CN112616236A - Double-antenna enhanced linear microwave plasma source - Google Patents
Double-antenna enhanced linear microwave plasma source Download PDFInfo
- Publication number
- CN112616236A CN112616236A CN202110032841.0A CN202110032841A CN112616236A CN 112616236 A CN112616236 A CN 112616236A CN 202110032841 A CN202110032841 A CN 202110032841A CN 112616236 A CN112616236 A CN 112616236A
- Authority
- CN
- China
- Prior art keywords
- microwave
- air inlet
- antenna
- plasma source
- inlet pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a double-antenna enhanced linear microwave plasma source, which comprises a shielding case, a carrier plate, a microwave power supply and a T-shaped power distributor communicated with the microwave power supply, wherein the carrier plate is arranged on the shielding case; the shielding cover is in a trapezoidal structure and is not provided with a bottom plate; the carrier plate is arranged right below the shielding cover; the other two ends of the T-shaped power distributor are respectively communicated with a microwave antenna, and the two microwave antennas are positioned on the same side; the T-shaped power distributor and the microwave antenna are arranged in the middle of the inner cavity of the shielding case; the shielding cover is also provided with a magnet assembly and an air inlet pipe assembly. The invention effectively increases the transverse area of the plasma generated by the linear microwave plasma source by introducing the double-antenna structure and correspondingly improving the air inlet pipeline and the magnetic field structure on the basis of the existing linear microwave plasma source, thereby finally achieving the purpose of reducing the number of microwave power sources.
Description
Technical Field
The invention relates to the field of plasma generating devices, in particular to a double-antenna enhanced linear microwave plasma source.
Background
With the rapid development of low-temperature plasma technology in the fields of large-scale integrated circuits, solar cells, plasma display devices, diamond-like carbon and pure diamond films, etc., there is an urgent need in the industry for a plasma generation technology that can generate uniform and stable plasma with high density and large area at low pressure. Therefore, in recent years, researchers at home and abroad have proposed many new plasma sources, and among them, linear microwave plasma sources have many unique advantages: the structure is simple, and the problem of impurity pollution caused by electrode insertion does not exist; the high plasma density can be obtained by adopting microwave (2.45 GHz) excitation; because the linear structure only needs to ensure the uniformity of the plasma in the axial direction, a plurality of linear microwave plasma sources are arranged side by side to obtain large-area uniform plasma and the like. In view of the excellent characteristics of the magnetic field enhanced linear microwave plasma source, it is applied to many industrial thin film deposition apparatuses, such as a flat plate type PECVD apparatus.
In order to obtain uniform plasma distribution in a large area and meet the process requirements, 6 linear microwave plasma sources are required to be arrayed in parallel in the conventional flat-plate PECVD equipment, and each pair of linear microwave plasma sources is powered by a pair of microwave power supplies. In fact, microwave power supplies are extremely expensive, accounting for the major part of the equipment cost. With the increasing market competition in recent years, the market places higher demands on the cost and performance of equipment. Therefore, reducing the number of microwave power supplies is a significant breakthrough in reducing the cost of flat-panel PECVD equipment.
In order to reduce the number of microwave power supplies in the flat-plate PECVD equipment and reduce the equipment cost on the basis of ensuring enough process area, the improvement of the linear microwave plasma source structure is necessary.
Disclosure of Invention
The invention aims to provide a double-antenna enhanced linear microwave plasma source, which aims to solve the problems in the prior art, and can effectively increase the transverse area of plasma generated by the linear microwave plasma source by introducing a double-antenna structure and correspondingly improving an air inlet pipeline and a magnetic field structure, thereby finally achieving the purpose of reducing the number of microwave power sources.
In order to achieve the purpose, the invention provides the following scheme: the invention provides a double-antenna enhanced linear microwave plasma source, which comprises a shielding case, a carrier plate, a microwave power supply and a T-shaped power distributor communicated with the microwave power supply, wherein the carrier plate is arranged on the shielding case; the shielding cover is of a trapezoidal structure, and the shielding cover is not provided with a bottom plate; the carrier plate is arranged right below the shielding cover; the other two ends of the T-shaped power distributor are respectively communicated with a microwave antenna, and the two microwave antennas are positioned on the same side; the T-shaped power distributor and the microwave antenna are arranged in the middle of the inner cavity of the shielding case;
the shielding cover is also provided with a magnet assembly and an air inlet pipe assembly.
