CN112614925A - Light-emitting device and module - Google Patents
Light-emitting device and module Download PDFInfo
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- CN112614925A CN112614925A CN202011547732.4A CN202011547732A CN112614925A CN 112614925 A CN112614925 A CN 112614925A CN 202011547732 A CN202011547732 A CN 202011547732A CN 112614925 A CN112614925 A CN 112614925A
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- 239000011241 protective layer Substances 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 230000007704 transition Effects 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920006336 epoxy molding compound Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- MINPZZUPSSVGJN-UHFFFAOYSA-N 1,1,1,4,4,4-hexachlorobutane Chemical compound ClC(Cl)(Cl)CCC(Cl)(Cl)Cl MINPZZUPSSVGJN-UHFFFAOYSA-N 0.000 description 1
- 101150049492 DVR gene Proteins 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007721 mold pressing method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种发光装置及模组，发光装置包括基底、LED芯片、保护墙和保护层；所述保护墙与所述基底连接并形成凹部，所述凹部的凹面为发光面；所述LED芯片设于所述基底并位于所述凹部内；所述保护层填充在所述凹部并覆盖所述发光面、所述LED芯片，所述保护层在所述凹部外形成凸状的出光面；所述保护墙上并沿所述出光面设有凸起的挡墙；所述发光面的俯视方向的外形为多边形或由多边形相邻两条边圆角过渡结构的形状。本发明提出的发光装置及模组，通过保护层的形状来折射光线，实现增加LED芯片的发光角度的效果。
The invention discloses a light-emitting device and a module. The light-emitting device includes a base, an LED chip, a protection wall and a protection layer; the protection wall is connected with the base to form a concave portion, and the concave surface of the concave portion is a light-emitting surface; the The LED chip is arranged on the substrate and is located in the recess; the protective layer is filled in the recess and covers the light-emitting surface and the LED chip, and the protective layer forms a convex light-emitting surface outside the recess The protective wall is provided with a raised retaining wall along the light-emitting surface; the shape of the light-emitting surface in the top view direction is a polygon or a shape of a transition structure formed by two adjacent sides of a polygon. The light-emitting device and module proposed by the present invention refract light through the shape of the protective layer, thereby realizing the effect of increasing the light-emitting angle of the LED chip.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a light-emitting device and a module.
Background
The dynamic dimming technology of the LED backlight source has high contrast and excellent display effect, and is gradually a new favorite in the market of related products of LCD. Dynamic dimming requires multiple zones to control multiple light sources, which leads to a sharp increase in cost in the solution, making the terminal extremely expensive. By increasing the angle of a single backlight, the number of lamps can be reduced so that the system cost can be greatly reduced. How to increase the light emitting angle of a single light source is a problem to be solved at present.
Disclosure of Invention
In order to overcome the above-mentioned disadvantages of the prior art, an object of the present invention is to provide a light emitting device, which can increase the light emitting angle of a single light source.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a light emitting device includes a substrate, an LED chip, a protective wall, and a protective layer;
the protective wall is connected with the substrate to form a concave part, and the concave surface of the concave part is a luminous surface;
the LED chip is arranged on the substrate and positioned in the concave part;
the protective layer is filled in the concave part and covers the light emitting surface and the LED chip, and a convex light emitting surface is formed outside the concave part by the protective layer;
a convex retaining wall is arranged on the protective wall and along the light emergent surface;
the appearance of the light-emitting surface in the overlooking direction is in a shape of a polygon or a round corner transition structure formed by two adjacent sides of the polygon.
Preferably, the substrate comprises a positive metal substrate layer and a negative metal substrate layer, and the protection wall is filled around the LED chip and between the positive metal substrate layer and the negative metal substrate layer.
Preferably, the protection wall is vertically disposed on the substrate, and an outermost portion of the protection layer is elliptical.
Preferably, the elliptical shape satisfies X2/a2+Y2/b21(a > b > 0), a being 1/2 of the width of the protective layer and b being the height of the protective layer.
