CN112768434A - MicroLED display panel and forming method thereof - Google Patents
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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Abstract
本发明提供一种MicroLED显示面板及其形成方法，MicroLED显示面板包括：驱动晶圆和MicroLED器件；驱动晶圆具有相对的第一表面和第二表面，驱动晶圆临近第一表面的区域分布有驱动电路；第二表面与驱动电路之间设置有多个硅通孔，硅通孔中填充有互连层；MicroLED器件位于驱动晶圆的第二表面一侧；MicroLED器件通过互连层与驱动电路电连接。本发明为一种类BSI图像传感器制程,使高应力的MicroLED器件位于驱动晶圆的第二表面一侧，即使高应力的MicroLED器件远离驱动电路，避免了MicroLED器件(例如GaN层)的热膨胀等应力直接施予驱动电路造成损伤,进而提高可靠度。
The invention provides a MicroLED display panel and a method for forming the same. The MicroLED display panel includes: a driving wafer and a MicroLED device; the driving wafer has a first surface and a second surface opposite to each other, and the area of the driving wafer adjacent to the first surface is distributed with A driver circuit; a plurality of through-silicon vias are arranged between the second surface and the driver circuit, and the through-silicon vias are filled with an interconnection layer; the MicroLED device is located on the side of the second surface of the driver wafer; the MicroLED device is connected to the driver through the interconnection layer circuit electrical connection. The present invention is a BSI-like image sensor manufacturing process, so that the high-stress MicroLED device is located on the second surface side of the driving wafer, even if the high-stress MicroLED device is far away from the driving circuit, and the thermal expansion of the MicroLED device (eg GaN layer) is avoided. Direct application to the drive circuit causes damage, thereby improving reliability.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing, and particularly relates to a micro LED display panel and a forming method thereof.
Background
Micro led (Micro light emitting diode) display is a next generation display technology that is emerging after liquid crystal display and OLED display. The micro LED display adopts LED light emitting chips (micro LED chips) with the size of several micrometers to dozens of micrometers as pixel units, one LED light emitting chip is closely arranged into an array, and each chip can be independently driven to light to emit light. The micro LED display has the advantages of self luminescence, high efficiency, long service life, ultrahigh resolution and the like. Application products displayed by the MicroLED are potential application fields of MicroLED display from near-eye display of AR/VR and the like to wearable equipment and mobile devices which are extremely sensitive to power consumption and to ultra-large screen display of more than 100 inches.
MicroLED (also known as MicroLED, mLED or μ LED). The fabrication of the μ LED display panel includes two conventional architecture approaches. First, a mu LED single crystal grain or chip is directly attached (bonded) to a side surface of the driving wafer close to the driving circuit, and a GaN layer included in the mu LED single crystal grain or chip has high stress and directly acts on the driving circuit, which easily causes the driving circuit to collapse and further fail. In the second method, an epitaxial structure layer (LED epitaxial layer) is directly formed on the surface of the driving wafer close to the driving circuit. The LED epitaxial layer comprises a GaN stacking layer with high stress, and the driving circuit is easy to split and further fails due to the high stress.
Disclosure of Invention
The invention aims to provide a micro LED display panel and a forming method thereof, which can avoid the damage of a driving circuit and improve the reliability.
The invention provides a MicroLED display panel, comprising: driving the wafer and the MicroLED device; the driving wafer is provided with a first surface and a second surface which are opposite, and driving circuits are distributed in the area, close to the first surface, of the driving wafer; a plurality of silicon through holes are arranged between the second surface and the driving circuit, and the silicon through holes are filled with interconnection layers; the micro LED device is positioned on one side of the second surface of the driving wafer; the MicroLED device is electrically connected with the driving circuit through the interconnection layer.
Further, the micro LED device comprises a micro LED wafer, a micro LED chip block or micro LED chip particles distributed in an array.
Furthermore, an isolation layer is formed between the second surface of the driving wafer and the micro led chip particles distributed in the micro led chip block or array, and the through silicon via also penetrates through the isolation layer.
