CN112673534B - Cover member and package for encapsulation - Google Patents

Abstract

The cover member for encapsulation of the present invention is a cover member for encapsulation bonded to a packaging substrate, and includes a glass member having a joint portion provided in a plane frame shape, and a light-transmitting portion provided inside the joint portion; one or more layers The metallization layer is formed on the joint portion of the glass member in a frame shape; and one or more Au-Sn layers are disposed on the metallization layer and have a frame shape with a width of 250 μm or less.

Description

Cover member and package for packaging

technical field

The present invention relates to an encapsulation cover member and a package which are bonded to an encapsulation substrate.

This application claims priority based on Patent Application No. 2018-194535 filed in Japan on October 15, 2018 and Patent Application No. 2019-184287 filed in Japan on October 7, 2019, the contents of which are incorporated herein by reference.

Background technique

Conventionally, semiconductor devices and light-emitting devices that are sealed in a package in order to protect light-emitting elements such as semiconductor lasers (LDs) and LEDs from the outside have been known (for example, refer to Patent Documents 1 and 2).

The semiconductor device described in Patent Document 1 includes: a package substrate having a concave portion opened at an upper portion; a semiconductor element accommodated in the concave portion; a window member (a cover member for encapsulation) arranged to cover the opening of the concave portion; between widgets. The sealing structure has: a first metal layer arranged on the upper surface of the package substrate in a frame shape; a second metal layer arranged on the inner surface of the window member in a frame shape; and a metal bonding layer arranged on the first metal layer and the second metal layer. Between the two metal layers, the sealing structure is configured such that one of the first metal layer and the second metal layer is entirely located in a region where the other of the first metal layer and the second metal layer is disposed.

The light-emitting device described in Patent Document 2 includes: a mounting board; an ultraviolet light emitting element mounted on the mounting board; . The mounting board includes a support body, a first conductor portion supported by the support body, a second conductor portion, and a first metal layer for bonding. The lid includes: a lid main body having a recessed portion formed on the back surface; and a second metal layer for bonding arranged to face the first metal layer for bonding on a peripheral portion of the recessed portion. The uppermost layer farthest from the support in each of the first conductor portion, the second conductor portion, and the first metal layer for bonding is formed of Au, and the first metal layer for bonding and the second metal layer for bonding are bonded by Au—Sn.

The metal joint described in Patent Document 1 is composed of an Au—Sn alloy. In Patent Document 2, the first metal layer for bonding and the second metal layer for bonding are also bonded by an Au—Sn alloy. That is, in any of the structures of Patent Documents 1 and 2, an Au—Sn layer made of an Au—Sn alloy is formed on the lid member for encapsulation. The Au-Sn layer is formed by, for example, applying the Au-Sn paste to the above-mentioned portion and performing reflow soldering.

When the Au-Sn paste is applied to a glass plate and reflowed, the Au-Sn layer may be peeled off from the glass plate or a part of the glass plate may be peeled off, and the sealing lid member may be damaged.

Patent Document 1: Japanese Patent No. 6294417

Patent Document 2: Japanese Patent No. 6260919

SUMMARY OF THE INVENTION

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a lid member for sealing and a package which can suppress peeling of the Au—Sn layer and breakage of the lid member for sealing.

An encapsulation cover member according to an aspect of the present invention is an encapsulation cover member bonded to an encapsulation substrate, and includes a glass member having a joint portion provided in a flat frame shape, and a light-transmitting portion provided inside the joint portion. part; one or more metallized layers formed on the joint part of the glass member in a frame shape; and one or more Au-Sn layers provided on the metallized layers and having a width of 250 μm or less box shape.

The linear expansion coefficient of the Au-Sn layer is different from that of the glass member. When the Au-Sn layer is formed by reflow soldering, the shrinkage rate of the Au-Sn layer during cooling is larger than the shrinkage rate of the glass member. Thereby, the stress due to the shrinkage of the Au-Sn layer during cooling acts on the glass member, and the Au-Sn layer is peeled off from the glass member, or a part of the glass member is peeled off.

On the other hand, since the width of the Au-Sn layer is 250 μm or less, the stress with respect to the glass member due to the shrinkage of the Au-Sn layer is small, and peeling and breakage of the glass member due to the shrinkage of the Au-Sn layer can be suppressed.

