CN112736202B - Method for improving wettability between perovskite ink and electrical transmission layer and application thereof - Google Patents
Method for improving wettability between perovskite ink and electrical transmission layer and application thereof Download PDFInfo
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Abstract
The invention discloses a method for improving wettability between perovskite ink and an electrical transmission layer and application thereof. The method for improving the wettability between the perovskite ink and the electrical transmission layer comprises the following steps: forming a metal halide layer with the thickness not more than 10nm on the electric transmission layer in advance, and coating perovskite ink on the metal halide layer, wherein the metal halide is a precursor material for forming the perovskite ink. The method has low process difficulty and cost, can obviously improve the wettability between the perovskite ink and the electrical transmission layer on the premise of not affecting the electrical transmission performance between the perovskite film layer and the electrical transmission layer, and can be used for preparing the perovskite battery to improve the comprehensive performance of the perovskite battery.
Description
Technical Field
The invention belongs to the field of perovskite batteries, and particularly relates to a method for improving wettability between perovskite ink and an electrical transmission layer and application thereof.
Background
Perovskite solar cells are receiving a great deal of attention due to their constantly refreshed conversion efficiency, and industrial research is also being conducted. The structural general formula of the photovoltaic perovskite material can be written as ABX 3 Wherein the A position is positively charged organic group (such as methyl amine group, formamidine group) or cation (such as cesium ion, rubidium ion, etc.), the B position is lead or tin ion, and the X position is halogen ion (such as chlorine, bromine, iodine ion, etc.). Generally, a perovskite cell can be divided into 5 layers, including an upper electrode layer, an upper electrically conductive layer, a perovskite light absorbing layer, a lower electrically conductive layer, and a lower electrode layer. Based on the formed battery being a single-cellStill further, the substrate of the perovskite cell may be transparent glass or other solar cells, such as silicon cells, etc.
In the industrialization process, the solution method for preparing perovskite is paid attention to because of low cost and high yield, wherein one key technology to be solved is to fully infiltrate perovskite ink on the lower electrical transmission layer, so as to achieve the purposes of uniformly crystallizing perovskite and completely covering the lower electrical transmission layer. However, perovskite inks often do not wet sufficiently due to the too low surface energy of the underlying electrical transport layer.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present invention is to provide a method for improving wettability between perovskite ink and an electrical transport layer and application thereof.
The present application is mainly based on the following problems:
to solve the wettability problem of perovskite ink, there is a method of doctor-blading a nanoparticle (such as SiO 2 ) A method for increasing the surface energy of the lower electrical transport layer and thus increasing the wettability of the perovskite ink, however, the method has the following disadvantages: firstly, the preparation of nano-scale particles is difficult, so that the material cost is increased; secondly, most of nano-scale particles are ceramic materials such as metal oxide, the conductivity is generally poor, and the intermediate layer serving as a perovskite film layer and a lower electrical transmission layer is likely to cause weakening or even loss of conductivity, so that the perovskite solar cell is invalid; thirdly, the knife coating process leads to the need of fully dispersing nano-scale particles in a solvent, and the small particle size can lead to serious material agglomeration phenomenon, thereby further increasing the process difficulty and the process cost.
Therefore, according to the first aspect of the present invention, a method for improving wettability between perovskite ink and an electrical transport layer is provided to solve the problem that the perovskite ink cannot sufficiently infiltrate the electrical transport layer. To achieve this object, according to an embodiment of the invention, the method comprises:
forming a metal halide layer with the thickness not more than 10nm on the electric transmission layer in advance, and coating perovskite ink on the metal halide layer, wherein the metal halide is a precursor material for forming the perovskite ink.
Further, the metal halide is BX 2 B is lead element or/and tin element, X is halogen element.
Further, the electrical transport layer is a hole transport layer or an electron transport layer.
Further, the thickness of the metal halide layer is 1 to 8nm.
Further, the metal halide layer is obtained by adopting a wet preparation process or a dry preparation process, wherein the dry preparation process is an evaporation method, a sputtering method or an atomic deposition method, and the wet preparation process is a spin coating method, a blade coating method or a slit coating method.
Further, the metal halide layer further comprises: a first dense layer and a second dense layer, the first dense layer formed on the electrical transport layer; the second dense layer is formed on the first dense layer, and the density of the first dense layer is greater than that of the second dense layer.
Further, the thickness of the first compact layer is 0.1-3 nm, and the thickness of the second compact layer is 0.5-8 nm.