Further, the micro LED wafer comprises a growth substrate, a Ga base layer and an epitaxial structure layer which are sequentially located on the second surface of the driving wafer, and the silicon through hole penetrates through the growth substrate.
Further, the growth substrate comprises a SiC substrate or a sapphire substrate; the Ga-based layer comprises an N-type GaN layer or an N-type GaAs layer; the epitaxial structure layer comprises a quantum well layer, a P-type GaN layer or a P-type GaAs layer.
Further, the driving wafer comprises a driving substrate, and the driving substrate is a silicon substrate with a (111) crystal plane.
Further, the method also comprises the following steps: carrying a wafer; the carrier wafer is bonded to the first surface of the driver wafer.
Further, the method also comprises the following steps:
the insulating layer covers the surface of one side, far away from the driving wafer, of the slide glass wafer and the surface of the side wall of the slide glass wafer;
the leading-out hole penetrates through the insulating layer and the slide wafer;
and the lead-out metal layer is filled in the lead-out hole and is electrically connected with the driving circuit.
Further, the method also comprises the following steps:
the insulating layer covers the surface of one side, far away from the driving wafer, of the slide glass wafer and the surface of the side wall of the slide glass wafer;
the redistribution metal layer covers the insulating layer on the side wall of the slide glass wafer, covers the insulating layer at two ends of one side, away from the drive wafer, of the slide glass wafer, covers the drive wafer, is arranged on the first surface, and is electrically connected with the drive circuit.
Furthermore, the material of the slide wafer comprises Si and Al2O3、AlN、PCB、At least one of Cu or graphene.
The invention also provides a forming method of the MicroLED display panel, which comprises the following steps:
providing a driving wafer, wherein the driving wafer is provided with a first surface and a second surface which are opposite, and a driving circuit is distributed in the area of the driving wafer, which is close to the first surface;
forming a plurality of through-silicon vias penetrating a portion of the thickness of the driver wafer from the second surface, the through-silicon vias being located above the driver circuit;
forming an interconnection layer, wherein the interconnection layer fills the silicon through hole and is electrically connected with the driving circuit;
forming a micro LED device, wherein the micro LED device is positioned on one side of the second surface of the driving wafer; the MicroLED device is electrically connected with the interconnection layer.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a MicroLED display panel and a forming method thereof, wherein the MicroLED display panel comprises: driving the wafer and the MicroLED device; the driving wafer is provided with a first surface and a second surface which are opposite, and driving circuits are distributed in the area, close to the first surface, of the driving wafer; a plurality of silicon through holes are arranged between the second surface and the driving circuit, and the silicon through holes are filled with interconnection layers; the micro LED device is positioned on one side of the second surface of the driving wafer; the MicroLED device is electrically connected with the driving circuit through the interconnection layer. The invention relates to a BSI (Backside illumination) image sensor manufacturing process, which enables a high-stress micro LED device to be positioned on one side of the second surface of a driving wafer, even if the high-stress micro LED device is far away from a driving circuit, the damage caused by the fact that the stress such as thermal expansion of the micro LED device (such as a GaN layer) is directly applied to the driving circuit is avoided, and the reliability of a product is further improved.
Drawings
Fig. 1a is a schematic structural diagram of a first outgoing line mode of a micro led display panel according to an embodiment of the present invention.
Fig. 1b is a schematic structural diagram of a first method for redistributing a metal layer to output wires for a micro led display panel according to an embodiment of the present invention.
Fig. 2 is a schematic view of a second micro led display panel according to an embodiment of the invention.
Fig. 3 is a schematic view of a third micro led display panel according to an embodiment of the invention.
Fig. 4 is a schematic flow chart of a method for forming a micro led display panel according to an embodiment of the present invention.
Fig. 5 to 12 are schematic diagrams illustrating steps of a method for forming a micro led display panel according to an embodiment of the present invention.
Wherein the reference numbers are as follows:
10-a slide wafer; 20-driving the wafer; 201-a drive circuit; v1-a through silicon via; 30-an isolation layer; 40-an interconnect layer; 51-MicroLED chip particles; 52-MicroLED chip block; 53-MicroLED wafer; 53 a-growth substrate; 53 b-Ga-based layer; 53 c-epitaxial structure layer; 60-an insulating layer; 70-leading out a metal layer; 80-an insulating layer; 90-redistribution of the metal layer.
