CN112736206A - White light OLED device structure - Google Patents
White light OLED device structure Download PDFInfo
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- CN112736206A CN112736206A CN202011560858.5A CN202011560858A CN112736206A CN 112736206 A CN112736206 A CN 112736206A CN 202011560858 A CN202011560858 A CN 202011560858A CN 112736206 A CN112736206 A CN 112736206A
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- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 230000005525 hole transport Effects 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 35
- 230000005540 biological transmission Effects 0.000 claims description 29
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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Abstract
The invention discloses a white light OLED device structure, which sequentially comprises the following components from bottom to top: the light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, a two-component mixed electron transport layer/hole blocking layer, an electron injection layer, a cathode and a capping layer; the light-emitting layer comprises a yellow light-emitting layer, a blue light-emitting layer and a blue light compensation layer; the invention further improves the luminous efficiency and the service life of the device by compensating the blue luminous layer on the basis of the simple single device of B + Y; under the condition of not increasing driving voltage, the brightness of the white light device is further improved, and the white light device can be applied to various series of optical waveguide products.
Description
Technical Field
The invention belongs to the field of OLED devices, and particularly relates to a white light OLED device structure.
Background
Compared with the traditional AMOLED display technology, the silicon-based OLED micro-display takes the monocrystalline silicon chip as the substrate, and the pixel size is smaller and the integration level is higher by means of the mature CMOS process, so that the silicon-based OLED micro-display can be manufactured into a near-to-eye display product which is comparable to large-screen display and is widely concerned. Based on the technical advantages and wide market, in the fields of military and consumer electronics, the silicon-based OLED micro-display will raise the new wave of near-to-eye display, and bring unprecedented visual experience for users.
Silicon-based OLEDs are widely used in the VR/AR field, where most of the AR glasses use optical waveguide technology, whether diffractive or geometric,
light is lost in a large proportion, even more than 90%, during coupling into and out of the waveguide and transmission; in order to satisfy the brightness requirement of the display, i.e., the requirement of the body of the light emitting unit to have higher brightness, the device has to have higher efficiency and brightness in the silicon-based OLED.
The white light in the silicon-based OLED is difficult to realize by RGB combination in a side by side manner, a device structure is usually directly designed, and white luminescence is realized by common mask evaporation. The common white light device structure mainly comprises a single device combining blue and yellow light-emitting layers and a tandem device combining red, green and blue light-emitting layers. The Single white light composed of the EML-B and the EML-Y has a simple structure, is easy to realize white light, but has poor efficiency and service life; while the Tandem structure can increase the efficiency and brightness of the white light device, the driving voltage is also increased synchronously, which increases the power consumption of the product.
Disclosure of Invention
In order to solve the technical problems, the invention provides a white light OLED device structure, and the luminous efficiency and the service life of a product can be effectively improved by additionally arranging a blue light compensation layer.
The technical scheme adopted by the invention is as follows:
a white light OLED device structure comprises the following components in sequence from bottom to top: the light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, a two-component mixed electron transport layer/hole blocking layer, an electron injection layer, a cathode and a capping layer; the light-emitting layer comprises a yellow light-emitting layer, a blue light-emitting layer and a blue light compensation layer.
Further, the yellow light-emitting layer and the blue light-emitting layer may be made of the same host material or host materials having close HOMO energy levels.
Furthermore, the thicknesses of the yellow light emitting layer and the blue light emitting layer are both 15-25 nm.
Further, the thickness of the blue light compensation layer is 10-20 nm.
Further, the thickness of the transmission connection layer is 40-60 nm, and preferably 40 nm.
Further, the host material of the transport connection layer is a bipolar (P-N) transport material to reduce the transport barrier of electrons and holes.
Further, the yellow light emitting layer and the blue light emitting layer in the light emitting layers can be replaced by a mixed light emitting layer of yellow light and blue light.
In one scheme of the invention, the light-emitting layer sequentially comprises a yellow light-emitting layer, a blue light-emitting layer, a transmission connecting layer and a blue light compensation layer from bottom to top; the yellow light emitting layer is stacked on the hole transport layer, and the blue light compensation layer is stacked under the two-component mixed electron transport layer/hole blocking layer.
Further, the blue light compensation layer B-Host is made of a bias electron (N type) fluorescent main body material, and the doping concentration is controlled to be 3% -5%, preferably 5%.
In another scheme of the invention, the light-emitting layer sequentially comprises a blue light compensation layer, a transmission connecting layer, a yellow light-emitting layer and a blue light-emitting layer from bottom to top; the blue light compensation layer is stacked on the hole transport layer, and the blue light emitting layer is stacked under the two-component mixed electron transport layer/hole blocking layer.
Further, the main body material of the blue light compensation layer is a bias hole type (P type) fluorescent material, and the doping concentration is controlled to be 3% -5%, preferably 5%;
in another scheme of the invention, the light-emitting layer sequentially comprises a mixed light-emitting layer of yellow light and blue light, a transmission connecting layer and a blue light compensation layer from bottom to top; the mixed luminescent layer of the yellow light and the blue light is laminated on the hole transport layer, and the blue light compensation layer is laminated under the two-component mixed electron transport layer/hole blocking layer.
