CN112768333A - Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines - Google Patents
Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines Download PDFInfo
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- CN112768333A CN112768333A CN201911073017.9A CN201911073017A CN112768333A CN 112768333 A CN112768333 A CN 112768333A CN 201911073017 A CN201911073017 A CN 201911073017A CN 112768333 A CN112768333 A CN 112768333A
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- reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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Abstract
本发明提供一种磁力线遮蔽控制反应腔室磁场的蚀刻机结构，其包括：第一等离子体反应腔体，具有第一反应腔室；第一线圈模块，环绕设置于第一反应腔室的外围；以及第一磁力线遮蔽模块，环绕设置于第一线圈模块的外围。借由本发明的实施，可以阻挡及/或反射第一线圈模块的磁力线及/或电磁波向外扩散且控制磁力线的形状，以有效创造更多制造过程参数，以便更精密的生产各类产品。
The invention provides an etching machine structure for shielding and controlling the magnetic field of a reaction chamber by magnetic lines of force, which comprises: a first plasma reaction chamber, which has the first reaction chamber; ; and a first magnetic field line shielding module, arranged around the periphery of the first coil module. With the implementation of the present invention, the magnetic field lines and/or electromagnetic waves of the first coil module can be blocked and/or reflected outward and the shape of the magnetic field lines can be controlled to effectively create more manufacturing process parameters for more precise production of various products.
Description
Technical Field
The present invention relates to an etcher structure with magnetic shielding for controlling the magnetic field of a reaction chamber, and more particularly to an etcher structure with magnetic shielding for controlling the magnetic field of a reaction chamber, which is used for controlling the plasma reaction such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning … of a reaction chamber in a manufacturing process.
Background
In the manufacture of semiconductor integrated circuits, for example, the growth of thin films of different materials, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning … of process chambers, is commonly achieved by plasma techniques.
In the field of vacuum coating, proper application of high-density plasma can not only achieve dense coating quality, but also complete coating at low temperature, and avoid adverse effects of high temperature on coating quality, so how to obtain high-density plasma is a key manufacturing process technology developed by various equipment manufacturers.
In the etching process, the distribution and control of the plasma density are more critical to the etching rate and the etching uniformity, so that how to effectively control the magnetic field in the vacuum coating or etching process becomes an important parameter in the process.
Disclosure of Invention
The invention relates to an etching machine structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines, which mainly solves the problem of how to create more parameters capable of controlling electric plasma so as to more precisely produce various products.
The invention provides an etching machine structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines, which comprises: a first plasma reaction chamber having a first reaction chamber; the first coil module is arranged around the periphery of the first reaction chamber; and the first magnetic line shielding module is arranged around the periphery of the first coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the first coil module from diffusing outwards and controlling the shape of the magnetic lines.
Preferably, the first magnetic line shielding module has a plurality of shielding shutters, and the length of each shielding shutter is greater than or equal to the vertical height of the first coil module.
Preferably, it further has: the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber; the second coil module is arranged around the periphery of the second reaction chamber; and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
The invention also provides an etching machine structure for controlling the magnetic field of the reaction chamber by shielding the magnetic force lines, which comprises: a first plasma reaction chamber having a first reaction chamber; the first coil module is arranged around the periphery of the first reaction chamber; the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber; the second coil module is arranged around the periphery of the second reaction chamber; and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
Preferably, the second magnetic line shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the second coil module.
Preferably, the opening or closing of the shutter is controlled by a control unit.
Preferably, the control unit performs full-area control on the shutter.
Preferably, the control unit performs 2-equal-area control on the shutter.
Preferably, the control unit performs 4-equal-area control on the shutter.
Preferably, the bottom of any of the shielding shutters controlled by the area has a shutter gear slidably coupled to a gear row of a gear disc, the gear disc is slidably coupled to the slide rail, the gear row of the gear disc is driven by a motor gear of a motor, and the control unit controls the motor to rotate forward and backward to open or close the shielding shutter.
By implementing the invention, at least the following progressive effects can be achieved:
first, the plasma density can be effectively controlled.