As a preferable aspect of the cover member for encapsulation of the present invention, the frame shape of the one or more Au—Sn layers may have one or more corners, and the maximum width of the corners may be smaller than the The width of the frame shape at the portion other than the corner portion of the Au—Sn layer.

The maximum width of the corner portion represents the maximum dimension in the direction intersecting with the circumferential direction of the frame shape. In the said form, since the maximum width of a corner part is smaller than the width|variety of the part other than a corner part, the stress in the glass member in the said corner part can be reduced reliably.

As a preferable aspect of the lid member for sealing of the present invention, the corner portion may be chamfered.

For example, when the frame shape of the Au-Sn layer is rectangular, the two straight line parts intersect at 90° at the corners, and the maximum width of the four corners is larger than the width of the parts other than the corners. Stress caused by shrinkage tends to concentrate. On the other hand, since the corners are chamfered and the maximum width of the corners is smaller than the width of the parts other than the corners, the stress to the glass member can be further reduced.

As a preferable aspect of the cover member for encapsulation of the present invention, one or more of the Au-Sn layers may include a first Au-Sn layer and a second Au-Sn layer, and the second Au-Sn layer may be The layers are provided inside the first Au-Sn layer with a gap therebetween.

In the above-mentioned form, since the Au-Sn layer includes the first Au-Sn layer and the second Au-Sn layer, the bonding strength when the sealing lid member is bonded to the sealing substrate can be improved. In addition, the second Au-Sn layer is provided with a gap inside the first Au-Sn layer, and the width of the first Au-Sn layer and the width of the second Au-Sn layer are both 250 μm or less, so the Au-Sn layer The stress in the glass member caused by the shrinkage is small, and the peeling of the Au—Sn layer from the glass member or the breakage of the sealing cover member can be suppressed.

As a preferable aspect of the cover member for sealing of this invention, the thickness of the said glass member may be 50 micrometers or more and 3000 micrometers or less.

The width of the Au-Sn layer may be 50 μm or more.

The width of the Au-Sn layer may be 230 μm or less.

The maximum width of the corner portion may be 30 μm or more and 130 μm or less.

The glass member may be flat.

The glass member may be box-shaped.

A package according to an aspect of the present invention includes at least one or more package substrates and the lid member for encapsulation according to an aspect of the present invention, wherein the lid member for encapsulation and the encapsulation substrate are joined by a bonding layer, and The bonding layer is formed by melting and solidifying the Au—Sn layer.

In the package according to one aspect of the present invention, the package substrate and the encapsulation cover member are reliably joined, and peeling and breakage of the package substrate due to stress due to shrinkage of the Au—Sn layer can be suppressed.

In one aspect of the present invention, peeling of the Au—Sn layer formed on the glass member and breakage of the sealing lid member can be suppressed.

Description of drawings

FIG. 1 is a perspective view showing an encapsulation cover member and an encapsulation substrate constituting the package according to the first embodiment.

2 is a plan view showing a surface to be joined to a package substrate in the package cover member according to the first embodiment.

FIG. 3 is a cross-sectional view of the cover member for encapsulation taken along the line A1-A1 shown in FIG. 2 .

4 is a plan view showing a surface to be joined to a package substrate in the cover member for sealing according to the second embodiment.

5 is a plan view showing a surface to be joined to a package substrate in the package cover member according to the third embodiment.

6 is a plan view showing a surface to be joined to the package substrate in the package cover member according to the fourth embodiment.

7 is a plan view showing a surface to be joined to the package substrate in the cover member for packaging according to the fifth embodiment.

8 is a plan view showing a surface to be joined to the package substrate in the cover member for packaging according to the sixth embodiment.

9 is a cross-sectional view showing the package according to the first embodiment.

10 is a cross-sectional view showing a package according to a seventh embodiment.

11 is a plan view showing a surface bonded to a package substrate in the cover member for packaging according to the eighth embodiment.

