CN112593263A

CN112593263A - Preparation method of silver plating additive on wafer

Info

Publication number: CN112593263A
Application number: CN202011472019.8A
Authority: CN
Inventors: 涂利彬; 肖广源
Original assignee: SHANGHAI WELNEW MICRO-ELECTRONICS CO LTD
Current assignee: SHANGHAI WELNEW MICRO-ELECTRONICS CO LTD
Priority date: 2020-12-14
Filing date: 2020-12-14
Publication date: 2021-04-02

Abstract

本发明公开了一种晶圆上镀银添加剂的制备方法，该制备方法包括以下步骤：准备原料、取适量的二甲基海因，按质量比在搅拌槽中加入纯水进行搅拌；按质量比加入一定量的表面活性剂、充分搅拌；搅拌好的溶液经过滤芯进行过滤，得到低温镀银添加剂；对低温镀银添加剂成品进行封装储藏；本发明中晶圆上镀银添加剂的制备方法，该制备方法避免了镀银使用过程中分解的气体对人体伤害，达到环保要求，本添加剂使用方便，可在10‑30℃正常电镀，工艺简单，反应稳定，生产效率高，配完电镀液就可以进行电镀，本产品电镀出的制品在空气中不发生氧化，本产品电镀出的制品纯镀高、结晶细。The invention discloses a preparation method of a silver plating additive on a wafer. The preparation method comprises the following steps: preparing raw materials, taking an appropriate amount of dimethyl hydantoin, adding pure water in a stirring tank according to the mass ratio for stirring; than adding a certain amount of surfactant and fully stirring; the stirred solution is filtered through a filter element to obtain a low-temperature silver-plating additive; the finished product of the low-temperature silver-plating additive is packaged and stored; the preparation method of the silver-plating additive on a wafer in the present invention, The preparation method avoids the harm to the human body caused by the decomposed gas during the use of silver plating, and meets the requirements of environmental protection. The additive is convenient to use and can be normally electroplated at 10-30°C. The process is simple, the reaction is stable, and the production efficiency is high. Electroplating can be carried out. The products electroplated by this product will not oxidize in the air. The products electroplated by this product are highly plated and have fine crystals.

Description

Preparation method of silver plating additive on wafer

Technical Field

The invention relates to the technical field of buffer tanks, in particular to a preparation method of a silver plating additive on a wafer.

Background

The technology of the silver plating additive on the wafer is widely applied to the electroplating of the IC integrated circuit, compared with the common silver plating technology, the technology of the silver plating additive on the wafer has the characteristics of low corrosivity, simple wastewater treatment and the like, and is a green environment-friendly silver plating system which is dedicated to popularization and use by various countries in the world at present; the common silver plating technology is applied to electroplating of the connector with low precision.

At present, the common silver plating technology has corrosion phenomenon on equipment, can be decomposed into toxic gas in the production process, and has harm to the bodies of operators.

Therefore, there is a need for a method for preparing silver plating additive for wafer to solve the above-mentioned disadvantages.

Disclosure of Invention

Aiming at the defects of the prior art, the invention provides a preparation method of a silver plating additive on a wafer, which solves the problems that the existing common silver plating technology corrodes equipment, decomposes into toxic gas in the production process and damages the bodies of operators.

The invention provides the following technical scheme: a preparation method of a silver plating additive on a wafer comprises the following steps:

step one, preparing raw materials, taking a proper amount of dimethyl hydantoin, and adding pure water into a stirring tank according to a mass ratio for stirring;

secondly, adding a certain amount of surfactant according to the mass ratio, and fully stirring;

filtering the stirred solution through a filter element to obtain a low-temperature silver plating additive;

and step four, packaging and storing the finished product of the low-temperature silver-plating additive.

Preferably, the temperature of the solution in the stirring process of the second step is controlled to be 10-30 ℃, and the stirring time is 2-4 hours.

Preferably, the main component of the surfactant is polyethylene glycol.

Preferably, the filtering is carried out by using a filtering machine in the third step, and the precision of a filter element of the filtering machine is 1-10 um.

Preferably, the mass ratio of the dimethyl hydantoin to the polyethylene glycol is 10-30%: 3-5% and adding the balance of pure water according to the proportion.

Preferably, the low-temperature silver plating additive can be normally plated at 10-30 ℃.