Detailed Description
Based on the research, the embodiment of the invention provides a micro LED display panel and a forming method thereof. The invention is described in further detail below with reference to the figures and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted, however, that the drawings are designed in a simplified form and are not to scale, but rather are to be construed in an illustrative and descriptive sense only and not for purposes of limitation.
The embodiment of the invention provides a micro LED display panel, which comprises: driving the wafer and the MicroLED device; the driving wafer is provided with a first surface and a second surface which are opposite, and driving circuits are distributed in the area, close to the first surface, of the driving wafer; a plurality of silicon through holes are arranged between the second surface and the driving circuit, and the silicon through holes are filled with interconnection layers; the micro LED device is positioned on one side of the second surface of the driving wafer; the MicroLED device is electrically connected with the driving circuit through the interconnection layer.
Specifically, the micro LED device comprises a micro LED wafer, a micro LED chip block or micro LED chip particles distributed in an array.
As shown in fig. 1a, 1b and 2, the micro led display panel includes a driving wafer 20 and micro led devices; the micro led device in fig. 1a and 1b is an array of distributed micro led die particles (single die) 51; the micro led device in fig. 2 is a micro led chip block 52. The driving wafer 20 has a first surface f opposite to the first surface1And a second surface f2The driving wafer 20 is adjacent to the first surface f1The driving circuit 201 is distributed in the area; the second surface f2And a plurality of through silicon vias are arranged between the driving circuit 201 and the driving circuit, and the through silicon vias are filled with an interconnection layer 40. The second surface f of the driver wafer 202An isolation layer 30 is formed between the micro LED chip blocks or the micro LED chip particles distributed in the array, and the silicon through holes penetrate through the isolation layer. Each of the micro led die 51 in fig. 1a and 1b is electrically connected to the driving circuit 201 through the interconnect layer 40 in the through-silicon via. In fig. 2, the micro led chip block 52 is a collection of a plurality of micro led chips that are not diced, and the micro led chips in the micro led chip block 52 are electrically connected to the driving circuit 201 through the interconnection layer 40 in the through silicon via.
The driver wafer 20 includes a driver substrate (not shown) and a driver circuit 201 on the driver substrate. One or more dielectric layers, such as silicon dioxide (SiO), are formed over the drive substrate2) And (3) a layer. The wiring and/or contacts of the driver circuit 201 may be formed in or on one or more dielectric layers. The driving substrate may be a semiconductor substrate such as an amorphous semiconductor substrate, a polycrystalline semiconductor substrate, or a single crystal semiconductor substrate. The semiconductor substrate is, for example, a silicon substrate; preferably, the driving substrate is a silicon substrate with a (111) crystal plane, the single crystal structure is high in strength, the single crystal lattice is stable in the whole, and better support is provided for a growth substrate (such as SiC) and an epitaxial structure layer which are deposited later, or an isolation layer and a MicroLED device.
The driving circuit 201 is used to control millions of pixels on the micro led chip to present an image on the micro led display panel. Each drive circuit may comprise a single semiconductor device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a Thin Film Transistor (TFT), a High Electron Mobility Transistor (HEMT), a Heterojunction Bipolar Transistor (HBT), a metal-semiconductor fet (mesfet) or a metal-insulator-semiconductor fet (misfet) or an integrated circuit comprising two or more of any of the above types of devices.
Examples of micro led chips include GaN-based UV/blue/green micro leds, AlInGaP-based red/orange micro leds, and GaAs or InP-based Infrared (IR) micro leds. Micro leds can achieve the high density required for light field displays. Micro LEDs, also known as mleds or μ LEDs, can provide better performance, including brightness and energy efficiency, than other display technologies, such as Liquid Crystal Display (LCD) technology or organic LED (oled) technology.
