in step S1 in a method for manufacturing a back-integrated laser device according to the present embodiment;
Fig. 2 is a schematic diagram of a product structure after the processing of step S2 in the method for manufacturing a back-integrated laser device according to the present embodiment;
Fig. 3 is a schematic diagram of a product structure after the processing of step S3 in the method for manufacturing a back-integrated laser device according to the present embodiment;
fig. 4 is a schematic diagram of a product structure after the processing of step S4 in the method for manufacturing a back-integrated laser device according to the present embodiment;
fig. 5 is a schematic diagram of a product structure after processing in step S5 in the method for manufacturing a back-integrated laser device according to the present embodiment;
fig. 6 is a schematic diagram of a product structure after the treatment of step A1 in the method for manufacturing a back-integrated laser device according to the present embodiment;
Fig. 7 is a schematic diagram of a product structure after the treatment of step A2 in the method for manufacturing a back-integrated laser device according to the present embodiment;
fig. 8 is a schematic diagram of a product structure without annealing treatment in the step B1 process in the method for manufacturing a back-integrated laser device according to the present embodiment;
Fig. 9 is a schematic diagram of a product structure after annealing treatment in the step B1 process in the method for manufacturing a back-integrated laser device according to the present embodiment;
fig. 10 is a schematic diagram of a product structure after annealing treatment in the step B2 process in the method for manufacturing a back-integrated laser device according to the present embodiment;
FIG. 11 is a schematic diagram of a device n-type III-V lateral length label facing away from a pre-deposited electrode of an integrated laser device according to the present embodiment
FIG. 12 is a schematic diagram of a device of the present embodiment facing away from the pre-deposited electrode of the integrated laser device;
FIG. 13 is a schematic view of a heat dissipation channel of the device of the present embodiment facing away from a pre-deposited electrode of the integrated laser device;
FIG. 14 is a schematic diagram of a conventional back-integrated laser device manufactured by the process of step C1;
FIG. 15 is a schematic diagram of a conventional back-integrated laser device manufactured by the process of step C2;
FIG. 16 is a schematic diagram of a conventional back-integrated laser device manufactured by the process of step C3;
FIG. 17 is a schematic diagram of a conventional back-integrated laser device manufactured by the process of step C4;
FIG. 18 is a schematic diagram of a conventional back-integrated laser device manufactured by the process of step C5;
FIG. 19 is a graph of a conventional lateral length label between electrodes of a back-integrated laser device;
fig. 20 is a schematic diagram of a conventional back-integrated laser device.
Reference numerals: 1-a carrier wafer; a 2-silicon dioxide layer; 3-an interconnect metal layer; a 4-waveguide structure; 5-grooves; 6-electrode metal layer; 7-an active layer; 8. 13-InP layer; a 9-P-InGaAs layer, 10-a first metal electrode; 11-heat dissipation channels; 12-silicon substrate layer.
Detailed Description
The invention is further described below with reference to the drawings and specific examples.
Examples
As shown in fig. 1 to 10, a method for manufacturing a back-integrated laser device includes a process for manufacturing an SOI wafer and a process for manufacturing an epitaxial wafer;
the SOI wafer manufacturing process comprises the following steps:
S1: performing a front-end process on the SOI wafer to form a coupling waveguide structure 4, and depositing interconnection metal layers 3 on two sides of the laser coupling waveguide structure in a silicon light back-end process; the specific steps of performing front-end process on the SOI wafer include, but are not limited to, photoetching and etching to form a laser coupling waveguide, and then depositing a silicon dioxide layer 2; the silicon light back-end process comprises the specific steps of photoetching, etching, interconnection metal deposition and metal Chemical Mechanical Polishing (CMP);
s2: bonding the SOI wafer processed in the step S1 with a carrier wafer; and turning over the bonded SOI wafer by 180 degrees.
S3: removing the substrate on the SOI wafer, and thinning the silicon dioxide layer on the SOI wafer to be less than or equal to 500nm, wherein the typical thickness is 50nm;
S4: photoetching and etching grooves 5 on the silicon dioxide of the thinned SOI wafer obtained in the step S3 at the corresponding positions of the interconnection metal layer to expose all or part of the interconnection metal layer 3; in this embodiment, the recess is taken as an example for illustration, and in other embodiments, the recess may be formed by equivalent technical means such as a through hole, and still fall within the scope of the present invention;
s5: manufacturing a first metal electrode part, and conducting with interconnection metal layers on two sides of the waveguide structure 4 to form a second metal electrode part structure; the specific step of electrode metal layer deposition is to deposit electrode metal by adopting a thermal evaporation plating or electroplating or sputtering method, and then to carry out CMP planarization, wherein the metal type comprises any one or any combination of Ti, ni, tiGe, tiP, niGe, ni 2 P, auGeNi.