And secondly, various changes or combined magnetic fields can be generated. And
and thirdly, the manufacturing process can be more diversified.
So that those skilled in the art can readily understand the disclosure, the claims and the drawings, and can easily understand the objects and advantages of the present invention, the detailed features and advantages of the present invention will be described in detail in the embodiments.
Drawings
FIG. 1 is a first cross-sectional view of an etching machine with a magnetic field line shielding control reaction chamber.
FIG. 2 is a second cross-sectional view of an etching machine with a magnetic field line shielding control reaction chamber.
FIG. 3A is a diagram of a third cross-sectional view of an etching machine with a magnetic field line shielding control reaction chamber.
FIG. 3B is a diagram of a third embodiment of the structure of an etching machine with a magnetic field line shielding control reaction chamber.
Figure 4 is a diagram of an embodiment of a shutter and its driving machine unit.
FIG. 5 is a diagram of an embodiment of the total coverage variation of the first or the second masking module.
FIG. 6 is a diagram of an embodiment of 2-fold equal-area coverage variation of the first or second masking module.
FIG. 7 is a diagram of an embodiment of a 4-degree-of-division-area-ratio variation of the first or second masking module.
Fig. 8 is a comparison of plasma energy absorption characteristics before and after the use of the masking module.
FIG. 9 is a graph of plasma density variation for different diameter shadow modules simulated in a half chamber.
FIG. 10 is a table of plasma density without and with a shadow module at different powers.
FIG. 11 is a graph showing the comparison of the electric field intensity and the magnetic flux density.
FIG. 12 is a graph showing the comparative example of electric field intensity and magnetic flux density.
[ description of main element symbols ]
100: first embodiment of etching machine structure with magnetic line shielding control reaction chamber magnetic field
200: second embodiment of etching machine structure with magnetic line shielding control reaction chamber magnetic field
300: etching machine structure with magnetic line shielding control reaction chamber magnetic field
110: first plasma reaction chamber 111: a first reaction chamber
120: the first coil module 130: first magnetic line shielding module
131: blind louvers 131a,131 b: 2 group units
131a,131b,131c,131d …: 4 group units 132: shutter gear
140: the fluted disc 141: tooth row
142: slide rail 151: motor with a stator having a stator core
152: the motor gear 210: second plasma reaction chamber
220: the second coil module 230: second magnetic line shielding module
211: second reaction chamber 30: control unit
310: full zone control 320: 2 equal division zone control
330: 4 equal division area control d 1: length of the shutter
d 2: vertical height d3 of first coil module: vertical height of second coil module
L1: characteristic curve L2: characteristic curve
A: and a region B: region(s)
Detailed Description
As shown in fig. 1, a first embodiment 100 of an etcher structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines of force comprises: a first plasma reaction chamber 110; a first coil module 120; and a first flux shield module 130.
As shown in fig. 2, a second embodiment 200 of the structure of the etching machine for controlling the magnetic field of the reaction chamber by shielding magnetic lines is disclosed, which is to further provide the first embodiment 100 with: a second plasma reaction chamber 210; a second coil module 220; and a second flux shield module 230.
As shown in fig. 3, a third embodiment 300 of a magnetic field line shielding control etching machine structure for controlling the magnetic field of a reaction chamber is provided, which includes: a first plasma reaction chamber 110; a first coil module 120; a second plasma reaction chamber 210; a second coil module 220; and a second flux shield module 230.
The elements of the above embodiments are described in detail as follows:
as shown in fig. 1 to 3B, a first plasma reaction chamber 110 having a first reaction chamber 111; and a second plasma reaction chamber 210 disposed above the first plasma reaction chamber 110, wherein the second plasma reaction chamber 210 has a second reaction chamber 211 communicated with the first reaction chamber 111.
The first reaction chamber 111 and the second reaction chamber 211 are plasma reaction chambers configured to perform plasma reactions such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning … of a process chamber.
The first coil module 120 is disposed around the first reaction chamber 111 to provide high frequency electromagnetic wave energy for plasma reaction in the first reaction chamber 111. Similarly, the second coil module 220 is disposed around the second reaction chamber 211 to provide high frequency electromagnetic wave energy for plasma reaction in the second reaction chamber 211.