Preferably, the shielding case is in an isosceles trapezoid shape; is made of non-magnetic or weak magnetic stainless steel material.
The T-shaped power divider and the microwave antenna are both solid copper bars, and the radius of the solid copper bars is 3mm-5 mm.
The microwave antenna is formed by connecting a plurality of sections of copper rods, and the lengths of any two sections of copper rods are different.
The glass tube is also arranged and is of a hollow structure; each microwave antenna is arranged on the central axis of one glass tube and is not in contact with the glass tube.
Preferably, the glass tube is a quartz glass tube, and the quartz glass tube is communicated with the atmosphere, so that air in the tube circulates to play a role in cooling the antenna. The two quartz tubes are arranged side by side around the copper antenna and play a role in isolating the plasma from the microwave antenna.
The magnet assembly comprises a top magnet and two side magnets; the top magnet is fixedly arranged in the middle of the top surface of the shielding case and corresponds to the T-shaped power divider in position; the two side magnets are symmetrically arranged relative to the top magnet and are respectively and fixedly arranged on two side walls of the shielding case; the top magnet and the side magnet are equal in length to the shielding case.
Preferably, bar magnets are arranged in the magnet assembly, and the magnetic field intensity generated by the bar magnets can be controlled by the magnetization intensity and the size of the bar magnets; the material is an alloy permanent magnet material or a ferrite permanent magnet material, and the alloy permanent magnet material is preferably rubidium-nickel-cobalt-NdNiCo; the ferrite permanent magnet material is preferably Cu-Ni-Fe.
The air inlet pipe group comprises two top air inlet pipes and two bottom air inlet pipes; the top air inlet pipe is fixedly arranged on the top surface of the inner cavity of the shielding cover and is symmetrically arranged around a central axis of the top surface of the shielding cover; the bottom parts of two side walls of the inner cavity of the shielding cover are also provided with air inlet baffles; the two bottom air inlet pipes are respectively arranged below the two air inlet baffles;
the top air inlet pipe and the bottom air inlet pipe are both arranged in parallel with the microwave antenna; and the top air inlet pipe is arranged above the microwave antenna, and the bottom air inlet pipe is arranged below the microwave antenna.
A plurality of through holes are formed in the top air inlet pipe and the bottom air inlet pipe at equal intervals and used for circulating air sources.
The gas source includes, but is not limited to, an inert gas, an oxidizing gas, a reducing gas, a hydrocarbon gas, a vaporized liquid or a mixed gas.
Further, the mixed gas is argon, hydrogen, a mixed gas of hydrogen and silane or hydrocarbon gas. And the gas which is more difficult to ionize is introduced from the top gas inlet pipe, and the gas which is easy to ionize is introduced from the bottom gas inlet pipe.
The magnet assembly is made of alloy permanent magnet material or ferrite permanent magnet material.
The bottom of the support plate is also provided with a heating plate.
The invention discloses the following technical effects: the invention effectively increases the transverse area of the plasma generated by the linear microwave plasma source by introducing the double-antenna structure and correspondingly improving the air inlet pipeline and the magnetic field structure on the basis of the existing linear microwave plasma source, thereby finally achieving the purpose of reducing the number of microwave power sources.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a front view of the structure of the present invention.
FIG. 2 is a top view of the structure of the present invention.
The microwave antenna comprises a top magnet 1, a top air inlet pipe 2, a shielding cover 3, a side magnet 4, a bottom air inlet pipe 5, a glass tube 6, a 7-T-shaped power distributor, a microwave antenna 8, a heating plate 9, a carrier plate 10 and an air inlet baffle 11.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The invention provides a double-antenna enhanced linear microwave plasma source, which comprises a shielding case 3, a carrier plate 10, a microwave power supply and a T-shaped power distributor 7 communicated with the microwave power supply; the shielding cover 3 is in a trapezoidal structure, and the shielding cover 3 is not provided with a bottom plate; the carrier plate 10 is arranged right below the shielding case 3; the other two ends of the T-shaped power distributor 7 are respectively communicated with a microwave antenna 8, and the two microwave antennas 8 are positioned on the same side; the T-shaped power divider 7 and the microwave antenna 8 are arranged in the middle of the inner cavity of the shielding case 3;
the shield 3 is also provided with a magnet assembly and an air inlet pipe assembly.
