CN112670423A - Perovskite light emitting diode capable of emitting white light, preparation method thereof and light emitting device - Google Patents
Perovskite light emitting diode capable of emitting white light, preparation method thereof and light emitting device Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims description 174
- 239000007924 injection Substances 0.000 claims description 174
- 238000000034 method Methods 0.000 claims description 28
- PRWATGACIORDEL-UHFFFAOYSA-N 2,4,5,6-tetra(carbazol-9-yl)benzene-1,3-dicarbonitrile Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=C(C#N)C(N2C3=CC=CC=C3C3=CC=CC=C32)=C(N2C3=CC=CC=C3C3=CC=CC=C32)C(N2C3=CC=CC=C3C3=CC=CC=C32)=C1C#N PRWATGACIORDEL-UHFFFAOYSA-N 0.000 claims description 20
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 20
- 229910001887 tin oxide Inorganic materials 0.000 claims description 20
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 19
- 229960002796 polystyrene sulfonate Drugs 0.000 claims description 19
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims description 15
- 230000005525 hole transport Effects 0.000 claims description 14
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910003472 fullerene Inorganic materials 0.000 claims description 10
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 5
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 5
- -1 4-butylphenyl Chemical group 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 3
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 1
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 description 41
- 238000002207 thermal evaporation Methods 0.000 description 41
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229920000144 PEDOT:PSS Polymers 0.000 description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
本发明适用于光电技术领域，提供了一种可发白光的钙钛矿发光二极管及其制备方法和发光装置，该钙钛矿发光二极管包括透明导电衬底，所述透明导电衬底上依次设置第一传输层、钙钛矿第一发光层、第二传输层、第一中间连接层、第三传输层、钙钛矿第二发光层、第四传输层、第二中间连接层、第五传输层、钙钛矿第三发光层、第六传输层、金属电极。本发明充分地利用了钙钛矿发光的优势，不仅在发光效率上实现大幅增益，而且在稳定性上明显提高，三结发光层的灵活组合，进而实现了钙钛矿可发白光的广泛应用。
The invention is applicable to the field of optoelectronic technology, and provides a perovskite light-emitting diode capable of emitting white light, a preparation method thereof, and a light-emitting device. The perovskite light-emitting diode comprises a transparent conductive substrate, and the transparent conductive substrate is arranged in sequence on the perovskite light-emitting diode. The first transport layer, the first perovskite light-emitting layer, the second transport layer, the first intermediate connecting layer, the third transport layer, the second perovskite light-emitting layer, the fourth transport layer, the second intermediate connecting layer, the fifth Transport layer, perovskite third light-emitting layer, sixth transport layer, metal electrode. The invention makes full use of the advantages of perovskite luminescence, not only achieves a substantial gain in luminous efficiency, but also significantly improves stability, and the flexible combination of triple-junction luminescent layers, thereby realizing the wide application of perovskite emitting white light .
Description
Technical Field
The invention belongs to the technical field of photoelectricity, and particularly relates to a perovskite light-emitting diode capable of emitting white light, a preparation method of the perovskite light-emitting diode and a light-emitting device.
Background
Perovskite materials are attracted to international attention due to the advantages of low cost, easiness in preparation, adjustable band gap and the like, and the photoelectric conversion efficiency of the battery is improved from 3.8% in 2009 to 25.5% in 2020. Perovskite materials may not only be applied to solar cells, but are themselves considered to be the most potential next generation low cost Light Emitting Diode (LED) materials. Organometallic halogenated perovskites are promising luminescent materials suitable for solution-process LED applications due to their high photoluminescence quantum efficiency (PLQE), high charge mobility, and high luminescent color purity.
To date, PLQE for perovskite films has reached above 70%, but the External Quantum Efficiency (EQE) to peak device electroluminescence is still below 15%, studies on device physics indicate that, in principle, charge balance is not the limiting factor for perovskites. The working current density of the conventional unijunction perovskite light-emitting diode is high, so that the efficiency of the device is quickly attenuated, and the stability is poor. The structure of the laminated light-emitting diode is designed, so that the working current density can be obviously reduced, the stability of the device is improved, and different combined colors can be obtained by adjusting the light-emitting spectrum of each light-emitting layer. In order to improve the photoelectric conversion efficiency of the perovskite light emitting diode and the application of full spectrum display, obtain longer service life and high color purity, the perovskite/perovskite laminated light emitting diode is an ideal candidate leading the next generation full color display and solid state lighting market.