The driver circuit 201 may be configured to provide appropriate signals, voltages and/or currents to drive or operate the micro led chips (e.g., select light emitting elements, control settings or control brightness, etc.). The driving circuit 201 may be configured to drive a single micro led chip or a plurality of micro led chips. In some embodiments, there may be a one-to-one correspondence, where one driving circuit 201 may be used to drive or operate a respective micro led chip. In other embodiments, there may be a one-to-many correspondence, where one driving circuit 201 may be used to drive or operate a plurality of micro led chips. The micro led chip produces light of one or more colors. The micro LED chip can emit red, green and blue light.
The micro LED display panel further comprises: a carrier wafer 10; the first surfaces f of the carrier wafer 10 and the driver wafer 201And (4) bonding. On a cross section perpendicular to the upper and lower surfaces of the carrier wafer 10, the carrier wafer 10 is in an inverted trapezoid shape or a rectangular shape. The material of the carrier wafer 10 comprises Si and Al2O3At least one of AlN, PCB, Cu, or graphene.
Fig. 1a shows a schematic structural diagram of a first outgoing line mode of a micro led display panel outgoing hole. Fig. 1b shows a schematic structural diagram of a first method for redistributing a metal layer to lead out a micro led display panel.
As shown in fig. 1a, the micro led display panel further includes: the insulating layer 60 covers one side surface and the side wall surface of the carrier wafer 10 far away from the driving wafer 20; a lead-out hole that extends through the insulating layer 60 and the carrier wafer 10. And the lead-out metal layer 70 fills the lead-out hole and is electrically connected with the driving circuit 201, and in the embodiment, the electric signal of the driving circuit 201 is led out in a lead-out hole lead-out mode.
As shown in fig. 1b, the micro led display panel further includes: the insulating layer 80 covers one side surface and the side wall surface of the carrier wafer 10 far away from the driving wafer 20; a redistribution metal layer 90, the redistribution metal layer 90 covering the insulation layer 80 on the side wall of the carrier wafer 10, the insulation layer 80 covering both ends of the bottom (the side far away from the driving wafer 20) of the carrier wafer 10, and the first surface f covering the driving wafer 201The surface of the upper carrier wafer 10 on the peripheral side is located on the first surface f1The redistribution metal layer 90 is electrically connected with the driving circuit 201, and the electric signal of the driving circuit 201 is led out in the redistribution metal layer mode.
In the embodiment shown in fig. 1a, 1b and 2, the micro led die particles (single chip) 51 or the micro led die bumps 52 distributed in an array are located on the second surface f of the driver wafer 202One side; a driving substrate and an isolation layer 30 are arranged between the driving circuit 201 and the MicroLED chip particles 51 or the MicroLED chip blocks 52, and the MicroLED device is electrically connected with the driving circuit 201 through the interconnection layer 40 in the silicon through hole, so that the high-stress MicroLED chip particles 51 or the MicroLED chip blocks 52 are far away from the driving circuit 201, the damage caused by the direct application of stress such as thermal expansion of the MicroLED device (such as a GaN layer) to the driving circuit is avoided, and the reliability is further improved.
As shown in fig. 3, the micro led display panel includes a driving wafer 20 and a micro led device; the micro led device in fig. 3 is a micro led wafer 53. The portions of the driver wafer 20 and the carrier wafer 10 in fig. 3 are the same as those described above with reference to fig. 1a, 1b, and 2, and will not be described again. In this embodiment, the second surface f of the driving wafer 202Is provided with a MicroLED wafer 53, the MicroLED wafer 53 comprises a plurality of micro LED wafers which are arranged in sequenceThe second surface f of the drive wafer 202 A growth substrate 53a, a Ga-based layer 53b and an epitaxial structure layer 53c, said through-silicon-vias further penetrating said growth substrate 53 a. The growth substrate 53a includes a SiC substrate or a sapphire substrate; the Ga-based layer 53b includes an N-type GaN layer or an N-type GaAs layer; the epitaxial structure layer 53c includes a quantum well layer, a P-type GaN layer, or a P-type GaAs layer. In the embodiment, the electrodes of each micro led chip in the micro led wafer 53 are electrically connected to the driving circuit 201 on the driving wafer 20 through the interconnection layer 40 in the through silicon via, so that the pixels of each micro led chip can be driven; i.e., through the interconnect layer 40 in the through-silicon via, the driving circuit 201 is enabled to provide pixel driving for the micro led chip.