The epitaxial wafer manufacturing process comprises the following steps:
A1: depositing a layer of silicon dioxide on the surface of one side of the active layer of the epitaxial wafer by utilizing a plasma enhanced chemical vapor deposition method;
A2: and removing the silicon dioxide at the corresponding position of the interconnection metal layer by utilizing photoetching and etching, namely, grooving, depositing electrode metal in the groove, and then carrying out CMP planarization to form a second part of the metal layer electrode in the groove. The second portion of the metal layer electrode material metal type comprises any one or any combination of Ti, ni, tiGe, tiP, niGe, ni 2 P, auGeNi. May be the same as or different from the first portion of the metal layer electrode.
After the SOI wafer process and the epitaxial wafer manufacturing process are completed, bonding is carried out according to the following steps:
b1: bonding the wafer silicon dioxide layer after the SOI wafer manufacturing process and the epitaxial wafer silicon dioxide layer after the epitaxial wafer manufacturing process; the first part of the metal layer electrode and the second part of the metal layer electrode are conducted to form a second metal electrode structure; carrying out an annealing process after bonding is completed, wherein the annealing temperature is 200-400 ℃;
b2: and removing the surface InP layer, performing patterning treatment, injecting H +, and finally manufacturing the first metal electrode.
The invention also provides a back-integrated laser device, which comprises a carrier wafer 1, a waveguide structure 4 and an active laser device, wherein the active laser device is bonded with a substrate silicon dioxide layer through a semiconductor material layer, a first metal electrode 10 is arranged at the upper part of the active laser device, a second metal electrode structure is arranged in a silicon dioxide layer 2 on the carrier wafer 1, and the second metal electrode structure is positioned at two sides of the waveguide structure 4 and is not contacted with the waveguide structure 4; the active layer 7 is covered on the upper part of the second metal electrode structure in a whole or in a part, the second metal electrode structure comprises an interconnection metal layer 3 and an electrode metal layer 6, and the electrode metal layer is formed by splicing at least two parts.
Comparative example
As shown in fig. 14 to 18, the conventional fabrication process of the back-integrated laser includes the following steps:
C1: the SOI wafer upper waveguide manufacturing comprises a silicon light front-end process and a back-end process;
c2: bonding the SOI silicon optical wafer with the carrier wafer;
And C3: turning over the wafer, removing the original SOI wafer substrate, and thinning the silicon dioxide layer;
And C4: bonding with the epitaxial wafer;
C5: removing the surface InP layer, performing patterning treatment, injecting H +, and manufacturing the first metal electrode and the second metal electrode.
As shown in fig. 12 and fig. 20, in the conventional laser integration scheme, the fabrication of the relevant electrode involves etching of the active region, so that defects are easily introduced into the etched end face of the active region, and non-radiative recombination is caused in the carrier injection process; the preparation of the bottom electrode in the invention can enable the etched end face of the active region to be positioned outside the side face of the laser device, thereby effectively reducing non-radiative recombination caused by the end face defect of the active region and improving the carrier injection efficiency.
From the comparative analysis of fig. 11 and 19, it is found that for highly doped n-type III-V, the corresponding resistance is 9Ω for a length of about 10 μm at a thickness of 100 nm. In the invention, the length of the n-type III-V in the device can be shortened to 6 mu m according to the position of the electrode, and the resistance is reduced to 5.4 omega. The n-type III-V resistance is reduced to 60% of the original resistance, and the total resistance of the device is reduced to 66% of the original resistance. Among them, the calculation references Experimental and theoretical THERMAL ANALYSIS of a Hybrid Silicon EVANESCENT LASER and Hybrid Silicon Laser Technology: A THERMAL PERSPECTIVE of the resistance.
As shown in fig. 13, the bottom electrode is fabricated to form a metal heat dissipation channel together with the original interconnection metal, so as to reduce the thermal resistance of the device, thereby improving the thermal performance of the device.
While the preferred embodiments of the present application have been described in detail, the present application is not limited to the embodiments, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit of the present application, and these equivalent modifications and substitutions are intended to be included in the scope of the present application as defined in the appended claims.
Claims (11)
1. The integrated laser device comprises a substrate, a waveguide structure and an active laser device, wherein the waveguide structure and the active laser device are arranged in a substrate silicon dioxide layer, the active laser device is bonded with the substrate silicon dioxide layer through a semiconductor material layer, and a first metal electrode is arranged at the upper part of the active laser device; the active layer is covered on the upper part of the second metal electrode structure, the second metal electrode structure comprises an interconnection metal layer and an electrode metal layer, a transparent insulating layer is deposited on the surface of one side of the active layer, the insulating layer is removed at the corresponding position of the interconnection metal layer to form a groove, and the electrode metal layer is formed by splicing at least two parts of a first part of a metal layer electrode formed by conducting the interconnection metal layer on two sides of the waveguide structure and a second part of a metal layer electrode formed by depositing electrode metal in the groove of the insulating layer.