Disclosure of Invention
An object of the embodiments of the present invention is to provide a perovskite light emitting diode capable of emitting white light, which aims to solve the problems in the background art.
The embodiment of the invention is realized in such a way that a perovskite light emitting diode capable of emitting white light comprises a transparent conductive substrate, wherein a first transmission layer, a perovskite first light emitting layer, a second transmission layer, a first intermediate connection layer, a third transmission layer, a perovskite second light emitting layer, a fourth transmission layer, a second intermediate connection layer, a fifth transmission layer, a perovskite third light emitting layer, a sixth transmission layer and a metal electrode are sequentially arranged on the transparent conductive substrate;
wherein the first transport layer and the second transport layer are a first hole injection layer and a first electron injection layer, respectively, or the first transport layer and the second transport layer are a first electron injection layer and a first hole injection layer, respectively; the third transport layer and the fourth transport layer are respectively a second hole injection layer and a second electron injection layer, or the third transport layer and the fourth transport layer are respectively a second electron injection layer and a second hole injection layer; the fifth transport layer and the sixth transport layer are respectively a third hole injection layer and a third electron injection layer, or the fifth transport layer and the sixth transport layer are respectively a third electron injection layer and a third hole injection layer.
As a preferable aspect of the embodiment of the present invention, the transparent conductive substrate is any one of an indium tin oxide substrate, a fluorine-doped tin oxide substrate, and an indium zinc oxide substrate.
As another preferable aspect of the embodiment of the present invention, the first hole injection layer, the second hole injection layer, and the third hole injection layer each include a p-type semiconductor material.
As another preferable aspect of the embodiment of the present invention, the first electron injection layer, the second electron injection layer, and the third electron injection layer each include an n-type semiconductor material.
As another preferable aspect of the embodiment of the present invention, each of the first intermediate connection layer and the second intermediate connection layer includes a dense layer, a hole transport layer, and/or an electron transport layer;
wherein the dense layer comprises an n-type semiconductor material or a p-type semiconductor material; the hole transport layer and the electron transport layer respectively and independently comprise molybdenum oxide, 3, 4-ethylenedioxythiophene, at least one of polystyrene sulfonate, vanadium oxide, 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline, tin oxide, titanium oxide and tungsten oxide.
The dense layer may be prepared by a physical deposition method or a chemical deposition method. Physical deposition methods include, but are not limited to, vacuum evaporation, sputtering, ion beam deposition, pulsed laser deposition, and the like; chemical deposition methods include, but are not limited to, chemical vapor deposition, atomic layer deposition, sol-gel spin coating, and the like.
The electron and hole layers of the intermediate connection layer need to consider the requirement of energy level matching. The purpose of the design of the electron transport layer is mainly to transport carriers more efficiently to improve the luminous efficiency. The electron and cavity layers of the intermediate connecting layer can be prepared by deposition methods such as vacuum evaporation, magnetron sputtering, atomic layer deposition, chemical vapor deposition, ion beam deposition, pulsed laser deposition, spin coating, blade coating and the like.
In another preferred embodiment of the present invention, the p-type semiconductor material is at least one of nickel oxide, molybdenum oxide, copper phthalocyanine, cuprous thiocyanate, poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ], poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate, poly [ bis (4-phenyl) (4-butylphenyl) amine ], and polyvinylcarbazole.
In another preferred embodiment of the present invention, the n-type semiconductor material is at least one of titanium oxide, tin oxide, zinc oxide, fullerene, graphene, a fullerene derivative, [6,6] -phenyl-C61-methyl butyrate, and 2,4,5, 6-tetrakis (9H-carbazol-9-yl) isophthalonitrile.
The preparation method of the metal electrode can be vacuum evaporation, sputtering, atomic layer deposition, 3D printing, screen printing, ink-jet printing and the like.