Preferably, the light emitting surface faces the outer edge of the protection wall and is not less than one elliptical shape, and in the two or more elliptical shapes, the values of a are different, and the values of b are the same.
Preferably, the ratio of b/a ranges from 0.4 to 0.8. Too high a ratio will have a light-gathering effect and too low a ratio will not serve the purpose of dispersing light.
Preferably, the height of the contact position between the edge of the protective layer and the protective wall is greater than or equal to the other positions of the protective wall.
Preferably, the material of the protective layer is composed of one or more of silicone resin, silicone rubber and epoxy resin, and the refractive index of the protective layer is preferably greater than 1.3.
Preferably, the protective layer further comprises filler particles made of SiO2、TiO2、ZrO2The weight ratio of the one or more components to the protective layer and the diffusion particles is 0-10%.
Preferably, the protective wall is made of a thermosetting type material or a thermoplastic type material. Specific examples thereof include PCT (polyamide resin), PPA (polyphthalamide), EMC (Epoxy Molding Compound), and SMC (Silicone Molding Compound).
The invention also comprises a module of the light-emitting device, which comprises the light-emitting device, a PCB, an IC driver, a diffusion sheet, a white light conversion layer and a brightness enhancement sheet.
Compared with the prior art, the invention has the beneficial effects that:
according to the light-emitting device and the module, the light rays are refracted through the shape of the protective layer, and the effect of increasing the light-emitting angle of the LED chip is achieved. The appearance of the overlooking direction of the light-emitting surface is a polygon or the shape of a fillet transition structure of two adjacent sides of the polygon, so that light can be refracted to emit light along the directions of the sides and the fillets of the polygon, and the light emitting of the side surface of the LED chip is increased. The convex retaining wall is used for preventing the protective layer from being dispersed, and is beneficial to forming the convex light emitting surface.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a sectional view of a light-emitting device in embodiment 1 of the invention;
fig. 2 is a plan view of a light-emitting device in embodiment 1 of the present invention;
fig. 3 is a side view of a light-emitting device in embodiment 1 of the present invention;
FIG. 4 is a top view of a module of the light emitting device of the present invention;
FIG. 5 is a cross-sectional view of a module of the light emitting device of the present invention;
FIG. 6 is a side view of the light refraction of the light emitting device of the present invention;
FIG. 7 is a schematic diagram of a top view of light refraction in a light emitting device according to the present invention;
fig. 8 is a schematic view of a top view of different shapes of the light emitting device of the present invention.
Description of reference numerals:
1-a light-emitting device, 101-an LED chip, 102-a protective wall, 103-a protective layer, 104-a positive electrode metal substrate layer, 105-a negative electrode metal substrate layer, 2-PCB, 3-IC drive, 4-a diffusion sheet, 5-a white light conversion layer and 6-a brightness enhancement film.
Detailed Description
So that the manner in which the above recited objects, features and advantages of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It should be noted that the embodiments of the present invention and features of the embodiments may be combined with each other without conflict. In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention, and the described embodiments are merely a subset of the embodiments of the present invention, rather than a complete embodiment. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Example 1:
referring to fig. 1 to 3, the present invention discloses a light emitting device 1 including a substrate, an LED chip 101, a protective wall 102, and a protective layer 103;
the number of the LED chips 101 is at least one, and the LED chips are arranged on the substrate, and the substrate comprises two positive electrode metal substrate layers 104 and two negative electrode metal substrate layers 105 which are not connected with each other;
the protection wall 102 is made of SMC material, the protection wall 102 is filled around the LED chip 101 and between the positive metal substrate layer 104 and the negative metal substrate layer 105, and is connected to the substrate to form a concave portion, and the concave surface of the concave portion is a light emitting surface;
the outline of the light-emitting surface in the overlooking direction is octagonal;
the protection layer 103 covers the light emitting surface and the LED chip 101 to form a convex light emitting surface, the protection layer 103 is made of silicone resin, the refractive index is 1.5, in this embodiment, the protection layer 103 does not contain filler particles, the outermost portion of the protection layer 103 is in an elliptical shape, and the elliptical shape satisfies X2/a2+Y2/b21(a > b > 0), a is 1/2 of the width of the protective layer 103, b is the height of the protective layer 103, in this embodiment, there are four ellipses as seen from the side, where two parallel ellipses are nearly the same, as in fig. 1 and 3, the light emitting device 1 has 4 sections as seen from the side, two parallel protective layers 103 as in fig. 1, b/a is 0.46, and two parallel convex protective layers 103 as in fig. 3, b/a is 0.57; the protective layer 103 in this embodiment is manufactured by a mold pressing method; the module of the light emitting device 1 provided by the invention is composed of the light emitting device 1 of the invention, a PCB2, an IC driver 3, a diffusion sheet 4, a white light conversion layer 5 and a brightness enhancement sheet 6 as shown in FIG. 4. In this embodiment, the arrangement of the LED devices is square (see fig. 4 a). In this embodiment, the light (fig. 7) is emitted along the sides of the octagon, and the light intensity perpendicular to the side of each side near the center is stronger than the light intensity on both sides of the side.