The first magnetic line shielding module 130 may have a plurality of shielding louvers 131, and a length d1 of each shielding louver is greater than or equal to a vertical height d2 of the first coil module, so as to effectively shield or reflect magnetic lines of force and/or electromagnetic wave energy of the first coil module 120.
Similarly, the second magnetic line shielding module 230 has a plurality of shielding louvers 131, and the length d1 of each shielding louver is greater than or equal to the vertical height d3 of the second coil module, so as to effectively shield or reflect the magnetic lines of force and/or electromagnetic wave energy of the second coil module 220.
As shown in fig. 4, the bottom of the shielding louver 131 of the first magnetic line shielding module 130 or the second magnetic line shielding module 230 has a louver gear 132, each louver gear 132 is slidably coupled to the gear row 141 of the gear disc 140, the gear disc 140 is slidably coupled to the slide rail 142, the gear row 141 is driven by the motor gear 152, such as the motor 151, and finally, the control unit 30 controls the motor 151 to rotate forward and backward, so as to open or close the shielding louver 131.
The first magnetic line shielding module 130 and the second magnetic line shielding module 230 are respectively disposed around the peripheries of the first coil module 120 and the second coil module 220, so as to respectively block and/or reflect the magnetic lines and/or electromagnetic waves of the first coil module 120 and the second coil module 220 from diffusing outwards, and control the shapes of the magnetic lines, thereby respectively changing the plasma energy of the first reaction chamber 111 and the second reaction chamber 211 and increasing the operation range.
As shown in fig. 5 to 7, the opening or closing of the shielding shutter 131 of the first magnetic line shielding module 130 or the second magnetic line shielding module 230 of the above embodiments can be controlled by the control unit 30. Further, according to the control mode, the control mode can be divided into the full area control 310, the 2-equal area control 320, the 4-equal area control 330 …, and the like.
As shown in fig. 5, the full-range control 310 synchronously adjusts all the blinds 131 to the same specific angle at the same time in a synchronous manner.
As shown in fig. 6, the 2-partition control 320 is to divide all the shielding louvers 131 into 2 groups 131a,131b, so that all the shielding louvers 131 in each group are synchronously adjusted to the same specific angle.
As shown in fig. 7, the 4-equal division control 330 divides all the shielding shutters 131 into 4 groups 131a,131b,131c, and 131d, so that all the shielding shutters 131 in each group are synchronously adjusted to the same specific angle.
In order to effectively prove the improved efficacy of the above embodiments, the second plasma reaction chamber 210 is taken as an example with the second magnetic line shielding module 230, and the following description is provided for the related simulations:
as shown in fig. 8, when the second flux shielding module 230 is not used, it is known from the characteristic curve L1 that, in the region a: when the second coil module 220 inputs lower power energy, a low power absorption effect will be generated, so that the plasma cannot be effectively maintained; also in the region B: when the second coil module 220 inputs higher power energy, it will easily cause partial damage.
When the second flux shield module 230 is used, it is known from the characteristic curve L2 that, in the region a: when the second coil module 220 inputs lower power energy, the plasma can be effectively maintained; also in the region B: when the second coil module 220 inputs higher power energy, it is less likely to cause partial damage.
As shown in fig. 9, the simulation with high neon in the second plasma reaction chamber 210 shows that the use of the second magnetic line shielding module 230 is important and the design must be added to optimize the magnetic field, when the second magnetic line shielding module 230 is not used (fig. 9a), the magnetic lines of force are outwardly divergent and the plasma density is low; however, if the second magnetic shielding module 230 is used (fig. 9b), the magnetic line converges toward the second reaction chamber 211 and the plasma density becomes high, i.e., the red intensity region increases.
As shown in fig. 10, it is known from the related simulation results that when the sizes of the second reaction chamber 211 are all 70mm, the plasma density of the second reaction chamber 211 is lower than that of the second magnetic shielding module 230 when the output power of the second coil module 220 is 300W or 400W, but the plasma density is not lower than that of the second reaction chamber 211 when the second magnetic shielding module 230 is not used, but the plasma density is not lower than that when the second magnetic shielding module 230 is used.