Another objective of an embodiment of the present invention is to provide a method for manufacturing the above perovskite light emitting diode capable of emitting white light, which includes the following steps:
taking a transparent conductive substrate, and preparing a first hole injection layer on the transparent conductive substrate;
preparing a first perovskite light-emitting layer on the first hole injection layer;
preparing a first electron injection layer on the first perovskite light-emitting layer;
preparing a first intermediate connection layer on the first electron injection layer;
preparing a second hole injection layer on the first intermediate connection layer;
preparing a second perovskite light-emitting layer on the second hole injection layer;
preparing a second electron injection layer on the perovskite second luminescent layer;
preparing a second intermediate connection layer on the second electron injection layer;
preparing a third hole injection layer on the second intermediate connection layer;
preparing a perovskite third light-emitting layer on the third hole injection layer;
preparing a third electron injection layer on the perovskite third luminescent layer;
and preparing a metal electrode on the third electron injection layer to obtain the perovskite light-emitting diode.
Another object of an embodiment of the present invention is to provide a perovskite light emitting diode manufactured by the above manufacturing method.
Another object of the embodiments of the present invention is to provide an application of the above perovskite light emitting diode in solar power generation.
Another object of an embodiment of the present invention is to provide a light emitting device including the above perovskite light emitting diode.
Compared with the prior art, the perovskite light emitting diode capable of emitting white light provided by the embodiment of the invention has the following advantages: 1) the luminous efficiency of the perovskite light-emitting diode can be more effectively improved; 2) the function of emitting white light by the perovskite light emitting diode can be realized by fully utilizing the light emitting combination of the three-junction light emitting unit; 3) the design of the unique intermediate connection layer can conveniently realize the preparation of the luminous unit layer by a solution method. The invention fully utilizes the advantages of perovskite luminescence, not only realizes great gain on luminous efficiency, but also obviously improves the stability, and realizes the flexible combination of the three-junction luminescent layer, thereby realizing the wide application of perovskite capable of emitting white light.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite light emitting diode provided in an embodiment of the present invention.
Fig. 2 is a light emission spectrum of the perovskite light emitting diode provided in embodiment 1 of the present invention.
In the figure, 1-transparent conductive substrate, 2-first hole injection layer, 3-perovskite first light emitting layer, 4-first electron injection layer, 5-first intermediate connection layer, 6-second hole injection layer, 7-perovskite second light emitting layer, 8-second electron injection layer, 9-second intermediate connection layer, 10-third hole injection layer, 11-perovskite third light emitting layer, 12-third electron injection layer and 13-metal electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, this embodiment provides a perovskite light emitting diode capable of emitting white light, which includes a transparent conductive substrate 1, and a first hole injection layer 2, a perovskite first light emitting layer 3, a first electron injection layer 4, a first intermediate connection layer 5, a second hole injection layer 6, a perovskite second light emitting layer 7, a second electron injection layer 8, a second intermediate connection layer 9, a third hole injection layer 10, a perovskite third light emitting layer 11, a third electron injection layer 12, and a metal electrode 13 are sequentially disposed on the transparent conductive substrate 1.
Specifically, the preparation method of the perovskite light emitting diode comprises the following steps:
s1, taking an indium tin oxide substrate as a transparent conductive substrate 1, ultrasonically cleaning the transparent conductive substrate 1 by using acetone, deionized water and isopropanol solution, drying the cleaned transparent conductive substrate 1 by using dry nitrogen, and preparing a layer of poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) with the thickness of about 20nm as a first hole injection layer 2 on the dried transparent conductive substrate 1 by using a spin coating method.
S2, spin coating perovskite on the first hole injection layer 2 by spin coating method to form a layer of perovskite first light emitting layer 3 with a thickness of about 50 nm.
S3, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite first luminescent layer 3 by thermal evaporation, and then preparing a layer of fullerene with the thickness of about 20nm as the first electron injection layer 4 by thermal evaporation.
S4, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the first electron injection layer 4 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm) and polystyrene sulfonate as a hole transport layer to form the first intermediate connection layer 5.
S5, spin coating a layer of polyvinylcarbazole on the first intermediate connecting layer 5 as the second hole injection layer 6.
S6, depositing a perovskite having a thickness of about 50nm on the second hole injection layer 6 to form a perovskite second light-emitting layer 7.
S7, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite second luminescent layer 7 by thermal evaporation, and then preparing a layer of fullerene with the thickness of about 20nm as the second electron injection layer 8 by thermal evaporation.
