CN112635280B - Beam and dose measurement and control device and method for ion implanter - Google Patents
Beam and dose measurement and control device and method for ion implanter Download PDFInfo
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- CN112635280B CN112635280B CN202011523024.7A CN202011523024A CN112635280B CN 112635280 B CN112635280 B CN 112635280B CN 202011523024 A CN202011523024 A CN 202011523024A CN 112635280 B CN112635280 B CN 112635280B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
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Abstract
The invention discloses a beam current and dose measurement and control device and method of an ion implanter. The measurement and control device comprises a multi-channel multi-range beam current acquisition module, an SPI interface module, a waveform generation circuit, a voltage frequency conversion module, an IO interface module, a communication module and a CPU unit, wherein the voltage frequency conversion module is used for converting a beam current voltage signal generated by the multi-channel multi-range beam current acquisition module into a frequency signal; the measurement and control method can be realized based on the measurement and control device, and comprises the steps of scanning the beam current before ion implantation and carrying out certain distribution rules along the horizontal direction; during ion implantation, the rotary batch target is controlled to rotate at a constant speed, pulse counting is carried out on a frequency signal converted from a beam current signal of the dosage cup, and then the pulse number is converted into actual dosage. The invention can realize accurate collection and control of ion beam current and dosage of the rotary batch target ion implanter, so that ions are uniformly and accurately implanted into a wafer according to the set dosage.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a beam current and dose measurement and control device and method of an ion implanter.
Background
Ion implanters are one of the key devices in semiconductor processing. The main purpose of the beam and dose measurement and control of the ion implanter is to accurately collect and control the beam and dose, and to control the scanning movement of the beam and the movement of the target table in real time to uniformly and accurately implant ions on the surface of a wafer according to the set dose, which belongs to one of the key technologies of the ion implanter. In order to reduce the temperature rise of the wafer surface in the application scene of large dose injection and high productivity to the greatest extent, and simultaneously meet the injection process requirements of some special materials sensitive to temperature, peng Libo and the like, a scanning broadband ion beam implanter (CN 111199859A) is provided, and because the ion implanter is different from the traditional ion implantation method of the ion implanter, the integrated beam current is larger, the integration period is longer, and meanwhile, the scanning broadband belt is required to have a certain distribution rule (non-uniform distribution) along the horizontal direction, therefore, the beam current and dose measurement and control device and method (CN 201410457041.3) of the ion implanter originally proposed by Zhong Xinhua and the like are not applicable, and new beam current and dose measurement and control device and method of the ion implanter need to be developed.
Disclosure of Invention
The invention aims to provide a beam current and dose measurement and control device and method for an ion implanter, which can accurately and effectively collect and control the beam current and dose of ions, and realize uniform and accurate implantation of ions into a wafer.
The invention is realized by the following technology:
the beam and dose measuring and controlling device of the ion implanter comprises a multi-channel multi-range beam acquisition module, an SPI interface module, a waveform generating circuit, a voltage frequency conversion module, an IO interface module, a communication module and a CPU unit. The multi-channel multi-range beam current acquisition module can convert beam current signals of the Faraday cup into voltage signals; the SPI interface module is used for realizing communication between the CPU unit and the waveform generation circuit and between the CPU unit and the multi-channel multi-range beam acquisition module; a waveform generation circuit for generating a scan waveform; the voltage frequency conversion module is used for converting the beam voltage signals generated by the multi-channel multi-range beam current acquisition module into frequency signals; the communication module is used for realizing the communication between the device and the outside; the IO interface module is used for realizing the output of an internal signal and the input of an external signal;
the IO interface module has a multi-path differential digital signal reading function; the communication module adopts one or more communication modes of Ethernet communication, ethercat communication and serial port communication, and can realize communication with three or more peripheral devices; the voltage frequency conversion module adopts an AD7741BRZ chip to perform voltage frequency conversion; the main controller of the CPU unit adopts STM32H7 series chips of an intentional semiconductor or i.MX RT series chips of NXP semiconductor company;
the method for measuring and controlling beam current and dosage of ion implanter includes forming scanning wide belt by controlling output scanning waveform of waveform generator before ion implantation, detecting horizontal beam direction distribution of scanning wide belt, realizing certain distribution rule (non-uniformity distribution) of beam current along horizontal direction, and comprises the following specific steps: 1. outputting an original scanning waveform by controlling the waveform generator; 2. collecting beam distribution data of the scanning wide belt in the horizontal direction through a multi-channel multi-range beam collection module, judging whether the beam distribution meets the requirement, and if so, continuing to execute if the flow is ended and does not meet the requirement; 3. correcting the scanning waveform according to the distribution of the beam current in the horizontal direction, and outputting a new scanning waveform; 4. collecting beam distribution data of the scanning wide belt in the horizontal direction through a multi-channel multi-range beam collection module; 5. and (3) judging whether the beam distribution meets the requirements, if not, continuing to execute the steps (3) and (4) until the beam distribution meets the requirements, and ending the flow. During ion implantation, the rotary batch target rotates at a constant speed, pulse count is carried out on the frequency signal converted from the beam current signal of the dose cup, and then the pulse count is converted into actual dose.