Further, the main body material of the mixed luminescent layer of the yellow light and the blue light is codoped by Y-dot, B-dot and host, wherein the doping concentration of the Y-dot is controlled to be 2% -5%, and the doping concentration of the B-dot is controlled to be 1% -3%; the thickness of the mixed luminescent layer of the yellow light and the blue light is 20-30 nm.
Further, the blue light compensation layer B-Host is made of a bias electron (N type) fluorescent main body material, and the doping concentration is controlled to be 3% -5%, preferably 5%.
In the technical scheme provided by the invention, on the basis of a simple single device of B + Y, the transmission connecting layer is connected with the compensation blue light-emitting layer, the types of the materials of the light-emitting layers are all fluorescent materials, and the doping ratio of the fluorescent materials is limited to control the distribution of excitons in the composite region and the position of light emission, so that the white light with better color purity is realized, the light-emitting efficiency of the device is further improved, and the service life of the device is prolonged; under the condition of not increasing driving voltage, the brightness of the white light device is further improved, and the white light device can be applied to various series of optical waveguide products.
Drawings
FIG. 1 is a structural view of a white OLED device in example 1;
FIG. 2 is a structural view of a white OLED device in example 2;
FIG. 3 is a structural view of a white OLED device in example 3;
in the figure, a 1-anode, a 2-hole injection layer, a 3-hole transmission layer, a 4-luminous layer, a 4-1-yellow luminous layer, a 4-2-blue luminous layer, a 4-3-transmission connecting layer, a 4-4-blue light compensation layer, a 4-5-yellow and blue light mixed luminous layer, a 5-two-component mixed electron transmission layer/hole blocking layer, a 6-electron injection layer, a 7-cathode, an 8-capping layer and the like are arranged in sequence.
Detailed Description
The present invention will be described in detail with reference to examples.
Example 1
A white light OLED device structure sequentially comprises from bottom to top: the light-emitting diode comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a light-emitting layer 4, a two-component mixed electron transport layer/hole blocking layer 5, an electron injection layer 6, a cathode 7 and a capping layer 8; the light-emitting layer 4 comprises a yellow light-emitting layer 4-1, a blue light-emitting layer 4-2 and a blue light compensation layer 4-4; the light-emitting layer 4 sequentially comprises a yellow light-emitting layer 4-1, a blue light-emitting layer 4-2, a transmission connecting layer 4-3 and a blue light compensation layer 4-4 from bottom to top; the yellow light emitting layer 4-1 is laminated on the hole transport layer 3, and the blue light compensation layer 4-4 is laminated below the two-component mixed electron transport layer/hole blocking layer 5;
the B-Host of the blue light compensation layer 4-4 is a bias electron (N type) fluorescent main body material, and the doping concentration is controlled to be 3% -5%, preferably 5%; the thickness of the blue light compensation layer is 10-20 nm;
the yellow light-emitting layer 4-1 and the blue light-emitting layer 4-2 can be made of the same host material or host materials with approximate HOMO energy levels;
the thicknesses of the yellow light emitting layer 4-1 and the blue light emitting layer 4-2 are both 15-25 nm;
the thickness of the transmission connecting layer 4-3 is 40-60 nm, and preferably 40 nm; the host material of the transmission connecting layer 4-3 is a bipolar (P-N) transmission material so as to reduce the transmission barrier of electrons and holes.
Example 2
A white light OLED device structure sequentially comprises from bottom to top: the light-emitting diode comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a light-emitting layer 4, a two-component mixed electron transport layer/hole blocking layer 5, an electron injection layer 6, a cathode 7 and a capping layer 8; the light-emitting layer 4 comprises a yellow light-emitting layer 4-1, a blue light-emitting layer 4-2 and a blue light compensation layer 4-4; the light-emitting layer 4 sequentially comprises a blue light compensation layer 4-4, a transmission connecting layer 4-3, a yellow light-emitting layer 4-1 and a blue light-emitting layer 4-2 from bottom to top; the blue light compensation layer 4-4 is stacked on the hole transport layer 3, and the blue light emitting layer 4-2 is stacked below the two-component mixed electron transport layer/hole blocking layer 5;
the main body material of the blue light compensation layer 4-4 is a bias hole type fluorescent material, and the doping concentration is controlled to be 3% -5%, preferably 5%;
the thickness of the blue light compensation layer 4-4 is 10-20 nm;
the yellow light-emitting layer 4-1 and the blue light-emitting layer 4-2 can be made of the same host material or host materials with approximate HOMO energy levels;
the thicknesses of the yellow light emitting layer 4-1 and the blue light emitting layer 4-2 are both 15-25 nm;
the thickness of the transmission connecting layer 4-3 is 40-60 nm, and preferably 40 nm; the host material of the transmission connecting layer 4-3 is a bipolar (P-N) transmission material so as to reduce the transmission barrier of electrons and holes.