S8, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the second electron injection layer 8 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm), polystyrene sulfonate, as a hole transport layer to form a second intermediate connection layer 9.
S9, a layer of polyvinylcarbazole is spin-coated on the second intermediate connecting layer 9 as the third hole injection layer 10.
S10, depositing a perovskite having a thickness of about 50nm on the third hole injection layer 10 to form the perovskite third light-emitting layer 11.
S11, preparing a layer of 2,4,5, 6-tetrakis (9H-carbazol-9-yl) isophthalonitrile with a thickness of about 20nm as the third electron injection layer 12 on the perovskite third light-emitting layer 11 by thermal evaporation.
S12, depositing a layer of LiF with a thickness of 1.5nm as a buffer layer on the third electron injection layer 12 by thermal evaporation, and then depositing a layer of aluminum with a thickness of 100nm as a metal electrode on the buffer layer by thermal evaporation, so as to obtain the perovskite/perovskite triple-junction stacked perovskite light emitting diode emitting white light, wherein the emission spectrum of the perovskite/perovskite triple-junction stacked perovskite light emitting diode is shown in fig. 2.
Example 2
As shown in fig. 1, this embodiment provides a perovskite light emitting diode capable of emitting white light, which includes a transparent conductive substrate 1, and a first hole injection layer 2, a perovskite first light emitting layer 3, a first electron injection layer 4, a first intermediate connection layer 5, a second hole injection layer 6, a perovskite second light emitting layer 7, a second electron injection layer 8, a second intermediate connection layer 9, a third hole injection layer 10, a perovskite third light emitting layer 11, a third electron injection layer 12, and a metal electrode 13 are sequentially disposed on the transparent conductive substrate 1.
Specifically, the preparation method of the perovskite light emitting diode comprises the following steps:
s1, taking the fluorine-doped tin oxide substrate as a transparent conductive substrate 1, ultrasonically cleaning the transparent conductive substrate 1 by using acetone, deionized water and isopropanol solution, drying the cleaned transparent conductive substrate 1 by using dry nitrogen, and preparing a layer of poly (3, 4-ethylenedioxythiophene) and polystyrene sulfonate (PEDOT: PSS) with the thickness of about 20nm as a first hole injection layer 2 on the dried transparent conductive substrate 1 by using a spin coating method.
S2, spin coating perovskite on the first hole injection layer 2 by spin coating method to form a layer of perovskite first light emitting layer 3 with a thickness of about 50 nm.
S3, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite first light-emitting layer 3, and then preparing a layer of graphene with the thickness of about 20nm as a first electron injection layer 4 by thermal evaporation.
S4, growing a layer of tin oxide with a thickness of about 30nm as a dense layer on the first electron injection layer 4 by using an atomic layer deposition method, and then spin-coating a layer of about 20nm 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline to form the first intermediate connection layer 5.
S5 spin-coating a layer of poly [ bis (4-phenyl) (4-butylphenyl) amine ] as the second hole injection layer 6 on the first intermediate bonding layer 5.
S6, depositing a perovskite having a thickness of about 50nm on the second hole injection layer 6 to form a perovskite second light-emitting layer 7.
S7, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite second luminescent layer 7 by thermal evaporation, and then preparing a layer of fullerene with the thickness of about 20nm as the second electron injection layer 8 by thermal evaporation.
S8, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the second electron injection layer 8 by using an atomic layer deposition method, then spin-coating a layer of poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate, which is about 20nm as a hole transport layer, and spin-coating a layer of titanium oxide, which is about 20nm as an electron transport layer to form a second intermediate connection layer 9.
S9 spin-coating a poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] as a third hole injection layer 10 on the second intermediate connecting layer 9.
S10, depositing a perovskite having a thickness of about 50nm on the third hole injection layer 10 to form the perovskite third light-emitting layer 11.
S11, preparing a layer of 2,4,5, 6-tetrakis (9H-carbazol-9-yl) isophthalonitrile with a thickness of about 20nm as the third electron injection layer 12 on the perovskite third light-emitting layer 11 by thermal evaporation.