The T-shaped power divider 7 and the microwave antenna 8 are both solid copper bars with the radius of 3mm-5 mm.
The microwave antenna 8 is formed by connecting a plurality of sections of copper rods, and the lengths of any two sections of copper rods are different.
A glass tube 6 is also arranged, and the glass tube 6 is of a hollow structure; each microwave antenna 8 is arranged on the central axis of one glass tube 6 and is not in contact with the glass tube 6.
The magnet assembly comprises a top magnet 1 and two side magnets 4; the top magnet 1 is fixedly arranged in the middle of the top surface of the shielding case 3 and corresponds to the T-shaped power divider 7 in position; the two side magnets 4 are symmetrically arranged relative to the top magnet 1 and are respectively and fixedly arranged on two side walls of the shielding case 3; the top magnet 1 and the side magnets 4 are both equal in length to the shield 3.
The air inlet pipe group comprises two top air inlet pipes 2 and two bottom air inlet pipes 5; the top air inlet pipe 2 is fixedly arranged on the top surface of the inner cavity of the shielding cover 3 and is symmetrically arranged about the central axis of the top surface of the shielding cover 3; the bottom parts of two side walls of the inner cavity of the shielding cover 3 are also provided with air inlet baffles 11; the two bottom air inlet pipes 5 are respectively arranged below the two air inlet baffle plates 11;
the top air inlet pipe 2 and the bottom air inlet pipe 5 are both arranged in parallel with the microwave antenna 8; and the top air inlet pipe 2 is arranged above the microwave antenna 8, and the bottom air inlet pipe 5 is arranged below the microwave antenna 8.
A plurality of through holes are formed in the top air inlet pipe 2 and the bottom air inlet pipe 5 at equal intervals and used for circulating air sources.
The gas source includes, but is not limited to, an inert gas, an oxidizing gas, a reducing gas, a hydrocarbon gas, a vaporized liquid or a mixture of gases.
The magnet assembly is made of alloy permanent magnet material or ferrite permanent magnet material.
The bottom of the carrier plate 10 is also provided with a heating plate 9.
In an embodiment of the present invention, as shown in fig. 1, the specific implementation is as follows: the microwave energy is first directed to the microwave antennas 8, respectively, by the T-shaped power splitters 7 and is emitted into the work area through the glass tubes 6. Then, the working gas enters the vacuum chamber through the top gas inlet pipe 2 and the bottom gas inlet pipe 5, wherein the inert gas and the reducing gas enter through the top gas inlet pipe 2, and the reactive precursor gas enters through the bottom gas inlet pipe 5. Such a gas path design helps to reduce deposition of process films on the surfaces of the shield and the quartz glass tube. Under the action of the microwave electric field, plasma generated by ionization of the working gas is distributed on the outer surface of the glass tube 6 to serve as an outer conductor, a coaxial waveguide structure is formed with the microwave antenna 8 to transmit microwaves, and finally high-density plasma uniformly distributed along the surface of the glass tube 6 is generated. The sample to be processed is placed on the support plate 10, the temperature is raised to the required process temperature under the action of the heating plate 9, the sample to be processed is placed on the support plate 10 and transversely passes through the plasma area, and finally the deposition of the process film is realized.
The shielding case 3 is an isosceles trapezoid structure and can restrain the radial distribution of plasma, and the design of adopting the trapezoid shape can increase the plasma density and the plasma area below the glass tube 6 on one hand and match the position of the side magnet 4 on the other hand. The magnet assembly forms a divergent position type magnetic field, so that on one hand, the collision loss of the plasma and the inner surface of the shielding case 3 can be reduced, and the plasma density is increased; and on the other hand, the axial uniformity of the plasma can be improved.
In another embodiment of the present invention, as shown in fig. 2, circular holes with a radius of 1mm are opened on the bottom surfaces of the top inlet pipe 2 and the bottom inlet pipe 5 every 24mm for the inflow of working gas.