Further, the metal halide layer is formed by vapor deposition, and the vapor deposition rate of the first compact layer isThe evaporation rate of the second compact layer is +.>
Compared with the prior art, the method for improving the wettability between the perovskite ink and the electrical transmission layer has at least the following advantages: 1. by prefabricating an extremely thin metal halide layer on the surface of the electric transmission layer as a seed crystal layer, the metal halide layer is spontaneously converted into a perovskite material in the subsequent perovskite ink coating process, so that the infiltration effect of the perovskite ink on the electric transmission layer can be remarkably improved by utilizing the reaction of the seed crystal layer and the perovskite ink, and the seed crystal layer can be reacted with the perovskite ink to form perovskite, so that the weakening and losing of the electric transmission performance between the perovskite film layer and the electric transmission layer can be effectively avoided; 2. compared with the process of scraping nano particles on the electric transmission layer, the metal halide film layer is formed in the invention, so that the requirements on the size, the dispersibility and the like of the precursor are smaller or no requirements are required; 3. because the seed crystal layer is extremely thin, even if the composition of the existing perovskite ink is not changed, the skeleton structure, the light absorption performance and the like of the formed perovskite film layer are not obviously changed. In conclusion, the method is low in process difficulty and cost, and the wettability between the perovskite ink and the electrical transmission layer can be obviously improved on the premise that the electrical transmission performance between the perovskite film layer and the electrical transmission layer is not affected.
Another object of the present invention is to propose a method of manufacturing a perovskite battery to further improve the photoelectric conversion efficiency of the perovskite battery. In order to achieve the above object, according to a second aspect of the present invention, there is provided a method for manufacturing a perovskite battery, wherein in a manufacturing process of the perovskite battery, a perovskite light absorbing layer is formed on a lower electrical transport layer by using the method for improving wettability between perovskite ink and electrical transport layer.
Compared with the prior art, the method for preparing the perovskite battery can enable the perovskite light absorption layer to be tightly attached to the lower electrical transmission layer, can greatly reduce the probability of holes of the perovskite battery, and can not influence the electrical transmission performance between the perovskite light absorption layer and the lower electrical transmission layer, so that the perovskite battery has better photoelectric conversion efficiency.
Another object of the present invention is to propose a perovskite solar cell to improve the overall performance of the perovskite solar cell. In order to achieve the above object, according to a third aspect of the present invention, there is provided a perovskite solar cell obtained by the above-described production method according to an embodiment of the present invention. Compared with the prior art, the perovskite solar cell has higher photoelectric conversion efficiency.
Another object of the present invention is to provide an energy storage device to improve energy utilization. In order to achieve the above object, according to a fourth aspect of the present invention, there is provided an energy storage device comprising the perovskite battery or the perovskite battery obtained by the above manufacturing method according to an embodiment of the present invention. Compared with the prior art, the energy storage device can convert light energy into electric energy and store the electric energy for use, so that the combination of solar energy storage and power generation is realized, and the energy utilization rate is improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a method for improving the wettability between a perovskite ink and an electrical transport layer according to one embodiment of the invention.
FIG. 2 is a flow chart of a method for improving wettability between a perovskite ink and an electrically conductive layer according to yet another embodiment of the invention.
Fig. 3 is a flow chart of a method of making a perovskite battery according to one embodiment of the invention.
Fig. 4 is a schematic structural view of a perovskite battery according to one embodiment of the invention.
Fig. 5 is a SEM comparison of the cross-sections of perovskite battery samples obtained in the experimental group 1 and the control group according to the present invention, and (a) in fig. 5 is a SEM of the cross-section of the sample in the experimental group 1 and (b) in fig. 5 is a SEM of the cross-section of the sample in the control group.
Fig. 6 is an SEM image of a cross section of a perovskite battery sample obtained in experimental group 2 of the present invention.
Fig. 7 is a graph comparing volt-ampere characteristics of perovskite cell assemblies obtained in the experimental group 1 and the control group of the present invention.
Reference numerals: 1-a substrate; 2-a lower electrode; 3-a lower electrical transport layer; 4-perovskite film layer; 5-applying an electrical transport layer; 6-upper electrode.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
According to a first aspect of the present invention, a method of improving wettability between a perovskite ink and an electrical transport layer is provided. As shown in fig. 1, according to an embodiment of the present invention, the method includes: forming a metal halide layer with the thickness not more than 10nm on the electric transmission layer in advance, and coating perovskite ink on the metal halide layer, wherein the metal halide is a precursor material for forming the perovskite ink. The method has low process difficulty and cost, can obviously improve the wettability between the perovskite ink and the electrical transmission layer on the premise of not affecting the electrical transmission performance between the perovskite film layer and the electrical transmission layer, and can be widely used for preparing perovskite batteries. The method for improving wettability between perovskite ink and an electrical transport layer according to the above embodiment of the present invention will be described in detail with reference to fig. 1 to 2.