Detailed ways

Hereinafter, each embodiment of the lid member for sealing and the package according to the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing a package substrate 2 and a package cover member 3 according to the present embodiment. FIG. 2 is a plan view of the cover member 3 for sealing. FIG. 3 is a cross-sectional view taken along the line A1-A1 in FIG. 2 of the lid member 3 for encapsulation as viewed in the arrow direction. FIG. 9 is a cross-sectional view of the package 1 in which the package substrate 2 and the package lid member 3 are bonded.

[Schematic structure of the package]

As shown in FIGS. 1 and 9 , the package 1 includes a package substrate 2 having a concave portion 21 having an upper opening, and a flat plate-shaped encapsulation cover member 3 joined to the package substrate 2 to close the concave portion 21 . Light-emitting elements (not shown) such as an LD (Laser Diode) or an LED (Light Emitting Diode) are housed in the package 1 .

[Structure of Package Substrate]

As shown in FIGS. 1 and 9 , the package substrate 2 has a concave portion 21 whose upper portion is open, and a bonding surface 22 provided around the concave portion 21 . For example, the package substrate 2 is formed in a rectangular box shape from AlN (aluminum nitride) or the like. The concave portion 21 is closed when the sealing cover member 3 is bonded to the bonding surface 22, and a space for accommodating a light-emitting element and the like is formed.

[Structure of the cover member for encapsulation]

As shown in FIGS. 1 to 3 , the cover member 3 for encapsulation includes a glass member 30 in the shape of a rectangular plate, a joint portion 33 provided in a flat frame shape, and a light-transmitting portion 34 provided inside the joint portion 33 ; metallization The layer 4 is formed on the bonding portion 33 in a frame shape; and the frame-shaped Au—Sn layer 5 is formed on the metallization layer 4 .

The joining portion 33 is also referred to as a frame line surrounding the light transmitting portion 34 including the substantially central portion of the glass member 30 . The outline and area of the light transmitting portion 34 are demarcated by the joint portion 33 . The metallization layer 4 and the Au—Sn layer 5 are also referred to as a frame line surrounding the light transmitting portion 34 . The bonding portion 33 , the metallization layer 4 and the Au—Sn layer 5 are also referred to as having a frame shape.

The glass member 30 has an upper surface 31 serving as a top surface of the package 1 , and a lower surface 32 including a bonding portion 33 bonded to the bonding surface 22 of the package substrate 2 . For example, the glass member 30 is formed into a rectangular plate shape with a side length of 2 mm to 30 mm and a thickness of 50 μm to 3000 μm using borosilicate glass, quartz glass, or the like.

As shown in FIGS. 1 to 3 , a rectangular frame-shaped metallization layer 4 made of Au, Ti, Ni, or the like is formed on the joint portion 33 of the lower surface 32 . An Au—Sn layer 5 having the same rectangular frame shape as the metallization layer 4 is formed on the metallization layer 4 .

The metallization layer 4 is larger than the concave portion 21 of the package substrate 2 , and is formed so as to surround the concave portion 21 and abut against the bonding surface 22 . The width of the Au—Sn layer 5 is the same as the width of the metallization layer 4, or narrower than the width of the metallization layer 4, and is set to be 250 μm or less.

That is, the area surrounded by the frame (frame line) of the metallization layer 4 is larger than the opening area of the upper part of the concave portion 21 of the package substrate 2 . The line width of the frame (frame line) of the Au-Sn layer 5 is the same as or narrower than the line width of the frame (frame line) of the metallization layer 4 . In this embodiment, the line width of the Au—Sn layer 5 is set to be 250 μm or less.

Specifically, as shown in FIG. 2 , in the Au—Sn layer 5 , the two sides of the rectangle intersect at 90° at the corners 51 , and the maximum width (maximum line width) L2 (Au− The distance between the intersection of the outer two sides and the intersection of the inner two sides of the outline of the Sn layer 5 , that is, the maximum dimension in the direction in which the circumferential direction of the frame shape intersects) is larger than the distance between the four corners 51 . The width (line width) L1 of the part.

However, both the width L1 and the maximum width L2 are 250 μm or less. When the width L1 and the maximum width L2 exceed 250 μm, the stress caused by the difference between the linear expansion coefficients of the Au-Sn layer 5 and the glass member increases during cooling after the reflow soldering in which the Au-Sn layer 5 is melted, resulting in Au-Sn The layer 5 is peeled from the glass member or the glass member is damaged.