S12, evaporating a layer of LiF with the thickness of 1.5nm on the third electron injection layer 12 by thermal evaporation to form a buffer layer, and evaporating a layer of aluminum with the thickness of 100nm on the buffer layer by thermal evaporation to form a metal electrode, thus obtaining the perovskite/perovskite triple-junction laminated perovskite light-emitting diode capable of emitting white light.
Example 3
As shown in fig. 1, this embodiment provides a perovskite light emitting diode capable of emitting white light, which includes a transparent conductive substrate 1, and a first hole injection layer 2, a perovskite first light emitting layer 3, a first electron injection layer 4, a first intermediate connection layer 5, a second hole injection layer 6, a perovskite second light emitting layer 7, a second electron injection layer 8, a second intermediate connection layer 9, a third hole injection layer 10, a perovskite third light emitting layer 11, a third electron injection layer 12, and a metal electrode 13 are sequentially disposed on the transparent conductive substrate 1.
Specifically, the preparation method of the perovskite light emitting diode comprises the following steps:
s1, taking the indium zinc oxide substrate as the transparent conductive substrate 1, ultrasonically cleaning the transparent conductive substrate 1 by using acetone, deionized water and isopropanol solution, drying the cleaned transparent conductive substrate 1 by using dry nitrogen, and preparing a layer of poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) with the thickness of about 20nm as the first hole injection layer 2 on the dried transparent conductive substrate 1 by using a spin coating method.
S2, spin coating perovskite on the first hole injection layer 2 by spin coating method to form a layer of perovskite first light emitting layer 3 with a thickness of about 50 nm.
S3, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite first luminescent layer 3 by thermal evaporation, and then preparing a layer of fullerene with the thickness of about 20nm as the first electron injection layer 4 by thermal evaporation.
S4, growing a layer of tin oxide with a thickness of about 30nm as a dense layer on the first electron injection layer 4 by using an atomic layer deposition method, and then spin-coating a layer of titanium oxide with a thickness of about 20nm as an electron transport layer to form the first intermediate connection layer 5.
S5, spin coating a layer of polyvinylcarbazole on the first intermediate connecting layer 5 as the second hole injection layer 6.
S6, depositing a perovskite having a thickness of about 50nm on the second hole injection layer 6 to form a perovskite second light-emitting layer 7.
S7, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite second luminescent layer 7 by thermal evaporation, and then preparing a layer of zinc oxide with the thickness of about 20nm as the second electron injection layer 8 by thermal evaporation.
S8, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the second electron injection layer 8 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm), polystyrene sulfonate, as a hole transport layer to form a second intermediate connection layer 9.
S9, spin-coating a mixture of copper phthalocyanine and cuprous thiocyanate with equal mass ratio on the second intermediate connection layer 9 as the third hole injection layer 10.
S10, depositing a perovskite having a thickness of about 50nm on the third hole injection layer 10 to form the perovskite third light-emitting layer 11.
S11, preparing a layer of 2,4,5, 6-tetrakis (9H-carbazol-9-yl) isophthalonitrile with a thickness of about 20nm as the third electron injection layer 12 on the perovskite third light-emitting layer 11 by thermal evaporation.
S12, evaporating a layer of LiF with the thickness of 1.5nm on the third electron injection layer 12 by thermal evaporation to form a buffer layer, and evaporating a layer of aluminum with the thickness of 100nm on the buffer layer by thermal evaporation to form a metal electrode, thus obtaining the perovskite/perovskite triple-junction laminated perovskite light-emitting diode capable of emitting white light.
Example 4
As shown in fig. 1, this embodiment provides a perovskite light emitting diode capable of emitting white light, which includes a transparent conductive substrate 1, and a first hole injection layer 2, a perovskite first light emitting layer 3, a first electron injection layer 4, a first intermediate connection layer 5, a second hole injection layer 6, a perovskite second light emitting layer 7, a second electron injection layer 8, a second intermediate connection layer 9, a third hole injection layer 10, a perovskite third light emitting layer 11, a third electron injection layer 12, and a metal electrode 13 are sequentially disposed on the transparent conductive substrate 1.