In the embodiment shown in fig. 3, the micro led wafer 53 is located on the second surface f of the driving wafer 202One side; a driving substrate is arranged between the driving circuit 201 and the micro led wafer 53, and the micro led wafer 53 is electrically connected with the driving circuit 201 through the interconnection layer 40, so that the high-stress micro led wafer 53 is far away from the driving circuit 201, and the damage caused by the direct application of stress such as thermal expansion of the micro led wafer 53 (for example, a GaN layer) to the driving circuit is avoided, thereby improving the reliability.
It should be understood that fig. 1b shows a schematic structural diagram of a first micro led display panel using the redistribution metal layer 90 for wire routing. In a second type of the micro led display panel shown in fig. 2, the micro led device is a micro led chip block 52. In a third kind of micro led display panel in fig. 3, the micro led device is a micro led wafer 53. The second type of micro led display panel and the third type of micro led display panel can also adopt a redistribution metal layer wire outgoing mode, and the wire outgoing mode of the redistribution metal layer is the same as that introduced in the first type of micro led display panel in fig. 1b, and is not described again.
The embodiment of the invention also provides a method for forming the micro LED display panel, as shown in FIG. 4, the method comprises the following steps:
step S1, providing a driving wafer, wherein the driving wafer is provided with a first surface and a second surface which are opposite to each other, and driving circuits are distributed in the area of the driving wafer, which is close to the first surface;
step S2, forming a plurality of through silicon vias, the through silicon vias penetrating through a part of the thickness of the driver wafer from the second surface, the through silicon vias being located above the driver circuit;
step S3, forming an interconnection layer, wherein the interconnection layer fills the silicon through hole and is electrically connected with the driving circuit;
step S4, forming a MicroLED device, wherein the MicroLED device is located on one side of the second surface of the driving wafer; the MicroLED device is electrically connected with the interconnection layer.
The steps of the method for forming the micro led display panel according to the embodiment of the invention are described in detail below with reference to fig. 5 to 12.
As shown in fig. 5, a driver wafer 20 is provided, the driver wafer 20 having a first surface f opposite to the first surface f1And an initial surface f0The driving wafer 20 is adjacent to the first surface f1The area of which is distributed with the driving circuit 201.
As shown in fig. 6 and 7, the first surface f of the driving wafer 20 is formed1Bonded to a carrier wafer 10. The initial surface f of the drive wafer 200One side is thinned, and the thinned surface of the drive wafer 20 is a second surface f2。
As shown in fig. 8, through-silicon vias V are formed on the thinned driver wafer 201Said through-silicon via V1From the second surface f2The through-silicon-via V penetrates through the partial thickness of the driver wafer 201Above the driving circuit 201. The through silicon via V can be formed by adopting a dry etching method1。
As shown in fig. 9, an isolation layer 30 is formed, the isolation layer 30 covering at least the second surface f2(ii) a Preferably, the insulating layer can also cover the through silicon via V1Of the base plate. Illustratively, the isolation layer 30 is, for example, a silicon oxide layer.
As shown in fig. 10, an interconnection layer 40 is formed, and the interconnection layer 40 fills the through-silicon via V1And is electrically connected to the driving circuit 201. The micro led chip particles 51 are formed on the isolation layer 30 and the interconnection layer 40, and the formation of the micro led chip particles 51 is a post process, and can be adhered by a die attach method. The MicThe ROLED die 51 is electrically connected to the interconnect layer 40; the micro LED chip is also called mLED or μ LED.