According to one embodiment of the invention, the metal halide may be BX 2 Wherein B may be a lead element or/and a tin element, and X may be a halogen element, etc., and BX may be 2 The composition depends on the perovskite composition used, for example when the perovskite film layer material is CH 3 NH 3 PbI 3 When the metal halide is PbI 2 . Wherein, the structural general formula of the perovskite material in the perovskite ink can be written as ABX 3 The A position is positively charged organic group (such as methyl amine group, formamidine group) or cation (such as cesium ion, rubidium ion, etc.), the B position is lead or tin ion, and the X position is halogen ion (such as chlorine, bromine, iodine ion, etc.).
According to the examples of the present invention, the inventors found that perovskite was prepared in the prior artIn the process of the battery, BX is preformed 2 A solution in which a layer is reacted with a subsequent AX as a precursor to give a perovskite layer, but in this solution BX 2 The layer being part of the perovskite layer material to form the framework of the perovskite layer, BX for facilitating the ingress of subsequent precursors 2 The layer is thicker (hundreds of nanometers) and has loose and porous structure. And BX formed in the present invention 2 The layer is actually a very thin (no more than 10 nanometers) compact layer, and the effect of the layer is to completely cover the electrical transmission layer, when the perovskite film layer with the thickness of hundreds of nanometers is prepared, the extremely thin BX is additionally preset before the perovskite film layer is formed 2 Dense layer, increase BX 2 The uniform covering effect of the electrical transmission layer can be utilized not only by BX 2 Reaction with AX in perovskite ink to significantly improve the wetting effect of perovskite ink on the electrical transport layer, and due to BX 2 Reacts with AX to form perovskite, can effectively avoid weakening and losing of the electrical transmission performance between the perovskite film layer and the electrical transmission layer, and simultaneously, due to BX 2 The perovskite ink has extremely thin layer, has little consumption of AX in the perovskite ink, and can not obviously change the skeleton structure, the light absorption performance and the like of the formed perovskite film layer even if the composition of the existing perovskite ink is not changed.
According to one embodiment of the present invention, the type of the electrical transport layer is not particularly limited, and a person skilled in the art may select the electrical transport layer according to practical needs, for example, the electrical transport layer may be a hole transport layer or an electron transport layer, specifically, the hole transport layer or the electron transport layer may be selected as the lower electrical transport layer of the perovskite battery, and an extremely thin BX layer is formed on the lower electrical transport layer in advance 2 The perovskite ink is coated on the layer to form a light absorption layer, so that the wettability of the perovskite ink on an electric transmission layer under the perovskite battery is obviously improved.
According to still another embodiment of the present invention, the preparation process of the metal halide layer is not particularly limited, and a person skilled in the art may choose according to actual needs, for example, a wet preparation process may be selected, or a dry preparation process may be selected, wherein the wet preparation process may be a spin coating method, a doctor blade method, a slit coating method, or the like, and the dry preparation process may be an evaporation method, a sputtering method, an atomic deposition method, or the like. Preferably, a dry preparation process can be selected, so that the thickness and the density of the metal halide layer can be controlled more favorably, and the uniform covering effect of the metal halide on the electric transmission layer can be improved.
According to still another embodiment of the present invention, the thickness of the metal halide layer is not more than 10nm, for example, 0.1nm, 0.5nm, 1nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, 6nm, 7nm, 8nm, 9nm or 10nm, etc., and the inventors found that the wetting effect between the perovskite ink and the electrical transport layer can be significantly improved when the thickness of the metal halide layer is about 1 nm; when the thickness of the metal halide layer is too thick, the metal halide in the metal halide layer may not be completely converted into perovskite, but the metal halide is non-conductive, so that conductivity between the perovskite film layer and the electrical property transmission layer is greatly reduced or even lost, and efficiency of the perovskite battery is remarkably reduced or even lost when the perovskite battery is used in the perovskite battery. Preferably, the thickness of the metal halide layer may be 1 to 8nm, more preferably, 1 to 5nm, whereby not only sufficient wetting of the electrical transport layer by the perovskite ink may be ensured, but also adverse effects of the thickness of the metal halide layer on conductivity may be further avoided, while also reducing the raw material cost.