By introducing the T-shaped power divider, the invention can realize a double-antenna structure in a single linear microwave plasma source, thereby effectively increasing the radial area of the plasma; secondly, the air inlet efficiency can be improved by optimizing the air inlet pipeline, so that the deposition rate is improved; finally, by optimizing the trapezoidal shield, the deposition of process films on the quartz tube can be reduced over a certain length. The invention can easily increase the radial area of the plasma generated by the linear microwave plasma source, thereby reducing the number of microwave power supplies and greatly reducing the equipment cost; and the structure is simple, the upgrading cost is low, and the large-scale industrial popularization is facilitated.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, are merely for convenience of description of the present invention, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solutions of the present invention can be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are within the scope of the present invention defined by the claims.
Claims (10)
1. A dual antenna enhanced linear microwave plasma source, comprising: the microwave power supply comprises a shielding case (3), a carrier plate (10), a microwave power supply and a T-shaped power distributor (7) communicated with the microwave power supply; the shielding cover (3) is of a trapezoidal structure, and the shielding cover (3) is not provided with a bottom plate; the carrier plate (10) is arranged right below the shielding cover (3); the other two ends of the T-shaped power distributor (7) are respectively communicated with a microwave antenna (8), and the two microwave antennas (8) are positioned on the same side; the T-shaped power distributor (7) and the microwave antenna (8) are arranged in the middle of the inner cavity of the shielding case (3);
and the shielding cover (3) is also provided with a magnet assembly and an air inlet pipe assembly.
2. The dual antenna enhanced linear microwave plasma source of claim 1, wherein: the T-shaped power divider (7) and the microwave antenna (8) are both solid copper bars, and the radius is 3mm-5 mm.
3. A dual antenna enhanced linear microwave plasma source as claimed in claim 2 wherein: the microwave antenna (8) is formed by connecting a plurality of sections of copper rods, and the lengths of any two sections of copper rods are different.
4. The dual antenna enhanced linear microwave plasma source of claim 1, wherein: the glass tube (6) is also arranged, and the glass tube (6) is of a hollow structure; each microwave antenna (8) is arranged on the central axis of one glass tube (6) and is not in contact with the glass tube (6).
5. The dual antenna enhanced linear microwave plasma source of claim 1, wherein: the magnet assembly comprises a top magnet (1) and two side magnets (4); the top magnet (1) is fixedly arranged in the middle of the top surface of the shielding case (3) and corresponds to the T-shaped power divider (7) in position; the two side magnets (4) are symmetrically arranged relative to the top magnet (1) and are respectively and fixedly arranged on two side walls of the shielding case (3); the top magnet (1) and the side magnet (4) are equal in length to the shielding case (3).
6. The dual antenna enhanced linear microwave plasma source of claim 1, wherein: the air inlet pipe group comprises two top air inlet pipes (2) and two bottom air inlet pipes (5); the top air inlet pipe (2) is fixedly arranged on the top surface of the inner cavity of the shielding cover (3) and is symmetrically arranged relative to the central axis of the top surface of the shielding cover (3); the bottom parts of two side walls of the inner cavity of the shielding cover (3) are also provided with air inlet baffles (11); the two bottom air inlet pipes (5) are respectively arranged below the two air inlet baffles (11);
the top air inlet pipe (2) and the bottom air inlet pipe (5) are arranged in parallel with the microwave antenna (8); and the top air inlet pipe (2) is arranged above the microwave antenna (8), and the bottom air inlet pipe (5) is arranged below the microwave antenna (8).
7. The dual antenna enhanced linear microwave plasma source of claim 6, wherein: and the top air inlet pipe (2) and the bottom air inlet pipe (5) are equidistantly provided with a plurality of through holes for circulating air sources.
8. A dual antenna enhanced linear microwave plasma source as claimed in claim 7 wherein: the gas source includes, but is not limited to, an inert gas, an oxidizing gas, a reducing gas, a hydrocarbon gas, a vaporized liquid or a mixed gas.
9. The dual antenna enhanced linear microwave plasma source of claim 1, wherein: the magnet assembly is made of alloy permanent magnet material or ferrite permanent magnet material.