In addition, the width L1 and the maximum width L2 are preferably 50 μm or more. At this time, in the package 1 in which the lid member 3 for sealing and the sealing substrate 2 are bonded together, the bonding between the lid member 3 for sealing and the sealing substrate 2 becomes firm, so that the lid member 3 for sealing does not come off from the sealing substrate 2 . .

More preferably, the width L1 of the portion (linear portion) of the Au—Sn layer 5 other than the corner portions 51 can be set to 50 μm or more and 230 μm or less, and the maximum width L2 of the four corner portions 51 can be set to 70 μm. More than 250 micrometers or less.

The height (thickness) of the Au—Sn layer 5 can be set to, for example, 1 μm or more and 100 μm or less.

The light-emitting element is accommodated in the recess 21 of the package substrate 2 described above. Next, the Au—Sn layer 5 on the lower surface 32 of the encapsulation lid member 3 is brought into contact with the bonding surface 22 of the encapsulation substrate 2 . The package substrate 2 and the package lid member 3 are reflowed (heated) in a state where the Au—Sn layer 5 is in contact with the bonding surface 22 . Thereby, the Au-Sn solder (bonding layer 6 ) in which the Au-Sn layer 5 is melted is formed. The package substrate 2 and the package lid member 3 are bonded by the Au—Sn solder (bonding layer 6 ) to form the package 1 as shown in FIG. 9 .

[Manufacturing method of lid member for encapsulation]

For example, the cover member 3 for sealing is manufactured as follows. A plurality of metallization layers 4 (for example, a plurality of metallization layers 4 (for example, 25 square frames with a length and width of 3mm are formed). Next, the Au—Sn paste is applied so as to form a rectangular frame (for example, 25 square frames with an outer shape of 3 mm in length and width) on each metallization layer 4 .

That is, a plurality of metallization layers 4 having a rectangular (square) frame shape are formed on the surface of the glass member 30 . Next, an Au—Sn layer having a rectangular (square) frame shape is formed on each metallization layer 4 . The Au-Sn layer is formed by applying the Au-Sn slurry.

The metallization layer 4 is preferably formed by Au plating. The metallization layer 4 is formed in the same rectangular frame shape as the Au—Sn layer 5 .

The Au-Sn paste for forming the Au-Sn layer 5 is, for example, a paste such that the ratio of the flux becomes 10 mass % or more and 90 mass % or less when the Au-Sn paste is 100 mass %. It is made by mixing Au-Sn alloy powder and flux. The Au—Sn alloy powder contains Sn, for example, in an amount of not less than 21% by mass and not more than 23% by mass, and the remainder is Au and unavoidable impurities. It does not specifically limit as a flux, Common flux for solders can be used. For example, RA type, RMA type, halogen-free type flux, MSN type, AS1 type, AS2 type, etc. can be used.

On the metallization layer 4 , the Au—Sn paste is applied by printing so as to be a coating film having a width of 50 μm or more and 250 μm or less and a thickness of 1 μm or more and 100 μm or less. In addition, the Au—Sn slurry can also be applied by being ejected and supplied by a dispenser or the like.

Next, the glass member 30 to which the Au—Sn paste is printed and applied is heated (reflowed). In this reflow process, the coating film of the Au—Sn paste is heated in a non-oxidizing atmosphere such as N ₂ atmosphere, for example. The heating temperature may be in the range of 280°C to 350°C, preferably in the range of 280°C to 330°C, and more preferably in the range of 280°C to 300°C. The heating time may be kept within the range of 10 seconds to 120 seconds at the heating temperature. The heating time is preferably in the range of 20 seconds to 90 seconds, and more preferably in the range of 30 seconds to 60 seconds. An example of a suitable condition is a condition of heating at 300° C. for 1 minute.

Thereby, the Au-Sn slurry is melted. The melted Au-Sn stays on the metallized layer 4 and is cooled in this state, whereby the Au-Sn layer 5 having the same width as the metallized layer 4 is formed. In addition, since the formed Au-Sn layer 5 includes the metallization layer 4, its composition is slightly different from that of the Au-Sn paste, and is composed of Sn: 19 wt % to 23 wt %, the remainder: Au and unavoidable impurities of Au-Sn alloys.