Example 2:
this example 2 differs from example 1 in that: in embodiment 2 of the present invention, the protection wall 102 is made of PCT material, the protection layer 103 is made of epoxy resin, the refractive index is 1.4, and the protection layer 103 in this embodiment includes filler particles, which are SiO2SiO added2The weight ratio of (A) to (B) is 5%; in the present exemplary embodiment, four ellipses are seen from the side, wherein two parallel ellipses are approximately identical, and a b/a value is present, which is 0.53; the passivation layer 103 in this embodiment is formed by dispensing. The light emitting surface of this embodiment is octagonal, and the retaining wall surrounds the light emitting surface (f of fig. 8). In this embodiment, the arrangement of the LED devices is prismatic (see fig. 4 b).
Example 3:
this example 3 differs from example 1 in that: in embodiment 3 of the present invention, the protection wall 102 is made of EMC material, the protection layer 103 is made of silicone rubber, the refractive index is 1.57, and the protection layer 103 in this embodiment contains ZrO filler particles as filler particles2Added ZrO2The weight ratio of (A) to (B) is 10%; in the present exemplary embodiment, four ellipses are seen from the side, two of the ellipses that are parallel are approximately identical, two b/a values are present, one of which is 0.4 and the other is 0.8; the protective layer 103 in this embodiment is formed by sprayingThe mold is made in a molding mode. The light emitting surface of the present embodiment exhibits a dodecagon shape (a of fig. 8). In this embodiment the LED devices are arranged prismatic, while the position of the devices is rotated 90 ° with respect to the first embodiment (see fig. 4 b).
In the above embodiments, the convex protection layer of the light emitting device is manufactured by molding, injection molding, dispensing molding, and injection molding.
In summary, compared with the prior art, the method has the following advantages:
1. according to the light-emitting device and the module, the light rays are refracted through the shape of the protective layer, and the effect of increasing the light-emitting angle of the LED chip is achieved. The appearance of the overlooking direction of the light-emitting surface is a polygon or the shape of a fillet transition structure of two adjacent sides of the polygon, so that light can be refracted to emit light along the directions of the sides and the fillets of the polygon, and the light emitting of the side surface of the LED chip is increased.
2. The convex retaining wall is used for preventing the protective layer from being dispersed, and is beneficial to forming the convex light-emitting surface.
3. The LED light-emitting device is lambertian in light intensity, is assembled under a small light mixing distance, and can present a more obvious point light source effect. The spatial distribution of the edge-modified LED light-emitting devices is beneficial to improving the uniformity of the module.
It should be noted that other contents of the light emitting device and the module disclosed in the present invention can be referred to in the prior art, and are not described herein again.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. A light-emitting device is characterized by comprising a substrate, an LED chip, a protective wall and a protective layer;
the protective wall is connected with the substrate to form a concave part, and the concave surface of the concave part is a luminous surface;
the LED chip is arranged on the substrate and positioned in the concave part;
the protective layer is filled in the concave part and covers the light emitting surface and the LED chip, and a convex light emitting surface is formed outside the concave part by the protective layer;
a convex retaining wall is arranged on the protective wall and along the light emergent surface;
the appearance of the light-emitting surface in the overlooking direction is in a shape of a polygon or a round corner transition structure formed by two adjacent sides of the polygon.