Compared with the prior art, the invention has the following beneficial effects: the preparation method of the silver plating additive on the wafer avoids the gas decomposed in the using process of silver plating from damaging human bodies, meets the requirement of environmental protection, is convenient to use, can carry out normal electroplating at the temperature of 10-30 ℃, has simple process, stable reaction and high production efficiency, can carry out electroplating after being matched with electroplating solution, ensures that the electroplated product of the product is not oxidized in the air, and ensures that the electroplated product of the product is high in pure plating and fine in crystallization.

Detailed Description

The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

A preparation method of a silver plating additive on a wafer comprises the following steps:

The main component of the surfactant is polyethylene glycol.

And in the third step, a filter is used for filtering, and the precision of a filter element of the filter is 1-10 um.

The mass ratio of dimethyl hydantoin to polyethylene glycol is 10-30%: 3-5% and adding the balance of pure water according to the proportion.

The low-temperature silver plating additive can be used for normal electroplating at 10-30 ℃.

The preparation method of the silver plating additive on the wafer avoids the gas decomposed in the using process of silver plating from damaging human bodies, meets the requirement of environmental protection, is convenient to use, can carry out normal electroplating at the temperature of 10-30 ℃, has simple process, stable reaction and high production efficiency, can carry out electroplating after being matched with electroplating solution, ensures that the electroplated product of the product is not oxidized in the air, and ensures that the electroplated product of the product is high in pure plating and fine in crystallization.

Example 1

Weighing 100 g of dimethyl hydantoin and 30 g of polyethylene glycol, adding the dimethyl hydantoin and the polyethylene glycol into a beaker, adding 870 g of pure water according to the mass ratio, heating the solution in the beaker to 10 ℃, fully stirring the solution for 2 hours by using a stirrer, and filtering the stirred solution by using 1um filter paper to obtain 1000 g of wafer electroplating additive PhenoMet 901.

Electroplating the obtained additive, and electroplating silver on the wafer nickel-titanium-silver semi-finished product according to the following process conditions:

the product electroplated by the above process flow has good coating uniformity, and the thickness measurement data of the product is as follows: (the thickness of the middle 6 pieces of the product is measured, each piece is measured for 3 points, 18 points in total)

Example 2

Weighing 200 g of dimethyl hydantoin and 40 g of polyethylene glycol, adding the weighed materials into a beaker, adding 760 g of pure water according to the mass ratio, heating the solution in the beaker to 20 ℃, fully stirring the solution for 3 hours by using a stirrer, and filtering the stirred solution by using 5 mu m filter paper to obtain 1000 g of wafer electroplating additive PhenoMet 901.

produced according to the following process conditions: the product electroplated by the above process flow has good coating uniformity, and the thickness measurement data of the product is as follows: (the thickness of the middle 6 pieces of the product is measured, each piece is measured for 3 points, 18 points in total)

Example 3

Weighing 300 g of dimethyl hydantoin and 50 g of polyethylene glycol, adding the weighed materials into a beaker, adding 650 g of pure water according to the mass ratio, heating the solution in the beaker to 30 ℃, fully stirring the solution for 4 hours by using a stirrer, and filtering the stirred solution by using 10 mu m filter paper to obtain 1000 g of wafer electroplating additive PhenoMet 901.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. a preparation method of silver-plated additive on a wafer, is characterized in that: this preparation method comprises the following steps:

Step 1, prepare raw materials, take an appropriate amount of dimethyl hydantoin, add pure water in the stirring tank according to the mass ratio and stir;

Step 2, adding a certain amount of surfactant according to the mass ratio, fully stirring;

Step 3, the stirred solution is filtered through a filter element to obtain a low-temperature silver-plating additive;

Step 4: Encapsulate and store the finished product of the low-temperature silver plating additive.

2 . The method for preparing a silver-plated additive on a wafer according to claim 1 , wherein the temperature of the solution during the stirring process in the second step is controlled at 10-30° C., and the stirring time is 2-4 hours. 3 .

3 . The method for preparing a silver-plated additive on a wafer according to claim 1 , wherein the main component of the surfactant is polyethylene glycol. 4 .

4. The preparation method of a silver-plated additive on a wafer according to claim 1, wherein in step 3, a filter is used to filter, and the filter element precision of the filter is 1-10um.

5. The preparation method of a silver-plated additive on a wafer according to claim 1, wherein the mass ratio of the dimethyl hydantoin to polyethylene glycol is 10-30%: 3-5% , and add the remaining amount of pure water in proportion.

6 . The low-temperature silver-plating additive according to claim 1 , wherein the low-temperature silver-plating additive can be normally electroplated at 10-30° C. 7 .