According to yet another embodiment of the present invention, the metal halide layer may further include: the invention provides a perovskite ink, which comprises a first dense layer and a second dense layer, wherein the first dense layer is formed on an electric transmission layer, the second dense layer is formed on the first dense layer, the density of the first dense layer is higher than that of the second dense layer, the inventor finds that the higher the density of the metal halide layer is, the better the filling and covering effect of the perovskite ink on the surface of the electric transmission layer is, the more fully soaking of perovskite ink on the surface of the electric transmission layer is also realized, but if the density and the thickness of the metal halide layer are both higher, the infiltration of the perovskite ink into the metal halide layer is not facilitated, the metal halide on one side close to the electric transmission layer reacts with the inside of the metal halide layer, the problem that the conductivity between the perovskite film layer and the electric transmission layer is influenced due to the fact that part of metal halide cannot be converted into perovskite material can occur, and the ingenious design of the first dense layer and the second dense layer can be utilized, the metal halide on the surface of the electric transmission layer has better filling effect, and the relatively loose second layer can be utilized to realize the infiltration of the perovskite ink into the perovskite ink, so that the problem that the effect of the perovskite ink between the metal halide layer and the electric transmission layer is fully influenced due to the fact that the thickness of the metal halide layer is greater than the electric transmission layer is provided.
According to a further embodiment of the present invention, the relative thickness of the first dense layer and the second dense layer is not strictly limited, for example, the thickness of the first dense layer may be not greater than the thickness of the second dense layer, or may be smaller than the thickness of the second dense layer, where the purpose of the first dense layer is to make the metal halide better contact with the transport layer, and the purpose of the second dense layer is to promote the contact reaction between the perovskite ink and the metal halide, on the one hand, and on the other hand, the preparation efficiency may be improved, the preparation time may be saved, for example, a faster evaporation speed may be selected when the second dense layer with relatively smaller density is prepared by an evaporation method, and the evaporation time may be saved. From the aspects of preparation efficiency and better contact of the metal halide with the transport layer, the thickness of the first dense layer can be not greater than that of the second dense layer, so that the metal halide layer in the metal halide layer is promoted to be completely converted into perovskite material, and better conductivity between the perovskite film layer and the electrical property transport layer is ensured. Further, the thickness of the first dense layer may be 0.1 to 3nm, for example, 0.1nm, 0.2nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 2nm, 2.5nm, or 3nm, etc., and the thickness of the second dense layer may be 0.5 to 8nm, for example, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, 6nm, 7nm, 8nm, etc., whereby the problem of affecting the conductivity between the perovskite film layer and the electric property transmission layer due to the greater density and/or greater thickness of the metal halide layer can be further avoided.
According to yet another embodiment of the present invention, the metal halide layer may be formed by vapor deposition, wherein the vapor deposition rate of the first dense layer may beFor example, it may be +.>Or->Etc., the evaporation rate of the second dense layer may be +.>For example, it may be +.> Or->And the inventors found that by controlling the above vapor deposition rate, not only can the first dense layer and the second dense layer be ensured to have suitable densities, so that the effect of the perovskite ink on the electrical transport layer can be significantly improved on the basis of ensuring good conductivity between the perovskite film layer and the electrical transport layer, but also the vapor deposition time of the second dense layer can be shortened, and the preparation efficiency of the whole metal halide layer can be improved. In addition, the thickness of the first dense layer and the second dense layer can be controlled by simultaneously controlling the vapor deposition rate and the vapor deposition time.
Compared with the prior art, the method for improving the wettability between the perovskite ink and the electrical transmission layer has at least the following advantages: 1. by prefabricating an extremely thin metal halide layer on the surface of the electric transmission layer as a seed crystal layer, the metal halide layer is spontaneously converted into a perovskite material in the subsequent perovskite ink coating process, so that the infiltration effect of the perovskite ink on the electric transmission layer can be remarkably improved by utilizing the reaction of the seed crystal layer and the perovskite ink, and the seed crystal layer can be reacted with the perovskite ink to form perovskite, so that the weakening and losing of the electric transmission performance between the perovskite film layer and the electric transmission layer can be effectively avoided; 2. compared with the process of scraping nano particles on the electric transmission layer, the metal halide film layer is formed in the invention, so that the requirements on the size, the dispersibility and the like of the precursor are smaller or no requirements are required; 3. because the seed crystal layer is extremely thin, even if the composition of the existing perovskite ink is not changed, the skeleton structure, the light absorption performance and the like of the formed perovskite film layer are not obviously changed. In conclusion, the method is low in process difficulty and cost, and the wettability between the perovskite ink and the electrical transmission layer can be obviously improved on the premise that the electrical transmission performance between the perovskite film layer and the electrical transmission layer is not affected.
