CN112601390B - Insulating layer structure of thin film sensor based on metal substrate - Google Patents
Insulating layer structure of thin film sensor based on metal substrate Download PDFInfo
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- CN112601390B CN112601390B CN202110152966.7A CN202110152966A CN112601390B CN 112601390 B CN112601390 B CN 112601390B CN 202110152966 A CN202110152966 A CN 202110152966A CN 112601390 B CN112601390 B CN 112601390B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 64
- 239000002184 metal Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 218
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 34
- 239000012790 adhesive layer Substances 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims description 71
- 239000010936 titanium Substances 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
- H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses an insulating layer structure of a thin film sensor based on a metal substrate, which comprises a metal substrate layer, an adhesive layer arranged on the metal substrate layer, an insulating layer arranged on the adhesive layer, a sensor circuit layer arranged on the insulating layer, and an insulating layer formed by depositing alumina layer by layer in different processes. According to the invention, the alumina insulating layer is rapidly manufactured by utilizing an electron beam evaporation process, and pinholes in the alumina insulating layer manufactured by utilizing the step coverage capability of an atomic layer stacking process can be covered by the alumina insulating layer, so that short circuit between a sensor circuit layer and a metal substrate is avoided; meanwhile, the thickness of the alumina insulating layer manufactured by the atomic layer stacking process is 10-500 nm, so that a large amount of time and cost are not generated; the invention has simple structure, and solves the problem that the thin film sensor based on the metal substrate is short-circuited when being used under the high-temperature environment condition on the premise of not increasing time and cost.
Description
Technical Field
The invention relates to an insulating layer structure of a thin film sensor based on a metal substrate, and belongs to the technical field of thin film sensors.
Background
Along with industrial internet and intelligent manufacturing industry upgrading, real-time monitoring of manufacturing processes has become more and more important, product quality can be improved and production efficiency can be improved through acquisition of key process parameters in the manufacturing process, problems can be found in advance, and intervention can be performed in time, so that malignant accidents are avoided. The sensor used for acquiring the data of key process parameters and the like plays a very important role, however, the traditional sensor is difficult to approach to the to-be-detected point due to large size, and even if the traditional sensor contacts the to-be-detected point through different mounting modes, the traditional sensor has great damage to the original physical field and damages the detection authenticity; meanwhile, the traditional sensor has a great hysteresis due to slow response, so that the requirement of on-site real-time monitoring is difficult to meet. The film sensor can provide higher spatial resolution and time resolution by virtue of the characteristics of small size and quick response, so that the on-site monitoring is more real and timely. However, conventional thin film sensors based on a silicon substrate are difficult to apply to high temperature, high pressure, large strain and corrosive situations due to the brittleness of the substrate material and the lack of high temperature resistance.
In order to solve the above problems, a thin film sensor based on a metal substrate has been developed, but due to the specificity of the metal substrate, the substrate needs to be polished in a conventional processing environment with low cleanliness, and then the substrate is transferred into an ultra clean room for manufacturing the sensor, so that the substrate is very easy to carry pollutants such as particles and the like to cause problems in subsequent processes. Such as: in the preparation process of electron beam evaporation (E-beam evaporation) technology of Physical Vapor Deposition (PVD), pinholes (pin holes) are easy to appear in an alumina insulating layer, so that short circuits exist between a sensor circuit layer and a metal substrate, and insulation failure is caused. And an Atomic Layer Deposition (ALD) process is used, so that the covering capability is strong, pinholes do not exist in the prepared alumina insulating layer, but the process deposition efficiency is low, and a large amount of time and cost are required for manufacturing the insulating layer with a certain thickness required for meeting the insulating capability under the high-temperature condition. Therefore, the problems of the prior art are not well solved.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides an insulating layer structure of a thin film sensor based on a metal substrate, and provides a novel alumina insulating layer structure for solving the problem of short circuit of the thin film sensor based on the metal substrate when in use under the high-temperature environment condition on the premise of not increasing time and cost.
In order to achieve the technical purpose, the invention adopts the following technical scheme: the insulating layer structure of the thin film sensor based on the metal substrate comprises a metal substrate layer, an adhesive layer arranged on the metal substrate layer, an insulating layer arranged on the adhesive layer, and a sensor circuit layer arranged on the insulating layer, wherein the insulating layer is formed by depositing aluminum oxide layer by layer in different processes.
The bonding layer is a metal titanium layer or a metal chromium layer which is deposited on the metal substrate and has the thickness of 5-50 nm.
The insulating layer is formed by depositing three layers of aluminum oxide layer by layer in a layered manner, and protective layers are arranged or not arranged on the insulating layer and the sensor circuit layer; the first layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um a deposited on the bonding layer by electron beam evaporation; the second layer of the insulating layer is a layer of alumina with the thickness of 10-500 nm deposited on the first layer through atomic layer stacking; the third layer of the insulating layer is a layer of alumina with a thickness of 0.2-5 um a deposited on the second layer by electron beam evaporation.