Next, as shown in fig. 1a, a chamfer is formed on the carrier wafer 10 such that the carrier wafer 10 has an inverted trapezoidal shape in a cross section perpendicular to the upper and lower surfaces of the carrier wafer 10. In an alternative embodiment, the carrier wafer 10 may have a rectangular cross-sectional shape. The chamfer can be formed by wet etching or dry etching. Forming an insulating layer 60 on a side surface and a sidewall surface of the carrier wafer 10 away from the driver wafer 20; forming a lead-out hole that penetrates through the insulating layer 60 and the slide wafer 10; and forming an extraction metal layer 70, wherein the extraction metal layer 70 fills the extraction hole and is electrically connected with the driving circuit 201. The signal of the driving circuit 201 is led out through the lead-out metal layer 70, and is conveniently electrically connected with the outside.
In the method for forming the micro led display panel shown in fig. 2, as shown in fig. 9 and fig. 2, an interconnection layer 40 is formed, and the interconnection layer 40 fills the through silicon via V1And is electrically connected to the driving circuit 201. Forming a MicroLED die paddle 52, the MicroLED die paddle 52 being electrically connected to the interconnect layer 40.
In the method for forming the micro led display panel shown in fig. 3, next to fig. 8, as shown in fig. 11, a growth substrate 53a is formed, and the growth substrate 53a covers the second surface f of the driving wafer 202. In particular, it can be applied to the through silicon via V1Preferably a Bottom Anti-reflective coating (BARC) with good fluidity. Forming a second surface f covering the driving wafer 202And a growth substrate 53a filling the upper surface of the layer, the growth substrate 53a being etched to form a through-silicon via V1An opening directly above, said opening penetrating said growth substrate 53a and communicating with said through-silicon-via, also understood as said through-silicon-via V1Extending up to the upper surface of the growth substrate 53a, i.e., through-silicon-via V1Through the growth substrate 53a and a portion of the thickness of the drive wafer 20. Then, removing the through silicon via V1The filling layer in (1).
As shown in fig. 12, an interconnect layer 40 is formed, theAn interconnect layer 40 fills the through-silicon via V1And is electrically connected to the driving circuit 201. A Ga-based layer 53b is formed on the growth substrate 53a, and then an epitaxial structure layer 53c is formed on the Ga-based layer 53 b. The Ga-based layer 53b has pads (not shown) thereon distributed corresponding to the interconnect layer 40, the pads being electrically connected to the interconnect layer 40. The Ga-based layer 53b is, for example, an N-type GaN layer, and the epitaxial structure layer 53c may include a multilayer structure such as a quantum well layer and a P-type GaN layer.
As shown in fig. 12 and 3, a chamfer and a metal layer 70 are formed on the carrier wafer 10, and details are omitted with reference to the method for forming the micro led display panel in fig. 1. The micro led wafer 53 is formed on the driving wafer 20, and the micro led wafer 53 includes a plurality of micro led chips thereon. Through the interconnection layer 40 in the through-silicon via, the electrode of each micro led chip in the micro led wafer 53 is electrically connected to the driving circuit 201 on the driving wafer 20, so that each micro led chip can be driven. Each micro led chip may have two contacts: one connected to the driver circuit 201 through the interconnect layer 40 in the through-silicon-via and the other connected to ground (i.e., common electrode).
In summary, the present invention provides a micro led display panel and a method for forming the same, the micro led display panel includes: driving the wafer and the MicroLED device; the driving wafer is provided with a first surface and a second surface which are opposite, and driving circuits are distributed in the area, close to the first surface, of the driving wafer; a plurality of silicon through holes are arranged between the second surface and the driving circuit, and the silicon through holes are filled with interconnection layers; the micro LED device is positioned on one side of the second surface of the driving wafer; the MicroLED device is electrically connected with the driving circuit through the interconnection layer. The invention relates to a BSI (Backside illumination) image sensor manufacturing process, which enables a high-stress micro LED device to be positioned on one side of the second surface of a driving wafer, even if the high-stress micro LED device is far away from a driving circuit, the damage caused by the fact that the stress such as thermal expansion of the micro LED device (such as a GaN layer) is directly applied to the driving circuit is avoided, and the reliability of a product is further improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the method disclosed by the embodiment, the description is relatively simple because the method corresponds to the device disclosed by the embodiment, and the relevant points can be referred to the description of the method part.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (11)
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