Specifically, the preparation method of the perovskite light emitting diode comprises the following steps:
s1, taking an indium tin oxide substrate as a transparent conductive substrate 1, ultrasonically cleaning the transparent conductive substrate 1 by using acetone, deionized water and isopropanol solution, drying the cleaned transparent conductive substrate 1 by using dry nitrogen, and preparing a layer of poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) with the thickness of about 20nm as a first hole injection layer 2 on the dried transparent conductive substrate 1 by using a spin coating method.
S2, spin coating perovskite on the first hole injection layer 2 by spin coating method to form a layer of perovskite first light emitting layer 3 with a thickness of about 50 nm.
S3, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite first luminescent layer 3 by thermal evaporation, and then preparing a layer of tin oxide with the thickness of about 20nm as the first electron injection layer 4 by thermal evaporation.
S4, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the first electron injection layer 4 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm) and polystyrene sulfonate as a hole transport layer to form the first intermediate connection layer 5.
S5, a layer of molybdenum oxide is spin-coated on the first intermediate connection layer 5 as the second hole injection layer 6.
S6, depositing a perovskite having a thickness of about 50nm on the second hole injection layer 6 to form a perovskite second light-emitting layer 7.
S7, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite second luminescent layer 7 by thermal evaporation, and then preparing a layer of titanium oxide with the thickness of about 20nm as the second electron injection layer 8 by thermal evaporation.
S8, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the second electron injection layer 8 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm), polystyrene sulfonate, as a hole transport layer to form a second intermediate connection layer 9.
S9, a layer of polyvinylcarbazole is spin-coated on the second intermediate connecting layer 9 as the third hole injection layer 10.
S10, depositing a perovskite having a thickness of about 50nm on the third hole injection layer 10 to form the perovskite third light-emitting layer 11.
S11, preparing a layer of 2,4,5, 6-tetrakis (9H-carbazol-9-yl) isophthalonitrile with a thickness of about 20nm as the third electron injection layer 12 on the perovskite third light-emitting layer 11 by thermal evaporation.
S12, evaporating a layer of LiF with the thickness of 1.5nm on the third electron injection layer 12 by thermal evaporation to form a buffer layer, and evaporating a layer of aluminum with the thickness of 100nm on the buffer layer by thermal evaporation to form a metal electrode, thus obtaining the perovskite/perovskite triple-junction laminated perovskite light-emitting diode capable of emitting white light.
Example 5
As shown in fig. 1, this embodiment provides a perovskite light emitting diode capable of emitting white light, which includes a transparent conductive substrate 1, and a first hole injection layer 2, a perovskite first light emitting layer 3, a first electron injection layer 4, a first intermediate connection layer 5, a second hole injection layer 6, a perovskite second light emitting layer 7, a second electron injection layer 8, a second intermediate connection layer 9, a third hole injection layer 10, a perovskite third light emitting layer 11, a third electron injection layer 12, and a metal electrode 13 are sequentially disposed on the transparent conductive substrate 1.
Specifically, the preparation method of the perovskite light emitting diode comprises the following steps:
s1, taking an indium tin oxide substrate as a transparent conductive substrate 1, ultrasonically cleaning the transparent conductive substrate 1 by using acetone, deionized water and isopropanol solution, drying the cleaned transparent conductive substrate 1 by using dry nitrogen, and preparing a layer of poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) with the thickness of about 20nm as a first hole injection layer 2 on the dried transparent conductive substrate 1 by using a spin coating method.
S2, spin coating perovskite on the first hole injection layer 2 by spin coating method to form a layer of perovskite first light emitting layer 3 with a thickness of about 50 nm.
S3, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite first luminescent layer 3 by thermal evaporation, and then preparing a layer of fullerene with the thickness of about 20nm as the first electron injection layer 4 by thermal evaporation.
S4, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the first electron injection layer 4 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm) and polystyrene sulfonate as a hole transport layer to form the first intermediate connection layer 5.
S5, spin coating a layer of polyvinylcarbazole on the first intermediate connecting layer 5 as the second hole injection layer 6.
S6, depositing a perovskite having a thickness of about 50nm on the second hole injection layer 6 to form a perovskite second light-emitting layer 7.
S7, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the perovskite second luminescent layer 7 by thermal evaporation, and then preparing a layer of fullerene with the thickness of about 20nm as the second electron injection layer 8 by thermal evaporation.