The protective layer comprises a first protective layer, wherein the first protective layer is a layer of alumina which is deposited on a third layer of the insulating layer through electron beam evaporation and has a thickness of 0.2-5 um a, and the first protective layer does not cover a bonding pad of the sensor circuit layer.
The protective layer also comprises a second protective layer, wherein the second protective layer is a layer of alumina deposited on the first protective layer through atomic layer stacking and has a thickness of 10-500 nm a, and the second protective layer does not cover the bonding pad of the sensor circuit layer.
The protective layer also comprises a third protective layer, the third protective layer is a layer of alumina which is deposited on the second protective layer through electron beam evaporation and has the thickness of 0.2-5 um a, and the third protective layer does not cover the bonding pad of the sensor circuit layer.
The insulating layer structure of the metal substrate-based film sensor is prepared by the following steps:
Step one, cleaning a metal substrate through acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
Step two, depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between the subsequent insulating layer and the metal substrate;
Step three, depositing an alumina (Al 2O3) insulating layer of 0.2-5 um on the metallic titanium (Ti) layer through an electron beam evaporation process (E-beam evaporation);
step four, depositing an alumina insulating layer of 10 to 500 nm on the alumina insulating layer deposited in the previous step through an Atomic Layer Deposition (ALD);
depositing an alumina insulating layer of 0.2-5 um on the insulating layer in the fourth step through an electron beam evaporation process;
step six, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping processes;
step seven, depositing an alumina protective layer of 0.2 to 5 um on the area except the bonding pad of the sensor circuit layer by means of a metal mask plate through an electron beam evaporation process;
Step eight, depositing an alumina protective layer of 10-500 nm on the alumina protective layer deposited in the previous step by an atomic layer stacking process by means of a metal mask, wherein a bonding pad of a sensor circuit is exposed and is not covered by the protective layer;
And step nine, depositing an alumina protective layer of 0.2-5 um on the step eight protective layer by means of a metal mask plate through an electron beam evaporation process, wherein a bonding pad of the sensor circuit is exposed and is not covered by the alumina protective layer.
The beneficial technical effects of the invention are as follows: the alumina insulating layer is rapidly manufactured by utilizing an electron beam evaporation process, and the pinhole can be covered by the alumina insulating layer prepared by the step covering capability of an atomic layer stacking process, so that short circuit can not occur between the sensor circuit layer and the metal substrate; meanwhile, the thickness of the alumina insulating layer manufactured by the atomic layer stacking process is 10-500 nm, so that a large amount of time and cost are not generated; the invention has simple structure, and solves the problem that the thin film sensor based on the metal substrate is short-circuited when being used under the high-temperature environment condition on the premise of not increasing time and cost.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the structure of embodiment 5 of the present invention;
fig. 2 is a schematic top view of embodiment 5 of the present invention.
In the figure: 1. metal base layer, 2, titanium metal layer, 3, insulating layer, 31, first layer, 32, second layer, 33, third layer, 34, first protective layer, 35, second protective layer, 36, third protective layer, 4, sensor circuit layer, 5, bonding pad.
Detailed Description
Example 1
The insulating layer structure of the thin film sensor based on the metal substrate comprises a metal substrate layer 1, an adhesive layer 2 arranged on the metal substrate layer, an insulating layer 3 arranged on the adhesive layer, and a sensor circuit layer 4 arranged on the insulating layer 3, wherein the insulating layer 3 is formed by depositing alumina layer by layer in different processes.
Example 2
As a preferred design, the adhesion layer 2 is a layer of metallic titanium deposited on a metallic substrate to a thickness of 5 to 50 nm.
The insulating layer 3 is formed by depositing three layers of aluminum oxide layer by layer in a layered manner.
The first layer 31 of the insulating layer 3 is a layer of alumina of thickness 0.2 to 5 um a deposited on the titanium metal layer by electron beam evaporation.
The second layer 32 of the insulating layer 3 is a layer of alumina deposited by atomic layer deposition on the first insulating layer 31 to a thickness of 10 to 500nm a.
The third layer 33 of the insulating layer 3 is a layer of alumina having a thickness of 0.2 to 5 um a deposited on the second insulating layer 32 by electron beam evaporation.
Example 3
As a preferred design, a protective layer may also be provided on top of the insulating layer 3. The first protective layer 34 is a layer of alumina of 0.2 to 5 um a thick deposited on the third insulating layer 33 by electron beam evaporation, and does not cover the pads 5 of the sensor circuit layer.