According to a second aspect of the present invention, a method for preparing a perovskite battery is provided, wherein in a preparation process of the perovskite battery, a perovskite light absorption layer is formed on a lower electrical transmission layer by adopting the method for improving wettability between perovskite ink and electrical transmission layer. Compared with the prior art, the method can not only enable the adhesion of the perovskite light absorption layer and the lower electrical transmission layer to be tighter, but also greatly reduce the probability of holes of the perovskite battery, and meanwhile, the electrical transmission performance between the perovskite light absorption layer and the lower electrical transmission layer can not be influenced, so that the perovskite battery has better photoelectric conversion efficiency. It should be noted that the features and effects described in the above method for improving wettability between perovskite ink and electrical transmission layer are also applicable to the method for preparing perovskite battery, and are not described here again.
According to an embodiment of the present invention, referring to fig. 3 and 4, a method of preparing a perovskite battery may specifically include: sequentially depositing a lower electrode on a substrate,A lower electrical transport layer, a metal halide layer having a thickness of not more than 10nm (e.g. BX 2 ) The perovskite type solar cell comprises a perovskite layer, an upper electrical transmission layer and an upper electrode, wherein when the perovskite battery is a single battery, the substrate can be transparent glass or transparent plastic, and when the perovskite battery is a plurality of batteries, the substrate can be other batteries such as a silicon battery; the lower electrode can be transparent conductive film, and the lower electric transmission layer can be hole transmission layer or electron transmission layer, BX 2 The composition depends on the perovskite composition used, for example when the perovskite film material is CH 3 NH 3 PbI 3 When the seed crystal layer is PbI 2 The method comprises the steps of carrying out a first treatment on the surface of the Wherein when the metal halide layer (in BX 2 For example), upon preparation of a perovskite layer thereon using a perovskite ink, the following reaction will occur: AX+BX 2 ＝ABX 3 By CH 3 NH 3 PbI 3 Perovskite is exemplified by the reaction occurring as CH 3 NH 3 I+PbI 2 ＝CH 3 NH 3 PbI 3 Thus, the perovskite film layer can be formed on BX 2 On the basis, the perovskite ink grows, and then the problem of wettability of the perovskite ink is solved. At the same time, the seed crystal layer is extremely thin and contains BX 2 The content is very low, and corresponding perovskite crystals can be produced by easy reaction when the perovskite film layer is prepared by the subsequent perovskite ink, so that the electrical transmission performance of the lower electrical transmission layer pair and the perovskite film layer is avoided.
According to a third aspect of the invention, the invention proposes a perovskite solar cell, which is obtained according to an embodiment of the invention using the preparation method described above. According to one specific example of the present invention, referring to fig. 4, the perovskite battery may include a substrate and a lower electrode 2, a lower electrical transport layer 3, a perovskite film layer 4 (i.e., a light absorbing layer), an upper electrical transport layer 5, and an upper electrode 6 sequentially deposited on the substrate 1, wherein the lower electrode may be a hole transport layer or an electron transport layer. Compared with the prior art, the perovskite solar cell has higher photoelectric conversion efficiency. It should be noted that the features and effects described in the above method for preparing a perovskite battery are also applicable to a perovskite battery, and are not described in detail herein.
According to a fourth aspect of the present invention, an energy storage device is provided, which according to an embodiment of the present invention comprises a perovskite battery as described above or a perovskite battery obtained by the above preparation method. Compared with the prior art, the energy storage device can convert light energy into electric energy and store the electric energy for use, so that the combination of solar energy storage and power generation is realized, and the energy utilization rate is improved. It should be noted that the features and effects described in the above perovskite battery and the method for preparing the perovskite battery are also applicable to the energy storage device, and are not described herein in detail.
The scheme of the present invention will be explained below with reference to examples. It will be appreciated by those skilled in the art that the following examples are illustrative of the present invention and should not be construed as limiting the scope of the invention. The examples are not to be construed as limiting the specific techniques or conditions described in the literature in this field or as per the specifications of the product. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
Examples
Depositing a lower electrode, a lower electrical transport layer, and a metal halide layer having a thickness of not more than 10nm (e.g. BX) 2 ) A perovskite layer, an upper electrical transport layer and an upper electrode:
(1) And taking FTO conductive glass (namely fluorine doped tin oxide conductive glass) with proper size as a substrate and a lower electrode for cleaning, and depositing nickel oxide on the substrate to serve as a lower electrical transmission layer.