The method is realized based on the beam current and dose measurement and control device of the ion implanter; the distribution rule of the target beam current in the horizontal direction is R 1 /R 2 = I 1 / I 2 R1 and I1 are respectively the distance from the horizontal position to the center of the rotary target disk and the beam density at the R1 position, and R2 and I2 are respectively the distance from the horizontal position to the center of the rotary target disk and the beam density at the R2 position; pulse counting is carried out when the beam window is close to the beam current in the injection process, and the pulse counting time is less than 30% of the rotation period in each target disc rotation period; the conversion formula of the injection dosage value in the injection process is as follows: d= (Ns-t No) Do/S, where D is the current injection dose value, ns is the current accumulated number of pulses, t is the current injection time, no background number of pulses, S is the beam window area; and calculating real-time injection beam current according to the accumulated pulse beams once per one or more turns of the target disk, and monitoring the stability of the injection beam current.
Compared with the prior art, the invention has the beneficial effects that: the method can realize the detection and correction of the distribution rule of the beam horizontal direction, so that the beam current can be distributed along the distribution rule required by the horizontal direction, and meanwhile, the dose statistics of the injection device of the rotary batch target ion implanter can be realized, and the uniform and accurate injection of ions into the wafer is ensured.
Drawings
FIG. 1 is a hardware design schematic of a dose integrator;
FIG. 2 is a schematic diagram of a detection and control flow of a scanning broad beam prior to ion implantation;
FIG. 3 is a schematic view of beam current distribution in the horizontal direction of an ion implanter;
FIG. 4 is a horizontal profile of a scanned wide belt after correction of the scanned waveform;
Detailed Description
The following detailed description of the embodiments of the invention is further detailed in conjunction with the accompanying drawings, which are provided to illustrate the invention and not to limit its scope.
Ion implanter beam and dose measurement and control workflow:
1. the CPU unit (shown in figure 1) controls the target disc rotating motor through the communication module (shown in figure 1) to enable the rotating batch target (shown in figure 3) to rotate at a designated speed at a uniform speed;
2. the current beam size is acquired through a multi-channel multi-range beam acquisition module (shown in figure 1), and a CPU (shown in figure 1) switches the multi-channel multi-range beam acquisition module (shown in figure 1) to a proper range through an SPI (serial peripheral interface) communication module (shown in figure 1) according to the current beam size;
according to the schematic diagram of the detection and control flow of the scanning broad band before the ion implantation shown in fig. 2, the following steps 3 to 8 are executed;
3. the CPU controls the waveform generator (shown in figure 1) to output original scanning waveform, the scanning waveform is amplified by the voltage amplifier to form scanning voltage, and the beam current is changed into a scanning wide beam (shown in figure 3) from the punctiform beam under the action of the scanning voltage;
4. the CPU unit controls the mobile Faraday motor through the communication module (shown in figure 1), and generates a synchronous signal every time the mobile Faraday cup moves an equal distance, each synchronous signal triggers the acquisition of the beam current of the mobile Faraday cup once in real time, so as to obtain the beam current distribution in the horizontal direction of the scanning broadband beam, judge whether the beam current distribution meets the requirement, execute the step 9 to start ion implantation if the beam current distribution meets the requirement, and continuously execute the following steps if the beam current distribution does not meet the requirement;
5. collecting beam distribution data of the scanning wide belt in the horizontal direction by a multi-channel multi-range beam collection module (shown in figure 1), and judging whether the beam distribution meets the distribution rule (R) shown in figure 3 1 /R 2 = I 1 /I 2 R1 and I1 are respectively the distance from the horizontal position to the center of the rotary target disk and the beam density at the R1 position, R2 and I2 are respectively the distance from the horizontal position to the center of the rotary target disk and the beam density at the R2 position), if the ion implantation is satisfied, the ion implantation is started in the 9 th step, and if the ion implantation is not satisfied, the ion implantation is continued;
6. correcting the scanning waveform according to the distribution of the beam current in the horizontal direction, and outputting a new scanning waveform;
7. collecting beam distribution data of the scanning wide belt in the horizontal direction through a multi-channel multi-range beam collection module (shown in figure 1);
8. judging whether the beam distribution meets the requirement, if not, continuing to execute the steps 6 and 7 until the beam distribution (as shown in fig. 4, deviating from the distribution rule R 1 /R 2 = I 1 / I 2 Within 1%, the abscissa is the wafer position, and the ordinate is the beam current size), the following steps are continuously executed;
9. opening a beam gate to start ion implantation, performing pulse counting on a frequency signal converted from a dose cup beam signal by a CPU unit, converting the pulse number into actual dose, calculating a real-time implantation beam once according to the accumulated pulse beam every one or more circles of target disk (shown in figure 4), and monitoring the stability of the implantation beam, wherein if the implantation beam deviation is larger, the implantation is interrupted;
10. if the beam deviation is larger in the injection process, the injection is stopped, and if the beam is stable in the injection process, the injection is completed after the injected dose reaches the set value.