The first protection layer 34 is used for protecting the sensor circuit layer against damage such as scratch and abrasion from the outside, and has a certain insulating capability.
Example 4
As a preferred design for example 3, the protective layer is provided in two layers, the second protective layer 35 is a layer of alumina 10 to 500 nm a thick deposited by atomic layer deposition on the first protective layer 34, and the second protective layer does not cover the pads 5 of the sensor circuit layer.
The second protective layer 35 has the effect of covering pinholes in the first protective layer 34 so that the sensor protective layer does not short between the sensor circuit and the metal when it contacts the metal, while also increasing the mechanical strength of the whole protective layer.
Example 5
As a preferred design for example 4, the protective layer in this example is provided with three layers, as shown in fig. 1 and 2. The third protective layer 36 is a layer of alumina of a thickness of 0.2 to 5 um a deposited on the second protective layer 35 by electron beam evaporation, and the third protective layer does not cover the pads 5 of the sensor circuit layer.
The third protective layer 36 serves to further increase the insulating ability and mechanical strength of the protective layer against the harsh conditions of the outside world.
Example 6
The preparation process steps of the insulating layer structure of the thin film sensor based on the metal substrate are as follows:
Step one, cleaning a metal substrate through acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
Step two, depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between the subsequent insulating layer and the metal substrate;
Step three, depositing an alumina (Al 2O3) insulating layer of 0.2-5 um on the metallic titanium (Ti) layer through an electron beam evaporation process (E-beam evaporation);
step four, depositing an alumina insulating layer of 10 to 500 nm on the alumina insulating layer deposited in the previous step through an Atomic Layer Deposition (ALD);
depositing an alumina insulating layer of 0.2-5 um on the insulating layer in the fourth step through an electron beam evaporation process;
step six, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping processes;
Step seven, depositing an alumina protective layer of 0.2 to 5 um on the area except the sensor circuit bonding pad by means of a metal mask plate through an electron beam evaporation process;
Step eight, depositing an alumina protective layer of 10-500 nm on the alumina protective layer deposited in the previous step by an atomic layer stacking process by means of a metal mask, wherein a bonding pad of a sensor circuit is exposed and is not covered by the protective layer;
And step nine, depositing an alumina protective layer of 0.2-5 um on the step eight protective layer by means of a metal mask plate through an electron beam evaporation process, wherein a bonding pad of the sensor circuit is exposed and is not covered by the alumina protective layer.
In the above process, although pinholes (pin holes) exist in the alumina (Al 2O 3) insulating layer manufactured by the electron beam evaporation process (E-beam evaporation), the pinholes (pin holes) are covered by the alumina insulating layer manufactured by the process by means of the strong step coverage capability of the atomic layer deposition process (ALD), so that short circuits between the sensor circuit layer and the metal substrate are not ensured. At the same time, the thickness (10-500 nm) of the alumina insulating layer or protective layer manufactured by Atomic Layer Deposition (ALD) is also in the normal range, and does not generate a great deal of time and cost.
The invention does not exclude the use value of the alumina insulating layer prepared by the electron beam evaporation process due to the existence of pinholes, and even if pinholes exist in the alumina insulating layer prepared by the electron beam evaporation process, the insulation can be realized due to the coverage of the alumina prepared by the atomic layer stacking process; so that the alumina insulating layer prepared by the electron beam evaporation process plays a role in the preparation of the thin film sensor based on the metal substrate.
Solves the problems of long time and high cost required by depositing an insulating layer with enough thickness by an atomic layer stacking process in order to meet the use under the high temperature condition. The insulating layer deposited by the atomic layer stacking process is mainly used for covering pinholes in the alumina insulating layer prepared by the electron beam evaporation process, and does not need to be deposited to the same thickness as the alumina insulating layer prepared by the electron beam evaporation process.
The invention has three key innovation points: the insulating layer structure solves the problem that pinholes are easy to appear in the insulating layer by adopting the alumina deposited by electron beam evaporation alone, so that the insulating function cannot be realized. And simultaneously solves the problems of a great deal of time and cost for depositing an insulating layer with a certain thickness by simply adopting atomic layer stacking under the condition of meeting high temperature. The thickness of 10-500nm of the alumina deposited by atomic layer deposition falls within the normal range and is acceptable; the preparation environment temperature of the insulating layers is low, and the preparation of the two insulating layers is carried out in the environment below 200 ℃ without reducing the physical properties such as strength and the like of the sensor circuit and the metal substrate; the insulating layer materials in the structure are all alumina, so that the defect that the insulating performance is influenced due to the fact that cracks appear between layers of different insulating materials due to different thermal expansion coefficients is avoided.
The above embodiments are merely illustrative of the technical solutions of the present invention, but not limiting, and all simple modifications on the basis of the present invention are within the scope of the present invention.