2. A back-integrated laser device as in claim 1 wherein said second metal electrode structure is located directly below the active device side.
3. The manufacturing method of the back integrated laser device is characterized by comprising an SOI wafer manufacturing process and an epitaxial wafer manufacturing process;
The SOI wafer manufacturing process comprises the following steps: firstly, performing a front-end process on an SOI wafer, forming a waveguide structure with a silicon oxide layer, and in a silicon light back-end process, grooving and depositing an interconnection metal layer on two sides of the waveguide structure; bonding the SOI wafer and the carrier wafer; removing a silicon substrate layer on the SOI wafer, grooving the corresponding position of the interconnection metal layer to the interconnection metal layer, manufacturing a first part of a metal layer electrode, and conducting with interconnection metals on two sides of the waveguide to form a second metal electrode part structure;
The epitaxial wafer manufacturing process comprises the following steps: depositing a transparent insulating layer on the surface of one side of the active layer on the epitaxial wafer; removing the insulating layer at the corresponding position of the interconnection metal layer to form a groove, and depositing a metal layer in the groove to form a second part of the metal layer electrode;
Bonding a silicon dioxide layer of the wafer after the SOI wafer manufacturing process and an epitaxial wafer insulating layer after the epitaxial wafer manufacturing process, so that a first part of the metal layer electrode and a second part of the metal layer electrode are conducted to form a second metal electrode structure;
And forming an active laser device, and manufacturing a metal electrode at the upper end of the active laser device to form a first metal electrode.
4. A method of fabricating a back-integrated laser device according to claim 3, wherein the SOI fabrication process step and the epitaxial wafer fabrication process step sequence are adjusted in whole or in any part according to actual needs.
5. The method of claim 4, wherein after bonding the SOI wafer and the carrier wafer, further comprising: and turning over the bonded SOI wafer by 180 degrees.
6. The method of claim 4, wherein after removing the silicon substrate layer in the second step of the SOI fabrication process, further comprising: the silicon oxide layer on the SOI wafer is thinned to a target value.
7. A method of fabricating a back-integrated laser device according to claim 4, wherein the active layer covers the second metal electrode structure in whole or in part.
8. A method of fabricating a back-integrated laser device according to any of claims 4 to 7, wherein the specific process of fabricating the first and/or second portions of the metal layer electrode is to deposit an electrode metal layer by thermal evaporation or electroplating or sputtering, followed by CMP planarization.
9. The method of claim 8, wherein the first or second portion of metal layer electrode is any one or any combination of Ti, ni, tiGe, tiP, niGe, ni to P, auGeNi.
10. A method of fabricating a back-integrated laser device according to any of claims 4 to 7, wherein the process of bonding the silicon dioxide layer of the wafer after the SOI fabrication process and the insulating layer of the epitaxial wafer after the epitaxial wafer fabrication process further comprises surface cleaning the silicon dioxide layer of the wafer and/or the insulating layer of the epitaxial wafer, and performing surface activation, bonding and annealing on the cleaned silicon dioxide layer and/or insulating layer.
11. A method of fabricating a back-integrated laser device according to claim 3, wherein the epitaxial-wafer insulating layer material is silicon dioxide.
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| CN102638000A (en) * | 2012-04-20 | 2012-08-15 | 中国科学院半导体研究所 | Method for preparing silicon-based mix laser device by etching trenchs on silicon waveguide |
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| JP2008198957A (en) * | 2007-02-16 | 2008-08-28 | Hitachi Ltd | Semiconductor laser device and optical amplification device |
| CN101465365B (en) * | 2007-12-17 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of manufacturing method of non-volatile impedance memory |
| US8803292B2 (en) * | 2012-04-27 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias and methods for forming the same |
| CN102882129A (en) * | 2012-10-25 | 2013-01-16 | 中国科学院半导体研究所 | Method for preparing multi-wavelength silica-based hybrid laser array by changing width of silicon waveguide |
| CN103887705A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Method for manufacturing silicon-based mixing laser achieving complete metal limitation |
| CN104092096B (en) * | 2014-06-27 | 2017-10-03 | 中国科学院半导体研究所 | A kind of single mode silicon substrate hybrid laser light source of silicon waveguide output |
| CN104283109A (en) * | 2014-09-26 | 2015-01-14 | 中国科学院半导体研究所 | A silicon-based microcavity laser based on a metal-limited heat dissipation structure and its manufacturing method |
| EP3382433A1 (en) * | 2017-03-28 | 2018-10-03 | Nokia Solutions and Networks Oy | Full wafer integration of iii-v devices |
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