Claims (8)
1. A beam current and dose measurement and control method of an ion implanter is characterized in that:
before ion implantation, the scanning waveform generator is controlled to output scanning waveform to form a scanning wide belt, and the horizontal beam distribution of the scanning wide belt is detected to realize the non-uniform beam distribution along the horizontal direction, and the specific steps are as follows:
6.1. outputting an original scanning waveform by controlling the waveform generator;
6.2. collecting beam distribution data in the horizontal direction of a scanning wide belt through a multi-channel multi-range beam collection module, judging whether the beam distribution meets the target beam distribution rule in the horizontal direction, wherein the specific distribution rule is R1/R2=I1/I2, R1 and I1 are respectively the distance from the center of a rotating target disk in the horizontal direction and the beam density at the position R1, R2 and I2 are respectively the distance from the center of the rotating target disk in the horizontal direction and the beam density at the position R2, if the beam distribution meets the target beam distribution rule, the whole flow is ended, and if the beam distribution rule does not meet the target beam distribution rule, the steps 6.3, 6.4 and 6.5 are continuously executed;
6.3. correcting the scanning waveform according to the distribution of the beam current in the horizontal direction, and outputting a new scanning waveform;
6.4. collecting beam distribution data of the scanning wide belt in the horizontal direction through a multi-channel multi-range beam collection module;
6.5. judging whether the beam current distribution is within 1% of the deviation distribution rule R1/R2=I1/I2, if not, continuing to execute the steps 6.3 and 6.4 until the beam current distribution is within 1% of the deviation distribution rule R1/R2=I1/I2, and ending the flow;
during ion implantation, the rotary batch target rotates at a constant speed, pulse count is carried out on the frequency signal converted from the beam current signal of the dose cup, and then the pulse count is converted into actual dose.
2. The method of claim 1, wherein the pulse counting is performed during the injection as the beam window is closer to the beam current, and wherein the pulse counting time is less than 30% of the rotation period per target disc rotation period.
3. The method of claim 1, wherein the real-time injection beam current is calculated from the accumulated pulse beams once per one or more rotations of the target disk for monitoring the stability of the injection beam current.
4. An ion implanter beam and dose measurement and control device for implementing the ion implanter beam and dose measurement and control method of any one of claims 1-3, characterized by comprising a multi-channel multi-range beam acquisition module, an SPI interface module, a waveform generation circuit, a voltage frequency conversion module, an IO interface module, a communication module, a CPU unit, wherein the multi-channel multi-range beam acquisition module is capable of converting a faraday cup beam signal into a voltage signal; the SPI interface module is used for realizing communication between the CPU unit and the waveform generation circuit and between the CPU unit and the multi-channel multi-range beam acquisition module; a waveform generation circuit for generating a scan waveform; the voltage frequency conversion module is used for converting the beam voltage signals generated by the multi-channel multi-range beam current acquisition module into frequency signals; the communication module is used for realizing the communication between the device and the outside; and the IO interface module is used for realizing the output of the internal signals and the input of the external signals.
5. The beam current and dose measurement and control device of claim 4, wherein the IO interface module has a multi-channel differential digital signal reading function.
6. The beam current and dose measurement and control device of claim 4, wherein the communication module is configured to communicate with three or more peripheral devices by using one or more of ethernet communication, ethercat communication, and serial communication.
7. The apparatus of claim 4, wherein the voltage-to-frequency conversion module is configured to perform voltage-to-frequency conversion using an AD7741BRZ chip.
8. The beam current and dose measurement and control apparatus of claim 4, wherein the main controller of the CPU unit is an STM32H7 series chip of an artificial semiconductor or an i.mxrt series chip of NXP semiconductor company.
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2020
- 2020-12-12 CN CN202011523024.7A patent/CN112635280B/en active Active
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| US4751393A (en) * | 1986-05-16 | 1988-06-14 | Varian Associates, Inc. | Dose measurement and uniformity monitoring system for ion implantation |
| US5068539A (en) * | 1989-05-15 | 1991-11-26 | Nissin Electric Company, Limited | Ion implantation apparatus |
| JPH07169432A (en) * | 1993-12-15 | 1995-07-04 | Nissin Electric Co Ltd | Ion implanting device |
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