(2) Experimental group 1A lead iodide seed crystal layer is deposited on nickel oxide by thermal evaporation, the method comprises vacuumizing the thermal evaporation cavity to 10 -5 Pa, and then adjusting the current so that the rate of vapor deposition of lead iodide is maintained atEvaporating 0.2nm, followed by +.>And evaporating at a rate of 0.8nm to obtain a lead iodide seed layer with a total thickness of 1 nm.
Experiment group 2A lead iodide seed crystal layer is deposited on nickel oxide by thermal evaporation, the method comprises vacuumizing the thermal evaporation cavity to 10 -5 Pa, and then adjusting the current so that the rate of vapor deposition of lead iodide is maintained atEvaporating 0.2nm, followed by +.>4.8nm, and obtaining lead iodide seed crystal layer with total thickness of 5 nm.
The control group did not perform any treatment.
(3) Then, perovskite inks (CH) were applied to the experimental groups 1 to 2 and the control group under the same conditions 3 NH 3 PbI 3 ) Is deposited on the upper electrically conductive layer and the upper electrode.
The samples obtained in the test groups 1 to 2 and the control group were subjected to scanning electron microscopy analysis, wherein (a) in fig. 5 is a sample diagram of the test group 1, (b) in fig. 5 is a sample diagram of the control group, and fig. 6 is a sample diagram of the test group 2. As can be seen from comparison, the contact between the perovskite layer and the nickel oxide layer in the cross-sectional views of the samples shown in the test groups 1 and 2 is good, and the contact surface between the perovskite layer and the nickel oxide layer in the cross-sectional views of the samples shown in the control group has holes, which indicates that PbI 2 The introduction of the seed layer greatly improves the wettability between the perovskite ink and the nickel oxide.
The battery performance of the experimental group 1 and the control group was tested by connecting 20 sub-batteries with a size of 20×20cm in series with each other, and testing was performed under a standard solar light with a test voltage of 20V to-0.1V and a test step length of 100mV/s. The test results are shown in table 1 and fig. 7. As can be seen in combination with table 1 and fig. 7, pbI 2 The introduction of the seed crystal layer improves the component open voltage, short circuit current, filling factor and photoelectric conversion efficiency of the perovskite battery.
Table 1 comparative plot of cell performance for experimental group 1 and control group
| Cell area/cm 2 | Component on-press/V | Short-circuit current/mA | Fill factor/% | Photoelectric conversion efficiency/% | |
| Control group | 288 | 17.79 | 267.68 | 64.01 | 10.58 |
| Experiment group 1 | 288 | 17.90 | 270.66 | 66.61 | 11.21 |
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (9)
1. A method of improving wettability between a perovskite ink and an electrical transport layer, comprising:
forming a metal halide layer with the thickness not more than 10nm on the electric transmission layer in advance, and coating perovskite ink on the metal halide layer, wherein the metal halide is a precursor material for forming the perovskite ink;
the metal halide layer further comprises:
a first dense layer formed on the electrical transport layer;
and a second dense layer formed on the first dense layer, the first dense layer having a density greater than that of the second dense layer.
2. The method of claim 1, wherein the metal halide is BX 2 B is lead element or/and tin element, X is halogen element.
3. The method of claim 1, wherein at least one of the following conditions is satisfied:
the electric transmission layer is a hole transmission layer or an electron transmission layer;
the thickness of the metal halide layer is 1-8 nm.
4. The method according to claim 1, wherein the metal halide layer is obtained by a wet preparation process or a dry preparation process, the dry preparation process being an evaporation method, a sputtering method or an atomic deposition method, and the wet preparation process being a spin coating method, a blade coating method or a slit coating method.
5. The method of claim 1, wherein the first dense layer has a thickness of 0.1 to 3nm and the second dense layer has a thickness of 0.5 to 8nm.
6. The method of claim 1, wherein the metal halide layer is formed by vapor deposition, and the first dense layer has a vapor deposition rate ofThe evaporation rate of the second compact layer is +.>
7. A method of making a perovskite battery comprising: a perovskite light absorbing layer formed on a lower electrically conductive layer using the method of any one of claims 1 to 6.
8. A perovskite battery prepared by the method of claim 7.
9. An energy storage device comprising the perovskite cell of claim 8 or a perovskite cell prepared by the method of claim 8.
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