2. The light-emitting device according to claim 1, wherein the substrate includes a positive electrode metal substrate layer and a negative electrode metal substrate layer, and the protection wall is filled around the LED chip and between the positive electrode metal substrate layer and the negative electrode metal substrate layer.
3. The light-emitting device according to claim 1, wherein the protective wall is vertically provided on the substrate, and an outermost portion of the protective layer has an elliptical shape.
4. The light-emitting device according to claim 3, wherein the elliptical shape satisfies X2/a2+Y2/b21(a > b > 0), a being 1/2 of the width of the protective layer and b being the height of the protective layer.
5. The light-emitting device according to claim 4, wherein the light-emitting surface has at least one elliptical shape in a direction facing the outside of the protection wall, and the two or more elliptical shapes have different values of a and the same value of b.
6. The lighting device according to claim 4, wherein the ratio b/a is in the range of 0.4-0.8.
7. The light-emitting device according to claim 1, wherein a material of the protective layer is composed of one or more of silicone, silicone rubber, and epoxy resin.
8. The light-emitting device according to claim 7, wherein the protective layer further comprises filler particles made of SiO2、TiO2、ZrO2One or more of the above.
9. The lighting device as claimed in claim 1, wherein the protective wall is made of a thermosetting type material or a thermoplastic type material.
10. A light emitting device module comprising the light emitting device of any one of claims 1 to 9, a PCB, an IC driver, a diffusion sheet, a white light conversion layer, and a brightness enhancement sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011547732.4A CN112614925A (en) | 2020-12-24 | 2020-12-24 | Light-emitting device and module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011547732.4A CN112614925A (en) | 2020-12-24 | 2020-12-24 | Light-emitting device and module |
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| Publication Number | Publication Date |
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| CN112614925A true CN112614925A (en) | 2021-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011547732.4A Pending CN112614925A (en) | 2020-12-24 | 2020-12-24 | Light-emitting device and module |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050055229A (en) * | 2003-12-05 | 2005-06-13 | 서울반도체 주식회사 | Chip light-emitting diode |
| KR20080006181A (en) * | 2006-07-11 | 2008-01-16 | 주식회사 우리이티아이 | Dam encapsulated LED package and its manufacturing method |
| CN101369619A (en) * | 2007-08-14 | 2009-02-18 | 富士迈半导体精密工业（上海）有限公司 | Surface Mount Type Light Emitting Diode Assembly and Light Emitting Diode Backlight Module |
| CN102870243A (en) * | 2010-05-07 | 2013-01-09 | 皇家飞利浦电子股份有限公司 | LED Package with Rounded Square Lens |
| CN214378487U (en) * | 2020-12-24 | 2021-10-08 | 广东晶科电子股份有限公司 | Light-emitting device and module |
-
2020
- 2020-12-24 CN CN202011547732.4A patent/CN112614925A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050055229A (en) * | 2003-12-05 | 2005-06-13 | 서울반도체 주식회사 | Chip light-emitting diode |
| KR20080006181A (en) * | 2006-07-11 | 2008-01-16 | 주식회사 우리이티아이 | Dam encapsulated LED package and its manufacturing method |
| CN101369619A (en) * | 2007-08-14 | 2009-02-18 | 富士迈半导体精密工业（上海）有限公司 | Surface Mount Type Light Emitting Diode Assembly and Light Emitting Diode Backlight Module |
| CN102870243A (en) * | 2010-05-07 | 2013-01-09 | 皇家飞利浦电子股份有限公司 | LED Package with Rounded Square Lens |
| CN214378487U (en) * | 2020-12-24 | 2021-10-08 | 广东晶科电子股份有限公司 | Light-emitting device and module |
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