10. The dual antenna enhanced linear microwave plasma source of claim 1, wherein: the bottom of the carrier plate (10) is also provided with a heating plate (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110032841.0A CN112616236A (en) | 2021-01-12 | 2021-01-12 | Double-antenna enhanced linear microwave plasma source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110032841.0A CN112616236A (en) | 2021-01-12 | 2021-01-12 | Double-antenna enhanced linear microwave plasma source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112616236A true CN112616236A (en) | 2021-04-06 |
Family
ID=75253790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110032841.0A Pending CN112616236A (en) | 2021-01-12 | 2021-01-12 | Double-antenna enhanced linear microwave plasma source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112616236A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101578388A (en) * | 2006-11-02 | 2009-11-11 | 陶氏康宁公司 | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
| US20110041766A1 (en) * | 2009-08-21 | 2011-02-24 | Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan | Plasma source |
| CN111690913A (en) * | 2020-07-22 | 2020-09-22 | 中南大学 | Microwave shielding pipe and magnetic field enhanced flat PECVD (plasma enhanced chemical vapor deposition) equipment |
-
2021
- 2021-01-12 CN CN202110032841.0A patent/CN112616236A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101578388A (en) * | 2006-11-02 | 2009-11-11 | 陶氏康宁公司 | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
| US20110041766A1 (en) * | 2009-08-21 | 2011-02-24 | Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan | Plasma source |
| CN111690913A (en) * | 2020-07-22 | 2020-09-22 | 中南大学 | Microwave shielding pipe and magnetic field enhanced flat PECVD (plasma enhanced chemical vapor deposition) equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8955456B2 (en) | Microwave plasma reactor for manufacturing synthetic diamond material | |
| CN103695868B (en) | The linear plasma reinforced chemical vapor deposition system of long-range mirror-magnetic field fetter | |
| EP3041324B1 (en) | Microwave plasma processing device | |
| CN105088196A (en) | Large-area and high-density microwave plasma generating device | |
| CN103114278B (en) | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device | |
| CN109302791B (en) | Microwave Antenna Controlled Magnetically Enhanced Linear Plasma Source Generation System | |
| Wills et al. | A compact high-current microwave-driven ion source | |
| Sun et al. | The design of multiple plasma simulation linear device | |
| CN214125595U (en) | Double-antenna enhanced linear microwave plasma source | |
| CN101584256B (en) | Device for forming a film by deposition from a plasma | |
| CN112616236A (en) | Double-antenna enhanced linear microwave plasma source | |
| CN209676566U (en) | Magnetically enhanced linear plasma source generation device controlled by microwave antenna | |
| CN212688178U (en) | A kind of microwave shielding tube magnetic field enhanced flat PECVD equipment | |
| CN111690913B (en) | A microwave shielding tube and magnetic field enhanced flat PECVD equipment | |
| TWI646572B (en) | Method and apparatus for performing surface treatment or coating of a plasma excited by microwave energy in a resonating field of an electron cyclotron to surround a linear assembly | |
| CN105088195A (en) | Method for fast free-radical-enhanced chemical vapor deposition of thin films | |
| CN112794316A (en) | Device and method for continuously preparing vertically-oriented graphene on large scale by using plasma | |
| CN203602711U (en) | Microwave plasma chemical vapor deposition device | |
| CN207047313U (en) | Magnetic control sputtering device | |
| CN213925000U (en) | Microwave ion source assisted magnetron sputtering ion plating device | |
| CN215924405U (en) | High-purity single-walled carbon nanotube apparatus for producing | |
| CN210341060U (en) | High-uniformity magnetic field device for linear ECR source of flat plate type PECVD (plasma enhanced chemical vapor deposition) equipment | |
| JPH05182785A (en) | Microwave discharge reaction device and electrode device | |
| CN214327868U (en) | Gas distribution device and coating device | |
| JPS61284579A (en) | Plasma concentration type cvd device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20250221 Address after: 523083 No. 2, Songshan Lake Section, Dongyuan Avenue, Songshan Lake High tech Industrial Development Zone, Dongguan City, Guangdong Province Applicant after: GUANGDONG University OF SCIENCE & TECHNOLOGY Country or region after: China Address before: Yuelu District City, Hunan province 410083 Changsha Lushan Road No. 932 Applicant before: CENTRAL SOUTH University Country or region before: China |