Claims (2)
1. An insulating layer structure of a thin film sensor based on a metal substrate, which is characterized in that: the sensor comprises a metal substrate layer, an adhesive layer arranged on the metal substrate layer, an insulating layer arranged on the adhesive layer, and a sensor circuit layer arranged on the insulating layer, wherein the insulating layer is formed by depositing aluminum oxide layer by layer in different processes; the bonding layer is a metal titanium layer or a metal chromium layer which is deposited on the metal substrate and has the thickness of 5-50 nm; the insulating layer is formed by depositing three layers of aluminum oxide layer by layer in a layered manner, and protective layers are arranged or not arranged on the insulating layer and the sensor circuit layer; the first layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um a deposited on the bonding layer by electron beam evaporation; the second layer of the insulating layer is a layer of alumina with the thickness of 10-500 nm deposited on the first layer through atomic layer stacking; the third layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um a deposited on the second layer by electron beam evaporation; the protective layer comprises a first protective layer, wherein the first protective layer is a layer of alumina which is deposited on a third layer of the insulating layer through electron beam evaporation and has a thickness of 0.2-5 um a, and the first protective layer does not cover a bonding pad of the sensor circuit layer; the protective layer also comprises a second protective layer, wherein the second protective layer is a layer of alumina deposited on the first protective layer through atomic layer stacking and has a thickness of 10-500 nm a, and the second protective layer does not cover a bonding pad of the sensor circuit layer; the protective layer also comprises a third protective layer, the third protective layer is a layer of alumina which is deposited on the second protective layer through electron beam evaporation and has the thickness of 0.2-5 um, and the third protective layer does not cover the bonding pad of the sensor circuit layer.
2. The insulating layer structure of a metal base based thin film sensor according to claim 1, characterized by the preparation steps of:
Step one, cleaning a metal substrate through acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium layer on the metal substrate through a sputtering process, wherein the metal titanium layer is used for improving the adhesion between a subsequent insulating layer and the metal substrate;
step three, depositing an alumina insulating layer of 0.2 to 5 um on the metal titanium layer through an electron beam evaporation process;
Step four, depositing an alumina insulating layer of 10 to 500 nm on the alumina insulating layer deposited in the step one through an atomic layer stacking process;
depositing an alumina insulating layer of 0.2-5 um on the insulating layer in the fourth step through an electron beam evaporation process;
step six, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping processes;
step seven, depositing an alumina protective layer of 0.2 to 5 um on the area except the bonding pad of the sensor circuit layer by means of a metal mask plate through an electron beam evaporation process;
Step eight, depositing an alumina protective layer of 10-500 nm on the alumina protective layer deposited in the previous step by an atomic layer stacking process by means of a metal mask, wherein a bonding pad of a sensor circuit is exposed and is not covered by the protective layer;
And step nine, depositing an alumina protective layer of 0.2-5 um on the step eight protective layer by means of a metal mask plate through an electron beam evaporation process, wherein a bonding pad of the sensor circuit is exposed and is not covered by the alumina protective layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851300A (en) * | 1988-05-09 | 1989-07-25 | United Technologies Corporation | Precoat for improving platinum thin film adhesion |
| CN102864417A (en) * | 2012-08-22 | 2013-01-09 | 吉林大学 | Method for encapsulating organic devices by passivation layer prepared by electron beam evaporation and atomic layer deposition |
| CN104726862A (en) * | 2015-03-10 | 2015-06-24 | 电子科技大学 | Metal matrix film sensor with composite insulating layer and preparation method thereof |
| CN214046208U (en) * | 2021-02-04 | 2021-08-24 | 曹建峰 | Insulating layer structure of film sensor based on metal substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4849620B2 (en) * | 2006-12-07 | 2012-01-11 | 富士電機株式会社 | Thin film gas sensor and manufacturing method thereof |
| CN105274475A (en) * | 2015-11-27 | 2016-01-27 | 中山市厚源电子科技有限公司 | A kind of membrane sensor and preparation method thereof |
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- 2021-02-04 CN CN202110152966.7A patent/CN112601390B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851300A (en) * | 1988-05-09 | 1989-07-25 | United Technologies Corporation | Precoat for improving platinum thin film adhesion |
| CN102864417A (en) * | 2012-08-22 | 2013-01-09 | 吉林大学 | Method for encapsulating organic devices by passivation layer prepared by electron beam evaporation and atomic layer deposition |
| CN104726862A (en) * | 2015-03-10 | 2015-06-24 | 电子科技大学 | Metal matrix film sensor with composite insulating layer and preparation method thereof |
| CN214046208U (en) * | 2021-02-04 | 2021-08-24 | 曹建峰 | Insulating layer structure of film sensor based on metal substrate |
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