Here, the linear expansion coefficient of the Au—Sn layer 5 formed by reflow is different from the linear expansion coefficient of the glass member 30 . That is, the shrinkage rate of the Au—Sn layer 5 by cooling is larger than the shrinkage rate of the glass member. Therefore, if the stress acting on the glass member 30 due to the shrinkage of the Au-Sn layer 5 during cooling is large, the Au-Sn layer 5 may be peeled off from the glass member 30 or a part of the glass member 30 may be peeled off.

On the other hand, in the present embodiment, since the width of the Au—Sn layer 5 is 250 μm or less, the stress acting on the glass member 30 due to the shrinkage of the Au—Sn layer 5 during cooling is small. Thereby, peeling of the Au—Sn layer 5 from the glass member 30 and breakage of the glass member 30 are suppressed.

The glass member 30 in which the plurality of rectangular Au-Sn layers 5 are formed in this way is divided for each Au-Sn layer 5 to form the cover member 3 for sealing shown in FIGS. 2 to 3 . The lid member 3 for encapsulation thus produced is joined to the encapsulation substrate 2 as described above, thereby forming the encapsulation body 1 .

By using the encapsulation cover member 3 , the concave portion 21 of the encapsulation substrate 2 can be reliably sealed by the encapsulation cover member 3 , and the peeling of the encapsulation substrate 2 and the stress caused by the shrinkage of the Au—Sn layer 5 can also be suppressed. damaged.

FIG. 9 shows the package body 1 . The Au—Sn layer 5 is melted and then solidified to become the bonding layer 6 . In the package 1 , the package substrate 2 and the package lid member 3 are bonded to each other without a gap through the bonding layer 6 .

In addition, this invention is not limited to the said embodiment, Various changes can be added in the range which does not deviate from the element of this invention. Hereinafter, the second to eighth embodiments will be described, but the description of the same features as those of the first embodiment will be omitted. In addition, the width of the metallization layer and the Au-Sn layer is the line width of the frame (frame line) or frame shape.

FIG. 4 is a plan view showing the cover member 103 for sealing according to the second embodiment. In the second embodiment, the Au-Sn layer 5A is provided in place of the Au-Sn layer 5 . In the Au—Sn layer 5A, the rectangular frame-shaped corners 51A are respectively chamfered. Therefore, the maximum width L3 of the four corners 51A (the maximum dimension in the direction intersecting the circumferential direction among the corners constituting the frame of the Au—Sn layer 5A) is smaller than the width L1 of the parts other than the four corners 51A. That is, the width of any portion of the Au—Sn layer 5A is 250 μm or less.

For example, in the Au—Sn layer 5A, the width L1 of the portion (linear portion) other than the corner portion 51A is set to 50 μm or more and 250 μm or less, and the maximum width L3 of the four corner portions 51A is set to 30 μm or more and 130 μm or less. . The Au—Sn layer 5A of this shape can also be formed by the following method.

It is also possible to form the metallization layer 4 having the same shape as the Au-Sn layer 5A with chamfered corners, apply the Au-Sn paste to the same shape with the chamfered corners thereon, and perform reflow soldering. An Au-Sn layer 5A is formed. Furthermore, on the metallization layer 4 formed in the rectangular frame shape without chamfering, the Au-Sn layer may be similarly formed in the rectangular frame shape without chamfering, and then the corners 51A of the Au-Sn layer may be chamfered. An Au-Sn layer 5A is formed.

Stress tends to concentrate on the corners 51A of the Au-Sn layer 5A due to shrinkage during cooling of the Au-Sn layer 5A. In the second embodiment, the corners 51A of the Au-Sn layer 5A where the stress due to the shrinkage of the Au-Sn layer 5A is easily concentrated are chamfered, so that the stress with respect to the sealing lid member 103 can be further reduced . In addition, the maximum width L3 of the corner portion 51A in the Au-Sn layer 5A is smaller than the width L1 of the portion other than the corner portion 51A of the Au-Sn layer 5A, so that the corner portion 51A can be reliably reduced relative to the sealing cover. Stress of part 3.