As shown in fig. 11, fig. 11(a) is a bottom view of the electric field intensity of the second reaction chamber 211, and fig. 11(b) is a graph of the magnetic flux density of the second reaction chamber 211, and it can be known from fig. 11(a) that when the left half of the second magnetic line shielding module 230 is in the open state and the right half of the second magnetic line shielding module 230 is in the closed state, the right half of the magnetic field is pushed inward, so that the magnetic flux density on the right side is higher than the magnetic flux density on the left side in fig. 11 (b).
As shown in fig. 12, fig. 12(a) is a bottom view of the electric field intensity of the second reaction chamber 211, and fig. 12(b) is a graph of the magnetic flux density of the second reaction chamber 211, and it can be known from fig. 12(a) that when the left half and the right half of the second magnetic line shielding modules 230 are both in an open state, the magnetic flux densities of the left side and the right side in fig. 12(b) are the same.
While the foregoing embodiments have been described in a specific context of preferred embodiments, it will be appreciated by those skilled in the art that the above-described embodiments are merely illustrative of the nature of the invention, which is not intended to limit the scope of the invention.
Claims (10)
1. An etching machine structure for controlling the magnetic field of a reaction chamber by shielding magnetic lines is characterized by comprising:
a first plasma reaction chamber having a first reaction chamber;
the first coil module is arranged around the periphery of the first reaction chamber; and
the first magnetic line shielding module is arranged around the periphery of the first coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the first coil module from diffusing outwards and controlling the shape of the magnetic lines.
2. The etcher structure of claim 1 wherein: the first magnetic line shielding module is provided with a plurality of shielding shutters, and the length of each shielding shutter is larger than or equal to the vertical height of the first coil module.
3. The etcher structure of claim 1 or 2, further comprising:
the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber;
the second coil module is arranged around the periphery of the second reaction chamber; and
and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
4. An etching machine structure for controlling the magnetic field of a reaction chamber by shielding magnetic lines is characterized by comprising:
a first plasma reaction chamber having a first reaction chamber;
the first coil module is arranged around the periphery of the first reaction chamber;
the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber;
the second coil module is arranged around the periphery of the second reaction chamber; and
and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
5. The etcher structure of claim 3 or 4, wherein: the second magnetic line shielding module is provided with a plurality of shielding shutters, and the length of each shielding shutter is greater than or equal to the vertical height of the second coil module.
6. The etcher structure of claim 2 or 5, wherein: wherein the opening or closing of the shutter is controlled by a control unit.
7. The etcher structure of claim 6 wherein: wherein the control unit performs full-area control on the shielding shutter.
8. The etcher structure of claim 6 wherein: wherein the control unit performs 2-equal division control on the shielding shutter.
9. The etcher structure of claim 6 wherein: wherein the control unit performs 4 equal division control on the shielding shutter.
10. The etcher structure of any one of claims 7 to 9, wherein: the bottom of the shielding shutter controlled by any one of the areas is provided with a shutter gear which is in sliding combination with the tooth row of the fluted disc, the fluted disc is in sliding combination with the slide rail, the tooth row of the fluted disc is driven by a motor gear of a motor, and the opening or closing of the shielding shutter is achieved under the condition that the control unit controls the motor to rotate forwards and backwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911073017.9A CN112768333A (en) | 2019-11-05 | 2019-11-05 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911073017.9A CN112768333A (en) | 2019-11-05 | 2019-11-05 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
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| CN112768333A true CN112768333A (en) | 2021-05-07 |
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| CN201911073017.9A Pending CN112768333A (en) | 2019-11-05 | 2019-11-05 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025044242A1 (en) * | 2023-08-25 | 2025-03-06 | 江苏鲁汶仪器股份有限公司 | Plasma etching machine and assistive electric field diameter changing device thereof |
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| US6071372A (en) * | 1997-06-05 | 2000-06-06 | Applied Materials, Inc. | RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
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