S8, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the second electron injection layer 8 by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm), polystyrene sulfonate, as a hole transport layer to form a second intermediate connection layer 9.
S9, a layer of polyvinylcarbazole is spin-coated on the second intermediate connecting layer 9 as the third hole injection layer 10.
S10, depositing a perovskite having a thickness of about 50nm on the third hole injection layer 10 to form the perovskite third light-emitting layer 11.
S11, preparing a layer of 2,4,5, 6-tetrakis (9H-carbazol-9-yl) isophthalonitrile with a thickness of about 20nm as the third electron injection layer 12 on the perovskite third light-emitting layer 11 by thermal evaporation.
S12, evaporating a layer of LiF with the thickness of 1.5nm on the third electron injection layer 12 by thermal evaporation to form a buffer layer, and evaporating a layer of aluminum with the thickness of 100nm on the buffer layer by thermal evaporation to form a metal electrode, thus obtaining the perovskite/perovskite triple-junction laminated perovskite light-emitting diode capable of emitting white light.
Example 6
The embodiment provides a perovskite light emitting diode capable of emitting white light, which comprises a transparent conductive substrate, wherein a first electron injection layer, a perovskite first light emitting layer 3, a first hole injection layer, a first intermediate connecting layer, a second electron injection layer, a perovskite second light emitting layer, a second hole injection layer, a second intermediate connecting layer, a third electron injection layer, a perovskite third light emitting layer, a third hole injection layer and a metal electrode are sequentially arranged on the transparent conductive substrate.
Specifically, the preparation method of the perovskite light emitting diode comprises the following steps:
s1, taking an indium tin oxide substrate as a transparent conductive substrate, ultrasonically cleaning the transparent conductive substrate by using acetone, deionized water and isopropanol solution, drying the transparent conductive substrate by using dry nitrogen after cleaning, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the dried transparent conductive substrate by thermal evaporation, and preparing a layer of fullerene with the thickness of about 20nm as a first electron injection layer by thermal evaporation.
S2, spin-coating the perovskite on the first electron injection layer by spin coating to form a perovskite first light emitting layer having a thickness of about 50n m.
S3, preparing a layer of poly 3, 4-ethylenedioxythiophene (poly 3, 4-ethylenedioxythiophene) with the diameter of about 20nm as a first hole injection layer on the first perovskite light-emitting layer by using a spin coating method.
S4, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the first hole injection layer by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm) and polystyrene sulfonate as a hole transport layer to form a first intermediate connection layer.
S5, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm on the first intermediate connecting layer by thermal evaporation, and preparing a layer of fullerene with the thickness of about 20nm as a second electron injection layer by thermal evaporation.
S6, depositing a perovskite having a thickness of about 50nm on the second electron injection layer to form a perovskite second light emitting layer.
And S7, spin-coating a layer of polyvinyl carbazole on the perovskite second light-emitting layer to be used as a second hole injection layer.
S8, growing a layer of tin oxide with the thickness of about 30nm as a dense layer on the second hole injection layer by using an atomic layer deposition method, and then spin-coating a layer of poly 3, 4-ethylenedioxythiophene (about 20 nm) and polystyrene sulfonate as a hole transport layer to form a second intermediate connection layer.
S9, preparing a layer of 2,4,5, 6-tetra (9H-carbazole-9-yl) isophthalonitrile with the thickness of about 20nm as a third electron injection layer on the second intermediate connection layer by utilizing thermal evaporation.
S10, depositing a perovskite having a thickness of about 50nm on the third electron injection layer to form a perovskite third light emitting layer.
And S11, spin-coating a layer of polyvinyl carbazole on the perovskite third light-emitting layer to form a third hole injection layer.
S12, evaporating a layer of LiF with the thickness of 1.5nm on the third hole injection layer by thermal evaporation to form a buffer layer, and evaporating a layer of aluminum with the thickness of 100nm on the buffer layer by thermal evaporation to form a metal electrode, thus obtaining the perovskite/perovskite triple-junction laminated perovskite light-emitting diode capable of emitting white light.
The perovskite light emitting diodes prepared in the above embodiments 1 to 6 are respectively referred to as devices 1 to 6, wherein the performance parameters of the devices 1 to 6 are shown in the following table 1.
TABLE 1
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
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