FIG. 5 is a plan view showing the cover member 203 for sealing according to the third embodiment. In the third embodiment, the Au-Sn layer 5B is provided instead of the Au-Sn layer 5 . In the Au—Sn layer 5B, the four corners 51B of the rectangular frame shape are rounded inside. Therefore, the maximum width L4 of the four corners 51B is smaller than the width L1 of the parts other than the four corners 51B. That is, the width of any portion of the Au—Sn layer 5B is 250 μm or less.

For example, the width L1 of the portion (straight portion) other than the corner portion 51B of the Au—Sn layer 5B is set to 50 μm or more and 230 μm or less, and the maximum width L4 of the four corner portions 51B is set to 30 μm or more and 130 μm or less.

The Au—Sn layer 5B of this shape can also be formed by the following method. The Au-Sn layer 5B may also be formed by forming the metallization layer 4 having the same shape as the Au-Sn layer 5B, and applying the Au-Sn paste in the same shape as the Au-Sn layer and performing reflow soldering thereon. . In addition, the Au-Sn layer may be similarly formed in a rectangular frame shape without a notch on the metallization layer 4 formed in a rectangular frame shape without a notch, and then the inner side of the corner portion 51B of the Au-Sn layer may be cut into a circular shape. to form the Au-Sn layer 5B.

FIG. 6 is a plan view showing a cover member 303 for sealing according to the fourth embodiment. In the fourth embodiment, an Au-Sn layer 5C is provided instead of the Au-Sn layer 5 . In the Au-Sn layer 5C, the maximum width L5 of the two sides intersecting at the corner portion 51C is approximately half the width L1 of the portion (straight portion) of the Au-Sn layer 5C other than the corner portion 51C. Therefore, on the two sides where the corner portion 51C intersects, a region (part) whose width is approximately half of the width L1 of the straight portion is provided. In consideration of the decrease in bondability, the distance L6 of a region whose width is approximately half of the width L1 of the straight portion on one of the two sides where the corner portion 51C intersects is set within a range of 40 μm or more and 125 μm or less.

Therefore, the maximum width L5 of the four corner portions 51C of the Au-Sn layer 5C is smaller than the width L1 of the straight portion of the Au-Sn layer 5C. That is, the width of any part of the Au—Sn layer 5C is 250 μm or less.

For example, in the Au—Sn layer 5C, the width L1 of the straight portion is set to 50 μm or more and 250 μm or less, and the maximum width L5 of the four corner portions 51C is set to 30 μm or more and 130 μm or less.

FIG. 7 is a plan view showing a cover member 403 for sealing according to the fifth embodiment. In the fifth embodiment, instead of the Au-Sn layer 5, there is a frame-shaped first Au-Sn layer 5D and a frame-shaped second Au-Sn layer formed with a gap inside the first Au-Sn layer 5D. 5E. The width L1 of the first Au-Sn layer 5D and the maximum width (maximum line width) L2 in the corner portion 51, and the width L7 of the second Au-Sn layer 5E and the maximum width (maximum line width) L8 in the corner portion 51E It is set to 250 micrometers or less.

The first Au-Sn layer 5D is the same as the Au-Sn layer 5 of the first embodiment. In the second Au—Sn layer 5E, the width L7 of the straight portion is set to 50 μm or more and 250 μm or less, and the maximum width L8 of the four corner portions 51E is set to 70 μm or more and 250 μm or less. The distance L9 of the gap between the first Au-Sn layer 5D and the second Au-Sn layer 5E is set to be 10 μm or more and 500 μm or less.

By setting the distance L9 of the gap within the above-mentioned range, when the Au-Sn layers 5D and 5E are respectively produced, it is possible to prevent the Au-Sn layers 5D and 5E from being separated from the sealing lid member 403 due to shrinkage of the melted Au-Sn. peeling, etc. In the fifth embodiment in which the Au-Sn layers 5D and 5E are formed in a double manner, the bonding range by the Au-Sn layer can be expanded compared with the encapsulation lid members of the first to fourth embodiments, so that the encapsulation can be improved. The bonding strength when the package substrate 2 is sealed with the lid member 403 .

In each of the above-described embodiments, each Au—Sn layer is formed in a rectangular frame shape, but it is not limited to this. For example, the frame-shaped Au—Sn layer may have a triangular shape, a hexagonal shape, or a circular shape without corners.