Example 3
A white light OLED device structure sequentially comprises from bottom to top: the light-emitting diode comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a light-emitting layer 4, a two-component mixed electron transport layer/hole blocking layer 5, an electron injection layer 6, a cathode 7 and a capping layer 8; the light-emitting layer 4 comprises a mixed light-emitting layer 4-5 of yellow light and blue light and a blue light compensation layer 4-4; the light-emitting layer 4 sequentially comprises a mixed light-emitting layer 4-5 of yellow light and blue light, a transmission connecting layer 4-3 and a blue light compensation layer 4-4 from bottom to top; the mixed luminescent layer 4-5 of the yellow light and the blue light is laminated on the hole transport layer 3, and the blue light compensation layer 4-4 is laminated under the two-component mixed electron transport layer/hole blocking layer 5;
the B-Host of the blue light compensation layer 4-4 is a bias electron (N type) fluorescent main body material, and the doping concentration is controlled to be 3% -5%, preferably 5%;
the thickness of the blue light compensation layer 4-4 is 10-20 nm;
the main body material of the mixed luminescent layer 4-5 of the yellow light and the blue light is codoped by Y-dot, B-dot and host, wherein the doping concentration of the Y-dot is controlled to be 2% -5%, and the doping concentration of the B-dot is controlled to be 1% -3%;
the thickness of the mixed luminescent layer 4-5 of the yellow light and the blue light is 20-30 nm;
the thickness of the transmission connecting layer 4-3 is 40-60 nm, and preferably 40 nm;
the host material of the transmission connecting layer 4-3 is a bipolar (P-N) transmission material so as to reduce the transmission barrier of electrons and holes.
The above detailed description of a white OLED device structure with reference to embodiments is illustrative and not restrictive, and several embodiments may be enumerated within the scope thereof, so that changes and modifications may be made without departing from the general inventive concept and the scope thereof is intended to be protected.
Claims (10)
1. The white light OLED device structure is characterized by sequentially comprising the following components from bottom to top: the light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, a two-component mixed electron transport layer/hole blocking layer, an electron injection layer, a cathode and a capping layer; the light-emitting layer comprises a yellow light-emitting layer, a blue light-emitting layer and a blue light compensation layer.
2. The white OLED device structure of claim 1 wherein the yellow and blue light-emitting layers of the light-emitting layer can be replaced with a mixed yellow and blue light-emitting layer.
3. The white OLED device structure of claim 1, wherein the light-emitting layer comprises a yellow light-emitting layer, a blue light-emitting layer, a transmission connection layer and a blue light compensation layer in sequence from bottom to top; the yellow light emitting layer is stacked on the hole transport layer, and the blue light compensation layer is stacked under the two-component mixed electron transport layer/hole blocking layer.
4. The white OLED device structure of claim 1, wherein the light emitting layer comprises a blue light compensation layer, a transmission connection layer, a yellow light emitting layer and a blue light emitting layer in sequence from bottom to top; the blue light compensation layer is stacked on the hole transport layer, and the blue light emitting layer is stacked under the two-component mixed electron transport layer/hole blocking layer.
5. The white OLED device structure of claim 1, wherein the light emitting layer comprises a mixed light emitting layer of yellow light and blue light, a transmission connection layer and a blue light compensation layer in sequence from bottom to top; the mixed luminescent layer of the yellow light and the blue light is laminated on the hole transport layer, and the blue light compensation layer is laminated under the two-component mixed electron transport layer/hole blocking layer.
6. The white OLED device structure of claim 2, 3 or 5, wherein the blue light compensation layer B-Host is made of a fluorescent Host material with a bias electron, and the doping concentration is controlled to be 3-5%; the thickness of the blue light compensation layer is 10-20 nm.
7. The white OLED device structure of claim 4, wherein the host material of the blue light compensation layer is a hole bias type fluorescent material, and the doping concentration is controlled to be 3-5%; the thickness of the blue light compensation layer is 10-20 nm.
8. The white OLED device structure of claims 1, 3, 4 and 7 wherein the yellow and blue light emitting layers are selected from the same host material or host materials with close HOMO levels; the thicknesses of the yellow light emitting layer and the blue light emitting layer are both 15-25 nm.
9. The white OLED device structure of claim 2, wherein the host material of the mixed yellow and blue light emitting layer is co-doped with Y-dots, B-dots and host, wherein the doping concentration of Y-dots is controlled to be 2-5% and the doping concentration of B-dots is controlled to be 1-3%; the thickness of the mixed luminescent layer of the yellow light and the blue light is 20-30 nm.
10. The white OLED device structure of any one of claims 3-5, wherein the transmission connection layer has a thickness of 40 to 60 nm; the main material of the transmission connecting layer is a bipolar transmission material.
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2020
- 2020-12-25 CN CN202011560858.5A patent/CN112736206A/en active Pending
Patent Citations (11)
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|---|---|---|---|---|
| US20040009367A1 (en) * | 2002-07-08 | 2004-01-15 | Eastman Kodak Company | White organic light-emitting devices using rubrene layer |
| JP2004063209A (en) * | 2002-07-26 | 2004-02-26 | Matsushita Electric Works Ltd | White organic electroluminescent device |
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