FIG. 8 is a plan view showing a cover member 503 for sealing according to the sixth embodiment. In the sixth embodiment, the encapsulation cover member 503 has a circular glass member 3F instead of the rectangular glass member 30, and has a circular frame-shaped metallization layer instead of the rectangular frame-shaped metallization layer 4 and the Au-Sn layer 5 (not shown) and a circular frame-shaped Au—Sn layer 5F. The glass member 3F has a central light-transmitting portion 534 and a circular frame-shaped joining portion 533 surrounding the light-transmitting portion 534 . On the lower surface 32F of the glass member 3F, the Au—Sn layer 5F is formed in a circular shape having no corners at the junction 533 . The width L10 of the Au—Sn layer 5F is 250 μm or less. For example, the width L10 of the Au—Sn layer 5F is set to 50 μm or more and 250 μm or less.

FIG. 10 is a cross-sectional view showing a package 701 according to the seventh embodiment. In the package body 701 , the concave portion 731 is provided in the glass member 730 of the cover member 703 for encapsulation instead of the package substrate 702 . The cover member 703 for sealing includes a glass member 730 , a frame-shaped metallization layer 704 formed on the glass member 730 , and a frame-shaped Au—Sn layer formed on the metallization layer 704 . The encapsulation cover member 703 is joined to the flat encapsulation substrate 702 via the joint layer 706 formed by melting and solidifying the Au—Sn layer, thereby forming the encapsulation body 701 .

FIG. 11 is a plan view showing a cover member 803 for sealing according to the eighth embodiment. In the eighth embodiment, instead of the metallization layer 4 , a metallization layer 4G having arc-shaped corners is provided, and instead of the Au-Sn layer 5 , an Au-Sn layer 5G having arc-shaped corners 51G is provided. In the Au-Sn layer 5G, the entirety including the corner portion 51G is formed to have the same (constant) width L8.

Example

In the cover members for encapsulation according to Examples 1 and 2 and Comparative Example 1, Au—Sn layers of different widths were formed on the plate-shaped glass member. The lid members for sealing according to these Examples 1 and 2 and Comparative Example 1 will be described. Table 1 shows the width of the Au—Sn layer in each example.

In Examples 1, 2 and Comparative Example 1, Au plating was performed on the surface of a rectangular glass member of 20 mm×20 mm, respectively, to form metallized layers of 25 samples. The metallization layer had a rectangular frame shape with the same size as the Au—Sn layer described in Table 1, and a thickness of 0.1 μm.

On each metallization layer, Au-Sn paste was applied in the same rectangular frame shape as the metallization layer. Au-Sn slurry was obtained by mixing Au-Sn alloy powder and flux at a flux ratio of 10% by mass. The Au-Sn alloy powder (Au-22 mass % Sn alloy powder) contains 22 mass % of Sn, and the remainder is Au and unavoidable impurities. The flux used RA type.

In detail, for Example 1 and Comparative Example, in order to form the shape of the eighth embodiment shown in FIG. 11, Au- The Sn layer was applied by screen printing the Au—Sn paste on the glass member using a printing mesh mask with a thickness of 30 μm.

For Example 2, in order to form an Au—Sn layer having a package size of 3030 (length 3.0 mm×width 3.0 mm) of the size shown in Table 1 in the shape of the second embodiment shown in FIG. Using a mesh mask for printing, the Au—Sn paste was applied by screen printing on a glass member.

Then, 25 frame-shaped Au-Sn layers were formed on the glass member by reflowing the glass member coated with the Au-Sn paste. In this reflow soldering, the coating film of the Au—Sn paste was heated at 300° C. for 1 minute in an N ₂ atmosphere. In each Au-Sn layer thus formed, the width of the portion (straight portion) other than the corner portion and the maximum width of the corner portion were the values shown in Table 1, and the thickness of the Au-Sn layer was 4.7 μm.

About Example 1, 2 and Comparative Example 1, the Au-Sn layer of each 25 samples obtained in this way was observed, and the peeling from a glass member was evaluated based on the penetration rate of the inside and outside of Au-Sn layer.

(Peeling evaluation: inner and outer penetration rate of Au-Sn layer)

The Au-Sn layer formed on the metallization layer was observed from the upper surface with an optical microscope (10 times). A sample having a portion continuously peeled from the outer side of the Au-Sn layer to the inner side of the Au-Sn layer was judged to be unacceptable. The sample in which there was no peeled part was judged to be good. And, among the Au-Sn layers of 25 samples formed on the glass member, the ratio of the number of samples judged to be good was calculated, and the value is shown in the item "peeling evaluation (%)" in Table 1.

[Table 1]

The peeling evaluation of Examples 1 and 2 in which the width of the Au—Sn layer was 250 μm or less was 92% or more. In particular, in Example 2 in which the width of the corner portion was 100 μm and was equal to or smaller than that of the straight portion, the peeling evaluation was 96%, and the peeling evaluation was particularly high. On the other hand, in Comparative Example 1, since the width of the Au-Sn layer was as large as 425 μm, about half of the Au-Sn layer was peeled off, and the peeling evaluation was low at 48%.

Therefore, it was found that peeling of the Au-Sn layer can be suppressed when the width of the Au-Sn layer is 250 μm or less. In addition, it was found that when the width of the corner portion is smaller than the width of the straight portion, the peeling of the Au—Sn layer can be further suppressed.

Industrial Availability

According to the present embodiment, breakage of the glass-made sealing cover member bonded to the sealing substrate and peeling of the Au—Sn layer provided on the sealing cover member are suppressed. Therefore, the cover member and package for encapsulation of the present embodiment can be suitably applied to a semiconductor device and a light-emitting device in which a light-emitting element such as a semiconductor laser (LD) or an LED is sealed in the package.

Symbol Description

1, 701 - package body, 2, 702 - package substrate, 6, 706 - bonding layer, 21, 721, 731 - recess, 22 - bonding surface, 3, 103, 203, 303, 403, 503, 703, 803- Cap components for encapsulation, 4, 4G, 704 - Metallization layer, 5, 5A, 5B, 5C, 5F, 5G - Au-Sn layer, 51, 51A, 51B, 51C, 51E, 51G - Corner, 5D - Section A Au-Sn layer, 5E- a second Au-Sn layer, 30, 3F, 730 - glass part, 31 - upper surface, 32, 32F - lower surface, 33, 533 - junction, 34, 534 - light transmission part .

Claims (10)

1. A cover member for encapsulation, which is bonded to an encapsulation substrate, wherein the cover member for encapsulation is characterized in that: including a glass member having a joint portion provided in a plane frame shape and a light-transmitting portion provided inside the joint portion; The joint has: one or more metallization layers formed in a frame shape on the joint portion of the glass member; and One or more Au—Sn layers in the state after reflow soldering are provided on the metallization layer and have a frame shape with a width of 250 μm or less, The frame shape of the one or more Au-Sn layers has one or more corners, and the maximum width of the corners is smaller than the frame shape of the Au-Sn layer except for the corners of said width. 2 . The lid member for sealing according to claim 1 , wherein: 2 . The corners are chamfered. 3. The lid member for sealing according to claim 1 or 2, wherein The one or more Au-Sn layers have a first Au-Sn layer and a second Au-Sn layer, and the second Au-Sn layer is provided with a gap inside the first Au-Sn layer. 4. The lid member for sealing according to claim 1 or 2, wherein The thickness of the said glass member is 50 micrometers or more and 3000 micrometers or less. 5. The lid member for sealing according to claim 1 or 2, wherein The width of the Au—Sn layer is 50 μm or more. 6. The lid member for sealing according to claim 1 or 2, wherein The width of the Au—Sn layer is 230 μm or less. 7. The lid member for sealing according to claim 1 or 2, wherein The maximum width of the corner portion is 30 μm or more and 130 μm or less. 8. The lid member for sealing according to claim 1 or 2, wherein The glass member is in the shape of a flat plate. 9. The lid member for sealing according to claim 1 or 2, wherein The glass member is box-shaped. 10. A method of manufacturing a package, characterized in that: At least one or more package substrates and the package lid member according to any one of claims 1 to 9 are prepared, The Au—Sn layer of the encapsulation lid member is brought into contact with the encapsulation substrate, and the Au—Sn layer is melt-solidified, thereby bonding the encapsulation lid member and the encapsulation substrate.

Images